4

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4

HANDBOOK OF
X-RAY PHOTOELECTRON
SPECTROSCOPY
A Reference Book of Standard Data
For Use In
X-Ray Photoelectron Spectroscopy

By

C.D. Wagner
W.M. Riggs

L.E. Davis
J.F. Moulder

G.E. Muilenberg (Editor)

Published By

Perkin-Elmer Corporation
Physical Electronics Division
6509 Flying Cloud Drive
Eden Prairie, Minnesota 55344
%

***>>>>>>>>>> >>>>>>>>> >>>>>>>>

Copyright 1979
By

Perkin-Elmer Corporation
Physical Electronics Division

Printed in U.S.A.
All rights reserved

This book, or parts thereof, may not

be reproduced in any form without
permission of the publishers.

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Preface
X-Ray Photoelectron Spectroscopy (XPS), more
popularly known as Electron Spectroscopy for
Chemical Analysis (ESCA), is now a widely-used
analytical technique for investigating the
chemical composition of solid surfaces. Much
has already been written concerning the principles of the technique and the diverse range of
applications for which it has been used. Until
now, however, a concise reference work has not
been available to the ESCA practitioner. Thus, we
felt it desirable to assemble in a single, compact
volume much of the information required by those
persons using ESCA on a routine basis.

forms. Also included is a lengthy discussion of the

ESCA technique and its use.
In many ways, ESCA is more complex than Auger
spectroscopy. Both photoelectron lines and
Auger lines are found in the spectra and a variety
of satellite and other lines must be understood. In
addition, more detailed chemical information can
be obtained if exact line positions can be deter
mined. For these reasons, the Handbook of X-Ray
Photoelectron Spectroscopy contains much
precise spectroscopic energy information, in
cluding amplified Auger spectra and amplified
strong line photoelectron spectra.

Some users of this Handbook will recognize

strong similarities between it and the Handbook
of Auger Electron Spectroscopy, also published
by Physical Electronics. This is natural since
there are many similarities between ESCA and
Auger spectroscopy and much was learned from
publishing two editions of the Auger Handbook.
As in the previous Handbook, we include broad
scan spectra of most of the elements, as well as
spectra from a number of oxides to indicate the
differences between elemental states and ionic

This Handbook is meant to serve as a guide and

reference work for the long-time ESCA practi
tioner as well as the newcomer to the ESCA field.
We sincerely hope it serves this purpose and
plays a useful role in the practice of x-ray
photoelectron spectroscopy.
PERKIN-ELMER

Physical Electronics Division

December, 1978

<<<<<4<<4<44 4<<4<4<4<<<<4<<<<<

Contents
I. X-ray Photoelectron Spectroscopy

1. Introduction

2. Principles of the Technique

3. Preparing and Mounting Samples

A. Removal of Volatile Material
B. Removal of Non-volatile Organic
Contaminants
C. Surface Etching
D. Abrasion
E. Fracture and Scraping
F. Grinding to Powder
G. Mounting Powders for Analysis

6
6

H. Considerations of Mounting Angle

6
6
7
7

7
7
8

4. Experimental Procedure
8
A. Experimental Technique for Obtaining
Spectra
8
10
B. Instrument Calibration
C. Programming Scans for An Unknown
Sample
10
(1) Survey Scans
(2) Detail Scans
5. Data Interpretation
A. The Nature of the Spectrum
(1) General Features
(2) Kinds of Lines
B. Line Identification

12

12

16

C. Chemical State Identification

17
(1) Determination of Static Charge on
Insulators
(2) Photoelectron Line Chemical Shifts
and Separations
(3) Auger Line Chemical Shifts and the
Auger Parameter
(4) Satellite Lines and Peak Shapes
D. Quantitative Analysis
21
E. Determination of Element Location ... .23
6. How To Use This Handbook

27

II. Standard ESCA Spectra of the Elements and

Line Energy Information
29
1. Tables of Auger Parameter Data

168

2. References for Line Energy Information . . 174

III. Appendix

179

Table 1. Line Positions from Mg X-rays

182
(by element)
Table 2. Line Positions from Al X-rays
184
(by element)
Table 3. Line Positions from Mg X-rays
186
(numerical order)
Table 4. Line Positions from Al X-rays
187
(numerical order)
188
Table 5. Atomic Sensitivity Factors
189
Table 6. Periodic Table of the Elements
Table 7. Alphabetical Index of the Spectra. . 190

|4

I. X-RAY PHOTOELECTRON
SPECTROSCOPY

PERKIN-ELMER

* *

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1. Introduction
Surface analysis by ESCA involves irradiation of
the solid in vacuo with monoenergetic soft x-rays
and sorting the emitted electrons, by energy. The
spectrum obtained is a plot of the number of emit
ted electrons per energy interval versus their
kinetic energy. Each element has a unique elemen
tal spectrum, and the spectral peaks from a mix
ture are approximately the sum of the elemental
peaks from the individual constituents. Since the
mean free path of the electrons is very small, the
electrons which are detected originate from only
the top few atomic layers. Quantitative data can be
obtained from the peak heights or areas and iden
tification of chemical states often can be made
from the exact positions and separations of the
peaks, as well as from certain spectral contours.

This Handbook is designed to furnish the user with

much of the information necessary to use ESCA
for diverse types of surface analysis. Information is
provided on methods of sample preparation, data
gathering, identifying elements present, identify
ing the chemical states of surface constituents,
obtaining quantitative information on the elements
present, and determining elemental distribution by
depth and by phase.

Survey spectra, strong line spectra, and Auger

group spectra (x-ray excited) for most of the
elements and some of their compounds are includ
ed. Plots and tables of spectroscopic energy data
that will aid in the identification of chemical states
are also included with the spectral information.

PERKIN-ELMER

>>>>> >>>>>>*

2. Principles of the Technique

Surface analysis by x-ray photoelectron spec
troscopy (XPS), more commonly known as electron
spectroscopy for chemical analysis (ESCA), is ac
complished by irradiating a sample with
monoenergetic soft x-rays and energy analyzing
the electrons emitted. Mg Ko- x-rays (1253.6 eV) or
AlKa x-rays (1486.6 eV) are ordinarily used. These
photons have limited penetrating power in a solid,
of the order of 1-10 micrometers. They interact with
atoms in this surface region by the photoelectric
effect, causing electrons to be emitted. The emit
ted electrons have kinetic energies given by:
KE = hv - BE - <)>5

The binding energy may be regarded as an ioniza

tion energy of the atom for the particular shell in
volved. Since there is a variety of possible ions
from each type of atom, there is a corresponding
variety of kinetic energies of the emitted electrons.
Moreover, there is a different probability, or crosssection, for each process. The variety of ionization
processes for iron and uranium are shown
schematically in Figure 1. The Fermi level cor
responds to zero binding energy (by definition), and
the depth beneath the Fermi level in the Figure in
dicates the relative energy of the ion remaining
after electron emission, or the binding energy of
the electron. The lengths of the lines indicate the
relative probabilities of the various ionization pro
cesses. The p, d, and f levels'become split upon
ionization, leading to vacancies in the p1/2, p3(2, d3(2,
d5/2, f5/2, and f7/2 in the ratio 1:2 for p levels, 2:3 for d
levels, and 3:4 for f levels.
PHYSICAL ELECTRONICS

FERMI LEVEL

6P3/2

6P 1/2

SP3/2
5p 1/2

5s

"7/2 4f:
5/2
"

H)

where hv is the energy of the photon, BE is the

binding energy of the atomic orbital from which the
electron originates, and <t>3 is the spectrometer work
function.

URANIUM

IRON

500 eV

2P3/2
2Pl/2

"1*5/2
4(13/2

1000 eV

"P3/2

"Pl/2

Figure 1.

Relative ionization cross-sections and ionization

energies for iron and uranium. (Line lengths are
proportional to ionization cross-section and
depths below Fermi level are proportional to
ionization energy.)

I i I i

<
In addition to the photoelectrons emitted in the
photoelectric process, Auger electrons are emitted
due to relaxation of the energetic ions left after
photoemission. This Auger electron emission oc
curs roughly 10"'4 seconds after the photoelectric
event. (The competing emission of a fluorescent
x-ray photon is a minor process in this energy
range, occurring less than one percent of the time.)
In the Auger process, shown in Figure 2, an outer
electron falls into the inner orbital vacancy, and a
second electron is emitted, carrying off the excess
energy. The Auger electron possesses kinetic
energy equal to the difference between the energy
of the initial ion and the doubly-charged final ion,
and is independent of the mode of the initial ioniza
tion. Thus, photoionization normally leads to two
emitted electrons, a photoelectron and an Auger

L2 iOR

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i i

electron. Of course, the energies of the electrons

emitted cannot exceed the energy of the ionizing
photons.
Probabilities of interaction of the electrons with
matter far exceed those of the photons, so while
the path length of the photons is of the order of
micrometers, that of the electrons is of the order of
tens of Angstroms. Thus, while ionization occurs
to a depth of a few micrometers, only those elec
trons that originate within tens of Angstroms
below the solid surface can leave the surface
without energy loss. It is these electrons which
produce the peaks in the spectra and are most
useful. Those that undergo loss processes before
emerging form the background. Experimental data
100
80

2p

60

L, OR 2s

/
40

PHOTOELECTRON

PHOTON

4-

SB

>

E
ft/.

KOR 1s

\~E-75

+/

AUGER ELECTRON

Cf*

-0-1O

L2_3 OR 2p

ALUMINUM

L, OR 2s

200

1000
2000
400 600
(E) ELECTRON ENEHGY, (eV)

4000

K OR 1s

Figure 3.
Figure 2.

+=

A= CARBON
0= SILICON
0= GOLD

100

--

V
/ 4-

Diagram of the photoelectric process (top) and

the Auger process (bottom).

Electron mean free paths in various materials

(from tabulation by C. J. Powell, Surface Science,
44 (1974) p. 29.)

PERKIN-ELMER

>>>>)

>>>>>>>>>

on mean free paths of electrons in various

materials are shown in Figure 3.
The electrons leaving the sample are detected by
an electron spectrometer according to their kinetic
energy. The analyzer normally is operated as an
energy "window", accepting only those electrons
having an energy within the range of this fixed win

dow, referred to as the pass energy. Scanning for

different energies is accomplished by applying a
variable electrostatic field, before the analyzer is
reached. This retardation voltage may be varied
from zero up to the photon energy. Electrons are
detected as discrete events, and the number of
electrons for a given detection time and energy is
stored digitally or recorded using analog circuitry.

3. Preparing and Mounting Samples

In the majority of ESCA applications, sample
preparation and mounting are not critical. Typical
ly, the sample can simply be mechanically
attached to the specimen mount and analysis
begun, with the sample in the "as-received" condi
tion. Sample preparation is even discouraged in
many cases, especially where the natural surface
is of interest, since almost any procedure will
tend to modify surface composition. For those
samples where special preparation or mounting
procedures are necessary, the following techni
ques may be used.
A. REMOVAL OF VOLATILE MATERIAL.
Ordinarily any volatile material must be removed
from the sample before analysis, although in ex
ceptional cases, when the volatile layer is of in
terest, the sample may be cooled for analysis.
Removal of volatile materials can be done by
long-term pumping in a separate vacuum
system or by washing with a suitable solvent.
Samples can be washed efficiently in a Soxhlett
extractor with a suitable solvent sufficiently
volatile that it quickly evaporates from the sam
ple after removal from the extractor. Choice of
the solvent can be critical. Hexane or other light
6

PHYSICAL ELECTRONICS

hydrocarbon solvents are probably least likely to

transform the surface, providing the solvent pro
perties are satisfactory. It is desirable to do the
extraction under a nitrogen atmosphere if the
sample is likely to be sensitive to 'oxygen.

B. REMOVAL OF NON-VOLATILE ORGANIC

CONTAMINANTS.
When the nature of an organic contaminant is
not of interest, or when a contaminant obscures
underlying inorganic material that is of interest,
it may be removed in a Soxhlett extractor as
described above. Freshly distilled solvent
should be used to avoid the possibility of con
tamination by high boiling point impurities
within the solvent.
C. SURFACE ETCHING.
Ion sputter-etching or other erosion techniques,
such as the use of oxygen atoms on organic
materials (see Section I.5.E., p. 25), can also be
used to remove surface contaminants. Argon
ion etching is also commonly used to obtain in
formation on composition as a function of depth
into the specimen. It should be noted, however,

that use of these methods for surface removal

>>>

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<<<<<J<<<<
are likely to change the chemical nature of the
surface. Thus, identification of the remaining
chemical states may not accurately reflect the
initial composition.
D. ABRASION.
Abrasion of a surface can be accomplished
without significant contamination by using
silicon carbide paper #600. This does cause
local heating, so that reaction with environmen
tal gases may occur (e.g. oxidation in air and for
mation of nitrides in nitrogen). The roughness
produced will reduce the ESCA signal intensity
relative to that of a smooth sample. Use of this
technique usually provides intense spectra of
metals along with a contribution from the oxides
and/or nitrides that form on the surface. Alkali
and alkaline earth metals cannot be satisfactori
ly prepared in this manner. Spectra of such
samples can be obtained only with rigorous
ultra-high vacuum preparation .and measure
ment conditions.

E. FRACTURE AND SCRAPING.

With proper equipment, many materials can be
fractured or scraped within the test chamber
under ultra-high vacuum conditions. While this
obviates contamination by reaction with at
mospheric gases, attention must nevertheless
be given to unexpected results that can occur.
When fracturing, the fracture might occur along
grain boundaries, for example, and scraping can
cover hard material with soft material when the
system is multi-phase.

F. GRINDING TO POWDER.
Spectra reasonably characteristic of bulk com
position are most frequently obtained on
samples ground to a powder in an alumina mor
tar. Harder surfaces than alumina can be used,
but they are expensive for general use. Again,
protection of the fresh surfaces from the at
mosphere is required. When grinding samples,

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localized high temperatures can also be pro

duced, so grinding should be done slowly to
minimize chemical change at the newly created
surfaces. The alumina mortar should be wellcleaned before re-use, preferably ending with a
concentrated nitric acid cleaning, followed by
rinsing with distilled water, and thorough drying.
G. MOUNTING POWDERS FOR ANALYSIS.
There are a number of methods that can be used
to mount powders for analysis. Perhaps the
most widely used method is to carefully and
lightly dust the powder on polymer film based
adhesive tape with a camel's hair brush. The
powder must be dusted on lightly, with no wip
ing strokes across the powder surface. Many
researchers shun organic tape for UHV work, but
certain types have been used successfully in the
10'9 Torr range.

Alternative methods for mounting powders in

clude pressing the powder into an indium foil,
supporting the powder on a metallic mesh,
pressing the powder into pellets, and simply de
positing the powder by gravity. With the indium
foil method, the powder is pressed between two
pieces of pure foil. The pieces are then
separated and one of them mounted for
analysis. Success with this technique has been
varied. Sometimes bare indium remains expos
ed and, if the sample is an insulator, parts of the
powder can charge differently from other parts.
Differential charging can also be a problem
when a metallic mesh is used to support the
powder. If a press is used to form the powder in
to a pellet of workable dimensions, a press with
hard and extremely clean working surfaces
should be used. If a specimen holder with a
horizontal sample surface is used, the powder
can simply be deposited by gravity in a uniform
layer. With this method, care must be taken in
pumpdown to ensure that gas evolution does
not disturb the powder.
PERKIN-ELMER

>*
H. CONSIDERATIONS OF MOUNTING ANGLE.
In ESCA studies the sample mounting angle is
not critical, but it does have some effect on the
spectra. The use of a shallow electron take-off
angle accentuates the spectrum of any layer
segregated on the surface, whereas a sample
mounting angle normal to the analyzer axis
minimizes the contribution from such a layer.
This effect can be utilized in estimating the
depth of atoms contributing to the spectrum. It
is not limited to planar surfaces, but is even
observed with powders, though the effects are
muted. The geometry of the double pass
cylindrical-mirror analyzer used to obtain the

>>*
spectra presented in this Handbook effectively
integrates over a large range of take-off angles
when used in the normal configuration. This
reduces the effect of variations in sample
geometry and mounting angle to an insignifi
cant level in most cases. However, use of a 50
sample mounting angle in conjunction with the
angle-resolved aperture inside the analyzer
allows the take-off angle to be varied without
changing the sample mounting angle. Thus,
take-off angle effects can be minimized for
routine work, or emphasized when desired (see
Section I.5.E., p. 25)

4. Experimental Procedure
A. EXPERIMENTAL TECHNIQUE FOR OBTAINING
SPECTRA.
All spectra in this Handbook were obtained us
ing a PHI Model 550 ESCA/SAM system. A
schematic diagram of the apparatus, shown in
Figure 4, indicates the relationship of major
components, including the electron energy
analyzer, the x-ray source, and the ion gun used
for sputter-etching. The Model 25-260, Precision
Electron Energy Analyzer, incorporated in the
.ESCA/SAM is a double pass, cylindrical-mirror
type analyzer (CMA) with a retarding grid input
stage. The x-ray source is a standard flangemounted Physical Electronics source which can
be configured with a magnesium or an
aluminum anode. All of the spectra in the Hand
book were taken with an x-ray source power of
600 watts ("IOKv-60 ma). As shown in Figure 4, the
specimens were mounted on the end of the sam
ple introduction probe at an angle of 50 with

PHYSICAL ELECTRONICS

respect to the analyzer axis. The x-ray source is

located perpendicular to the analyzer axis and
the ion beam is nearly normal to the sample

surface.
In the ESCA/SAM System, energy distribution,
energy resolution and the size of the analysis
area are strictly a function of the analyzer. For
all of the spectra in the Handbook the analyzer
was operated in the retarding mode. This gives
an energy distribution function with intensity
proportional to E"1. The retarding grids are used
to scan the spectrum while the CMA is operated
at a constant pass energy. This results in con
stant resolution (AE) across the entire energy
spectrum. The size of the analysis area is de
fined by the size of the circular apertures at the
output of the CMA stages. Analyzer energy
resolution (AE/E) is also determined by these
apertures. In the Precision Electron Energy

<<<<<<<11<<<<<<<<<<<<<<I<<<<<<
COMPUTER
SYSTEM
(MACS)

ANALYZER

CONTROL

ION
GUN

PULSE COUNTING
DETECTION
INNER

X-RAY

CYLINOER

SOURCE

OUTER
CYLINOER

MAGNETIC
SHIELD

ELECTRON
MULTIPLIER

ELECTRON
GUN

SAMPLE PROBE
RETARDING
GRIOS

FIRST
APERTURE

Figure 4.

ANGULAR RESOLVED
APERTURE

SECOND
APERTURE

Schematic representation ot the PHI Model 550, ESCAZSAM system.

Analyzer, three different aperture sizes are

available. All spectra in the Handbook were ob
tained using the largest apertures. Use of the
large apertures results in maximum signal inten
sity, a circular analysis area approximately 5mm
in diameter, and energy resolution which is 2%
of the pass energy.

All spectra obtained while compiling the data

for the Handbook were recorded and stored us
ing a PHI Multiple-technique Analytical Com
puter System. The instrument was calibrated
weekly and the calibration was checked several
times each day during data acquisition. The ana
lyzer work function was determined assuming
the binding energy of the gold 4f7,2 peak to be
83.8 eV. All survey spectra, scans of 1000 eV or
more, were taken at a pass energy of 50 eV, pro
viding an instrumental resolution of 1 eV. The
narrow scans of strong lines are, in most cases,
just wide enough to encompass the peak(s) of

interest and were obtained with a pass energy of

25 eV. The narrow spectra are necessary to
determine accurately the energy and shape of
the strong lines. On insulating samples, a high
resolution spectrum of the adventitious
hydrocarbon on the surface of the sample was
taken to use as a reference for charge correc
tion. It has been experimentally determined that
the binding energy for the adventitious carbon
peak is approximately 284.6 eV.
The samples analyzed to obtain the spectra in
the handbook were standard materials of known
composition. Metal foils and polycrystalline
materials with large surface areas were
mechanically held to the specimen probe.
Powder samples were ground with a mortar and
pestle to expose fresh surfaces and dusted onto
adhesive tape. Most elemental standards were
sputter-etched immediately prior to analysis to
remove surface contaminants. Most comPERKIN-ELMER

pounds, however, were ground and the freshly

exposed surface was analyzed without etching
in order to avoid possible changes in surface
chemistry. Several materials, for example mer
cury, were cooled for the analysis, and xenon
and argon were imbedded in graphite via ion im
plantation just prior to analysis.

B. INSTRUMENT CALIBRATION.
To ensure the accuracy of the data presented in
the Handbook, the instrument used to obtain the
data was calibrated regularly throughout the
data gathering process. The energy scale was
periodically calibrated using a high precision
digital voltmeter. Then, several times each day,
the calibration was checked for accuracy.

The best way to check the calibration, and the

method used here, is to record suitable lines
from a known, conducting specimen. Typically,
the Au4f or Cu2p and 3p lines are used. The lines
should be recorded with a narrow sweep width
in the range of 5-10 eV, and a pass energy of 25
eV or less, corresponding to the pass energy
normally used for high resolution scans, should
be used. The peak position is determined ac
curately by drawing cords parallel to the
baseline and drawing the best straight line or
simple monotonic curve through the midpoints,
as shown in Figure 5. The peaks should occur at
exactly the correct position in the spectrum.

' *

>>

There is not as yet general agreement on ac

curate values of any standard line energies, but
at this point the following is recommended for
clean gold and copper (on a binding energy
scale):

932.4 eV
567.9 eV (Al radiation)
334.9 eV (Mg radiation)
74.9 eV
Cu3p3/2
83.8 eV
Au4f7/2
Since the 2p3)2 and 3p3/2 photoelectron peak
energies of copper are widely separated in
energy, measurement of these peak binding
energies provides a quick and simple means of

Cu2p3,2
Cu (L3M5M5)

checking the magnitude of the binding energy

scale. Utilizing all of the above standard
energies establishes the magnitude and lineari
ty of the energy scale and its position, i.e., the
location of the Fermi level.
C. PROGRAMMING SCANS FOR AN UNKNOWN
SAMPLE.
For a typical ESCA investigation where the sur
face composition is unknown, a broad scan
survey spectrum should be obtained first to
identify the elements present. Once the elemen
tal composition has been determined, narrower
detailed scans of selected peaks can be used
for a more comprehensive picture of the
chemical composition. This is the procedure
that has been followed in compiling data for the
Handbook, even though specimen composition
was known prior to analysis.

scan range from

1000-0 eV binding energy is sufficient for the
identification of all detectable elements. In a
few cases, such as with Zn, Mg, and Na, the
strongest lines may occur at a binding energy
above this range. Most spectra in this Hand
book were recorded with scan ranges of
1000-0 or 1100-0 eV binding energy. There are

(PSurvey Scans. Ordinarily, a

Figure 5.

10

Method for accurately locating the peak position

from a narrow scan.

PHYSICAL ELECTRONICS

<

<<<<<<<<

< <

< < <

<

<

< <

a few, especially where AIKo x-rays were

used, that cover a wider range. In an unknown

analysis, to obtain good counting statistics

and clear spectra.

sample, if specific elements are suspected at

low concentrations, their standard spectra
should be consulted before programming the
survey scan. If the strongest line occurs
above 1000 eV binding energy, the scan range
can be modified accordingly.

ii. Peaks from any species thought to be

radiation-sensitive or transient should be
run first. Otherwise any convenient order
may be chosen.

An analyzer pass energy of 100 eV, in conjunc

tion with the normal ESCA aperture settings,

is recommended for survey scans with the

ESCA/SAM system. These settings result in
adequate resolution (AE = 2eV) for elemental
identification and produce very high signal in
tensities, minimizing data acquisition time
and maximizing elemental detectability.
(2) Detail Scans. For purposes of chemical state

identification, for quantitative analysis of

minor components and for peak deconvolution and other mathematical manipulations of
the data, detail scans must be obtained for
precise peak location and for accurate
registration of line shapes. There are some
logical rules for this programming:

i.Scans should be wide enough to encom

pass the background on both sides of the
region of interest, yet narrow enough, less
than 25 eV, to permit determination of the
exact position of the peaks. If these re
quirements cannot be met in one region,
two regions of the spectrum must be pro
grammed. Sufficient scanning must be
done, within the time limitations of the

iii.lf the C1s line is to be used for charge

referencing, it should preferably be run ear
ly and again late in the sequence or, alter
natively, run at a time closest to the region
of greatest interest. This is because there
is occasionally a slight change in steadystate static charge with time (cf Section
I.5.C., p. 17).

iv.No clear guidelines can be given on the

maximum duration of data gathering on
any one sample. It should be recognized,
however, that chemical states have vastly
varying degrees of radiation sensitivity,
and for any one set of irradiation condi
tions there exists for many samples a
period beyond which it is impractical to at
tempt to gather data.

v.With the ESCA/SAM, an analyzer pass

energy of 25 eV (AE = 0.5 eV) is normally
adequate for routine detail scans. Where
higher resolution is needed, lower pass
energies can be utilized with correspon
ding loss of signal intensity. For the
ultimate in resolution, the smaller aper
tures should be used in conjunction with
an analyzer pass energy of 10 or 15 eV.

PERKIN-ELMER

11

>>

>>> >

5. Data Interpretation
A. THE NATURE OF THE SPECTRUM
(DGeneral Features.

The spectrum is displayed

as a plot of electron binding energy versus the
number of electrons in a fixed, small energy
interval. The position on the kinetic energy
scale equal to the photon energy minus the
spectrometer work function corresponds to a
binding energy of zero with reference to the
Fermi level (equation 1). Therefore, a binding
energy scale beginning at that point and in
creasing to the left is customarily used.

The spectra in this Handbook are typical for

the various elements. The well-defined peaks
are due to electrons that have not lost energy
in emerging from the sample. Electrons that
have lost energy form the raised background
at binding energies higher than the peaks.
The background is continuous because the
energy loss processes are random and
multiple.

