Beruflich Dokumente
Kultur Dokumente
INA114
114
INA
114
Precision
INSTRUMENTATION AMPLIFIER
FEATURES
DESCRIPTION
The INA114 is a low cost, general purpose instrumentation amplifier offering excellent accuracy. Its versatile 3-op amp design and small size make it ideal for a
wide range of applications.
APPLICATIONS
BRIDGE AMPLIFIER
THERMOCOUPLE AMPLIFIER
RTD SENSOR AMPLIFIER
MEDICAL INSTRUMENTATION
DATA ACQUISITION
V+
7 (13)
VIN
2
(4)
Over-Voltage
Protection
INA114
Feedback
A1
25k
A3
RG
8
VIN
(5)
DIP Connected
Internally
6
(11)
VO
G=1+
25k
(15)
3
(12)
25k
(2)
25k
Over-Voltage
Protection
A2
25k
25k
(10)
50k
RG
Ref
4 (7)
DIP
(SOIC)
V
International Airport Industrial Park Mailing Address: PO Box 11400, Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 Tel: (520) 746-1111 Twx: 910-952-1111
Internet: http://www.burr-brown.com/ FAXLine: (800) 548-6133 (US/Canada Only) Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132
SBOS014
PDS-1142D
1
INA114
SPECIFICATIONS
ELECTRICAL
At TA = +25C, VS = 15V, RL = 2k, unless otherwise noted.
INA114BP, BU
PARAMETER
CONDITIONS
INPUT
Offset Voltage, RTI
Initial
vs Temperature
vs Power Supply
Long-Term Stability
Impedance, Differential
Common-Mode
Input Common-Mode Range
Safe Input Voltage
Common-Mode Rejection
TYP
MAX
50 + 100/G
0.25 + 5/G
3 + 10/G
11
10 + 20/G
0.1 + 0.5/G
0.5 + 2/G
0.2 + 0.5/G
1010 || 6
1010 || 6
13.5
TA = +25C
TA = TMIN to TMAX
VS = 2.25V to 18V
VCM = 10V, RS = 1k
G=1
G = 10
G = 100
G = 1000
BIAS CURRENT
vs Temperature
96
115
120
120
0.5
8
OFFSET CURRENT
vs Temperature
0.5
8
80
96
110
115
40
G=1
G = 10
G = 100
G = 1000
G=1
Gain vs Temperature
50k Resistance(1)
Nonlinearity
G=1
G = 10
G = 100
G = 1000
IO = 5mA, TMIN to TMAX
VS = 11.4V, RL = 2k
VS = 2.25V, RL = 2k
13.5
10
1
Overload Recovery
G=1
G = 10
G = 100
G = 1000
VO = 10V, G = 10
G=1
G = 10
G = 100
G = 1000
50% Overdrive
POWER SUPPLY
Voltage Range
Current
VIN = 0V
0.01%
75
90
106
106
2
2
0.3
2.25
TEMPERATURE RANGE
Specification
Operating
JA
TYP
MAX
90
106
110
110
5
5
UNITS
V
V/C
V/V
V/mo
|| pF
|| pF
V
V
dB
dB
dB
dB
nA
pA/C
nA
pA/C
15
11
11
0.4
nV/Hz
nV/Hz
nV/Hz
Vp-p
0.4
0.2
18
pA/Hz
pA/Hz
pAp-p
1 + (50k/RG)
1
OUTPUT
Voltage
MIN
G = 1000, RS = 0
GAIN
Gain Equation
Range of Gain
Gain Error
Slew Rate
Settling Time,
INA114AP, AU
MIN
0.01
0.02
0.05
0.5
2
25
0.0001
0.0005
0.0005
0.002
10000
0.05
0.4
0.5
1
10
100
0.001
0.002
0.002
0.01
13.7
10.5
1.5
1000
+20/15
40
40
80
1
100
10
1
0.6
18
20
120
1100
20
15
2.2
18
3
85
125
0.5
0.7
2
10
0.002
0.004
0.004
0.02
V/V
V/V
%
%
%
%
ppm/C
ppm/C
% of FSR
% of FSR
% of FSR
% of FSR
V
V
V
pF
mA
MHz
kHz
kHz
kHz
V/s
s
s
s
s
s
V
mA
C
C
C/W
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
INA114
ELECTROSTATIC
DISCHARGE SENSITIVITY
PIN CONFIGURATIONS
P Package
8-Pin DIP
Top View
RG
RG
VIN
V+
+
IN
VO
Ref
U Package
