New Product

SUM45N25-58
Vishay Siliconix

N-Channel 250-V (D-S) 175 C MOSFET

FEATURES

PRODUCT SUMMARY
V(BR)DSS (V)
250

rDS(on) ()

ID (A)

0.058 at VGS = 10 V

45

0.062 at VGS = 6 V

43

TrenchFET Power MOSFETS

175 C Junction Temperature
New Low Thermal Resistance Package

RoHS
COMPLIANT

APPLICATIONS
Primary Side Switch
Plasma Display Panel Sustainer Function

TO-263

G
G

D S

Top View
Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free)
S
N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

Parameter
Drain-Source Voltage
Typical Avalanche Voltaged
Gate-Source Voltage
Continuous Drain Current (TJ = 175 C)

TC = 25 C
TC = 125 C

Pulsed Drain Current

Avalanche Current
a

Repetitive Avalanche Energy

Maximum Power Dissipationa

Operating Junction and Storage Temperature Range

L = 0.1 mH
TC = 25 C
TA = 25 Cc

Symbol

Limit

VDS

250

VDS (Avalanche)Typ

300

VGS

30

Unit
V

45

ID

25

IDM

90

IAR

35

EAR

61
375b

PD

3.75

TJ, Tstg

mJ
W

- 55 to 175

Unit

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Junction-to-Ambient (PCB Mount)c

RthJA

40

Junction-to-Case (Drain)

RthJC

0.4

C/W

Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Guaranteed by design
Document Number: 72314
S-70311-Rev. C, 12-Feb-07

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New Product

SUM45N25-58
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter

Symbol

Test Conditions

Min

V(BR)DSS

VDS = 0 V, ID = 250 A

250

VGS(th)

VDS = VGS, ID = 250 A

IGSS

VDS = 0 V, VGS = 30 V

Typ

Max

Unit

Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta

IDSS

VDS = 250 V, VGS = 0 V, TJ = 125 C

50

VDS = 250 V, VGS = 0 V, TJ = 175 C

250

VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A

Forward Transconductance

250

VDS = 250 V, VGS = 0 V

ID(on)

Drain-Source On-State Resistancea

rDS(on)

gfs

70

V
nA
A
A

0.047

0.058

VGS = 10 V, ID = 20 A, TJ = 125 C

0.121

VGS = 10 V, ID = 20 A, TJ = 175 C

0.163

VGS = 6 V, ID = 15 A

0.049

VDS = 15 V, ID = 20 A

70

0.062
S

Dynamicb
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Chargec

Qg
c

Gate-Source Charge

Qgs

Gate-Drain Chargec

Qgd
c

Rise Timec
Turn-Off Delay Timec
Fall Timec

pF

300
170
95

VDS = 125 V, VGS = 10 V, ID = 45 A

td(off)

nC

28

f = 1 MHz

1.6
22

35

VDD = 100 V, RL = 2.78

ID 45 A, VGEN = 10 V, Rg = 2.5

220

330

40

60

145

220

td(on)
tr

140

34

Rg

Gate Resistance
Turn-On Delay Time

5000
VGS = 0 V, VDS = 25 V, f = 1 MHz

tf

ns

Source-Drain Diode Ratings and Characteristics (TC = 25 C)b

IS

45

Pulsed Current

ISM

70

Forward Voltagea

VSD

Continuous Current

Reverse Recovery Time

Peak Reverse Recovery Current
Reverse Recovery Charge

IF = 45 A, VGS = 0 V

trr
IRM(REC)
Qrr

IF = 45 A, di/dt = 100 A/s

1.0

1.5

150

225

ns

12

18

0.9

Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 72314

S-70311-Rev. C, 12-Feb-07

New Product

SUM45N25-58
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100

100
VGS = 10 thru 7 V

6V
80
I D - Drain Current (A)

I D - Drain Current (A)

80

60

40

20

5V

60

40
TC = 125 C
20
25 C

4V

- 55 C

0
0

10

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

150

0.10

g fs - Transconductance (S)

120
25 C
90
125 C
60

30

r DS(on) - On-Resistance ()

TC = - 55 C

0.06
VGS = 6 V
VGS = 10 V
0.04

0.02

0.00

0
0

10

20

30

40

50

60

20

40

60

80

ID - Drain Current (A)

ID - Drain Current (A)

Transconductance

On-Resistance vs. Drain Current

100

20

7000

V GS - Gate-to-Source Voltage (V)

6000
Ciss
C - Capacitance (pF)

0.08

5000
4000
3000
2000
Crss

1000

Coss

VDS = 125 V
ID = 45 A

16

12

0
0

40

80

120

160

200

30

60

90

120

150

VDS - Drain-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

Capacitance

Gate Charge

Document Number: 72314

S-70311-Rev. C, 12-Feb-07

180

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New Product

SUM45N25-58
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2.8

100
VGS = 10 V
ID = 20 A
I S - Source Current (A)

r DS(on) - On-Resistance
(Normalized)

2.4

2.0

1.6

1.2

TJ = 150 C

TJ = 25 C

10

0.8

0.4
- 50

- 25

25

50

75

100

125

150

1
0

175

0.3

TJ - Junction Temperature (C)

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

100

300
290

V (BR)DSS (V)

ID = 1.0 mA

I Dav (a)

10
IAV (A) at TA = 25 C

280
270
260

1
250
240
IAV (A) at TA = 150 C
0.1
0.00001

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0.0001

0.001

0.01

0.1

230
- 50

- 25

25

50

75

100

125

tin (Sec)

TJ - Junction Temperature (C)

Avalanche Current vs. Time

Drain Source Breakdown

vs. Junction Temperature

150

175

Document Number: 72314

S-70311-Rev. C, 12-Feb-07

New Product

SUM45N25-58
Vishay Siliconix
THERMAL RATINGS
100

50

10 s
Limited
by rDS(on)
I D - Drain Current (A)

I D - Drain Current (A)

40

30

20

100 s

10

1 ms
10 ms
1

100 ms
dc
TC = 25 C
Single Pulse

10

0.1
0

25

50

75

100

125

150

175

0.1

TC - Ambient Temperature (C)

10

100

1000

VDS - Drain-to-Source Voltage (V)

Safe Operating Area, Case Temperature

Maximum Avalanche and Drain Current

vs. Case Temperature

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2
0.1
0.1

0.05
0.02
Single Pulse

0.01
10-4

10-3

10-2

10-1

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72314.

Document Number: 72314

S-70311-Rev. C, 12-Feb-07

www.vishay.com
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Legal Disclaimer Notice

Vishay

Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

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