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Bulletin I2401 rev.

A 07/00

50RIA SERIES
MEDIUM POWER THYRISTORS

Stud Version

Features
High current rating
Excellent dynamic characteristics

50 A

dv/dt = 1000V/s option


Superior surge capabilities
Standard package
Metric threads version available
Types up to 1600V V DRM / V RRM

Typical Applications
Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and
speed control circuit
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements

Major Ratings and Characteristics


Parameters
IT(AV)

I t

94

90

80

80

@ 50Hz

1430

1200

@ 60Hz

1490

1257

@ 50Hz

10.18

7.21

KA2s

@ 60Hz

9.30

6.58

KA2s

100 to 1200

1400 to 1600

V DRM/V RRM
tq

Units

50

@ TC

50RIA
140 to 160

50

IT(RMS)
ITSM

10 to 120

typical

TJ

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110

- 40 to 125

Case Style
TO-208AC (TO-65)

50RIA Series
Bulletin I2401 rev. A 07/00

ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number

Voltage

V DRM /V RRM , max. repetitive

VRSM , maximum non-

I DRM /I RRM max.

Code

peak and off-state voltage (1)


V

repetitive peak voltage (2)


V

@ TJ = TJ max.

10

100

150

20

200

300

40

400

500

60

600

700

80

800

900

100

1000

1100

120

1200

1300

140

1400

1500

160

1600

1700

50RIA

mA

15

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s
(2) For voltage pulses with tp 5ms

On-state Conduction
Parameter
IT(AV)

140 to 160

Units

Max. average on-state current

50

50

@ Case temperature

94

90

IT(RMS)

Max. RMS on-state current

ITSM

Max. peak, one-cycle


non-repetitive surge current

I2t

50RIA
10 to 120

Maximum I2t for fusing

80

80

1430

1200

Conditions
180 sinusoidal conduction

t = 10ms

No voltage

1490

1257

t = 8.3ms

reapplied

1200

1010

t = 10ms

100% VRRM

t = 8.3ms

reapplied

Sinusoidal half wave,

t = 10ms

No voltage

Initial TJ = TJ max.

1255

1057

10.18

7.21

9.30

6.58

t = 8.3ms

reapplied

7.20

5.10

t = 10ms

100% VRRM

t = 8.3ms

reapplied

KA2 s

6.56

4.65

I2t

Maximum I2t for fusing

101.8

72.1

KA2s

VT(TO)1

Low level value of threshold

0.94

1.02

1.08

1.17

4.08

4.78

3.34

3.97

1.60

1.78

t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max.


(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.

voltage
VT(TO)2 High level value of threshold

( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.

voltage
rt1

Low level value of on-state

(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.

slope resistance
rt2

High level value of on-state

( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.

slope resistance
VTM

Max. on-state voltage

IH

Maximum holding current

200

IL

Latching current

400

V
mA

Ipk= 157 A, TJ = 25C


TJ = 25C. Anode supply 22V, resistive load,
Initial IT = 2A

Anode supply 6V, resistive load

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50RIA Series
Bulletin I2401 rev. A 07/00

Switching
Parameter
di/dt

current

td

50RIA

Units

Max. rate of rise of turned-on


VDRM 600V

200

VDRM 1600V

100

ITM = (2x rated di/dt) A

0.9

TC = 25C VDM = rated VDRM ITM = 10A dc resistive circuit

Typical delay time

A/s

s
tq

Conditions
TC = 125C, VDM = rated VDRM

Typical turn-off time

110

Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max.

Gate pulse = 10V, 15 source, tp = 20s


TC = 125C, ITM = 50A, reapplied dv/dt = 20V/s
dir/dt = -10A/s, VR=50V

Blocking
Parameter
dv/dt

Max. critical rate of rise of


off-state voltage

50RIA
200
500 (*)

Units Conditions
V/s

TJ = TJ max. linear to 100% rated VDRM


TJ = TJ max. linear to 67% rated VDRM

(*) Available with dv/dt = 1000V/s, to complete code add S90 i.e. 50RIA160S90.