SOL-16 Surface-Mount
Top View
NC
16 NC
RG
15 RG
NC
14 NC
VIN
13 V+
V+IN
12 Feedback
NC
11 VO
10 Ref
NC
PACKAGE/ORDERING INFORMATION
PRODUCT
PACKAGE
PACKAGE
DRAWING
NUMBER(1)
INA114AP
INA114BP
INA114AU
INA114BU
006
006
211
211
TEMPERATURE
RANGE
40C to +85C
40C to +85C
40C to +85C
40C to +85C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
NC
INA114
GAIN vs FREQUENCY
140
G = 100, 1k
Gain (V/V)
1k
100
10
120
G = 10
100
G = 1k
80
G = 100
60
G = 10
40
G=1
20
0
10
100
10k
100k
VO
VCM
(Any Gain)
A3 Output
Swing Limit
Lim
it
O ed by
utpu
A
t Sw 2
ing
10
A3 + Output
Swing Limit
by A 1 g
in
ited
Lim put Sw
t
u
O
10
120
100
G = 1000
80
G = 100
G = 10
60
G=1
40
20
0
15
10
100
1k
100k
10k
Frequency (Hz)
G = 100
120
G = 1000
100
G = 10
G=1
80
1M
140
Limit
+ Ou ed by A
tput
Swin2
g
140
100k
VD/2
15
15
10k
VD/2
10
1k
Frequency (Hz)
100
Frequency (Hz)
y A1
ed b
Limit ut Swing
p
t
u
+O
10
10
1M
15
1k
60
40
20
0
1M
1k
100
G=1
G = 10
10
G = 100, 1000
G = 1000
BW Limit
1
10
100
1k
10k
100k
1M
Frequency (Hz)
100
Frequency (Hz)
INA114
10
1k
10k
(CONT)
1000
1200
800
600
0.01%
400
0.1%
200
0
0
2
4
6
10
100
1000
30
45
60
75
90
105
120
3
2
1
IB
0
IOS
1
1
0
1
G=1
G = 10
G = 100
2
40
15
10
35
60
3
45
85
Temperature (C)
15
30
45
Both Inputs
2
|Ib1| + |Ib2|
One Input
1
Over-Voltage
Protection
Over-Voltage
Protection
Normal
Operation
1
2
15
32
30
G = 1000
15
Gain (V/V)
G 100
2
One Input
3
45
28
G = 1, 10
24
G = 100
20
16
G = 1000
12
8
4
Both Inputs
30
15
0
0
15
30
10
45
100
1k
10k
100k
1M
Frequency (Hz)
INA114
(CONT)
0.8
0.6
0.4
0.2
0
75
50
25
25
50
75
100
15
|ICL|
15
60
85
2.4
2.2
2.0
2.6
120
2.5
100
80
2.4
Power Dissipation
60
2.3
Quiescent Current
2.2
40
2.1
20
2.0
50
25
25
50
75
100
125
12
15
0
18
Temperature (C)
16
16
VS = 15V
12
VS = 15V
14
14
35
Temperature (C)
2.6
VS = 11.4V
10
8
6
4
12
VS = 11.4V
10
8
6
4
VS = 2.25V
2
0
75
10
Temperature (C)
+|ICL|
20
10
40
125
2.8
1.8
75
25
50
25
25
50
75
100
0
75
125
Temperature (C)
50
25
25
50
Temperature (C)
INA114
VS = 2.25V
75
100
125
1.0
(CONT)
+10V
+100mV
0
10V
200mV
+10V
+200mV
10V
200mV
0.1V/div
1 s/div
INA114
APPLICATION INFORMATION
Figure 1 shows the basic connections required for operation
of the INA114. Applications with noisy or high impedance
power supplies may require decoupling capacitors close to
the device pins as shown.
G = 1 + 50 k
RG
NOISE PERFORMANCE
The INA114 provides very low noise in most applications.
For differential source impedances less than 1k, the INA103
may provide lower noise. For source impedances greater
than 50k, the INA111 FET-input instrumentation amplifier may provide lower noise.
(1)
The 50k term in equation (1) comes from the sum of the
two internal feedback resistors. These are on-chip metal film
resistors which are laser trimmed to accurate absolute val-
V+
0.1F
Pin numbers are
for DIP packages.
