IRF620, SiHF620

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

Dynamic dV/dt Rating

200

RDS(on) ()

VGS = 10 V

RoHS*

Qg (Max.) (nC)

14

Fast Switching

Qgs (nC)

3.0

Ease of Paralleling

7.9

Simple Drive Requirements

Qgd (nC)
Configuration

Single

DESCRIPTION

TO-220AB

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

COMPLIANT

Compliant to RoHS Directive 2002/95/EC

Available

Repetitive Avalanche Rated

0.80

S
S
N-Channel MOSFET

ORDERING INFORMATION
Package

TO-220AB
IRF620PbF
SiHF620-E3
IRF620
SiHF620

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

200

Gate-Source Voltage

VGS

20

Continuous Drain Current

VGS at 10 V

TC = 25 C
TC = 100 C

Pulsed Drain Currenta

ID
IDM

Linear Derating Factor

UNIT
V

5.2
3.3

18
0.40

W/C

Single Pulse Avalanche Energyb

EAS

110

mJ

Repetitive Avalanche Currenta

IAR

5.2

Repetitive Avalanche Energya

EAR

5.0

mJ

Maximum Power Dissipation

TC = 25 C

Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

for 10 s
6-32 or M3 screw

PD

50

dV/dt

5.0

V/ns

TJ, Tstg

- 55 to + 150
300d

10

lbf in

1.1

Nm

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 C, L = 6.1 mH, Rg = 25 , IAS = 5.2 A (see fig. 12).
c. ISD 5.2 A, dI/dt 95 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91027
S11-0510-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF620, SiHF620
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

62

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

2.5

UNIT
C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage

VDS

VGS = 0 V, ID = 250 A

200

VDS/TJ

Reference to 25 C, ID = 1 mA

0.29

V/C

VGS(th)

VDS = VGS, ID = 250 A

2.0

4.0

Gate-Source Leakage

IGSS

VGS = 20 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 200 V, VGS = 0 V

25

VDS = 160 V, VGS = 0 V, TJ = 125 C

250

Drain-Source On-State Resistance

Forward Transconductance

RDS(on)
gfs

ID = 3.1 Ab

VGS = 10 V

VDS = 50 V, ID = 3.1 A

0.80

1.5

260

Dynamic
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5

VGS = 10 V

ID = 4.8 A, VDS = 160 V,

see fig. 6 and 13b

100

30

14

3.0

pF

nC

Gate-Drain Charge

Qgd

7.9

Turn-On Delay Time

td(on)

7.2

22

19

13

4.5

7.5

5.2

18

1.8

150

300

ns

0.91

1.8

Rise Time
Turn-Off Delay Time

tr
td(off)

Fall Time

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

VDD = 100 V, ID = 4.8 A,

Rg = 18 , RD = 20 , see fig. 10b

Between lead,
6 mm (0.25") from
package and center of
die contact

ns

nH
G

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 C, IS = 5.2 A, VGS = 0 Vb
TJ = 25 C, IF = 4.8 A, dI/dt = 100 A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91027

S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF620, SiHF620
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V

101

100

4.5 V

10-1

ID, Drain Current (A)

ID, Drain Current (A)

101 Top

150 C
100
25 C

10-1
20 s Pulse Width
VDS = 50 V

20 s Pulse Width
TC = 25 C

10-2
10-2

10-1

100

101

VDS, Drain-to-Source Voltage (V)

91027_01

10-1

10-2
91027_02

4.5 V

20 s Pulse Width
TC = 150 C
10-1

100

101

10

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

(Normalized)

ID, Drain Current (A)

100

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top

VGS, Gate-to-Source Voltage (V)

91027_03

Fig. 1 - Typical Output Characteristics, TC = 25 C

101

VDS, Drain-to-Source Voltage (V)

91027_04

3.0
2.5

ID = 4.8 A
VGS = 10 V

2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

TJ, Junction Temperature (C)

Fig. 2 - Typical Output Characteristics, TC = 150 C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91027

S11-0510-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.

