Lecture15 DiodeModelsSmalSignalZener

Lecture 15
P-N Junction Diodes: Part 5

Large signal (complete model) and small signal
(limited use) models of a Diode
Reading:
Jaeger 3.4-3.14, 13.4, Notes
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ECE 3040 - Dr. Alan Doolittle
Diode Applications: 1/2 Wave Rectifier

id
vs
vd
RLoad
VLoad
vs-vLoad=vd
Id=-Io
vLoad = -Io RLoad
t
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Diode Applications: Peak Detector

id
vs
+
-
vd
CLoad
VLoad
vs-vLoad=vd
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Diode Applications: 1/2 Wave Rectifier with an RC Load

id
vs
+
-
CLoad
RLoad
VLoad
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Diode Applications: LED or a Laser Diode

I
Light Emission
under forward Bias
V1=IR
R=1000 ohms
VA
V=9V
Diode made from a direct

bandgap semiconductor.
Quantum well made from

smaller bandgap material
Electron Current
P-type
Al0.5Ga0.5As
-qVA
FP
Hole Current
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GaAs
FN
Light
N-type
Al0.5Ga0.5As
Note: These devices may not be a

simple p-n type diode, but behave
electrically identical to a p-n
junction diode.
Majority Carriers that are injected to the oppposite
side of the diode under forward bias become minority
carriers and recombine. In a direct bandgap material,
this recombination can result in the creation of
photons. In a real device, special areas are used to trap
electrons and holes to increase the rate at which they
recombine. These areas are called quantum wells.
Models used for analysis of Diode Circuits

Mathematical Model (previously developed)
Graphical Analysis
Ideal diode Model
Treat the diode as an ideal switch
Constant Voltage Drop Model
Treat as an ideal switch plus a battery
Large signal Model (model used by SPICE transient
analysis)
multi-components
generally applicable
Small Signal Model (model used by SPICE AC analysis)
easier math
valid only for limited conditions-ie small signals
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Diode Circuits: Graphical Solution

To solve the problem graphically,
we need to find the IV curve for the
resistor:
Intersection of the
two curves gives
the DC operational
voltage and
currents
VA=0V -> I=9V/1000 ohms

ID
I
V1=IR
R=1000 ohms
V=9V
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Load Line
VA
VD
I=0 -> VA=9V
Diode Circuits: Other Models

Besides the direct mathematical solution and the graphical
solution, we can use 2 other models to approximate circuit
solutions:
1.) Ideal Diode Model:
a) The voltage across the diode is zero for forward bias.
b) The slope of the current voltage curve is infinite for
forward bias.
c) The current across the diode is zero for reverse bias.
I
Circuit Symbol
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Diode Circuits: Other Models

2.) Constant Voltage Drop (CVD) Model:
a) The voltage across the diode is a non-zero value for
forward bias. Normally this is taken as 0.6 or 0.7 volts.
b) The slope of the current voltage curve is infinite for
forward bias.
c) The current across the diode is zero for reverse bias.
Von
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+
-
0.6V
Concept of the Small- Signal Model

Superposition principle allows us to separate DC and AC
analysis of circuits containing active devices (like diodes,
transistors, amplifiers etc...).
We assume the AC signals are small enough so that the circuit
behaves linearly and can be analyzed by replacing non-linear
components by Linear Elements such as resistors etc...
DC analysis is first performed to determine the bias point which
will determine some of the parameters used in the AC-small
signal analysis.
Consider a two terminal device (like a pn diode) at a given DC
operating point (or Q- point).
Let: VD = DC voltage applied to the diode
ID = DC current produced by the diode
Total current or voltage = DC part + AC part:
vD = VD + vd
iD = ID + id
Note: (1) all caps = DC; (2) all lower case = AC; (3) lower case
symbol with upper case subscript = total voltage or current
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Small Signal Analysis of Diodes
For small AC voltage

swings, vd, about a fixed
DC voltage, VD the diode IV
curve can be approximated as
a resistor (I.e. linear currentvoltage relationship). The
fixed DC operating point,
(VD-ID), is called the bias
point or the quiescent or Qpoint.
Diode Biased in
Forward Bias: Tiny
small signal
resistance, rd.
ID
iD=ID+id
2
2
2
vD=VD+vd
V1D
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Diode Biased in
Forward Bias: Tiny
small signal
resistance, rd.
3
ID
iD=ID+id
2
2
2
vD=VD+vd
V1D
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Diode Biased in
Forward Bias: Tiny
small signal
resistance, rd.
3
ID
iD=ID+id
2
2
2
vD=VD+vd
V1D
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Small vs Large Signal Concept For Diodes