The "noise" in the spectrum is not instrumen

tal, but is the consequence of the collection
of single electrons as counts randomly
spaced in time. The standard deviation for
counts collected in any channel is equal to
the square root of the counts, so that the per
cent standard deviation is 100/ (counts)"2. The
signal/noise ratio is then proportional to the
square root of the counting time. The
background level upon which the peak is
superimposed is a characteristic of the
specimen and the transmission charac
teristics of the instrument.
(2)Kinds of Lines. Several types of peaks are

observed in ESCA spectra. Some are fun

12

PHYSICAL ELECTRONICS

damental to the technique, and are always

observed. Others are dependent upon the ex
act physical and chemical nature of the sam
ple. The following describes the various spec
tral features that are likely to be encountered.
i.Photoelectron Lines. The most intense of
the photoelectron lines are usually relative
ly symmetrical and are typically the nar
rowest lines observed in the spectrum.
Photoelectron lines of pure metals can,
however, exhibit considerable asymmetry
due to coupling with conduction electrons.
Peak width is a convolution of the natural
line width, the width of the x-ray line and
the instrumental contribution to the line
width. Less intense photoelectron lines at
higher binding energies are usually wider
by 1-4 eV than the lines at lower binding
energies. All of the photoelectron lines of
insulating solids are of the order of 0.5 eV
wider than photoelectron lines of conduc
tors. The approximate binding energies of
all photoelectron lines detectable are
catalogued in Tables 1-4 of the Appendix.
ii. Auger Lines. These are, more properly,
groups of lines in rather complex patterns.
There are four main Auger series obser
vable in ESCA. They are the KLL, LMM,
MNN, and NOO series, identified by speci
fying the initial and final vacancies in the
Auger transition. The KLL series, for exam
ple, includes those processes with an in
itial vacancy in the K shell and final double
vacancy in the L shell. The symbol V, e.g.
KVV, indicates that the final vacancies are
in valence levels. The KLL series has,
theoretically, nine lines and others have

<4<<<<<<<<<<
still more. Since Auger lines have kinetic
energies that are independent of the ioniz
ing radiation they appear on a binding
energy plot to be in different positions
when ionizing photons of different energy
(i.e. different x-ray sources) are used. Coretype Auger lines (with final vacancies
deeper than the valence levels) usually
have at least one component of intensity
and width similar to the most intense
photoelectron line. Positions of the more
prominent Auger components are
catalogued along with the photoelectron
peaks in Tables 1 through 4 in the

Appendix.
iii. X-ray Satellites. The x-ray emission spec
trum used for irradiation exhibits not only
the characteristic x-ray, but some minor
x-ray components at higher photon
energies. For each photoelectron peak that
results from the Ka x-ray photons, there is a
family of minor peaks at lower binding
energies, with intensity and spacing
characteristic of the x-ray anode material.
The pattern of such satellites for Mg and Al
is shown in Figure 6 and Table 1.

--

----r

Table 1

< < < < <

X-ray satellite energies and intensities

l,2

<*4

<*5

displacement, eV 0 8.4 10.2 17.5 20.0 48.5

9 relative height
100 8.0 4.1 0.55 0.45 0.5
A|

displacement, eV 0 9.8 11.8 20.1 23.4 69.7

100 6.4 3.2 0.4 0.3 0.55
relative height

iv. X-ray "Ghosts". Occasionally x-radiation

from an element other than the x-ray
source anode material impinges upon the
sample, resulting in small peaks cor
responding to the most intense spectral
peaks, but displaced by a characteristic
energy interval. These lines can be due to
Mg impurity in the Al anode, or vice versa,
Cu from the anode base structure or
generation of x-ray photons in the
aluminum foil x-ray window. On occasion,
such lines can originate via generation of
x-rays within the sample itself. This last
possibility is rare, because the probability
of x-ray emission is low relative to the
Auger transition. Nevertheless, such minor
lines can be puzzling. Table 2 indicates
where such peaks are most likely to occur,
relative to the most intense photoelectron
lines. Since the appearance of "ghost"
lines is a rare occurrence, they should not
be considered in line identification until all
other possibilities are excluded.
Table 2

Displacements of x-ray "ghost" lines

(Apparent binding energy of the "ghost" line minus that of the

parent photoelectron line.)

Contaminating Radiation

3Q0

Figure 6.

290

280

270

260 250 240 230

BIN0ING ENERGY, eV

220

210

Mg x-ray satellites (C1s graphite spectrum).

200

Anode Material
Mg

Al

O (Ka)

728.7

961.7

Cu (La)

323.9

556.9

Mg (Ka)

233.0

Al (Ka)

-233.0

PERKIN-ELMEFl

13

>)>)>

*>>*>>>>>>>>)

v. Shake-Up Lines. Not all photoelectric pro

cesses are simple ones, leading to the for
mation of ions in the ground state. Rather
often, there is a finite probability that the
ion will be left in an excited state, a few
electron volts above the ground state. In
this event, the kinetic energy of the emitted
photoelectron is reduced, with the dif
ference corresponding to the energy dif
ference between the ground state and the
excited state. This results in the formation
of a satellite peak a few electron volts
lower in kinetic energy (higher in binding
energy) than the main peak. As an example,
the characteristic shake-up line for carbon
in unsaturated compounds, a shake-up pro
cess involving the energy of the n n* tran
sition, is shown in Figure 7.

CuO

CIs

*10

970

Figure 8.
Figure 7.

The n-bond shake-up satellite for the C1s line in

polystyrene.

In some cases, most often with

paramagnetic compounds, the intensity of
the shake-up satellite may approach that of
the main line. More than one satellite of a
principal photoelectron line can also be
observed, as shown in Figure 8. The occur
rence of such lines is sometimes more ap
parent in Auger spectral contours, of which
14

PHYSICAL ELECTRONICS

960

950
940
BINDING ENERGY, eV

930

Examples of shake-up lines observed with the

copper 2p spectrum.

an example is presented in Figure 9. The

displacements and relative intensities of
shake-up satellites can sometimes be
useful in identifying the chemical state of
an element, as discussed in Section I.5.C.,
p. 20.

vi. Multiplet Splitting. Emission of an electron

from a core level of an atom that itself has
a spin (unpaired electrons in valence levels)

<

i i i i i i i

<

<<<<<<<<<<<<<<<<<<<<
Cr METAL
N(E)

E
N(E|

NiO

575

555

535

515

495 475 455 435

BINDING ENERGY. eV

415

395

375

88

Figure 9.

86

can create a vacancy in two or more ways.

The coupling of the new unpaired electron
left after photoemission from an s-type or
bital with other unpaired electrons in the
atom can create an ion with either of two
configurations and two energies. This
results in a photoelectron line that is split
asymmetrically into two components
similar to the one shown in Figure 10.
Splitting also occurs in the ionization of p
levels, but the result is more complex and
subtle. In favorable cases, it results in an
apparent slight increase in the spin doublet
separation, evidenced in the separation of
the 2p,(2 and 2p3(2 lines in first row transi
tion metals, and the generation of a less
easily noticed asymmetry in the line shape
of the components. Often such effects on
the p doublet are obscured by shake-up

lines.

84

82

80
BINDING

Some effects of chemical state on Auger line

shapes.

Figure 10.

78

76

74

72

70

68

ENERGY. eV

Multiplet splitting in the Cr 3s line.

vii. Energy Loss Lines. With some materials,

there is an enhanced probability for loss of
a specific amount of energy due to interac
tion between the photoelectron and other
electrons in the surface region of the sam
ple. An example of this is shown in Figure
11. The enhanced probability of energy loss
produced a distinct and rather sharp hump
at an energy about 21 eV above the binding
energy of the parent line. Under certain
conditions of spectral display, energy loss
lines can cause confusion. Such
phenomena in insulators are rarely sharper
than that shown in Figure 11, and are
usually much more muted. They are, of
course, different in each solid medium.
With metals, the effect is often much more
dramatic, as indicated by the loss lines for
PERKIN-ELMER

15

* * * *

> >

>

>

I I I

>

>}))))))>))))

plasmons" are the more prominent of

these lines. A second series, the "surface
plasmons", exists at energy intervals deter
mined by dividing the bulk plasmon energy
by \f2. The effect is not easily observable
in non-conductors, nor is it prominent in all
conductors.

Figure 11.

Energy loss envelope from the 01s line in SiO,.

aluminum shown in Figure 12. Energy loss

to the conduction electrons occurs in welldefined quanta characteristic of each
metal. The photoelectron line, or the Auger
line, is successively mirrored at intervals of
higher binding energy, with reduced inten
sity. The energy interval between the
primary peak and the loss peak is called
the plasmon energy. The so-called "bulk

N(E)

Figure 12.

16

B. LINE IDENTIFICATION
In general, interpretation of the ESCA spectrum
is most readily accomplished by first identifying
the lines that are almost always present,
specifically those of carbon and oxygen, then
identifying major lines and associated weaker
lines and, lastly, identifying the remaining weak
lines. The following step-by-step procedure
generally simplifies the data interpretation task
and minimizes data ambiguities.

StepjL The C1s, 01s, C(KLL) and O(KLL) lines

are usually prominent in any spectrum. Iden
tify these lines first along with all derived
x-ray satellites and energy loss envelopes.

190

viii. Valence Lines and Bands. Lines of low in

tensity occur in the low binding energy
region of the spectrum between the Fermi
level and about 10-15 eV binding energy.
These lines are produced by photoelectron
emission from molecular orbitals and from
solid state energy bands. Differences be
tween insulators and conductors are
especially noted by the absence or
presence of electrons from conduction
bands at the Fermi level.

182

174

166 158 150 142 134

BINDING ENERGY, eV

126

118

110

Energy loss (plasmon) lines associated with the

2s line of aluminum (a = 15.3eV; note surface
plasmon at b).

PHYSICAL ELECTRONICS

Step 2. Identify other intense lines (cf Appen

dix Tables) present in the spectrum. Then
label any related satellites and other less in
tense spectral lines associated with those
elements. Keep in mind that some lines may
be interfered with by more intense, overlap
ping lines from other elements. The most

serious interferences by the carbon and oxy

gen lines, for example, are Ru3d by C1s, V2p
and Sb3d by 01s, l(MNN) and Cr(LMM) by
O(KLL), and Ru(MNN) by C(KLL).

StepJL Identify any remaining minor lines. In

doing this, assume they are the most intense
lines of an unknown element. If not, they
should already have been identified in
previous steps. Again, possible line in
terferences should be kept in mind. Small
lines that seem unidentifiable can be ghost
lines. This possibility can be checked for the
more intense parent photoelectron lines us
ing Table 2 (p. 13).
Step 4. Check the conclusions by noting the
spin doublets for p, d, and f lines. They should
have the right separation (cf Appendix Tables
1 and 2, pp. 182 and 184) and should be in the
correct intensity ratio. The ratio for p lines
should be about 1:2, d lines 2:3, and f lines 3:4
except that p lines, especially 4p lines, may
be less than 1:2.

C. CHEMICAL STATE IDENTIFICATION

The identification of chemical states depends
primarily upon the accurate determination of
line energies. To determine line energies ac
curately, the voltage scale of the instrument
must be precisely calibrated (cf Section I.4.B.,
p. 10), a line with a narrow sweep range must be
recorded with good statistics (of the order of
several thousand counts per channel above
background), and accurate correction must be
made for static charge if the sample is an
insulator.
(1) Determination of

Static Charge on Insulators.

During analysis, insulating samples tend to
acquire a steady-state charge of as much as
several volts. This steady-state charge is a
balance between electron loss from the sur

face by emission and electron gain by con

duction or by acquisition of slow or thermal
electrons from the vacuum space. The steadystate charge, usually positive, can be
minimized by adding slow electrons to the
vacuum space with an adjacent neutralizer or
flood gun. It is often advantageous to do this
to reduce differential charging and to sharpen
the spectral lines.
A serious problem is the exact determination
of the extent of charging. Any positive charg
ing adds to the retardation and tends to make
the peaks appear at higher binding energy,
whereas excessive compensation can make
the peaks shift to lower binding energy. The
following are five methods that are usually
valid for charge correction on insulating
samples:

i. Measurement of the position of the C1s

line from adventitious hydrocarbon nearly
always present on samples introduced
from the laboratory environment or from a
glove box. This line, on unsputtered inert
metals such as gold or copper, appears at
284.6 eV, so any shift from this value can be
taken as a measure of the static charge.
(Much of the literature uses the more ap
proximate value of 285). At this time, it is
not known whether a reproducible line
position exists for carbon remaining on the
surface after ion beam etching.

ii. Evaporation of a trace of gold onto the

sample after the spectra have been record
ed. The Au4f doublet is then recorded as
well as a repetition of the most important
line in the sample spectrum. It is then
assumed that the potential of the gold
islands reflects the new steady-state
charge of the surface of the sample. Care
PERKIN-ELMER

17

>>>>>>>>>> >>>>>>>>
must be taken to ensure that the gold is
present in trace quantities so that the
original spectrum is little affected. In this
procedure there may well be a double cor
rection. The steady-state potential after
gold is deposited may well be different
from the steady-state potential in the
original sample before gold deposition.

iii.The use of an internal standard, such as a

hydrocarbon moiety in the sample. The
value of 284.6 eV for the C1s line is
recommended.

iv.The use of an insulating sample so thin

that it effectively does not insulate. This
can be assumed if the spectrum of the
underlying conductor appears in good in
tensity and line positions are not affected
by changes in electron flux from the charge
neutralizer.

v.For the study of supported catalysts or

similar materials, one can adopt a suitable
value for a constituent of the support and
use that to interrelate binding energies of
different samples. One must be certain that
treatments of the various samples are not
so different that the inherent binding
energies of support constituents are
changed.
Some precautions should be borne in mind. If
the sample is heterogeneous on even a
micrometer scale, particles of different
materials can charge to different extents, and
interpretation of the spectrum is complicated
accordingly. One cannot physically mix a con
ducting standard like gold or graphite of
micron dimensions with a powder and validly
use the gold or graphite line in order to cor
rect for static charge.
18

PHYSICAL ELECTRONICS

(2)Photoelectron Line Chemical Shifts

and

Separations. An important advantage of

ESCA is the ability to obtain information on

chemical states from the variations in binding
energies, or chemical shifts, of the photoelectron lines. This has been extremely useful in
many studies. While many attempts have
been made to calculate chemical shifts and
absolute binding energies, the factors in
volved, especially in the solid state, are im
perfectly understood and one must rely on ex
perimental data on standard materials. The
tables accompanying the spectra in this
Handbook record considerable data from the
literature as well as data obtained specifically
for this Handbook. All literature data have
been carefully evaluated and corrected, and
are believed reliable.0" These data have been
adjusted to the instrumental calibration and
static charge reference values given above,
and are, therefore, directly compa'rable.
Since occasional line interferences do occur,
it is sometimes necessary to use a line other
than the most intense one in the spectrum.
Chemical shifts are very uniform among the
photoelectron lines of an element, so that line
separations rarely vary by more than 0.2 eV.
However, exceptional separations can occur
in paramagnetic materials because of
multiplet splitting. Separations of photoelec
tron lines can be determined approximately
from Tables 1 and 2 in the Appendix (pp. 182
and 184).

Line Chemical Shifts and the Auger

Parameter. Core-type Auger lines (transitions

(3)Auqer

(a) In some cases, different binding energy values appearing in

the literature for the same material could not be reconciled,
and no grounds could be found for choosing one over the
other. In such cases, more than one value is included to
indicate the degree ol uncertainty.

<<<<<<<<<<<<<<<<<<<<<
ending with double vacancies below the
valence levels) usually have at least one com
ponent that is narrow and intense, often near
ly as intense as the strongest photoelectron
line (cf. spectra for F, Na, As, In, Te, and Pb).
There are four core Auger groups that can be
generated by Mg or Al x-rays: the KLL (Na,
Mg); the LMM (Cu, Zn, Ga, Ge, As, and Se); the
MNN (Ag, Cd, In, Sn, Sb, Te, I, Xe, Cs, and Ba);
and the NOO (Au, Hg, Tl, Pb, and Bi). The
MNN lines in the rare earths, while accessi
ble, are very broad because of multiplet split
ting and shake-up phenomena with most of
the compounds. Valence-type Auger lines
(final states with vacancies in valence levels),
such as those for 0 and F (KLL); Mn, Fe, Co,
and Ni (LMM); and Ru, Rh, and Pd (MNN), can
be intense and are, therefore, also useful.
Chemical shifts occur with Auger lines as
well as with photoelectron lines. The
chemical shifts are different from those of the
photoelectron lines, however, and usually are
considerably more pronounced. This can be
very useful for identification of chemical
states, especially in combination with
photoelectron chemical shift data. If data for
the various chemical states of an element are
plotted, with the kinetic energy of the
photoelectron line on the abscissa and that of
the Auger line on the ordinate, a twodimensional chemical state plot is obtained.
Such plots accompany the spectra for F, Na,
Cu, Zn, As, Ag, Cd, In, and Te.
With chemical states displayed in two dimen
sions, the method becomes more powerful as
a tool for identifying the chemical com
ponents. In the format adopted for the Hand
book, the kinetic energy of the Auger line is
plotted against the binding energy of the
photoelectron line, with the latter plotted in
the -x direction (kinetic energy is still, im

<<<<<<<<<
plicitly, + x). the kinetic energy of the Auger
electron, referred to the Fermi level, is easily
calculated by subtracting from the photon
energy the position of the Aug'er line on the
binding energy scale.

With this arrangement, each diagonal line

represents all values of equal sums of Auger
kinetic energy and photoelectron binding
energy. A quantity called the Auger
parameter, a, is defined as,
cf

KEa

KEP

BEP BEa

(2)

or, the difference in binding energy between

the photoelectron and Auger lines. This dif
ference can be accurately determined
because static charge corrections cancel.
Then, with all kinetic energies and binding
energies referenced to the Fermi level,
KEp = hv

KEa +

BEa

BEp = hv

(3)

(4)

or, the sum of the kinetic energy of the Auger

line and the binding energy of the photoelec
tron line equals the Auger parameter plus the
photon energy. A plot showing Auger kinetic
energy versus photoelectron binding energy
then becomes independent of the energy of
the photon.
In general, polarizable materials, especially
conductive materials, have a high Auger
parameter, while insulating compounds fall
lower on the grid. The points on the twodimensional plot are drawn as rectangular
boxes at 45, reflecting the expected error of
measurement in the two perpendicular direc
tions. At present, sufficient data for the twodimensional chemical state plots are
available only for the nine elements listed

above.
PERKIN-ELMER

19

>>>> >>>>
(4)Chemical Information From Satellite Lines
and Peak Shapes.
i.Shake-up Lines. These satellite lines have

intensities and separations from the parent

photoelectron line that are unique to each
chemical state (Figure 8). Some Auger lines
also exhibit radical changes with chemical
state that reflect these processes (Figure
9). With transition elements and rare earths
the absence of shake-up satellites is usual
ly characteristic of the elemental or

diamagnetic states. Prominent shake-up

patterns typically occur with paramagnetic
states. Table 3 has been included as a
guide to some expected paramagnetic
states.
ii.Multiplet Splitting. On occasion, the

multiplet splitting phenomenon can also

be helpful in identifying chemical states.
The 3s lines in the first series of transition
metals, for example, exhibit separations
characteristic of each paramagnetic

Table 3
General guide to paramagnetic species
Multiplet splitting and shake-up lines are generally expected in the paramagnetic states below.

Atomic No.

Piamagnetic States

Paramagnetic States

Ti + 4

22

Ti + 2,

Ti+3

23

V + 2,

y+3

24

Cr + 2, Cr + 3, Cr + 4, Cr + 5
Mn + 2, Mn+3, Mn + 4, Mn + 5

Cr + 6
Mn + 7

Fe + 2, Fe + 3
oo + to oo + co

IFe (CN)6, Fe (CO)4Br2

25

26
27
28

v +4

Ni + 2
Cu + 2

v+5

CoB, Co(N02)3(NH3)3, K3Co(CN)6,Co(NH3)6CI3

K2Ni(CN)4, square planar complexes

44

Mo + 4, Mo + 5
Ru + 3,Ru+4, Ru + 5

Cu + 1
Mo + 6, MoS2, MofCNJa
Ru + 2

47

Ag + 2

Ag + 1

58

Ce + 3

Ce + 4

59-70

Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho,

29

42

Er, Tm, Yb compounds

W + 6, W02, WCI4, WC, K4W(CN)8

75

W + 4,W + 5
Re + 2,Re + 3,Re + 4,Re + 5,Re + 6

76

Os + 3,Os + 4,Os + 5

Os + 2,Os"l'6,Os + 8

77

lr +
U + 3,U + 4

74

92

20

physical electronics

Re + 7,

lr + 3
U+6

Re03

4<<<<<<4<<4<<<<<1<<1<114<1<4<
chemical state. The 3s line, however, is
weak and therefore is not often useful
analytically. The 2p doublet separation is
also affected by multiplet splitting and the
lines are more intense. The effect becomes
very evident with cobalt compounds where
the separation varies up to one electron
volt. Little utilization of this effect has yet
been made. However, when first row transi
tion metal compounds are under study, it
may prove useful to record accurately
these line separations and make com
parisons with model compounds.

iii.Auger Line Shape. Valence type Auger tran

sitions form final-state ions with vacancies
in molecular orbitals. The distribution of
the group of lines is strongly affected,
therefore, by the nature of the molecular or
bitals in the different chemical states.
Although little has yet been published on
this subject, the spectroscopist should
bear in mind the possible utility of Auger
line shapes of oxygen, fluorine, the first
row transition metals (Sc-Ni), and Ru, Rh,
and Pd.
D. QUANTITATIVE ANALYSIS
For many ESCA investigations, it is important to
determine the relative concentrations of the
various constituents. Methods for quantifying
the ESCA measurement utilizing peak area sen
sitivity factors and peak height sensitivity fac
tors have been developed. The method which
utilizes peak area sensitivity factors typically is
the more accurate and is discussed below. The
method for determining peak height and peak
area is shown in Figure 13. This approach is
satisfactory for quantitative work except with
transition metal spectra with prominent shakeup lines. For these, it is often better to include
the entire 2p region when measuring peak area.

lli

\\
/

VERTICAL HEIGHT,
PEAK TO BASELINE

\
\

WIDTH PARALLEL TO
BASELINE AT HALF THE

HEIGHT

--

---

TANGENTIAL BASELINE
DELINEATING AREA

Figure 13.

Method for determining height, width, and area

of a photoelectron peak.

For a sample that is homogeneous in the

analysis volume, the number of photoelectrons
per second in a specific spectral peak is given
by:

I = nfoSyAAT

(5)

where n is the number of atoms of the element

per cm3 of sample, f is the x-ray flux in
photons/cm2-sec, a is the photoelectric crosssection for the atomic orbital of interest in cm2,
9 is an angular efficiency factor for the in
strumental arrangement based on the angle bet
ween the photon path and detected electron, y is
the efficiency in the photoelectric process for
formation of photoelectrons of the normal
photoelectron energy, A is the mean free path of
the photoelectrons in the sample, A is the area
of the sample from which photoelectrons are
detected, and T is the detection efficiency for
electrons emitted from the sample. From (5):

n = l/fo0yAAT
PERKIN-ELMER

(6)

21

>>>>

>> >

The denominator in equation 6 can be assigned

the symbol S, defined as the atomic sensitivity
factor. If we consider a strong line from each of
two elements, then:

n,
1,/S,
=
n2
12' 2

-W-

>>>>>>>>>
characteristics of the double pass cylindricalmirror type analyzer supplied by Physical Elec
tronics. An example of the application of equa
tion 8 to analysis of a nearly ideal sample,
polytetrafluoroethylene, is shown in Figure 14.

(7>

-:--:------;

F Is

This expression may be used for all

homogeneous samples if the ratio S,/S2 is matrix
independent for all materials. It is certainly true
that such quantities as o and A vary somewhat
from material to material (especially A), but the
ratio of each of the two quantities o,/o2 and A,/A2,
remains nearly constant. Thus, for any spec
trometer, we may develop a set of relative values
of S for all of the elements.
A generalized expression for determination of
the atom fraction of any constituent in a sample,
Cx, can be written as an extension of equation 7:

Ux

2j n,
I

v
2/|./s,

(8)

a) J. H. Scofield, J. Elect. Spectr. 8, 129 (1976).

PHYSICAL ELECTRONICS

"\l

F AUGER

-600
1000
800
1

i
1

400
BINDING ENERGY, eV

Figure 14.

C 1s
[

F2*

iiss

200

Quantitative analysis of polytetrafluoroethylene

(by peak area of F1s and C1s).

The use of atomic sensitivity factors in the man

ner described will normally furnish semiquan
titative results (within 10-20%) except in the
following situations.

Values of S based on peak area measurements

are indicated in Table 5 of the Appendix. These
values are presented relative to the F1s intensity,
which has been used as a standard. The values
of S in the Appendix are based upon calculated
values of oa) which have been corrected for the
kinetic energy dependence of the spectrometer
detection efficiency and an average value for the
dependence of A on kinetic energy of E0-75 (Figure
3). The values in the Appendix are only valid for,
and should only be applied, when the electron
energy analyzer used has the transmission

22

COMPOSITION: ATOMIC PERCENT

THEORETICAL
EXPERIMENTAL
32.2
33.3
C
67.7
66.7
F

(1)The technique cannot be applied rigorously to

heterogeneous samples. It can be useful with
heterogeneous samples in obtaining results
in terms of the relative number of atoms
detected, but one must be conscious that the
microscopic character of the heterogeneous
system influences the quantitative results.
Moreover, an overlying contamination layer
has the effect of diminishing high binding
energy peaks more than those with low
binding energies.

(2)Transition metals, especially of the first

series, have widely varying and low values of
y, whereas y for the other elements is rather

,< ,

<

< <

uniform at about 0.8. Thus, a value of S deter

mined on one chemical state for a transition
metal may not be valid for another chemical
state.
(3)When peak interferences occur, alternative
lines must sometimes be used. The ratios of
spin doublets (except 4p) are rather uniform
and the weaker of the pair can often be
substituted. Figure 15 is a general guide to
the relative peak height of the minor lines.
However, with the minor lines, there is much
variation in relative peak heights and widths,
so the figure should be regarded as a semi
quantitative guide, of the order of 30%. The
sample spectra of the elements may also be
consulted, but caution must be exercised,
since the spectra of the elements themselves
can be somewhat different, quantitatively,
from the spectra of their compounds.
Occasionally an x-ray satellite from an in
tense photoelectron line interferes with
measurement of a weak component. A
mathematical approach can then be used to
subtract the x-ray satellite before the

measurement.
For quantitative work it is advisable to check the
spectrometer operation frequently to ensure
that analyzer response is constant and op
timum. A useful test is the recording of the three
widely-spaced spectral lines from copper.
Measurement of peak height in counts per se
cond should be made on 20 volt wide scans of
the 2p3/2, LMM Auger, and 3p lines, and the peak
width of the 2p3,2 line should be measured as

shown in Figure 13. Maintenance of such

records makes it easily noticeable if an in
strumental change occurs that would affect
quantitative analysis.

E. DETERMINATION OF ELEMENT LOCATION

(1) Deth. There are four methods of obtaining in
formation on the depth of an element in the
sample. The first two methods below utilize
the characteristics of the spectrum itself, but
provide limited information. The third, depth
profiling by erosion of the surface, provides
more detailed information but is attended by
certain problems. The fourth utilizes
measurements at two or more electron
escape angles.

i.The presence or absence of an energy loss

peak or envelope indicates whether the
emitting atoms are in the bulk or at the sur
face. Since electrons from surface atoms
do not traverse the bulk, peaks due to the
surface atoms are symmetrical above level
baselines on both sides and the energy
loss peak is absent.

ii.Elements whose spectra exhibit photoelectron lines widely spaced in kinetic

energy can be approximately located by
noting the intensity ratio of the lines. In the
energy range above approximately 100 eV,
electrons moving through a solid with
lower kinetic energy are attenuated more
strongly than those with higher kinetic
energy. Thus, for a surface species, the low
kinetic energy component will be relatively
stronger than the high kinetic energy com
ponent, compared to that observed in the
pure material. The data in Figure 15 for
homogeneous bulk solids can be com
pared with intensity ratios observed on
unknowns to determine qualitatively the
distribution of the element in the sample.
Suitable elements include Na and Mg (1s
and 2s); Zn, Ga, Ge, and As (2p3,2 and 3d);
and Cd, In, Sn, Sb, Te, I, Cs, and Ba (3p3,2
and 4d, or 3d5(2 and 4d).
PERKIN-EL.MER

23

>>>>>>>>)>>>>>>>>>>>>>>>>>>>

Kt-ijWj

l3mZjV

L3M,SM,S

Figure 15.

