Beruflich Dokumente
Kultur Dokumente
CRITICAL REVIEW
www.rsc.org/csr
Introduction
Nowadays, fossil fuel (such as coal, oil, and gas) production and
use gives rise to a mass of environmental problems, and also their
a
Yuze Lin
This journal is
View Online
This journal is
View Online
View Online
Table 1
Optical and electronic properties, mobilities, and OPV performance of dye-based donors
lmaxa/nm
a1
a3
a4
a6
a7
755
850
590
688
2 105 (S, N)
1.7
a8 607
a9 649
a10 616
a11
a12
a13
a14
a15
a19
a20
a21
a22
a23
a24
a25
a26
a27
a28
5 105 (O, N)
7 106 (O, N)
105104 (O)
1.2 104 (O, N)
1.3 103 (O, N)
595
760
770
820
700
a16 710
a17 588
a18 675
1 105 (O, N)
1.95
1.70
672
742
720
660
695
1.70
2.01
676
660
1.72
1.67
550
1.94
1.7
1.73
3.64 10
5.25 105
5.4(U)/
5.2(U)/
5.6/3.6
5.4/3.6
5.80/3.76
5.59/3.68
5.75/3.59
5.69/3.54
5.0/3.3
5.0/3.3
5.14/3.37
5.3/3.4
5.3/3.7
5.69/3.66
5.56/3.75
5.03/3.0
5.2(U)/3.7
5.2(U)/3.4
5.46/3.46
5.40/3.68
5.5/3.9
(S, B) 5.27/3.54
(S, N) 5.55/3.42
a1/f1
a1/C60
a1:C60 (1 : 1 vac)
a1/a1:C60 (1 : 1 vac)/C60
a3/C60
a4/C60
a6/C60
a7(sol)/C60
a7(vac)/C60
a8:PC61BM (1 : 3)
a9:PC61BM (3 : 7)
a10:PC61BM (9 : 11)
a10:C60 (1 : 1 vac)
a10:C60 (9 : 11 vac)
a11:PC71BM (9 : 11)
a12:PC61BM (1 : 3)
a13:PC71BM (1 : 3)
a14:PC71BM (3 : 2)
a15/C60
a15(sol)/C60
a15:PC71BM (1 : 6)
a16(sol)/C60
a17:PC61BM (1 : 2)
a18:PC61BM (1 : 2)
a17:a18:PC61BM (1 : 1 : 2)
a19:PC61BM (1 : 2)
a20:PC61BM (7 : 3)
a21:PC71BM (1 : 1)
a22:PC71BM (3 : 2)
a23:PC61BM (1 : 1)
a24:PC71BM (2 : 1)
a25:PC61BM (3 : 2)
a26:PC61BM (1 : 1)
a27:PC61BM (1 : 2)
a28:PC71BM (1 : 2)
2.3
18.8
15.4
15.0
15.1
3.36
5.6
6.1
5.3
6.3
8.24
11.5
12.6
10.2
5.70
9.32
12.6
6.89
9.71
12.0
10.0
4.43
4.14
4.70
7.00
8.42
9.2
10
4.9
8.3
11.27
6.3
5.94
8.87
0.95f
3.6g
3.5
5.0h
2.1i
4.2
2.1
1.5
2.5
1.54
1.74
2.59
4.9j
6.1
4.5
1.24
1.99
1.79
3.2
4.1
5.5
5.7
1.17
1.34
1.70
2.17k
2.33
3.0
4.4
1.53
3.7
4.06
1.76
1.42
2.22
0.45
0.58
0.50
0.54
0.68
0.57
0.97
0.55
0.79
0.90
0.76
0.94
0.80
0.96
1.0
0.62
0.57
0.31
0.83
0.78
0.92
0.90
0.80
0.75
0.87
0.75
0.67
0.75
0.92
0.77
0.76
0.84
0.76
0.78
0.72
0.65
0.52
0.46
0.61
0.50
0.53
0.57
0.49
0.49
0.32
0.36
0.34
0.48
0.47
0.44
0.35
0.37
0.47
0.55
0.54
0.5
0.64
0.34
0.44
0.42
0.45
0.44
0.48
0.41
0.58
0.42
0.38
0.31
0.35
1
57
59
6
61
63
67
69
70
72
72
73
74
12
75
79
80
81
82
83
84
86
88
88
89
90
91
92
93
94
95
96
97
99
100
a
In lm. b O and S: measured by OFET or SCLC method, N and B: in neat or blend lm. c From electrochemistry unless stated otherwise,
U: from UPS. d Donor/acceptor: bilayer by vacuum deposition unless stated otherwise; donor:acceptor: blend by solution process unless stated
otherwise; vac: vacuum deposition; sol: solution process. e AM1.5, 100 mW cm2 unless stated otherwise. f AM2, 75 mW cm2. g 150 mW cm2.
h
120 mW cm2. i 119 mW cm2. j 88 mW cm2. k 90 mW cm2.
in the solar spectrum have energies corresponding to wavelength of 6001000 nm. Nonplanar Pc molecules, such as
chloroaluminum phthalocyanine (AlClPc, a3), exhibited an
absorption peak in the near-infrared around 755 nm and
harvested a greater percentage of infrared photons.61 The
out-of-plane Cl atom bonded to the central Al atom with
square-pyramidal geometry strongly inuences the molecular
packing, inducing an interleaved slip-stack arrangement and
signicant red shift in absorption compared to CuPc (maximum
absorption wavelength of ca. 630 nm). Additionally, ultraviolet
photoelectron spectroscopy (UPS) measurements indicate that
the highest occupied molecular orbital (HOMO) energy of a3 is
shifted to 5.4 eV, ca. 0.1 eV farther from vacuum than that of
a1, which is benecial for an increased VOC. The optimized
a3/C60 bilayer devices exhibit an overall improvement in PCE
from 1.8% of a1/C60 bilayer devices to 2.1%.61
Oxo-titanium phthalocyanine (a4) has also been applied in
the OPV devices as donor materials leading to both a higher
absorbance at long wavelengths and an increased VOC in
a4/C60 bilayer OPV devices as compared to a1.62,63 The studies
of a4 lms have determined that vapor deposition results in
the formation of at least two distinct phases with dierent
absorption spectrum. In 2009, Armstrong et al. reported that
Chem. Soc. Rev.
