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9 JULY 2001
Masaru Miyayama
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
Bismuth layer-structured ferroelectrics BLSFs are considered to be excellent candidates for application in ferroelectric random access memories FeRAMs. Their coercive
fields are lower than those of other ferroelectrics1 4 and domain configuration in them is the 180 domains, which
makes them potentially useful for FeRAMs available with
low power and operated without degradation of performance
fatigue free.5 Among them, SrBi2Ta2O9 is now studied
extensively for the application to FeRAMs. It has been reported that Sr-deficient and Bi-excess SrBi2Ta2O9 shows an
increase in Curie temperature T C with increasing compositional deviation and a marked increase in remanent
polarization.6,7 Generally, the displacive ferroelectrics with a
higher T C have a larger remanent polarization. Since the T C
of SrBi4Ti4O15 520 C is higher than that of SrBi2Ta2O9
335 C, a high remanent polarization can be expected.
However, there has been no report on ferroelectric properties
of SrBi4Ti4O15 single crystals, but for dielectric properties of
SrBi4Ti4O15 bulk ceramics.8 Therefore, the authors have
grown SrBi4Ti4O15 single crystals and measured their dielectric and ferroelectric properties along the a(b)-axis and
c-axis directions independently, which could not be obtained
using bulk ceramics. In addition to that, the measured remanent polarization and coercive field were compared with
those of other BLSF single crystals8 and their dependences
on T C and m number the number of BO6 octahedra were
evaluated.
SrBi4Ti4O15 single crystals were grown from the melt of
stoichiometric mixtures of Bi2O3, SrCO3, and TiO2 by slow
cooling with the vertical temperature gradient of
23 C/mm.915 Plate-like thin sheets, with a thickness of
approximately 0.2 mm and transverse dimensions of approximately 1 mm2 mm, were obtained by this method.
Figure 1 shows the measured x-ray powder diffraction
pattern and the result of Rietveld analysis using the program
16
RIETAN
for powders prepared by pulverizing the
SrBi4Ti4O15 single crystals. In Fig. 1, a dotted line indicates
the measured pattern, a solid line the calculated pattern, and
FIG. 1. Measured and calculated x-ray diffraction patterns for powders prepared by crushing SrBi4Ti4O15 single crystal; dotted line for the measured
pattern and solid line for the calculated pattern. Cu K , wavelength:
0.1541 nm.
0003-6951/2001/79(2)/251/3/$18.00
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FIG. 4. Saturated hysteresis loops in the SrBi4Ti4O15 single crystal along the
a(b) axis and c axis.
rated remanent polarization P r 0 , respectively. E m 0 corresponds to the minimum applied electric field necessary for
obtaining those saturated values. From Figs. 3a and 3b,
E c 0 , P r 0 , and E m 0 were found to be 26 kV/cm, 29 C/cm2,
and 59 kV/cm, respectively. Figure 4 shows the saturated
P E hysteresis loops along the a(b) axis and c axis, applying the electric field of 59 kV/cm (E m 0 ). Ferroelectricity was
not observed along the c axis.
Figure 5 shows the P r 0 , E c 0 , and E m 0 as a function of
T C in various BLSF single crystals along the a(b) axis.9 The
P r 0 in BLSFs, including SrBi4Ti4O15, showed linear increase
with increasing T C , as shown in Fig. 5. This relationship
holds true not only in BLSFs but also typical perovskite type
compounds, if they are displacive ferroelectrics.17 In general,
the stoichiometric displacive ferroelectrics with large P r 0
have large E c 0 and E m 0 . However, this relationship does not
hold true strictly for all BLSFs, and SrBi4Ti4O15 showed a
relatively small E c 0 , as shown in Fig. 5. Figure 6 shows the
m number dependence of E c 0 and E m 0 in various BLSF
single crystals along the a(b) axis.9 As shown in Fig. 6, our
finding is that the E c 0 and E m 0 in BLSFs, including
SrBi4Ti4O15, decreased with increasing m number.
In summary, SrBi4Ti4O15 m4, T C 520 C single
crystals were grown, and their dielectric and ferroelectric
properties were examined along a(b)-axis and c-axis directions separately. The dielectric permittivity at 1 MHz was
1900 along the a(b) axis at the Curie temperature of 520 C.
This value was ten times higher than that along the c axis.
With respect to the ferroelectricity, the P r 0 was 29 C/cm2
and the E c 0 was 26 kV/cm along the a(b) axis, applying E m 0
of 59 kV/cm. The P r 0 is larger in BLSFs with a higher T C ,
and the E c 0 and E m 0 are smaller in BLSFs with a larger m
number. Ferroelectricity was not observed along the c axis.
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