24

Peak heights of minor lines relative to strong lines (based on survey spectra contained herein).

PHYSICAL ELECTRONICS

4
For the situation where the element is in a
bulk homogeneous layer beneath a thin
contaminating layer the characteristic in
tensity ratio is modified in the opposite
direction. Thus, for a pair of lines due to
subsurface species, the low kinetic energy
line will be attenuated more than the high
kinetic energy line, distorting the
characteristic intensity ratio, By observing
such intensity ratios and comparing them
with the values for pure bulk elements
(Figure 15), it is possible to deduce whether
the observed lines are due to predominant
ly surface, subsurface, or homogeneously
distributed material.

iii.Depth profiling can be accomplished by

controlled erosion of the surface by ion
sputtering. In Table 4 are presented some
data on sputter rates as a general guide.
One can use this technique on organic
materials, but few data are available for
calibration. Chemical states are usually
changed by the sputter technique, but
useful information on elemental distribu
tion still can be obtained.
Table 4

Some representative sputter rates

(2 keV argon ion beam

sample)

with 100 y amps/cm1 impinging on

Target

Sputter Rate,

Ta205

100

Si

Si02

90
85

A/mina>

1 i

Another method of controlled erosion that

is useful, especially with organic materials,
is reaction with oxygen atoms from a
plasma. This technique may also change
the chemical states in the affected surface.
Further, since the elements differ in their
rates of reaction with oxygen atoms, the
rate of removal of surface materials will be
somewhat sample dependent.
iv.One may alter the angle between the plane
of the sample surface and the angle of en
trance to the analyzer. At 90, with respect
to the surface plane, the signal from the
bulk is maximized relative to that from the
surface layer. At small angles, the signal
from the surface becomes greatly en
hanced, relative to that from the bulk. The
location of an element can thus be deduc
ed by noting how the magnitude of its
spectral peaks change with sample orien
tation in relation to those from other
elements.
The electron energy analyzer used in the
ESCA/SAM incorporates a special aperture
arrangement that permits angular resolved
studies. An example of the information that
can be gained through the use of this
capability is shown in Figure 16. Data were
obtained at high (near 90) and low (near
15) exit angles from a silicon sample with
a thin silicon oxide overlayer. The observed
intensity ratio of oxidized to elemental
silicon is much greater at the small exit
angle.

Pt

220

Cr

140

(2)lnsulating Domains on a Conductor. The oc

Al

95

currence of steady-state charging of an in

sulator during analysis sometimes has useful
consequences. Microscopic insulating do
mains on a conductor reach their own steady-

Au
a) 20%.

410

PERK1N-ELMER

25

>>

-r

-1-1

Al METAL

P\

ai2o3 in contact
WITH Al

\\

AljOj
INSULATED

N(E)

/
/

NO
SPECIMEN

\7/

1
1

1
1

NEUTRALIZER /

L.

N.

j *
l***

114

Figure 16.

112

110

108

sample with approximately one monolayer Si02

overlayer). Angles indicated are electron take-off
angles relative to specimen surface.

PHYSICAL ELECTRONICS

>

,iii

128

Figure 17.

126

124

/'\

/ \
/ '1\ \

\ J

122 120 118

BINDING ENERGY, eV

/
/

NEUTRALIZER

LN

'

SPECIMEN

\\

ON WITH HIGHER
BIAS VOLTAGE

26

1
|

130

/
/

Use of different electron escape angles to deter

mine depth distribution (Si 2p line from silicon

state charge, while the conductor remains at

spectrometer potential. Thus, an element in
the same chemical state in both phases will
exhibit two peaks. If a change is made in the
supply of low energy electrons which stabilize
the charge, as from the neutralizer filament,
or if a bias is applied to the conductor, the
spectral peaks from the insulating phase will
move relative to those from the conducting
phase, as shown in Figure 17. For such
heterogeneous systems, this is an extremely
useful technique. It makes it possible to
determine whether the elements that con
tribute to the overall spectrum are in the con
ducting or the insulating phase, or in both
phases.

l\
1 \

SPECIMEN
NEUTRALIZER
ON

106
104 102 100
BINDING ENERGY, eV

----

> >

116

114

112

110

Use of specimen neutralizer to shift the partial

spectrum from insulating domains (Al 2s lines
from Al203 on aluminum sample).

(3)Surface Distribution. ESCA is not ordinarily

used to obtain information on X-Y distribution

because a large analysis area is required for

good signal intensity. With the PHI double
pass cylindrical-mirror analyzer used in the
ESCA/SAM, however, a circular area of 2-5

mm diameter can be imaged, depending upon

the apertures in use and the retarding condi-

>

> | >

<4I<<I4<<<<4<< J<<<<4<4<<<<<<<<<
tions. This area is expressed as the full width
at half maximum of the photoelectron intensi
ty observed as a function of distance from the
center of the imaged area. Thus, the effective

sample area is not large. It is often possible to

analyze different positions on the same sam
ple when the surface is heterogeneous on a
scale larger than two millimeters.

6. How to Use This Handbook

Full utilization of this Handbook can best be ac
complished by following these procedures.
A. FOR QUALITATIVE ANALYSIS
The elemental and chemical identification of
sample constituents can be performed most
readily by combining the information in the stan
dard survey spectra in Section II with the
binding energy tables (Tables 1-4) presented in
the Appendix.
(1) First identify all major photoelectron peaks
utilizing the line position tables (Tables 1-4,
pages 182-187).

(5) Identify any remaining small peaks, assuming

they are intense photoelectron or Auger lines
of minor constituents using Tables 3 and 4.

(6)Chemical state identification can be deduced

< 25 eV)
from high energy resolution (E
spectra of the strongest photoelectron lines
and sharpest Auger lines.

i. Review Section I.5.C. (p. 17) to correct

binding energies for static charging of in
sulators. When applicable, charge
reference the binding energy scale to the
hydrocarbon C1s photoelectron peak
(BE = 284.6 eV).

(2) Check to see that the determinations made in

step 1 are consistent with the standard survey
spectra.

ii.Use the tabulated experimental data and

standard high energy resolution spectra to
determine the chemical state from
measured shifts in the photoelectron

(3) Identify the Auger electron peaks by the

line positions listed in Tables 1-4 in the Ap
pendix (these are different for Mg and Al x-ray
sources) and the expanded spectra provided
for many of the elements in Section II.

binding energies (cf section I.5.C., p. 18).

(4) Review section I.5.A. (p. 12) to account for

fine structure such as energy loss lines,
shake-up peaks, satellite lines, etc. not identi
fied in Handbook spectra or energy tables.

iii.For the elements F, Na, Cu, Zn, As, Cd, In,

and Te, convert corrected Auger line posi
tions to kinetic energies by subtracting
from the photon energy (Mg = 1253.6, Al =
1486.6 eV). Note the location of the points
for Auger kinetic energy and photoelectron
binding energy on the respective elemental
plot. Proximity of experimental points to
PERKIN ELMER

27

 > > >

>>>>>>>>>>
those of recorded chemical states should
be considered probable identification, if
consistent with other elemental findings
and with calculated stoichiometry (see
below). Note that experimental error in
point location is much greater along the
Auger parameter grid than normal to the
grid lines.

iv.As suggested in the text (Section I.5.C., p.

20), much can be determined about the
chemical state from the magnitude and
position of shake-up lines as well as the
energy and shape of valence Auger elec
tron lines.

B. FOR QUANTITATIVE ANALYSIS

The atomic sensitivity factors (SJ presented in
Table 5 of the Appendix (p. 188) were calculated
according to theoretical photoelectron cross
sections, the kinetic energy dependence of the
PHI Precision Electron Energy Analyzer and an
average value for the dependence of the elec
tron escape depth on kinetic energy. A
simplified expression to determine the atomic

28

PHYSICAL ELECTRONICS

>

>

concentration (C ) of any element x is given in

equation 8:

l>/s>

2 i/s,

(9)

where lx is the relative peak area of photoelectrons from element x. However, it must be
pointed out that the method is limited in ac
curacy by the assumptions made (cf Section
I.5.D., p. 21).

The spectrum should be examined with a view to

finding information on the depth of the element
(i.e., by peak intensity ratios, or the presence or
absence of loss lines). Further scans with
variable take-off angle, or by erosion of the sur
face, can be made if this point needs further
elucidation.

C. FOR A FINAL CHECK

A concluding effort should be made to ensure
that quantitative data and the conclusions on
chemical state are consistent. This includes
quantitative apportionment of an element
among two or more chemical states, where that
is indicated.

II. STANDARD ESCA SPECTRA OF THE

ELEMENTS AND LINE ENERGY
INFORMATION

PERKIN ELMER

29

))))))))>)
This section of the Handbook contains survey
(broad scan) spectra of sixty-eight elements, detail
spectra of the strongest photoelectron lines, and a
photoelectron binding energy chart or a twodimensional Auger parameter plot for each of the
sixty-eight elements. Used in combination with the
Tables in the Appendix, the survey spectra
facilitate element identification. The detail spectra
and charts aid in the identification of chemical
states.

>>>>>>>>>>
dicated and, where appropriate, the spin doublet
separation is noted. When necessary, checks were
made to ensure that chemical states were un
changed by the radiation. The lines from insulators
have been charge-corrected to the adventitious
hydrocarbon C1s line at 284.6 eV. The instrument
was, in all cases, calibrated to place the Au4f7(2
line at 83.8, Cu3p3/2 line at 74.9, and the Cu2p3(2 line
at 932.4 eV. The instrumental contribution to the
line width for the detail spectra is 0.5 eV (25 volts
pass energy).

SURVEY SPECTRA
The broad scans include all of the lines that are
normally useful. The photoelectron and more pro
minent Auger lines for the element of interest are
identified. Lines that occur due to other elements
are only designated by the elemental symbol, and
x-ray satellites and energy loss lines are not noted.
Many elements exhibit x-ray generated Auger lines
which have sufficient sharpness and structure to
be useful. For these elements, the Auger region is
displayed in expanded form. Exact energies of the
sharper Auger lines are noted. The energies of
those that are less sharp are recorded to the
nearest electron volt. The instrumental contribu
tion to the line width is 1.0 eV (50 volts pass energy)
for the broad scans.

The Y scale has been left undesignated because it

was not possible to control the surface roughness
of the standards. However, the general contours
and relative intensity ratios in the spectra should
be typical of measurements made with the PHI
Precision Electron Energy Analyzer in the retard
mode.
DETAIL SPECTRA

The detail spectra of the strongest photoelectron

lines are presented opposite the survey spectra. In
all cases, the binding energy of the main line is in-

'v

PHOTOELECTRON BINDING ENERGY AND

TWO-DIMENSIONAL AUGER
PARAMETER CHARTS
The photoelectron binding energy charts have
been constructed utilizing data available in the
literature up to 1978. Data from the experimental
work contained in this section have been included
and denoted by the symbol 3). Data fronr) literature
references have not been included if the method of
charge referencing is unknown or of questionable
validity. Data included are all referred to a binding
energy scale with Au4f7(2 = 83.8 and C1s =
284.6eV, although it is recognized at this time that
general agreement has not been reached and that
the values 84.0 and 284.8 could have been chosen
with equal justification. It is likely that the values
ultimately agreed upon will be within these limits.
Line positions have been shown as bars 0.2 eV
wide, although with insulating materials the error
may be somewhat larger. Data available for C, N,
O, P, S, CI, K, Cr, Mn, Fe, Co, Ni, Mo, Rh, Pd, Sn and
Pt were numerous, and selection was made of
those chemical states deemed most useful. Multi
ple data on the same chemical state are frequently
included to indicate reproducibility in different
laboratories. Data that are obviously outlying have
been rejected, but where some doubt existed on
the selection, disagreeing values were included.

30

PHYSICAL ELECTRONICS

<<<<<<<4<<<<<<<<<<<<< <<<<<<<<<
Two-dimensional chemical state plots accompany
the spectra for F, Na, Cu, Zn, As, Ag, Cd, In and Te.
In the format adopted, the kinetic energy of the
Auger line is plotted against the binding energy of
the photoelectron line, with the latter plotted in the
-x direction (kinetic energy is still, implicitly, -fx).
The points on the two-dimensional plot are drawn
as rectangular boxes at 45, reflecting the ex
pected error of measurement in the two perpen
dicular directions.
References for the one and two-dimensional plots
were catalogued by initials of the first three
authors. Where two or more identical symbols for
references would have resulted, a final differen
tiating number was added. The entire reference list
is presented in Section 11-2 (p. 174).Those in the list

that are marked with an asterisk have many

data besides those listed here.

more

Abbreviations used in the tables and plots include

the following:
acac = acetylacetonate
R
= alkyl
ox = surface oxidized in air
Me = methyl
- ethyl
sulf = surface treated with H2S
Et
Pr
= propyl
P- = para
Bu = butyl
aq = hydrate
Am = amyl
tu = thiourea
Ph = phenyl
tm = tetramethylthiourea
Ac = acetyl
cp = cyclopentadiene
Bz = benzyl
bae = ethylenediamine + acetylacetone
(condensation product)
salen = ethylenediamine + 2 salicylaldehyde
(condensation product)

PERKIN-ELMER

31


Lithium, Li

Number

COMPOUND

1s BINDING ENERGY, eV
55

50

Li
Li

LiN3

ip

L|'P< .r%s:bi*ct

LiCr02
Li2CrOa

,JY.

;,F.

f \.

Li Br
LiCI

f"!p V-vottiCjoyo
LiF

s--

;yj

l'

I )

REF.

BCW

."1

1
1

C>3

.1.. '

.ri: <2*
r

KL1
SGR
MVS
MVS
AC1
AC1
MVS
MVS
MVS
O

BINDING ENERGY, eV

32

PHYSICAL ELECTRONICS

HANDBOOK OF X-RAY PHOTOELECTRON

60

___
_

I \

SPECTROSCOPY

)
,

,,< ,

Lithium, Li

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Number

LiF
Mg Ka

N(E)
45

Tl. tin Vt- )I|WV

<
1000

900

800

700

600

500

400

300

200

100

BINDING ENERGY. eV
PERKIN-ELMER

33

>> > >>>> >>

Beryllium, Be

COMPOUND

1s BINDING ENERGY, eV
110

Be
Be
Be

nw

Bep/f- c

BeO

Na2BeF4
NaBeF,

BeF2
BeF,

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Atomic
Number

115

REF.
120

O
HJG
B1
NGD
HJG
NKB
NKB

NKB
HJG

112
BINDING ENERGY, eV

11

34

PHYSICAL ELECTRONICS

\
>PY

<<<(<

* * *

I I 1
I I \
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Beryllium, Be

Atomic A
Number Hr

Mg Ka

Be 1s

102

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100

PERKIN-ELMER

35

Boron, ti >
/viomic

Number

))))))))
t ) )
HANUoOOK
X-RAr PHOIUELEClrlON SPECTROSCOPY
ut-

COMPOUND

1s BINDING ENERGY, eV
185

190

REF.
195

B4C

MnB2
TiB2
CoB

'

.->

'

VB2
HfB2
MoB2
Fe2B

'

AIB2

NaBH4
B

Me4NB3H8
NaBPh4
b10h,4
B10H,2Pt(PPh3)2

B10H12Pt(PEt3)2
BN

190

bn
BN

BINDING ENERGY, eV

p-CIC6H4B(OH)2
NaBH(OMe)3

_
JB
.
Ph3POBBr3toig
.

Na2B4O7-10H2O.|:'::iQ;;-r
.
B(OH)3

B203
Ph3POBCI3

EtNH,BF

NH3BF3
NaBF4

36

PHYSICAL ELECTRONICS

>|
1

I II

)PY

< < <

< <

' ' ' '

<

<<<<<<<<<

Boron, B a5

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Mg Ka

B(KVV)

L
1100

1000

900

800

700

500
600
BINDING ENERGY, eV

400

300

200

100

PERKIN-ELMER

37

)>>)>>

Carbon, C

Number

280

1s BINDING ENERGY, eV
284
288
292

HAL

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

COMPOUND

HfC
TiC
WC
C (graphite) :
(CH2)n
Mn(C5H5)2

>>>>

REF.

Polyethylene

296

284.6
T"

SnPh4
MeCH2NH2
Cr(C6H5)2

MeCH2CI
MeCH2OH
MeCH2OEt
MeCH2OOCMe
CS2

N(E)
E

Fe(CO)5

Me2CO

:(NH2)2CO

< *.

294

;C6F6
MeCOONa
MeCOOEt
MeCOOH _
'N a2C02

284
BINDING ENERGY. eV

274

NaHCOj

:CO

C02
(CHFCH2)n
(CHFCHF)n
[(CHFCF2)n
:(CF2CH2)

'

*.**

'

l(CF2CHF)n;v
(CF2)n
CFjCOONa

CCI4

:CF2COMe

;CF3COOEt .

'i

<X>

1100
i

38

PHYSICAL ELECTRONICS

,,, ,

. ......

,.<<<<

HANDBOOK OP X-RAY PHOTOELECTRON SPECTROSCOPY

I<I<<<<<<<
Carbon, C ess 6
Polyethylene

C(KLL)

Mg Ka

KVV
997

990

C 1s

1020

N(E)

980

1000

C(KLL)

1100

1000

900

800

700

600

500

400

300

200

100

BINDING ENERGY, eV
PERKIN-ELMER

39

Wrogeii, N* *Js7 >

COMPOUND
394

1s BINDING ENERGY, eV
406
393
402

ANCuloK uX-RAi PHOTocLEC ..N SPcTROaOPY

PHOT

REF.
410

BuNHj

PhNH2
pyridine

H2NCsH4N02

h2nso2c6n4no2"~

tetracyanoqui nodimethane
PhCN

PhNHCSNHPh
guanidine HCI

phthalocyanine
PhNNPh

h3n+chrcooEtNHjCI

Me4NBr
Me4NCI
P-NHjC8H4SOjchloranil-pyridine

'

398
BINDING ENERGY, eV

Me3NO
AmONO

MeN02
PhN02
WN

bn
NaSCN
K4Fe(CN)6
KCN

S2N2

co(nh3)6ci;.-;

n2h5so4
(nh3oh)+ci->
nh4no,

Na2N202
NaN3
NaN02
NaN03

'

$
40

PHYSICAL ELECTRONICS

Nitrogen, N

HANDUOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Atomic
Number

BN

N(KVV)

873.4

903

Mg Ka

890.6

N 1s

N(E)

840

880

920

1100

1000

900

800

700

500
600
BINDING ENERGY. eV

400

300

200

100
perkin-elmer

41

)))>))

Oxygen, O

Number

COMPOUND
525

>

>)

I t

1s BINDING ENERGY, eV
530

H/

KBA
KBA
KI1
KBA

;:\>-s

wo3
Cr203
Cu20
Ni202

CR
AC1

KOH

RBO
KBA
KBA
KI1

ai2o3

CD

Na zeolite
Si02 gel

MWJ

Ni(OH)2

AI(OH),

CaC02
Na2S203
Na2S03 -T '
Na2S04

\f: :

'

CsCI04

HANDBOOK OF X-RAY PHOTOtLECTRUN SPECTROSCOPY

REF.

Ru02
'

>>>>>>>)>>>

535

NiO

Fe203
Ruo2

>

"

Li2Cr04
CuCr02

AI2(Mo04/3
AI2(W04)3
Cr(CO)6
R,SO

* ."j&- ?;<S,

RjS02

H2NC8

h2nc,h4so2nh2

RS03Na

poly (methyl methacrylate)

Et2o
PhOCOOPh
. 1

l1I

r*

J fp*&,

MWJ
FWF
S4
LHJ
LHJ
LHJ
MVS
AC1
AC1
AC1
PCL
PCL
PCL
NH2
PFD
ML
ML
HS
LHJ
LHJ
CT
CT
CT

542

532
BINDING ENERGY, eV

lJ

<x>
100C

42

PHYSICAL ELECTRONICS

I<<<<<<<<<<<<<<
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

<<<<<<<<<<<<<<<
Oxygen, O

Atomic

Number

Q
O

ai2o3

O 1S

Mg Ka
i

-r

O(KVV)

745.3

766.7

780.6

N(E)
522

765

805

725

Al

<D
1000

900

Ar

Ar
I

Al

"nJ W_/U
0 2s

vi

800

700

600

_L
500

400

_L
300

200

100

BINDING ENERGY, eV
PERKIN-ELMER

43

> >
Fluorine, F

Number

>

I t

> > >

> >

>

>)

> >

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

1344
1343

660

LU

684.9

LU

659

1342

658

1341 3

657

1340 2

656

1339

uj

N(E)

LU

655
CoSIF,

695

685

675

BINDING ENERGY, eV

654

653

652

651

650

Data presented in tabular lorm in Section II. 2.

*C4F

and CF are fluorinated graphite

samples.

**MPT is C;7H3aN7, a llgand with three

methyl-pyridine rings.

690

689

688

<x>
44

PHYSICAL ELECTRONICS

687
686
685
1s BINDING ENERGY, eV

684

683

10C

,,,
PY

<

I i

<

Fluorine, F

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

F(KLL)

Number

KLLjj

598.7

Mg Ka

624.8
643.8

675

F(KLL)

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

45

>>>">>>>
H "1
Sodium, Na
II

>>>>>>>>)
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Atomic
Number

2067

997

1 1s
1071.4

2066

2065

Na2HP04

2064 cc

lu

N(E)
E

2060 S?

992

1082

1072
BINDING ENERGY, eV

1062

NaAsO

NajHPOi |

NajS20
NaOAc

NajCOj
NaPO

I
Na2SO
NaNO

/Na Zeolite

NajZrFs
Na,AlF

Data presented in tabular form

1075

1074

1073

<E
46

PHYSICAL ELECTRONICS

1072
1071
1070
1s BINDING ENERGY, eV

in

Section II. 2

1069

1068

Pl

I i
|

| (

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Sodium, Na

Number

11

Na2HP04

Na(KLL)

Mg Ka

KLjjLjj
263.5

Na 1s
302.5

KL.L,
331.0
N(E)
1062

250

300

350

x4
<<:% aftggagaafc

Na2s

ifeli

"N
_L

1100

1000

900

800

700

500
BINDING ENERGY, eV
600

400

300

200

100
PERKIN-EL.MEFI

47

)))>>)>)>)>)

Magnesium, Mg : 12
50

45

Mg
Mg
Mg
Mg

Mg3Au

MfllCu_
Mg3Bi
Mg ox
MgF2

LMK

I I

>

>

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Mg

55
(D

""

>

REF.

2p BINDING ENERGY, eV

COMPOUND

49.75

HF1
FWF
FWF
FWF
FWF

FWF
CD

BINDING ENERGY, eV

I
F

1
t

\I

<X>

i
48

PHYSICAL ELECTRONICS

(<<((<<((<

<<<<<<<<<<<

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

<

<<<<<<<<
Magnesium, Mg

Atomic "J O

Number

T
KL23L23

Mg(KLL)

300.9

Al Ka

346.5
KLiL,

Mg1s

380.2

N(E)
40

390

290

340

-r-

Mg(KLL)
Mg2s

xlO

vl

<D

..5T>

_L

1400

1300

Mg2p

1200

1100

1000

900

I
600
700
800
BINDING ENERGY, eV

500

400

,v .V

300

200

100

perkin-elmer

49

>!> i

Aluminum, Al

Number

13

COMPOUND
Al
Al
Al
ai

aib2

I
1

iA

Al ox

AIA

7-AL0-

7-AI203
Na zeolite
Zri Al204

_.

1
,

SAi.0.7fsgflagS7

soAi=o-:,s3a3fSSsass
NiAI204

AI2(W04)3
AI2(Mo04)3
Al acac3

llf3
<A
I Br3
AICI,

l'

t-ai2o3

aif3
k3aif6

w.

:*

LMK
MEC

...

B2

:;

1
1

'

1
1

!' *-

L-'

fy

i i i i i i

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

MSC
B2

ai2o3
ai2o2
ai2o3

I i i i

80

75

REF.

2p BINDING ENERGY, eV
70

'

?' -

NSL
MSC
NGD
OW
MWJ
NH2
MWJ
OW
BGD
PCL
NH2
NH2
PCL
MSC
MSC
MSC
MSC
MSC
MSC
MSC

76
BINDING ENERGY, eV

76
BINDING ENERGY, eV

50

PHYSICAL ELECTRONICS

i
|

i
HAr

DP Y

<

HmNDBOuK of x-ray

<

photoelectron spectroscopy

<

<

<

<

'

((((((<<

Aluminum, Al

Atomic
Number

"f Q

IO

Mg Ka

Al 2s

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

51

Silicon, bi

14

COMPOUND

2p BINDING ENERGY, eV
98

103

HANuJOK JX-Rh AhOiOLEC.ON ScCTRoAoPY

REF.
108

99.15

Si
Si
Si
Si

JV

Ph4Si

MV

NBA
GCH

Me3SiNHSiMe3
Me3SiOSiMe3
PhjSi(OH)2

I
-i-. ll:..

Ph3SiOH
Ph3SiOSiPh3_
Et3SiCI
(Me2SiO)5

(Me2SiO)n

Et3Si F
Et2SiCI2
EtSiCI3
sit,

"V1

Na zeolite Ju
silicates

is2

CDB
MV
HBB

'

Ph4Si
Ph4Si
Ph3SiSiPh3
Ph3Si Si Ph3
Me3SiSiMe3

,p,

'

NBA
GCH
GCH
GCH
GCH
NBA
NBA
GCH
GCH
GCH
NBA
GCH
GCH
GCH
NBA
MWJ
CDB
MV

Si02

(D

SiO,

NSL
MV
CDB
MWJ
NSL
MV

Si02
SiOj

Si02 gel
Na2SiF6
K2SiF6

114

103.4

104

BINDING ENERGY, eV
PHYSICAL ELECTRONICS

94

104
BINDING ENERGY, eV

114

52

SiO

94

,%

<

<

<

<

<

HANOBOOK OF X-RAY PHOTOEIECTRON SPECTROSCOPY

' ' *

' '

Silicon, Si

Atomic "1 /I

Number

IHT

Mg Ka

94

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200
PEBKIN-ELMER

53

)))

))))))))

Phosphorus, P as 15
COMPOUND

2p BINDING ENERGY, eV
128

CrP
MnP
GaP
BP
P

'

133

I
l

"

Ph3P
Pt(PPh3)4
PtCI2(PPh3)2
PdCI2(PPh3)2
PdBr2(PPh3)2
_
PdI2(PPh3)2
pto2(pph3)2PtCI4(PMePh2)2

v::

Ph3PS
BUjPCI

Ph4PBr
Ph3PO
(Phs)3ps
(PhS)3P
p3n5
Ph2PO(OH)

BaHP03 :>
K2HP04
Na2HPo4

C-

kh2po4

POBr3
JNa,P04
Na4P207

(NaP03)j .
NaP03 . .v
(PhO)3PO

>

P205
NH4PF9
KPFa
PBr5

<D
54

PHYSICAL ELECTRONICS

..

