Beruflich Dokumente
Kultur Dokumente
F. Moreno, K. Dyke
Alstom Grid
Stafford, UK
francisco.moreno@alstom.com
I.
INTRODUCTION
This study has been financed by the EPSRC under the UK Power
Electronics Centre Converter Theme grant (EP/K035096/1)
(7)
= (1 )
IC+ =
IC
= (1 )
IB+
IB
(9)
= (1 )
(11)
= + + + + +
= + +
= + +
2
IA
IB+
IB
IA
2
IB
IC+
2
IB
2
IC
IC =
2
IC
(10)
(12)
II.
(8)
(1)
(2)
(3)
(4)
(5)
(6)
(13)
SIMULATION
A. Simulation Model
In order to assess the benefits of the AAC mode of
operation, a 120 MW MMC converter has been simulated
using Simulink and the Artemis toolbox in order to
simulate a reasonably large number of half-bridge cells. The
characteristics of this simulation model are listed in Table 1.
In order to better match realistic MMC converter, triplen
harmonic voltage injection has been used (about 15% of the
Rated power
DC bus
AC line
AC frequency
Triplen harmonic voltage
Number of cells per stack
Cell capacitor
Phase inductor
Arm inductor
120 MW
50 kV
55 kV
50 Hz
15%
56
8 mF
8 mH
6 mH
Table 2 Power losses of the MMC model depending on the mode of operation and operating point relative to the apparent power
Active Power
Reactive Power
Conduction
losses
MMC
Switching
mode
losses
Total
losses
Conduction
losses
AAC
Switching
mode
losses
Total
losses
1 pu
0 pu
0.7 pu
0.7 pu
0 pu
1 pu
-0.7 pu
0.7 pu
-1 pu
0 pu
-0.7 pu
-0.7 pu
0 pu
-1 pu
0.7 pu
-0.7 pu
0.50%
0.44%
0.36%
0.37%
0.38%
0.37%
0.35%
0.45%
0.15%
0.14%
0.13%
0.13%
0.15%
0.15%
0.15%
0.16%
0.65%
0.58%
0.49%
0.51%
0.53%
0.52%
0.50%
0.60%
0.53%
0.56%
0.51%
0.43%
0.38%
0.40%
0.49%
0.53%
0.16%
0.22%
0.24%
0.20%
0.17%
0.26%
0.30%
0.32%
0.69%
0.78%
0.75%
0.63%
0.55%
0.66%
0.79%
0.85%
IV.
OPTIMIZATION SCENARIOS
Mode of operation
Average cell voltage
PWM carrier frequency
Average peak-to-peak cell voltage
deviation
Maximum individual cell voltage
Minimum individual cell voltage
Arm current (Maximum value)
Arm current (Minimum value)
Arm current (Average value)
Arm current (RMS value)
Conduction losses
Switching losses
Total power losses
Power efficiency (semiconductor only)
Temperature IGBT 1 (steady state)
Temperature Diode 1 (steady state)
Temperature IGBT 2 (steady state)
Temperature Diode 2 (steady state)
Number of extra redundant cells
MMC
1.800 kV
169 Hz
AAC
1.800 kV
169 Hz
AAC
1.800 kV
119 Hz
AAC
1.880 kV
169 Hz
252 V
172 V
172 V
166 V
1,980 V
1,660 V
1,323 A
-503 A
402 A
753 A
468 kW
180 kW
648 kW
99.46%
75C
74C
74C
100C
0
1,954 V
1,696 V
1,643 A
-244 A
402 A
803 A
459 kW
202 kW
661 kW
99.45%
74C
72C
75C
104C
0
1,942 V
1,673 V
1,643 A
-244 A
402 A
803 A
459 kW
156 kW
615 kW
99.49%
72C
70C
75C
103C
0
2,003 V
1,767 V
1,643 A
-244 A
402 A
803 A
459 kW
209 kW
668 kW
99.44%
73C
72C
76C
104C
2.8 (5%)
V.
CONCLUSION
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