GATE 2016 Gateforum EC Session3 Answer Key

EC-GATE-2016
GATE 2016 A Brief Analysis

(Based on student test experiences in the stream of EC on 31st
January, 2016 (Afternoon Session)
Section wise analysis of the paper
Section Classification
1 Mark
Engineering Mathematics
Networks
Electronic Devices
Analog Circuits
Digital Circuits
Signals and Systems
Control Systems
Communication
Electromagnetics
Verbal Ability
Numerical Ability
5
1
3
3
3
3
2
3
2
2
3
30
2 Marks
4
3
3
4
3
4
3
4
2
3
2
35
Total No of
Questions
9
4
6
7
6
7
5
7
4
5
5
65
Type of Questions asked from each section
Digital Circuits
Questions came from Boolean expression simplification,

microprocessor, logic gates, Sequential circuits.
Electronic Devices
Questions came from Solar cell, pn junction diode, MOS

capacitor, BJT
Analog Circuits
OP-amp, zener diode, diode, 555 timers, BJT, MOSFET
Signals and Systems
Questions came from Z-transforms, Sampling, Laplace

transform, Filters, DFT.
Networks
Questions came from Basics of networks, Two port networks,

Steady state Analysis.
Control Systems
Questions came from Root locus, R-H criterion, Block diagram

reduction, Time Domain analysis
Communications
Questions came from Digital communication, Information

theory.
Electromagnetics
Questions came from Wave guides, Polarization, Maxwells

equations
Disclaimer This paper analysis and questions have been collated based on the memory of some students who appeared in the
paper and should be considered only as guidelines. GATEFORUM does not take any responsibility for the correctness of the
same.
EC-GATE-2016
Questions from the paper

General Aptitude
1.
Key:
Exp:
If y=mx+c curve passes through (0,0) and (2,6) then m= _________.

3
y=mx+c passing through (0,0) 0 0 c c 0
y=mx+c passing through (2,6) 6 2m m 3
2.
Key:
Exp:
It takes 10s, 15s for two trains moving in same direction, to completely pass a pole. Length of
first train is 120 m and other is 150m. The magnitude of the difference between speeds is m/s.
(A) 2
(B) 10
(C) 12
(D) 22
(A)
length
Speed
length speed time
time
120 10 s 1 s1 12
150 15 s 2 s 2 10
s1 s 2 2
3.
Key:
4.
Key:
Exp
Four undergraduates are staying is a room. They agreed that older enjoys the more space. Manu is
two months older than Sravan, who is one month younger than Trideep. Pavan is one month older
than Sravan. Who will enjoy more space in room.
(A) Manu
(B) Sravan
(C) Trideep
(D) Pavan
(A)
The area bounded by 3x+2y=14 and 2x-3y=5 in the first quadrant is
(A) 14.95
(B) 15.25
(C) 15.70
(D) 20.35
(B)
14
A ,0
3
B 0, 7
5
C , 0
2
5
D 0,
E 4,1
B
3x 2y 14
2x 3y 5
E
R
O
x
C
Required area is area of

OAB area of CEA
1 14
7 15.25 sq.units
2 3
same.
EC-GATE-2016
Technical
1.
In below figure current i is __________A.

1A
5
8V
1
1
1
8V
C1
Key:
Exp:
-1
Nodal equation at V
V 8 V V 8 V

0
1
1
1
1
4V 16
1A
8V
i1
V 4V
By using KCL at node a.
84
1
i1 0 i1 5A
1
KCL at b
4
i1 i 0 4 5 i 0
1
i 1A
0V
8V
Px
P1
2.
The charge density profile shown in figure. The resultant potential

distribution is best described by
Vx
(A)
(B)
V(x)
(D)
V(x)
V(x)
P1
(C)
same.
EC-GATE-2016
Key:
(D)
Exp:
q
q
Electrical 0 N d x no N d x po
x2
x
2w 0
Potential (x) 0
P(x)
V(x)
P1
b
b
P1
P1
3.
Key:
Exp:
In the below circuit M1 is in saturation has