.
"

-T

>

>>>>>>)

>>>> >

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

REF.

Na2HPO

138

PHH
PHH
(D

PHH
PHH
PHH
R
R
KBM
KBM
KBM
R
LB
PHH
PHH
SRH
PHH
MSA
PHH
PHH

132.9

144

134

124

BINDING ENERGY, eV

NBK
PHH
PHH
CD

PHH
PHH
MVS
MVS
PHH
PHH
PHH
NGD
PHH
SMA
PHH

11I

thandbook
I of<(<<<<
x-ray photoelectron spectroscopy

(<!<<<<

'

Phosphorus, P

Atomic C
Number |O

Na2HP04
Mg Ka

Na

N(E)

Na

- Na

1100

1000

900

800

700

500
600
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

55

>>>>>>>>>>>>>
Sulfur, S

Number

16

COMPOUND

2p BINDING ENERGY, eV
160

165

Na2S

B4
B4

Na2SS03
PhNHCSNHPh

PhSCMe3
Ph3PS

tetrahydrothiophene
PhSH

Ph2S
PhSSPh

\--rT
.

'

thiophene

"

s2n2
Me3SI

IV

02NC6H.S02Na
Ph2S O ~
BzMeSO .

PhS02Na
Na2S03

Na2SS03
BzMeS02
V
S02
PhS03Na

p-H2NCBH4s62NH2i
.'
PhS03Me

Na7S04
FeSO.,

Fe2(S04)3

56

REF.

LHJ
LHJ
SFS

KFeS2
WS2
MoS2

Sn

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

170

p-NaSCjHjNOj
PbS
FeS

s3

>>>>>>>>>>>>>

PHYSICAL ELECTRONICS

v.

NH2
PCL
LHJ
PNS
PLB
MSA
MMP
LHJ
LHJ
LHJ
LHJ
0>
LHJ
SDI
LHJ
LHJ
LHJ
ML
LHJ
LHJ
LHJ
ML
LHJ
W1
LHJ
LHJ
LHJ

LHJ
LHJ

163
BINDING ENERGY, eV

,1

(<<<<<

I I t

Sulfur, S

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Alomic

Number

16

Mg Ka

1000

900

800

700

600

500

400

300

200

In*

100

BINDING ENERGY, eV
pehkin-elmer

57

'cLlorine, CI'

'h

)))>)))

Atomic
Number

COMPOUND

195

2p BINDING ENERGY, eV
203
199
207

I I I I I HAN-loOK X-I,PHC.,JeLE.ON ..CThlcOP .

REF.

Poly (Vinyl Chloride)

211

CsCI
RbCl
KCI
NaCI
LiCI
guanidine HCI
AgCI
CuCI
N iCI2
HgCI2

ZnCI2
CdCI2

199.9

FeCI,

FeCI,

CuCI2
K2MoCI6

'

K,SnCI6

K2ReCI6

210
.

200
BINDING ENERGY, eV

190

KjPtClj

K2PtCI
Pt(PPh3)2CI2

pt(PEt3)2ci4

po(NH3)6CI3||N
fogfr
poly (vinyl"chloride)

chioranil

tetrachlorohydroquinone
ch lorani l-pyridine

Tp-cic6h4)P|
-PhCI

o-C,H4Ci
PhCCI3
KCI03

rcsci

,,

<X>
1

58

PHYSICAL ELECTRONICS

< It

<

<

<

<

<

HANDBOOK OF X-RAY PHOTOEIECTRON SPECTROSCOPY

<

Chlorine, CI

Number

17

Poly (Vinyl Chloride)

CI(LMM)

Al Ka
1-232323
1304

N(E)
190

1310

1300

1280

1290

CI(LMM)

CI 2p

x4
CI 2s

O
J

v.

1400

1300

1200

1100

1000

900

600
700
800
BINDING ENERGY, eV

500

400

300

200

100

perKIN-elmer

59

>>>>>>>>>>>>>> >>>>
Argon, Ar

Atomic
Number

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

"4 O

COMPOUND

2p% BINDING ENERGY, eV

235

Ar ( n C)
Ar ( n C)
Ar ( n Fe)
Ar ( n'Cu)Ar ( n Ag)
Ar ( n Ag)
Ar ( n Pt)
Ar ( n Au)
Ar ( n Au)

IO

240

REF.

Ar in C

245

'

2.2

252

242
BINDING ENERGY. eV

232

<X>
60

PHYSICAL ELECTRONICS

11C

<<<<<I<<<<<<<< <<<<<<

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Atomic H Q
Argon, Ar Number
IO
||

Ar in C

Mg Ka _

N(E)
232

Iv

Ar(L23M2:iM23)

V\f[
'

Ar 2S

<1
1
1100

1000

1
1
900

800

700

1
1
600
500
BINDING ENERGY, eV

400

300

Ar 2p

--100
200
A

PERKIN-ELMER

61

>>>>
Potassium, K

Number

COMPOUND

2p3/j

BINDING ENERGY, eV

KF
KN,

295

> >>

> >

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

19

290

KBr
KBr
KCI
KCI

REF.
300

2p%

KBr

292.9

V?

KN02
kno2
K2Pt(CN)2

K2PtCI4 ''H""'-''
K2PtCI0
K2PtCI6
K2ReCI6
K2IrCI6
K2SnCI6
k2moci
K2TiF6
'

V;--V:

304

294
BINDING ENERGY, eV

284

(D

I
i

62

PHYSICAL ELECTRONICS

(
>Y

<

I t
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

(<<(<<(

'

Potassium, K

K(LMM)

Atomic H Q
Number |ij

KBr

L23M23M23
1005.1 1002.7

Mg Ka

K(LMM)

1050

970

1010

N(E)

234

K 2P3/2

*1

K2p,

Br

Br

K 2s

V.

0
1100

1000

900

800

700

500
600
BINDING ENERGY. eV

400

300

200

K3p

100
PERKIN-ELMER

0
63

> >>>>>>>>>>
20
Calcium, Ca
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Number

COMPOUND

2p3/j BINDING ENERGY, eV

345

350

CaO

CaC03
CaS04

Cap/
CaF2

'

'-I

1
-

REF.
355

o
(D

1
.

i
i

W1
W1
NSL

346.8

N(E)
359

349
BINDING ENERGY, eV

<X>
64

PHYSICAL ELECTRONICS

339

'Y

< < < < <

I

<

< < < < < < < < < < < < <

<

HANDBOOK OF X-HAY PHOTOELECTRON SPECTROSCOPY

<

' ' CB ' '20

4

CSlCjlim

Ca(LMM)

N(E)
Ca(LMM)

950

960

970

980

940

Ca3p

Ca 2s
i

Ca3s

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PEBKIN-ELMER

65

>>>>
Scandium, Sc

Number

COMPOUND

21

2p]/a BINDING ENERGY, eV

395

fSMfM-rV
-V.

ScjOa

Sc203
Sc203
ScCI3
ScF3

I >>>>>)>
HANDBOOK
OF X-RAY

PHOTOELECTRON SPECTROSCOPY

REF.
405

400

Sc
OjHjSCOgHg
(C5H5)2ScCI

WM
WM
WM
STA

401.7

CD
NGD

WM
W1
W1

415

405
BINDING ENERGY. eV

395

10

66

PHYSICAL ELECTRONICS

I 4
PY

[4
I

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Scandium, Sc

Atomic O -4
Number |

T
i

-r

Sc203

Sc(LMM) L23M23M23
918.5

Mg Ka

L23M23V
890.9

Sc(LMM)
N(E)

395

840

890

940

Sc 2p3/2

Sc 2 p

Sc 3p

x4
Sc 3s

<E
1000

900

X
800

700

600

500
BINDING ENERGY, eV

400

300

>iT>i ml \

200

,i I,

100
PERKIN-ELMER

67

>>>>>>>>>>>>>> > >>

Titanium, Ti

Number

COMPOUND

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

22

REF.

2p% BINDING ENERGY, eV

453

458

463

Ti
Ti
Ti
Ti

Ti'H,
TiB2
TiB2
TiS
TiC
TiC
TiN
TiN
TiO

\
6.15

C5H5TiC7H7
(CsHs),TiCI
'BaTiOj . .
PbTiO,

jSrTi03

,.

'

.;
Vv-*-,

'

..>

f-Vi,;...'

470

CaTi03
TiOz
Ti02

|Ti02

450

460
BINDING ENERGY, eV

TiO

TiCU

Na2TiF6

5.7

(D
470

68

PHYSICAL ELECTRONICS

460
BINDING ENERGY, eV

450

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Ti(LMM)

Titanium, Ti

Atomic
Number

870.1
864.5

Mg Ka
Ti(LMM)

920

870

Ti 2p

820

770

N(E)

Ti 2s
Ti 3p

Ti 3s
i

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

69

>>>>
Vanadium, V

Number

COMPOUND

V
V
V
V

515

> >>>
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

23
2p% BINDING ENERGY, eV

510

REF.
520

511.95

V
V
V

V
V

vb2

vc
vs

VN
VN
(C5h5)2v

Ic5h5)2v

"

(C5H5)2VCI

V. acac,

525

505

515
BINDING ENERGY, eV

VO acacj
VOSO,

VOCI2
VO

v205
V205
v205

2p3/2
517.45

O 1s
x-ray

satellite

533

523
BINDING ENERGY, eV

70

PHYSICAL ELECTRONICS

513

|
I

Vanadium, V

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

2Py2

Number

23

Mg Ka

V(LMM)

---r '
V(LMM)
1

'

'

-r

L3M23M23
815.2

l3m23v
781.4
V

2py}
L3W
743.4

-11

L.

. . .
1

820

870

_i

720

770
V 3p

500
BINDING ENERGY, eV

400

300

200

100
PERKlN-ELMER

71

ILU

"J

CD

I < CD Q Q IE
oXI
o
O
-r- T O O O T
T T
WQQQChOLLLLWHWh
hhl-W(/)(/)hl-hhOOOOh(/)

O
LU
DC

eOOOOQCcoCQa-CLONNOJC <<<000<<<<<<<<<0

>
O

rt
'

'

i '

DC

>

!
i

LU

'

UJ

_
_

Ml

2
CD

\j

CNJ

mmm

; i:

V
V

'

r>

r>- '
in

'

L..

'

<n

X
.

"x

ZO
m

to

vi

Ms*

[: v
h-v-

Bm-i

io

>

in

m,c/iy.oo z

!:-

!. "i

'

to

" 9

to

___

'

$!

b'

.?

'

ki

in

k_

n *

s
>

"

*>

(N

piUL.ui_jyiU

r>.
M

of-

u_

v_

000000000000,0*:* ,o. o op oj.z;.o,OjO

T
r> -1-

l_

oo

Q)

'nk_

CO

r*

cj

* o o;m * *

u-

<
o
I

*
,o

-!
d"
R-=5,03 ";
-7 -roH
,lO
- n'
IB U O S. o 30,0 0
LL

I;'-:#

iO'v

'*
oooraOO
n 0n"0
M
W
V. ) v
"
f
o o o' o 6 o O o o c>o o
ui

XXX
k

!#sK!

/,*
(_)

Q
Z
D

a
5

'

&
L %vj

!:' ' "-.i

Q-

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Chromium, Cr

Atomic
Number

'i

;(
1
i

I
<

Mg Ka
Cr(LMM)
Cr(LMM)

N(E)

820

770

720

670

Cr3p

Cr3s

J
i

Ar

1000

900

800

700

600

500

400

300

200

100

BINDING ENERGY, eV
perkin-elmer

73

> =25
> > > > *Mn
I tr
Manganese,
COMPOUND

> >

ANul>OK olx-RA, IhOiIlEC..I)N

645

640

S,

AtRO-IoPY

REF.

2p% BINDING ENERGY, eV

635

>

2p3/2

Mn
Mn(C5H5)j
Mn(C5H5)(CO)3
MnS
--x
MnS
a-MnS
r
|3-MnS
Mn2(CO),0
BrMn(CO)5
[BrMn(CO)4]2
BrMn(CO)4(PPh3)3

Mn

638.8

:
1

'

Mn2(CO)8(PPh2)2

Mnl2

11.25

K3Mn(CN)s

MnBr2
MnBr2
MnCI2

MnCi2
MnO
MnO
MnO
MnO

i
N(E)
660

655

""

650
645
BINDING ENERGY, eV

2p3/2

7-MnOOH .

635

640

MnO

642.2

Mri203

Mn203

Mn303
Mn02

Mri02

Mn02
Mn02

KMn04
MnF2
MnF2
MnF3

660

74

PHYSICAL ELECTRONICS

655

650
645
BINDING ENERGY, eV

640

635

10'

I I t

<

<

<

<

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

<

<

*
Manganese, Mn

Number

Mn(LMM)

25

Mg Ka
-1-1-r

-i

Mn(LMM)

(2P3/2)
Mn 2s

Mn 2py2

L3M23M23

LjMjjV

710.4

'

667-

(2p ,/2)

N(E)

335

L3VV
618.0
Mn 3p

___

-I

700

750

lilt

L.

600

650

x4
Mn 3s

O
C
1

ii

Ar

iii

35

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100

PERKIN-ELMER

75

>>> >> >>

Iron, Fe

Number

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

26

COMPOUND

2p% BINDING ENERGY, eV

705

710

REF.
715

Fe

Fe28
FeB

FeS2

Fe(C5H5)j

.
'

Fe(C5H5)2I3
Zn2Fe(CN)6
K4Fe(CN)6
KFe(CN)6
Na3Fe(CN)5N2 :

Na2Fe(CN)sNO
K3Fe(CN),
:

13.2

Fe2P2S6

KFeS2
FeS
Fe(CO)5

Fe(CO)2(NO)2 vi w
Fe(C5H5)(CO)3BPh4
FeO
FeO
'

Fe203
Fe203
..Fe203
FeOOH
FeOOH

740

730

700

710

720

BINDING ENERGY, eV

Fe20
'

"

2p%

Fs304
NaFe02
Ni

710.7

;FeBr2 ta. 7.;

FeBr3
FeCI2
FeCI3
FeF2
FeF3".,iW"'
K3FeF6 :v:

I1
13.6

<D
76

PHYSICAL ELECTRONICS

740

730

720
BINDING ENERGY, eV

710

700

py

< <

I \

i 1

< <

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

* *

<

' *

* *

If!")

Atomic

'26

Fe(LMM)

Mg Ka

601.

N(E)

Fe 2s

655

705

555

605

505

Fe3p

Fe3s

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

77

>>)>)>>)

Cobalt, Co

Number

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

27

COMPOUND

2p3/2 BINDING ENERGY, eV

775

>>*

780

REF.

Zp3/2

785

777.9

Co

Co

Co2B
CoB
Co(C5H5)j
Co(salen) " '
Co(bae)
Co(CO)3NO
'

C03O4
Co304
CoO
CoO
CoO

15.05

Co(OH)j
CoOOH

Co203
CoFe204
CoCr204

V-

810

CoMn204
ZnCo204

800

790
BINDING ENERGY, eV

CoAI204
CoAI204
coai2o4

Cs2CoCI4
CoMo04
Co(NH3)3CI3"

Co(NH3)6CI3
Co(NH3)8CI3

KCo(CN),r
HCol2 (dimethylg Iy oxime)

HCoBrj (dimet hy Ig 1y oxime)

HCoCI2 (dimeVhyfglyoxime)
K3Co(N02)6

_
CoF2
cof3;
Co F2 4 H20 >

<D
78

PHYSICAL ELECTRONICS

2p3/2

"

770

780

CoO

780.0

V
I

ll

15.5

810

800

790
BINDING ENERGY, eV

780

770

<<I<<4<II<<<<<<

Cobalt, Co

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Number

27

----1---r

-|

Co(LMM)

605
. 597.7

MgKa
L3M23V
543

L3VV
480.2

Co2p3

N(E)
770

Co2p,/2

640

'

'

590

!_

___

L.

490

540

L.

440

Co3p

770

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
rerkin-elmer

79

> > > > >

Nickel, Ni

>

Atomic
Number

>

28

COMPOUND

2p% BINDING ENERGY, eV

851

REF.
8611

856

Ni

Nil,

MYG
BCD
TRL
NH2
NH2
BC1
MYG
MYG
STH
MYG
MYG
TRL
MYG
MYG
MYG
TRL
MYG
MRC
KD
MYG
MRC
KBA

Ni(CsH5)2
Ni(PPh3)2 ~

.5

NiS

'

Ni2S3
Ni(CO)4

NiBr2

Ni (dimethylglyoxime)
NiCI2(NBu3)2
NiCI2(PBu2)2
NiCI2(PPh3)2
Ni acac2

Me4NNiCI3
Ni(CN)2
K2Ni(CN)4

ZnNi(CN)4
NiCOj

'

NiO
NiO
NiO
Ni(OH)2
Ni(OH)2

\
vr*f : ,

Ni2o3
Ni203
Ni203
NiCl2

v--

I'V.-.

NiFe204'

Ni(N03)2

NiS04
NiAI204

'

NiW04
NiF2
(NH4)2NiF4

K2NiF6

ff

<
80

PHYSICAL ELECTRONICS

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

2P%
852.3

17.4

888

878

848

868
BINDING ENERGY, eV

NiO

KBA
NH2
KD
TRL
MC
TRL
MYG
NH2
NH2
MYG
MYG

y TRL

888

878

868
BINDING ENERGY. eV

858

848

<

i I
PY

<<<<<<<<<<<

((((<(<<<(

Nickel, Ni

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Number

28

---r
1

Ni(LMM)

l3vv
407.2

MgKa

478.9

472.6

L2VV
390.0
848

Ni(LMM)

44

348

1100

1000

900

800

700

'

500
600
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMEH

81

 > >>>>
Copper, Cu
923

i i

Number

r~r-

>>>))>>>>>>>
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

29

T'l 1 ' 1 "

I'll

"

' \ T \

2p3/2

till

932.4

Qu

922

921

920

/ /i
/ &/ /I
/$\ y'
/
Y/ /

919

>

CO

a:

ILI

>

917

>
>

/I

CuS04 5HjO

916

914

913

// Y
\/////
/<

Data presented In tabular

/\
936

<D

2p3/,

955
945
BINDING ENERGY, eV

CuO

(arm in

section II. 2.

* PTisC,4H2rNs ligand with threa pyridine

rings.

933
935
934
BINDING ENERGY, eV

>i<i

iiii

932

20.0

931

975

965

955

945

BINDING ENERGY, eV

82

PHYSICAL ELECTRONICS

925

935

/W

937

.965

A
y \
Cu(PTH
r

938

975

y
915

19.8

XV/\

918

o
v

/e

935

925

i I,

<

.......

<<<<<<<<<
'

'

HANOBOOK OF X-HAY PHOTOELECTRON SPECTROSCOPY

>P Y

' Copper,
' ' ' Cu' *as*29

Cu(LMM)

Mg Ka
!

I
I

486

479

406.8
t

N(E)

Cu 2pi/j

S25

350

400

450

500

300

Cu(LMM)

...
Cu 3p

Cu 3s

925

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
perKIN-elmer

83

>>

Zinc, Zn

>>!
Number

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

30

2014

995

2P3/2

Zn

1021.45

>

2013 (J
cc

994

LU

UJ

2012 O
I-

993

CL

<S)

2011

992

cc

UJ

UJ

2010

991

>

<
cc

cc

Q.

CC
UJ

<

(5

ui

<

H
LU

23.1

2009 o

990

1065

1055

1035
1045
BINDING ENERGY, eV

1015

1025

2008

989

5m
T

5CO

'Zn(PTKBFJ,'

988

2p3/2

ZnO

1021.7 A
987

986

985
Data presented In tabular form In Section II. 2.
*PT la C24Hj;N7, a llgand with three pyridinu
rings.

1026

1025

1024

G>
84

PHYSICAL ELECTRONICS

2p3/

1022
1023
1021
BINDING ENERGY, eV

1020

1019
23.0

1065

1055

1045

1035
BINDING ENERGY. eV

1025

1015

<

ii

<

<

* *

* *

<

< <

<

<

--

--r

-i

-i

Zn(LMM)

30

r-

Mg Ka

L3M45M45

L3M23M45

L3M23M
23 v,23

Zn2p ,/2

Number

---

-1

261.2

Zinc, Zn

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Zn 2 pa,

348.4

427

340.0

L0M23M45

L2Mj5M45

325.5

238.2

N(E)
1015

460

'

__

'

_ -_

l_

410

_ --

L.

360

___

260

310

L.

210

Zn 3p
Zn 3d
Zn 3s

si

YrOiV '-jj
'

[015

1100

1000

900

800

700

500
600
BINDING ENERGY, eV

400

300

200

100
pebKIN-elmer

85


Gallium, Ga

Number

31

COMPOUND

'

GaAS>
Ga?
GaSb

25

20

Ga
Ga
Ga
'

'

'

...

....

Ga203
3p%
100

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

REF.

3d BINDING ENERGY, eV
15

>

..j

BINDING ENERGY, eV
105

S1
LBH
LBH

LBH
LBH
LBH

110

Ga

Ga203

Ga20?
Ga203

Gal3
GaBr3
GaF3

<E
86

PHYSICAL ELECTRONICS

/*v

BINDING ENERGY. eV

12

Gallium, Ga

iuOK Oh X-RAY PHOTOELECTRON SPECTROSCOPY

Atomic
Number

Al Ka
L3M23M4;
516.8

A 503.5

391.8

N(E)

670

570

620

370

420

470

520

Ga(LMM)

Ga 3p
.v-v

/=

1200

1100

1000

900

800

700

v'

.V\--;
f

''

- *M>V**'

500
600
BINDING ENERGY, eV

Ga 3d
Ga 3s

vife

400

300

200

100

PERKIN-ELMER

87

) \
)
)
\
>
> Germanium,
Ge

Number

COMPOUND

32

3d BINDING ENERGY, eV
25

30

>

HANUBOOK OF X-RAY PHOTOELEC TRON SPECTROSCOPY

REF.
35

Ge
Ge
Ge
GeTe,
GeTe

28.95

GeTe2
GeAs2
GeSe
GeS
GeS
GeSj

Ph4Ge
PhjGel

Ph3GeBr
Ph3GeCI
Ge02

___

_l

44

2p%
1215

Ge
Ge

Gel2
Ph4 G e

..

Na2Ge03
GeO

Ge02

K2GeF6

PHYSICAL ELECTRONICS

7'l 1

KV

___

L.

-I

34

BINDING ENERGY, eV
1225

0
MV
MV

' t

88

BINDING ENERGY, eV
1220

MV
MV
MV
MV
MV
MV
MV
MV

l_

24

i !' <<<<

,,,

'

Germanium, Ge cs32

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

111
1
-ri-1-1-1-1 1-1-[-1

'

Ge(LMM)

"

!1

L3M45M45
341.2

Al Ka

L3M23M45

L3M23M23

443.5

533 524

L2M4sM45

\433.0 L3M23M45

310.0

Ge 2p3/

Ge 2pi/2

N(E)

550

___

_]

L-

__

-1

1
1300

1200

1100

1000

900

800

700

600

1_

300

350

400

450

500

___

L_

500

1
400

300

200

100

BINDING ENERGY, eV
PHRKIN-ELMER

89

>>>>>
Arsenic, as
33

HmiDBOuJoF X-riY PhOOELtTRON fpECiHSCUP

Number

1227

i | i

i~[

iiii i

[i i

| i i i r

1267

1266

1265

1264

1263

1262

-j 222

BINDING ENERGY, eV

UAsOOH
Me-iAsOOH

Na-HAsO

Data presented in tabular form in Section II. 2

45

CD
90

PHYSICAL ELECTRONICS

43
42
44
3d BINDING ENERGY, eV

<<<<<<<<<

'

<<<<<<

< <

< <

v nu nunmci CATnnn cncrrnn

HANDBOOK OF X-RAY
PHOTOELECTRON SPECTROSCOPY

UAwnonni/

rc

< < <

'
'
'
Arsenic, As

Atomic OO
Number

GaAs

As(LMM)

L3M45MJ5

Al Ka

261.0

L3M23MJ5
370.8

L2M45M45
225.4
334.5

N(E)

As 2py2

30

As 2p3

335

385

'

__

-1

L.

285

L.

_ I_ I_ L.

235

185

Ga

As 3p

1400

1300

1200

1100

1000

900

600
700
800
BINDING ENERGY, eV

500

400

300

200

As 3d

100

perKIN-elmer

0
91

>>>>>>
Selenium, Se

Number

COMPOUND

34
62

57

PbSe
PbSe
SnSe
SnSe

Bi2Se3
NbSe2
Nb3Se4
GeSe

As2Se3
Se
Se
Se
Se

Se

C,6H33SeSeC,sH33

BrC8H4SeC6H4Br

R 0C2 H4 SSeS C2 hi40 H.

Na2SeS4O0 ; V

~(PhCH2)2SeO

(BrC8H4)2SeO
[HOOC(CH2)4]2SeO

.C16H33SeO(OH):r.:,
phSeO(OH)

M'

Ph2SeCI2
Na2Se03
Na2Se03
CIC6H4SeO(OH)

"H2Se03
f
1

[Se2

- /. /

Se02
CIC6H4Sed2(OH)
Na2Se04
Na2Se04

92

PHYSICAL ELECTRONICS

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

REF.

3d BINDING ENERGY, eV
52

>>))>>)))

SFS
WSP
SFS
WSP
DR
B3
B3
SFS
WSP
SFS
B3
CD
WSP
MTH
MTH
MTH
WSP
WSP
MTH
MTH
MTH
MTH
MTH

MTH
W1
WSP
MTH

MTH
MTH
WSP
MTH
W1
WSP

65

55
BINDING ENERGY, eV

,,,

PY

......
i

<

<<

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

SGlGniUrTl SG

'

A,Ofnic0

N(E)

>

Se3p,/2
M<M +4f7

Se 3p:

Se 3d

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

93

_> >
>.
>
>>
Bromine, Br

'

35

> >
3d BINDING ENERGY, eV

COMPOUND
67

>>>>>>>)>>>
PHO OELEC RON SPECTROSCOPY
HANUBOOK OF X-RAY

REF.
77

72

KBr
KBr
CsBr
RbBr
NaBr
Li Br
HgBr2

CdBr2
ZnBr2
C18H33Me3NBr
C3H5Ni(PPh3)Br
Pd(PPh3)2Br2
Pd(NH3)2Br2
Pt(NH3)2Br2
Pt(NH3)3Br2
Co(NH3)aSbBra

Rb3Sb2Br9
Cs3Sb2Br9
K2PdBr4
K2PtBr4
K2PtBrs

I
"

bromanil
bromphenol

KBr03

(D
94

70

v.

