CAS300M12BM2

CAS300M12BM2
VDS 1.2 kV
1.2kV, 5.0 m All-Silicon Carbide

Half-Bridge Module
C2M MOSFET and Z-RecTM Diode
Esw, Total @ 300A

RDS(on)
Features
Package
5.0 m
62mm x 106mm x 30mm
Enables Compact and Lightweight Systems

High Efficiency Operation
Mitigates Over-voltage Protection
Reduced Thermal Requirements
Reduced System Cost
Applications
Ultra Low Loss

High-Frequency Operation
Zero Reverse Recovery Current from Diode
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Ease of Paralleling
Copper Baseplate and Aluminum Nitride Insulator
System Benefits
12.0 mJ
Induction Heating
Motor Drives
Solar and Wind Inverters
UPS and SMPS
Traction

Part Number
Package
Marking
CAS300M12BM2
Half-Bridge Module
CAS300M12BM2
Test Conditions
Notes
Maximum Ratings (TC = 25C unless otherwise specified)

Symbol
Value
Unit
VDSmax
Drain - Source Voltage
1.2
kV
VGSmax
Gate - Source Voltage
-10/+25
Absolute Maximum values
VGSop
Gate - Source Voltage
-5/20
Recommended Operational Values
ID
2,Rev. S300M12BM
Datasheet: CA
Parameter
404
Continuous Drain Current
285
ID(pulse)
Pulsed Drain Current
1500
TJmax
Junction Temperature
150
-40 to +125
TC ,TSTG
Case and Storage Temperature Range
VGS = 20 V, TC = 25 C
VGS = 20 V, TC = 90 C
Fig. 24
Pulse width tP = 200 s Repetition rate

limited by Tjmax,TC = 25C
Visol
Case Isolation Voltage
4.0
kV
AC, 50 Hz , 1 min
LStray
Stray Inductance
14
nH
Measured between terminals 2 and 3
PD
Power Dissipation
1660
TC = 25 C, TJ = 150 C
Subject to change without notice.

www.cree.com
Fig. 23
Electrical Characteristics (TC = 25C unless otherwise specified)

Symbol
Parameter
Min.
V(BR)DSS
Drain - Source Breakdown Voltage
1.2
VGS(th)
Gate Threshold Voltage
1.8
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
RDS(on)
Typ.
Max.
2.3
Unit
kV
VGS, = 0 V, ID = 1 mA
VDS = 10 V, ID = 15 mA
2000
VDS = 1.2 kV, VGS = 0V
100
nA
5.0
5.7
500
1000
On State Resistance
Test Conditions
Note
Fig 7
VDS = 1.2 kV,VGS = 0V, TJ = 150 C
8.6
9.8
94.8
VGS = 20 V, VDS = 0V
VGS = 20 V, IDS = 300 A
VDS = 20 V, IDS = 300 A
Fig. 4,
5, 6
gfs
Transconductance
Ciss
Input Capacitance
11.7
Coss
Output Capacitance
2.55
Crss
Reverse Transfer Capacitance
0.07
Eon
Turn-On
Switching Energy

6.05
mJ
EOff
Turn-Off Switching Energy

5.95
mJ
f = 200 kHz, VAC = 25 mV
nC
VDD= 800 V, VGS = -5V/+20V,

ID= 300 A, Per JEDEC24 pg 27
Fig. 15
VDD = 600V, VGS = -5/+20V,

ID = 300 A, RG(ext) = 2.5 ,
Timing relative to VDS
Note: IEC 60747-8-4, pg 83
Inductive load
Fig. 25
RG (int)
VGS = 20 V, IDS = 300 A,

TJ = 150 C
93.3
nF
Internal Gate Resistance
3.0
QGS
Gate-Source Charge
166
QGD
Gate-Drain Charge
475
QG
Total Gate Charge
1025
td(on)
Turn-on delay time
76
ns
Rise Time
68
ns
168
ns
43
ns
tr
td(off)
tf
Turn-off delay time

Fall Time
VDS = 20 V, ID = 300 A, TJ = 150 C
Fig. 8
VDS = 600 V, f = 200 kHz,

VAC = 25 mV
Fig.
16, 17
VDD = 600 V, VGS = -5V/+20V

ID = 300 A, RG(ext) = 2.5
Note: IEC 60747-8-4 Definitions
Fig.
19, 20
Free-Wheeling SiC Schottky Diode Characteristics