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IRF620, SiHF620
Vishay Siliconix

750

Capacitance (pF)

600

ISD, Reverse Drain Current (A)

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd

450
Ciss

300

Coss
150
Crss

101

150 C

25 C

100

VGS = 0 V

0
100

101

0.5

VDS, Drain-to-Source Voltage (V)

91027_05

Operation in this area limited

by RDS(on)

VDS = 160 V

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

102

VDS = 100 V
VDS = 40 V

12

10 s

10
100 s

1 ms

1
10 ms
5

0
91027_06

12

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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0.1
0.1

15

QG, Total Gate Charge (nC)

TC = 25 C
TJ = 150 C
Single Pulse

For test circuit

see figure 13

1.5

1.3

Fig. 7 - Typical Source-Drain Diode Forward Voltage

ID = 4.8 A

16

1.0

VSD, Source-to-Drain Voltage (V)

91027_07

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

0.8

91027_08

10

102

103

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Document Number: 91027

S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF620, SiHF620
Vishay Siliconix

RD

VDS
VGS

6.0

D.U.T.

RG

+
- VDD

ID, Drain Current (A)

5.0
10 V

4.0

Pulse width 1 s
Duty factor 0.1 %

3.0

Fig. 10a - Switching Time Test Circuit

2.0
VDS

1.0

90 %
0.0
25

50

75

100

125

150

TC, Case Temperature (C)

91027_09

10 %
VGS
td(on)

Fig. 9 - Maximum Drain Current vs. Case Temperature

td(off) tf

tr

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

10

0 0.5
0.2
PDM

0.1
0.05
0.1

t1

0.02
0.01

Single Pulse
(Thermal Response)

t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC

10-2
10-5

10-4

10-3

10-2

0.1

10

t1, Rectangular Pulse Duration (s)

91027_11

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

L
Vary tp to obtain
required IAS

VDS

tp
VDD
D.U.T.

RG

+
-

IAS

V DD

VDS

10 V
tp

0.01

IAS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91027
S11-0510-Rev. B, 21-Mar-11

Fig. 12b - Unclamped Inductive Waveforms

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This datasheet is subject to change without notice.

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IRF620, SiHF620
Vishay Siliconix

EAS, Single Pulse Energy (mJ)

300
ID
2.3 A
3.3 A
Bottom 5.2 A
Top

250
200
150
100
50
0

VDD = 50 V
25

91027_12c

50

75

100

125

150

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.
50 k

QG

10 V

12 V

0.2 F
0.3 F

QGS

QGD

D.U.T.

VG

VDS

VGS
3 mA

Charge
IG
ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

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Fig. 13b - Gate Charge Test Circuit

Document Number: 91027

S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF620, SiHF620
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+

D.U.T.

Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Driver gate drive

P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91027.

Document Number: 91027

S11-0510-Rev. B, 21-Mar-11

www.vishay.com
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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
www.vishay.com

Vishay Siliconix

TO-220-1
MILLIMETERS

H(1)

L(1)

M*

b(1)

INCHES

DIM.

MIN.

MAX.

MIN.

MAX.

4.14

4.70

0.163

0.185

0.69

1.02

0.027

0.040

b(1)

1.14

1.73

0.045

0.068

0.36

0.61

0.014

0.024

14.33

15.85

0.564

0.624

9.96

10.52

0.392

0.414

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

0.43

1.40

0.017

0.055

H(1)

6.10

6.48

0.240

0.255
0.115

J(1)

2.41

2.92

0.095

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

3.53

3.94

0.139

0.155

2.59

3.00

0.102

0.118

ECN: X15-0003-Rev. A, 19-Jan-15

DWG: 6031
Notes
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
Outline conforms to JEDEC outline TO-220AB with exception
of dimension F

C
b
e
J(1)
e(1)

Document Number: 66542

1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 19-Jan-15

Legal Disclaimer Notice

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

Document Number: 91000