View Online
This journal is
View Online
View Online
View Online
Fused acenes
In organic eld-eect transistors (OFETs), fused acenes, such
as pentacene and tetracene, have been extensively studied as a
p-type semiconductor, and especially, pentacene is well known
to exhibit extremely high hole mobility (over 1 cm2 V1 s1).101,102
The high mobility is a key factor to enhance the PCEs of OPV
devices. This type of materials has been successfully applied in
vacuum deposited bilayer or solution processed BHJ OPVs,
due to their high hole mobility, broad absorption and good
thermal stability. Table 2 provides a summary of electronic
properties as well as OPV data for representative fused acene
donors (Fig. 3).
In 2004, Kippelen et al. rst fabricated an ecient OPV
based on a bilayer heterojunction of polycrystalline pentacene (b1)
and C60.103 Under illumination of broadband light 100 mW cm2,
the device exhibited a JSC of 15 mA cm2, VOC of 0.36 V, FF
of 0.50, and PCE of 2.7%. Obviously, in this device the most
limiting factor is the low VOC. JSC and PCE were projected to be
around 8.2 mA cm2 and 1.5% under AM1.5, 100 mW cm2.
In 2005, Yang et al. fabricated bilayer heterojunction OPVs
with tetracene (b2)/C60 as the photoactive layer.104 The PCEs
of the devices were 2.3% under AM1.5 solar illumination at
100 mW cm2.
Researchers have tried to use the fused acenes for applications in solution processable BHJ OPVs by properly functionalizing with solubilizing groups such as triisopropylsilylethynyl
(b3).105 Unsubstituted pentacene adopts a herringbone motif
in solid state, while 6,13-bis(triisopropylsilylethynyl)pentacene
exhibits a structural improvement in solid state, promoting
face-to-face instead of face-to-edge (herringbone) packing,
leading to close cofacial p-stacking.36,106 Such modication oers
tunability of the p-orbital overlap and therefore control of intrinsic
charge carrier mobility, an important parameter for OPV applications. b3 can be crystallized in lm and absorb farther into the red
than pentacene, theoretically leading to higher photocurrent and
PCE. Unfortunately, b3 rapidly undergoes a DielsAlder reaction with fullerene derivatives in solution, and b3-fullerene
adduct ineectively supports photoinduced charge transfer.
Hereby, Anthony, Malliaras and coworkers fabricated a bilayer
device (spin-coated b3 layer and vacuum-deposited C60 layer),
Table 2
Optical and electronic properties, mobilities, and OPV performance of fused-acene-based donors
lmaxa/nm
b1
b2
b3
b4
b5
b6
b7
b8
b9
b10
b11
b12
b13
520
535
612
503
537
620
368
375
Egopt/eV
1.77
2.14
1.65
2.16
0.11 (O, N)
2.25
2.19
2.0
1.90
0.07 (O, N)
104105 (S, B)
2.87
2.51
2.3103 (O, N)
HOMOc/LUMO/eV
5.15/2.98
5.36/2.76
5.16/3.00
5.51/3.00
5.3/2.8
5.1/3.0
5.46/3.60
5.25/2.64
5.03/2.6
5.28/2.77
JSC/mA cm2
Active layerd
b1/C60
b2/C60
b3(sol)/C60
b4:PC61BM (7 : 3)
b5/C60
b6/C60
b7:PC61BM (1 : 1.17)
b8:PC61BM (1 : 4)
b9:PC61BM (1 : 1)
b10:PC71BM (1 : 1)
b11:f3 (2 : 3)
b12:PC61BM (1 : 2)
b13:PC71BM (1 : 2)
15
7.0
1.9
2.96
1.48
1.73
1.37
4.55
6.55
5.41
3.35 102
2.68
6.37
VOC/V
0.363
0.58
0.47
0.84
1.06
0.31
0.762
0.78
0.83
0.80
0.69
0.90
1.0
FF
0.50
0.57
0.52
0.40
0.34
0.37
0.44
0.40
0.41
0.45
0.4
0.61
0.38
PCEe (%)
f
2.7
2.3
0.5
1.0
0.5
0.2
1.12g
1.40
2.25
1.95
1.95h
1.46
2.5
Ref.
103
104
105
107
108
108
109
112
113
114
115
116
117
a
In lm. b O and S: measured by OFET or SCLC method, N and B: in neat or blend lm. c From electrochemistry. d Donor/acceptor: bilayer by
vacuum deposition unless stated otherwise; donor:acceptor: blend by solution process; sol: solution process. e AM1.5, 100 mW cm2 unless stated
otherwise. f Broad band light 100 mW cm2. g 41 mW cm2. h At 490 nm, 0.47 mW cm2.
This journal is
View Online
Fig. 3
View Online
c1
c2
c3
c4
c5
c6
c7
c8
c9
c10
c11
c12
c13
c14
c15
c16
c17
c18
c19
c20
c21
a
d
e
Optical and electronic properties, mobilities, and OPV performance of oligothiophene-based donors
lmaxa/nm
Egopt/eV
573
579
614
580
618
563
650
503
548
415
720
720
390
426
450
535
495
400
390
399
1.77
1.68
1.68
1.74
1.69
1.83
1.73
2.00
1.87
1.9
1.51
1.5
2.13
2.1
2.06
1.74
2.28
2.65
HOMOc/LUMO/eV
Active layerd
JSC/mA cm2
VOC/V
FF
PCEe (%)
Ref.
