This spreadsheet allows calculation of relevant parameters related to the transformer, inductor and snubber clamp

for the Si3402 Power over Ethernet PD controller in the isolated configuration (both continuous case and discontinu
or for the inductor in the non-isolated configuration. See AN296 for more details.

The calculations are approximate but give a fairly accurate estimate for efficiency, peak current and other relevant p
The continuous case formulas require the user to estimate efficiency. If the estimate is more than 1% off the cell wil
highlighted and the user should update the estimate to be within 1% of the calculation.

Input power and chip temperature are also estimated. If the chip junction temperature exceeds 140C or the input po
802.3af limits, these cells will be highlighted.

The spreadsheets are protected to prevent inadvertant changes to parameters that are usually not varied as well as
deletion of formulas. This may be undone without a password if a user wants to check sensitivity to parameters that
The variables that are commonly changed have a box with dark border.
These cells are not protected.
Version 2 of this spreedshet updates the resistor naming to agree with the Si3402-EVB and Si3402ISO-EVB users

inductor and snubber clamp

ntinuous case and discontinuous case)

k current and other relevant parameters.

more than 1% off the cell will be

exceeds 140C or the input power exceeds

e usually not varied as well as accidental

sensitivity to parameters that are related to the Si3402.

B and Si3402ISO-EVB users guides.

IC Parameters
Switching frequency
Switcher FET resistance
Diode bridge drop
Bridge and Hot Swap resistance
Bias currrent
Capacitance at SWO

330 Khz
0.6 Ohms
2 Volts
3.5 Ohms
2.5 mA
170 pF

Use Conditions
Switcher input voltage
Output current
Output voltage
Ambient Temperature

50 Volts
2 Amps
3.3 Volts
70 C

Use discontinuous spreadsheet if output is

R5=
24.4 Kohms
R6=
14.7 Kohms

0.873 Amps

Transformer, snubber and diode parameters (assuming active snubber)

Enter 1 for diode bypass
Transfomer turns ratio
Transformer magnetizing inductance
Transformer leakage inductance
Transformer primary resistance
Transformer and rectifier resistance
Snubber voltage
Snubber resistance
Schottky diode drop

1 Diode bypass is used to reduce temperature for the Si3402 and higher power levels
3.3 N:1
4.00E-05 Henries
6.00E-07 Henries
0.08 Ohms
0.1 Ohms
22 Volts
This must be less than 25 minus snubber tolerance
0.1 Ohms
0.3 Volts

Calculations
Switcher section appx efficiency
Duty Cycle
Change in transformer primary current
Peak transformer primary current
Peak transformer secondary current
RMS input current ripple
RMS Output current ripple
Power in Schottky
Power in switcher FET
Power in snubber
Power in transformer resistance
Power to drive capacitance at SWO
Input current

90 Percent
0.192 Portion of the waveform that the switcher FET is on
0.727 Amps
1.197 Amps
This is the peak to peak input ripple current
3.950 Amps
This is the peak to peak output ripple current
0.341 Amps
Use this to choose ripple handling of input filter capcitors
1.269 Amps
Use this to choose ripple handling of output filter capacitors
0.600 Watts
0.085 Watts
0.307 Watts
0.506 watts
0.140 Watts
0.167 Amps

Summary
PD input voltage
PD input power
Overall efficiency
Power in Si3402
Junction Temperature

52.585 Volts
8.796 Watts
75.032 Percent
0.448 Watts
89.724 C

Must be <12.95W

Must be <140C

IC Parameters
Switching frequency
Switcher FET resistance
Diode bridge drop
Bridge and Hot Swap resistance
Bias currrent
Capacitance at SWO

330 Khz
0.6 Ohms
2 Volts
3.5 Ohms
2.5 mA
170 pF

Use Conditions
Switcher input voltage
Output current
Output voltage
Ambient Temperature

46 Volts
0.26 Amps
5 Volts
70 C

Use continuous spreadsheet if current >

R5=
36.9 Kohms
R6=
12.2 Kohms

Transfomer, snubber and diode parameters

Enter 1 for diode bypass
Transfomer turns ratio
Transformer magentizing inductance
Transformer leakage inductance
Transformer primary resistance
Transformer and rectifier resistance
Snubber voltage
Snubber resistance
Schottky diode drop

0 Diode bypass is used to reduce temperature for the Si3402 and higher p
2.5 N:1
4.00E-05 Henries
6.00E-07 Henries
0.06 Ohms
0.1 Ohms
22 Volts
0.1 Ohms
0.3 Volts

Calculations
Duty Cycle
Secondary duty cycle
Peak transformer primary current
Peak secondary current
Power in Schottky
Power in switcher FET
Power in snubber
Power in transformer resistance
Power to drive capacitance
Input current

0.138
0.480
0.482 Amps
1.204 Amps
0.078 Watts
0.006 Watts
0.058 Watts
0.024 Watts
0.119 Watts
0.037 Amps

Summary
PD input voltage
PD input power
Overall efficiency
Power in Si3402
Junction Temperature

48.129 Volts
1.778 Watts
73.106 Percent
0.312 Watts
83.745 C

Must be <12.95W

Must be <140C

0.681 Amps

ure for the Si3402 and higher power levels

IC parameters
Switcher frequency
Switcher resistance
Diode bridge drop
Hot swap and diode resistance
Bias Current
Capacitance at switcher output

330 Khz
0.6 ohms
2 volts
3.5 ohms
2.5 mA
170 pF

1 ohm hot swap 1.25 ohm/diode

Use conditions
Vin
Io
Vo
Ambient temperature

48 34-55V
This is the voltage at the diode bridge output - generally 2-3V less than the input voltage
0.8 Desired output current (amps)
5 Desired ouput voltage (volts)
R6=
8.70 Kohms
70 Centigrade
R5=
2.87 Kohms

Diode and Inductor parameters

Enter 1 for diode bypass
Vf
Diode resistance
Inductance
DCR

Calculations
Duty cycle
Ripple current
RMS output ripple current
RMS current
Power in inductor
Peak input current
RMS input current
Power in switcher FET
Power in diode
Loss in switcher output cap
Input current

0 Diode bypass is used to reduce temperature for the Si3402 and higher power levels
0.4 Typically 0.4V
0.2 Ohms
Includes diode and trace resistance
33 uH
66 mOhm

Continuous case only

0.112
0.441 Amps
0.127 Amps
0.810 Amps
0.043 Watts
1.020 Amps
0.315 Amps
0.044 Watts
0.437 Watts
0.129 Watts
0.099 Amps

Portion of the waveform that the switcher FET is on

Peak to peak output current ripple. This is for output ripple calcualtions.
This is the RMS ripple current for the output filter
Irms=Io^2+Ir^2/12. This is the inductor RMS current
This is for caluating input ripple voltage
This is for RMS ripple of input capacitor
Includes diode and trace resistance

Summary
PSE input voltage
PSE input power
Overall efficiency
Power in Si3402
Junction temperature

50.348 Volts
5.007 Watts
Must be <12.95Watts
79.895 Percent
0.527 Watts
93.173344 Centigrade
Assumed 2 square inch heat spreader - must be less than 140C