VIN
Over-Voltage
Protection
7
INA114
A1
25k
)
VO = G (VIN VIN
25k
25k
G=1+
6
A3
RG
50k
RG
25k
Load
VO
+
VIN
Over-Voltage
Protection
A2
25k
DESIRED
GAIN
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000
RG
()
NEAREST 1% RG
()
No Connection
50.00k
12.50k
5.556k
2.632k
1.02k
505.1
251.3
100.2
50.05
25.01
10.00
5.001
No Connection
49.9k
12.4k
5.62k
2.61k
1.02k
511
249
100
49.9
24.9
10
4.99
0.1F
IN
RG
V+
IN
INA114
25k
INA114
Ref
VO
OFFSET TRIMMING
The INA114 is laser trimmed for very low offset voltage and
drift. Most applications require no external offset adjustment. Figure 2 shows an optional circuit for trimming the
output offset voltage. The voltage applied to Ref terminal is
summed at the output. Low impedance must be maintained
at this node to assure good common-mode rejection. This is
achieved by buffering trim voltage with an op amp as
shown.
VO
RG
VIN
INA114
47k
47k
Thermocouple
VIN
Microphone,
Hydrophone
etc.
INA114
100A
1/2 REF200
Ref
OPA177
10mV
Adjustment Range
INA114
V+
10k
100
10k
INA114
100
Center-tap provides
bias current return.
100A
1/2 REF200
INA114
VCM
V+
G VD
2
INA114
Over-Voltage
Protection
A1
25k
VD
2
25k
G=1+
25k
A3
RG
50k
RG
VO = G VD
25k
VD
2
A2
Over-Voltage
Protection
VCM
25k
VCM +
25k
G VD
2
Surface-mount package
version only.
Output
Sense
VIN
RG
Surface-mount package
version only.
VIN
C1
1000pF
INA114
RG
Ref
+
VIN
Output
Sense
Load
OPA633
IL: 100mA
INA114
180
Ref
+
VIN
RL
VIN
22.1k
22.1k
+
VIN
511
INA114
Ref
100
OPA602
INA114
10
For G = 100
RG = 511 // 2(22.1k)
effective RG = 505
VO
V+
V+
REF200
100A
RTD
RG
VO
INA114
Ref
RZ
3
VO = 0V at RRTD = RZ
10.0V
6
REF102
R1
27k
1N4148
(1)
Cu
R2
5.23k
R4
80.6k
(2)
R7
1M
INA114
K
Cu
VO
Ref
R5
50
R3
100
R6
100
Zero Adj
ISA
TYPE
MATERIAL
SEEBECK
COEFFICIENT
(V/C)
R2
(R3 = 100)
R4
(R5 + R6 = 100)
Chromel
Constantan
58.5
3.48k
56.2k
Iron
Constantan
50.2
4.12k
64.9k
Chromel
Alumel
39.4
5.23k
80.6k
Copper
Constantan
38.0
5.49k
84.5k
11
INA114
2.8k
LA
RA
RG/2
INA114
VO
Ref
2.8k
G = 10
390k
1/2
OPA2604
1/2
OPA2604
RL
10k
390k
+10V
VIN
+
RG
Ref
G = 500
Bridge
RG
100
VO
INA114
C1
0.1F
R1
1M
VO
INA114
Ref
OPA602
f3dB =
1
2R1C1
= 1.59Hz
VIN
R1
RG
IO =
VIN
G
R
INA114
+
Ref
IB
A1
IO
Load
A1
IB Error
OPA177
OPA602
OPA128
1.5nA
1pA
75fA
INA114
12
www.ti.com
10-Jun-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Eco Plan
Lead/Ball Finish
(2)
(6)
(3)
Op Temp (C)
Device Marking
(4/5)
INA114AP
ACTIVE
PDIP
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
INA114AP
INA114APG4
ACTIVE
PDIP
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
INA114AP
INA114AU
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
INA114AU
INA114AU/1K
ACTIVE
SOIC
DW
16
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
INA114AU
INA114AU/1KE4
ACTIVE
SOIC
DW
16
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
INA114AU
INA114AUE4
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
INA114AU
INA114AUG4
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
INA114AU
INA114BP
ACTIVE
PDIP
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
INA114BP
INA114BPG4
ACTIVE
PDIP
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
INA114BP
INA114BU
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
INA114BU
INA114BU/1K
ACTIVE
SOIC
DW
16
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
INA114BU
INA114BU/1KE4
ACTIVE
SOIC
DW
16
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
INA114BU
(1)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Addendum-Page 1
Samples
www.ti.com
10-Jun-2014
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
26-Jan-2013
Device
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
INA114AU/1K
SOIC
DW
16
1000
330.0
16.4
10.75
10.7
2.7
12.0
16.0
Q1
INA114BU/1K
SOIC
DW
16
1000
330.0
16.4
10.75
10.7
2.7
12.0
16.0
Q1
Pack Materials-Page 1
26-Jan-2013
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
INA114AU/1K
SOIC
DW
16
1000
367.0
367.0
38.0
INA114BU/1K
SOIC
DW
16
1000
367.0
367.0
38.0
Pack Materials-Page 2
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