3 NV/ HZ, Low Power Instrumentation Amplifier: AD8421-EP

3 nV/Hz, Low Power
Instrumentation Amplifier
AD8421-EP
Enhanced Product
PIN CONNECTION DIAGRAM
Supports defense and aerospace applications (AQEC standard)

Military temperature range (55C to +125C)
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
GENERAL DESCRIPTION
The AD8421-EP is a low cost, low power, extremely low noise,
ultralow bias current, high speed instrumentation amplifier that
is ideally suited for a broad spectrum of signal conditioning and
data acquisition applications. This product features extremely
high CMRR, allowing it to extract low level signals in the presence
of high frequency common-mode noise over a wide
temperature range.
The 10 MHz bandwidth, 35 V/s slew rate, and 0.6 s settling
time to 0.001% (G = 10) allow the AD8421-EP to amplify high
speed signals and excel in applications that require high channel
count, multiplexed systems. Even at higher gains, the current
feedback architecture maintains high performance; for example,
at G = 100, the bandwidth is 2 MHz and the settling time is
0.8 s. The AD8421-EP has excellent distortion performance,
making it suitable for use in demanding applications such as
vibration analysis.
Rev. 0
+VS
RG
VOUT
RG
REF
+IN
VS
Figure 1.
10
G = 100
BEST AVAILABLE
7mA LOW NOISE IN-AMP
100n
10n
BEST AVAILABLE
1mA LOW POWER IN-AMP
AD8421
RS NOISE ONLY
1n
100
1k
10k
100k
SOURCE RESISTANCE, RS ()
1M
11139-078
ENHANCED PRODUCT FEATURES
AD8421-EP
IN
TOP VIEW
(Not to Scale)
TOTAL NOISE DENSITY AT 1kHz (V/Hz)
Specified from 55C to 125C

0.9 V/C maximum input offset voltage drift
5 ppm/C maximum gain drift (G = 1)
Low power
2.3 mA maximum supply current
Low noise
3.2 nV/Hz maximum input voltage noise at 1 kHz
200 fA/Hz current noise at 1 kHz
Excellent ac specifications
2 MHz bandwidth (G = 100)
0.6 s settling time to 0.001% (G = 10)
80 dB minimum CMRR at 20 kHz (G = 1)
High precision dc performance
84 dB CMRR minimum (G = 1)
2 nA maximum input bias current
Inputs protected to 40 V from opposite supply
Gain set with a single resistor (G = 1 to 10,000)
11139-001
FEATURES
Figure 2. Noise Density vs. Source Resistance
The AD8421-EP delivers 3 nV/Hz input voltage noise and