PHYSICAL ELECTRONICS

BINDING ENERGY, eV

f
s*&

<<<<4<<<<<<<<<
,

PV

<

<

<

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

< 1
Bromine, Br

* *

' *35
Number

KBr
Mg Ka

N(E)

Br 3s

1100

1000

900

800

700

500
600
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

95


Strontium, Sr

38

Number

3d

COMPOUND
130

SrF2
SrF,

BINDING ENERGY, eV
135

I I I >LI I I I I I

>>
HANDBOOK OF X-RAY

REF.
140

W1

143

133

BINDING ENERGY, eV

0
96

PHYSICAL ELECTRONICS

PHOTOELECTRON SPECTROSCOPY

I I
1

3Y

<4

I 4OF X-RAY4 t <

4 HANDBOOK
PHOTOELECTRON

< <

'

<

SPECTROSCOPY

<

<

<

'

<<<<
Strontium, Sr

'38

Number

123

i
700

600

500
BINDING ENERGY, eV

400

100
perkin-elmer

97

i I I I #

))>>)>>)

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Yttrium, Y nt,z39
COMPOUND
155

y3o3
y2o3
YF,

3d5/3

>>*
,

BINDING ENERGY, eV
160

REF.
165

CD

NGD
W1

167

ti

CD
98

PHYSICAL ELECTRONICS

157
BINDING ENERGY.eV

147

<

,,<(<<<<<<<<<

<

<

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

<

*
*
Y
Yttrium, NAur;cr39
i

I I

Mg Ka

147

l
i

i
1000

900

800

700

600

500

400

300

200

100

BINDING ENERGY, eV
PERKIN-ELMER

99

>>)

Zirconium, Zr

I I I I I I I I

Atomic

Number

COMPOUND
175

40
3d%

BINDING ENERGY, eV
180

>>>*>!
j
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

REF.
185

3dV2

Zr
Zr

ZrHz
Zr02

178.7

3d;

W"".

Zr4(OH)alanineaCI8- 12H20

KjZrF,

K2ZrF6
Na2ZrF6
KZrF5 ;HjO
ZrF,

2.4

193

183

173

BINDING ENERGY, eV

<
10

100

i
PHYSICAL ELECTRONICS

4
ip r

< <

<

< <

<

,, .

'Zirconium, Zr* '

Atomic A O
Number rU

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

<

"T

MasNjNja

Mg Ka

\1160
Zr 3dV2

MNN

1135

Zr 3d

m45n23v

1104

N(E)

Zr 3p3/2
i

Zr 3py2
173

Zr4p

x4

Zr4s

Ar

-JJ
I

0
1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
rerkin-elmer

101

)))))))))))))))

Niobium, Nb

Number

)\)\

41

200

Nb
Nb
Nb
Nb
Nb
Nb
Nb

\)
HA>-

3d%

REF.

BINDING ENERGY, eV
205

210
202.2

NbH2

RH2
SPB
B3
MSC
FCF

NbC
NbO
NbO

Nb02
Nb02
KNbO

Nb205
Nbj0

NbBrs
NbCI5
K2NbF7
NbF5

<E
102

))

"1

COMPOUND

})\))))

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

NSC
NSC
RH2
SPB
FCF
FCF
SPB
MSC
SPB
MSC
FCF
NGD
MSC
MSC
MSC
MSC

Nt

N(E)

217

207
BINDING ENERGY, eV

197

1100
PHYSICAL ELECTRONICS

< <

<

<

<

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

PY

I I

<

<

<

< <

'41

Niobium, Nb
i

< <

I I I

Nb(MNN)

Mg Ka
N

m45Nj3n23
1118

M.1SN,V

Nb(MNN)

\ 1109

m.,5n23v
1086

mJ5vv
1054

N(E)

1140

'

1090

1040

Nb 3d%

Nb 3d%

Nb3p3/2
Nb 3pi

Nb 4p
Nb 3s

X4
iitii

**11 nyf'tn

Nb 4s

<
1100

1000

\
900

800

700

500
600
BINDING ENERGY, eV

400

300

200

U1/

100
PERKIN-ELMER

103

>
Molybdenum,
)

I )

I "i

Mo

COMPOUND
225

I I

i I

NAur42

3ds/2

GM
GM
GM
HB
MEC
GM
GM
GM

v-

C7H3Mo(CO)3
C7H7Mo(CO)3+BF4
MoCI2(CO)3(PPh3)2

HB

MoS2
MoS2

GM

MoCI3(PMe2Ph)3
MoCI3(C5H5N)3

Mo02
Mo02
MoCI,
-

MoCI4
MoCI5
MoCI2(NO)2(PPh3)2
MoCI4(PPh3)2

/1

:"MoOC:3(C5H5N)2';
Mooci3(pph3)2 ;
MoCI4(C5H5N)2 .J
MoCI bipyridyl
Mo02CI2 bipyridyl
Mo02 acac2

ft.
r

"

CoMo04

m6o3

'

(nh4)6mo;o2 4H20

\l1

AI2(Mo04)3

Mo03
Mo03

v.

~-

PCL
LB
CEL
PCL
KBA
GM
GM
GM
HB
HB
CEL
HB
CEL
CEL
CEL
GM
NSL
GM
PCL
PCL

_M

I
N(E)

E
240

230
BINDING ENERGY, eV

GM
0>
PCL
GM

240

230

BINDING ENERGY, eV
PHYSICAL ELECTRONICS

220

232.65

CD
104

HAN:

227.7

MoB2
MoSe2

Na2Mo04
Na2Mc04-2H20

235

'

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

REF.

BINDING ENERGY, eV
230

MO
Mo(CO)j bipyridyl

[C5H5Mo(CO)3]2
Mo(CO)4(PBu3)2
Mo(CO)5PPh3

>>>>>.>>

1100

Molybdenum, Mo

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

_ Mo(MNN)

Mo(MNN)

Atomic
Number

Mg Ka

1132
Mo 3d;

N(E)

Mo 3d:

1160

1010

1060

1110

Mo 4p

O Mo 3s
T

Mo4s

JL
1100

1000

900

800

700

500
600
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

105

>>>(

Ruthenium, Ru

Number

44

3ds/j

COMPOUND
275

285

1-

:c

Ru(NH3KN3Br5T,%';P5'"V;nRu(NH3)5N2CI2
Ru(NH3)5(MeCN)Br2
Ru(NH3)5(MeCN)Br3

Ruo2

RuOj V.
.

L '

Ru03
Ru04

'

1
1
1

3d%

CP

Ru(NH3)5N2I2

OF X-hAY PHOlOELEi-rRON aPECTHOSCOPY

REF.

BINDING ENERGY, eV
280

Ru
Ru
Ru

>>>>>>>>>)>>>>
HANljBOOK

1
i
1

it.!
1

Ru

280.0

KW
F
BHH
F
F

3d:

F
BFM
BFM
KW
F
F
KW
KW

292

282

272

BINDING ENERGY, eV

<x>
1
i

106

PHYSICAL ELECTRONICS

< < < < <

<<<I<<<<<< <

' *

HANOBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Ru(MNN)

<

Ruthenium, Ru

Number

44

M45N1N23

<

Mg Ka

X1102

Ru(MNN)

S.

m45n,v
1052

m45n23v
1023

M45VV
979.2

N(E)
272
_

---

_J

965

1015

Ru 3d5/2

Ru 3d

'3/2

Ru 3s

Ru 3p3/2
Ru3p./2j

x4
Ru 4p

In

<D
1100

1000

******
900

800

700

500
600
BINDING ENERGY, eV

400

300

200

100
perkin-elmer

107

CE
UJ

iE *:

wcocotnwwwmmmwm
zzzz_jz2zzzzzzz5zz5zzz

exzzzzzzz

cc

wtnmwtowo]

>
0>

'

>
O

cc

UJ

UJ

O o
Z
Q

CO
X)

fc

Li-?.*

tv.

<., rr>:

hm
o

- n"y

oOOO
mOOOOO
cc
cc
cc
n n
cc
<m
ID

O
a
O

ci

r>

ri

xz

rt

oo2

!!
CLCLQ-CLCLCLCLQ_D.Q_Q.CLCLQ.CL

_C

SZ

Q_

CL
CL

, CL

arcnarcrcrcccrci:

:V'j<
W
!-

occ x;q

X
< cc

o o

<<

OO
cc
cc
x: jc

a: a: oc tr.cc cc a: .a:

z
o

[ ${%?*

CM

o
-x
oo o O;
o
o
x: xi
Q. CL o O : ,x
> <

a)

cc

'

CO

r-M

o
2

>

cr

cc

cc

VT

OK

.- '"J I

cc

rt

a> XI

jr

_r

iO
, ~s. z

~r - o
X? X0
'X

oo
o

<
o

O Z O

cd
o XX o'zoz
X cd
X
Z-C-CC
.-0
UJ
i
x ft SZ SZ SZ x
Xrl XPI
SZ SZ SZ x: 'x: -C -C x: x:
XCI

iZjQC-'OCjOC X
DCia: OC X X X X/ x x
Q_
Q_

Z x

>
X

CO

4
PY

<

Rhodium, Rh

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Rh(MNN)

'

'

'

'

'

Mg Ka

1031

M45N23V

M45W

1001

'

Number

'

m45n,v
V

'45

952.1

Rh(MNN)

300

1050

.1

L,
1000

Rh 3dS/2

1.1

900

950

Rh 3d

3/2

Rh 3p3/2
Rh 3pi/2
Rh 3s

x4
Rh 4p
Rh 4s

1100

1000

900

800

700

500
600
BINDING ENERGY, eV

400

300

200

100

PERKINELMER

109

>>
46
Palladium, Pd

>

>
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Number

COMPOUND

3d5/j

Pdl2

PdBr2
K2PdBr4
K2PdBr4
Pd2(PBu3)2CI4

PdCI,

11

Pd(PPh3)2Br2

Pd(PPh3)2C03

7-~;

'-WlG

Pd(C5H5N)2CI2
Pd(NH3)2Br2
Pd(NH3)2CI2

!:

ii !

Pd[P(OPh)3]2Br2
Pd(NH3)4CI2
Pd(OAc)2
Pd(NH3)2(N02)2
K2Pd(N02)4
;
K2Pd(No2)4
K2Pd(CN)4
K2Pd(CN)4

r
'

-'.'r

jj-C

11

""Jljr

'

:'\b

""

Pd(CN)2

K2PdCI6
K2PdCls
i i.

<
110

" ""T

Pd(PPh3)2(CN);
K2PdCI4
K2PdCI4

-t

"

PHYSICAL ELECTRONICS

..." 'r *

- -*r

' 1

ny*:

v.

3d;

NZM

PdCI2

Pd(PPh3)2CI2
Pd(PPh3)2CI2

Pd

334.9

KBM
KGW
KBM

'

3d%

[Pd(C3H5)Br]2
Pd(C3H5)(PPh3)CI
[Pd(C3H5)CI]2

' !':

340

335

Pd
Pd
PdO

Pd02

REF.

BINDING ENERGY, eV

330

NZM
NZM
KBM
NZM
KBM
CAB
KBM
NZM
NZM
KGW
KBM
BNS
NZM
NZM
NZM
NZM
KBM
KBM
NZM
NZM
NZM
NZM
NZM
NZM
KBM
NZM

KBM
KBM
NZM
KBM

5.25

350

340
BINDING ENERGY. eV

330

<<<<<<<<<< <<<<<<<<'

I<<<<<<<<<<
'
W AMnn Anw nc v r a v ntiArnn

c/Tnni enermnf
HANDBOOK OF X-RAY PHOTOELECTRON
SPECTROSCOPY

Palladium, Pd

Atomic A CZ
Number 40

~l

Pd(MNN)
wuVV
925.6

M.5N,V
1011

Mg Ka

Pd(MNN)

_ L.

-I

N(E)

1050

950

1000

900

Pd 3d,S/2

330

Pd 3d

3/2

. :?
-

|_ i

'

Vfvf
\ r

Pd 3p3/2

rV

x4
Pd 4p
Pd 4s

0
1000

900

800

700

_L
600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-EUMEIR

111

>>> > > > >

/\ *7
Silver, Ag
1 1 1 1

Alomic
Number T1 I

r r

I I 1 \

I I T

I i i

/\

360

cc

oi

357

O
h-

356

>
>

354

356

352

367.9

724

Afl ;0

6.00

721

y'

y/ \
y/
y/

AgOOCC

355

722

/y

LU

> > >

725

// //!
/ //I
//I
/
W/4\

/&y/

358
O

I t

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

723

359

>

> >

726

y -T"

361

A/

/>

y*

380

370

360

BINDING ENERGY, eV

3f

Ag.So"

/ A/ <A

Da la preserved In I abular lorm in S BCtion II. 2.

371

.1111.

370

369

3d5/2

<X>

1 I 1 1

.111! -J. 1 1

368
367
366
BINDING ENERGY, eV

365

1 1

364

112

PHYSICAL ELECTRONICS

Silver, Ag

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

PY

Number

47

Ag(MNN)

Ag 3d,

Mg K a

Ag(MNN)

Ag 3d:

N(E)

1005

975

915

945

885

!
{

Ag 3s

Ag4p
Ag 4s

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
perkin-elmer

113

))))))))))))}))

Cadmium, Cd
*

Number

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

48
789

r T"T~T"

! i i

r rr1i

385

384

\ry

--rrr-

// / /

/ /\
/ /$$49//
// Y //
/
1///
/
/
:// /
;// /
/
<

404. i

787

Cd

3d-

786

383

785

382
O

a:

UJ

LU

381

CCI,

784

ArXdS

/ 'yy\

HI

380

6.

379

378

377

376

Dal presented In ta bular lorm in So lion II. 2.

111!

409

408

3d5/z

<x>
114
V

till

407

PHYSICAL ELECTRONICS

,,,, ,,,,

406
405
404
BINDING ENERGY, eV

l_i

-L..L

403

402

6.76
418

408
BINDING ENERGY, eV

398

)PY

CSClmiUm Od

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

-i1
11<

<

r~*

i
i

'ornic

M5Nj5N45
876.4

Cd(MNN)

MjNjsNaj

\869.8

Cd 3d

Cd 3d

Cd(MNN)

Cd4d

Cd4s

1000

900

800

700

600

500

400

300

200

100

BINDING ENERGY, eV
PERKIN-ELMER

115

>>>>>>>>>>>>>>)

Indium, In

Atomic
Number

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

/\ Q

----]---

855

3d%

>

443.6

I
I

In

oc

\~

Q.

cn
D

_i

Q.

CC
(

<
CC
<
CL
tr
LU

!
458

N()

448
BINDING ENERGY, eV

[NHjiInF,

Data presented In tabular form In Section II. 2.

449

448

447

3d5/2

<X>

' '

11

446
444
445
BINDING ENERGY, eV

' '4431 I

442

100(

116

PHYSICAL ELECTRONICS

< < l< <

J

PY

<

I i i

<

HANOBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

T
-r

>

<

<

(<<<<<<<

Indium, In

Atomic
Number

49

M5N45NJ5

In(MNN)

851.0

MgKa

VYI4N45N45
143.0

In 3ds/2

N(E)

J.
860

910

960

438

-1

__ 1

810

In 3d

3A

In(MNN). feiiSfes

In4d
r.v

msvm.
"M00j

25ss

Sskr

In 3P3/2

x4
In 4s

y yyM>Wii*

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

In4P

100

PERKIN-ELMEH

117

>>>
Tin, Sn

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

50

COMPOUND
480

3d%

BINDING ENERGY, eV

REF.
490

485

484.65

Sn
Sn
Sn
Sn
AuSn
SnSe
SnTe

Sn

3d:

SnPh4
SnPh4
SnPh4
SnS
SnS

SnS2
Snl2
SnBr2

8.5

Me4NSnCI3
Na2Sn03

500

SnO

480

490
BINDING ENERGY, eV

SnO

Sn02
Sn02
*Sn02 (NH4)2SnClasv

IT

3ds/j

\Ti

486.4

SnO

(C5H5N)2SnCI4v:
PhjSnCI

SnCI2
SnCI2-2H20
TIT

,Me2Sn acac2
ri

;: I
,i

[|

;(Ph3P)4SnCI .v:=rix,
(Ph3P)4SnF ''
SnF2
SnF2
SnF4

ui

;
'

'V

KSnFj

KjSnF,-

-it.; .,1-.

r'r:-vr' V -

:V

'I !

<X>
118

8.5

500
PHYSICAL ELECTRONICS

490
BINDING ENERGY, eV

480

i i

DP Y

<
X-RA HHOTOtLEC*niON SPECTROSCOPY
<
..ANofuOK |
---r
i

< < < <

i I i

< <

I I

<

i i

< <

Tin, Sn ;X50

-1-1-1-1-1--r
1

Sn(MNN)

msn45n45
824.4

Mg Ka

M4N4SN45
815.8

__

_1

920

L.

870

___-

820

Sn 3d%

L.

770

Sn 3d%

480

"4SntMNN)Vyg

Sn 4d

x4

: mtKH
'

Sn 4s Sn 4p

<E
1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100

PERKIN-HLMER

119

*Aj /tin/on, ob NAumbe5i )))))))

COMPOUND

3ds/j

BINDING ENERGY, eV

525

Sb
Sb
Sb
AlSb
BujSb

Ph3Sb

..JT"""'"'
r
'

530

SbjS5

Sb2S3
Sb2S3
Ph3SbBr2
Me3SbBr2
BuNH3SbI4
Sb203
_
Sb2Oj NaSbOj

"

SbS(C12H25)3

Sb(OAc)3
i

!i.i

Sb205
Sb205
Cs2Sb2I9

_
;.r

'.

___

,;

Cs3Sb2Clsvvfei|?|V-,
Cs3Sb2Br9"v>r
Cs2SbF5

CsSb2F7
CsSbF

K2H2Sb2OH2,,
SbCI5(POPh3)

KSbF6
NaSbF6
Et4NSbF6

$
120

PHYSICAL ELECTRONICS

Ianl.Iok >,.Vra. )hoi - \ec. Ins, Itrc.Iopy I I

REF.

3d5/2

535

PhjSbS

Ph3SbO

I I I I I

I
I

CD
MSV
SFS
MSV
BC4
BC4
BC4
BC4
MSV
MSV
BC4
BC4
BC4
BC4
MSV
BC4
MSV
MSV
MSV
BC4
BC4
BC4
BC4
BC4
BC4
BC4
BC4
MSV
MSV
MSV
MSV
MSV
BC4
BC4

Sb

528.05

3d-

9.35

543

533
BINDING ENERGY, eV

523

< <

< <

OPY

i i

<

' ' '

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

'

Sb(MNN)

l" '

--

"1

M5N45N45

T '

* * * * *

Antimony, Sb

Atomic CH
Number 3 |

798.7

hYI4N45N45

(3P'/2)

Mg Ka _

Sb3dsA

789.5

(3pa/2)
Sb 3da/

890

730

810

N(E)

Sb(MNN)

523

Sb3pV4
Sb4d

x4
L i ic

Sb4s
b04s

nt

Sb4p

CD
i
1000

900

800

700

600

I
500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

1?1

>>>>>>>>>>>>>>
Tellurium, Te
52

>>>>>>)>>>))>>>>
X-RAY PHOTCJtLECTnON SPECTROSCOPY
HANDUOOK Oh

Number

572.7

Te(H-HCSNH;);CI;

10.34

588
'|PhTc<cyCH*Br

578
BINDING ENERGY, eV

N(E)
E
568

</"p-MeOCflH4TeCl3

Data presented in tabular form in Section II. 2.

579

578

577

3dS/

<E

576
575
574
BINDING ENERGY, eV

573

572

100
\

122

PHYSICAL ELECTRONICS

I t

(<()<(<<<<
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Tellurium, Te
i

Te(MNN)

Atomic CO
Number

>

m5n45n45
771.5

/\a

/ \

Te3ds/,

Mg Ka _

m4n45n45
761.2

T e 3d3/

N(E)

ilit
770

800

740

568

Te(MNN)

Te4d

x4
Te4s

Te4p

<D
1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
perkin-elmer

123

locWlWs.'
COMPOUND
615

.
.....
3d%

625

620

Rb3Sb2I9J

3d%
619.5

REF.

BINDING ENERGY, eV

(
iodan

'''

HANDbxJOK Or X-RAV PHOTO cLECTh UN SPtCTROSCOPY

MVS
MVS
MVS
MVS
MVS
N
N
N
OYK
T
W1

637

627
622
BINDING ENERGY, eV

I10(

124

PHYSICAL ELECTRONICS

<

PY

<

<

*<<<< <

**<<
Iodine, I ,is;53

HANOBOOK OF X-RAY PHOTOEIECTRON SPECTROSCOPY

Lil

M5N45N45

I(MNN)

748.1

Mg Ka
M4N45N45
736.4

N(E)
612

745

775

715

I3dV2

I 3d

l(MNN)
[

4d

(+LI)

x4
: 4s

<x>
1100

1000

900

800

700

500
600
BINDING ENERGY, eV

I4p

400

300

200

100
PERKIN-ELMER

125

>>>>>>>>>>>>>>
Xenon, Xe

Number

54

3ds/j

COMPOUND
665

Xe
Xe
Xe
Xe

(in C)
(in Fe)
(in Cu)
(in.Ag) XjS.

Xe?(iAu)W.
Na4XeOa

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

REF.

BINDING ENERGY, eV
670

)!

675

<D

W1
CH2
CH2
CH2
W1

673
678
BINDING ENERGY, eV

<J>
126

PHYSICAL ELECTRONICS

<

< < <

'

HANOBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

<

< < <

Xenon, Xe

m5n45n45

54

Xe in C

Xe(MNN)

721.5

Number

Mg Ka

M4N45Njs
708.2

I
720

700

710

N(E)
663

Xe 3p3/2

Xe 3d%
Xe(MNN)

Xe 3d %

Xe 4d

x4
V-V<

Xe 4s

Xe 4py2

<X>
1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

127

>> >>>>
Cesium, Cs

Number

55

3d5/j BINDING

COMPOUND
720

CsOH
CsCI
CsBr
-V;

~'?s

Cs3P04
Cs4P207
CsCI04

1
1

I I

I I

I I I I I I I

HANDBOOK OF X-RAY PHOTOELECTHON SPECTROSCOPY

REF.

CsOH

730

1
J

I
j,"

fes

ENERGY, eV

725

I I

cD
MVS
MVS
MVS
MVS
SGR
MVS
MVS
MVS

723.95

N(E)
E
743

<D
128

738

728
733
BINDING ENERGY, eV

723

718

11C
PHYSICAL ELECTRONICS

<

<

< < < < < < < < < <

Cesium,

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

3C0PY

--

-1r

M5N45N45

Cs(MNN)

698.4

CsOH
Mg Ka

3d,

MJN45N45
684.7

'

Atomic C I
Number Ox

C
VO

N(E)

m45n45v
718

Cs 4d

Cs(MNN)

usessSWi*?!

P'/2
Cs 4s

v.v

0
J1100

1000

900

800

700

500
BINDING ENERGY, eV
600

400

300

200

100

PERKIN-ELMER

129

>>
Barium, Ba

Number

778

BaSO<W
BaFr

'
v

>"

3d5/2

BINDING ENERGY, eV
783

REF.
779.65

cD
W3
W3
W3
W3

795

790

785

BINDING ENERGY.eV

PHYSICAL ELECTRONICS

788

800

130

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

56

COMPOUND

BaO
Ba erucate
Ba chloranilate

780

775

>

< <

iHANDBOOK
< <OF

<<

<

4<444<<<<

Barium, Ba

X-RAY PHOTOELECTRON SPECTROSCOPY

-r~

Ba(MNN)

Number

56

BaO

m5n45n45
668.7

Mg Ka

\M4N45N45

655.9

Ba3d

M45N45V

775
i

655

555

605

Ba4d

:Ba(MNN).-.

J\
'

'

\ Wv>;

-;v\

'

j
.

X4

Ba4p3.

Ba4p 1/2

Ba4s

1100

1000

900

800

700

500
600
BINDING ENERGY, eV

.
400

300

200

100

PERKIN-ELMER

t
0

131

)
i i,
,
r v
Lantnanum, La> :si)7

k i

COMPOUND

LaF,

i i

3ds/j BINDING ENERGY, eV

830

La203

> >
835

>>>)>>
HANulSOOK
t
X-RAY PHOl OELEC RON
UF

REF.

SPECTROSCOPY

3dV,

840

834.92

d>
W1

16.8

870

860

840
850
BINDING ENERGY, eV

830

820

r! i
Ji

:: I

!! !

$>
i

132

PHYSICAL ELECTRONICS

 <<<<4<4<<< <
-PY

Lanthanum, La

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Atomic
Number

57

La203
Mg Ka _
--T
1

La3d3/, La3ds/j

La(MNN)

=>a

820

La 4d3/j

La(MNN)

Jj La 4d5/z

x4
La 4p3j
La 4s

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

La 4py2

200

100
PERKIN-ELMER

133

>>

>>>>>>>>> > >

Cerium, Ce

Number

58

COMPOUND

HANO0OOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

ENERGY, e V

880

REF.
885

Ce

Ce02
CeO,

S=Satellite lines
895
905
BINDING ENERGY. eV

134

PHYSICAL ELECTRONICS

j
I

3ds/j BINDING
875

>>>,

1
)PY

<<<<<< <<<<<<<<<<

< II
'

nANDBUOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

'

<<<<<<<<<<
Cerium, Ce

Number

58

Ce02
Mg Ka

Ce 3d
'

N(E)
E

875

x4

Ce(M4sN45N45)

4>iHj

'yN

-jM

o a
4p
Ce

I'

Ce 4d

C0(M45N45V)
Na
*

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKINELMER

135

bknikriumSin ix o2
COMPOUND

3d5/,2

BINDING ENERGY, eV

1080

1085

Sm

Sm203

SrrijOj

*
REF.

1090

DKM
DKM
0

1096
1086
BINDING ENERGY, eV

136

PHYSICAL ELECTRONICS

Samarium, Sm

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Atomic
Number

Sm203
Mg Ka

Sm(MNN)

Sm 3d;

N(E)

310

360

410

460

Sm(MNN)

Sm 4d

1100

1000

900

800

700

500
600
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

137

))>))))))>>>))

Terbium, Tb

Number

COMPOUND

4d5/j BINDING
145

>
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

65
ENERGY, eV

150

REF.
155
0)

Tb

190

180

170

160

BINDING ENERGY, eV

l I

<x>
!

138

PHYSICAL ELECTRONICS

150

140

I
SuOPY

4<<<44<44<4 <

Terbium, Tb

HANDBOOK OF X-RAY PHOTOeLECTRON SPECTROSCOPY

Number

"b

Al Ka

Tb 3d%

Tb 3dV,

V
N(E)
140

\
Tb(M45N45V)

Tb 4d

Tb(M45N45N45)

CD
1300

1200

I
1100

_ L_ i_

1000

_!