5.3(U)/3.1
5.6(U)/
5.43/3.87
5.13/3.42
5.13/3.29
5.21/3.68
5.11/3.54
4.95/3.26
5.50/3.34
5.65/3.64
5.28/3.38
5.16/3.60
5.2/3.6
5.26/2.66
5.29/3.16
c1:C70 (1 : 5) (vac.)
c2/C60
c3:C60 (2 : 1) (vac.)
c4:PC61BM (1 : 1.4)
c5:PC61BM (2 : 1)
c6:PC61BM (2 : 1)
c7:PC61BM (2 : 1)
c8:PC61BM (1 : 0.8)
c9/C60
c10/C60
c11:PC71BM (1 : 4)
c12:PC71BM (3 : 2)
c13:PC71BM (7 : 3)
c14:PC61BM (1 : 1.2)
c15:PC71BM (1 : 2)
c16:PC61BM (1 : 4)
c17:PC61BM (1 : 4)
c18:PC71BM (1 : 4)
c19:PC61BM (1 : 2)
c20:PC61BM (1 : 3)
c21:PC61BM (1 : 3)
9.2
10.6
11.1
12.4
10.74
13.98
9.77
11.51
3.1
4.7
8.45
10.9
14.4
3.65
4.61
3.35
2.5
4.79
4.19
1.13
1.33
0.58
0.98
0.97
0.88
0.86
0.92
0.93
0.80
0.98
1.00
0.82
0.7
0.78
0.85
0.94
0.94
0.93
0.93
0.97
0.85
0.51
0.45
0.49
0.49
0.34
0.55
0.47
0.60
0.64
0.57
0.67
0.43
0.42
0.59
0.26
0.36
0.40
0.47
0.37
0.42
0.24
0.27
2.38
3.4f
5.2
3.7
5.08
6.10
5.44
5.84
1.73
3.15
3.0
3.2
6.7
0.80
1.54
1.3
1.12
1.64
1.72
0.29g
0.20h
119
120
124
126
127
14
128
129
133
133
134
135
15
136
137
138
140
145
147
148
149
5.4/3.3
5.1/3.2
5.28/3.07
In lm. b O and S: measured by OFET or SCLC method, N: in neat lm. c From electrochemistry unless stated otherwise, U: from UPS.
Donor/acceptor: bilayer by vacuum deposition; donor:acceptor: blend by solution process unless stated otherwise; vac: vacuum deposition.
AM1.5, 100 mW cm2 unless stated otherwise. f 118 mW cm2. g 80 mW cm2. h 99 mW cm2.
This journal is
View Online
Fig. 4
This journal is
View Online
In 2010, Frechet and coworkers reported a series of platinumacetylide linear oligothiophenes containing a thienyl-BT-thienyl
core, and various oligothiophenes were connected to control the
molecular packing by changing the number of thiophene units
from two to four.134 The best device based on the oligomer with
terthiophene (c11) blending with PC71BM (1 : 4) after annealing
at 70 1C for 30 min exhibited a JSC of 8.45 mA cm2, VOC of
0.82 V, FF of 0.43, and PCE of 3.0%. Recently, Bazan and
coworkers introduced dithienosilole (DTS) in oligothiophenes.135
The DTS-containing oligothiophenes showed broad absorption
extending beyond 700 nm, due to intramolecular charge transfer.
After annealing at 110 1C for 2 min, BHJ OPVs based on
c12:PC71BM (3 : 2) showed a JSC of 10.9 mA cm2 and PCE of
3.2%. Later, Heeger, Bazan and coworkers synthesized one
novel isomeric compound (c13) of c12, and used it to fabricate
solution processed BHJ OPVs.15 Compound c13 exhibited
strong optical absorption, especially from 600 to 800 nm,
and a high hole mobility of ca. 0.1 cm2 V1 s1 measured by
organic eld-eect transistor (OFET). Under AM1.5 irradiation (100 mW cm2), a record PCE of 6.7% was achieved for
small-molecule donor based BHJ devices from c13:PC71BM
(7 : 3, w/w). This high eciency was obtained by adding
remarkably low percentage of solvent additive (0.25% v/v of
1,8-diiodooctane) during the lm-forming process, which led
to decreased domain sizes in the BHJ layer. Additionally, the
low fraction of fullerene in BHJ layer is surprising and
interesting. The high performance at such a low fullerene
concentration indicated that the crystalline donor may render
the fullerene acceptor to form percolated pathways to the
electrode. Moreover, it seems that lower fullerene concentration has some connection with the small amount of additive
required to achieve optimized BHJ morphologies.
Aside from linear oligothiophenes, two-dimensional oligothiophene systems have also been reported. Early in 2006, Liu,
Tian and coworkers reported X-shaped conjugated systems
with four linear oligothiophene arms connected to a central
thiophene core.136 c14 with the longest arms had the lowest
bandgap with an absorption onset of 520 nm; the blend of c14
and PC61BM exhibited the smallest feature size in AFM
images. BHJ OPVs based on c14:PC61BM gave a PCE of
0.80% under simulated solar illumination. Recently, Zhan and
coworkers reported a new X-shaped oligothiophene (c15) with
four longer arms than c14.137 Owing to the longer conjugation,
c15 exhibited red shifted absorption with the maximum at
426 nm and the onset of 582 nm in lm relative to c14.
BHJ OPVs based on the blend of c15:PC61BM (1 : 2) gave a
VOC of 0.93 V, JSC of 2.71 mA cm2, FF of 0.40, and PCE of
1.02%. Replacing PC61BM with PC71BM led to an improved
JSC of 4.61 mA cm2 and a higher PCE of 1.54%.
In 2006, Kopidakis et al. investigated 1,3,5 and 1,2,4,5substituted phenyl-cored thiophene dendrimers as donor materials
in photovoltaic application.138 Once again, the oligomers with
the longest oligothiophene arms exhibited the best performance.
