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CENTURION UNIVERSITY OF TECHNOLOGY AND MANAGEMENT

SCHOOL OF ENGINEERING AND TECHNOLOGY, JATNI


Department of Electronics and Communication Engineering

BASIC ELECTRONICS
ASSIGNMENT-1
Short questions
1. What are conductors, insulators and semiconductors? Give examples.
2. What is the difference between energy level and energy band?
3. Draw the band splitting of a silicon crystal?
4. Why the semiconductor is unable to conduct current at 0k with externally applied electric field?
5. What are elemental and compound Semiconductors? Give examples.
6. Why is Si preferred over Ge and GaAs in the manufacture of semiconductor devices?
7. What do you mean by EHP generation and recombination?
8. What is Intrinsic and extrinsic Semiconductor?
9. What is doping and why it is necessary?
10. What is n-type and p-type semiconductor? How they are made?
11. Draw the band diagram of n-type and p-type semiconductor and show the donor and acceptor energy
level.
12. What are donor and acceptor element? Give examples. Why they named so?
13. What is density of states? Write down its expression in conduction band and valence band.
14. Explain the concept of effective mass of an electron?
15. What the Fermi Dirac distribution function describes? Write down the expression for it.
16. Write down the expression for electron and hole concentration for a semiconductor and define each term.
17. Derive the expression for intrinsic carrier concentration (ni) for a pure semiconductor.
18. Does the intrinsic Fermi level lie exactly at the mid gap? Justify your answer.
19. Define Fermi energy level & show the Fermi energy level of intrinsic, n-type and p-type semiconductor.
20. What is Mass action law?
Long questions/Numerical
1. Describe the energy band splitting of silicon crystal with proper diagram and notations.
2. What is a semiconductor material? Which are the most commonly used semiconductor materials? Explain
how the valence electrons of a semiconductor are responsible for current conduction at room
temperature?
3. Compare semiconductor, conductor and insulator.
4. Compare n-type semiconductor and p-type semiconductor.
5. Derive mathematically the position of Fermi energy level in intrinsic and extrinsic semiconductor..
6. What is mass action law? For extrinsic n-type semiconductor prove the Mass action law.
7. Derive that the drift current density of a semiconductor is Jdrift = (nn +pp) eE.
8. Derive continuity equation and find out the solution when carrier concentration independent of both
position and time with zero electric field.
9. For a particular semiconductor, the effective mass of electron is mn=1.4m. If EC-EF=0.25eV, determine
the effective density of states in conduction band and concentration of free electron in the semiconductor
at T=300k.
10. For a silicon semiconductor material, N C = 2.8 1019 cm-3, NV=1.041019cm-3. If we assume the Fermi
energy level is 0.27eV below the conduction band and the band gap energy is 1.1 eV at T= 300 0K. Then
calculate the thermal equilibrium concentration of electrons and holes. (Given kT=0.0259eV at 3000K).

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