Symbol
Parameter
VSD
Diode Forward Voltage
QC
Total Capacitive Charge
Min.
Typ.
Max.
1.7
2.0
2.2
2.5
3.2
Unit
V
Test Conditions
IF = 300 A, VGS = 0
IF = 300 A, TJ = 150 C, VGS = 0
Note
Fig. 9,
10, 11
Note: The reverse recovery is purely capacitive
Thermal Characteristics
Symbol
Parameter
Min.
Typ.
Max.
RthJCM
Thermal Resistance Juction-to-Case for MOSFET
0.070
0.075
RthJCD
Thermal Resistance Juction-to-Case for Diode
0.073
0.076
Unit
C/W
Test Conditions
Tc = 90 C, PD = 150 W
Tc = 90 C, PD = 130 W
Additional Module Data

Symbol
Parameter
Weight
Mounting Torque
Clearance Distance
Creepage Distance
CAS300M12BM2,Rev. -
Max.
Unit
Test Condtion
300
Nm
To heatsink and terminals
12
mm
Terminal to terminal
30
mm
Terminal to terminal
40
mm
Terminal to baseplate
Note
Fig. 27,
28
Typical Performance
600
600
VGS = 20 V
VGS = 20 V
500
VGS = 18 V
400
Drain-Source
-Source Current, IDS (A)
Drain-Source
500
VGS = 14 V
VGS = 16 V
VGS = 12 V
300
VGS = 10 V
200
100
VGS = 14 V
VGS = 12 V
VGS = 16 V
400
VGS = 10 V
300
200
100
Conditions:
TJ = -40C
tp = 200 s
VGS = 18 V
Conditions:
TJ = 25C
tp = 200 s
0
8
Drain-Source Voltage VDS (V)
2.0
600
VGS = 20 V
1.6
On Resistance, RDS On (p.u.)
VGS = 16 V
VGS = 14 V
400
Conditions:
IDS = 300 A
VGS = 20 V
tp = 200 s
1.8
VGS = 12 V
VGS = 18 V
500
VGS = 10 V
300
200
100
Conditions:
TJ = 150C
tp = 200 s
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
25
50
75
100
125
Figure 3. Typical Output Characteristics TJ = 150 C
Figure 4. Normalized On-Resistance vs. Temperature
12
20
Conditions:
IDS = 300 A
tp = 200 s
18
VGS = 12 V
VGS = 14 V
On-Resistance, RDS ON (m)
10
On Resistance, RDS On (m)
150
Junction Temperature, TJ (C)
VGS = 16 V
VGS = 18 V
VGS = 20 V
16
Tj = - 40 C
14
12
10
Tj = 150 C
8
Tj = 25 C
6
4
Conditions:
IDS = 300 A
tp = 200 s
2
0
0
-50
-25
25
50
75
100
125
Figure 5. Typical On-Resistance vs. Temperature for

Various Gate-Source Voltage
3
Figure 2. Typical Output Characteristics TJ = 25 C
Figure 1. Typical Output Characteristics TJ = -40 C
Drain-Source
CAS300M12BM2,Rev. -
150
10
12
14
16
18
Gate-Source Voltage, VGS (V)
Figure 6. Typical On-Resistance vs. Gate Voltage
20
Typical Performance
3.0
500
Conditions
VDS = 10 V
IDS = 15
0.5mA
mA
2.5
Drain-Source
Source Current, IDS (A)
Threshold Voltage, Vth (V)
Typ
2.0
1.5
1.0
0.5
400
TJ = 150 C
300
-25
25
50
75
100
125
TJ = 25 C
200
TJ = -40 C
100
0.0
-50
Conditions:
VDS = 20 V
tp < 200 s
150
Junction Temperature TJ (C)
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
Drain-Source
VGS = 0 V
-100
-200
VGS = -2 V
-300
VGS = -5 V
-400
-4.0
-2.0
-1.5
-1.0
-0.5
0.0
Drain-Source
-100
-200
-300
VGS = -2 V
-400
VGS = 0 V
Conditions:
TJ = 150C
tp = 200 s
Figure 11. Diode Characteristic at 150 C
CAS300M12BM2,Rev. -
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-200
-300
-400
VGS = -2 V
-500
Conditions:
TJ = 25C
tp = 200 s
VGS = 0 V
-600
Figure 10. Diode Characteristic at 25 C
VGS = -5 V
14
-100
-600
-3.0
-2.5
-2.0
-1.5
-1.0
0.0
VGS = 0 V
-100
VGS = 5 V
-200
VGS = 10 V
VGS = 15 V
-300
VGS = 20 V
-400
-500
-600
-0.5
Drain-Source
-2.5
12
Figure 9. Diode Characteristic at -40 C