Although three-armed dendrimers had superior mobility,
four-armed dendrimers enabled solution-cast lm formation
and yielded smaller optical bandgap. The best material (c16)
consisted of a 1,2,4,5-substituted phenyl core with each arm
containing six thiophenes. Solution processed BHJ devices
based on c16:PC61BM (1 : 4) exhibited PCE of 1.3%,
This journal is
View Online
View Online
Table 4
Optical and electronic properties, mobilities, and OPV performance of TPA-based donors
560
569
581
534
436
508
498
536
592
542
684
550
587
435
1.8
1.73
1.64
2.03
2.31
2.09
1.88
1.79
1.7
1.91
544
540
538
1.91
1.84
1.78
538
563
585
486
541
529
1.78
1.78
1.9
1.83
1.65
2.14
1.86
1.96
5.1/3.3
5.14/3.37
5.10/3.42
5.16/2.99
5.39/2.91
5.4(U)/
(S, N) 5.14/2.76
5.16/3.37
5.4(U)/
5.15/3.71
5.46(U)/
5.43/3.57
1.86
2.38
6.02/
5.50/
5.72/
5.78/
5.28/3.11
5.22/3.34
5.03/3.42
5.41/3.37
5.3/3.27
5.19/3.08
0.867
d1:PC61BM (1 : 1)
d2:PC71BM (1 : 3)
4.84
d3:PC71BM (1 : 3)
5.71
d4:PC71BM (1 : 3)
7.49
d5:PC71BM (1 : 4)
9.39
4.9
d6:PC71BM (1 : 3)
d7:PC71BM (1 : 3)
5.07
5.94
d8:PC71BM (1 : 3)
3.06
d9/C60
9.53
d10:C70 (1 : 1) (vac)
d11/d11:C70 (1 : 1)/C70 14.68
d12/d12:C70 (1 : 1)/C70 12.1
6.32
d13:PC61BM (1 : 2)
2.33
d14/C60
4.10
d15:PC61BM (1 : 3)
1.97
d16/C60
3.65
d17/C60
d18/C60
4.59
1.7
d19/C60
d20:PC61BM (1 : 2)
5.30
d21:PC61BM (1 : 2)
5.83
d22:PC71BM (1 : 3)
9.51
5.21
d23:PC71BM (1 : 2)
7.66
d24:PC71BM (1 : 2)
1.66
d25:PC61BM (1 : 3)
d26:PC61BM (1 : 3)
4.18
8.58
d27:PC71BM (1 : 3)
0.76
0.79
0.74
0.93
0.91
0.92
0.71
0.79
0.97
0.83
0.79
0.95
0.67
0.48
0.66
0.72
0.89
1.15
0.67
0.87
1.07
0.87
0.84
0.88
0.89
0.81
0.85
0.33
0.375
0.34
0.41
0.437
0.41
0.38
0.44
0.33
0.48
0.50
0.56
0.29
0.41
0.30
0.34
0.36
0.28
0.3
0.39
0.31
0.52
0.308
0.439
0.41
0.39
0.327
151
152
152
154
155
156
159
159
160
161
162
13
163
165
165
165
165
167
168
169
169
170
171
171
172
173
174
a
In lm. b O and S: measured by OFET or SCLC method, N and B: in neat or blend lm. c From electrochemistry unless stated otherwise,
U: from UPS. d Donor/acceptor: bilayer by vacuum deposition; donor:acceptor: blend by solution process unless stated otherwise; vac: vacuum
deposition. e AM1.5, 100 mW cm2 unless stated otherwise. f 85 mW cm2. g 90 mW cm2. h 80 mW cm2. i 95 mW cm2.
View Online
Fig. 5
This journal is
View Online
higher than that of the devices based on d25 or the corresponding linear molecule. The result indicates that the three
dimensional, star-shaped structure may be benecial to improving
the photovoltaic performance compared to its linear counterpart.
Subsequently, PCE of the devices was further improved to
2.39% by using PC71BM as an electron acceptor and replacing
the terminal group of vinyl-TPA in d26 with 4-hexylthiophene
(d27).174
In materials based on TPA and its analogs, the DAA
structure (e.g., d11 and d12) showed amazing results in PMHJ
OPVs, with PCEs up to 6.4%. Meanwhile, the three-dimensional
pullpush materials based on TPA as core (e.g., d22) also gave
high performance in solution-processed BHJ OPVs with PCEs
up to 4.3%. These results suggest that combining multi
electron-withdrawing units with TPA core to form threedimensional DAA structure may be one good direction
for developing high performance OPV materials.
View Online
Table 5
Optical and electronic properties, mobilities, and OPV performance of fullerene-based acceptors
mea/cm2 V1 s1
e1
e2
e5
e6
e7
e8
e9
e10
e11
e12
e13
LUMOb/eV
Active layerc
JSC/mA cm2
VOC/V
FF
PCEd (%)
Ref.
3.9
3.9
3.7
3.74
3.72
3.85
3.66
3.63
3.74
3.75
ZnPc:e1 (vac, 1 : 2)
ZnPc:e2 (vac, 1 : 2)
P3HT:e5 (1 : 1.2)
P3HT:e6 (1 : 1)
P3HT:e7 (1 : 1)
P3HT:e8 (1 : 1.2)
P3HT:e9 (1 : 0.6)
P3HT:e10 (1 : 1)
BP/BP:e11/e11
P3HT:e12 (1 : 1)
P3HT:e13 (55 : 45)
7.52
9.88
9.14
10.61
10.79
9.05
10.3
8.64
10.5
10.3
11.3
0.56
0.56
0.724
0.84
0.86
0.87
0.83
0.81
0.75
0.81
0.65
0.543
0.522
0.68
0.727
0.721
0.655
0.62
0.61
0.65
0.63
0.57
2.27
2.87
4.5
6.48
6.69
5.2
5.3
4.2
5.2
5.25
4.2
176
176
188
190
192
193
195
199
200
201
202
a
O and S: measured by OFET or SCLC method, N and B: in neat or blend lm. b From electrochemistry. c donor:acceptor: blend by solution
process unless stated otherwise; vac: vacuum deposition. d AM1.5, 100 mW cm2.
View Online
View Online
Table 6
Optical and electronic properties, mobilities, and OPV performance of rylene diimide-based acceptors
Egopt/eV meb/cm2 V1 s1 HOMOc/LUMO/eV Active layerd
lmaxa/nm
f1
f2
f3 530
f4 542
f5
f6
f7
f8 455
f9
f10
5.8/3.8
5.82/3.69
2.13
2.13
8.8 104
5.6 104
4.6 104
6.0/3.85
5.9/3.8
5.90/3.95
5.78/3.87
5.5/4.1
ZnPc/f1
CuPc/f2
P3HT:f3 (1 : 4)
P3HT:f4 (1 : 4)
P3HT:f5 (1 : 1)
X:f6 (1 : 1)
Y:f7(1 : 3.5)
Z:f8 (1 : 1)
ZnPc/f9
P3HT/P3HT:f10 (1 : 1)/f10
a
In lm. b Measured by SCLC method in blend lm. c From electrochemistry.
blend by solution process. e AM1.5, 100 mW cm2. f 94 mW cm2.
