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Application Note
August, 2012
Power Management
Discretes
1
Edition 1.0
Published by
Infineon Technologies AG
81726 Munich, Germany
2012 Infineon Technologies AG
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Re
everse Con
nduction IG
GBT for Ind
ductive Heating
1 Intrroductio
on
The princcle of inducttion heating was discovered by Micchael Faradaay in 1831. By
B an experiiment
with twoo coils wired
d around ann iron core he
h discovereed that duriing the swittching eventt of a
battery coonnected to the first coill an oposity current flow
w could be measured
m
witth a galvanom
meter
on the second coil. He concludded that ann electric current
c
can be producedd by a channging
magneticc field. Sincee there is noo galvanic coonnection frrom the prim
mary to the secondary
s
cooil he
called thee voltage in the second coil inducteed. His geneeral law form
med out of thhis experiment is
called as a general laaw that is exxplaind as thhe EMF eleectro-motive force induccted in a circcuit is
directly propotional
p
to the timee rate of chaange of maggnetic flux though
t
the circuit.
c
Heiinrich
Lenz form
med in a laater stage thhe The pollarity of thee inducted EMF
E
is suchh that it tennds to
produce a current thaat will createe a magnetic flux to oppoose the channge in magneetic flux throozugh
the loop. [1] This pricple
p
was used for trransforming different leevels of volttage for effficient
transmisssion of electricity and thhe operation of electricall machines. A effect obsserved durinng the
energy trransformatio
on was heat generated in the cores.. These corees are generraly relaizedd with
laminatedd stacks of steel, but thhis effect couuld be usedd in inductioon heating with
w the com
mplete
oposite effect
e
in ordeer to use it for
f inductionn heating annd the well known
k
purppose for induuctive
cooking.
The deviices used for commerical householdd cooking to allow a high-frequenc
h
cy change of
o the
magneticc field in the coils are genneraly IGBT
Ts due to theere high currrent rating caapability andd high
frequencyy operatio
on without a signifficantly hiigh drivingg current capability. In
Fig. 1 an example com
mmerical exxample of a cooker
c
is shoown.
ypical applic
cation Single-Plate indu
uction cooke
er end-custo
omer produc
ct (left) and open
Fig. 1: Ty
circuit ins
side view (rig
ght)
~
Gate
Driver
Vbref
Vcref
PWM
Vceref
MCU
2 Technology
Infineon provides a specific family for indution cooking that is optimized for the operation of
resonant inverters. The reverse conduction (RC) technology provides an IGBT in TRENCHSTOP
technology with a monolithically integrated powerful reverse diode. Due to this technology an
additional anti-parallel diode can be avoided. On cell of the IGBT shown in Fig. 4 is based on
two major principles, which are the fieldstop layer and the trench gate structure. This structure
combination leads to a widely improved saturation voltage and very low turn-off energies.
Compared to previous generations based on the NPT-cell design thinner wafer substrates can be
used to increase the conduction and switching performance. Furthermore new trade-offs between
the turn-off energy and the saturation voltage can be reached, which was not possible with planar
cells in common IGBT technologies, such as non-punch trough NPT or punch through PT
technologies. Due to the relatively large reverse recovery charge compared two discrete diodes
the IGBT is only suited for soft-switching. The benefits over a classical two chip solution are
higher power density of the devices and a full nominal current rated diode since the IGBT and the
diode are using the same die area.
Diode
IGBT
Emitter
RC IGBT
Emitter
Gate
Gate
Anode
+
Cathode
=
Collector
Collector
Soft-Switching
Inverterised Microwave
Hard Switching
Inverterised major home appliances:
Washing machines, dishwashers, fridges,
air-conditioning
General purpose inverters
Solar Inverters
PFC stages
Break IGBTs
UPS/welding
Soft switching can reduce the switching losses of the IGBT significantly. The operation of soft
switching can be divided into two main operations ZVS-mode (zero-voltage-switch) and ZCSmode (zero-current-switch). During commutation time tk the dc-link voltage drop over the
current-carrying switch causes considerable power losses in the IGBT. While soft switching is
either 0 V with a positive collector current or 0 A collector current with a positive
collector-emitter voltage. During the current commutation time tk the power losses are almost
neglect able. This enables the usage of the IGBT for a wide range of switching frequencies up to
100 kHz. Since the reverse-conduction IGBTs are designed for soft switching they cannot be
used in hard switching application. The diode is not commutation proof since its optimized for a
low vF, with a slow reverse recovery and relatively long current tails. The power dissipation at
IGBT turn-on in hard switching conditions would be unacceptably high and would eventually
lead to device failure. The typical waveforms for hard switching are shown in Fig. 5 for the turnoff and Fig. 6 for the turn-on.
