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IRFZ34NPbF
HEXFET Power MOSFET
VDSS = 55V
RDS(on) = 0.040
ID = 29A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Parameter
Max.
29
20
100
68
0.45
20
65
16
6.8
5.0
-55 to + 175
Units
A
W
W/C
V
mJ
A
mJ
V/ns
C
Thermal Resistance
Parameter
RJC
RCS
RJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
Max.
Units
0.50
2.2
62
C/W
1
11/3/03
IRFZ34NPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
RDS(ON)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Min.
55
2.0
6.5
IDSS
LD
LS
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
V(BR)DSS/TJ
IGSS
Typ.
0.052
7.0
49
31
40
Max. Units
Conditions
V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.040
S
VDS = 25V, ID = 16A
25
VDS = 55V, VGS = 0V
A
250
VDS = 44V, VGS = 0V, TJ = 150C
100
VGS = 20V
nA
-100
VGS = -20V
34
ID = 16A
6.8
nC
VDS = 44V
14
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 16A
ns
RG = 18
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Conditions
D
MOSFET symbol
29
showing the
A
G
integral reverse
100
p-n junction diode.
S
1.6
V
TJ = 25C, IS = 16A, VGS = 0V
57
86
ns
TJ = 25C, IF = 16A
130 200
nC
di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
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IRFZ34NPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
4.5V
1
0.1
0.1
10
100
10
100
TJ = 25C
TJ = 175C
10
V DS = 25V
20s PULSE WIDTH
7
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10
100
2.4
100
0.1
0.1
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
10
I D = 26A
2.0
1.6
1.2
0.8
0.4
VGS = 10V
0.0
-60 -40 -20
20
40
60
IRFZ34NPbF
1200
1000
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = Cds + C gd
V DS = 44V
V DS = 28V
16
800
Coss
12
600
400
Crss
200
0
1
I D = 16A
10
100
20
30
40
1000
1000
10
100
TJ = 175C
TJ = 25C
10
10s
100s
10
1ms
VGS = 0V
1
0.4
100
0.8
1.2
1.6
2.0
TC = 25C
TJ = 175C
Single Pulse
1
1
10
100
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IRFZ34NPbF
30
VGS
25
RD
VDS
D.U.T.
RG
- VDD
20
10 V
15
Pulse Width 1 s
Duty Factor 0.1 %
10
90%
0
25
50
75
100
125
150
TC , Case Temperature ( C)
175
10%
VGS
td(on)
tr
t d(off)
tf
10
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
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VDS
D.U.T.
RG
V
- DD
IAS
10 V
tp
0.01
V(BR)DSS
IRFZ34NPbF
140
TOP
120
BOTTOM
ID
6.5A
11A
16A
100
80
60
40
20
VDD = 25V
25
50
75
100
125
150
tp
VDD
VDS
IAS
50K
QG
12V
.2F
.3F
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
IG
175
ID
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IRFZ34NPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
+
-
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
VDD
P.W.
Period
VGS=10V
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
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IRFZ34NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
3- EMITTER
4 - DRAIN
HEXFET
4- DRAIN
14.09 (.555)
13.47 (.530)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
1.40 (.055)
3X
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
INTERNATIO NAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/03
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/