PCEe(%) Ref.
3.66
1.65
1.32
1.74
6.8
6.3
8.30
2.11
3.51
1.3
0.93f
0.25
0.182
0.50
2.85
3.17
3.88
0.54
1.50
0.45
0.36
0.75
0.88
0.95
0.90
0.50
0.82
0.34
0.38
0.38
0.47
0.53
0.52
0.51
0.52
207
208
209
211
212
213
214
215
216
217
View Online
g1
g17
g18
g19
g20
g21
Optical and electronic properties, mobilities, and OPV performance of other nonfullerene-based acceptors
lmaxa/nm
Egopt/eV
780
1.5
HOMOc/LUMO/eV
6.4/4.9
g2
g3
g4
g5
g6
g7
g8
g9
g10
g11
g12
g13
g14
g15
g16
700
5.7/3.95
5.29/3.50
5.47/3.64
620
5.34/3.21
710
1.82
490
640
475
1.8
2.40
580
410
517
2.34
1.81
1.81
2.18
3
3 10
(O)
6.27/3.92
5.47/3.42
5.9/4.1
6.2/3.6
6.02/3.50
6.0/3.6
5.77/3.35
5.26/3.52
5.9/4.09
6.1/3.5
5.17/3.24
Active layerd
JSC/mA cm2
VOC/V
FF
p-6P/g1
SubPc/g1
SubPc/g2
SubPc/g3
SubPc/g4
P3HT:g5 (1 : 1)
P3HT:g6 (1 : 1)
P3HT:g7 (1 : 1)
P3HT:g8 (1 : 1)
P3HT:g9 (5 : 3)
P3HT:g10 (1 : 1)
P3HT:g11 (1 : 1)
P3HT:g12 (1 : 1)
P3HT:g13 (1 : 1)
P3HT:g14 (1 : 2)
P3HT:g15 (1 : 1)
P3HT:g16 (1 : 1)
POPT:g16 (1 : 1)
P3HT:g17 (1 : 1.4)
P3HT:g18 (1 : 2)
P3HT:g19 (1 : 1)
P3HT:g20 (1 : 2)
P3HT:g21 (1.5 : 1)
0.96
2.54
2.1
3.53
7.8
3.72
1.93
2.44
3.17
1.93
0.24
0.42
0.40
0.94
1.31
0.95
0.84
0.54
0.95
0.80
1.05
0.93
0.55
0.49
0.58
0.54
0.41
0.41
0.43
0.50
0.39
0.21
0.66
5.72
2.36
1.79
3.00
5.50
4.7
2.36
1.93
4.40
3.9
0.78
0.48
0.62
0.67
0.76
0.62
0.96
0.71
0.52
0.76
1.1
0.27
0.57
0.50
0.37
0.48
0.40
0.56
0.52
0.31
0.56
0.4
In lm. b O and S: measured by OFET or SCLC method in neat lm. c From electrochemistry.
donor:acceptor: blend by solution process. e AM1.5, 100 mW cm2. f 80 mW cm2.
PCEe (%)
Ref.
0.18
0.56
0.96
2.68
4.0
1.29
0.43
1.00
1.26
0.80
0.06f
0.30.4f
0.14
1.57
0.73
0.45
1.10
1.40
2.54
1.00
0.31
1.86
1.7
222
223
224
225
226
228
227
228
228
229
232
233
235
236
237
240
241
241
244
245
246
247
248
This journal is
View Online
improved performance; SubPc/g3-based device showed promising PCEs of 2.68% with very high VOC of 1.31 V.225 After
selective halogenation to tune the energy levels of SubPc, g3
provided sucient interfacial HOMO and LUMO osets for
ecient exciton dissociation, whilst maximizing the interface
gap. Recently, Verreet et al. reported uorinated fused SubPc
This journal is
dimer (g4, mixture of two isomers) with strong and complementary absorption to the donor material SubPc.226 The
optimized SubPc/g4-based bilayer device exhibited a high
PCE of 4%, with JSC of 7.8 mA cm2, VOC of 0.95 V, and
FF of 0.54. The PCE of 4% is the highest ever reported for
nonfullerene-based bilayer OPVs.
Chem. Soc. Rev.
View Online
View Online
This journal is
View Online
View Online
Acknowledgements
This work was supported by NSFC (Grants 21025418,
51011130028, 21021091), 973 Project (Grant 2011CB808400),
and the Chinese Academy of Sciences.
References
1 C. W. Tang, Appl. Phys. Lett., 1986, 48, 183.
2 G. Yu, J. Gao, J. C. Hummelen, F. Wudl and A. J. Heeger,
Science, 1995, 270, 1789.
3 G. A. Chamberlain, Sol. Cells, 1983, 8, 47.
4 R. R. Lunt, N. C. Giebink, A. A. Belak, J. B. Benziger and
S. R. Forrest, J. Appl. Phys., 2009, 105, 053711.
5 M. Hiramoto, H. Fujiwara and M. Yokoyama, Appl. Phys. Lett.,
1991, 58, 1062.
6 J. G. Xue, B. P. Rand, S. Uchida and S. R. Forrest, Adv. Mater.,
2005, 17, 66.
7 N. S. Sariciftci, L. Smilowitz, A. J. Heeger and F. Wudl, Science,
1992, 258, 1474.
8 J. J. M. Halls, C. A. Walsh, N. C. Greenham, E. A. Marseglia and
R. H. Friend, Nature, 1995, 376, 498.
9 C. J. Brabec, N. S. Sariciftci and J. C. Hummelen, Adv. Funct.
Mater., 2001, 11, 15.
10 Z. He, C. Zhong, X. Huang, W.-Y. Wong, H. Wu, L. Chen, S. Su
and Y. Cao, Adv. Mater., 2011, 23, 4636.
11 X.-H. Zhu, J. Peng, Y. Cao and J. Roncali, Chem. Soc. Rev.,
2011, 40, 3509.
