NationalInstituteofTechnology,Calicut

DepartmentofElectronicsandCommunicationEngineering
MonsoonSemester2015
EC6227:LowPowerVLSIdesign
Submission:Noneedtosubmit
2
2
Assumen=210cm /Vsandp=70cm /Vsforholes.Tox=20nm,|VT0|=0.4V.VDD=1.8V.
Questions
1)AMOSFETisfabricatedusinganntypesubstrate.Theoxidelayeris20nm.Thegateisdopedptype
20

with10 cm .Whentheappliedgatevoltageis(a)0.3V(b)0.6V(c)1.8V,calculatethedraincurrent.
AssumeWtobe10mandLtobe1m.
2)MOSFETasinproblem(1)isusedforadynamicthresholdvoltageapplications.Thecircuitrequire
mentsdemandathresholdvoltage0.2Vlessthanthatofoffstatethresholdvoltagevalue.Calculatethe
substratebias.
3)IfaMOSFETisscaleddownbyafactork,howthefollowingvaluesofadevicegetaffected?Assume
constantfieldscaling,constantvoltagescalingandgeneralizedscaling.
(a)Oncurrent(b)subthresholdslope(c)powerconsumption(d)cutofffrequency
4)Transconductanceanddrainconductancearetwoimportantdeviceparameters.Whatistheirsignifi
cance?CalculatetransconductanceanddrainconductanceoftheMOSFETconsideredinproblem(2).
5)Drawandexplainhowthebodyeffectcoefficientvarieswithsubstratebias?
6)ThecapacitancevoltagecharacteristicsofaMOScapacitorareshowninfig.1.Thepowersupplyvolt
age is 3V. Estimate the saturation drain voltage, maximum drain current, transconductance and drain
current at maximum possible bias condition. What is the difference if one includes channel length
modulation?Assumeachannellengthmodulationof0.25V1.

1
W
2
I D , sat n Cox VGS VTH 1 VDS VD , sat
L
2

(1)

0.5

7)IftheMOSFETinproblem7hasabodybiaseffectof0.5V ,calculatethecurrentwhenabiasofVDD
15

isapplied.Thebodydopingconcentrationis10 cm and0.5Vsourcetobulkbiasisapplied.Assume
thatthechannellengthmodulationiszero.

VTH 0

2qN A Si
Cox

2B VSB 2B VTH 0

2B VSB 2B

(2)

8)WhathappenstotheMOSFETcurrentwhenbothchannellengthmodulationandbodybiaseffectare
happeningsimultaneously?
9)Canoneusebodybiaseffecttocompensateforchannellengthmodulation?

Fig.1:Figureforproblem6.
10)ConsidernMOSFETfabricatedin180nmtechnologynode.Duetoprocessvariations,channellength
canvaryby5%.Thresholdvoltagevariationduetochannellengthvariationis8mV/nm.DIBLisestimat
edtobe40mV/V.Ignorediodeleakages.Answerthefollowingquestions:
(i)WhatarethebestcaseandworstcaseIon/Ioffratios?
(ii)AssumethatyoucanapplybodybiastoreducetheoffcurrentsothattheworstcaseIon/Ioffratioap
proachesbestcaseratio.Whatisthesignandmagnitudeofthebodybiasthatcanbeapplied?
(iii)AssumethatyoucanapplybodybiastoincreasetheONcurrentsothattheworstcaseIon/Ioffratio
approachesbestcaseratio.Whatisthesignandmagnitudeofthebodybiasthatcanbeapplied?Com
mentonyouranswer.
5

11)ConsidertheMOSFETinproblem10.Itisestimatedthatthediodecurrentincreasesbyafactore
perunitchangeinreversebiasvoltage.AssumethatthedrainisbiasedatVDD,gateat0.1V.Calculate
theoffcurrentwhensubstratebiasis0Vandsubstratebiasis1V(reverse).

END