200 fA/Hz current noise with only 2 mA quiescent current,
making it an ideal choice for measuring low level signals. For
applications with high source impedance, the AD8421-EP employs
innovative process technology and design techniques to provide
noise performance that is limited only by the sensor.
The AD8421-EP uses unique protection methods to ensure robust
inputs while still maintaining very low noise. This protection
allows input voltages up to 40 V from the opposite supply rail
without damage to the part.
A single resistor sets the gain from 1 to 10,000. The reference
pin can be used to apply a precise offset to the output voltage.
The AD8421-EP is specified over the military temperature range of
55C to +125C. It is available in an 8-lead MSOP package.
Additional application and technical information can be found
in the AD8421 data sheet.
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Tel: 781.329.4700
2013 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
AD8421-EP
Enhanced Product
TABLE OF CONTENTS
Features .............................................................................................. 1
ESD Caution...................................................................................6
General Description ......................................................................... 1
Pin Configuration and Function Descriptions..............................7
Revision History ............................................................................... 2
Typical Performance Characteristics ..............................................8
Specifications..................................................................................... 3
Outline Dimensions ....................................................................... 18
Absolute Maximum Ratings ............................................................ 6
Ordering Guide .......................................................................... 18
Thermal Resistance ...................................................................... 6
REVISION HISTORY
5/13Revision 0: Initial Version
Rev. 0 | Page 2 of 20
Enhanced Product
AD8421-EP
SPECIFICATIONS
VS = 15 V, VREF = 0 V, TA = 25C, G = 1, RL = 2 k, unless otherwise noted.
Table 1.
Parameter
COMMON-MODE REJECTION RATIO (CMRR)
CMRR DC to 60 Hz with 1 k Source Imbalance
G=1
G = 10
G = 100
G = 1000
Over Temperature, G = 1
CMRR at 20 kHz
G=1
G = 10
G = 100
G = 1000
NOISE
Voltage Noise, 1 kHz 1
Input Voltage Noise, eni
Output Voltage Noise, eno
Peak to Peak, RTI
G=1
G = 10
G = 100 to 1000
Current Noise
Spectral Density
Peak to Peak, RTI
VOLTAGE OFFSET 2
Input Offset Voltage, VOSI
Over Temperature
Average TC
Output Offset Voltage, VOSO
Over Temperature
Average TC
Offset RTI vs. Supply (PSR)
G=1
G = 10
G = 100
G = 1000
INPUT CURRENT
Input Bias Current
Over Temperature
Average TC
Input Offset Current
Over Temperature
Average TC
Test Conditions/ Comments
Min
Typ
Max
Unit
VCM = 10 V to +10 V
TA = 55C to +125C
VCM = 10 V to +10 V
84
104
124
134
80
dB
dB
dB
dB
dB
80
90
100
100
dB
dB
dB
dB
VIN+, VIN = 0 V
3
3.2
60
nV/Hz
nV/Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 0.1 Hz to 10 Hz
2
0.5
0.07
V p-p
V p-p
V p-p
200
18
fA/Hz
pA p-p
VS = 5 V to 15 V
TA = 55C to +125C
70
160
0.9
600
1.5
9
TA = 55C to +125C
V
V
V/C
V
mV
V/C
VS = 2.5 V to 18 V
90
110
124
130
120
120
130
140
1
TA = 55C to +125C
50
0.5
TA = 55C to +125C
1
dB
dB
dB
dB
2
8
2
3
nA
nA
pA/C
nA
nA
pA/C
AD8421-EP
Parameter
DYNAMIC RESPONSE
Small Signal Bandwidth
G=1
G = 10
G = 100
G = 1000
Settling Time 0.01%
G=1
G = 10
G = 100
G = 1000
Settling Time 0.001%
G=1
G = 10
G = 100
G = 1000
Slew Rate
G = 1 to 100
GAIN 3
Gain Range
Gain Error
G=1
G = 10 to 1000
Gain Nonlinearity
G=1
G = 10 to 1000
Gain vs. Temperature3
G=1
G>1
INPUT
Input Impedance
Differential
Common Mode
Input Operating Voltage Range 4
Over Temperature
OUTPUT
Output Swing
Over Temperature
Short-Circuit Current
REFERENCE INPUT
RIN
IIN
Voltage Range
Reference Gain to Output
Enhanced Product
Min
Typ
Max
Unit
3 dB
10
10
2
0.2
MHz
MHz
MHz
MHz
0.7
0.4
0.6
5
s
s
s
s
1
0.6
0.8
6
s
s
s
s
35
V/s
10 V step
10 V step
G = 1 + (9.9 k/RG)
1
10,000
V/V
0.05
0.3
%
%
1
3
50
10
ppm
ppm
ppm
ppm
5
80
ppm/C
ppm/C
VS + 2.3
VS + 2.5
VS + 2.1
+VS 1.8
+VS 2.0
+VS 1.8
G||pF
G||pF
V
V
V
VS + 1.2
VS + 1.4
+VS 1.7
+VS 1.9
VOUT = 10 V
VOUT = 10 V to +10 V
RL 2 k
RL = 600
RL 600
VOUT = 5 V to +5 V
1
30
5
30||3
30||3
VS = 2.5 V to 18 V
TA = 55C
TA = +125C
RL = 2 k
VS = 2.5 V to 18 V
TA = 55C to +125C
65
20
20
VIN+, VIN = 0 V
VS
1
0.0001
24
+VS
V
V
mA
k
A
V
V/V
Enhanced Product
Parameter
POWER SUPPLY
Operating Range
Quiescent Current
Over Temperature
TEMPERATURE RANGE
For Specified Performance
AD8421-EP
Min
Dual supply
Single supply
2.5
5
Typ
2
TA = 55C to +125C
55
Max
Unit
18
36
2.3
2.8
V
V
mA
mA
+125
Total voltage noise = (eni2 + (eno/G)2 + eRG2). See the AD8421 data sheet for more information.
Total RTI VOS = (VOSI) + (VOSO/G).
3
These specifications do not include the tolerance of the external gain setting resistor, RG. For G > 1, add RG errors to the specifications given in this table.
4
Input voltage range of the AD8421-EP input stage only. The input range can depend on the common-mode voltage, differential voltage, gain, and reference voltage.
See the Typical Performance Characteristics section for more information.
1
2
AD8421-EP
Enhanced Product
ABSOLUTE MAXIMUM RATINGS