12 V. Steinmann, N. M. Kronenberg, M. R. Lenze, S. M. Graf,
D. Hertel, K. Meerholz, H. Burckstummer, E. V. Tulyakova and
F. Wurthner, Adv. Energy Mater., 2011, 1, 888.
13 S.-W. Chiu, L.-Y. Lin, H.-W. Lin, Y.-H. Liu, Z.-Y. Huang,
Y.-T. Lin, F. Lin, Y.-H. Chen and K.-T. Wong, Chem. Commun.,
2012, 48, 1857.
14 Z. Li, G. He, X. Wan, Y. Liu, J. Zhou, G. Long, Y. Zuo,
M. Zhang and Y. Chen, Adv. Energy Mater., 2012, 2, 74.
This journal is
View Online
61 R. F. Bailey-Salzman, B. P. Rand and S. R. Forrest, Appl. Phys.
Lett., 2007, 91, 013508.
62 M. Brumbach, D. Placencia and N. R. Armstrong, J. Phys. Chem.
C, 2008, 112, 3142.
63 D. Placencia, W. Wang, R. C. Shallcross, K. W. Nebesny,
M. Brumbach and N. R. Armstrong, Adv. Funct. Mater., 2009,
19, 1913.
64 K. Petritsch, J. J. Dittmer, E. A. Marseglia, R. H. Friend, A. Lux,
G. G. Rozenberg, S. C. Moratti and A. B. Holmes, Sol. Energy
Mater. Sol. Cells, 2000, 61, 63.
65 A. Varotto, C.-Y. Nam, I. Radivojevic, J. P. C. Tome, J. A. S.
Cavaleiro, C. T. Black and C. M. Drain, J. Am. Chem. Soc., 2010,
132, 2552.
66 C. J. Brabec, A. Cravino, D. Meissner, N. S. Sariciftci,
T. Fromherz, M. T. Rispens, L. Sanchez and J. C. Hummelen,
Adv. Funct. Mater., 2001, 11, 374.
67 K. L. Mutolo, E. I. Mayo, B. P. Rand, S. R. Forrest and
M. E. Thompson, J. Am. Chem. Soc., 2006, 128, 8108.
68 H. Gommans, D. Cheyns, T. Aernouts, C. Girotto, J. Poortmans
and P. Heremans, Adv. Funct. Mater., 2007, 17, 2653.
69 B. Ma, C. H. Woo, Y. Miyamoto and J. M. J. Frechet, Chem.
Mater., 2009, 21, 1413.
70 B. Verreet, S. Schols, D. Cheyns, B. P. Rand, H. Gommans,
T. Aernouts, P. Heremans and J. Genoe, J. Mater. Chem., 2009,
19, 5295.
71 G. Mart n, G. Rojo, F. Agullo-Lopez, V. R. Ferro, J. M. Garc a
de la Vega, M. V. Mart nez-D az, T. Torres, I. Ledoux and
J. Zyss, J. Phys. Chem. B, 2002, 106, 13139.
72 N. M. Kronenberg, M. Deppisch, F. Wurthner, H. W. A. Lademann,
K. Deing and K. Meerholz, Chem. Commun., 2008, 6489.
73 H. Burckstummer, N. M. Kronenberg, M. Gsanger, M. Stolte,
K. Meerholz and F. Wurthner, J. Mater. Chem., 2010, 20, 240.
74 N. M. Kronenberg, V. Steinmann, H. Burckstummer, J. Hwang,
D. Hertel, F. Wurthner and K. Meerholz, Adv. Mater., 2010,
22, 4193.
75 H. Burckstummer, E. V. Tulyakova, M. Deppisch, M. R. Lenze,
N. M. Kronenberg, M. Gsanger, M. Stolte, K. Meerholz and
F. Wurthner, Angew. Chem., Int. Ed., 2011, 50, 11628.
76 A. Ojala, H. Burckstummer, M. Stolte, R. Sens, H. Reichelt,
P. Erk, J. Hwang, D. Hertel, K. Meerholz and F. Wurthner,
Adv. Mater., 2011, 23, 5398.
77 V. Steinmann, N. M. Kronenberg, M. R. Lenze, S. M. Graf,
D. Hertel, H. Burckstuemmer, F. Wurthner and K. Meerholz,
Appl. Phys. Lett., 2011, 99, 193306.
78 A. Ojala, A. Petersen, A. Fuchs, R. Lovrincic, C. Polking,
J. Trollmann, J. Hwang, C. Lennartz, H. Reichelt, H. W. Hoken,
A. Pucci, P. Erk, T. Kirchartz and F. Wurthner, Adv. Funct. Mater.,
2012, 22, 86.
79 F. Silvestri, M. D. Irwin, L. Beverina, A. Facchetti, G. A. Pagani
and T. J. Marks, J. Am. Chem. Soc., 2008, 130, 17640.
80 D. Bagnis, L. Beverina, H. Huang, F. Silvestri, Y. Yao, H. Yan,
G. A. Pagani, T. J. Marks and A. Facchetti, J. Am. Chem. Soc.,
2010, 132, 4074.
81 U. Mayerhoer, K. Deing, K. Gru, H. Braunschweig, K. Meerholz
and F. Wurthner, Angew. Chem., Int. Ed., 2009, 48, 8776.
82 S. Wang, E. I. Mayo, M. D. Perez, L. Grie, G. Wei,
P. I. Djurovich, S. R. Forrest and M. E. Thompson, Appl. Phys.
Lett., 2009, 94, 233304.
83 G. Wei, S. Wang, K. Renshaw, M. E. Thompson and
S. R. Forrest, ACS Nano, 2010, 4, 1927.
84 G. Wei, S. Wang, K. Sun, M. E. Thompson and S. R. Forrest,
Adv. Energy Mater., 2011, 1, 184.
85 S. Wang, L. Hall, V. V. Diev, R. Haiges, G. Wei, X. Xiao,
P. I. Djurovich, S. R. Forrest and M. E. Thompson, Chem.
Mater., 2011, 23, 4789.