transconductance gm = 0.01 seimens, Ignoring
internal parasitic capacitance and assuming the
channel length modulation to be zero the small
signal input pole frequency (kHz) is ______.
57.9
Cin 50PF 1 g m R 550PF
VDD
1K
VD
50pF
Vin
5k
M1
g m 0.015
R 1k
R 1k
1 g m R 11
R in 5k
f in
4.
1
57.9 kHz
2R in Cin
z11 z12
The Z parameter matrix
for two port network shows
z 21 z 22
3
IP
OP
(A)
2 2
2 2
2 2
(B)
2 2
1 2
(C)
2 1
2 1
(D)
1 2
same.
EC-GATE-2016
Key:
Exp:
(A)
Since the given network is symmetric
and reciprocal Z11 Z22
Z12 Z21
Z11
V1
I1
V
Z21 2
I1
I2 0
5.
Key:
Exp:
6.
output
input
3 6
2
36
6
I1
I2 0
We know V2 V1 Z21 2
Z
So 11
Z21
V1
Z12 2 2
Z22 2 2
V2
IL 0
If a right handed circularly polarized wave is incident on a place perfect conductor, then the
reflected wave will be _______.
(A) Right handed circularly polarized
(B) left handed circularly polarized
o
(C) Elliptical with all angle 45
(D) horizontally polarized
(B)
If incident wave is right handed polarized then the reflected wave is left handed polarized.
The block diagram of a feedback system is shown in figure the overall closed loop gain of the
system is _________.
G2
G1
H1
Exp:
G2
G1
G1
1 G1H1
H1
G1G 2
Y
x 1 G1H1 G1G 2
same.
EC-GATE-2016
1
dx
is equal to _______.
1 x
7.
Key:
Exp:
8.
f z
Key:
Exp:
-1
1
1 x
d 0 2 1 x
02 2
0
sin z
, the residue of the pole at z = 0 is _______.
z 2
z 0 is a simple pole as
f z
sin z
z 2
1
z3 z5
z
......
2
z
3! 5!
z 0 z 0 ......
1

z0
3!
5!
Residue of f z at t 0 is 1
3
9.
Key:
Exp:
The first two rows in the routh table for characteristics of a closed loop control system are given
as
s3 1 2k 3
4
s 2 2k
The range of k for which the system is stable is
(A) 2.0 k 0.5
(B) 0 k 0.5
(C) 0 k 8
(D) 0.5 k
(D)
S3 1 2k 3
4
S2 2k
From the table we can find characteristic equation
s3 2ks2 2k 3 s 4 0
For stability 2k 2k 3 4
4k 2 6k 4 0
1
k k 2 0
2
1
So the conditions are k and k 2 combiningly k > 2
2
10.
Key:
A triangle in the xy plane is bounded by the straight lines 2x =3y, y = 0 and x = 3. The volume
above the triangle and under the plane x + y + z = 6 is _________.
10
same.
EC-GATE-2016
Exp:
Volume =
z dx dy
2
x
3
y 0
6 x y dy dx
x 0
3
y
6 x y z
x 0
.dx
y0
xb
8 x3
8
2x 2 2 9 33 10 cubic units
9
3
27
0
11.
2
x
3
2x 1 4 2
6 x 3 2 9 x dx
3
2
2
4x x 2 x 2 dx
3
9
2x 3y
A
x limits : 0 to 3
2
y limits: 0 to x
3
An analog baseband signal, band limited to 100MHz, is sampled at the nyquist rate. The samples
are quantized into four message symbols that occur independently with probabilities
P1 P4 0.125 and P2 P3 . The information rate bits sec of the message source is _____.
Key:
Exp:
213.9
Information rate = rH
H bits symbol
r symbols sec
If we assume each sample is mapped to symbol
Then r = 200 MHz
P1 P4 2P2 1
1 3
2P2 1
4 4
3
P2
8
3
P2 P3
8
2
6
8
H log 2 8 log 2 1.069
8
8
3
I.R 213.9 Mbps
12.
Faradays law of electromagnetic s induction is mathematically described by which one of the