18
16
400
14
VCE[V]
VCE[V]
VGE[V]
IGBT:ON
Diode:OFF
10
Eoff
8
200
6
IGBT:OFF
Diode:ON
100
IC [A]&VGE [V]
12
IC[A]
300
2
0
0
0
0.2
0.4
100
0.6
0.8
2
4
t[us]
500
Eon
16
400
IC[A]
IGBT:OFF
Diode:ON
10
200
8
IGBT:ON
Diode:OFF
100
4
2
0
0
100
0.2
0.4
0.6
0.8
1 0
2
t[us]
IC [A]&VGE [V]
12
VGE[V]
300
VCE[V]
14
VCE[V]
Irrm
(Qrr)
25
IGBT:ON
Diode:NC
600
Eoff
20
VCE[V]
500
IC[A]
VGE[V]
VCE[V]
300
10
200
IGBT:OFF
Diode:NC
IC [A]&VGE [V]
15
400
100
0
0
0
100
t[us]
4
5
1
2
E CresVCE
2
40
800
VCE[V]
0
200
10
15
20
25
30
IC [A]&VGE [V]
20
300
20
700
40
1200
60
t[us]
4 IGBT selection
For halfbridge operation Infineon provides IGBTs for medium frequency induction heaters, that
are in a range of 8 to 20 kHz operation for the highest power range. These IGBTs are available
for hard- and soft-switching conditions (T Series and R series). Furthermore a high speed series
of the 600V RC IGBT (F) Version is available for switching frequencies from 20 to 100 kHz. A
detailed list of the IGBTs is shown in
Tab. 2.
Tab. 2 Product matrix of 600V IGBTs for inductive heating
Revolutionary Application Specific Resonant Converters and Induction Cooking Series IGBTs
Continuous
Current IC
TC =100C
TO-247
600V
1100V
15A
20A
1200V
1350V
1600V
IHW15N120R3
IHW20N120R3
IKW20N60H3
25A
IHW20N135R3
IHW25N120R2
30A
IHW30N60T
IKW30N60H3
40A
IHW40T60
IHW40N60R
IHW40N60RF
50A
IKW50N60H3
60A
IKW60N60H3
75A
IKW75N60H3
IHW30N110R3
IHW30N120R3
IHW30N135R3
IKW40N120R3
IHW40N135R3
10
IHW30N160R2
5 Simulation
The reverse conduction capability of the RC-IGBT is provided by an appropriate short structure
of the IGBT anode. Due to this structure the cathode pn junction starts injecting minority carriers
into the base region of the IGBT when a reverse voltage appears across the IGBT.
The forward voltage condition leads to a slightly different behavior of the RC-IGBT compared to
the conventional IGBT. Some fraction of the MOS current is by-passing the emitter which will
lead to a delayed minority carrier injection from the anode emitter. This situation is schematically
shown in Fig. 9. In order to set up an RC-IGBT virtual prototype on a SPICE like simulator, a
model based on the sub-circuit structure was developed. Two sub models, one of an IGBT, the
other of a diode are connected together. The outside connection points of both models are anode
and cathode. Internally, both models interact via the laterally flowing currents through an
effective coupling lateral resistor.
11
6 Application
6.1. Single-Ended induction heating topology
With an optimal load the IGBT is switched on at zero current and near zero voltage. For all
switching conditions the IGBT turn-off is always a soft switching since the voltage ramps up
sinusoidal. A fast switching is preferred since the turn-off losses are reduced. Due to layout
constrains e.g. stray inductance a fast switching leads to oscillations on the gate voltage and
could potentially damage the IGBT. An optimal RG would be as small as possible without
causing oscillations on VG.
Fig. 10: Optimal Switching Waveform with near Zero-Voltage and Zero-Current turn-on
12
13
Re
everse Con
nduction IG
GBT for Ind
ductive Heating
a.)
b.)
c.)
d.))
Fig. 12: Possibilities
P
of clampingg the collectoor-emitter vooltage
6.2. Ha
alfbridge topology
y
In the hallf-bridge top
pology ZVS and ZCS tuurn-on is achhieved by turrning on the IGBT durinng the
diode turrn-on period
d. The resoonant circuitt itself is based
b
on a series resonnance. The ZVS
conditionn during turn
n-off should be realized with a lossless snubber with capaciitors connectted in
parallel to
t the IGBTs. If there iss no snubbeer the RC-IG
GBT can pottentially be destroyed due
d to
excessivee power lossses in the sw
witch. It is reecommended to use a snubber
s
betw
ween 10..20 nF to
lower thee dV/dt resullting in a redduction of the losses in thhe IGBT (Fig. 13).
I
turn-off losses witth and without snubber
Fig. 13: IGBT
14
Re
everse Con
nduction IG
GBT for Ind
ductive Heating
nce of the forrward voltagge drop (VF
F) of the inteegrated diode and the appplied
Due to thhe dependen
gate-voltaage off the IGBT it is recommende
r
ed to increaase the deadttime of the driver voltaage to
turn-on thhe IGBT neaar the zero-ccrossing of the
t collectorr current. Thhis reduces thhe on state power
p
losses off the diode during
d
reversse conduction. A diagram
m showing the
t dependenncy of VF versus
v
g. 14.
VGE is shown in Fig
7 Conclusion
n
The Infinneon reverse conductioon IGBT is well suitedd for applications that are using a soft
switchingg based topo
ology. The device-famil
d
y offers appplication speecific optimiization for loowest
conductioon losses and
a
moderatte switchingg losses thee RC-H serries and thee switchingg loss
optimizedd RF series. If hard sw
witching is required
r
the TRENCHS
STOP co-pacck family caan be
used.
8 Refferences
s
[1] E.J. Davies,
D
Indu
uction Heatinng Handboook, McGraw--Hill, 1979
[2] Roaddmap for Process Heatinng Roadmapp for Processs Heating Technology,
T
U.S. Departtment
of Ennergy, 2001
[3] E. Griebl,
G
et al.: LightMOS a new Powerr Semiconduuctor Conceppt dedicated for Lamp Ballast
B
Appllication, IAS
S Annual meeeting, 2003..
15
16
w w w . i n f i n e o n . c o m / i g b t s
17
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