86 G. Wei, X. Xiao, S. Wang, J. D. Zimmerman, K. Sun, V. V. Diev,
M. E. Thompson and S. R. Forrest, Nano Lett., 2011, 11, 4261.
87 K. Y. Law, J. Phys. Chem., 1987, 91, 5184.
88 T. Rousseau, A. Cravino, T. Bura, G. Ulrich, R. Ziessel and
J. Roncali, Chem. Commun., 2009, 1673.
89 T. Rousseau, A. Cravino, T. Bura, G. Ulrich, R. Ziessel and
J. Roncali, J. Mater. Chem., 2009, 19, 2298.
90 T. Rousseau, A. Cravino, E. Ripaud, P. Leriche, S. Rihn,
A. De Nicola, R. Ziessel and J. Roncali, Chem. Commun., 2010,
46, 5082.
This journal is
View Online
124 R. Fitzner, E. Reinold, A. Mishra, E. Mena-Osteritz, H. Ziehlke,
C. Korner, K. Leo, M. Riede, M. Weil, O. Tsaryova, A. Wei,
C. Uhrich, M. Pfeier and P. Bauerle, Adv. Funct. Mater., 2011,
21, 897.
125 Y. Liu, X. Wan, B. Yin, J. Zhou, G. Long, S. Yin and Y. Chen,
J. Mater. Chem., 2010, 20, 2464.
126 B. Yin, L. Yang, Y. Liu, Y. Chen, Q. Qi, F. Zhang and S. Yin,
Appl. Phys. Lett., 2010, 97, 023303.
127 Y. Liu, X. Wan, F. Wang, J. Zhou, G. Long, J. Tian, J. You,
Y. Yang and Y. Chen, Adv. Energy Mater., 2011, 1, 771.
128 Y. Liu, X. Wan, F. Wang, J. Zhou, G. Long, J. Tian and Y. Chen,
Adv. Mater., 2011, 23, 5387.
129 J. Zhou, X. Wan, Y. Liu, G. Long, F. Wang, Z. Li, Y. Zuo, C. Li
and Y. Chen, Chem. Mater., 2011, 23, 4666.
130 D. Demeter, T. Rousseau, P. Leriche, T. Cauchy, R. Po and
J. Roncali, Adv. Funct. Mater., 2011, 21, 4379.
131 J. Ah Kong, E. Lim, K. K. Lee, S. Lee and S. Hyun Kim,
Sol. Energy Mater. Sol. Cells, 2010, 94, 2057.
132 S. Steinberger, A. Mishra, E. Reinold, C. M. Muller, C. Uhrich,
M. Pfeier and P. Bauerle, Org. Lett., 2010, 13, 90.
133 S. Steinberger, A. Mishra, E. Reinold, J. Levichkov, C. Uhrich,
M. Pfeier and P. Bauerle, Chem. Commun., 2011, 47, 1982.
134 X. Zhao, C. Piliego, B. Kim, D. A. Poulsen, B. Ma, D. A. Unruh
and J. M. J. Frechet, Chem. Mater., 2010, 22, 2325.
135 G. C. Welch, L. A. Perez, C. V. Hoven, Y. Zhang, X.-D. Dang,
A. Sharenko, M. F. Toney, E. J. Kramer, T.-Q. Nguyen and
G. C. Bazan, J. Mater. Chem., 2011, 21, 12700.
136 X. Sun, Y. Zhou, W. Wu, Y. Liu, W. Tian, G. Yu, W. Qiu,
S. Chen and D. Zhu, J. Phys. Chem. B, 2006, 110, 7702.
137 H. Shang, H. Fan, Y. Liu, W. Hu, Y. Li and X. Zhan, J. Mater.
Chem., 2011, 21, 9667.
138 N. Kopidakis, W. J. Mitchell, J. van de Lagemaat, D. S. Ginley,
G. Rumbles, S. E. Shaheen and W. L. Rance, Appl. Phys. Lett.,
2006, 89, 103524.
139 J. Roncali, P. Frere, P. Blanchard, R. de Bettignies, M. Turbiez,
S. Roquet, P. Leriche and Y. Nicolas, Thin Solid Films, 2006,
511, 567.
140 W. L. Rance, B. L. Rupert, W. J. Mitchell, M. E. Kose,
D. S. Ginley, S. E. Shaheen, G. Rumbles and N. Kopidakis,
J. Phys. Chem. C, 2010, 114, 22269.
141 M. E. Kose, W. J. Mitchell, N. Kopidakis, C. H. Chang,
S. E. Shaheen, K. Kim and G. Rumbles, J. Am. Chem. Soc.,
2007, 129, 14257.
142 P. F. Xia, X. J. Feng, J. Lu, S.-W. Tsang, R. Movileanu, Y. Tao
and M. S. Wong, Adv. Mater., 2008, 20, 4810.
143 W. Zhang, S. C. Tse, J. Lu, Y. Tao and M. S. Wong, J. Mater.
Chem., 2010, 20, 2182.
144 H. M. Ko, H. Choi, S. Paek, K. Kim, K. Song, J. K. Lee and
J. Ko, J. Mater. Chem., 2011, 21, 7248.
145 W. Zhang, G. M. Ng, H. L. Tam, M. S. Wong and F. Zhu,
J. Polym. Sci., Part A: Polym. Chem., 2011, 49, 1865.
146 C.-Q. Ma, E. Mena-Osteritz, T. Debaerdemaeker, M. M. Wienk,
R. A. J. Janssen and P. Bauerle, Angew. Chem., Int. Ed., 2007,
46, 1679.
147 C.-Q. Ma, M. Fonrodona, M. C. Schikora, M. M. Wienk, R. A. J.
Janssen and P. Bauerle, Adv. Funct. Mater., 2008, 18, 3323.
148 S. Roquet, R. de Bettignies, P. Leriche, A. Cravino and
J. Roncali, J. Mater. Chem., 2006, 16, 3040.
149 S. Karpe, A. Cravino, P. Fre`re, M. Allain, G. Mabon and
J. Roncali, Adv. Funct. Mater., 2007, 17, 1163.
150 Z. Ning and H. Tian, Chem. Commun., 2009, 5483.
151 C. He, Q. He, Y. He, Y. Li, F. Bai, C. Yang, Y. Ding, L. Wang
and J. Ye, Sol. Energy Mater. Sol. Cells, 2006, 90, 1815.