THERMAL RESISTANCE
Table 2.
Parameter
Supply Voltage
Output Short-Circuit Current Duration
Maximum Voltage at IN or +IN1
Minimum Voltage at IN or +IN
Maximum Voltage at REF2
Minimum Voltage at REF
Storage Temperature Range
Operating Temperature Range
Maximum Junction Temperature
ESD
Human Body Model
Charged Device Model
Machine Model
JA is specified for a device in free air using a 4-layer JEDEC

printed circuit board (PCB).
Rating
18 V
Indefinite
VS + 40 V
+VS 40 V
+VS + 0.3 V
VS 0.3 V
65C to +150C
55C to +125C
150C
Table 3.
Package
8-Lead MSOP
ESD CAUTION
2 kV
1.25 kV
0.2 kV
For voltages beyond these limits, use input protection resistors. See the
AD8421 data sheet for more information.
2
There are ESD protection diodes from the reference input to each supply, so
REF cannot be driven beyond the supplies in the same way that +IN and IN
can. See the AD8421 data sheet for more information.
1
Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
JA
138.6
Unit
C/W
Enhanced Product
AD8421-EP
IN
RG
AD8421-EP
+VS
VOUT
RG
REF
+IN
VS
TOP VIEW
(Not to Scale)
11139-002
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions

Pin No.
1
2, 3
4
5
6
7
8
Mnemonic
IN
RG
+IN
VS
REF
VOUT
+VS
Description
Negative Input Terminal.
Gain Setting Terminals. Place resistor across the RG pins to set the gain. G = 1 + (9.9 k/RG).
Positive Input Terminal.
Negative Power Supply Terminal.
Reference Voltage Terminal. Drive this terminal with a low impedance voltage source to level shift the output.
Output Terminal.
Positive Power Supply Terminal.
AD8421-EP
Enhanced Product
TYPICAL PERFORMANCE CHARACTERISTICS

TA = 25C, VS = 15 V, VREF = 0 V, RL = 2 k, unless otherwise noted.
600
600
500
500
300
300
200
200
100
100
40
20
20
40
60
INPUT OFFSET VOLTAGE (V)
0
400
1000
1200
800
UNITS
1500
900
400
300
200
0.5
0.5
1.0
1.5
100
200
300
400
600
600
2.0
INPUT BIAS CURRENT (nA)
0
2.0
11139-004
UNITS
1200
1.0
100
Figure 7. Typical Distribution of Output Offset Voltage
1800
1.5
200
OUTPUT OFFSET VOLTAGE (V)
Figure 4. Typical Distribution of Input Offset Voltage
0
2.0
300
1.5
1.0
0.5
0.5
1.0
1.5
2.0
INPUT OFFSET CURRENT (nA)
11139-007
0
60
11139-006
UNITS
400
11139-003
UNITS
400
Figure 8. Typical Distribution of Input Offset Current
Figure 5. Typical Distribution of Input Bias Current
1600
1400
1400
1200
1200
1000
UNITS
600
400
400
200
200
15
10
10
PSRR (V/V)
15
20
0
120
90
60
30
30
60
90
CMRR (V/V)
Figure 9. Typical Distribution of CMRR (G = 1)
Figure 6. Typical Distribution of PSRR (G = 1)
120
11139-008
0
20
800
600
11139-005
UNITS
1000
800
Enhanced Product
AD8421-EP
15
4
G=1
G = 100
VS = 15V
3
COMMON-MODE VOLTAGE (V)
VS = 12V
10
10
15
1
2
4
4
OUTPUT VOLTAGE (V)
Figure 10. Input Common-Mode Voltage vs. Output Voltage;

