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AN-9742
Device Selection Guide for Half-Bridge Welding Machine
(IGBT & Diode)
Summary
Table 1.
Welding
Machine
Output Voltage
Example
CO2
0.04IAC+15
0.04200A+15=23V
TIG
0.04IAC+10
0.04200A+10=18V
DC ARC
0.04IAC+20
0.04200A+20=28V
Table 2.
(1)
Welding Machine
Gas
CO2
CO2
MIG
He + Ar
MAG
DC-TIG
Stainless, Mild, Copper Alloy, Nickel Alloy, Titanium Alloy, Low Alloy
AC-TIG
Mixed TIG
DC-ARC
AC-ARC
Aluminum
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AN-9742
APPLICATION NOTE
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AN-9742
APPLICATION NOTE
N1 =
N1 =
(VO + VF + VI ) N1
DMAX VIN ( MIN )
(2)
(3)
Table 3.
(VO + VF = VI )
DMAX
(4)
where:
VO=output voltage;
VF=diode drop voltage; and
VI=inductor voltage drop.
Transformers primary and secondary current can be
obtained by:
I1rms =
N2
IWEL
N1
1
I 2rms = IWEL
2
(2 DMAX )
(5)
(1 + 2 DMAX )
(6)
N2
IWEL
N1
(7)
N2
VIN ( MAX ) , IWEL = I d12 + I d 2 2
N1
Features
BJT
MOSFETS
IGBT
Drive Method
Current
Voltage
Voltage
Drive Circuit
Complex
Simple
Simple
Input Impedance
Low
High
High
Drive Power
High
Low
Low
Switching Speed
Slow(s)
Fast(ns)
Middle
Operating
Frequency
Low
Fast
(less than 1MHz)
Middle
S.O.A
Narrow
Wide
Wide
Saturation
Voltage
Low
High
Low
(8)
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AN-9742
APPLICATION NOTE
70
2.0
80
60
Tc=25deg.C
50
Vge=15V
1.5
Tc=25deg.C
Tc=125deg.C
1.0
0.5
Test Condition :
Vcc=400V, Rg=10 ohm, Vge=15V
0.0
10
40
20
30
40
20
10
250
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
FGH40N60SMD
FGH40N60UFD
FGH40N60SFD
HGTG20N60A4D
70
FGH40N60SMD
FGH40N60UFD
FGH40N60SFD
HGTG20N60A4D
60
Tc=125deg.C
Vge=15V
50
200
FGH40N60SMD
FGH40N60UFD
FGH40N60SFD
HGTG20N60A4D
s
los
er
w
po
Vcc=400V, Rg=10 ohm,
tal
150 Vge=15V, Ic=40A, Tc=125deg.C To
Test Condition :
100
ing
itch
Sw
50
E
n+
Eo
[
s
los
]
off
Conduction loss
0
20.0k
40
40.0k
60.0k
80.0k
100.0k
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
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AN-9742
APPLICATION NOTE
1.0
FGH40N60SMD
FGH40N60UFD
FGH40N60SFD
HGTG20N60A4D
0.8
Tc=25deg.C
Tc=125deg.C
0.6
0.4
Test Condition :
Vcc=400V, Ic=40A, Vge=15V
0.2
5
10
15
20
25
30
Tc=25deg.C
FGH40N60UFD
12
HGTG20N60A4D
FGH40N60SFD
FGH40N60SMD
8
1.6
1.8
2.0
2.2
2.4
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AN-9742
APPLICATION NOTE
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AN-9742
APPLICATION NOTE
Qrr =
Stealth
2.2
Hyperfast2
VF [V]
Ulrafast
Hyperfast
Hyperfast2
Stealth
Stealth2
Stealth2
Hyperfast
2.0
(10)
2.8
1
I rr t rr
2
Tc=25deg.C
1.8
100
1.6
Tc=25deg.C
Tc=125deg.C
Ultrafast
1.4
80
1.2
1.0
0
20
40
60
80
Qrr [nC]
10
Ultrafast
Hyperfast
Hyperfast2
Stealth
Stealth2
Tc=125deg.C
8
6
4
IF [A]
60
40
FFA60UP30DN-Dual
20
FFA60UP30DN-single
0
0.0
0.6
1.2
1.8
-2
-4
-6
-8
-10
360
-12
-80.0n
-40.0n
0.0
40.0n
80.0n
120.0n
VR = 150V
IF = 30A
Single
Dual
160.0n
Time [sec]
300
Tc=125deg.C
240
180
120
60
Tc=25deg.C
0
100
200
300
400
500
di/dt [ A/us]
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AN-9742