Consider the small signal case where
v D (t) = 0.6 + 0.025sin(wt) then,
i D (t) = 1e - 12(e v D (t)/0.0259 - 1)
iD=ID+id
i d (t)
vD=VD+vd
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0.615
0.0184
0.61
0.0164
0.605
0.0144
0.6
0.0124
0.595
0.0104
0.59
0.0084
Current
Some distortion is
observed because in
this example we have
exceeded the
mathematical limits
valid for small signal
analysis (0.025 is not
<< kT/q). In most
cases, this is tolerable.
Voltage
Both Voltage and

Current are
(approximately) a
sine wave.
1
1
v d (t) but i D (t) v D (t)
rd
rd
Voltage 0.6V+0.025sin(wt)
I=f(V)
0.585
0.0064
0
10
20
30
40
50
60
70
Time
Small vs Large Signal Concept For Diodes

Consider the Large Signal case where
v D (t) = 0.6sin(wt) then,
iD=ID+id
2
i D (t) = 1e - 12(e v D (t)/0.0259 - 1)

1
i D (t) v D (t)
rd
vD=VD+vd
0.8
0.6sin(wt)
0.008
0.006
0.004
0.002
10
20
30
40
50
60
70
Current
Voltage
Voltage is a sine
0.6
wave but the
0.4
current is
distorted
0.2
0.01
I=f(V)
-0.002
-0.2
-0.004
-0.4
-0.006
-0.6
-0.008
-0.8
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-0.01
Time
The transition from valid small signal limits to Large Signal

conditions is a matter of what is acceptable for your requirements
i D (t) = 1e - 12(e v D (t)/0.0259 - 1)
v D (t) = 0.6 + 0.001sin(wt)
0.601
0.009
FFT
0.012
0.008
0.0118
0.6005
0.0116
Current
Voltage
0.01
0.0122
0.6
0.0114
0.5995
Magnitude of Signal
0.6015
0.007
0.006
No
Distortion
0.005
0.004
0.003
0.0112
0.002
0.599
0.011
0.001
I=f(V)
0.5985
0.0108
0
10
20
30
40
50
60
70
10
20
30
0.12
0.0164
0.1
0.605
0.0144
0.6
0.0124
0.595
0.0104
0.59
0.0084
Current
Voltage
0.61
0.0184
Magnitude of Signal
v D (t) = 0.6 + 0.01sin(wt)
0.615
20
30
40
50
0.04
50
60
70
50
60
70
0
60
70
10
20
30
40
Frequency
v D (t) = 0.6 + 0.1sin(wt)
0.6
4.5
0.7
0.4
0.6
0
0.55
Current
0.2
-0.2
FFT
Magnitude of Signal
0.65
Voltage
70
0.02
Time
0.75
60
Slight
Distortion
0.06
0.0064
10
50
FFT
0.08
I=f(V)
0.585
0
40
Frequency
Time
3.5
3
Major
distortion
2.5
2
1.5
0.5
1
-0.4
0.45
I=f(V)
0.4
-0.6
0
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10
20
30
40
Time
50
0.5
60
70
10
20
30
40
Frequency

g d small signal conduc tan ce of the diode
rd small signal resis tan ce of the diode, rd =
gd =
i D
v D
Bias Po int or "Quiscient " or "Q po int"
vD VT
I S e
1
=
v D
I S vD VT
=
e
VT
Q po int
Q po int
I S VD VT vd VT
=
e
e
VT
Assu min g small signals, v d VT , e

VD
I e
= S
VT
VT
ISe
gd =
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1
gd
VD
VT
vd
VT
1 and
IS + IS
VT
ID + IS
VT
V A VT
kT
I D = I o e
1 where VT =
q
iD = I D + g d vd
ID + IS
gd =
VT
ID
gd
VT
in General
VA
in Forward Bias
VA >> 0 I D I o e
IS + IS
gd
0 in Re verse Bias
VT
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VT
VA << 0
where VT =
VA
VT
kT
q
Diode Biased in
Reverse Bias: Huge
small signal
resistance, rd=1/gd
VD
iD=ID+id
vD=VD+vd
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Small Signal Analysis of Diodes:

Application: Diode as an AC variable attenuator
R
vs
rd
C large
enough to be
an AC short
vout
IDC
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Conversion to AC equivalent circuit
vs
rd
C large enough
to be an AC
short
vout
ID
rd
vout
Steps to Analyze a Diode Circuit