VS = 12 V and 15 V (G = 1)

VS = 2.5 V and 5 V (G = 100)
40
G=1
VS = 5V
30
VS = 5V
G=1
20
INPUT CURRENT (mA)
VS = 2.5V
1
0
1
10
0
10
20
30
OUTPUT VOLTAGE (V)
40
35 30 25 20 15 10 5
11139-010
3
4
10 15 20 25 30 35 40
INPUT VOLTAGE (V)

VS = 2.5 V and 5 V (G = 1)
11139-013
VS = 2.5V
11139-012
11139-009
10
OUTPUT VOLTAGE (V)
Figure 14. Input Overvoltage Performance; G = 1, +VS = 5 V, VS = 0 V
15
30
VS = 15V
G=1
VS = 15V
G = 100
20
10
INPUT CURRENT (mA)
VS = 12V
15
15
10
10
20
10
10
10
15
OUTPUT VOLTAGE (V)
11139-011
15
15
VS = 5V
2

VS = 12 V and 15 V (G = 100)
30
25
20
15
10
10
15
20
25
INPUT VOLTAGE (V)
Figure 15. Input Overvoltage Performance; G = 1, VS = 15 V
11139-014
10
AD8421-EP
Enhanced Product
160
40
GAIN = 1000
140
GAIN = 100
POSITIVE PSRR (dB)
120 GAIN = 10
10
0
10
100 GAIN = 1
80
60
20
40
30
20
40
35 30 25 20 15 10 5
10 15 20 25 30 35 40
INPUT VOLTAGE (V)
0
0.1
11139-015
INPUT CURRENT (mA)
20
100
1k
FREQUENCY (Hz)
10k
100k
1M
100k
1M
Figure 19. Positive PSRR vs. Frequency
Figure 16. Input Overvoltage Performance; +VS = 5 V, VS = 0 V, G = 100
160
30
GAIN = 1000
VS = 15V
G = 100
140 GAIN = 100
20
GAIN = 10
NEGATIVE PSRR (dB)
120
INPUT CURRENT (mA)
10
11139-018
30
VS = 5V
G = 100
10
10
GAIN = 1
100
80
60
40
20
10
10
15
20
25
INPUT VOLTAGE (V)
0
0.1
2.0
60
1.5
50
1.0
40
0.5
30
GAIN (dB)
70
0
0.5
20
1.5
10
2.0
20
10
12
14
10k
GAIN = 1000
GAIN = 100
GAIN = 10
10
1.0
11139-017
BIAS CURRENT (nA)
2.5
100
1k
FREQUENCY (Hz)
Figure 20. Negative PSRR vs. Frequency
Figure 17. Input Overvoltage Performance; VS = 15 V, G = 100
2.5
12 10 8
10
11139-019
15
GAIN = 1
30
100
1k
10k
100k
FREQUENCY (Hz)
Figure 21. Gain vs. Frequency
Figure 18. Input Bias Current vs. Common-Mode Voltage
1M
10M
11139-020
20
11139-016
30
25
20
Enhanced Product
160
GAIN = 1000
120
GAIN = 100
GAIN = 10
BIAS CURRENT (nA)
140
GAIN = 1
100
80
60
REPRESENTATIVE SAMPLES
0
2
4
6
10
100
1k
10k
100k
FREQUENCY (Hz)
8
55 40 25 10
11139-021
40
0.1
20
35
50
65
80
95
110 125
TEMPERATURE (C)
11139-125
CMRR (dB)
AD8421-EP
Figure 25. Input Bias Current vs. Temperature
Figure 22. CMRR vs. Frequency
100
160
GAIN = 1000
80
140
GAIN = 1
60
CMRR (dB)
120
GAIN ERROR (V/V)
GAIN = 100
GAIN = 10
100
GAIN = 1
80
40
20
0
20
40
60
60
10
100
1k
10k
100k
FREQUENCY (Hz)
100
55 40 25 10
20
35
50
65
80
95
110 125
110 125
TEMPERATURE (C)
Figure 26. Gain vs. Temperature (G = 1)
Figure 23. CMRR vs. Frequency, 1 k Source Imbalance
15
2.0
GAIN = 1
10
1.5
CMRR (V/V)
1.0
0.5
0.5
10
10
15
20
25
30
35
40
45
50
WARM-UP TIME (Seconds)
11139-023
CHANGE IN INPUT OFFSET VOLTAGE (V)
11139-126
11139-022
40
0.1
11139-127
80
15
55 40 25 10
20
35
50
65
80
95
TEMPERATURE (C)
Figure 27. CMRR vs. Temperature (G = 1)
Figure 24. Change in Input Offset Voltage (VOSI) vs. Warm-Up Time
AD8421-EP
3.0
Enhanced Product
45
VS = 15V
40
2.5
SR
2.0
30
SLEW RATE (V/s)
SUPPLY CURRENT (mA)
35
1.5
1.0
+SR
25
20
15
10
0.5
20
35
50
65
80
95
110 125
TEMPERATURE (C)
0
55 40 25 10
+VS
INPUT VOLTAGE (V)