followers.
(A) .B 0
Key:
B
(C) E
t
(C)
(B) .D V
(D) H E
D
t
same.
EC-GATE-2016
13.
Key:
Exp:
The minimum number of 2 -input NAND gates required to implement a 2 input XOR gate is
(A) 4
(B) 5
(C) 6
(D) 7
(A)
AB AB A B
14.
For the unity feedback control system shown in below figure the open loop transfer function G(s)
= 2
s s 1
x t et
G s
gt
The steady state error due to unit step i p is _______.
Key:
0.33
Exp:
For the unit feedback system G S
S S 1
For unit step input the steady state error is

1
ess
1 kp
Where k p limsG s lims
s
ess
s 0
2
2
s s 1
1
1
0.33
1 2 3
Key:
The bit error probability of a memory less BSc is 10-5. If 105 bits are sent over this channel, then
the probability that not more than one bit will be in error is _________.
1
Exp:
Pebit 105
15.
n 105 bits
x no. of bits error
P x 1 P x 0 P x 1
5
5
105 5
105 5 1
5 10 0
5 10 1
1 10
10
10 1 10
0
1
105
5
105 5 1
5 10 1
10 1 10
1
1 very close
105 1
105
same.
EC-GATE-2016
16.
For the circuit shown in figure R1 R 2 R 3 1, L 1H, C 1F.

If input Vin cos 106 t , then the overall voltage gain of the circuit is _________.
R1
R3
L
C
Vout
R2
V
in
Key:
Exp:
-1
R
1
A1 1 1 1 6
2
6
jL 10 10
R3
1
1 1
A2
1
R 2 XC
11 2
1 6
10 106
V
The overall voltage gain A v out A1 A 2
Vin
Vout
1
2 1
Vin
2
17.
Key:
Exp:
The forward path transfer function and the feedback path transfer function of single loop negative
feedback control system is given as
k s 2
G s 2
and H s 1
s 2s 2
If the variable perimeter k is real positive, then the location of the breakaway point on the root
locus diagram of the system is _______.
-3.414
To find break point, from characteristic equation we need to arrange k as function of s, then the
dk
0 gives break point.
root of
ds
Characteristic equation is given by
s2 2s 2 k 2k 0
k s 2 s 2 2s 2
s 2 2s 2
k
s2
2
d
d 2
s 2 ds s 2s 2 s 2s ds s 2
dk
ds
s 2 2
same.
EC-GATE-2016
s 2 2s 2 s 2 2s 2
dk

ds
s 2 2
dk
0
ds
2s 2 2s 4s 4 s 2 2s 2 0
j
1
2
s 2 4s 2 0
s 0.58 and 3.414
To find the valid break point we need to find that lies on root locus
3.414 lies on root locus
So break point 3.414.
18.
Current I
The I V characteristics of a solar cell is as
shown in figure, when it is illuminated
uniformly with solar light of power 100
mW/cm2. The solar cell has an area of 3 cm2 Isc 180mA
and fill factor is 0.7. The maximum efficiency
of the cell is _________%.
Key:
21
Exp:
Efficiency
FF.Voc Isc 0.7 0.5 180
100%
Pin
(100 3)
Voc 0.5V
(0,0)
Voltage V
= 21%.
19.
Consider the circuit shown below, Assuming VBE1 VEB2 0.7V . The value of D.C voltage
Vc2 (V)is ____ .
Vcc 2.5V
1 100
Q1
Q2
10 k
2 50
Vc2
1V
1k
same.
10
EC-GATE-2016
Key:
Exp:
0.5
VE2 2.5 VBE1 1.8V
VB2 VE2 0.7 1.1V
0.1
105 A
10k
50 105 A
I B2
I C2
VC2 5 104 103 0.5V
20.
The I-V characteristics of three types of diodes at room temperature made of semiconductors
x, y, z are shown in the figure. Assume that the diodes are uniformly doped and identical in all
respects except their materials. If E gx , E gy , E gz are the band gaps of x,y,z respectively then
(A) E gx E gy E gt
(B) E gx E gy E g2
(C) E gx E gy E gz
(D) No relation
V
Key: (C)
21.
The direct form structure of an FIR filter is shown in figure

