55:041 Electronic Circuits

The University of Iowa

Fall 2010

Exam 2
Name: ___________________________

Score__________/60___

Question 1 One point unless indicated otherwise.

1.

An engineer measures the (step response) rise time of an amplifier as = 0.35 s.

Estimate the 3 dB bandwidth of the amplifier.
Answer:

0.35

0.35
=
0.35 106
= 1 MHz

2.

True or false: increases with increasing collector bias current .

Answer: True

3.

Many BJT datasheets do not list explicitly, but list an equivalent h-parameter instead.
What is this parameter?
Answer:

4.

True or false: the of a transistor decreases with decreasing temperature.

Answer: False

5.

True or false: in a forward-biased pn junction, the diffusion capacitance is generally

much larger than the junction capacitance .
Answer: True

6.

True of false: a power MOSFETs transconductance is less subject to changes in

temperature than a power BJTs s is subject to changes in temperature.
Answer: True

55:041 Electronic Circuits

7.

The University of Iowa

Fall 2010

True or false: a major advantage of FETs over BJTs in power amplifiers is that FETs do
not suffer from thermal runaway, but BJTs do.
Answer: True

8.

Briefly (12 sentences) explain why there is not a Miller effect in a common-base circuit?
Answer: The Miller effect is present when there is a parasitic capacitor between the input
and output of an inverting amplifier. The common-base amplifier is a non-inverting
amplifier.

9.

True or false: The input resistance of a BJT amplifier in the CB configuration, biased at
10 mA is in the order of 2.5 (2 points)
Answer: True

10.

True or false: consider a BJT in the CE configuration, biased at IC = 2 mA. The smallsignal input resistance is in the order of 500K (2 points)
Answer: False. = = (40 ). With = 100, = 1.25K

55:041 Electronic Circuits

The University of Iowa

Fall 2010

Question 2 Consider the circuit below. The duty cycle and frequency of the 555 astable is 60%
and 10 kHz respectively.

(a) Specify a value for to ensure that the average current through the IR diode does not
exceed 30 mA (4 points)
(b) Explain (2 sentences maximum) the purpose of the decoupling capacitor (1 point)
Solution
Part (a) The peak current must be = 30(0.6) = 50 mA. This value will give an
average of 30 mA with a 60% on time. Assuming the () = 0.7 V for the BJT, then
= 0.70.05 = 14 . Choose the closest standard value of 15 .

Part (b) When the FET switches, large current spikes may appear on the supply rail, which can
propagate into the IC and disturb its operation. The decoupling capacitor provides a local
reservoir of energy, and ensures a clean power supply rail.

55:041 Electronic Circuits

The University of Iowa

Fall 2010

Question 3 Consider a BJT with a rated power of 20 W, and a maximum allowable junction
temperature ,max = 175 . The transistor is mounted on a heat sink with parameters
casesink = 1 /W, and sinkamb = 5 /W. Determine how much power the BJT can safely
dissipate. (10 points)
Hint: The thermal resistance from the device/junction to the case is not given explicitly, so show
that it is = 7.5 /W before proceeding.

Solution

The thermal resistance from the device/junction to the case is not given explicitly, so we need to
determine it before proceeding. The BJT is rated at 20 W at ,max = 175 , and an ambient
temperature of = 25 is assumed. A thermal model and the calculation of devcase is then
= + (devcase )
175 = 25 + 20(devcase )
devcase = 7.5 /W
Now we can determine the maximum allowable power dissipation when the BJT is mounted on
a heat skink with the given parameters. A thermal model for the problem is shown below.

= + (devcase + casesink
, =
=

+ sinkamb )

,max
(devcase + casesink + sinkamb )
175 25
1 + 5 + 7.5

= 11.1 W

55:041 Electronic Circuits

The University of Iowa

Fall 2010

Question 4
= 0.25 k
= 2 k
= 4 k
= 65 mAV
= 2 F
= 50 pF
Plot and fully label the Bode diagram (amplitude only). Show all pertinent calculations
(8 points)
Solution
For the midband gain, treat as a short- and as an open circuit. Then

+
2
65 4
=
2.25
= 231

Part (b) The lower 3 dB time constant is 1 = ( + ) = 2 106 (2.25 103 ) = 4.5 ms.
The upper 3 dB time constant is 2 = = (4 103 ) (50 1012 ) = 200 ns. The corner
frequencies are then
1
1
= 796 kHz
=
= 35.4 Hz
=
21
22

55:041 Electronic Circuits

The University of Iowa

Fall 2010

Question 5 Consider the CE BJT amplifier below.

= 1 mA
= 185
= 100 pF
= 14 pF
= 4.5 k
= 0.04 A/V

1
2
3
(a) Draw a hybrid- small signal model of the amplifier. Be sure to include , , , and .
(4 points)
(b) Estimate the upper 3 dB bandwidth. (6 points)
Solution
Part (a)

Part (b) The Miller effect transforms to a value = (1 + | |) where =

( ), the gain working across . That is
= (1 + 136)(14 pF) = 1.92 nF

The Miller capacitance is in parallel with . A small signal model is

The time constant is = ( + )(1 2 ) = (2.02 109 )(795) = 1.61 . The

upper 3 dB frequency is then
1
=
= 99.1 kHz
2
6

55:041 Electronic Circuits

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The University of Iowa

Fall 2010

55:041 Electronic Circuits

The University of Iowa

Fall 2010

Question 6 For the circuit below, determine the 21 parameter (4 points).

Note: do not calculate the other h-parameters.

Solution
To determine 21 , set 2 = 0, and determine 2 1
11 =
Use KCL to find 2 and the 2 1 :

1 + 501 + 2 = 0 2 = 511 and 21 =

1 2 =0

21 =

511
= 51 A/A
1

1 2 =0

55:041 Electronic Circuits

The University of Iowa

Fall 2010

Question 7 For the circuit below 2 = 1 F and = 100. Ignore and and . A dc
analysis reveals that = 3.1K. Use BJT scaling and time constant concepts and determine the
3-dB frequency. (8 points)

Solution
The resistance looking back into the emitter is, using BJT scaling
=

3.1K + 0.5K100K
= 35.6
1 + 100

is in parallel with , so that the time constant is

= (35.6 )10K + 10K)2 (10K)(1 106 ) = 0.01 s

The 3-dB frequency is then 3dB = 1(2) = 15.6 Hz

55:041 Electronic Circuits

The University of Iowa

Fall 2010

Question 8 The maximum current, voltage, and power ratings for a power MOSFET are 4 A,
40 V, and 30 W, respectively.

(a) Sketch and label the SOA for the MOSFET using linear voltage and current scales (4 points)
(b) For the amplifier above sketch the load line that produces maximum power in the transistor
for = 40 V (2 points)
(c) Determine the maximum possible drain current for = 40 V (4 points)
Solution

Part (a) and (b) The SOA is shown below along with a load line that gets it the closest to the
maximum power ratings, yet still stay in the SOA.

Part (c) The maximum power limit hyperbola determines the load line. Maximum power
dissipation occurs at 20 V. At 20 V, = max 20 = 1.5 A. By similar triangles, the load line
intersects the axis at 3 A.

10