APPLICATION NOTE
Blocking Capacitor
For half-bridge topology; if the two series DC bank
capacitors or the turn-on time of IGBTs are not matched,
DC flux occurs in the transformer. The accumulated DC flux
eventually drives transformer into saturation. The IGBTs
can be destroyed by sharply increased current due to the
saturated transformer. To block the DC flux in the
transformer core, a small DC blocking capacitor is placed in
series with the transformer primary. The value of the DC
blocking capacitor is given by:
Figure 23. Diode Reverse Recovery Loss
During Welding
Cblocking =
1
Vr ( AVL )
]
EAVL = L Isa 2 [
2
(Vr ( AVL ) VDD)
D max ID
VP Fsw
(12)
(11)
AN-9742
APPLICATION NOTE
Controller Design
The evaluation board uses PIC16f716 for the control
circuits. PIC16f716 controller consists of four ports of 8-bit
AD converter and one port PWM timer with 9-bit, 40KHz
resolution. To generate two PWM pulses from one PWM
signal, a D flip-flop and an AND gate are used to divide the
40KHz PWM into 20KHz PWM pulse (see Figure 28).
R2
+5V
R3
1k
C2
104
17
18
+5V
R19
330
RA0/AN0
C12
104
RA1/AN1
2
RB3
3
+5V
Temp
VR3
5k
+5V
3
2
1
+5V
C19 C20 C21 C22 C23
104 104 104 104 104
R6
1K
R11
MCLR/VPP
RB7
2
Temp
R8
C4
104
ZD!
1
RB6
1N4099
D5
RB5
2
10k
J2
Output
C5
104
RA3/AN3/VREF
RB4
R9
1k
1N4937
RB0/INT
2
1
LVD
7
8
C6
R10
1K
RB1
RB2
RA4/TOCKI
C15
104
7409
8
6
Gate1_1
5
4
gate1_2
3
2n3904d/ON
7474
C13
470P
-15V
+5V
R20
330
C9
22P
330
R12
330
R13
330
+15V
U6
2 PS2501
8
6
3
U4B
5
4
Q1
R18 1K
12
C16
104
Gate2_1
gate2_2
6
5
11
7409
R14
330
R15
330
R16
330
2n3904d/ON
-15V
C14
470P
10
6
3
G1
Cont+
PC1
PC817
105
CLK Q
Q2
R17 1K
13
+5V
VR2
5k
GND
2
1
R7
1K
U3A
5
X1
20Mhz
15
C8
22P
560
U2A
U5
2 PS2501
16
J1
OSC2/CLKOUT
R4
36k R5
C3
104
Current Limit
TH
RA2/AN2
OSC1/CLKIN
J1
1
VR1
5k
BD1
+5V +5V +5V +5V +5V
14
C11
10uF/10V
C10
104
PRE
D4
1N4937
C1
22uF/10V
R1
10 ohm/3W
PIC16C711
C LR
D3
1N4937
U1
2
1
+5V
D2
1N4937
VD D
J3
CT
+15V
+5V
27k
D1
1N4937
G2
Cont-
RD1
SD
G3
PWR
Y1
WLD
RD2
ERR
C7
104
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AN-9742
APPLICATION NOTE
Q I CG = G CG dV / dt
Vge = Rg ICG
DC Reactor Design
DC reactor helps stabilize arc current during welding
operation. As DC reactance grows, specter occurs smaller.
On the contrary, if the mobility of arc is lowered and the LDC
value gets too large, it is harder to create an arc. Therefore,
an appropriate reactor choice is necessary. If considering
VOPEN as output no-load voltage, VWEL and IWEL as rated
output voltage or current; the maximum LDC value can be
obtained from the equation:
: LDC
Figure 31. Effect on dV/dt to Gate Wave
R tR
IWEL
In(1
R)
Vopen
(13)
AN-9742
APPLICATION NOTE
Conclusion
Better performance is expected for a DC-ARC welding
machine when the inverter devices are selected properly
based on the inverter topology and its switching frequency.
This article presents a power device selection guide for a
half-bridge welding machine application.
References
[1]
Aspandiar, Raiyo, Voids in Solder Joints, SMTA Northwest Chapter Meeting, September 21, 2005,
Intel Corporation.
