Topics for discussion

Temperature dependence of orientational

(dipolar) polarizability, d(T)=po2/3kT
How does frequency affect the Ionic
Polarization, i() ? (Lorentz Model)
Frequency dependence of Electronic
Polarization, e() ?
Comparison with f dependence of d(), i.e.
Debyes relation
Dielectric Mixtures & Heterogeneous Media
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

The frequency dependence of the real and imaginary parts of the dielectric constant in the
presence of interfacial, orientational, ionic, and, electronic polarization mechanisms.

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Piezoelectric transducers
|SOURCE: Photo by SOK

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

A pyroelectric detector based

on LiTaO3
|Courtesy of Molectron Detector Inc.

A 70 MHz pyroelectric detector

|Courtesy of Molectron Detector Inc.
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Dipolar Polarization: The Effect of Temperature

In the presence of an applied field a dipole tries to rotate to align with the field
against thermal agitation.

Q: Mean induced dipole moment while accounting for the

thermal energies and the random collisions among the dipoles?
Fig 7.54
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Torque
Prob. that the molecule has an energy E : exp( E / kT )
Torque experienced by dipole (po=aQ), = ( F sin ) a = Epo sin
Pot. Energy E at an angle is d

E = po E sin d = po E cos + po E
0

Fraction f of molecules oriented at exp(-E/kT) ~exp(poEcos/kT)

Considering the 3 D nature of dipole orientation, one
must use solid angles defined by d.
The whole sphere around the dipole corresponds to a
solid sphere of 4
Furthermore, we need to find the average dipole
moment along E (as it is net Fig
induced
due to E), pocos
7.54
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

The dipole is pointing within a solid angle d

From defn of average,

pav

Fig 7.55

( po cos ) fd

fd

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Average dipole moment

Dipole moment along E

pav

( po cos ) exp( po E cos / kT )d

exp( po E cos / kT )d
Boltzmann factor

Integration gives a Langevin function L(x)

pav = poL(x)
x = poE/kT
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

At large fields, L(x)1,

pav= po
At low fields, L(x) x/3,
2

x po E
pav = po =
3 3kT
2
1 po
d =
3 kT
(Dipolar or orientational
polarizability)
The Langevin function.
Fig 7.56
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Ionic Polarization & Dielectric Resonance

M r = M + M /( M + + M )
Consider a pair of oppositely charged ions. In the presence of an applied field E along x, the
Na+ and Cl- ions are displaced from each other by a distance x. The net average (or induced)
dipole moment is pi.

Polarizing force=QE Restoring force=Fr; Frictional force=dx/dt;

Ftotal = F + Fr + Floss

dx
d 2x
= QE x +
= Mr 2
dt
dt
Fig 7.57

=spring constant associated

with ionic bond, & = depend
on mech. of energy loss from E

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

d x
dx
Q
2
+ I
+ I x =
Eo exp( jt ) Soln,x=xoexp(jt)
2
dt
dt
Mr
Reduced mass

Applied field

Loss coefficient per unit reduced mass, I =/Mw

Resonant or natural vibrational frequency of the IONIC bond, I = (/Mr)1/2

Forced Oscillator Eqn. (damped motion of a ball attached to a spring in a viscous

medium) and is oscillated by field. Lorentz Oscillator Model
xo, pi=(Qxi), i=pi/E - all are complex, i.e., phase shifted w.r.t. E
2
pi Qx
Q2
Q
i = =
=
i (0) =

2
2
E
E M r ( I + j I )
M r I2

i ( ) =

i (0)

1
I

+ j I
I I

(/I)Normalized freq.

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

 i peaks at ~I

(i.e.,ionic bond resonant freq.)

Sharpness & peak-value

depend on loss factor

i ~ constant at I
Through , i shows rapid
change from + to -, & then it
0 for >>I
At =I, polarization lags
behind E by 90.

Resonant frequency (I) for ionic

polarization relaxation are typically in
IR range, i.e. 1012 Hz.
Fig 7.58

dP/dt & dE/dt in same phase,

leading to max E transfer
For I ,negligible coupling
Ionic poln relaxn peak, =I
(bcause of max. coupling)

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

(a) An ac field is applied to a dipolar medium. The polarization P(P = Np) is out of phase with
the ac field.
(b) The relative permittivity is a complex number with real (r') and imaginary (r'')
parts that exhibit frequency dependence.
Fig 7.13
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Debye Equations

[ r (0) 1]
r = 1 +
2
1 + ( )

[ r (0) 1]
r =
2
1 + ( )

r = dielectric constant (complex)

r = real part of the complex dielectric constant
r = imaginary part of the complex dielectric constant
= angular frequency of the applied field
= relaxation time
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Cole-Cole plots

Cole-Cole plot is a plot of r vs. r as a function of frequency, . As the

frequency is changed from low to high frequencies, the plot traces out a
circle if Debye equations are obeyed.
Fig 7.17
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

(a) Real and imaginary part is of the dielectric constant, r' and r'' versus frequency for (a) a
polymer, PET, at 115 C and (b) an ionic crystal, KCl, at room temperature.
both exhibit relaxation peaks but for different reasons.
SOURCE: Data for (a) from authors own experiments using a dielectric analyzer (DEA),
(b) from C. Smart, G.R. Wilkinson, A. M. Karo, and J.R. Hardy, International Conference on
lattice Dynamics, Copenhagen, 1963, as quoted by D. G. Martin, The Study of the Vibration
of Crystal Lattices by Far Infra-Red Spectroscopy, Advances in Physics, 14, no. 53-56, 1965,
pp. 39-100.
Fig 7.16
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

The frequency dependence of the real and imaginary parts of the dielectric constant in the
presence of interfacial, orientational, ionic, and, electronic polarization mechanisms.

Fig 7.15
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Relative permittivity, r

From C-M Eqn. Also, we need

to consider the electronic
polarizability e of the two
types of ions.

r ( ) 1 N i
=
[ i + e + + e ]
r ( ) + 2 3 o

r also complex

Dielectric Dispersion relation

Since i=0 for >>I, r op

N iQ 2
r ( ) 1 rop 1 N i i
=
=

r ( ) + 2 rop + 2 3 o 3 o M r ( I2 2 + j I )
Lorentz Oscillator Model also applicable to
Elec. Polarizab., by considering resonant freq
and loss factor involved in elect. poln:

i ( ) =

i (0)
2

pi Qx
Q2
i = =
=
E
E M r ( I 2 2 + j I )

e ( ) =

e (0)
2

I Fig 7.58

1 + j
1 +
IPrinciples
Devices, