Beruflich Dokumente
Kultur Dokumente
INA3
26
INA326
INA327
27
DESCRIPTION
PRECISION
LOW OFFSET: 100V (max)
LOW OFFSET DRIFT: 0.4V/C (max)
EXCELLENT LONG-TERM STABILITY
VERY-LOW 1/f NOISE
The INA326 and INA327 (with shutdown) are high-performance, low-cost, precision instrumentation amplifiers with
rail-to-rail input and output. They are true single-supply
instrumentation amplifiers with very low DC errors and input
common-mode ranges that extends beyond the positive and
negative rails. These features make them suitable for applications ranging from general-purpose to high-accuracy.
APPLICATIONS
LOW-LEVEL TRANSDUCER AMPLIFIER FOR
BRIDGES, LOAD CELLS, THERMOCOUPLES
WIDE DYNAMIC RANGE SENSOR
MEASUREMENTS
HIGH-RESOLUTION TEST SYSTEMS
WEIGH SCALES
MULTI-CHANNEL DATA ACQUISITION
SYSTEMS
MEDICAL INSTRUMENTATION
GENERAL-PURPOSE
FEATURES
Precision, 0.4V/C Drift, Specified 40C to +125C
50V VOS, 0.5nA IB, 115dB CMR, 3mA IQ, 0.25V/C Drift
50V VOS, 1nA IB, 120dB CMR, 385A IQ, 0.5V/C Drift
250V VOS, 10nA IB, 85A IQ, Rail-to-Rail Output, 3V/C Drift
50V VOS, 2nA IB, 125dB CMR, 750A IQ, 0.5V/C Drift
500V VOS, 0.5pA IB, 94dB CMRR, 60A IQ, Rail-to-Rail Output
V+
2
1
VIN
R1
VIN+
7
4
6
INA326
8
3
R2
VO
G = 2(R2/R1)
C2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2001-2004, Texas Instruments Incorporated
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PACKAGE/ORDERING INFORMATION(1)
PRODUCT
PACKAGE-LEAD
PACKAGE
DESIGNATOR
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
MARKING
ORDERING
NUMBER
TRANSPORT
MEDIA, QUANTITY
MSOP-8
DGK
40C to +85C
B26
"
"
"
"
INA326EA/250
INA326EA/2K5
MSOP-10
DGS
40C to +85C
B27
"
"
"
"
INA327EA/250
INA327EA/2K5
INA326
"
INA327
"
NOTE: (1) For the most current package and ordering information, download the latest version of this data sheet and see the Package Option Addendum located
at the end of the data sheet.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
PIN CONFIGURATION
Top View
INA326
INA327
R1
R1
R1
10 R1
VIN
V+
VIN
V+
VIN+
VO
VIN+
VO
R2
R2
(Connect to V+)
Enable
MSOP- 8
MSOP- 10
INA326, INA327
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SBOS222D
BOLDFACE limits apply over the specified temperature range, TA = 40C to +85C
At TA = +25C, RL = 10k, G = 100 (R1 = 2k, R2 = 100k), external gain set resistors, and IACOMMON = VS /2, with external equivalent filter corner of 1kHz, unless
otherwise noted.