REFERRED TO SUPPLY VOLTAGES
20
0
20
40
60
80
ISHORT
20
35
50
65
65
80
95
110 125
1.0
1.5
2.0
2.5
+2.5
+2.0
+1.5
+1.0
+0.5
80
95
110 125
TEMPERATURE (C)
VS
11139-129
SHORT CIRCUIT CURRENT (mA)
ISHORT+
120
55 40 25 10
50
55C
40C
+25C
+85C
+105C
+125C
0.5
100
35
Figure 31. Slew Rate vs. Temperature, VS = 5 V (G = 1)
80
40
20
TEMPERATURE (C)
Figure 28. Supply Current vs. Temperature (G = 1)
60
10
12
14
16
18
SUPPLY VOLTAGE (VS)
11139-132
11139-128
0
55 40 25 10
11139-131
Figure 32. Input Voltage Limit vs. Supply Voltage
Figure 29. Short-Circuit Current vs. Temperature (G = 1)
15
40
SR
35
10
OUTPUT VOLTAGE SWING (V)
+SR
25
20
15
10
+125C
+105C
+85C
+25C
40C
55C
10
0
55 40 25 10
20
35
50
65
80
95
110 125
TEMPERATURE (C)
15
100
1k
10k
LOAD ()
Figure 33. Output Voltage Swing vs. Load Resistance
Figure 30. Slew Rate vs. Temperature, VS = 15 V (G = 1)
100k
11139-135
11139-130
SLEW RATE (V/s)
30
Enhanced Product
AD8421-EP
+VS
2
4
GAIN = 1000
80
60
NONLINEARITY (ppm)
+6
+2
20
40
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
10
OUTPUT VOLTAGE (V)
11139-072
0.01
11139-136
100
10
Figure 37. Gain Nonlinearity (G = 1000), RL = 600 , VOUT = 10 V
Figure 34. Output Voltage Swing vs. Output Current
100
GAIN = 1
GAIN = 1000
80
60
40
NONLINEARITY (ppm)
1
0
1
2
3
20
RL = 600
0
20
40
60
RL = 2k
RL = 10k
5
10
80
10
OUTPUT VOLTAGE (V)
100
5
11139-035
VOLTAGE NOISE SPECTRAL DENSITY (nV/Hz)
3
2
1
RL = 600
1
2
3
OUTPUT VOLTAGE (V)
10
11139-036
4
6
1k
GAIN = 1
4
Figure 38. Gain Nonlinearity (G = 1000), RL = 600 , VOUT = 5 V
5
10
OUTPUT VOLTAGE (V)
Figure 35. Gain Nonlinearity (G = 1), RL = 10 k, 2 k
11139-073
NONLINEARITY (ppm)
RL = 600
80
OUTPUT CURRENT (A)
NONLINEARITY (ppm)
20
60
+4
VS
40
Figure 36. Gain Nonlinearity (G = 1), RL = 600
100
GAIN = 1
GAIN = 10
10
GAIN = 100
GAIN = 1000
1
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 39. RTI Voltage Noise Spectral Density vs. Frequency
11139-037
OUTPUT VOLTAGE SWING (V)