900

800

600
700
BINDING ENERGY, eV

200

100
PERKIN-ELMER

13

Erbium, Er

Atomic
Number

>>>>>>>>> > >>

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Q
UU

----1---r

COMPOUND

4ds/j
165

Er

Er203
Er203

BINDING ENERGY, eV
170

REF.

175

4d
169.2

<D
NGD
(D

180

160

170

BINDING ENERGY, eV

168.5

0
180

140

PHYSICAL ELECTRONICS

170
BINDING ENERGY, eV

160

<(<<<

Erbium, Er

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

PY

68

Number

Al Ka

o
N(E)

yl

160

Er 4s
and
ErtM45N45N45)

V\

Er 4pVa
Er(M45N45V)

Er4d

xyi

Er(M5VV)

\ Er(M4VV)

Er 5p A

<E
160

1000

900

800

1
700

1
600

III!
500
BINDING ENERGY, eV

400

300

200

'

100

PERKIN-ELMEH

141

1)1)1 ))))))))))
Atomic 7Q
Hafnium, Hf Number
t L
COMPOUND
10

4f%

BINDING ENERGY, eV
15

Hf

)))))))))))))))
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

REF.
20)

CD
W1

HfF<

210

Hf02
Hf4(OH)Balanine8CI8- 12H20

4d5/2

BINDING ENERGY, eV
215

220

NGD
KNP

1.55

25

15

BINDING ENERGY, eV

<
1000

142

PHYSICAL ELECTRONICS

< <

PY

<

<

<

<

<

<

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

<
Hafnium,
*Hf ' '72
'
Number

Hf 4d

Hf 4d

1000

900

800

700

600

500

400

300

200

100

BINDING ENERGY, eV
PERKIN-ELMER

143

>>>>
Tantalum, Ta

Number

COMPOUND

73
4f7/z

20

Ta
Ta
Ta

ias,
JaSj

TaSi2
T a5Si3

KTa03

r.--;

r.uc:

:P%
"a B1*5

TaCi,
TaF5
K2TaF7

'. ;-V.

'' 'T'
'

:.g-'

I t

I t

30
i

<D
RH2
MSC
RH2
MSC
MSC
MSC
MSC
MSC
MSC
NGD
MSC
MSC
MSC
MSC
25
BINDING ENERGY. eV

<D
144

PHYSICAL ELECTRONICS

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

REF.

BINDING ENERGY, eV
25

I I t

<<<<I<4<4<<<<<<<<<<<<<<<<<<<<<
.
Tantalum, Ta Alomic

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Number

Al Ka
Ta 4d,

Ta 4f

Ta 4d:

\-

Ta 4s

1000

900

800

700

600

500

BINDING ENERGY, eV

400

300

200

100

PERKIN-ELMER

145

..

>>
/\
~7
Tungsten,
W

Atomic

Number

4f%

30

WB

'

WC
WC

WN

wo2
W02

'

IJ ;

..

.L ; -V.
-

''

? -y '

':0?Y-

WOCI4

146

PHYSICAL ELECTRONICS

1
I
1
1
1
1
i> .

'i

& mmmm
W Br.

r*

ai2(W04)3
ai2(W04)3
(NH4)6W7024-4H20

WCI4(PMe2Ph)2

k2wci6
W03
wo3
W03
wo3
wo3
wo3
wo3
H2W04
LI.WO.
NiW04

REF.
40

35

WCI4(PEt3)2

BINDING ENERGY, eV

ws2

>>

HANDBOOK OF X-RAY PHOTOELECTHON SPECTROSCOPY

COMPOUND

w
w
w
w

>*

___

_1

rr1?
.t.'

45

L.

_ --

_l

35
BINDING ENERGY, eV

L.

25

4
)PY

I 4

Tungsten, W

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Number

74

Al Ka

1000

900

800

700

600

500

400

200

100

BINDING ENERGY, eV
PERKIN-ELMER

147

Rhenium, Re

75

COMPOUND

43

ReCI4(Et3P)

k2ReCI8
KRe04

r.
.'-VV;

48i

<D
F
F
F
F
LB
LB

ReCI2(PMe2Ph)4
ReCI3(PMe2Ph)3
ReCI4(PMe2Ph)2
KjP.eCIs

y.

sv"

LB
LB
LB
LB
CH1
W1

44

BINDING ENERGY, eV

CP
148

PHYSICAL ELECTRONICS

> > >

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

REF.

BINDING ENERGY, eV

Re
Re
ReCiN2(Ph2PCH2PPh2)2
"
'
ReCI N2(PMe2"Ph)4
ReOCI3(PPh3)2

ReCIN2(PMe2Ph)4

> > >

> ,>
i

4f%

38

(I
,PY

n <<< <

(<<<<

Rhenium, Re

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Atomic "7C
Number f O

Al Ka

Re 4f %

Re 4f:5/2

'

N(E)
Re 4d%

Re 4d3

Re 4p3

Re 4s

<X>
1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100

PERKIN-ELMER

149

 >>>

>>>>>>>
Iridium, Ir
77
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Number

COMPOUND
60

Ir
Ir
Ir
Ir(PPh3]2CIN2
Ir(PPh3]2CI02(CO)
,Ir(PPh3] 2CI(CO)2
Ir(PPh3) 2I02(C0)
Ir(PPh3) 2CI(CO)(C2F4)
Ir(PMe2Ph)3CI3
Ir(PPh3)2CI[C2(CN)4]
KIr2(CO)4CI4
K2Ir2(CO)4CI5
...
Ir(PMe2Ph)2CI4
Ir(PEt3)2CI4
IrCI,
;Ir(CO)3CI
Ir (ethylenediamine)3I3

4f%

REF.

BINDING ENERGY, eV
65

70

I
.

N(E)

Ir (ethylenediamine)3(SCN)3_

BINDING ENERGY, eV

Ir (ethylenediamine)3(N02)3
Ir (ethylenediamine)3CI3
Ir (ethylenediamine)3(N03)3
'
---

rK3IrBr6

.....

~K3lrCI8

!K2IrBr6

'

K3Ir(CN)6

K2IrCI3

J<2IrCI6

:K2IrC!s

"

;K3Ir(N02)6
:(NH4)3IrCI6
(NH4)2IrCI6
KIrCI5(NO)

10C

150

PHYSICAL ELECTRONICS

Iridium, Ir

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Number

77

Al Ka
Ir 4f

Ir 4f,

N(E)

0
1000

900

y
800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

151

<

o
o

LU

LU

CMO>

ULU

cr

a: cr cr

m
oo
o
>o>9oo
5<222
Q-Q<
<
>cl>>clclcocl
mm
cccnirLUiiJixuJiLiJLiJ-iLUir-imcnoo
exaroocrccxcrcrxo
' '
CD CD

>
0>
':- '4

i.

o
cr

i.

UJ

LU

"

"

CD

I
I"

#,:;.#

!'.
.

|.
t.

'*4

CO

>pff

. -l

T
rvi

c*

.c

_c

CL CL

r>

3 _c

cl

mm

-T

Xr* Xcn

0 .C

<N

oaOO
OQ
_cj

2 an "i
r*

r*

r*

noo

rsi

rj

r>

LvL;Oi

_
r JT - -
n n r r r pr n r l
<n
n

m cl CL CL
mammmm

a.
5

<N

ooO

CS

ma,g.

<
o

x.

Tf

i*-

o'

CL CL CL X X X X Q- X LU O O
X X CL O Q-X m
O CL O O
-> .+_<
0- CL CL CL CL CL CL CL. CL CL DL CL CL CL *:.X CL clcl
*-'

o
GC

:'

C<

o
z

SEt-.'1?

-t

S-;!

<D

to

CO

>I

. QJ

O O O 2 UJ
CL bcC CL

CM
IX)

<

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

'

Platinum, Pt

Number

78

Mg Ka

500
BINDING ENERGY, eV

400

300

200

100
PEHKIN-HLMER

153

> Gold,
> > >
. Au( najs;79

ENERGY, eV

4f7/j BINDING

COMPOUND

>

80

AgAufeMr
aiau2
AljAu

...

.....

AI2Au
Ga2Au

SnAuppy;
AuCN r a .
AuCI
NaAuCI,

....

'

'-v'- *
.

"

...

--

11

haniook x-rAho. .Alec.on !ctru.cop<

Sr

REF.

r
'

90

85

Au
Au
Au

,
i i

JHB
FKW
MKL
LPY
WHP
FKW
FKW
WHP
WHP
FHP
FHP
KI2
KI2
KI2

87
BINDING ENERGY, eV

<E
1C

154

t
PHYSICAL ELECTRONICS

i
)PY

<<<<< <
Gold, Au

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

' 79

Number

Mg Ka
Au 4f7A

77

Au4d

Au4d

Au 5p3/.

500
BINDING ENERGY, eV

100
PERKIN-ELMER

155

>> >>>>>
Mercury, Hg

Number

COMPOUND
98

Hg
Hg
Hg

HANDBOOK OF X-BAY PHOTOELECTRON SPECTROSCOPY

80

4f%

BINDING ENERGY, eV
103

REE.
108

CP
SMB

99.7

BM

113

103
BINDING ENERGY, eV

<X>
156

PHYSICAL ELECTRONICS

I
OP Y

<(<<<

Mercury, Hg

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Atomic 0
Number OU

Mg Ka

93

Hg 4p3
Hg 4py

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

157

Thallium, 11

I W"i
K

Atomic
Number

COMPOUND
115

TI,Si

UI

>

4f%

I I l l l I

.......

>

)>>>.>>.. >

125

122
BINDING ENERGY, eV

158

PHYSICAL ELECTRONICS

HANUdOOK OF X-RAr PHOT DELECT RON SPECTROSCOPY

REF.

BINDING ENERGY, eV
120

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Thallium, T!

Atomic

Number

Q-f

OI

Mg

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

159

>> >>>>>>>>>>>>>>
OQ
Lead, Pb
COMPOUND

135

Pb
Pb
Pb
Pb
Pb
Pb
PbTe
PbSe
PbS
F>bS

1,

Ph<Pb

_iL
Pblj
PbO
PbO
PbO
PbO "
pb3o4 ;
'

.Pb30

PbOj

i; ;

Pb02
Ph3PbCI

PbF2

<x>
160

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Atomic
Number

PHYSICAL ELECTRONICS

4f Vz BINDING ENERGY, eV
140

REF.
145

136.6

Pb

LKM
BM

MWM
SFS
KOW
SFS
SFS
SFS
MV
MV

MV
KOW
0
MV
TT
MV
KOW
KOW
MV
MV
MV

4.94

150

140
BINDING ENERGY, eV

137.5

MV

130

PbO

4.9'
150

140
BINDING ENERGY, eV

130

OP Y

<

Lead, Pb

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Pb(NOO)

1
N7OJ5O45

--

Pb 4f %

1160.45

Pb 4f

NgOasOas

Alomic QO
Number fi/

Mg Ka

1157.15

x0.1

N(E)
130

'

>

1150

y>*

yVn

Pb 5d

<D
130

Pb 5p

J.
1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

161

 > I ' >>> >>>>>>>

Bismuth, Bi
83

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Atomic
Number

COMPOUND

4f%

155

BINDING ENERGY, eV
160

REF.
165

Bi
Bi
Bi

BY-;r
Bi
Bi

"A.

Bi2Te3
Bi2Se3
Bi2S3
Bi2S,

ISb, v.II#S|':

r2o3

Bi203
BijOj- 2H20
BijMoO
in a di u3

(BiO)2Crfo7l;
Bi2Ti207
BiOCI
Bi2(S04)3-H20
BiF.

$
162

PHYSICAL ELECTRONICS

7~.
'.f

"

160
BINDING ENERGY, eV

((<<<<<<*

(<<<<<

Bismuth, Bi

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

>y

Number

83

Bi 4f %

Bi 4f

Mg Ka

N(E)
150

Ri ArL

Bi 4d

Bi 5d

<D
I
1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

163

I I I I )

Thorium, Th

Number

COMPOUND
330

I I I

III)) )))))))))

90
4f%

BINDING ENERGY, eV
335

REF.
3403

FBW
W1
VLD
W1

.
5d%

BINDING ENERGY, eV
85

Th
Th ox
Th ox
ThOj
v

'

Th(OAc4)
Th3(P04)4

ThBr4-10H2O
tTh'u

Oxide

Oxide

<D

80

FBW
FBW
VLD
NGD
NMS
NMS
NMS
NMS
NMS
NMS
NMS
NMS

9.2-

330

340

350

BINDING ENERGY, eV

ThF

336.25

9.3

350

164

PHYSICAL ELECTRONICS

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

(D

(ThF4
VT hF

.'JhCI4

333.05

Th
Th
Th ox
".Th ox

iThOj

340
BINDING ENERGY, eV

330

H>

:opy

<

i
'

<

<

<

' * ' *

<

<

HANOBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Th

'

<(<(<<

Thorium, Th

Number

90

Th 4f7/
%

4f%

Mg Ka

Th 4d3/2

330

Th 4d

Th 5d,

Th 5d

Th 5s

330

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

165

>>>> > >

U
92

Uranium,

4f7/j2

375

u
u

U./Y

L-v

1
1

U02
U02
'<

k2uFs;tff

.i

y/ .

ji,

'$

....

:'
i'

UF4

CD
VRP
AT2
FBW
FBW
AT2
VRP
CG
CG
CG

<J>
166

>

> >

377.2

VRP
PMD
PMD

10.85

394

ji
\:i

'

yO

385

-'.Til-'"' ;

UOj

'V/.r-

REF.

BINDING ENERGY, eV
380

Im

HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Number

COMPOUND

u308

I t

PHYSICAL ELECTRONICS

384
BINDING ENERGY, eV

374

PY

<<<<I<<<<<<<<<<
<<<<4<<<<<<<<<
[
HANDBOOK OF X-RAY PHOTOELECTRON SPECTROSCOPY

Uranium, U

Number

92

Mg Ka

U(N67045V)

n(E)

1000

900

800

700

600

500
BINDING ENERGY, eV

400

300

200

100
PERKIN-ELMER

167

!>>

1. Tables of Auger Parameter Data

Line position data from the literature that are in
cluded along with the elemental spectra for F, Na,
Cu, Zn, As, Ag, Cd, In, and Te in Section II are
presented as two-dimensional plots, rather than
the one-dimensional binding energy charts in
cluded with the rest of the elements. While these
two-dimensional plots are more useful for

chemical state identification, they lack the

necessary space for inclusion of some chemical
states, and references cannot be included. The
tabulations presented in this section are the basis
for the two-dimensional charts in Section II. It
should be noted that a number of chemical states
included here were not incorporated in the plots.

ACKNOWLEDGEMENTS

Gratitude is expressed to Shell Development Com

pany for the use of some unpublished energy data,
and especially for permission to publish several
two-dimensional chemical state plots in a form
similar to that in the comprehensive paper by C. D.
Wagner, L. H. Gale, and R. H. Raymond, submitted
for publication.

168

PHYSICAL ELECTRONICS

<<<< <

<

Fluorine, F

*
Atomic
Number

Compound

LiF
LiF*

NaBF4

c4f5>

CF0)

(CF2)n
Ni(OOCCF3)2

NaF
MgF2
(nh4)3aif6

Na3AIF8*
k.aif*
Na2SiF6
CoSiF6
CaF2
"
Na2Ti Fa

7.

..

"K3FeF6

Fe(MPT)PF6a>
NiF2
"NiF2*
CuF2
CuF2

1s

kl23l23

684.9
684.6
686.8
687.2
689.2
689.1
688.2
684.2
685.3
684.5
685.3
685.1
685.8
685.8
684.6

654.9
655.8
653.0
656.7
653.1
652.1
653.1
655.2

" 684.8

'

"

""

<

i 4

77685.1

7.

KjTiFe*

f-MnF2*

< <

684.6
683.8
686.1
684.9
684.8
684.1
684.5

'

654.3
655.4

"

654.3
654.4

+ hu

1339.8
1340.4
1339.8
1343.9
1342.3
1341.2
1341.3
1339.4
1339.6
1339.9
1339.6
1339.5
1339.0
1340.3
1340.2

653.2
654.5
655.6
7;"7 655.3 *"1340.4
.'! 655.9 '* 1340.7
655.7 . 1340.3
'1340.0
656.2
1340.4
654.3
1340.5
655.6
1340.6
655.8
1341.3
657.2
1340.9
656.4
"

.......
....... .......
. . . . . . . ....

'

Ref.

Compound

1s

KL23L23

a + hu

O
VV1

ZnF2
ZnF2*
Na2GeF6"

684.3

684.8

655.8
655.8
654.2
656.5
656.0
655.3
655.4
659.5
656.0
656.4
656.6
654.6
654.1
654.0
656.4

1340.3
1340.6
1339.9

W1
W1

W1
W3
W1

W3
W3
W1
W1
W1
W3
W1
W1

"i
j

"1
i
|

3W3 "1
';W1 V
VV1

'""W1
"

"

W1
GW
W1
GW
W1

'

Ref.

GW
W3
685.7 _
W1
1341.3
W1
7~T 684.8 V
'SrF2
1341.1
685.1
W1
YF3
1340.1
684.8
W1
Na2ZrF67 .
1340.6
685.2
W1
K2NbF7"
1342.0
682.5
AgF
GW
684.4
1340.4
GW
CdF2
""-77
77
684.2
73~
.
W1
7
7
.1340.6
CdF2
685.0
.7r\ 341.6 . : W1
'.v.'V .
InF3
- 1339.7
;.
W1
NaSnF3* v. " : 7 . 685.1 ""
"
1339.5
686.4
W3
KSbF6
1339.7
685.7
W1
CsF
683.5
1340.0
W1
BaF2
----T684.33r658.2T1342.5 :;syW1
XaF3
: 684.4
341.8
657.4
W1
,PrF3
X.7'v
684.6 -# 657.2 J'l341.8W1
NdF3* " *
"684.4 """'657.2
1341.6 "'W1
SmFj'
1340.7
685.2
655.5
W1
HfF4*
655.2
1340.2
685.0
W1
K2TaF7*
"""77
""'"658.7
683.4
'1342.1
W1
77"
PbF2
657.2
Wl
1341.9
684.7
7ThF4
"

""

"

-177'
'

'

'

"

"

"

'

'

I
'

"Omitted from plot because of crowding

= C..H,,N, a ligand with three methylpyridine rings.
b) C.F and CF are fluorinated graphite samples.

a) MPT

<
poEnKINI-l Ik/terra

>>>> >
Sodium, Na

Number

1s

kl22l22

1071.5
1071.8
1072.5
1071.1
1071.4

994.4
994.5
990.0
988.8
990.4
990.8
991.4
990.2
990.0
990.0
990.0
990.7
990.6
990.6
990.0
989.6
987.3

Compound
Na
Na
Na ox

NaF
NaCI
NaBr
Nal
NaOAc

'

Na2C03
NaHC03*

NaOOCH*

:Na2C204 a.

i' _y*

Na thioglycollate*
Na EDTAa)*

NaN02*
tfNaNOj

"vNaBF4

.?,

t Na3AI

Na2SiF6
Na2TiF3*
Na2GeF6

11

1071.6
1071.5
1070.8
1071.3
1071.1
1070.9

.1070.6

1071.0
1070.6
1071.4
1071.2 1072.5
1071 .7 f
1071.5
1071.4
1071.5
'

988.4

987.9
988.7
988.3

"Omitted from plot because of crowding

= Na salt of ethylenediaminetetracetic acid

a) NaEDTA

b)

Chloramine-T = CH..C,H,SO,NNaCI

<D
170

PHYSICAL ELECTRONICS

+ hu

Ref.

Compound

2065.9
2066.3
2062.5
2059.9
2061.8

KL1
BS

Na2ZrF
Na zeolite

BS
W3
W3

NaP03
Na2HP04
Na2S02*
Na2S203*
Na2S204
Na2S04

2062.4
2062.9
2061.0
2061.3
2061.1
2060.9

...2061.3
2061.6
2061.2
2061.4
2060.8
2059.8

W3
W1
W3
W1

W1
W1
. W1
W1
W1
W3

T'ws
W3

.2060.1 ;:W3
2059.4
2060.1
2059.8

~"W3
W3
W3

1s

1071.4
1071.6
1071.6
1071.4
1071.2

1071.4
1071.0
1071.0

..

Na benzenesulfonate* 1071.1
Chloramine-Tw*
1071.6
1071.0
Na2Cr04
1071.4
Na2Cr207*
1070.7
NaAs02
1070.6
Na2Se03
1070.7
Na2MoO;
:
""Tf; 1071.6
Na2PdCI4*.
"
'.N a S n O 3 H 0 * I
1070.9
2
7
2
*'.,
:Na2Te04
? 1070.9
1071.1
Na2W04*
1071.7
Na2lrCI5-6H20*
1071.1
NaBi03*

"

"

'

kl23l23

a + hp

Ref.

988.8
989.0
989.4
990.1
990.4
990.3
990.8

2060.2
2060.6
2061.0
2061.5
2061.6
2061.7
2061.8

W3
W3
W3
CD
W3

990.0
989.9
989.2
991.1
990.6
990.8
991.1
990.2
990.4
, 990.5

2061.0
2061.0
2060.8
2062.1
2062.0
2061.5
2061.7
2060.9
2062.0
2061.4

990.6
989.4
991.1

2061.7
2061.1
2062.2

W3
W3
W3

"

J&~ 990.6 2061.5 , ;

'

W1
W1
W3
W1
W3
W3
W3
W3
W1
W3
W3
W3
W1

j
I

<<<<<<<<<<<<<<<<
I
Copper, Cu

Number

Compound

AI2Cu
CUjO
CujO*

Cu20*
CuCN
CuCI
CuCI

'

Cu2S
CuC03r"

CuO
'

CuO*'

CuO*

....

l3m45mJ5
918.6
919.2
919.0
919.2
918.2

"

'

CuF2
CuF2
CuSiOj

CuS04 aq
CuCI2*
CuCI2*
'

CuPT(PF6)2a)

"Omitted from plot because of crowding

a) PT = ligand, C,.HN containing three pyridine rings.

CD

.
Number

(!)

S3

GW
MRC
kpm

FKW
W3
FKW
GW

':

MRC";

W3 ]
W3
'
GW
W3
W3

wi
MRC 4
gw ;
S3
W1
GW
;
W1
q
GW "*'i
W1
W1
"'

Zn
Zn*
Zn*
Zn *
Zn*
Zn*
Zn*
Zn*
Zn*
ZnO
ZnO
ZnO*
Zn ox
Zn ox
Zn acac2
ZnF2 .
11 2
:
'
Zns ; 7;-""
ZnS
'

ZnBr2
Znl2

'

30

" '

1021.4
1021.7
1021.5
1021.7
1021.8
1021.6
1022.1
1021.9
1021.4
1021.7
1022.5
1022.5
1021.8
1021.9
1021.2

7 1022.4
V 1022.2

Ref.

2013.8

992.4
2013.9
992.2
W3
2014.2
992.7
S1
2014.3
992.6
CE
2013.8
992.0
KL2
2013.6
992.0
KPM
992.0
2014.1
GW
992.3
2014.2
HF2
992.5
2013.9
MD
0
988.8
2010.5
2010.2
GW
987.7
987.6
2010.0
HF2 :
W3
988.2
2010.0
989.1
2011.0
CE
W3
987.9
2009.1
986.7 ?: "2009.1 :,"-W3 "7
986.2 S72008.4 -i.V: GW :<
"
2010.6
HF2 :
988.2
GW
989.7"""""2011.7
W3
2010.7
987.5
GW
988.7
2011.6
988.5 7 "72009.6" ?-: wi "
991.3':7; 2011.3 %'i* HF2

'

'

'

r- qr" "V1022.4

1022.0

1023.2

1022.9
1021.1
ZnPT(BFj2a,:.Sr?:7-"
'
1022.0
ZnTe

a -f hit

l3m45m45

2P%

Compound

Ref.

a + hu

1851.0
1851.2
932.0
1851.4
932.4
1851.4
932.2
1850.8
932.6
1851.3
932.5
918.8
1851.2
932.4
918.8
1851.9
918.3
933.6
1849.6
932.2
917.4
1849.8
932.2
917.6
1849.1
932.2
916.9
1847.6
932.9 .
914.7
1848.0
915.8
932.2
1847.6
915.2
932.4
1849.9
932.3
917.6
7934.8 "" 7 916.5 77:; 1851.3 "7
.1851.4 %
.. 933.5.. ......917.9
1851.7
918.3
933.4
1850.9
917.9
933.0
1851.8
936.8
915.0
1852.1
916.2
935.9
1850.1
915.4
934.7
935.3 :> 916.1. -n 1851.4 J

1849.9
934.2 : 915.7
1850.3'
915.3'
935.0
1849.9
933.8
916.1
932.4

<<<4<<<<<<<<
Zinc, Zn

29

2PVz

Cu
Cu*
Cu"
Cu*
Cu*
Cu*
Cu*

< <

"

'

'

>

PER KIN-ELMER

171

>>)>>>

Arsenic, As
Compound
As
As
As

"NbAs
GaAs

')

As2Se3

"

Vv'

MeAsI2
As2S3

41.3
41.3
41.6

1225.4
1226.3
1225.2
1226.2
1225.6
1223.5
1223.1
1222.5
1222.2
1222.9
1221.3
1220.2
1219.5
1218.3
1219.1
1219.0

"

Me3AsS
AsBr3
As203
As203
2o5
-;NaAs02
__.....
Na2HAs04
Ph3AsO*

. i-'J

~"

42.2
V ' 43.9
43.8
45.1

I*-T

r*3- *r 'if

44.2
'44.8

#46.0
Mi44-0
45.3

Ph2AsO(OH)*

44.1
44.2

?PhAsO(OH);*TpSJk45.0

* * *
a + hu

...
'

'Mi

KAsF9a)

1218.6
1214.0

>>

W1
RWJ
BWW
BWW

1263.0
1261.6

Ag
Ag*
Ag*

(D

BWW
BWW
BWW
BWW
BWW
BWW
... BWW
BWW
BWW
BWW
'

"

'

"

'W1

.V'i.BWW

,4:i:-,.:-i.

Ag*
AlAg,
Ag20
Ag20
AgO
Ag
.
AgO
Agl ;
AgOOCCFj

367.9
368.0
368.1
368.0

;, :
"

367.9
368.4
367.6
367.7

"

367.4
367.8
367.8
368.6
368.1
_ 367.7

m4n45n45

a 4- hu

358.1
358.4
358.2
357.8b)
358.0
358.0

726.0
726.4
726.3
725.8
725.9
726.4
724.5
724.5
724.0
724.8
723.5

356.9b|

356.8
356.8b|
357.4
;! 355.7

367.2
"

'7

> >

Ref.
O
W3
""

S2
GW .

