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Agenda
Si DRIE Capability
Bosch Process
Die Strength
Summary
Scallops
generated by
isotropic Si etch
Dicing Schemes
DBG Dice Before Grind
Standard equipment
Partial F/S DRIE
Invert wafer & frame mount
Singulate during B/S grinding
Rapier-200S
Sized for 200mm wafer tape frames
Modified handling & ESC
Same processes as standard Rapier
Rapier-300S
Sized for 300mm wafer tape frames
Modified handling & ESC
Same processes as standard Rapier
Available Q4,15
Damage
Bosch etch creates clean scallops
No vibrations, debris, water
Increased die strength
Yield improvement
Die Density
Narrower dicing lanes
Die shape/location can be varied
20m x 100m
>7wph
30m x 300m
>3wph
50m x 190m
>5.5wph
7m x 120m
>7wph
10m x 100m
>7wph
All throughputs include; process & handling overheads; process times + overetch;
wafer-less inter-wafer chamber plasma cleans
Process Flow
Lane Definition
Combine LASER/Blade & Plasma
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Metals
Backside metal (BSM), Bondpads and solder bumps
All are compatible with DRIE PM
No apparent risk to chamber condition
Summary
Plasma dicing is rapidly becoming an accepted technique
Still early days in the adoption cycle
Thanks to
SPTS Samples & Applications Groups
DISCO
Thank You
www.spts.com
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