KSP2222A

tm

NPN General Purpose Amplifier

Features
Collector-Emitter Voltage: VCEO= 40V
Collector Power Dissipation: PC (max)=625mW
Available as PN2222A
TO-92

1 2 3

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings * T

Symbol
VCBO
VCEO
VEBO
IC
TJ
Tstg

= 25C unless otherwise noted

Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Junction Temperature
Storage Temperature

Value

Units

75
40
6.0
600
+150
-55 ~ +150

V
V
V
mA
C
C

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T =25C unless otherwise noted

a

Symbol
PC
RJC
RJA

Parameter
Collector Power Dissipation, by RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

Electrical Characteristics * T

Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE

Max

Units

625
83.3
200

mW
C/W
C/W

= 25C unless otherwise noted

Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(sat)

Base-Emitter Saturation Voltage

fT
Cobo
tON

Current Gain Bandwidth Product

Output Capacitance
Turn On Time

tOFF

Turn Off Time

NF

Noise Figure

Test Condition

Min.

IC = 10A, IE = 0
IC = 10mA, IB = 0
IE = 10A, IC = 0
VCB = 60V, IE = 0
VEB = 3.0V, IC = 0
VCE = 10V, IC = 0.1mA,
VCE = 10V, IC = 1mA,
VCE = 10V, IC = 10mA,
VCE = 10V, IC = 150mA,
VCE = 10V, IC = 500mA,
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 20mA, VCE = 20V, f = 100MHz
VCB = 10V, IE = 0, f = 1.0MHz
VCC= 30V, IC = 150mA,
IB1= 15mA, VBE(off)= 0.5V
VCC= 30V, IC = 150mA,
IB1= IB1 = 15mA
IC = 100A, VCE= 10V,
RS= 1K , f = 1.0KHz

75
40
6.0

Typ.

35
50
75
100
40

Max.

Units

0.01
10

V
V
V
A
nA

300

0.6

0.3
1
1.2
2.0
8
35

V
V
V
V
MHz
pF
ns

285

ns

dB

300

* DC Item are tested by Pulse Test : Pulse Width300us, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

KSP2222A Rev. B

www.fairchildsemi.com

KSP2222A NPN General Purpose Amplifier

July 2006

KSP2222A NPN General Purpose Amplifier

Package Dimensions

TO-92
+0.25

4.58 0.20

4.58 0.15

0.10

14.47 0.40

0.46

1.27TYP
[1.27 0.20]

(0.25)

+0.10

0.38 0.05

0.38 0.05

0.20

3.86MAX

3.60

1.02 0.10

+0.10

1.27TYP
[1.27 0.20]

(R2.29)

Dimensions in Millimeters

2
KSP2222A Rev. B

www.fairchildsemi.com

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Definition of Terms
Datasheet Identification

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Definition

Advance Information

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This datasheet contains the design specifications for

product development. Specifications may change in
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Rev. I20