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Provided that the power dissipated in the diode is less than the
maximum rated, the diode is not damaged when operating in the
breakdown region. In fact, Zener diodes are designed to operate
in this region.
The circuit symbol for the Zener diode is
The manufacturer specifies the VZ0 and test current IZT. One can
design Zeners with a wide range of voltages.
The rated VZ at the specified IZT is listed for these Zener diodes.
The circled component, for example, has VZ = 8.2 V at IZT = 31
mA. The maximum rated power is 1 W for this device.
As the current deviates from the specified value IZT, the voltage
VZ also changes, though perhaps only by a small amount. The
change in voltage VZ is related to the change in the current IZ
as
VZ rz I Z
(1)
where rz is the incremental or dynamic resistance at the Q point
and is usually a few Ohms to tens of Ohms. See the datasheet for
the particular device you are working with.
Because of the nearly linear relationships in the breakdown
region, the reverse bias model of the Zener diode is
VZ VZ 0
where
as is apparent from Fig. 3.21.
rz I Z
(3.20),(2)
or
then
IL
6.8
2000
3.4 mA.
rz I Z and since I Z
I S , as it
3.4 mA then
VO
20
3.4 10
68 mV
10 V
500
+
VO
-
I ZK
0.2 mA and
If V+ = 9 V:
9 6.7
4.6 mA.
500
Therefore, IL = 4.6 mA-0.2 mA = 4.4 mA, so that
VL
6.7
RL
1,522
I L 4.4 10 3
IS
If V+ = 11 V:
11 6.7
8.6 mA.
500
Therefore, IL = 8.6 mA-0.2 mA = 8.4 mA, so that
VL
6.7
RL
798
3
I L 8.4 10
IS