INA326EA, INA327EA
PARAMETER
CONDITION
INPUT
Offset Voltage, RTI
VOS
VS = +5V, VCM = VS /2
Over Temperature
vs Temperature
dVOS/dT
vs Power Supply
PSR
VS = +2.7V to +5.5V, VCM = VS /2
Long-Term Stability
Input Impedance, Differential
Common-Mode
Input Voltage Range
Safe Input Voltage
Common-Mode Rejection
CMR VS = +5V, VCM = (V) 0.02V to (V+) + 0.1V
Over Temperature
INPUT BIAS CURRENT
Bias Current
vs Temperature
Offset Current
IB
VCM = VS /2
VS = +5V
IOS
VS = +5V
NOISE
Voltage Noise, RTI
f = 10Hz
f = 100Hz
f = 1kHz
f = 0.01Hz to 10Hz
Voltage Noise, RTI
f = 10Hz
f = 100Hz
f = 1kHz
f = 0.01Hz to 10Hz
Current Noise, RTI
f = 1kHz
f = 0.01Hz to 10Hz
Output Ripple, VO Filtered(2)
20
100
(V+) + 0.1
(V+) + 0.5
|| pF
|| pF
V
V
dB
dB
3
See Note (1)
1010 || 2
1010 || 14
(V) 0.02
(V) 0.5
100
94
V
V/C
0.1
20
UNITS
124
0.4
114
0.2
See Typical Characteristics
0.2
V/V
nA
nA
33
33
33
0.8
nV/ Hz
nV/ Hz
nV/ Hz
Vp-p
120
97
97
4
nV/ Hz
nV/ Hz
nV/ Hz
Vp-p
0.15
4.2
See Applications Information
pA/ Hz
pAp-p
G = 2(R2/R1)
< 0.1
0.08
6
0.004
ISC
INTERNAL OSCILLATOR
Frequency of Auto-Correction
Accuracy
BW
G = 1 to 1k
SR
VS = +5V, All Gains, CL = 100pF
tS 1kHz Filter, G = 1 to 1k, VO = 2V step, CL = 100pF
10kHz Filter, G = 1 to 1k, VO = 2V step, CL = 100pF
1kHz Filter, 50% Output Overload, G = 1 to 1k
10kHz Filter, 50% Output Overload, G = 1 to 1k
INA326, INA327
SBOS222D
MAX
OUTPUT
Voltage Output Swing from Rail
FREQUENCY RESPONSE
Bandwidth(4), 3dB
Slew Rate(4)
Settling Time(4), 0.1%
0.01%
0.1%
0.01%
Overload Recovery(4)
TYP
GAIN
Gain Equation
Range of Gain
Gain Error(3)
vs Temperature
Nonlinearity
Over Temperature
Capacitive Load Drive
Short-Circuit Current
MIN
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75
75
5
10
> 10000
0.2
25
0.01
V/V
%
ppm/C
% of FS
500
25
mV
mV
mV
pF
mA
90
20
kHz
%
1
Filter Limited
0.95
1.3
130
160
30
5
kHz
ms
ms
s
s
s
s
At TA = +25C, RL = 10k, G = 100 (R1 = 2k, R2 = 100k), external gain set resistors, and IACOMMON = VS /2, with external equivalent filter corner of 1kHz, unless
otherwise noted.
INA326EA, INA327EA
PARAMETER
POWER SUPPLY
Specified Voltage Range
Quiescent Current
Over Temperature
CONDITION
TYP
MAX
UNITS
2.4
+5.5
3.4
3.7
V
mA
mA
0.25
V
V
s
s
A
+2.7
IQ
SHUTDOWN
Disable (Logic Low Threshold)
Enable (Logic High Threshold)
Enable Time(5)
Disable Time
Shutdown Current and Enable Pin Current
TEMPERATURE RANGE
Specified Range
Operating Range
Storage Range
Thermal Resistance
MIN
1.6
75
100
2
VS = +5V, Disabled
40
40
65
JA
5
+85
+125
+150
150
C
C
C
C/W
NOTES: (1) 1000-hour life test at 150C demonstrated randomly distributed variation in the range of measurement limitsapproximately 10V. (2) See Applications
Information section, and Figures 1 and 3. (3) Does not include error and TCR of external gain-setting resistors. (4) Dynamic response is limited by filtering. Higher
bandwidths can be achieved by adjusting the filter. (5) See Typical Characteristics, Input Offset Voltage vs Warm-Up Time.
INA326, INA327
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SBOS222D
TYPICAL CHARACTERISTICS
At TA = 25C, VS = +5V, Gain = 100, and RL = 10k with external equivalent filter corner of 1kHz, unless otherwise noted.