152 D. Deng, Y. Yang, J. Zhang, C. He, M. Zhang, Z.-G. Zhang,
Z. Zhang and Y. Li, Org. Electron., 2011, 12, 614.
153 H. Shang, H. Fan, Q. Shi, S. Li, Y. Li and X. Zhan, Sol. Energy
Mater. Sol. Cells, 2010, 94, 457.
154 H. Fan, H. Shang, Y. Li and X. Zhan, Appl. Phys. Lett., 2010,
97, 133302.
155 Q. Shi, P. Cheng, Y. Li and X. Zhan, Adv. Energy Mater., 2012,
2, 63.
156 W. Li, C. Du, F. Li, Y. Zhou, M. Fahlman, Z. Bo and F. Zhang,
Chem. Mater., 2009, 21, 5327.
157 C. He, Q. He, X. Yang, G. Wu, C. Yang, F. Bai, Z. Shuai,
L. Wang and Y. Li, J. Phys. Chem. C, 2007, 111, 8661.
This journal is
View Online
194 E. Voroshazi, K. Vasseur, T. Aernouts, P. Heremans, A. Baumann,
C. Deibel, X. Xue, A. J. Herring, A. J. Athans, T. A. Lada,
H. Richter and B. P. Rand, J. Mater. Chem., 2011, 21, 17345.
195 K.-H. Kim, H. Kang, S. Y. Nam, J. Jung, P. S. Kim, C.-H. Cho,
C. Lee, S. C. Yoon and B. J. Kim, Chem. Mater., 2011, 23, 5090.
196 X. Meng, W. Zhang, Z. a. Tan, C. Du, C. Li, Z. Bo, Y. Li,
X. Yang, M. Zhen, F. Jiang, J. Zheng, T. Wang, L. Jiang, C. Shu
and C. Wang, Chem. Commun., 2012, 48, 425.
197 J. M. Campanera, C. Bo, M. M. Olmstead, A. L. Balch and
J. M. Poblet, J. Phys. Chem. A, 2002, 106, 12356.
198 C. M. Cardona, B. Elliott and L. Echegoyen, J. Am. Chem. Soc.,
2006, 128, 6480.
199 R. B. Ross, C. M. Cardona, D. M. Guldi, S. G. Sankaranarayanan,
M. O. Reese, N. Kopidakis, J. Peet, B. Walker, G. C. Bazan,
E. Van Keuren, B. C. Holloway and M. Drees, Nat. Mater., 2009,
8, 208.
200 Y. Matsuo, Y. Sato, T. Niinomi, I. Soga, H. Tanaka and
E. Nakamura, J. Am. Chem. Soc., 2009, 131, 16048.
201 J. A. Mikroyannidis, A. N. Kabanakis, S. S. Sharma and
G. D. Sharma, Adv. Funct. Mater., 2011, 21, 746.
202 S. A. Backer, K. Sivula, D. F. Kavulak and J. M. J. Frechet,
Chem. Mater., 2007, 19, 2927.
203 X. Zhan, A. Facchetti, S. Barlow, T. J. Marks, M. A. Ratner,
M. R. Wasielewski and S. R. Marder, Adv. Mater., 2011, 23, 268.
204 F. Wurthner, Chem. Commun., 2004, 1564.
205 F. Wurthner and M. Stolte, Chem. Commun., 2011, 47, 5109.
206 S. V. Bhosale, C. H. Jani and S. J. Langford, Chem. Soc. Rev.,
2008, 37, 331.
207 S. Erten, F. Meghdadi, S. Gunes, R. Koeppe, N. S. Sariciftci and
S. Icli, Eur. Phys. J.: Appl. Phys., 2006, 36, 225.
208 S. B. Rim, R. F. Fink, J. C. Schoneboom, P. Erk and P. Peumans,
Appl. Phys. Lett., 2007, 91, 173504.
209 X. Y. Guo, L. J. Bu, Y. Zhao, Z. Y. Xie, Y. H. Geng and
L. X. Wang, Thin Solid Films, 2009, 517, 4654.
210 J. L. Li, F. Dierschke, J. S. Wu, A. C. Grimsdale and K. Mullen,
J. Mater. Chem., 2006, 16, 96.
211 W. S. Shin, H.-H. Jeong, M.-K. Kim, S.-H. Jin, M.-R. Kim,
J.-K. Lee, J. W. Lee and Y.-S. Gal, J. Mater. Chem., 2006,
16, 384.
212 V. Kamm, G. Battagliarin, I. A. Howard, W. Pisula,
A. Mavrinskiy, C. Li, K. Mullen and F. Laquai, Adv. Energy
Mater., 2011, 1, 297.
213 G. D. Sharma, P. Balraju, J. A. Mikroyannidis and M. M.
Stylianakis, Sol. Energy Mater. Sol. Cells, 2009, 93, 2025.
214 G. D. Sharma, P. Suresh, J. A. Mikroyannidis and M. M.
Stylianakis, J. Mater. Chem., 2010, 20, 561.
215 J. A. Mikroyannidis, P. Suresh and G. D. Sharma, Synth. Met.,
2010, 160, 932.
216 S. Erten and S. Icli, Inorg. Chim. Acta, 2008, 361, 595.
217 G. Ren, E. Ahmed and S. A. Jenekhe, Adv. Energy Mater., 2011,
1, 946.
218 E. Ahmed, G. Ren, F. S. Kim, E. C. Hollenbeck and
S. A. Jenekhe, Chem. Mater., 2011, 23, 4563.
219 M. L. Tang, J. H. Oh, A. D. Reichardt and Z. Bao, J. Am. Chem.
Soc., 2009, 131, 3733.
220 Z. Bao, A. J. Lovinger and J. Brown, J. Am. Chem. Soc., 1998,
120, 207.
221 S. P. Singh, A. Sellinger and A. Dodabalapur, J. Appl. Phys.,
2010, 107, 044509.
222 X. Jiang, J. Dai, H. Wang, Y. Geng and D. Yan, Chem. Phys.
Lett., 2007, 446, 329.
223 J. L. Yang, S. Schumann, R. A. Hatton and T. S. Jones, Org.
Electron., 2010, 11, 1399.
224 H. Gommans, T. Aernouts, B. Verreet, P. Heremans, A. Medina,
C. G. Claessens and T. Torres, Adv. Funct. Mater., 2009, 19, 3435.
This journal is