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by MAC12/D

SEMICONDUCTOR TECHNICAL DATA

MAC12
SERIES*

 
 
TRIACS

*Motorola preferred devices

Silicon Bidirectional Thyristors

TRIACS
12 AMPERES RMS
400 thru 800
VOLTS

Designed for high performance fullwave ac control applications where high

noise immunity and commutating di/dt are required.

Blocking Voltage to 800 Volts

OnState Current Rating of 12 Amperes RMS at 70C
Uniform Gate Trigger currents in Three Modes
High Immunity to dv/dt 250 V/s minimum at 125C
High Commutating di/dt 6.5 A/ms minimum at 125C
Industry Standard TO220 AB Package
High Surge Current Capability 120 Amperes

MT2

MT1
MT2
G

MT2

MT1

CASE 221A-09
(TO-220AB)
Style 4

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Parameter

Symbol

Peak Repetitive OffState Voltage(1)

(TJ = 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open)

Unit

VDRM

Volts

MAC12D
MAC12M
MAC12N

400
600
800

OnState RMS Current

(Full Cycle Sine Wave, 60 Hz, TC = 70C)
Peak Nonrepetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power (Pulse Width

Value

v1.0 s, TC = 80C)

Average Gate Power (t = 8.3 ms, TC = 80C)

Operating Junction Temperature Range
Storage Temperature Range

IT(RMS)

12

ITSM

100

I2t

41

A2sec

PGM

16

Watts

PG(AV)

0.35

Watts

TJ

40 to +125

Tstg

40 to +150

RJC
RJA

2.2
62.5

C/W

TL

260

THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

IDRM

0.01
2.0

mA

OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)

TJ = 25C
TJ = 125C

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Thyristor Device Data

Motorola, Inc. 1999


 

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)

Characteristic

ON CHARACTERISTICS
Peak OnState Voltage* (ITM =

"17 A)

Continuous Gate Trigger Current (VD = 12 V, RL = 100 )

MT2(+), G(+)
MT2(+), G()
MT2(), G()
Hold Current (VD = 12 V, Gate Open, Initiating Current =

"150 mA)

Latch Current (VD = 24 V, IG = 35 mA)

MT2(+), G(+); MT2(), G()
MT2(+), G()
Gate Trigger Voltage (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()

Symbol

Min

Typ

Max

Unit

VTM

1.85

Volts

5.0
5.0
5.0

13
16
18

35
35
35

20

40

20
30

50
80

0.5
0.5
0.5

0.69
0.77
0.72

1.5
1.5
1.5

(dv/dt)c

6.5

A/ms

dv/dt

250

V/s

IGT

IH

mA

IL

mA
mA

VGT

Volts

DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current*
(VD = 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/s, Gate Open,
TJ = 125C, f = 250 Hz, No Snubber)
Critical Rate of Rise of OffState Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C)
*Indicates Pulse Test: Pulse Width

v2.0 ms, Duty Cycle v2%.

Motorola Thyristor Device Data


 

PACKAGE DIMENSIONS

T
B

SEATING
PLANE

F
T

Q
1 2 3

H
K
Z
L

G
D
N

STYLE 4:
PIN 1.
2.
3.
4.

MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

CASE 221A-09
(TO220AB)
ISSUE Z

Motorola Thyristor Device Data


 

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Motorola Thyristor Device

Data
MAC12/D

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