Sie sind auf Seite 1von 11

LITELITE-ON SEMICONDUCTOR CORP.

ON
LITE
DISCRETE DIVISION

Failure Analysis Report


FA#:
Type of Request
Point of Failure
Received Date:
Completed Date:

FA15133
CCR
Assembly process
2/25/2015
2/26/2015

Prepared by

Cindy Duan

Approved by

CZ Liu

LITELITE-ON SEMICONDUCTOR CORP.


ON
LITE
DISCRETE DIVISION

D1 Failure information
Report#

FA15133

Problem Description
Was received customer IQC CKD feedback this defect issue to us.

Detailed Sample Information


Customer

P/N

SB5150

Technology

SCH

Package type DO-201AD

Lot No.

NA

Data Code

4104

Fail rate

Qty failed

Qty Received

NA

Analysis Summary
Unit#

Failure TEST

Failure Mechanism

Comment

1#

SHORT

Surge mark

EOS

LITELITE-ON SEMICONDUCTOR CORP.


ON
LITE
DISCRETE DIVISION

D2 FA result

Failure Analysis Flow Matrix


Non-Destructive FA

Destructive FA

(V)

External Visual

()

()

Cleaning

()

Dry baking

(V)

X-ray

()

Die Probe

(V )

ATE Test

()

SEM

Curve tracer

()

EDX

SAT

()

Cross-sectioning

(Including C/B/T Scan)

()

FIB

()
()

Mechanical Decap

( )

SIMS

(V) Chemical Decap

( )

EMMI/OBIRTH

(V ) Internal Visual (OM)

( )

Other

( )

LITELITE-ON SEMICONDUCTOR CORP.


ON
LITE
DISCRETE DIVISION

External Visual

Comments: the sample was used by observed the solder and the package was
observed no abnormal.

LITELITE-ON SEMICONDUCTOR CORP.


ON
LITE
DISCRETE DIVISION

Electrical Verification

Test item (unit)

VF (V)

VB(V)

IR(A)

Test condition

IF=5A

IR=8A

VR=150V

1#

short

min

150

max

0.92

Comments: the test data was showed on the above and the returned

sample failed.

LITELITE-ON SEMICONDUCTOR CORP.


ON
LITE
DISCRETE DIVISION

X-RAY Inspection Analysis

Comments: the internal structure was observed normal by X-Ray inspection.

LITELITE-ON SEMICONDUCTOR CORP.


ON
LITE
DISCRETE DIVISION

Decapsulation (after C/P removing)

Comments: the assembly was observed no abnormal.

LITELITE-ON SEMICONDUCTOR CORP.


ON
LITE
DISCRETE DIVISION

Decapsulation (after Cu removing)


P side

N side

Comments: the solder coverage was normal but the surge mark was
observed on the failed die.

LITELITE-ON SEMICONDUCTOR CORP.


ON
LITE
DISCRETE DIVISION

Decapsulation (after Cu removing)


P side

N side

Comments: the surge mark was confirmed on failed die P side.

LITELITE-ON SEMICONDUCTOR CORP.


ON
LITE
DISCRETE DIVISION

Electrical Simulation Test-1


We take 10pcs units to perform R/S verification as following step:
Testing condition:,WIDTH=100uS,PERIOD=1000uS,P.NO=10
Testing SPEC : IR=1A
Testing result as following :
Device
Reverse Surge SPEC:>1.0A
SB5150

1.0A
0/10

2.0A
0/10

3.0A
0/10

3.5A
0/10

3.8A
0/10

4.0A
1/10

We take failure units to perform FA and got the similar failure


mode with customer feedback.

LITELITE-ON SEMICONDUCTOR CORP.


ON
LITE
DISCRETE DIVISION

F/A Summary or Conclusion

1. From current analysis result, no abnormality can be observed in


assembly process.
2. The surge mark was observed on the failed die. It was
suspected that the failure mechanism was caused by the abnormal
surge shock or voltage. The temperature of junction rose very
rapidly but the thermal stored in unit could not drop away in short
time, finally the unit broke down.

Das könnte Ihnen auch gefallen