REFERRED TO SUPPLY VOLTAGES
100
55C
40C
+25C
+85C
+105C
+125C
AD8421-EP
Enhanced Product
30
G = 1000, 40nV/DIV
OUTPUT VOLTAGE (V p-p)
25
G = 1, 1V/DIV
15
10
0
10
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 40. 0.1 Hz to 10 Hz RTI Voltage Noise (G = 1, G = 1000)
Figure 43. Large Signal Frequency Response
1k
5V/DIV
720ns TO 0.01%
1.12s TO 0.001%
100
10
100
1k
10k
100k
FREQUENCY (Hz)
1s/DIV
11139-039
10
0.1
11139-041
0.002%/DIV
Figure 41. Current Noise Spectral Density vs. Frequency

Figure 44. Large Signal Pulse Response and Settling Time (G = 1),
10 V Step, VS = 15 V, RL = 2 k, CL = 100 pF
5V/DIV
420ns TO 0.01%
604ns TO 0.001%
5pA/DIV
1s/DIV
1s/DIV
Figure 42. 0.1 Hz to 10 Hz Current Noise
11139-042
0.002%/DIV
11139-040
CURRENT NOISE (fA/Hz)
10k
11139-045
11139-038
1s/DIV
20
Enhanced Product
AD8421-EP
GAIN = 1
5V/DIV
704ns TO 0.01%
764ns TO 0.001%
50mV/DIV
1s/DIV
11139-046
1s/DIV
11139-043
0.002%/DIV
Figure 49. Small Signal Pulse Response (G = 1), RL = 600 , CL = 100 pF
GAIN = 10
5V/DIV
3.8s TO 0.01%
5.76s TO 0.001%
50mV/DIV
1s/DIV
11139-047
4s/DIV
11139-044
0.002%/DIV
2500
GAIN = 100
1500
SETTLED TO 0.001%
1000
20mV/DIV
GAIN = 1
0
10
12
14
16
18
20
STEP SIZE (V)
Figure 48. Settling Time vs. Step Size (G = 1), RL = 2 k, CL = 100 pF
1s/DIV
11139-048
SETTLED TO 0.01%
500
11139-054
SETTLING TIME (ns)
2000
AD8421-EP
Enhanced Product
40
GAIN = 1000
50
60
NO LOAD
RL = 2k
RL = 600
VOUT = 10V p-p
AMPLITUDE (dBc)
70
80
90
100
110
120
11139-049
130
2s/DIV
140
150
10
100
1k
10k
FREQUENCY (Hz)
20pF 50pF
NO LOAD
100pF
11139-056
20mV/DIV
Figure 55. Third Harmonic Distortion vs. Frequency (G = 1)
40
G=1
50
NO LOAD
RL = 2k
RL = 600
VOUT = 10V p-p
AMPLITUDE (dBc)
60
70
80
90
1s/DIV
110
120
10
RL 600
Figure 56. Second Harmonic Distortion vs. Frequency (G = 1000)
40
VOUT = 10V p-p
70
60
AMPLITUDE (dBc)
80
90
100
110
120
70
80
90
100
130
110
140
100
1k
10k
FREQUENCY (Hz)
11139-055
AMPLITUDE (dBc)
VOUT = 10V p-p
RL 600
50
60
150
10
10k
Figure 54. Second Harmonic Distortion vs. Frequency (G = 1)
120
10
100
1k
10k
FREQUENCY (Hz)
Figure 57. Third Harmonic Distortion vs. Frequency (G = 1000)
11139-076
50
1k
FREQUENCY (Hz)
Figure 53. Small Signal Response with Various Capacitive Loads (G = 1),
RL = Infinity
40
100
11139-075
50mV/DIV
11139-053
100
Enhanced Product
20
30
40
G
G
G
G
AD8421-EP
=1
= 10
= 100
= 1000
VOUT = 10V p-p

RL = 2k
60
70
80
90
100
110
120
130
140
10
100
1k
FREQUENCY (Hz)
10k
11139-077
AMPLITUDE (dBc)
50
Figure 58. THD vs. Frequency
AD8421-EP
Enhanced Product
OUTLINE DIMENSIONS
3.20
3.00
2.80
3.20
3.00
2.80
5.15
4.90
4.65
PIN 1
IDENTIFIER
0.65 BSC
0.95
0.85
0.75
15 MAX
1.10 MAX
0.40
0.25
6
0
0.23
0.09
0.80
0.55
0.40
COMPLIANT TO JEDEC STANDARDS MO-187-AA
10-07-2009-B
0.15
0.05
COPLANARITY
0.10
Figure 59. 8-Lead Mini Small Outline Package [MSOP]