355.3
354.4

355.3b|

723.9
722.5
723.0

FKW :

'

FKW_;
GW
S2
GW
S2
W1

'\:J

-:j

356.3b> -K-724.1

"AgF -''::r::;::rv;367.5 \355.5b>&723.0

Ag F2
'%Y'355.8b;-"722.9

W3
W3

_GW

GW

W1
W1
BWW
BWW

"bww"
bww
BWW
W1

Cadmium, Cd

"Omitted from plot because of crowding

a) Displayed at edge of chart at proper Auger parameter, although true point is off chart.
b) 6.0eV added to kinetic energy data on M,NN to obtain kinetic energy of M4N,5N line.
c) CdO believed hydrated.

CdSe
CdS

Cdl2
CdO

Cd(OH)2cl

CdF2
CdF2

Number

.. .
'

404.8
404.7
404.7
T 404.8
405.1
: 405.1
405.2
404.0
404.9
405.7

405.6

48
m4n45n45

3d5/2

Compound
Cd
Cd*
Cd*
CdTe

CD

Ag2S04
Ag2S04

'47
3d 5/,

Ag*

>**>>>>

Compound

Ref.

1263.4 ' iVBWW

1219.2 '#1263.0

44.4
47.6

Silver, Ag

1266.7
1267.6
1266.8
1266.8
1266.3
1266.3
1266.4
1265.8
1265.5
1265.8
1263.5
1264.1
1263.3
1263.4
1263.3
1263.8
263.6
:&1217.6
263.6
1219.6 :
""
1217.3
1262.6
1263.8
1219.7
1263.4
1219.2
"J218.6 "7'.'1263.6

4BuAsO(OH)2|
SP&44.9 i#1218.5
t(PioH21)2AsO(OH) 33$g?<t3.8
Me2AsO(OH)

33
l3m45m45

"42.9

~As4S4
Ph3As

>

3d

40.6
40.7
42.8
43.3
43.3
43.3

Aslj

_Ph,AsS

Number

383.9
383.9
384.2b)
382.7b)
381.7b)

"

"

"

Ref.

788.7
788.6
788.9
. 787.5
, 786.8

CD
W3
GW
GW
GW

4-786.5

...GW

786.5
786.5
785.1
""
784.8
. 784.6

GW
GW
W1
GW
W3

'

. ,_381.4b|

381.3b|
382.5b|
380.2
379. 1b)
379.0

a + hu

'

!
i

.
i

172

PHYSICAL ELECTRONICS

<<I<<4I<4<<<<<<<<<<<<<< <
Indium, In
In

In
In
InTe

In2Te3
InSe

In2Se3
InS

In2S3
Inl3
InBr3

InCI3
ln20
ln203
ln203

In ox '.7
In(OH)3 :

InF3
(NH4)3InFs

3d 5/2

M4N45N45

a + hu

443.6
444.0
443.6
444.1
444.3
444.8
444.6
444.3
444.5

410.6
410.6

854.2
854.6
854.5
853.5
853.4
853.0
853.1

_ ..
.

'

...

m4n45n45

492.4
491.7
492.0
498.7
573.7
Ph2Te2
498.4
575.6
PhTeI3
497.8
575.2
Ph2TeI2
497.8
575.1
Et2TeI2
497.8
575.4
Me2TeI2*
576.5 ; 497.5
TeBr4
497.0
"576.4
PhTeBr,
497.3
575.0
R*Br- a)
497.2
576.1
(FC6H4)TeBr3* .
496.8
575.8
MeCsH4TeBr2*
496.7
576.4
BuTeBr3*
496.9
576.0
Ph2TeBr2*
'}
:r
497.3
575.9
---'v
Te02
'V. 495.7
577.1
S-L'
Te03
576.5 ? ?: 495.7
Te(OH)6
576.9 "'496.5
Te ox*
496.5
576.6
Na2Te04
496.3
576.7
TeCI4
""
576.0
496.5
Ph2TeCI2
496.1
576.5
(p-MeOC6H4)TeCI3
498.9
Te tu2 Cl2
.. ... 574.1
496.8
576.1
Te tu tm CI*
497.0
576.3
(NH4)2TeCI*
496.8
575.9
(p-MeCaH4)TeOOH
572.7

Te
Te
Te

W3

LAK
W1
;
wi
;
409.1
i
W1
408.2
W1
408.5
W1
852.8
408.5
W3
852.0
407.5
"851.6 7 ;w3
"<.-"445.6 " 406.0
850.8 " W3
I
445.8
405.0
j
W3
850.5
405.9
444.6
W3
850.6
404.8
445.8
W3
851.1
407.0
444.1
851.6
LAK
406.9'
444.7
"'"444.1 -".5/406.6 sT?"850.7 i;W3 -P.]
'
445.3 .L'38 .406.4 .in*- ;851.7 - : -3W2
"
850.0
W1 j
405.2 .
444.8
"
"850.0
W3
"404.2
""445.8
W3
849.7
404.3
445.4
410.9

'409.4

3d s/j

Compound

Ref.

InCI

' '

'

Tellurium, Te *"52

49

Compound

<

573.2
572.9

**"

"

Ref.

1065.1
1064.9
1064.9
1062.4
1064.0
1062.9

W3
BWI
BWI
BWI
BWI

1062.9
1063.2
1064.0
1063.4
1062.3
1063.3
1062.6
1063.1

BWI
BWI

BWI
BWI
BWI . i
BWI i
BWI
BWI
BWI

"

1062.9

'1"1063.2 & TBWI

'

"

a + hu

:]

.. 1062.8 % v BWI ]
1062.2 .'TO rlBWI J
W3
1063.4
1063.1
W3
1063.0
BWI
BWI j
'1062.5

""

"

.1062.6
1063.0
1062.9
1063.3
1062.7

BWI J
!
BWI .. i
BWI
1

BWI
BWI

"Omitted Irom plot because of crowding

a) R =(PhTe Q )

CD
PERKIN-ELMER

173

))

> >>> > >

I

2. References for Line Energy Information

Line position data from the literature that are
presented with the elemental spectra in Section II
were obtained from the following references. The
references are listed according to the first letters
of the authors' names, to a maximum of three
authors. In cases of ambiguity, concluding

numbers have been used. An asterisk by a

reference indicates that it contains many data
that were not used in this Handbook. All data have
been charge referenced to a C1s binding energy
of 284.6 eV or a Au4f7/2 binding energy of 83.8 eV.

>

'

Ii

174

PHYSICAL ELECTRONICS

<<

l<

<<<< <<<<<<<<<<
A

AC1

AC2
AT1
AT2
B1
B2
B3
B4
"BAL
BC1
BC2
BC3

BC4
BCD
BCW

BDT
BF
BFM

BGD

A. Aoki, Japan J. App. Phys. 15, 305 (1976)

G. C. Allen, M. T. Curtis, A. J. Hooper, and P. M. Tucker, J. Chem. Soc.
(Dalton) 1973 1675
G. C. Allen, M. T. Curtis, A. J. Hooper, and P. M. Tucker, J. Chem. Soc.
(Dalton) 1974 1526
G. C. Allen and P. M. Tucker, Inorg. Chim. Acta, 16 41 (1976)
G. C. Allen and P. M. Tucker, J. Chem. Soc. (Dalton) 1973 470
T. L. Barr, Chem. Phys. Lett. 43, 89 (1976)
A. Barrie, Chem. Phys. Lett. 19, 1 (1973)
M. K. Bahl, J. Phys. Chem. Solids 36, 485 (1975)
H. Binder, 2. fur Naturforsch. B28 5, 256 (1973)
G. M. Bancroft, I. Adams, H. Lampe, and T. K. Sham, J. Elect.
Spectros. 9, 191 (1976)
M. Barber, J. A. Connor, M. F. Guest, M. B. Hall, I. H. Hillier, and W. N.
E. Meredith, J. Chem. Soc. Far. Disc. 54, 220 (1972)
M. Barber, J. A. Connor, M. F. Guest, I. H. Hillier, M. Schwarz, and M.
Stacey, J. Chem. Soc. Far. II, 69, 551 (1973)
M. Barber, J. A. Connor, I. H. Hillier, and W. N. E. Meredith, J. Elect.
Spectros. 1, 110 (1972)
T. Birchall, J. A. Connor, and I. H. Hillier, J. Chem. Soc. (Dalton) 1975
2003
M. Barber, J. A. Connor, L. M. R. Derrick, M. B. Hall, and I. H. Hillier, J.
Chem. Soc. Far. II, 69 559 (1973)
Y. Baer, P. H. Citrin, and G. K. Wertheim, Phys. Rev. Lett. 37, 51 (1976)
J. H. Burness, J. G. Dillard, and L. T. Taylor, J. Am. Chem. Soc. 97.
6080 (1975)
K. Burger and E. Fluck, Z. Anorg. Algem. Chem. 408, 304 (1974)
C. Battistoni, C. Furlani, G. Mattogno, and G. Tom, Inorg. Chim. Acta
21, L25 (1977)
J. P. Bonnelle, J. Grimblot, A. D. D'Huysser, J. Elect. Spectros. 7, 151
(1975)

BHH
BM
BMG

BNS
BP
BS
BWI

BWW
BZ
CAB
CDB

Y. Baer, P. F. Heden, J. Hedman, M. Klasson, C. Nordling, and K.

Siegbahn, Phys. Scr. 1, 55 (1970)
J. S. Brinen and J. E. McClure, Anal. Lett. 5, 737 (1972)
P. Baybutt, W. N. E. Meredith, M. F. Guest, V. R. Saunders, I. H.
Hillier, and J. A. Connor, Molec. Phys. 25, 1011 (1973)
J. R. Blackburn, R. Nordberg, F. Stevie, R. G. Albrldge, and M. M.
Jones, Inorg. Chem. 9. 2374 (1970)
P. Biloen and G. T. Pott, J. Catal. 30, 169 (1973)
A. Barrie and F. J. Street, J. Elect. Spectros. 7, 1 (1975)
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M. K. Bahl, R. D. Woodall, R. L. Watson, and K. J. Irgolic, J. Chem.
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Y. Baer and Ch. Zurcher, Phys. Rev. lett. 39, 956 (1977)
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10, 85 (1977)

<4<<<<I<<<<<
CDH

J. A. Connor, L. M. R. Derrick, and I. H. Hillier, J. Chem. Soc. Far. II 70

~'

941 (1974)

CE
"CEL
CFK
CG
CH1
CH2
CKA
CKM

CL
CR
CSC
CT
DKM

DR
ELC
EPC
F
FBW

FCF
FHP
FKW

FS
FUM
FWF
"GCH

*GHH
*GM
GSM

J. E. Castle and D. Epler, Proc. Roy. Soc. A339, 49 (1974)

J. Chatt, C. M. Elson, G. J. Leigh, and J. A. Connor, J. Chem. Soc.
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10, 349 (1977)

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C. J. Groenenboom, G. Sawatzky, H. J. deL. Meijer, and F. Jellinek, J.

Organometall. Chem. 7, C4, (1974)

"Many data not used

PERKIN-ELMER

175


GW
GZF
HB
HBB
HF1

HF2
"HHJ

HJG
HKM

HKN
HS
HW

HVB
HWV

IIK
IKI
JB

JHB

K
KBA
KBM

KD
KGW

KM
KI2
KL1

>>>>>>
S. W. Gaarenstroom and N. Winograd. J. Chem. Phys. 67, 3500 (1977)
P. A. Grutsch, M.V. Zeller, and T. P. Fehlner, Inorg, Chem. 12, 1432

KL2

(1973)
W. B. Hughes, and B. A. Baldwin, Inorg. Chem. 13, 1531 (1974)
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KNP

(1977)
R. Hoogewijs, L. Fiermans, and J. Vennik, J. Microsc. & Spectros.
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Phys. Rev. B8, 3583 (1973)

KOW
KPM
KSP

KW
KWD

LAK
LB
LBH
LFS
LHJ

LK
LKM
LMK

LPY
LR
MC
MD
MEC
MKL
ML
MMP

MMR
MRC
*MSA
MSC

MSV

*MTH

S. P. Kowalczyk, L. Ley, F. R. McFeely, R. A. Pollak, and D. A. Shirley,

Phys. Rev. B9, 381 (1974)
L. C. Kharitonova, V. I. Nefedov, L. N. Pankratova, and V. L. Pershin,
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G. Malmsten, I. Thoren, S. Hogberg, J. E. Bergmark, and S. E.

Karlsson; Phys. Scr. 3, 96 (1971)
Many data not used

176

PHYSICAL ELECTRONICS

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G. J. Leigh and W. Bremser, J. Chem. Soc. (Dalton) 1972 1217
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(1973)

.
J

<<<<<<<
MV
MVS
MW
MWI
MWJ

MWM
"MYG

MZ
*N
NAB

NB
NBA
*NBK
NBM

NGD
NH1
NH2
NKB

NKT
*NMS

NSB
NSC
"NSK

NSL
"NSM

NZM
OH
OHI
OW

I f

< <

W. E. Morgan and J. R. Van Wazer, J. Phys. Chem. 77, 96 (1973)

W. E. Morgan, J. R. Van Wazer, and W. J. Stec, J. Am. Chem. Soc. 95,
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V. I. Nefedov. I. B. Baranowskii, A. K. Molodkin, and V. 0. Omuralieva,
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M. Oku, and K. Hirokawa, J. Elect. Spectros. 8, 475 (1976)
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J. L. Ogilvie and A. Wolberg, Appl. Spec. 26, 402 (1972)

< <

i 1

1 1 1 t

<

OYK

T. Ohta, M. Yamada, and H. Kuroda, Bull. Chem: Soc. Japan, 47, 1158

PCL

T. A. Patterson, J. C. Carver, D. E. Leyden, and D. M. Hercules, J.

Phys. Chem. 80, 1702 (1976)
S. Pignataro, A. Foffani, and G. Distefano, Chem. Phys. Lett. 20, 351

(1974)

PFD
*PHH

PJH

PLB
PMD

PNS
*R
RBO
RH1

RH2

RR
RWJ
S1
S2
S3
S4
SA
SDI
SF
SFS
SGC
SGR
*SMA

SMB

SNF

(1973)
M. Pelavin. D. N. Hendrickson. J. M. Hollander, and W. L. Jolly, J.
Phys. Chem. 74, 1116 (1970)
A. Platau, L. I. Johansson, A. L. Hagstrom, S. E. Karlsson, and S. B.
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W. M. Riggs, Anal. Chem. 44, 830 (1972)
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K. Siegbahn, C. Nordling, A. Fahlmann, R. Nordberg, K. Hamrin, J.

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Studied by Means of Electron Spectroscopy," Almqvist and Wiksells,
Uppsala, 1967

'Many data not used

PERKIN-ELMER

177

>>))>>>
SPB

SRH
STA
*STH

T
*TRL

TT
V
VLD
VRP
VWV

178

D. Simon, C. Perrin, and P. Baillif, C. R. Acad. Sci. Paris C241, 283

(1976)
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PHYSICAL ELECTRONICS

W1
W2
W3

WHP
WM

>>>>>>>>>>>
C. D. Wagner, Shell Development Company unpublished data.
C. D. Wagner, J. Chem. Soc. Far. Disc. 60, 306 (1975)
C. D. Wagner, Chapter 7, Handbook of X-Ray and Ultra-Violet
Photoelectron Spectroscopy, D. Briggs, editor, Heyden & Sons,
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A. Westerhof and H. J. deL. Meijer, J. Organometal. Chem. 1_44, 61
(1978)

WSP

*YN1

YN2

ZH

U. Weser, G. Sokolowski, and W. Pilz, J. Elect. Spectros. 10, 429 (1977)

K. B. Yatsimirskii, V. V. Nemoshkalenko, Yu. P. Nazarenko, V. G.
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1374 (1974)
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Aleshin, V. V. Zhilinskaya, and N. A. Tomashevsky, J. Elect. Spectros.
1_0, 239 (1977)
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"Many data not used

((((((

i f f f

(<(<<(<<<<<(<<

III. appendix

<<<<<<<<<<<<<<<<<<<<< <<<<<<<<<
The tables presented in this section of the Hand
book greatly facilitate the interpretation of ESCA
data. Table 5, a compilation of relative elemental
sensitivity factors for the various elements based
on peak areas, will assist in data quantification. A
brief description is included with the table. Tables
1 through 4. compilations of photoelectron and
Auger line energies, are essential to the inter
pretation of the ESCA spectrum itself.
The first two tables are comprehensive listings of
line positions on a binding energy scale for all of
the lines of the various elements that can be
generated by MgKo and AlKa photons. All of the
core photoelectron lines with a binding energy
greater than 10 eV plus most of the Auger lines
with the intensity and sharpness to be observable
are included. (Additional small Auger lines,
displayed in differentiated form, can be found in
the Handbook of Auger Electron Spectroscopy,
also published by Physical Electronics.
The energies of the strongest photoelectron lines
in Tables 1 and 2 indicate the center of the range
of energies exhibited by the various chemical
states of each element, with certain exceptions:
1) the elemental state was not included in the
range for alkali and alkaline earth metals, 2) the
oxygenated halogen anions were not included in
the range for the halogens, and 3) the data for the
rare gases are for implanted rare gas ions in
metals. The reason for 1) and 2) is that the values
otherwise shown would be between extremes and
would be characteristic of no chemical state at
all. With these exceptions, the ranges shown en
compass data on all chemical forms. These data
are derived from the literature and from the ex
perience of the authors.

After the appropriate center value for the strong

photoelectron line was chosen, the values for the
other lines were calculated utilizing averaged line
difference data from the literature and from our
laboratory. The same was done independently for
the Auger line ranges and energies. Almost all of
the line energies were calculable from those ex
perimental data. Some interpolations were
necessary for 3s and 4s lines. For some of the
minor lines of the heavier elements, the line sep
arations in the original table by Siegbahn, et al.*,
were used. Because of the large number of
references used, they are not enumerated here,
except for the extremely helpful and extensive ar
ticle by Jorgensen and Berthou* which supplied
many of the data on the line separations that were
difficult to obtain elsewhere.

Tables 3 and 4 are designed to facilitate the iden

tification of unknown lines in the spectrum. Lines
from elements that do not occur naturally are not
included in these tables. Otherwise, Tables 3 and
4 are based upon the data in Tables 1 and 2. How
ever, they include only one Auger line per ele
ment, and two photoelectron lines which are not
both members of one spin doublet. The lines are
the most intense and sharpest in the spectrum
those most likely to be detected when the ele
ment is present in trace amounts. In the case of a
spin doublet, the number following a line designa
tion indicates the energy interval, to higher bin
ding energy, where the less intense member of
the spin doublet should be found. (This was not
done, however, for 4p doublets because of the
variability and low intensity of the 4p1/2 line nor for
the 4d lines of some rare earths where complex
processes make the character of the doublet
variable with chemical state.)
Refer to Section II. 2 (p. 174) for references (SNF and JB).

HDprrDK'lM-cri

* * c=m

1Q1

>>>>>>>>

>>>)>>>>> t

Table 1. Line Positions11' from Mg X-rays, by Element

Element

Atomic

Range

No.

(eV)

Photoelectron Lines
2s

1s

2pt

2p3

3pt

3s

3p3

3d3

3d 5

4p>

Auger Lines

Range
(eV)

4p3

KL,L,

KL,L

KLjjLjj

LjMM45

L3Mj3M4j

56
113
191
287

a
12
9
4

6
*

0
2
2

12

402
531
686

23
30

063

41

1072

'

119
153

491

332

51

l_,

1031

102T

133

.191 .134

779
645

31

64

901

6
.

8
0

10
14

14

LjM23M" LaMnM'
8

270

0
1

319

166
201
243

229

11

378 "296

"2
.U.6

439 350
J. 501 _407
565 464
630
523

6
6

698
-c:-r,T "770
V-

847

927
1009
1Q9S
1196

~2"
4;-

'

458

62

515
577
586
'
'652 641
723
710

69
77

796

781

873
95.4"

855

1045

'83

40

46
49

1022

45
43

"

10

.128

124

148

232

256

169
189

.143. .45

287

216

-!

"v-ifT

a) Lines enclosed in boxes

,322 247
>

358
- -395

280
313

431

345

163

182

"

*"CTf \T ' !

""715

-. 604-

659

,-x

548

597
542

541
476

486

479

408

429
368

422
361
297.

343
275
205

;1~,305

Vl-*

57
69

70
89
88
111; 110'
269 135' 133'
301 .160: 158; 45j&%;jj;V25
331 '183 181 51 :tT .29
208

238

.Vv*

&

/OCZ-i

are the most intense and are the most suitable lor use ol line energies in identifying chemical states.

c) Includes KVV designation when

L23 is not a core level.

e) Includes LVV when M levels are not in core, and MVV when N levels are not in core.
f) No simple 4p1/2 line exists for this group of elements.
g) The 4d doublet for these elements is complex and is variable with chemical state because of multiple! splitting and multielectron processes.

182

PHYSICAL ELECTRONICS

&:?

ssyvisite.

22' 3d5 equals 3d5,2, etc.

d) Designation is oversimplified.

620
553

7
5

;; 10

32
58

. . 766
"7"

"20

207

7"1 .

fjy' rrr*5?r.rr~nvs -rtv.v

.-,184

-J

10

,56
55
103 "63 . 61 ,
69
112
67
124
79
77
140
92
89
160" "108 "105

"1144 1117
v

b) For' brevity, 2p3 equals

.:_3137

93

934

LjM0Mi5" l2m4Sm<5

17
25

44

.402 ..53 .

17
17
22
33

165
199
241
293
347

LjM23Ms

-J-

: jt

483
410
396
""

-'"*

329
257 -T

184

.... 1fig __
337
265

113

468
393

317
242
"".""162

.82

...
.

... J....,

< <

Element

"

<<<<<<

Photoelectron Lines2'

No.

Range
(eV)

3s

3pt

3p,

3d,

3d,

470

379

364

209

206

413

396
425
463
498
534
573
618
666

233
257

230

65

253
282
309
337
368
405
445

68
77
83

Atomic

Nb

41

Mo

42
43

Tc

Flu

44

Rb

45
46
47

Cd

48

508
544
587
629
673
718
772

In
Sn
Sb
Te

49
50

828

Pd
Ag

I
Xe

Cs

. "Ba

.'...Ce
Pr

Nd

Pm

ii.Gd
Tb

445
485
522

561
604
652

286
314

.342
374
412

884

704
757

51
52
53
54

946

814

1009

873

-768
822

6
4

1071

930

874

1144

2
2

936
997
1062
1126

685

55

997
1064
1137

1184

900
950

453

715

494
539
585
630
738

795
851
1001

..-r'

63
64

1060

486

530

575

1186

Dy

66

67

'

-,

68

rwTm

..

69

71

Hf

72
73
74
75

Ta

pw

A Re

'

"70 "

Lu

VI

-V*'

-3--/
.

"

'Os :

..76...

Ir

77

r"6
6

451
470

594
628
657

.3_y".

5pi

5d,

5pi

6s

5ds

6p,

Range
(eV)

6p,

49"

540

91"
105"

114"
123"
141"
158

179
195
207

378

7 392

'

412

26
35
14
52

65
77

92
104
112

25
34
43
50
63
75
90
101
.108

,.

..

114>

227

120)

38

242
250
261
270
284
293
306
320 ~

129

38

132
136

41
34

333'-'.

342
359
382
403
425
449

141
150

154
161

169
180

... - - ..36

..

194] 1851
|

207

224

42

'

10

.775

1 197

55

58
64

748
724

24

'73721

r"

Pt
Au
Hg
Tl

,.Pb
Bi
Th
U

"T/Np
Pu

"TT'7'Am

Cm
Bk

CI

78
79
*

80

81
82
83

3
"

"2
2
3
4

90

92
93

94

'"*95 "
96
97
98

"*"*

"

"

313
333

643

497
521
547

681

577

721

608
645

379
406
435

692
726
763

579
610

803

845
893
942

762

307
1168

354

297
316
336
359
385
413
443

65
76
89

62
73
85
104" 100
122 118
143 138

77*

: :t;
.

"

p.'.'i-'r

"

vi..
'

..

"

. -w.

28

481
440

.2

.
-

105
110

25

".33

362

.V-

.v \ir.:+

27

34
37
45

30
37

-C''

65
69
75

'V:WM';W5

x-\

206

101

850

216

105

883 832
919
958

865
901

994 933

439
463
487
514
541

427

449
473
498

523

351

n9o45o45 n67o45v

1192
1184

54
57

1121

802

i
1

53

1086

681

*-*

226

'84 '
137 100
148 107
467
164 159 161 120
714 677 344 335 290 226
781 739 391 380 325 262
816 771 414 402

968
1046

"

402

26
20

.86 .,60."48

127

"

555

77.'." 7-!*

71
77 ~ "47 7*37
81 .'44 -,'33

98

657

519

23
22
20

. . . ...

.....
.. _

20

684
'

...!

632
594

N;04S045
4

846

819
794
765
737
711

598

'54 ";32 '26 . -

17
19
213
241 229
25
27
257
"'34
245
"36
491
277 263 45 43
521
549 ..,.475 .. .294 279 55. J52
437
464

897
872

"671
17
18

"*. 61
. 7 '?-

928

903
889
853
827
803

63
51

954

24
23
34
37
38

218

1025
1002
979

5
7
7
14
16
19
'

M4N4SN4S0>

1056
1C33
1008
981

11
19

79"

'

Auger Lines

M45N23V M5N,5N<se'
1068
;0t/

58''
68''

""362

1088
45')

88
97
109
123
137
155
171

483
507
537
566

">

""

5s

4f f

39

186

1034

45

4dn 4d5

35
38

59

209
230
170
192
254
274 210
290 222
305 237
318 248
337 264
349 ""283
366 '289
380 '.301
398 317
412 329
345
431

1083
1166 1136

4p,

4p i

619

1110

4s

672
724
780
834
882
930
980

65

Ho

/>Yb

61
62

*7-'-'Sm

-77-Er

56
57
58
59
60

La

I( ( { ( ( If
I

76

15

84
94

22
29

1169

13
19

94

87

104

96

"216 119 109

'113
232
120

124

1159
1151

1162
1155

26

179

197

246

1173

1176

65

43

26

46

29

..
"

'

18
19
18

29
18
31
31 "18
18
32
34
18
19
35

1100

"1064

1005
970

>>>>>>>>>>>)>>>>>)>>>>>>>>>)>>

Table 2. Line
Element

Atomic

Photooloctron Linos

Rango

No.

3s

3pi

3p}

3d

Auger Lines

Range

4P.

<Pj

(eV)

KLiLt

12
10
8

1012

KLi Li3

KLLCI

Li
Be

..

Positions3' from Al X-rays, by Element

6
7
8

N
O
F
Ne
Na
Mg
Al
Si

9
10
11
12

878

. 997
859
701
536

724
565
384

"i

350

13

,1

14

... P

15

LjMj.M,,"

L2M33M,.
3p

'

16
17
18
19

1336
1304

1270
1238

"

20

1197

--21

--8

23

22

" ',6
:L;.7

Si

7
5
7

"T77
1250

10
A. 11

li.33
34

_ ......
...