Triggering
Parameter
PGM

Maximum peak gate power

50RIA

PG(AV) Maximum average gate power

2.5

IGM

Max. peak positive gate current

2.5

+VGM

Maximum peak positive


gate voltage

-VGM

TJ = TJ max, t p 5ms

20
V

Maximum peak negative


gate voltage

IGT

Units Conditions

10

10

DC gate current required

250

to trigger

100
50

TJ = 125C

DC gate voltage required

3.5

TJ = - 40C

to trigger

2.5

IGD

DC gate current not to trigger

5.0

mA

VGD

DC gate voltage not to trigger

0.2

VGT

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TJ = - 40C
mA

TJ = 25C

Max. required gate trigger


current/voltage are the
lowest value which will trigger
all units 6V anode-to-cathode
applied

TJ = 25C
Max. gate current/ voltage not to
TJ = TJ max
VDRM = rated voltage trigger is the max. value which
will not trigger any unit with rated
TJ = TJ max
VDRM anode-to-cathode applied

50RIA Series
Bulletin I2401 rev. A 07/00

Thermal and Mechanical Specification


Parameter

50RIA

Units Conditions

TJ

Max. operating temperature range

- 40 to 125

Tstg

Max. storage temperature range

- 40 to 125

0.35

K/W

DC operation

0.25

K/W

Mounting surface, smooth, flat and greased

Non-lubricated threads

RthJC Max. thermal resistance,

junction to case
RthCS Max. thermal resistance,
case to heatsink
T

Mounting torque

wt

Min.

2.8 (25)

Nm

Max.

3.4 (30)

(lbf-in)

28 (1.0)

g (oz)

Approximate weight
Case style

TO-208AC (TO-65)

See Outline Table

RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)

Conduction angle

Sinusoidal conduction Rectangular conduction Units

180

0.078

0.057

120

0.094

0.098

90

0.120

0.130

60

0.176

0.183

30

0.294

0.296

K/W

Conditions
TJ = TJ max.

Ordering Information Table


Device Code

50

RIA 160 S90


2

Current code

Essential part number

Voltage code: Code x 10 = VRRM (See Voltage Rating Table)

Critical dv/dt: None = 500V/s (Standard value)


S90

= 1000V/s (Special selection)

None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A


M

= Stud base TO-208AC (TO-65) M6 X 1

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50RIA Series
Bulletin I2401 rev. A 07/00

Outline Table

Case Style TO-208AC (TO-65)

130

Maximum Allowable Case Temperature (C)

Maximum Allowable Case Temperature (C)

All dimensions in millimeters (inches)

50RIA Series (100V to 1200V)


RthJC (DC) = 0.35 K/W

120
Conduction Angle

110
30

60

100

90
120
180

90

10

20

30

40

50

60

130

50RIA Series (100V to 1200V)


RthJC (DC) = 0.35 K/W

120

110

Conduction Period

100

90
30
80

10

20

60

30

90
120
40

180

50

60

DC
70

Average On-state Current (A)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristic

Fig. 2 - Current Ratings Characteristic

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80

50RIA Series
80

180
120
90
60
30

70
60
50

RMS Limit

40
30

Conduction Angle

20

50RIA Series
(100V to 1200V)
TJ = 125C

10
0

10

20

30

40

50

DC
180
120
90
60
30

90
80
70
60
50

RMS Limit

40
30

Conduction Period

20

50RIA Series
(100V to 1200V)
TJ = 125C

10
0

At Any Rated Load Condition And With


Rated VRRM Applied Following Surge.
Initial TJ = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

1000
900
800
700

50RIA Series
(100V to 1200V)
1

10

1500

100

40

50

60

70

80

Maximum Non Repetitive Surge Current


Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125C
No Voltage Reapplied
Rated VRRM Reapplied

1400
1300
1200
1100
1000
900
800
700

50RIA Series
(100V to 1200V)

600
500
0.01

50RIA Series (1400V to 1600V)


RthJC (DC) = 0.35 K/W

120

110

Conduction Angle

30

100

60

90

120

180

90

5 10 15 20 25 30 35 40 45 50 55
Average On-state Current (A)