GAIN vs FREQUENCY
1kHz FILTER
GAIN vs FREQUENCY
10kHz FILTER
80
80
60
60
G = 1k
G = 1k
40
Gain (dB)
Gain (dB)
40
G = 100
20
G = 10
0
G = 100
20
G = 10
0
G=1
G=1
20
20
40
40
10
100
1k
10k
Frequency (Hz)
100k
1M
10
100
1k
10k
Frequency (Hz)
100k
1M
160
160
G = 1k
140
140
G = 100
120
CMR (dB)
100
G = 10
80
G=1
G = 1k
100
80
G = 100
60
60
40
40
G=1
20
20
10
100
1k
10k
Frequency (Hz)
100k
1M
10
G = 100, 1k
100
G = 10
80
G=1
60
40
Filter Frequency
10kHz
1kHz
20
100
1k
10k
Frequency (Hz)
100k
1M
120
PSR (dB)
G = 10
10k
1
Current Noise
(all gains)
1k
0.1
G=1
G = 10
100
0.01
G = 100
G = 1000
10
10
100
1k
Frequency (Hz)
10k
100k
INA326, INA327
SBOS222D
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CMR (dB)
120
0.001
1
10
100
Frequency (Hz)
1k
10k
Filter
Settling
Time
Device
Turn- On
Time
(75s)
1
Turn- On Time (ms)
Device
Turn- On
Time
Filter
Settling
Time
0.1
0.2
0.3
Warm- Up Time (ms)
0.4
50mV/div
1kHz Filter
50mV/div
1kHz Filter
10kHz Filter
500s/div
500s/div
2V/div
200nV/div
1kHz Filter
10kHz Filter
10s/div
500s/div
INA326, INA327
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SBOS222D
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
10,000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10,000
Population
Population
1000
900
800
700
600
500
400
300
200
100
0
100
200
300
400
500
600
700
800
900
1000
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
Population
Population
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
0.26
0.28
0.30
0.32
0.34
0.36
0.38
0.40
100
90
80
70
60
50
40
30
20
10
0
10
20
30
40
50
60
70
80
90
100
Population
Population
INA326, INA327
SBOS222D
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100.000
110
31.600
120
1.000
130
0.316
140
0.100
150
0.030
160
0.010
170
0.003
200
180
160
140
120
100
80
60
40
20
0
20
40
60
80
100
120
140
160
180
200
180
0
200k
400k
600k
Frequency (Hz)
1.5
2.5
1.0
IB
0.5
VS = +2.7V
IB (nA)
IQ (mA)
2.0
1.5
0
0.5
1.0
1.0
0.5
0.001
1M
3.0
0
50
800k
IB+
1.5
25
25
50
Temperature (C)
75
100
125
2.0
50
25
25
50
Temperature (C)
75
100
125
INA326, INA327
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SBOS222D
VOUT (Vrms)
Population
VOUT (dBV)
APPLICATIONS INFORMATION
G=2
The INA326 uses a unique internal topology to achieve excellent Common-Mode Rejection (CMR). Unlike conventional
instrumentation amplifiers, CMR is not affected by resistance
in the reference connections or sockets. See Inside the
INA326 for further detail. To achieve best high-frequency
CMR, minimize capacitance on pins 1 and 8.
R1
()
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000
400k
400k
400k
200k
100k
40k
20k
10k
4k
2k
2k
2k
2k
2k
2k
2k
DESIRED
GAIN
R1
()
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000
400k
400k
400k
400k
200k
80k
40k
20k
8k
4k
2k
2k
2k
2k
2k
2k
R1 = VIN, MAX/12.5A
5
2.5
1
1
1
1
1
1
1
1
0.5
0.2
0.1
0.05
0.02
0.01
2.5V
+2.5V
0.1F
5
2.5
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.1
0.05
0.02
0.01
VIN
R1
4
6
INA326
RO
VO 100
VO Filtered
CO(1)
1F
8
5
VIN+
G = 2(R2/R1)
fO = 1kHz
C2(1)
R2
IACOMMON(2)
(1) C2 and CO combine to form a 2-pole response that is 3dB at 1kHz.
Each individual pole is at 1.5kHz.
(2) Output voltage is referenced to IACOMMON (see text).
