BC549C, BC550C

Low Noise Transistors

NPN Silicon
Features

These are PbFree Devices*

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COLLECTOR
1

MAXIMUM RATINGS
Rating

Symbol

Collector Emitter Voltage

Value

VCEO
BC549C
BC550C

Collector Base Voltage

Vdc
30
45

VCBO
BC549C
BC550C

Emitter Base Voltage

3
EMITTER

Vdc
30
50

VEBO

5.0

Vdc

Collector Current Continuous

IC

100

Vdc

Total Device Dissipation @ TA = 25C

Derate above = 25C

PD

625
5.0

mW
mW/C

Total Device Dissipation @ TA = 25C

Derate above = 25C

PD

1.5
12

W
mW/C

TJ, Tstg

55 to +150

Characteristic

Symbol

Max

Unit

Thermal Resistance, JunctiontoAmbient

RqJA

200

C/W

Thermal Resistance, JunctiontoCase

RqJC

83.3

C/W

Operating and Storage Junction

Temperature Range

2
BASE

Unit

TO92
CASE 29
STYLE 17

12

3
STRAIGHT LEAD
BULK PACK

THERMAL CHARACTERISTICS
MARKING DIAGRAM

BC5x
yC
AYWW G
G

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

BC5xyC = Device Code

x = 4 or 5
y = 9 or 0
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
(Note: Microdot may be in either location)

ORDERING INFORMATION

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2007

March, 2007 Rev. 2

Device

Package

Shipping

BC549CG

TO92
(PbFree)

5000 Units / Bulk

BC550CG

TO92
(PbFree)

5000 Units / Bulk

Publication Order Number:

BC550C/D

BC549C, BC550C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

45

50

5.0

15
5.0

15

100
420

270
500

800

0.075
0.3
0.25

0.25
0.6
0.6

1.1

0.55

0.52
0.55
0.62

0.7

250

2.5

450

600

900

0.6

2.5
10

Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)

V(BR)CEO

Collector Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

Emitter Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

Collector Cutoff Current

(VCB = 30 V, IE = 0)
(VCB = 30 V, IE = 0, TA = +125C)

ICBO

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

Vdc
Vdc
Vdc

nAdc
mAdc
nAdc

ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)

hFE

Collector Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)

VCE(sat)

BaseEmitter Saturation Voltage

(IC = 100 mAdc, IB = 5.0 mAdc)

VBE(sat)

BaseEmitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

Vdc

Vdc
Vdc

SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

CollectorBase Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

MHz

Ccbo

SmallSignal Current Gain

(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)

pF

hfe

Noise Figure
(IC = 200 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
(IC = 200 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)

dB
NF1
NF2

1. IB is value for which IC = 11 mA at VCE = 1.0 V.

2. Pulse test = 300 ms Duty cycle = 2%.

RS

in
en

IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

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2

BC549C, BC550C
1.0
VCE = 10 V
TA = 25C

1.5

0.9

1.0
0.8
0.6
0.4

VBE(sat) @ IC/IB = 10

0.7

VBE(on) @ VCE = 10 V

0.6
0.5
0.4
0.3
0.2

0.3

VCE(sat) @ IC/IB = 10

0.1
0.2
0.2

0.5

1.0 2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mAdc)

0
0.1

100 200

Figure 2. Normalized DC Current Gain

0.2

0.5
1.0 2.0
5.0 10
20
IC, COLLECTOR CURRENT (mAdc)

50

100

Figure 3. Saturation and On Voltages

10

400
300

7.0

100
80
60

C, CAPACITANCE (pF)

200

VCE = 10 V
TA = 25C

40
30

TA = 25C

Cib

5.0

3.0
Cob
2.0

20

0.5 0.7

1.0

2.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)

1.0
0.4

50

0.6

1.0

Figure 4. CurrentGain Bandwidth Product

r b, BASE SPREADING RESISTANCE (OHMS)

f T, CURRENTGAIN  BANDWIDTH PRODUCT (MHz)

TA = 25C

0.8
V, VOLTAGE (VOLTS)

hFE, NORMALIZED DC CURRENT GAIN

2.0

2.0
4.0
10
VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitance

170
160

150
VCE = 10 V
f = 1.0 kHz
TA = 25C

140

130

120
0.1

0.2

0.5
1.0
2.0
IC, COLLECTOR CURRENT (mAdc)

5.0

Figure 6. Base Spreading Resistance

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3

10

20

40

BC549C, BC550C
PACKAGE DIMENSIONS

TO92 (TO226)
CASE 2911
ISSUE AM
A

STRAIGHT LEAD
BULK PACK

R
P
L
SEATING
PLANE

X X
G

H
V

C
SECTION XX

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

BENT LEAD
TAPE & REEL
AMMO PACK

NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.

T
SEATING
PLANE

X X
G

J
V
1

C
SECTION XX

DIM
A
B
C
D
G
J
K
N
P
R
V

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70

2.04
2.66
1.50
4.00
2.93

3.43

STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION

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BC550C/D