BSS138L, BVSS138L

Power MOSFET
200 mA, 50 V
NChannel SOT23
Typical applications are DCDC converters, power management in
portable and batterypowered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.

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200 mA, 50 V
RDS(on) = 3.5 W

Features

Low Threshold Voltage (VGS(th): 0.5 V1.5 V) Makes it Ideal for

Low Voltage Applications

NChannel
3

Miniature SOT23 Surface Mount Package Saves Board Space

BVSS Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AECQ101

Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant

MAXIMUM RATINGS (TA = 25C unless otherwise noted)

Value

Unit

DraintoSource Voltage

VDSS

50

Vdc

GatetoSource Voltage Continuous

VGS

20

Vdc

mA

SOT23
CASE 318
STYLE 21

Drain Current
Continuous @ TA = 25C
Pulsed Drain Current (tp 10 ms)

ID
IDM

200
800

Total Power Dissipation @ TA = 25C

PD

225

mW

Operating and Storage Temperature

Range

TJ, Tstg

55 to 150

RqJA

556

C/W

TL

260

Thermal Resistance,
JunctiontoAmbient
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds

MARKING
DIAGRAM

Symbol

Rating

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

J1 M G
G
1

J1
= Device Code
M
= Date Code*
G
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.

ORDERING INFORMATION
Package

Shipping

BSS138LT1G

SOT23
(PbFree)

3000 / Tape & Reel

BVSS138LT1G

SOT23
(PbFree)

3000 / Tape & Reel

BSS138LT3G

SOT23 10,000 / Tape & Reel

(PbFree)

Device

For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2013

July, 2013 Rev. 8

Publication Order Number:

BSS138LT1/D

BSS138L, BVSS138L
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

V(BR)DSS

50

Vdc

0.1
0.5
5.0

OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc, 25C)
(VDS = 50 Vdc, VGS = 0 Vdc, 25C)
(VDS = 50 Vdc, VGS = 0 Vdc, 150C)

IDSS

GateSource Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc)

IGSS

0.1

mAdc

GateSource Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th)

0.5

1.5

Vdc

Static DraintoSource OnResistance

(VGS = 2.75 Vdc, ID < 200 mAdc, TA = 40C to +85C)
(VGS = 5.0 Vdc, ID = 200 mAdc)

rDS(on)

5.6

10
3.5

gfs

100

mmhos

pF

mAdc

ON CHARACTERISTICS (Note 1)

Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)

DYNAMIC CHARACTERISTICS
Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1 MHz)

Ciss

40

50

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1 MHz)

Coss

12

25

Transfer Capacitance

(VDG = 25 Vdc, VGS = 0, f = 1 MHz)

Crss

3.5

5.0

td(on)

20

td(off)

20

SWITCHING CHARACTERISTICS (Note 2)

TurnOn Delay Time
TurnOff Delay Time

(VDD = 30 Vdc, ID = 0.2 Adc,)

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.

2. Switching characteristics are independent of operating junction temperature.

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2

ns

BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
0.8

0.9

VGS = 3.5 V

TJ = 25C

I D , DRAIN CURRENT (AMPS)

I D , DRAIN CURRENT (AMPS)

VGS = 3.25 V

0.6

VGS = 3.0 V

0.5

VGS = 2.75 V

0.4

VGS = 2.5 V

0.3
0.2
0.1
0

VDS = 10 V

0.8

0.7

- 55C

0.7
150C
0.6
0.5
0.4
0.3
0.2
0.1
0

10

1.5

2.5

3.5

4.5

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

Figure 1. OnRegion Characteristics

2.2

1.25
ID = 1.0 mA

2
Vgs(th) , VARIANCE (VOLTS)

VGS = 10 V
ID = 0.8 A

1.8
1.6

VGS = 4.5 V
ID = 0.5 A

1.4
1.2
1

1.125

0.875

0.8
0.6
-55

-5

45

95

0.75
-55

145

-30

-5

45

20

95

70

120

TJ, JUNCTION TEMPERATURE (C)

TJ, JUNCTION TEMPERATURE (C)

Figure 3. OnResistance Variation with

Temperature

Figure 4. Threshold Voltage Variation

with Temperature

145

1.0E-5

10
VDS = 40 V
TJ = 25C

IDSS, DRAIN-TO-SOURCE LEAKAGE (A)

RDS(on) , DRAIN-TO-SOURCE RESISTANCE

(NORMALIZED)

0.5

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

25C

4
ID = 200 mA
2

1.0E-6

150C

125C

1.0E-7

1.0E-8

1.0E-9

0
0

500

1000

1500

2000

2500

3000

QT, TOTAL GATE CHARGE (pC)

10

15

20

25

30

35

40

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5. Gate Charge

Figure 6. IDSS

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3

45

50

BSS138L, BVSS138L

10
VGS = 2.5 V

9
8

150C
7
6
5

25C

4
-55C

3
2
1
0

0.1

0.05

0.2

0.15

0.25

RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)

RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)

TYPICAL ELECTRICAL CHARACTERISTICS

8
VGS = 2.75 V
7

150C

6
5
4
25C

3
2

-55C

1
0

RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)

RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)

VGS = 4.5 V
150C

5
4.5
4
3.5
3

25C

2.5
2

-55C

1.5
1
0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.45

0.4

0.5

4.5
VGS = 10 V

150C

4
3.5
3
2.5

25C

2
-55C

1.5
1
0

0.05

0.1

ID, DRAIN CURRENT (AMPS)

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

ID, DRAIN CURRENT (AMPS)

Figure 10. OnResistance versus Drain

Current

Figure 9. OnResistance versus Drain Current

1
I D , DIODE CURRENT (AMPS)

0.25

Figure 8. OnResistance versus Drain Current

0.2

0.15

ID, DRAIN CURRENT (AMPS)

Figure 7. OnResistance versus Drain Current

5.5

0.1

0.05

ID, DRAIN CURRENT (AMPS)

120
100
TJ = 150C

0.1

25C

-55C
80
60
Ciss

0.01

40
Coss

20
0.001

Crss
0

0.2

0.4

0.6

0.8

1.0

1.2

10

15

VSD, DIODE FORWARD VOLTAGE (VOLTS)

Figure 11. Body Diode Forward Voltage

Figure 12. Capacitance

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4

20

25

BSS138L, BVSS138L
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.

D
SEE VIEW C
3

HE

DIM
A
A1
b
c
D
E
e
L
L1
HE
q

c
1

0.25
q

A
L

A1

MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0

MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64

10

MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0

INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094

MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10

STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN

L1
VIEW C

SOLDERING FOOTPRINT*
0.95
0.037

0.95
0.037

2.0
0.079
0.9
0.035
SCALE 10:1

0.8
0.031

mm
inches

*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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BSS138LT1/D