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AIM:- Introduction to Microwind and Analysis of CMOS 0.25 MICRON technology MOSFET
EXPERIMENT 2.
AIM:- CMOS 0.25 MICRON technology inverter characteristics and layout in Microwind
Fig. 2.5 Graph of the Power Dissipation with temperature variable inverter gate
Fig. 2.6 Graph of the Rise time with input voltage variable inverter gate
Table 2.5 Rise time with input voltage variable of inverter gate
Fig. 2.7 Graph of the Fall time with input voltage variable inverter gate
Table 2.6 Fall time with input voltage variable of inverter gate
Fig. 2.8 Graph of the maximum Idd current with input voltage variable inverter gate
Table 2.7 maximum Idd current with input voltage variable inverter gate
Fig. 2.9 Graph of the Power dissipation with input voltage variable inverter gate
Table 2.8 the Power dissipation with input voltage variable inverter gate
EXPERIMENT 3.
AIM:- layout of basic gate and a complex gate using CMOS 0.25 MICRON technology in Microwind
Complex gate
F=ad +b(cd+ a)
EXPERIMENT4.
AIM:- CMOS 0.25 MICRON technology inverter characteristics and layout in Microwind
EXPERIMENT 5.
AIM:- Layout of Multiplexer , Demultiplexer CMOS 0.25 MICRON technology in Microwind
EXPERIMENT 6.
AIM:- Design and implemented of Layout of full adder CMOS 0.25 MICRON technology in Microwind
EXPERIMENT 8.
AIM:- Design and implemented of Layout of 4*1 MUX CMOS 0.25 MICRON technology in Microwind
EXPERIMENT 9.
AIM:- Design and implemented of Layout of RS latch, D-latch CMOS 0.25 MICRON technology in
Microwind
EXPERIMENT 10.
AIM:- Design and implemented of Layout of synchronous and asynchronous counter CMOS 0.25
MICRON technology in Microwind