D44H8

NZT44H8
C

E
C

TO-220

SOT-223

NPN Power Amplifier

This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4Q.

Absolute Maximum Ratings*

Symbol

TA = 25C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

IC

Collector Current - Continuous

TJ, Tstg

Operating and Storage Junction Temperature Range

Value

Units

60

8.0

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD

TA = 25C unless otherwise noted

Characteristic

RJC

Total Device Dissipation

Derate above 25C
Thermal Resistance, Junction to Case

RJA

Thermal Resistance, Junction to Ambient

Max
D44H8
60
480
2.1
62.5

83.3

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm .
2

1997 Fairchild Semiconductor Corporation

Units
*NZT44H8
1.5
12

W
mW/C
C/W
C/W

D44H8 / NZT44H8

Discrete POWER & Signal

Technologies

(continued)

Electrical Characteristics
Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO

Collector-Emitter Breakdown Voltage*

I C = 100 mA, IB = 0

ICBO

Collector-Cutoff Current

VCB = 60 V, IE = 0

60
10

IEBO

Emitter-Cutoff Current

VEB = 5.0 V, IC = 0

100

1.0

1.5

0.65

ON CHARACTERISTICS
60
40

hFE

DC Current Gain

VCE(sat )

Collector-Emitter Saturation Voltage

I C = 2.0 A, VCE = 1.0 V

I C = 4.0 A, VCE = 1.0 V
I C = 8.0 A, IB = 0.4 A

VBE( sat)

Base-Emitter On Voltage

I C = 8.0 A, IB = 0.8 A

VBE( on)

Base-Emitter On Voltage

I C = 10 mA, VCE = 2.0 V

0.52

I C = 500 mA, VCE = 10 V,

50

SMALL SIGNAL CHARACTERISTICS

Current Gain - Bandwidth Product

fT

MHz

Typical Pulsed Current Gain

vs Collector Current
200
125 C

Vce = 5V

150
100

25 C

50
- 40 C

0
0.01 0.02

0.05 0.1 0.2

0.5 1
2
I C - COLLECTOR CURRENT (A)

10

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

DC Typical Characteristics

Collector-Emitter Saturation
Voltage vs Collector Current
0.8
= 10
0.6

0.4
- 40 C

0.2

25 C
125 C

0
0.1

1
I C - COLLECTOR CURRENT (A)
P 4Q

10

D44H8 / NZT44H8

NPN Power Amplifier

(continued)

(continued)

Base-Emitter Saturation
Voltage vs Collector Current

VBE(ON)- BASE-EMITTER ON VOLTAGE (V)

VBESAT- BASE-EMITTER VOLTAGE (V)

DC Typical Characteristics

Base-Emitter ON Voltage vs
Collector Current

1.4

= 10

V CE = 5V

1.2

1.5

- 40 C

125 C

25 C
125 C

0.6

0.5
I

- 40 C

0.8

25 C

0.1

1
- COLLECTOR CURRENT (A)

0.4
0.1

10

1
I C - COLLECTOR CURRENT (A)
Pr4Q

ICBO- COLLECTOR CURRENT (nA)

Collector-Cutoff Current
vs Ambient Temperature
100
V CB = 50V
10

0.1

0.01
25

50
75
100
125
TA - AMBIENT TEMPERATURE ( C)

150

P 4Q

AC Typical Characteristics
Junction Capacitance vs.
Reverse Bias Voltage

Safe Operating Area TO-220

10

D44H8 / NZT44H8

NPN Power Amplifier

(continued)

AC Typical Characteristics

(continued)

Maximum Power Dissipation

vs. Case Temperature

Maximum Power Dissipation

vs. Ambient Temperature

PD - POWER DISSIPATION (W)

POWER DISSIPATION vs
AMBIENT TEMPERATURE
1.5
1.25
1

SOT-223

0.75
0.5
0.25
0

25

50
75
100
o
TEMPERATURE ( C)

125

150

Thermal Response in TO-220 Package

D44H8 / NZT44H8

NPN Power Amplifier