1.) Determine DC operating point and
calculate small signal parameters, rd and
others to come in later lectures)
2.) Convert to the AC only model.
DC Voltage sources are shorts
DC Current sources are open circuits
Large capacitors are short circuits
Large inductors are open circuits
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Application: Diode as an AC variable attenuator
rd
vout
vout
vout = vin
1
1+
R
rd
= vin
1+
(I DC + I S )R
vout vin
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rd
= vin
rd + R
or at room temperature
VT
1
1 + 40(I DC + I S )R
Actual voltage drop

across the diode
including resistive
losses from quasineutral regions.
Completing the Large signal model of a diode

iD=IS(exp(vD/(VT)) - 1) where accounts
vD
vD
for previously neglected recombinationgeneration in the depletion region
iD=IS(exp[(vD- iDRSeries )/(VT)] - 1) accounts
RSeries
for the series resistance drop in the quasineutral regions.
Depletionregion
CJunction
p-region
CDiffusion
ppo
--+ -+
+
-+--+
-+-+
+
npo
x=0
C=
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no
+- +- ++- ++- ++
n-region
pno
x=0
dQ
= Change in ch arg e resulting from a change in voltage
'
dv D

For an abrupt diode (uniform doping on both sides of the junction):
K s o A
W
but...
C junction =
W = x p + xn =
C junction
2K S o (N A + N D )
(Vbi V A )
q
NAND
qK S o N A N D
1
=A
2 ( N A + N D ) (Vbi V A )
Thus,
C Jo = C junction
VA =0
qK S o N A N D
1
=A
2 ( N A + N D ) (Vbi )
and
CJ =
C Jo
1
VA
Vbi
Junction capacitance is due to majority carrier charges displaced by the depletion

width (I.e. similar to a parallel plate capacitor).
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More generally for a profile with a constant doping on the heavily doped side of
the junction and variable doping profile on the a low doped side that is described
by: N(x)=bxm for all x>0
K A
C junction = s o
W
but...
1
(m + 2 )K S o
(m+ 2 )
(Vbi V A )
W = x p + xn =
qb
AK S o
C junction =
1
(m + 2 )K S o
(m+ 2 )
(Vbi V A )
qb
Thus,
C Jo = C junction
VA =0
AK S o
1
and
CJ =
C Jo
1
(m + 2 )K S o
V A (m+ 2 )
1
(Vbi )
qb
Vbi
Junction capacitance is due to majority carrier charges displaced by the depletion
width (I.e. similar to a parallel plate capacitor).
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(m+ 2 )

C Diffusion =
=
dQD
dv D'
dQD dt
dt dv D'
vD VT
x Lp
vD VT
x Ln
1 e
1e
QD = qA p no e
dx + qA n po e
dx
0
0
'
vD VT
= e
1 p no L p + n po Ln qA
'
dQD
dv D'
1 vD VT
=
e
p no L p + n po Ln qA dt
dt
VT
vD' V
1 + 1
IS e
dQD
dv D'
1
p no L p + n po Ln qA
=
dt
VT
IS
dt
Diffusion capacitance due to excess injected minority carrier charge at the depletion
region edges. Since this charge results from minority carriers, this capacitance is
negligible at zero or reverse biases.
'
'
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1 iD + I S
dQD
dvD'
=
pno L p + n po Ln qA
dt
VT I S
dt
dQD iD + I S pno L p + n po Ln qA dvD'
=
dt
IS
dt
VT
C Diffusion
where t =
[p
pno L p + n po Ln qA dvD' dt
dQD dt
=
= gd
'
dt dvD'
IS
dt
dv
D
C Diffusion = g d
C Diffusion = g d t
pno L p + n po Ln qA dvD'
dQD
= gd
dt
IS
dt
iD=ID+id
iD~ID
no
3
2
pno L p + n po Ln qA
cm cm q cm
= gd
= g d [sec]
q
IS
sec
L p + n po Ln qA
IS
Unit
analysis
is the transit time or how quickly a carrier can respond
to a change in voltage (physically the carriers have to move across the junction, requiring a finite time to do so)
i
or in SPICE , C Diffusion = D t
vD
Diffusion capacitance due to excess injected minority carrier charge at the depletion
region edges.
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Summary of the Large signal model of a diode (SPICE Model)
i D = I S (e
( v D - i D R Series )
VT
- 1)
RSeries
C Jo = C junction
CJunction
and
C Diffusion = g d t
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CJ =
VA =0
AK S o
(m + 2)K S o
(
)
V
bi
qb
C Jo
VA
1
Vbi
(m+ 2 )
(m+ 2 )
f (V A )
1.) Mathematical model

