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SGSD100

SGSD200
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS


SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MONOLITHIC DARLINGTON
CONFIGURATION

APPLICATIONS:
GENERAL PURPOSE SWITCHING
APPLICATION
■ GENERAL PURPOSE AMPLIFIERS

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DESCRIPTION
The SGSD100 is silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration mounted in TO-218 plastic
package.
It is inteded for use in general purpose and high
current amplifier applications.
The complementary PNP type is the SGSD200.

TO-218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol

Parameter

Value
NPN

SGSD100

PNP

SGSD200

V CBO

Collector-Base Volta ge (I E = 0)

V CEO

Collector-Emitte r Voltage (I B = 0)

80

V

Collector Current

25

A

Collector Peak Current

40

A
A

IC
I CM

80

Unit

V

Base Current

6

I BM

Base Peak Current

10

A

P tot

Total Dissipation at T c ≤ 25 o C

130

W

T st g

Storage Temperature

IB

Tj

Max. Operating Junction Temperature

-65 to 150

o

C

150

o

C

For PNP types voltage and current values are negative.

September 1997

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1 2 mA mA ICEO Collecto r Cut-of f Current (I B = 0) VCE = 60 V VCE = 60 V T c = 100 o C 0. 3 Tc = 100 o C V V 1 1. duty cycle 1.8 1. 2 0.3 1.4 2. 5 mA mA ICEV Collecto r Cut-of f Current (VBE = -0. 1.6 3 V V 600 5000 8000 4000 8000 2000 2000 150 00 IB = 80 mA IB = 80 mA VBE ∗ Base-Emitter Volta ge I C = 10 A I C = 10 A VCE = 3 V VCE = 3 V hFE ∗ DC Current Gain IC IC IC IC IC IC = = = = = = 5A 5A 10 A 10 A 20 A 20 A VCE VCE VCE VCE VCE VCE Diode Forward Voltage I F IF IF IF IF IF = = = = = = 5A 5A 10 A 10 A 20 A 20 A 3 3 3 3 3 3 V V V V V V T c = 100 o C T c = 100 o C T c = 100 o C 500 T c = 100 o C T c = 100 o C 300 1.96 C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Typ.6 2. Max.2 0. Unit ICBO Collecto r Cut-of f Current (I E = 0) VCE = 80 V VCE = 80 V T c = 100 o C 0.3V) VCE = 80 V VCE = 80 V T c = 100 o C 0. 5 120 00 6000 V V V V V V 250 250 mJ mJ 6 A . 5 1.85 1.75 3.2 1.SGSD100/SGSD200 THERMAL DATA R thj-ca se Thermal Resistance Junction-case Max o 0.3 2 2. 5 1.5 % For PNP type voltage and current values are negative.8 1.3 I C = 20 A I C = 20 A = = = = = = V mA mA mA mA mA mA Base-Emitter Saturation Voltage VF ∗ 2/6 Min.5 3.95 0.6 1. 5 mA mA I EBO Emitter Cut-off Current VEB = 5 V (I C = 0) 2 mA V CEO(su s)∗ Collecto r-Emitter Sustaining Voltage V CE(sat )∗ VBE( sat) ∗ Collecto r-Emitter Saturation Voltage I C = 50 mA IC IC IC IC IC IC = = = = = = 5A 5A 10 A 10 A 20 A 20 A 80 IB IB IB IB IB IB = 20 = 20 = 40 = 40 = 80 = 80 V V V V V V Tc = 100 o C Tc = 100 o C 2.3 T c = 100 o C T c = 100 o C T c = 100 o C Es/ b Second Breakdown Energy VCC = 30 V L = 3 mH VCC = 30 V L = 3 mH I s/b Second Breakdown Current VCE = 25 V t = 500 ms ∗ Pulsed: Pulse duration = 300 µs. Tc = 100 o C 1.

SGSD100/SGSD200 Safe Operating Areas DC Current Gain (NPN type) DC Current Gain (PNP type) DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) 3/6 .

SGSD100/SGSD200 Collector-Emitter Saturation Voltage (PNP type) 4/6 .

78 0.37 0.157 0.030 F 1.051 G 10. MIN.7 15.SGSD100/SGSD200 TO-218 (SOT-93) MECHANICAL DATA mm DIM.163 31 1. inch TYP. TYP. MAX.043 0.3 0.1 0.054 D 2.578 0.480 Ø 4 4. MIN.2 0.155 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 1 2 3 P025A 5/6 .637 L3 18 L5 0.019 0.7 4.17 1. A 4.220 – 12.598 L2 – 16.437 H 14.425 0. MAX.708 3.1 0.2 – 0.193 C 1.098 E 0.046 0.15 L6 0.9 0.2 – 0.5 0.185 0.95 4.8 11.1 1.5 0.

Germany . SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.Spain .China .  1997 SGS-THOMSON Microelectronics .Switzerland .UnitedKingdom . .S.SGSD100/SGSD200 Information furnished is believed to be accurate and reliable.Malaysia .Printed in Italy .Malta .Taiwan .The Netherlands Singapore . No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Hong Kong .Sweden . 6/6 . This publication supersedes and replaces all informationpreviously supplied.U.Canada .A ..Thailand .Morocco . However.Italy .Brazil .France .Korea . Specifications mentioned in this publication are subject to change without notice. SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use.All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia .Japan .