V+
R2 || C2
( || nF)
20k ||
40k ||
100k ||
200k ||
200k ||
200k ||
200k ||
200k ||
200k ||
200k ||
200k ||
500k ||
1M ||
2M ||
5M ||
10M ||
(2)
R2 || C2
( || nF)
20k ||
40k ||
100k ||
100k ||
100k ||
100k ||
100k ||
100k ||
100k ||
100k ||
200k ||
500k ||
1M ||
2M ||
5M ||
10M ||
(1)
DESIRED
GAIN
R2
R1
0.1F
VIN
R1
4
6
INA326
RO
VO 100
VIN+
VO Filtered
CO(1)
1F
R2
G = 2(R2/R1)
fO = 1kHz
(3)
C2(1)
IACOMMON(2)
NOTES: (1) C2 and CO combine to form a 2-pole response that is 3dB at 1kHz. Each individual pole is at 1.5kHz. (2) Output voltage is referenced to
IACOMMON (see text). (3) Output offset voltage required for measurement near zero (see Figure 6).
FIGURE 1. Basic Connections. NOTE: Connections for INA327 differsee Pin Configuration for detail.
INA326, INA327
SBOS222D
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INA327 PIN 5
OFFSET VOLTAGE, DRIFT, AND CIRCUIT VALUES
As with other multi-stage instrumentation amplifiers, inputreferred offset voltage depends on gain and circuit values. The
specified offset and drift performance is rated at R1 = 2k,
R2 = 100k, and VS = 2.5V. Offset voltage and drift for other
circuit values can be estimated from the following equations:
VOS = 10V + (50nA)(R2)/G
(3)
(4)
DYNAMIC PERFORMANCE
The typical characteristic Gain vs Frequency shows that the
INA326 has nearly constant bandwidth regardless of gain.
This results from the bandwidth limiting from the recommended filters.
NOISE PERFORMANCE
Internal auto-correction circuitry eliminates virtually all 1/f
noise (noise that increases at low frequency) in gains of 100
or greater. Noise performance is affected by gain-setting
resistor values. Follow recommendations in the Setting
Gain section for best performance.
Total noise is a combination of input stage noise and output
stage noise. When referred to the input, the total mid-band
noise is:
VN = 33nV / Hz +
800nV / Hz
G
(5)
V+
1k
G = 1000
100
10
G = 100
G = 10
G=1
2A
Enable
6
10
100
1k
Required Filter Cutoff Frequency (Hz)
10k
10
INA326, INA327
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SBOS222D
Applications sensitive to the spectral characteristics of highfrequency noise may require consideration of the spurious
frequencies generated by internal clocking circuitry. Spurs
occur at approximately 90kHz and its harmonics (see typical
characteristic Input-Referred Ripple Spectrum) which may
be reduced by additional filtering below 1kHz.
Thermocouple
INA326
5
HIGH-FREQUENCY NOISE
C2 and CO form filters to reduce internally generated autocorrection circuitry noise. Filter frequencies can be chosen to
optimize the trade-off between noise and frequency response of the application, as shown in Figure 3. The cutoff
frequencies of the filters are generally set to the same
frequency. Figure 3 shows the typical output noise for four
gains as a function of the 3dB cutoff frequency of each filter
response. Small signals may exhibit the addition of internally
generated auto-correction circuitry noise at the output. This
noise, combined with broadband noise, becomes most evident in higher gains with filters of wider bandwidth.
INPUT PROTECTION
The inputs of the INA326 are protected with internal diodes
connected to the power-supply rails. These diodes will clamp
the applied signal to prevent it from damaging the input
circuitry. If the input signal voltage can exceed the power
supplies by more than 0.5V, the input signal current should
be limited to less than 10mA to protect the internal clamp
diodes. This can generally be done with a series input
resistor. Some signal sources are inherently current-limited
and do not require limiting resistors.
FILTERING
INPUT BIAS CURRENT RETURN PATH
The input impedance of the INA326 is extremely high
approximately 1010. However, a path must be provided for
the input bias current of both inputs. This input bias current is
approximately 0.2nA. High input impedance means that this
input bias current changes very little with varying input voltage.