[2] Bryant, Keith, Investigating Voids, Circuits Assembly, June 2004.
[3] Comley, David, et al, The QFN: Smaller, Faster, and Less Expensive, Chip Scale Review.com, August /
September 2002.
[4] Englemaier, Werner, Voids in solder joints-reliability, Global SMT & Package, December 2005.
[5] IPC Solder Products Value Council, Round Robin Testing and Analysis of Lead Free Solder Pastes with Alloys of
Tin, Silver, and Copper, 2005.
[6] IPC-A-610-D, Acceptance of Electronic Assemblies, February 2005.
[7] IPC J-STD-001D, Requirements for Soldered Electrical and Electronic Assemblies.
[8] IPC-SM-7525A, Stencil Design Guidelines, May 2000.
[9] JEDEC, JESD22-B102D, Solderability, VA, Sept. 2004.
[10] Syed, Ahmer, et al, Board-Level Assembly and Reliability Considerations for QFN Type Packages,
Amkor Technology, Inc., Chandler, AZ.
Related Resources
FGH40N60SMD 600V, 40A Field Stop IGBT
FFA60UP30DN 300V Ultrafast Recovery Power Rectifier
FSGM0465R SMPS Power Switch, 4A, 650V (Green)
R6
10
102
+ BUS
Z1
FGH40N60SMD
ZD1
1N4744
BD1
C54
1uF M275V
1
C1
400V 560uF
RV3
20D431K
C2
400V 560uF
GBP5006
ZD3
1N4744
ZD6
1N4744
L6
GND2
FAN
2
R3
10/3W
ZD4
1N4733
10/3W
FGA60UP30DN
630V
Z4
FGA40N60SMD
ZD8
1N4744
ZD9
1N4733
R9
T1
1
Gate2
R8
D3
CT1
C61
R4
4.7k
ZD7
1N4733
R7
4.7k
C50
10uF 630V
Gate1
Z3
FGA40N60SMD
Gate2
RV1
20D431K
1
10/3W
GND1
LF1R
FILTER
C62
472M
R1
R2
4.7k
ZD2
1N4733
D7 FGA60UP30DN
2
RV2
20D431K
C55
472M
P11
1
Z2
FGA40N60SMD
Gate1
1
P3
L5
P10
JF3250G
4
L4
52uH
8
D16
C51
10uF 630V
R39
C24
10/3W
10
+ Output
FGA60UP30DN
TRANSFORMER CT
102
C52
10nF 630V
R5
4.7k
D17
- BUS
D18
D19
FGA60UP30DN
FGA60UP30DN
C53
10nF 630V
FGA60UP30DN
- Output
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AN-9742
APPLICATION NOTE
C209 102
R211 10
D203
T101
EER3940S
L1 10uH
+15v
MBRF10H100
C223
470uF 35V
C224
470uF 35V
10
R212
C208
3.3nF 630V
R207
43K/1W
R208
2
BD201
5D-9
LF201
30mH
C222
470uF 35V
L2 10uH
-15V
U201
6
R201
1M/1W
2KBP06M3N25
C211102
R21310
D205
FGM0465R
L3 10uH
Drain
15+v
Vstr
12
MBRF10H100
C203
400V 100uF
R203
150K
FB
D201
3
Vcc
AC220V N
PC1
Q201
2N2222
C205
33nF 100V
C217
470uF 35V
C218
470uF 35V
D206
L4 10uH
-15V
ZD201
1N4745A
1
C204 R205
47nF 1K
1K 2
14
R204
C220
470uF 35V
GND2
C212 102
1W 5
R209
100 ohm/0.5W
250V 2A
C219
470uF 35V
13
R210
R214 10
UF4004
C202
275Vac 100nF
1N4007
1k
R202
270K
C201
275Vac 100nF
GND
NTC
F201
C211
470uF 35V
MBRF10H100
NTC1
AC220V H
TNR
10D471k
GND1
C210
10 D204
102
11
D202
R206
75K
C206
100nF
MBRF10H100
C207
47uF 50V
R215
10
15
D38
1N4744
C213
D207102
L5
5v
4.9uH
MBRF10H100
C215
470uF 10V
16
XY
C216
1000uF 10V
gnd
4.7nF/1KV
R216
R219
620
3
1
R218
C214
18K
47nF
R220
8K
U202
TL431
8K
R217
1.2k
PC2 817
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
2.
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