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Lecture Outline
Continue the study of semiconductor devices by looking at
the material used to make most devices
The energy band diagram is a representation of carrier
energy in a semiconducting material and will be related to
an orbital bonding representation
Devices require materials with tailored characteristics,
obtained through doping, the controlled introduction of
impurities
Will discuss electrons and holes, as well as intrinsic, n-type
and p-type materials
Later lectures will apply these concepts to diode, bipolar
junction transistor and FET
ELEC
3908,
Physical
Electronics:
Energy
Band
Diagrams
and
Doping
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Covalent Bonding
Silicon crystal formed by covalent
bonds
Covalent bonds share electrons
between atoms in lattice so each
thinks its orbitals are full
Most important bands are therefore
band which would be filled at 0 K valence band
next band above in energy conduction band
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Electron movement in
conduction band can be
modeled directly
Movement of electrons in
valence band modeled as
movement (in opposite
direction) of positively
charged hole
Electric Field
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Intrinsic Material
Semiconducting material which has not had any impurities
added is called intrinsic
In an intrinsic material, the number of electrons and holes must
be equal because they are generated in pairs
Call the density of electrons and holes in intrinsic material the
intrinsic density ni (for Si@300K, ni 1.45x1010 cm-3)
Therefore, for intrinsic material
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Extrinsic Material
Intentional addition of impurities during manufacture or in
specialized fabrication steps is termed doping
Doped material is called extrinsic
Ability to change the electrical characteristics of the material
through selective introduction of impurities is the basic reason
why semiconductor devices are possible
Later lectures will outline the processes used to introduce
impurities in a controlled and repeatable way
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Mass-Action Law
For intrinsic material, n = p = ni, therefore
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Compensated Doping
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Lecture Summary
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