Input circuitry must provide a path for this input bias current
for proper operation. Figure 4 shows provision for an input
bias current path in a thermocouple application. Without a
bias current path, the inputs will float to an undefined potential and the output voltage may not be valid.
Certain capacitor types greater than 0.1F may have dielectric absorption effects that can significantly increase settling
time in high-accuracy applications (settling to 0.01%). Polypropylene, polystyrene, and polycarbonate types are generally
good. Certain high-K ceramic types may produce slow
settling tails. Settling time to 0.1% is not generally affected
by high-K ceramic capacitors. Electrolytic types are not
recommended for C2 and CO.
INA326, INA327
SBOS222D
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11
R2
R1
Amplifiers A1, A2, and their associated mirrors are powered from internal charge-pumps that provide voltage
supplies that are beyond the positive and negative supply
rails. As a result, the voltage developed on R2 can actually
swing 20mV below the negative power-supply rail, and
100mV above the positive supply rail. A3 provides a
buffered output of the voltage on R2. A3s input stage is
also operated from the charge-pumped power supplies for
true rail-to-rail operation.
V
0.1F
Current Mirror
INA326
IR1
2
VIN
IR1
A1
Current Mirror
IR1
R1
Current Mirror
IR1
8
VIN+
2IR1
2IR1
A2
2IR1
A3
2IR1
Current Mirror
VO
2IR1
5
R2
C2
IACOMMON
12
INA326, INA327
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SBOS222D
APPLICATION CIRCUITS
2
R0
1
R1
INA326
VO
VREF
C0
3
R2
VREF
2
1
INA326
2k
RO
100
A/D
Converter
CO
1F
3
200k
C2
200k
+5V
RS must be chosen
so that the input voltage
does not exceed 100mV
beyond the rail.
RS
IL
2k
1
R1
INA326
8
RO
100
CO
1F
3
NOTE: Connection point
of V+ will include (
) or
exclude (
) quiescent
current in the measurement
as desired. Output offset
required for measurements
near zero (see Figure 6).
R2
RL
VO
C2
VO = 2(IL RS)
R2
R1
INA326, INA327
SBOS222D
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13
+5V
2
7
1
R1
INA326
R2
2k
IL
VO = 2(IL RS)
VO
8
3
RO
100
CO
1F
C2
R2
R1
RL
RS
1nF
RF = 100k
NOTE: 0.2% accuracy. Current shunt
monitor circuit can be designed for 250V supply
with appropriate selection of high- voltage FET.
+5V
2
3
7
OPA336PA
ZVN4525G
(zetex)
IL
+
RS
VS = 0mV
to 50mV max
VCC
INA326
GND
4
RF
RI
RPULL- DOWN
200k
8.45k
(High- Voltage
n- Channel
7
FET)
1
RI = 2k
VO = 2(IL RS)
RSTART
100k
RL
ZMM5231BDICT
5.1V
0.1F
48V
+48V
+
3
VSHUNT = 0mV
to 50mV
RSHUNT
RI
2k
VCC
INA326
1
GND
Load
ZMM5231BDICT
5.1V
0.1F
ZVP4525
(zetex)
(High- Voltage
p- Channel FET)
2
75k
8.45k
+5V
7
OPA336PA
1nF
VO = 0.1V to 4.9V
4
49.9k
165k
14
INA326, INA327
www.ti.com
SBOS222D
2
+
VIN 2k
INA326
8
+5V
3
1nF
100k
2
DAC
VDAC = 0.075V
to 4.925V
+15V
1
R1
VD
INA326
NC(1)
OPA277
VO
(2)
VCM
15V
+1.8V to +5V
R2
C2
+5V
Logic
1
R1
INA327
10
3
6 Enable
8
4
1nF
R2(1)
FIGURE 14. Output from Pin 5 to Allow Swing Beyond the Rail.