unity
delay
x(n)
unity
delay
5
5
Key:
Exp:
The filter can be used to approximate a

(A) LPF
(B) HPF
(C)
(C) BPF
y[n]
(D) BSF
y n 5x n 5x n 2
H e j 5 1 e 2 j
At 0, H e j 0
At ; H e j 0
Thus the filter is band pass filter

same.
11
EC-GATE-2016
22.
Two diodes D1 and D2 shown in figure are Ideal. The two capacitors are identical and the value
of RC is very large than time period of ac signal. If the diodes dont breakdown in reverse bias,
the value of output voltage V0 (volts) in steady state is __________
D1
10sin t
V0
Key:
Exp:
0
Vo 0volts
D2
10V
Vo 0V
10V
23.
A discrete sequence x n n 3 2 n 5 has a z-transform X(z); if Y(z) = X(-z) is the ztransform for another sequence y[n], then,
(A) y[n] x[n]
(B) y[n] x[ n]
(C) y[n] x[n]
(D) y[n] x[ n]
Key:
(B)
Exp:
X(z) z3 2z5
Y(z) X(z) z3 2z5
On applying inverse z-transform,
y[n] [n 3] 2[n 5]
Consider
x[ n] [ n 3] 2[ n 5]
[n 3] 2[n 5]
y[n] x[ n]
24.
A continuous time signal x(t) =cos 6t sin 8t, the Nyquist sampling rate (samples/sec) of
y(t)=x(2t+5) is
(A) 8
(B) 12
(C) 16
(D) 20
Key:
(C)
same.
12
EC-GATE-2016
Exp:
X(f )
Shifting doesnt effects the sampling rate due to scaling

by a factor 2 spectral components are doubled.
Thus maximum frequency of Y(f ) 8.
4
Nyquist rate 8 2 16Hz
2
t cos t is passed through an LTI system with impulse transfer
3
function H s es es . If ck represents kth coefficient of exponential Fourier series of output
25.
An input signal x t 2cos
Key:
then the value of c3 is

(A) 0
(C)
Exp:
H j 2cos
(B) 1
(C) 2
(D) 3
2
2
For 2cos t , output 2k1 cos t
3
3
2
2cos
k1
2cos 1
2
3
3
For cos t, output k 2 cos t
k2
2 cos
2

2
output 2cos t 2 cos t
3
26.
xt
(A)
Key:
Exp:
sin t sin t
*
,
t
t
sin t
t
c3 2
If * is the convolution then the value of x t is

(B)
sin 2t
2 t
(C)
2sin t
t
(D)
sin 2 t
(A)
sin t 1
sa t
t

F
sa t
rect
2
1

F
sa t
rect
2
Convolution in time domain leads to multiplication in frequency domain
1
sin t

rect rect X x t sa t
t
2
2
same.
13
EC-GATE-2016
27.
Figure I and II shows MOS capacitors of unit area. The capacitor in figure I has insulator X (with
thickness t1 1m and r1 4 ) and Y (thickness t 2 3nm and r2 20 ). The capacitor in figure II
has only insulator material X of thickness tq . Find tq _____________ nm.
Metal
t2
2 , Y
t1
1 , X
Metal
1 , X
Figure II
Figure I
Key:
Exp:
28.
t eq
1.6
E1 E 2
.
t1 t 2
E1E 2
4 20
CI
2.5
E1 E 2 E1t 2 E 2 t1 (4 2) (20 1)
t1 t 2
E
4
CII 1
2.5 t Eq 1.6nm
t Eq
t Eq
The injected electron concentration profile in the base region of npn BJT, biased in the active
region is linear as shown in figure. If the area of the emitter base junction is 0.001 cm2,
n 800 cm2 V s
in the base region, the collector current Ic mA at room temperature is __________
VT 26mV, q 1.6 1019 c .

