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FEATURES
7A,650V,RDS(on)(typ)=1.1 @VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
Package information.
Example:T:TO-220;F:TO-220F.
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure
ORDERING INFORMATION
Part No.
Package
Marking
Material
Packing
SVF7N65T
TO-220-3L
SVF7N65T
Pb free
Tube
SVF7N65F
TO-220F-3L
SVF7N65F
Pb free
Tube
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2011.02.15
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SVF7N65T/F_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Ratings
Symbol
Unit
SVF7N65F
SVF7N65T
Drain-Source Voltage
VDS
650
Gate-Source Voltage
VGS
30
TC = 25C
Drain Current
7.0
ID
TC = 100C
IDM
Power Dissipation(TC=25C)
28
PD
4.0
145
46
1.16
0.37
W/C
EAS
435
mJ
TJ
-55+150
Tstg
-55+150
THERMAL CHARACTERISTICS
Characteristics
Ratings
Symbol
SVF7N65T
SVF7N65F
Unit
RJC
0.86
2.7
C/W
RJA
62.5
120
C/W
Symbol
BVDSS
Min.
Typ.
Max.
Unit
VGS=0V, ID=250A
650
--
--
IDSS
VDS=650V, VGS=0V
--
--
10
IGSS
VGS=30V, VDS=0V
--
--
100
nA
VGS(th)
2.0
--
4.0
RDS(on)
VGS=10V, ID=3.5A
--
1.1
1.4
--
917.7
--
--
98.6
--
--
1.90
--
--
29.00
--
--
48.00
--
--
39.00
--
--
33.00
--
Input Capacitance
Ciss
Output Capacitance
Coss
Crss
td(on)
tr
td(off)
Test conditions
VDS=25V,VGS=0V,
f=1.0MHZ
tf
Qg
VDS=520V, ID=7.0A,
--
15.50
--
Gate-Source Charge
Qgs
VGS=10V
--
5.40
--
Gate-Drain Charge
Qgd
--
4.50
--
(Note 2,3)
REV:1.1
pF
ns
nC
2011.02.15
Page 2 of 8
SVF7N65T/F_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Min.
Typ.
Max.
--
--
7.0
--
--
28.0
Unit
IS
ISM
VSD
IS=7.0A,VGS=0V
--
--
1.4
Trr
IS=7.0A,VGS=0V,
--
365
--
ns
Qrr
dIF/dt=100A/S(Note 2)
--
3.4
--
Integral
Reverse
Junction
Diode
in
P-N
the
MOSFET
Notes:
1.
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2011.02.15
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SVF7N65T/F_Datasheet
TYPICAL CHARACTERISTICS
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2011.02.15
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SVF7N65T/F_Datasheet
TYPICAL CHARACTERISTICS(continued)
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2011.02.15
Page 5 of 8
SVF7N65T/F_Datasheet
TYPICAL TEST CIRCUIT
50K
Qg
10V
VDS
200nF
12V
VGS
Same Type
as DUT
300nF
Qgs
Qgd
VGS
DUT
3mA
Charge
RL
VDS
VDS
90%
VGS
VDD
RG
DUT
10%
VGS
10V
td(on)
tr
ton
td(off)
tf
toff
EAS =
VDS
BVDSS
1
2
2 LIAS BVDSS - VDD
BVDSS
ID
IAS
RG
DUT
10V
ID(t)
VDD
tp
VDS(t)
VDD
Time
tp
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SVF7N65T/F_Datasheet
PACKAGE OUTLINE
TO-220-3L
UNIT: mm
TO-220F-3L
UNIT: mm
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2011.02.15
Page 7 of 8
SVF7N65T/F_Datasheet
Disclaimer:
Silan reserves the right to make changes to the information herein for the improvement of the design and
performance without further notice! Customers should obtain the latest relevant information before placing orders
and should verify that such information is complete and current.
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan
products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with
the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of
such Silan products could cause loss of body injury or damage to property.
ATTACHMENT
Revision History
Date
REV
2010.12.13
1.0
2011.02.15
1.1
Description
Original
Modify ABSOLUTE MAXIMUM RATINGS and ELECTRICAL
CHARACTERISTICS
Page
REV:1.1
2011.02.15
Page 8 of 8