+5V
1
R3
INA327
6 Enable
8
VO
10
4
R4
DAC
R1
200k
+5V
VREF = +2.5V
2
1
R5
INA327
IOUT =
R1
50nA
INA326
8
((+VREF) (VDAC))
5
4
CF
RF = 10k
6 Enable
8
10
3
+5V
(1)
4
1nF
R6(1)
INA326, INA327
SBOS222D
www.ti.com
15
VREF = +2.5V
+2.5V
DAC
INA326
RI = 200k
8
4
10k
2.5V
IOUT = 2
VREF VDAC
200k
49.9
IO
1+
10k
49.9
RL
0.1F
IO = 5mA with
0.1A stability.
RI = 1k
RF = 100k
VI
+30V
20k
2
3
+5V
7
OPA551
4
IB
2k
INA326
5
8
3
30V
10nF
20k
VO = 27V
VOS = 100V at 200mA
G=
RF
RI
= 100V/V
NOTES: (1) The OPA551 is a 60V op amp. (2) The INA326 does not require a
negative supply to correct for negative VOS values from the high-voltage op amp.
(3) Voltage offset contribution of IB (OPA551) is 100pA 2k = 0.2V.
16
INA326, INA327
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SBOS222D
INA326, INA327
SBOS222D
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17
R6
9.53k
R7
1k
POT
R11
14.3k
IN
R9
2k
IN+
C6
10F
VS
VBIAS
R8
100k
C2
470nF
INA326
7
4
V+
V
0.1F
REF1004- 2.5
D1
R10
1k
Bias Generator
Gain = 100V/V
Set Temp
RTHERM
10k
R12
15k
R13
20
Error Amplifier
VO
R4
20k
R5
20k
C5
1nF
VBIAS
VS
C1
1nF
V+
1/2
OPA2340
R14
10k
VS
R15
200
C7
22nF
R16
Loop Gain
2k
Adjust
POT
Common
+5V Input
VBIAS
1/4
OPA4340
R18
10k
R20
5k
POT
C4
10 F
VS
R2
100k
VBIAS
VBIAS
RINT
10M
R19
100k
CDIFF
1F
VBIAS
R17
5k
POT
1/4
OPA4340
RDIFF
1M
Differentiator
TC: 100ms to 1s
1/4
OPA4340
Proportional
R1
100k
V+
1/4
OPA4340
VS
C3
1nF
CINT
1F
Integrator
TC: 1s to 10s
R22
10k
R21
10k
R23
10k
VBIAS
1/2
OPA2340
R25
10k
C8
0.1F
Summing Amplifier
Common
Output to
TEC
Driver
www.ti.com
10-Jun-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Eco Plan
Lead/Ball Finish
(2)
(6)
(3)
Op Temp (C)
Device Marking
(4/5)
INA326EA/250
ACTIVE
VSSOP
DGK
250
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
B26
INA326EA/250G4
ACTIVE
VSSOP
DGK
250
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
B26
INA326EA/2K5
ACTIVE
VSSOP
DGK
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
B26
INA326EA/2K5G4
ACTIVE
VSSOP
DGK
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
B26
INA327EA/250
ACTIVE
VSSOP
DGS
10
250
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
B27
INA327EA/250G4
ACTIVE
VSSOP
DGS
10
250
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
B27
INA327EA/2K5
ACTIVE
VSSOP
DGS
10
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
B27
(1)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
Samples
www.ti.com
10-Jun-2014
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
26-Jan-2013
Device
INA326EA/250
VSSOP
DGK
INA326EA/2K5
VSSOP
INA327EA/250
VSSOP
INA327EA/2K5
VSSOP
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
250
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
DGK
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
DGS
10
250
180.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
DGS
10
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
Pack Materials-Page 1
26-Jan-2013
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
INA326EA/250
VSSOP
DGK
250
366.0
364.0
50.0
INA326EA/2K5
VSSOP
DGK
2500
366.0
364.0
50.0
INA327EA/250
VSSOP
DGS
10
250
210.0
185.0
35.0
INA327EA/2K5
VSSOP
DGS
10
2500
367.0
367.0
35.0
Pack Materials-Page 2
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