2.) SPICE Model (this page)
3.) Ideal Diode Model
4.) Constant Voltage Drop (CVD) Model
5.) Graphical circuit model
Addition of Capacitance Components
No significant minority carrier

concentration at the depletion
region edges in reverse or smallforward bias => CD<<CJ
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Significant
minority
carrier
concentration
at the
depletion
region edges
in largeforward bias
=> CD>>CJ
Summary of the Small signal model of a diode
iD = I D + g d vd
rd = 1/g d
where
ID + IS
gd =
VT
f (I D )
RSeries
C Jo = C junction
VA =0
CJunction
and
CJ =
AK S o
(m + 2)K S o
(
)
V
bi
qb
C Jo
VA
1
Vbi
(m+ 2 )
(m+ 2 )
f (V A )
C Diffusion = g d t f (I D )
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Things we have added to account for Non-ideal behavior

Series resistance to account for finite resistance of the quasi-neutral
regions and metal contact resistance's.
Diode ideality factor, , to account for thermal recombinationgeneration in the depletion region.
Junction capacitance due to majority carrier charges displaced by
the depletion width (I.e. similar to a parallel plate capacitor).
Diffusion capacitance due to excess injected minority carrier
charge at the depletion region edges. Since this charge results from
minority carriers, this capacitance is negligible at zero or reverse
biases.
Things we still need to add to account for Non-ideal behavior
Reverse Breakdown characteristics
Breakdown is a deceptive term because no damage typically
occurs to the device. Often diodes are designed to operate in the
breakdown mode.
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Breakdown Mechanisms
Avalanche Breakdown:
Excess current flows due to
electron-hole pair
multiplication due to impact
ionization. This current
rapidly increases with
increasing reverse bias.
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Breakdown Mechanisms
Zener Breakdown:
Excess current flows due to bonding electrons tunneling into empty
conduction band states. The tunneling barrier must be sufficiently thin.
This current rapidly increases with increasing reverse bias.
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Zener Diodes
Zener diodes may actually operate based on either avalanche or
zener breakdown mechanisms.
Rule of thumb: |VBR|>6EG/q is typically Avalanche Breakdown
Slightly different symbol
I
R
V>VBR
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VBR almost
constant can act
as a high
voltage (~1V 100 V) DC
reference

Lecture15 DiodeModelsSmalSignalZener

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Lecture 15

P-N Junction Diodes: Part 5

ECE 3040 - Dr. Alan Doolittle

Diode Applications: 1/2 Wave Rectifier

ECE 3040 - Dr. Alan Doolittle

Diode Applications: Peak Detector

ECE 3040 - Dr. Alan Doolittle

Diode Applications: 1/2 Wave Rectifier with an RC Load

ECE 3040 - Dr. Alan Doolittle

Diode Applications: LED or a Laser Diode

Diode made from a direct

Quantum well made from

Note: These devices may not be a

ECE 3040 - Dr. Alan Doolittle

Models used for analysis of Diode Circuits

ECE 3040 - Dr. Alan Doolittle

Diode Circuits: Graphical Solution

VA=0V -> I=9V/1000 ohms

I=0 -> VA=9V

ECE 3040 - Dr. Alan Doolittle

Diode Circuits: Other Models

ECE 3040 - Dr. Alan Doolittle

Diode Circuits: Other Models

ECE 3040 - Dr. Alan Doolittle

Concept of the Small- Signal Model

ECE 3040 - Dr. Alan Doolittle

Small Signal Analysis of Diodes

For small AC voltage

ECE 3040 - Dr. Alan Doolittle

Small Signal Analysis of Diodes

For small AC voltage

ECE 3040 - Dr. Alan Doolittle

Small Signal Analysis of Diodes

For small AC voltage

ECE 3040 - Dr. Alan Doolittle

Small vs Large Signal Concept For Diodes

Both Voltage and

ECE 3040 - Dr. Alan Doolittle

Small vs Large Signal Concept For Diodes

v D (t) = 0.6sin(wt) then,

i D (t) = 1e - 12(e v D (t)/0.0259 - 1)

ECE 3040 - Dr. Alan Doolittle

The transition from valid small signal limits to Large Signal

v D (t) = 0.6 + 0.01sin(wt)

v D (t) = 0.6 + 0.1sin(wt)

ECE 3040 - Dr. Alan Doolittle

Small Signal Analysis of Diodes

Bias Po int or "Quiscient " or "Q po int"

Assu min g small signals, v d VT , e

Small Signal Analysis of Diodes

ECE 3040 - Dr. Alan Doolittle

Small Signal Analysis of Diodes

ECE 3040 - Dr. Alan Doolittle

Small Signal Analysis of Diodes:

ECE 3040 - Dr. Alan Doolittle

Small Signal Analysis of Diodes:

Steps to Analyze a Diode Circuit

ECE 3040 - Dr. Alan Doolittle

Small Signal Analysis of Diodes:

ECE 3040 - Dr. Alan Doolittle

Actual voltage drop

Completing the Large signal model of a diode

for previously neglected recombinationgeneration in the depletion region