1055
1000
948 * V?

775
712
655

781

719
662

'601

lp

21

";if "903

830..

.837

.....

1125
1072
1017
962

1106

.... 6~

24

27

1153

10

725*.v-26 ?
-'

-.J268
'.--1236
:rii94

L:M,sM15

715
649

585

-L,:>-517 i:
. . -i." *594
:
.'.
"

.538 i;

ti V.

530

>r448
376

300

35
36

?'37

"

'

358

238 7111
301 -.160
331 .183

i40

Irt4 A.tf.Z-j:-

y&Vrr.

t-

a) Lines enclosed in boxes are the most intense and are the most suitable (or use of line energies in identifying chemical slates.
b) For brevity, 2p3 equals 2q2' 3cI5 equals Od. etc.

c) Includes KVV designation when

d) Designation is oversimplified.

L23 is not a core level.

e) Includes LVV when M levels are not in core, and MVV when N levels are not in core.
I) No simple 4p1/2 line exists for this group of elements.
g) The 4d doublet for these elements is complex and is variable with chemical state because of multiplet splitting and multielectron processes.
h) Often observable, induced by bremsstrahlung.

184

PHYSICAL ELECTRONICS

((

1 t

<

Element

Atomic
No.

Range
(eV)

3s

3p,

3pj

3d,

3d,

41

379

364

209

413
445
485
522

396
425

233
257

463

286
314

206
230
253
282
309

342
374
412
453
494

337
368
405
445
486

539
585
630
685
738

530
575
619
672
724

795

780

851
900
950
1299 1001
1060
1110
1166
1219

834

42
43

470
508
544

Ru
Rh

44

587

. Pd

46
47
48

629
673

Nb
Mo
Tc

45

Ag
Cd

In
; Sn
. Sb
Te

'

'

Ba
La
Ce

2
3
3
4

49
50

.5
6

"

59
60

Pm

61

'v Eu
Gd

62
63
64
65

V Sm

..
i_

Tb
Dy
"

"

69

70
71
72
73

Lu
Hf

Ta

.'

>." '

. r' "V
"i*

>. /*'-

5p,

5p,

5d,

5d,

6s

(eV)

6p3

6Pi

19
26

25

35

34
43

171

1141

186
209
230

123!

52

50

141

65
77

63

170
192
210
222
237
248
264

305

158

179

92
104
112

366
380

398
412
431

329
345

378 -333

483
507
537
566

392 ,>342
359
412
382
437
403
464

362

75
90

1200>

38
'

136
141

161
169

,194

17

.18

'41

-*20

m4n45n15 m4Sn4Sv M,VV m4vv

-24
21
28
*26
20
"25

'

61

1 J21

54 ~ *32
55 _.33
58
34
37
64
45
71
77 -'A7

1161

917
890

77

Pt
Au

78

S*V-TI
~vj;Pb
Th
U

92

Bi

-* P"

94
95
96

97
98

'A.'*

Jj _

"

"

r';?yVv

7SS.

'

. -
* * *7

579

497

313 297

65

333 316
521
76
726 610
354 336 89
763 643
547
803 681 T.7577 -* "379 "359 7.104
'
406 385 122
845 _72i
608
435 413 .143
893 v-762 S"645
942
681 "*467 443 164
807
714 677 344
968
1330 1168
781 739 391
1274 1046
-816
771 "41*4*
1327 1086
;.1121850
802 439
'883 832 "463
919 "865' "487
958 901 514
994 933 541

*>* T

.3 *"*'

"*93

TC27'
2

81

82
83
90

Cm
Bk
Cf

"80':"

692

79

...

.f'r.Pu
XlV-Am

62
73
85

98

65

105

69

110

75

' .v..

26

A'

"7* -Tp-

--T-

'

-WV.

30

37

37--T

...;

"

*V 1

427

473'
498

523

19
26
87
96

.
Jvj.

43

":0

26
29

46

120

34
35

124

375

-yrrp

- 325
273

235

155

195
142
f

'

100
T 58 *!

93

.*

>

" ""

- ~v

-X

-p'iTi*rv.-

"j

31 >;>18

""32

a-1409

18
19

18
18

.77;.'

'

'

j-

N bO*sO5

;i'
f -

N9;045V

1425
1417

--

.1395
'1388

:>7.18 T

j,..; _J

L-

31 718 V

*c

7.

*"7;7.

-yjrrr-~*29

246

265

T:, ".;*

- --206 77 " '7101

, iv 216 > >105
-fir
'
216 '-119 >109
"113
232

351

426

490
454

VT *"

7 j

' ."

u'iilwj

p-j'.V

7'7'' ' :-

r -~

635
595
568
527

53
54
57

138 148:"107." 84 j." 22

159 161 *120" ~94 "29 "*"
94
335 290 226 179
380 325_ 262 197 104

449

752

.100 127 .5r84**",65"77r"~**7?:."

76 ' ' 15 ii13
118 137 "100

'402

i
**

714
673

n7o45o *5
Ir

970

944

* r-*

27

1079
1052

1027
998

788

''44 33"'* . '! .86..v60l.48__ 7

81

1130
1105

865
827

'26 ''vU.'

1136
1112
1086
1060
1036
1008
981
957
931
904

. .

20
23
22

36
42
63
51

180
185
,77-....
207 [ 197
224 213
19
17
241 229
27
25
."594 "491 *'.'7425 :257 "245 "736" ~34
628 .521 .449 '277 - 263 .'45' '43
657 --549 - -475 :;294 279 .55 752

1235
1212

34

150
154

38

129

"132

293
306
.320

.451
470

1258

5
7
7
10
6

14

16
19
24
23
34
37
38

101
108
1148'

227
242
"283 **250
:289 261
270
301
284
317

318
337
349

44

195
207
218

4
4

79')

1289
1266
1241
1214
1187

11

Auger Linos

M<sN23V M,NsN
1301
1280

68"

91n
105"

254
274
290

1321

58 1

<

1 1

Range

5s

451
49
541

123
137
155

Photoelectron Lines
4d r 4ds
4'j 41,

39

68
77
83
88
97
109

..

jiJ.

65

1136

4pi

35
38

59

882
930
980
1034
1083

--

4Pi

4s

1186
1279 1244
1334 1295

75
,._76

'

TT6 T

74
'Os

JL

68

2Yb..

i> - :Re

. -Y :

66
67

Ho
gf Er * 'V

Tm

534
573
618
666

715
768
822
930
874
936
1144 997
997
1216 1064
1292 1137 1062
1207 1126
1271 1184
1337 1242

"'2

498

561
604
652
704
757
814
873

718
772
828
884
946
1009
1071

58

Pr
Nd

ti

51
52
53
54
55
56
57

I
Xe
Cs

<<<

i i i ( 1 1

1 t

1 ({ i t

{'Xj

1406

" '

*T

... r 1384

1392

1333
*

v7

-7*.

""

1238

1297

"

1402

1203
*

'

;y-'tyi

-/

> 1

19

PERKIN-ELMER

185

> >> > >)

Table 3. Line Positions from Mg X-rays, in Numerical Order

>>>

17
23
25
30
31
34
40
41
43
44
45
48
50
51
52
55
56
57
61
62
63
64
67
69
73
74

ill

if

ji.

f!

Hf 4f7

(2)

0 2s

Ta4f7
F 2s
Ge 3d5

W4f7

(2)
(1)
(2)

Cr3pa
Mn3p3

I4d5

(2)
(1)
(1)
(1)
(2)

Mg 2p

Os4f7
Fe3p3
Li 1s

(3)
(1)

Ir 4f7

(1)
(2)
(3)

Xe4d5

(2)

Se3ds
Co3p3

Na 2s
Ni3p3

Br3d5
Pt 4f 7
Al 2p

Si 2p3
Ga3p3

Ce4d5
Rb3ds

(1)
(3)
(4)
(1)

Be 1s
Ge (A)

114 Pr 4d

V 3p
Ne 2s

Re4f7
As3ds

102
105
108
110
113
113

(2)
(1)
(3)

75 Cs4d5
77 Cu3p3

(2)
(2)

85 Au4f7
87 Zn3p3
88 Kr3d5
90 Ba4d5
90 Mg 2s
100 Hg 4f7
101 La4d5

(4)
(3)
(1)
(2)

(4)
(3)

118 Tl 4f7
119 Al 2s
120 Nd 4d
124 Ge 3p3
132 Sm 4d
133 P2p3

133 Sr3ds
136 Eu 4d
138 Pb4f7
143 As3p3
150 Tb 4d
153 Si 2s
154 Dy 4d
158 Y3d5
159 Bi 4f7
161 Ho 4d
163 Se3p3
165 S2p3
169 Er 4d
180 Tm 4d
181 Zr3d5
182 Br3p3
185 Yb4d5
189 Ga (A)
191
191
197
199

(4)

(4)
(1)
(2)
(5)
(5)

(2)
(5)

(6)
(1)

(2)
(7)
(9)

B 1s
P 2s

Lu 4d5
CI 2p3

(3)
206 Nb3ds
(8)
208 Kr3p3
(11)
213 Hf 4d5
229 S 2s
(12)
229 Ta4ds
(3)
230 Mo3d5
(9)
Rb3p3
.
238
(2)
241 Ar2p3
(12)
245 W4ds
263 Re4d5 (14)
264 Na (A)
265 Zn (A)
(11)
269 Sr3p3
270 CI 2s
279 Os4d5 (15)
(4)
282 Ru3d5
284 Tb 4p3 (33)
287 C 1s
293 Dy 4p3 (36)
(3)
293 K2p3
(16)
297 Ir 4ds
(12)
301 Y 3p3
306 Ho4p3 (39)
(5)
309 Rh3d5
(17)
316 Pt4d5

319 Ar 2s
320 Er4p3
331 Zr3p3
333 Tm 4p3
335 Th 4f7
336 Au4d5
337

Pd3d5

(42)
(14)
(45)
(9)
(18)
(5)

337 Cu (A)
(10)
(2)

342 Yb 4p3
347 Ca2p3

(50)
(3)

359 Lu 4p3
359 Hg 4d5
362' Gd (A)
364 Nb3p3
368 Ag3ds
378 K 2s
380 U 4f7
385 Tl 4d5
396 Mo3p3
402 N 1s
402 Eu (A)
402 Sc2p3
405 Cd 3d5
410 Ni (A)
413 Pb4d5
435 Ne (A)
439 Ca 2s
440 Sm (A)
443 Bi4d5
445 In3ds
458 Ti 2p3
463 Ru3p3
483 Co (A)
486 Sn3d5
498 Rh3p3
501 Sc 2s
515 V 2p3
519 Nd (A)
530 Sb3ds
531 O 1s
534 Pd3p3
553 Fe (A)
555 Pr (A)
565 Ti 2s
573 Ag 3p3

(53)
(20)
(15)
(6)

(11)
(21)
(17)

(5)
(7)
(22)

(24)
(8)
(6)
(22)
(8)
(24)
(8)
(9)
(27)

(31)

575 Te3ds
577 Cr2p3
594 Ce (A)
599 F (A)
618 Cd3p3
619 1 3d5
632 La (A)
641 Mn2p3
657 Ba (A)
666 !n3p3
670 Mn (A)
672 Xe3ds
677 Th4d5
684 Cs (A)
686 F 1s
710 Fe2p3
711 Xe (A)
715 Sit 3p3
724 Cs3d5
729 Cr (A)
737 1 (A)

(10)
(9)

863
872
875
882

(34)

897 Ag (A)
920 Sc (A)
928 Pd (A)

739 U4d5
743 O (A)
765 Te (A)

(42)

768 Sb3p3
780 Ba3d5
781 Co2p3
784 V (A)
794 Sb (A)
819 Sn (A)
822 Te3p3
834 La3d5
839 Ti (A)
846 In (A)
855 Ni 2p3

(11)
(11)
(38)

(13)
(37)

930
934
954
961
970
980

Ne 1s
Cd (A)
N (A)

Ce3ds

Pr3d5
Cu2p3
Rh (A)
Ca (A)
U (A)

186

PHYSICAL ELECTRONICS

(20)
(20)

Nd3d5

(21)

981
993
1003
1005
1022
1035
1071
1072
1082
1083
1088

Ru (A)
C (A)
K (A)
Th (A)
Zn2p3
Ar (A)
CI (A)
Na 1s
B (A)

(23)

(46)
(15)
(15)

Nb (A)
1103 S (A)
1117 Ga2p3 (27)
1136 Eu3d5 (30)
1155 Bi (A)

(51)
(17)

1162
1169
1176
1184
1186
1192

Pb (A)
Tl (A)
Hg (A)
Au (A)
Gd 3d5 (33)
Pt (A)

(13)
(42)

(14)

Sm3d5 (27)

(18)

An A in parentheses denotes Auger line. Numbers in parentheses are spin doublet separations in electron volts. The sharpest Auger line and the two most intense
photoelectron lines per element are included in the table. For brevity, 2p3 equals 2p3)2, 3d5 equals 3d5/2, etc.

rI

(18)

Table 4. Line Positions from Al X-rays, in Numerical Order

17
23
25
30
34

H f 4f 7
0 2s

(2)

Ta4f7

(2)

F 2s

W4f7

(2)

40 V 3p
41 Ne2s

43
44
45
48
50
52
55
56
57
61
62

Re4f7
As3d5
Cr3p3
Mn3p3
I4ds

Os4f7
Fe3p3
Li 1s

(2)
(1)
(1)
(1)
(2)
(3)
(1)

Ir 4f7

(1)
(2)
(3)

63

Xe4d5

(2)

64
67
69
73
74
75
77
85
87
88
90
90

Na 2s
Ni 3p3

Se3ds
Co3p3

Br3d5
Pt4f7
Al 2p

Cs4d5
Cu3p3

Au4f7
Zn3p3

Kr3d5
Ba4d5

Mg 2s
99 Er (A)
100 Hg 4f7
101 La4d5
102 Si 2p3
105 Ga3pj

108

(2)
(1)
(3)

Ce4d5

(2)
(2)
(4)
(3)
(1)
(2)

(4)
(3)
(1)
(3)
(4)

110
113
114
118
119
120
124
132
133
133
136
138
141
142
150
153
154
158
159
161
163
165
169
180

181
182
184
185
191
191

Rb3d5

(1)

Be 1s
Pr4d

TI4f7
Al 2s
Nd 4d
Ge3p3
Sm 4d
P2pj

Sr3d5

(4)

(4)
(1)
(2)

Eu 4d

Pb4f7

(5)

Gd 4d
Ho (A)
Tb 4d
Si 2s
Dy4d

Y3ds
Bi 4f7
Ho 4d
Se3p3
S2p3
Er 4d
Tm 4d

Zr3d5
Br3p3
Se (A)

Yb4d5

B 1s
P 2s
195 Dy (A)
197 Lu4d5
199 CI 2p3
206 Nb3d5
208 Kr3p3
213 Hf4d5
229 S 2s

(2)
(5)
(6)
(1)

(2)
(7)
(9)

(10)
(2)
(3)
(8)
(9).

229 Ta4d5
230 Mo3d5
223 n;-, T, ,
241
245
263
265
266
269
270
279
282
287
293
297
301
305
306
309
316
319
320
331
333

335
336
337
342
346
347
359
359
364
368
378
380

Ar2p3

W4d5
Re4d5
Tb (A)
As (A)
Sr3p3
CI 2s

Os4d5
Ru3ds
C 1s
K2p3
Ir 4ds
Y3p3

(12)
(3)
V~>/

(2)
(12)
(14)

(11)
(15)
(4)

(3)
(16)
(12)

Mg (A)
Ho4p3 (39)
(5)
Rh3ds
Pt4ds (17)
Ar2s
(42)
Er 4p3
(14)
Zr3p3
Tm 4p3 (45)
(9)
Th4f7
(18)
Au4d5
(5)
Pd 3d5
Yb 4p3 (50)
Ge (A)
(3)
Ca2p3
Lu 4p3 (53)
Hg4d5 (20)
Nb3p3 (15)
(6)
Ag 3d5
K 2s
(11)
U4f7

385 TI4d5
396 Mo?p3
402 N 1s
402 Sc2p3
405
413

422
439
443
445
458
463
486
497
498
498
501
515
530
531
534
565
570
573

Cd3ds
Pb4d5

(21)
i /

(5)
(7)
(22)

Ga (A)

Ca 2s
Bi 4ds

In3d5
Ti 2p3
Ru3p3

Sn3d5

(24)
(8)

(6)
(22)
(8)

Na (A)
Zn (A)
Rh3p3 (24)
Sc 2s
V2p3

Sb3d5
0 1s
Pd3p3
Ti 2s
Cu (A)
Ag3p3

(8)
(9)

(27)

677
686
710
715
716

(37)
Th -d5
F 1s
Fe2p3 (13)
Sn3p3 (42)
Co (A)

1072
1072
1079
1083
1105

724
739

Cs3d5
U4ds

(14)
(42)

752
768
780
731
786
788
822
827
832
834
855
863
865
882

Nd (A)
Sb3p3 (46)
Ba3ds (15)
uo 2p3 (15)
Fe (A)
Pr (A)
(51)
Te3p3
Ce (A)
F (A)
La3d5 (17)
(18)
Ni 2p3
Ne 1s
La (A)
Ce3ds (18)
Ba (A)
Mn (A)
Cs (A)
Pr3d5 (20)
Cu 2p3 (20)
Xe (A)
Cr (A)
I (A)
O (A)
Nd3d5 (21)
Te (A)

1108
1117
1130
1136

890
903
(31)
(10)
(9)

917

930
934
944
962
970
976

575
577
595
618
619

Te3ds

I3ds
635 Eu (A)

(11)

641
643
666
668
672
673

Mn2p3
Ni (A)
In3p3
Ne (A)

(11)
(38)

1017 V (A)

Xe3d5

(13)

1022 Zn2p3
1027 Sb (A)
1052 Sn (A)

Cr2p3
Gd (A)
Cd3p3

Sm (A)

(34)

980
998

(23)

1153
1161
1186
1187
1194
1205

Na 1s
Ti (A)
In (A)

Sm3ds (27)
Cd (A)
N (A)
Ga2p3
Ag (A)

Eu3ds

(27)

(30)

Sc (A)
Pd (A)

Gd3d5

(33)

Rh (A)
Ca (A)
U (A)
1214 Ru (A)
1219 Ge2p3

(31)

1226 C (A)
1230 Th (A)
1236 K (A)

1244
1268
1295
1301
1304
1305
1315
1321
1326
1336
1388
1395
1402
1409
1417
1425

Tb 3d5
Ar (A)

(35)

Dy3d5

(39)

Mo (A)
CI (A)
Mg 1s
B (A)
Nb (A)
As2p3
S (A)
Bi (A)
Pb (A)
TI (A)
Hg (A)
Au (A)
Pt (A)

An A in parentheses denotes Auger line. Numbers in parentheses are spin doublet separations in electron volts. The sharpest Auger line and the two most intense
photoelectron lines per element are included in the table. For brevity, 2p3 equals 2p3,2, 3d5 equals Sd, etc.

PEBKIN-ELMER

187

>>>

>>>>>*>>>>>>)>>>>>

Table 5. Atomic Sensitivity Factors (ASF)

II 1.00. This table is based upon caicu ! ated cross-sections corrected for the kinetic energy dependence of the spectrometer
detection efficiency and an average value for the dependence of A
on kinetic energy (of section I.5.D). The values are only valid for,
and should only be applied, when the electron energy analyzer us-

CO u.

ASF

Element

3
4
5
6
7
8
9
10
11

Li
Be
B
C
N
0
F
Ne
Na
Na
Mg
Mg
Al
Si
P
S
CI
Ar
K
Ca
Sc
Ti
V
Cr
Mn
Fe

12
13
14
15
16
17
18
19
20
21
22
23
24
25
26

Line

1s
1s
1s
1s
1s
1s
1s
1s
1s
1s
1s
2p

2P
2p
2p
2p
2p
2 P3/2

2P3/2
2P3T2
2P3J2
2Par2
2 Pa/2
2 P3/2

ed has the transmission characteristics of the double-pass"

cylind 'ical-mirror type analyzer supplied by Physical Electronics.
Data are for Mg x-rays except for those in parentheses that are
calculated for Al x-rays. Otherwise, the atomic sensitivity factors
for Mg and Al agree within ten percent.
ASF

ASF

Element

Line

(Area)

.012

27

.039
.088
.205
.38
.63

28
29
30
31

Co
Ni
Cu
Zn
Ga

2pa>
2pal

4.5
5.4

2Pa/2

4.3
5.3
6.9

49
50
51
52
53
54
55
56
57

(Area)

1.00
1.54

32

Ge

2.51
(2.27)
(3.65)
.07
.11
.17
.25

.35
.48
.42
.55
.71
.90
1.1

2Pa;2

1.4
1.7
2.1

2pa)

3.8

2p3/2

2P3/2
2P3/2
2P3T2
2Pa/2
3d

33

34
35
36
37
38
39
40
41
42
43
44
45
46
47
48

As

Se
Br
Kr
Rb
Sr
Y
Zr
Nb
Mo
Tc
Ru
Rh
Pd
Ag
Cd

2P3/2
3d
3d
3d
3d
3d
3d
3d
3d5/2
3d5,2

3d5;2
3d5/2

3d5/2
3d5/2

3d5/2
3d5;2

3d5/2

(5.8)
9.2
(7.2)
.30
(9.1)
.38

.48
.59
.72
.88
1.05
1.25
.87

Elemenl

Element

65

Tba|

66

Dya)
Hoa)

5.5
6.1

67
68
69
70

6.7

71

1.22

72

12.5
1.29
14.0
1.38
15.7
1.48
17.6
1.57
20.3
1.66
23.8
(20.2)
1.76
29.4
(22.6)
1.84

73
74
75
76
77
78
79
80
81
82
83
90
92

3d5/2
3d5/2
3d5/2

Te
I
Xe

3d5,2

2.85
3.2
3.55
4.0

3d5/2
3ds/2

4.4
4.9

Cs
Ba
La

3d5/2

3d5/2
3d5/2

58

Cea)

59

pra>

60

Nda)

61

Pma)

1.00
1.2

62

Sma)

1.35
1.55
1.75
2.0
2.25
2.55

63

Eu

64

Gda)

3d
4d
3d
4d
3d
4d
3d
4d
3d
4d
3d
3d
4d
3d
3d
4d

ASF

(Area)

In
Sn
Sb

4da)

a) Variable and complex pattern makes it usually desirable to measure areas of entire doublet region.

188

Line

Era>
Tma|
Yba)
Lua)

Hf
Ta
W
Re

Os
Ir
Pt
Au
Hg

TI
Pb

Bi
Th
U

Line

(Area)

3d
4d
3d
4d
4d
4d
4d
4d

(26.7)
1.93
(30.0)
2.03
2.12
2.19
2.28
2.36

4d

2.45
1.55

4f
4f
4f
Af 7/2
4f 7/2
tf 7/2

Af7/2
A'f 7/2

Af7/2

4(7/2
4(7/2
4(7/2
4(7/2

4f7/2

1.75
2.0
1.25
1.4
1.55
1.75
1.9
2.1
2.3
2.55
2.8
4.8
5.6

rf\

CD
)

PHYSICAL ELECTRONICS

>

Table 6. Periodic Table of the Elements

He

Li

Be

13

14

15

16

17

Si

CI

33

34

11

Ma
19

K
37

Rb
55

Cs
87

Fr

12

A!

Mg
20

Ca
38

Sr
56

Ba
88

Ra

21

Sc
39

Y
57

La

22

Ti

V
41

40

Zr

42

72

Ta

Pt

lr

Os

In
81

80

Hg

Au

Sb

Sn

Pb

TI

36

Kr
54

Xe

84

85

Po

Bi

Ar

53

Te

83

82

18

Br

52

51

Me

35

Se

As

50

49

Cd

79

78

Ge

Ga

48

Ag

32

31

Zn

47

Pd

77

30

Cu

46

Rh

76

Re

Mi

45

Ru

75

74

73

Hf

Tc

29

28

Co

44

43

Mo

Mb

Fe

Mn

Cr

27

26

25

24

23

10

86

Rn

At

89

Ac

58

Ce
90

Th

59

Pr
91

Pa

60

Md
92

61

Pm
93

Mp

62

Sm
94

Pu

63

Eu
95

Am

64

Gd
96

Cm

65

Tb
97

Bk

66

Dy
98

Cf

67

Ho
99

Es

68

Er
100

Fm

69

Tm
101

Md

70

Yb
102

Mo

71

Lu
103

Lw

I I >>>)

)>)>>

>>>>>)

Table 7. Alphabetical Index of the Spectra

ii

.('i

-1:
ril
!

I!'
! I 1

Name

Symbol

Aluminum
Antimony
Argon
Arsenic
Barium
Beryllium
Bismuth
Boron
Bromine
Cadmium
Calcium
Carbon
Cerium
Cesium
Chlorine
Chromium
Cobalt
Copper
Erbium
Fluorine
Gallium
Germanium
Gold
Hafnium
Indium
Iodine
Iridium
Iron
Lanthanum
Lead
Lithium
Magnesium
Manganese
Mercury

Al
Sb
Ar
As
Ba
Be
Bi
B
Br
Cd
Ca

Ml !

190

PHYSICAL ELECTRONICS

Ce
Cs
CI
Cr
Co

Cu
Er
F
Ga
Ge
Au
Hf
In
I
Ir
Fe
La
Pb
Li
Mg
Mn
Hg

Atomic
Number

13
51
18
33
56
4
83
5
35
48
20
6
58
55
17
24
27
29
68
9
31
32
79
72
49
53
77
26
57
82
3
12
25
80

Page

'

, 50

120
60
90
130
34
162
36
94
114
64

38
134
128
58

72
78
82
140
44
86
88
154
142
116
124
150
76
132
160
32
48
74
156

Name

Symbol

Molybdenum
Nickel
Niobium
Nitrogen
Oxygen

Mo

Palladium
Phosphorus
Platinum
Potassium
Rhenium
Rhodium
Ruthenium
Samarium

Scandium
Selenium
Silicon
Silver
Sodium
Strontium
Sulfur

Tantalum
Tellurium
Terbium
Thallium
Thorium
Tin
Titanium
Tungsten

Uranium
Vanadium
Xenon
Yttrium

Atomic
Number

42
28
41

Ni
Nb
N
O
Pd
P
Pt
K
Re
Rh
Ru
Sm
Sc
Se
Si
Ag
Na
Sr
S
Ta

Te
Tb
Tl
Th
Sn

Ti
W

Xe
Y

Zinc

Zn

Zirconium

Zr

7
8
46
15
78
19

75
45
44
62
21
34
14

'

47
11
38
16
73
52
65
81
90
50
22
74
92
23
54
39
30
40

Page

104
80
102
40

42
110
54
152
62
148
108
106
136
66
92

52
112
46
96
56
144
122
138
158
164
118
68
146

166
70
126
98
84
100