Fig. 7 - Current Ratings Characteristics

Fig. 6 - Maximum Non-Repetitive Surge Current

Maximum Allowable Case Temperature (C)

130

0.1
Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current

Maximum Allowable Case Temperature (C)

30

Average On-state Current (A)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

20

Fig. 4 - On-state Power Loss Characteristics

1100

80

10

Average On-state Current (A)

1200

600

100

Fig. 3 - On-state Power Loss Characteristics


1300
Peak Half Sine Wave On-state Current (A)

Maximum Average On-state Power Loss (W)

I2401 rev. A 07/00

Peak Half Sine Wave On-state Current (A)

Maximum Average On-state Power Loss (W)

Bulletin

130

50RIA Series (1400V to 1600V)


RthJC (DC) = 0.35 K/W

120

110

Conduction Period

100

90
30
80

90
60 120
180

DC

10 20 30 40 50 60 70 80 90
Average On-state Current (A)

Fig. 8 - Current Ratings Characteristics

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50RIA Series

180
120
90
60
30

80
70
60
50

RMS Limit

40
30

Conduction Angle

20

50RIA Series
(1400V to 1600V)
TJ = 125C

10
0

Peak Half Sine Wave On-state Current (A)

10 15 20 25 30 35 40 45 50

120
DC
180
120
90
60
30

110
100
90
80
70
60

RMS Limit

50
40

Conduction Period

30

50RIA Series
(1400V to 1600V)
TJ = 125C

20
10
0

20

30

40

50

60

70

80

Average On-state Current (A)

Fig. 9 - On-state Power Loss Characteristics

Fig. 10 - On-state Power Loss Characteristics

At Any Rated Load Condition And With


Rated VRRM Applied Following Surge.
Initial TJ = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

1000
900
800
700
600

50RIA Series
(1400V to 1600V)
1

10

1200

100

1000
900
800
700
600
500

50RIA Series
(1400V to 1600V)

400
0.01

0.1

Pulse Train Duration (s)

Fig. 11 - Maximum Non-Repetitive Surge Current

Fig. 12 - Maximum Non-Repetitive Surge Current


1000

100

TJ = 25C
TJ = 125C

10

50RIA Series (100V to 1200V)


1

1.5

2.5

3.5

4.5

Instantaneous On-state Current (A)

1000

1
0.5

Maximum Non Repetitive Surge Current


Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125C
No Voltage Reapplied
Rated VRRMReapplied

1100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Instantaneous On-state Current (A)

10

Average On-state Current (A)

1100

500

Maximum Average On-state Power Loss (W)

90

Peak Half Sine Wave On-state Current (A)

Maximum Average On-state Power Loss (W)

Bulletin I2401 rev. A 07/00

100

TJ = 25C
10

TJ = 125C

50RIA Series (1400V to 1600V)


1
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Instantaneous On-state Voltage (V)

Instantaneous On-state Voltage (V)

Fig. 13 - Forward Voltage Drop Characteristics

Fig. 14 - Forward Voltage Drop Characteristics

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50RIA Series
I2401 rev. A 07/00
Transient Thermal Impedance ZthJ-hs (K/W)

Bulletin

1
Steady State Value
RthJ-hs = 0.35 K/W

0.1

50RIA Series

0.01
0.001

0.01

0.1

10

Square Wave Pulse Duration (s)

Fig. 15 - Thermal Impedance ZthJC Characteristics


Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr<=0.5 s
b) Recommended load line for
<=30% rated di/dt : 20V, 65 ohms
tr<=1 s
10
(b)
(a)

Tj=125 C

VGD
IGD
0.1
0.001

0.01

(1) PGM = 10W, tp = 5ms


(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500s

Tj=-40 C
Tj=25 C

Instantaneous Gate Voltage (V)

100

(1) (2)

50RIA Series
0.1

(3) (4)

Frequency Limited by PG(AV)


10

100

1000

Instantaneous Gate Current (A)

Fig. 16 - Gate Characteristics

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This datasheet has been download from:


www.datasheetcatalog.com
Datasheets for electronics components.