-3.0
-3.0
VGS = -5 V
-3.5
10
-500
Conditions:
TJ = -40 C
tp = 200 s
-4.0
-3.5

Drain-Source
-3.5
Figure 8. Transfer Characteristic for Various

Junction Temperatures
Figure 7. Threshold Voltage vs. Temperature

-4.0
Gate-Source Voltage, VGS (V)
Conditions:
TJ = -40
25 C
C
tp = 200 s
-500
-600
Figure 12. 3rd Quadrant Characteristic at -40 C
Typical Performance
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
VGS = 0 V
-100
VGS = 5 V
VGS = 10 V
-200
VGS = 15 V
-300
VGS = 20 V
-400
Drain-Source
Drain-Source
VGS = 0 V
VGS = 15 V
-150
VGS = 20 V
-200
Conditions:
TJ = 150C
25 C
tp = 200 s
-600
Figure 14. 3rd Quadrant Characteristic at 150 C

100
25
Conditions:
TJ = 25 C
IDS = 300 A
VDS = 1000 V
Conditions:
TJ = 25 C
VAC = 25 mV
f = 200 kHz
Ciss
10
Capacitance (nF)
20
-250
-300
Figure 13. 3rd Quadrant Characteristic at 25 C
Source Voltage, VGS (V)

Gate-Source
-100
VGS = 10 V
-500
Conditions:
TJ = 25C
25 C
tp = 200 s
15
10
Coss
Crss
0.1
0
0.01
-5
0
200
400
600
Gate Charge (nC)
800
1000
1200
100
100
Drain-Source Voltage, VDS (V)
150
200
1.6
Conditions:
TJ = 25 C
VAC = 25 mV
f = 200 kHz
Ciss
50
Figure 16. Typical Capacitances vs. Drain-Source

Voltage (0 - 200 V)
Figure 15. Typical Gate Charge Characteristics
1.4
10
1.2
Stored Energy, EOSS (mJ)
Capacitance (nF)
-50
VGS = 5 V
Coss
0.1
Crss
1
0.8
0.6
0.4
0.2
0
0.01
0
200
400
600
800
1000
Figure 17. Typical Capacitances vs. Drain-Source

Voltage (0 - 1 kV)
CAS300M12BM2,Rev. -
200
400
600
800
1000
1200
Drain to Source Voltage, VDS (V)
Figure 18. Typical Output Capacitor Stored Energy
Typical Performance
20
14
12
ETotal
10
8
6
EOn
20
ETotal
15
10
0
50
100
150
200
EOn
EOff
2
0
Conditions:
TJ = 25 C
VDD = 800 V
RG(ext) = 2.5
VGS = -5/+20 V
L = 77 H
25
Switching Loss (mJ)
16
Switching Loss (mJ)
30
Conditions:
TJ = 25 C
VDD = 600 V
RG(ext) = 2.5
VGS = -5/+20 V
L = 77 H
18
250
300
350
400
EOff
450
Drain to Source Current, IDS (A)
100
Conditions:
TJ = 25 C
VDD = 600 V
IDS =300 A
VGS = -5/+20 V
L = 77 H
250
300
350
400
450
Figure 20. Inductive Switching Energy vs.

Drain Current For VDS = 800 V, RG = 2.5
80
ETotal
12
ETotal
10
Switching Loss (mJ)
100
60
EOn
40
EOff
8
EOff
EOn
Conditions:
VDD = 600 V
RG(ext) = 2.5
IDS =300 A
VGS = -5/+20 V
L = 77 H
20
2
0
0
0
10
15
20
25
30
35
40
45
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Figure 21. Inductive Switching Energy vs. RG(ext)
Figure 22. Inductive Switching Energy vs. Temperature

450
1800
Drain-Source
Source Continous Current, IDS (DC) (A)
Conditions:
TJ 150 C
1600
Maximum Dissipated Power, Ptot (W)
200
14
120
Conditions:
TJ 150 C
400
350
1400
300
1200
250
1000
200
800
600
150
100
400
200
50
0
0
-25
25
50
75
100
125
Case Temperature, TC (C)
Figure 23. Maximum Power Dissipation (MOSFET) Derating vs Case Temperature
150
Drain to Source Current, IDS (A)
Figure 19. Inductive Switching Energy vs.

