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THE DISLOCATION
THEORY
ABSTRACT:
The crystal defects spread over a wide range.
The most important mechanisms include the
slip and the dislocation. In this text, the effect
on dislocation behavior of considering real FCC
(Face-Centered Cubic), BCC (Body-Centered
Cubic), or HCP (Hexagonal Close-Packed) crystal
structures are considered.
THEORY:
There are many methods which are applied to
extract the best possible data around the
defects. Practically all the experimental
techniques for detecting dislocations utilize the
strain field around a dislocation to increase its
effective size. These are done on the basis of
either chemical reaction with the dislocating
crystals or by examining physically the
dislocations. The simplest chemical technique is
the use of an etchant which forms a pit at the
point where a dislocation intersects the surface.
Etch pits are formed at dislocation sites because
the strain field surrounding the dislocation
causes preferential chemical attack.
EXPLANATION:
To understand the etch-pit formation, we can
consider this excellent resolution from etch-pit
studies on alpha brass.