2SK3563

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

2SK3563
Switching Regulator Applications

Unit: mm

Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)

High forward transfer admittance: |Yfs| = 3.5S (typ.)
Low leakage current: IDSS = 100 A (VDS = 500 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

500

Drain-gate voltage (RGS = 20 k)

VDGR

500

Gate-source voltage

VGSS

30

(Note 1)

ID

Pulse (t = 1 ms)
(Note 1)

IDP

20

Drain power dissipation (Tc = 25C)

PD

35

Single pulse avalanche energy

(Note 2)

EAS

180

mJ

Avalanche current

IAR

Repetitive avalanche energy (Note 3)

EAR

3.5

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

-55~150

DC
Drain current

1: Gate
2: Drain
3: Source

JEDEC
JEITA
TOSHIBA

SC-67
2-10U1B

Weight : 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

3.57

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = 90 V, Tch = 25C(initial), L = 12.2 mH, IAR = 5 A, RG = 25

Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.

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2SK3563
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Typ.

Max

Unit

10

VGS = 25 V, VDS = 0 V

V (BR) GSS

IG = 10 A, VDS = 0 V

30

IDSS

VDS = 500 V, VGS = 0 V

100

ID = 10 mA, VGS = 0 V

500

Drain cut-off current

Drain-source breakdown voltage

Min

IGSS

Gate leakage current

Gate-source breakdown voltage

Test Condition

V (BR) DSS
Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 2.5 A

1.35

1.50

Forward transfer admittance

Yfs

VDS = 10 V, ID = 2.5 A

1.5

3.5

Input capacitance

Ciss

550

70

ID = 2.5 A VOUT

10

RL =
90

20

10

50

16

10

Gate threshold voltage

VDS = 25 V, VGS = 0 V, f = 1 MHz

Reverse transfer capacitance

Crss

Output capacitance

Coss
Rise time

tr

Turn-on time

10 V
VGS
0V

ton

15

Switching time
Fall time

tf

Turn-off time

VDD
225 V
Duty <
= 1%, tw = 10 s

toff

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD
400 V, VGS = 10 V, ID = 5 A

pF

ns

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics
Continuous drain reverse current
Pulse drain reverse current

Symbol

Test Condition

Min

Typ.

Max

Unit

(Note 1)

IDR

(Note 1)

IDRP

20

IDR = 5 A, VGS = 0 V

1.7

Forward voltage (diode)

VDSF

Reverse recovery time

trr

IDR = 5 A, VGS = 0 V,

1400

ns

Qrr

dIDR/dt = 100 A/s

Reverse recovery charge

Marking

K3563

Part No. (or abbreviation code)

Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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2SK3563

ID VDS

ID VDS

10

COMMON SOURCE

10,15

Tc = 25C
PULSE TEST

10,15
5.5

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

52.5

4.75
4.5

6
COMMON SOURCE

Tc = 25C
PULSE TEST
5.5

4
5
2

4.5

VGS = 4 V
0
0

DRAIN-SOURCE VOLTAGE

VDS

VGS = 4 V
0
0

10

(V)

10

20

ID VGS
VDS (V)

PULSE TEST

DRAIN-SOURCE VOLTAGE

DRAIN CURRENT ID (A)

VDS = 20 V

4
Tc = 55C
100
25

0
0

GATE-SOURCE VOLTAGE VGS

10

COMMON SOURCE
Tc = 25
PULSE TEST

16

12
ID = 5 A
8

2.5
4
1.2
0
0

12

16

GATE-SOURCE VOLTAGE VGS

Yfs ID

20

(V)

RDS (ON) ID
10

Tc = 55C

25
100
1

COMMON SOURCE
VDS = 20 V
PULSE TEST
10

DRAIN CURRENT ID

DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m)

FORWARD TRANSFER ADMITTANCE

Yfs (S)

(V)

20

(V)

10

0.1
0.1

VDS

VDS VGS

COMMON SOURCE

40

40

DRAIN-SOURCE VOLTAGE

10

30

COMMON SOURCE
Tc = 25C
PULSE TEST

0.1
0.1

VGS = 10 V15V

DRAIN CURRENT ID

(A)

10

(A)

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2SK3563

RDS (ON) Tc

IDR VDS
10

COMMON SOURCE

DRAIN REVERSE CURRENT IDR

(A)

PULSE TEST
4

ID = 5A
2.5

VGS = 10 V

1.2

0
80

40

40

80

CASE TEMPERATURE

120

Tc

COMMON SOURCE
Tc = 25C

PULSE TEST
3

1
0.5
0.3

10
5

0.1
0

160

(C)

0.2

CAPACITANCE VDS

VDS

1.2

(V)

Vth Tc

GATE THRESHOLD VOLTAGE

Vth (V)

(pF)
CAPACITANCE C

0.8

Ciss

1000

Coss

100

10 COMMON SOURCE
VGS = 0 V

Crss

f = 1 MHz
Tc = 25C
1
0.1

10

DRAIN-SOURCE VOLTAGE

30 50

VDS

2
COMMON SOURCE
VDS = 10 V

ID = 1 mA
PULSE TEST
0
80

100

(V)

VDS (V)
DRAIN-SOURCE VOLTAGE

40

30

20

10

80

120

CASE TEMPERATURE

40

80

120

Tc

160

(C)

DYNAMIC INPUT / OUTPUT

CHARACTERISTICS

50

40

40

CASE TEMPERATURE

PD Tc

DRAIN POWER DISSIPATION

PD (W)

0.6

0.4

DRAIN-SOURCE VOLTAGE

10000

0
0

VGS = 0, 1 V

160

Tc

200

(C)

500

400

20

VDS

300

12
200
400
8

200
COMMON SOURCE
VGS

100

ID = 5 A
4

Tc = 25C
PULSE TEST

10

20

15

TOTAL GATE CHARGE

16

VDD = 100 V

Qg

0
25

GATE-SOURCE VOLTAGE VGS (V)

DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m )

(nC)

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2SK3563

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)

rth tw
10

Duty=0.5
0.2
0.1

0.1

0.05
PDM

0.02

SINGLE PULSE

0.01

0.01

Duty = t/T
Rth (ch-c) = 3.57C/W
0.001
10

100

10

PULSE WIDTH

100

tw

EAS Tch

SAFE OPERATING AREA

100

200

AVALANCHE ENERGY
EAS (mJ)

DRAIN CURRENT ID (A)

ID max (PULSED) *
10

100 s *
ID max (CONTINUOUS) *
1 ms *

10

(s)

DC OPERATION
Tc = 25C

160

120

80

40

SINGLE NONREPETITIVE

0.1

PULSE

0
25

Tc=25
CURVES MUST BE

VDSS max

TEMPERATURE.

10

75

100

125

150

CHANNEL TEMPERATURE (INITIAL)

Tch (C)

LINEARLY WITH INCREASE IN

0.01
1

50

DERATED

100

DRAIN-SOURCE VOLTAGE

1000

VDS

(V)

15 V

BVDSS
IAR

15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 12.2mH

VDS

WAVE FORM
AS =

1
B VDSS

L I2
B

V
DD
VDSS

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2SK3563

RESTRICTIONS ON PRODUCT USE

030619EAA

The information contained herein is subject to change without notice.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

2006-11-06