Drain Current For VDS = 600V, RG = 2.5
Switching Loss (mJ)
50
CAS300M12BM2,Rev. -
-25
25
50
75
100
125
Case Temperature, TC (C)
Figure 24. Continous Drain Current Derating vs Case

Temperature
Typical Performance
1200
Conditions:
TJ = 25 C
VDD = 600 V
IDS = 300 A
VGS = -5/+20 V
1000.00
Drain-Source
Source Current, IDS (A)
1000
Time (ns)
800
td (off)
600
td (on)
400
tr
200
0
5
10
15
20
25
30
Limited by RDS On
100.00
1 ms
1.00
35
0.1
100
1000
100E-3
0.5
Junction To Case Impedance, ZthJC (oC/W)
Junction To Case Impedance, ZthJC (oC/W)
10
Figure 26. Continous Drain Current Derating vs Case

Temperature
100E-3
0.3
0.1
0.05
0.02
SinglePulse
0.01
100E-6
0.5
10E-3
0.3
0.1
0.05
1E-3
0.02
0.01
SinglePulse
100E-6
10E-6
10E-6
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
Figure 27. MOSFET Junction to Case Thermal Impedance
Figure 25. Timing vs. RG(ext)
1E-3
Conditions:
TC = 25 C
D = 0,
Parameter: tp
0.01
40
External Gate Resistor, RG(ext) (Ohms)
10E-3
100 ms
10.00
0.10
tf
1 s
100 s
CAS300M12BM2,Rev. -
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
Figure 28. Diode Junction to Case Thermal Impedance
Schematic
Package Dimensions (mm)
CAS300M12BM2,Rev. -
Notes
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffic control systems.
Copyright 2014 Cree, Inc. All rights reserved.

The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
9
CAS300M12BM2 Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power

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CAS300M12BM2

1.2kV, 5.0 m All-Silicon Carbide

Esw, Total @ 300A

62mm x 106mm x 30mm

Enables Compact and Lightweight Systems

Ultra Low Loss

Maximum Ratings (TC = 25C unless otherwise specified)

Drain - Source Voltage

Gate - Source Voltage

Absolute Maximum values

Gate - Source Voltage

Recommended Operational Values

Continuous Drain Current

Pulsed Drain Current

Case and Storage Temperature Range

Pulse width tP = 200 s Repetition rate

Case Isolation Voltage

Measured between terminals 2 and 3

Subject to change without notice.

Electrical Characteristics (TC = 25C unless otherwise specified)

Drain - Source Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

VDS = 1.2 kV, VGS = 0V

VDS = 1.2 kV,VGS = 0V, TJ = 150 C

VDS = 20 V, IDS = 300 A

Reverse Transfer Capacitance

Turn-Off Switching Energy

f = 200 kHz, VAC = 25 mV

VDD= 800 V, VGS = -5V/+20V,

VDD = 600V, VGS = -5/+20V,

VGS = 20 V, IDS = 300 A,

Internal Gate Resistance

Total Gate Charge

Turn-on delay time

Turn-off delay time

VDS = 20 V, ID = 300 A, TJ = 150 C

VDS = 600 V, f = 200 kHz,

VDD = 600 V, VGS = -5V/+20V

Free-Wheeling SiC Schottky Diode Characteristics

Diode Forward Voltage

Total Capacitive Charge

Note: The reverse recovery is purely capacitive

Thermal Resistance Juction-to-Case for MOSFET

Thermal Resistance Juction-to-Case for Diode

Additional Module Data

To heatsink and terminals

Drain-Source Voltage VDS (V)

On Resistance, RDS On (p.u.)

Figure 3. Typical Output Characteristics TJ = 150 C

Figure 4. Normalized On-Resistance vs. Temperature

On-Resistance, RDS ON (m)

On Resistance, RDS On (m)

Junction Temperature, TJ (C)

Drain-Source Voltage VDS (V)

Junction Temperature, TJ (C)

Figure 5. Typical On-Resistance vs. Temperature for

Figure 2. Typical Output Characteristics TJ = 25 C

Figure 1. Typical Output Characteristics TJ = -40 C

Drain-Source Voltage VDS (V)

Gate-Source Voltage, VGS (V)

Figure 6. Typical On-Resistance vs. Gate Voltage

Threshold Voltage, Vth (V)