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AS/MAC 2015/CHM474

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AS/MAC 2015/CHM474

UNIVERSITI TEKNOLOGI MARA

TEST 2

COURSE

INORGANIC CHEMISTRY I

COURSE CODE

CHM474

TIME

1 HOUR

NAME

MATRIC. NO.

PROGRAM

INSTRUCTIONS TO CANDIDATES
1.

This question paper consist of four (4) questions.

2.

Answer ALL questions in the space provided.

3.

Do not bring any material into the examination room unless permission is given by
the invigilator.

DO NOT TURN THIS PAGE UNTIL YOU ARE TOLD TO DO SO

This examination paper consists of 6 printed pages
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AS/MAC 2015/CHM474

Question 1
a)

Barium sulfide, BaS, crystallizes with the rock salt structure. The ionic radius of Ba 2+
and S2- are 135 pm and 184 pm respectively.
i)

Draw the unit cell of BaS and label the position of the anions and cations.

(2 marks)
ii)

Determine the volume (cm3) and density of BaS (g/cm3).

(R.A.M. of Ba = 137.3 g/mol ; R.A.M. of S = 32.07 g/mol)

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(3 marks)

b)

Metal X crystallizes with a body centered cubic structure. The atomic radius of
metal X is 1.3 x 10-8 cm.
i)

What is the coordination number of X in the structure?

(1 mark)
ii)

Calculate the edge length of the unit cell for metal X in pm.

(1 mark)
c)

Graphite and diamond are both allotropes of carbon. Differentiate the conducting
ability of graphite and diamond based on their structure.

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(3 marks)

Question 2
Defects or imperfections have a great effect on the properties and performance of solid
materials.
a)

Identify the type of defects in sodium chloride, NaCl, and wustite, FeO.

(2 marks)
b)

Describe briefly the formation of the defects in 2 (a).

(2 marks)
c)

The Schottky defects and Frenkel defects are examples of point defects that can
occur in ionic solid. Compare and explain their effect on the density of a crystal.

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(3 marks)

Question 3
Solids can be classified according to their electrical conductivity. Explain the difference
between conductors, insulators and semiconductors based on the band theory of solids.

(5 marks)
Question 4
a)

Define the following terms

i)

Intrinsic semiconductors

ii)

Interstitial impurities

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(2 marks)

b)

Extrinsic semiconductors can be categorized as n-type semiconductors or p-type

semiconductors. Using an appropriate example, illustrate the formation of an n-type
and a p-type semiconductor.

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(6 marks)
END OF QUESTION PAPER
ANSWER SCHEME
QUESTION 1
a)

i)

Structure - 1 mark, Labellling - 1 mark

ii)

- mark
- mark
- mark

- mark

- mark

-
mark
b)

i)

- 1 mark

ii)
- mark
- mark
c)

In graphite, each carbon atom is covalently bonded to three other carbon atoms, leaving an
electron unpaired.
- mark
Unpaired electrons form a delocalized plane in between each carbon layers.
- mark
These electrons move freely and allows electrical conductivity in graphite.
- mark
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AS/MAC 2015/CHM474
However, conductivity in graphite is only restricted within this plane.
- mark
In a diamond, each carbon atom is bonded to four other carbons in a tetrahedron. - mark
There are no free electrons in the crystal structure and therefore diamond does not conduct
electricity.
- mark
Question 2
a)

In sodium chloride Schottky defect

In wustite Non-stoichiometric defect

- 1 mark
- 1 mark

b)

Schottky defect is formed due to vacancies in the crystal structure that is created by transfer
of atom/ion from its original site to the surface of the crystal. In NaCl, an equal number of
both Na+ and Cl- leave their original sites, creating vacancies in the NaCl crystal structure.
- 1 mark

Non stoichiometric defect is formed due to vacancies in the crystal lattice and presence of
extra interstitial atoms that produce compounds with indefinite proportions. In FeO, the iron
lattices contain vacancies, resulting in an excess of oxygens in the FeO crystal structure.
- 1 mark
c)

The density of an ionic solid is affected by Schottky defect, but not by Frenkel defect. - 1 mark
In Schottky defect, an equal numbers of cations and anions leave their sites and create
vacancies within the crystal structure. The decrease in the number of ions in the crystal
structure will cause the density of the ionic solid to be lowered.
- 1 mark
In Frenkel defect, cations move from their original sites to an interstitial site in the crystal
structure. There is no difference in the number of ions in the structure and therefore the
density of the solid remains the same.
- 1 mark

Question 3
Based on the band theory of solids, the conducting ability of a solid material depends on the energy
gap, or the band gap, between the valence band and the conduction band.
- mark
In conductors, the valence band and the conduction band overlapped each other.
- mark
Electrons from the valence band are easily excited to the conduction band even with a small supply of
electrical field.
- mark
When temperature increases, electrical conductivity will decrease due to disruption of electron flows
that are caused by atomic vibration at high temperatures.
- mark
In insulators, there is a large gap between the valence band and the conduction band.
- mark
More energy is required to excite electrons from the valence band to the conduction band.
-
mark
At ordinary temperatures, insulators are therefore ineffective electrical conductors.
- mark
In semiconductors, the gap between the valence band and the conduction band is small
- mark
At room temperature, there is not enough energy to excite electrons from the valence band to the
conduction band. Therefore, semiconductors do not conduct electricity at room temperature.- mark
When temperature increases, electrons in the valence band are thermally excited and possess
enough energy to excite to the conduction band. Semiconductors are therefore able to conduct
electricity at finite temperatures.
- mark
Question 4
a)

i)

Intrinsic semiconductors are semiconductors that does not contain impurities as well
as act as insulators at 0 K and as conductors at finite temperatures.
- 1 mark
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ii)

b)

AS/MAC 2015/CHM474
Interstitial impurities are atoms that occupy the voids or interstices of a host crystal
structure and have a smaller diameter compared to the host atoms.
- 1 mark

In n type semiconductors, electrons are the majority carriers while holes are the minority
carriers.
- mark
The impurity atoms donate free electrons to the host crystal and are called donors.
-

mark
n type semiconductors can be formed by doping Silicon with elements from group VA, for
example phosphorus.
- mark
Phosphorus have five valence electrons and will form four covalent bonds with neighboring
Silicon atoms. The fifth valence electron of Phosphorus is not involved in the covalent
bonding and therefore is a free electron.
- mark
The free electrons from Phosphorus will act as majority carriers and will drift to produce
electric current when voltage is applied.
- mark

- mark
In p type semiconductors, holes are the majority carriers while electrons are the minority
carriers.
- mark
The impurity atoms accept electrons from the host crystal and are called acceptors - mark
p type semiconductors can be formed by doping Silicon with elements from group IIIA, for
example boron.
- mark
Boron have three valence electrons and will form three covalent bonds with neighboring
Silicon atoms. There are not enough electrons to form the fourth covalent bond and as a
result, holes will be present in the structure.
- mark
The holes will act as majority carriers and will drift to produce electric current when voltage is
applied.
- mark

- mark

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