BUT11F/11AF

BUT11F/11AF
High Voltage Power Switching Applications

TO-220F

NPN Silicon Transistor

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings TC=25C unless otherwise noted

Symbol
VCBO

VCEO

Parameter

Value

Units

: BUT11F
: BUT11AF

850
1000

V
V

Collector-Emitter Voltage
: BUT11F
: BUT11AF

400
450

V
V

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

*Collector Current (Pulse)

10

IB

Base Current (DC)

IBP

*Base Current (Pulse)

PC

Collector Dissipation (TC=25C)

40

TJ

Junction Temperature

150

TSTG

Storage Temperature

- 65 ~ 150

Electrical Characteristics TC=25C unless otherwise noted

Symbol
VCEO(sus)

ICES

Parameter
* Collector-Emitter Sustaining Voltage
: BUT11F
: BUT11AF

Test Condition
IC = 100mA, IB = 0

Min.

Typ.

Max.

Units

400
450

V
V

Collector Cut-off Current

: BUT11F
: BUT11AF

VCE = 850V, VBE = 0

VCE = 1000V, VBE = 0

1
1

mA
mA

IEBO

Emitter Cut-off Current

VBE = 9V, IC = 0

10

mA

VCE(sat)

Collector-Emitter Saturation Voltage

: BUT11F
: BUT11AF

IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A

1.5
1.5

V
V

Base-Emitter Saturation Voltage

: BUT11F
: BUT11AF

IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A

1.3
1.3

V
V

0.8

VBE(sat)

tON

Turn On Time

tSTG

Storage Time

tF

Fall Time

VCC = 250V, IC = 2.5A

IB1 = -IB2 = 0.5A
RL = 100

* Pulsed: pulsed duration = 300s, duty cycle = 1.5%

Thermal Characteristics TC=25C unless otherwise noted

Symbol
RjC

Parameter
Thermal Resistance, Junction to Case

2001 Fairchild Semiconductor Corporation

Typ

Max
3.125

Units
C/W
Rev. A2, August 2001

BUT11F/11AF

Typical Characteristics
1000

10

VCE(sat)[V], SATURATION VOLTAGE

hFE, DC CURRENT GAIN

VCE = 5V

100

10

IC = 5 IB

0.1

VCE(sat)

0.01
0.01

1
0.01

0.1

0.1

10

10

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage

10

10

IC[A], COLLECTOR CURRENT

VBE(sat)[V], SATURATION VOLTAGE

IC = 5 IB

VBE(sat)

0.1

0.01
0.01

0.1

IC[A], COLLECTOR CURRENT

200

400

600

800

1000

1200

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Figure 4. Reverse Biased Safe Operating Area

80

10

70

DC

0.1

BUT11AF
BUT11F
10

100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

2001 Fairchild Semiconductor Corporation

60

50

40

30

20

10

0.01
1

PC[W], POWER DISSIPATION

Ic MAX (Continuous)

IC[A], COLLECTOR CURRENT

BUT11AF

BUT11F

10

1000

25

50

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 6. Power Derating

Rev. A2, August 2001

BUT11F/11AF

Package Demensions

3.30 0.10

TO-220F
10.16 0.20

2.54 0.20

3.18 0.10

(7.00)

(1.00x45)

15.87 0.20

15.80 0.20

6.68 0.20

(0.70)

0.80 0.10
)
0

(3

9.75 0.30

MAX1.47

#1
+0.10

0.50 0.05

2.54TYP
[2.54 0.20]

2.76 0.20

2.54TYP
[2.54 0.20]

9.40 0.20

4.70 0.20

0.35 0.10

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation

Rev. A2, August 2001

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation

Rev. H3