IB
n
IE
Key:
Exp:
n
IC
0.5 m
6.65
Ic qADn
1014 cm3
1014 0
dn
dn
1.6 1019 0.001 800 26 103
qAn V
4
dx
dx
0.5 10
Ic 6.65mA
same.
14
EC-GATE-2016
29.
Frequency of oscillation at pin 3 is ___________kHz..

4
R A 2.2k
VCC
7
R B 4.7k
6
555
2
Out
C 0.022F
Key:
5.64
Exp:
30.
The I-V characteristics of diodes D1 and D2 are given in figure. The simply voltage is varied from
0 to 100V. The breakdown occurs at
1.44
1.44
5.64kHz
R A 2R B C [2200 24700] 0.022 106
ID
D1
80V 70V
0 to100V
D2
D1
(A)
Key:
Exp:
D2
D1 only
(B) D2 only
(C)
Both D1 and D2
(D) None of D1 and D2
(D)
When two diodes are connected in series, the effective breakdown voltages becomes equal to the
sum of their individual breakdown voltage.
Vb Vb1 Vb2 80 70 150V
Since the applied voltage has a maximum of 100V (100<Vb), No diodes will be in breakdown
region.
same.
15
EC-GATE-2016
31.
The surface region of the MOSFET is in

(A) Accumulation
(B) Inversion
(C) Depletion
(D) None of the above
EC
B
B
Key:
Exp:
EF
Ei
EV
(B)
The semiconductor used in the MOSFET is n-type. At the surface the intrinsic level is above EF
as it is found at the distance of below EF, So, the surface is in inversion region.
same.
16

GATE 2016 Gateforum EC Session3 Answer Key

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GATE 2016 Gateforum EC Session3 Answer Key

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EC-GATE-2016

GATE 2016 A Brief Analysis

Type of Questions asked from each section

Questions came from Boolean expression simplification,

Questions came from Solar cell, pn junction diode, MOS

OP-amp, zener diode, diode, 555 timers, BJT, MOSFET

Signals and Systems

Questions came from Z-transforms, Sampling, Laplace

Questions came from Basics of networks, Two port networks,

Questions came from Root locus, R-H criterion, Block diagram

Questions came from Digital communication, Information

Questions came from Wave guides, Polarization, Maxwells

Questions from the paper

If y=mx+c curve passes through (0,0) and (2,6) then m= _________.

Required area is area of

In below figure current i is __________A.

The charge density profile shown in figure. The resultant potential

In the below circuit M1 is in saturation has

Faradays law of electromagnetic s induction is mathematically described by which one of the

The steady state error due to unit step i p is _______.

For the unit feedback system G S

For unit step input the steady state error is

For the circuit shown in figure R1 R 2 R 3 1, L 1H, C 1F.

3.414 lies on root locus

So break point 3.414.

FF.Voc Isc 0.7 0.5 180

Vc2 (V)is ____ .

VC2 5 104 103 0.5V

The direct form structure of an FIR filter is shown in figure

The filter can be used to approximate a

Thus the filter is band pass filter

(C) y[n] x[n]

Shifting doesnt effects the sampling rate due to scaling

Nyquist rate 8 2 16Hz

An input signal x t 2cos

then the value of c3 is

If * is the convolution then the value of x t is

in the base region, the collector current Ic mA at room temperature is __________

VT 26mV, q 1.6 1019 c .

Frequency of oscillation at pin 3 is ___________kHz..

(D) None of D1 and D2

The surface region of the MOSFET is in

(D) None of the above

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