(RM-8)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
AD8421TRMZ-EP
AD8421TRMZ-EP-R7
1
Temperature Range
55C to +125C
55C to +125C
Package Description
8-Lead Mini Small Outline Package [MSOP]
8-Lead Mini Small Outline Package [MSOP]
Z = RoHS Compliant Part.
Package Option
RM-8
RM-8
Branding
Y4T
Y4T
Enhanced Product
AD8421-EP
NOTES
AD8421-EP
Enhanced Product
NOTES
2013 Analog Devices, Inc. All rights reserved. Trademarks and

registered trademarks are the property of their respective owners.
D11139-0-5/12(0)

3 NV/ HZ, Low Power Instrumentation Amplifier: AD8421-EP

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3 NV/ HZ, Low Power Instrumentation Amplifier: AD8421-EP

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3 nV/Hz, Low Power

PIN CONNECTION DIAGRAM

Supports defense and aerospace applications (AQEC standard)

ENHANCED PRODUCT FEATURES

TOTAL NOISE DENSITY AT 1kHz (V/Hz)

Specified from 55C to 125C

Figure 2. Noise Density vs. Source Resistance

The AD8421-EP delivers 3 nV/Hz input voltage noise and

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

General Description ......................................................................... 1

Pin Configuration and Function Descriptions..............................7

Revision History ............................................................................... 2

Typical Performance Characteristics ..............................................8

Outline Dimensions ....................................................................... 18

Absolute Maximum Ratings ............................................................ 6

Ordering Guide .......................................................................... 18

Thermal Resistance ...................................................................... 6

Test Conditions/ Comments

ABSOLUTE MAXIMUM RATINGS

JA is specified for a device in free air using a 4-layer JEDEC

Stresses above those listed under Absolute Maximum Ratings

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

Figure 3. Pin Configuration

Table 4. Pin Function Descriptions

TYPICAL PERFORMANCE CHARACTERISTICS

INPUT OFFSET VOLTAGE (V)

INPUT BIAS CURRENT (nA)

Figure 7. Typical Distribution of Output Offset Voltage

OUTPUT OFFSET VOLTAGE (V)

Figure 4. Typical Distribution of Input Offset Voltage

INPUT OFFSET CURRENT (nA)

Figure 8. Typical Distribution of Input Offset Current

Figure 5. Typical Distribution of Input Bias Current

Figure 9. Typical Distribution of CMRR (G = 1)

Figure 6. Typical Distribution of PSRR (G = 1)

COMMON-MODE VOLTAGE (V)

OUTPUT VOLTAGE (V)

Figure 10. Input Common-Mode Voltage vs. Output Voltage;

Figure 13. Input Common-Mode Voltage vs. Output Voltage;

INPUT CURRENT (mA)

OUTPUT VOLTAGE (V)

INPUT VOLTAGE (V)

Figure 11. Input Common-Mode Voltage vs. Output Voltage;

COMMON-MODE VOLTAGE (V)

OUTPUT VOLTAGE (V)

Figure 14. Input Overvoltage Performance; G = 1, +VS = 5 V, VS = 0 V

INPUT CURRENT (mA)

OUTPUT VOLTAGE (V)

COMMON-MODE VOLTAGE (V)

Figure 12. Input Common-Mode Voltage vs. Output Voltage;

INPUT VOLTAGE (V)

Figure 15. Input Overvoltage Performance; G = 1, VS = 15 V

COMMON-MODE VOLTAGE (V)

POSITIVE PSRR (dB)

INPUT VOLTAGE (V)

INPUT CURRENT (mA)

Figure 19. Positive PSRR vs. Frequency

Figure 16. Input Overvoltage Performance; +VS = 5 V, VS = 0 V, G = 100

140 GAIN = 100

NEGATIVE PSRR (dB)

INPUT CURRENT (mA)

INPUT VOLTAGE (V)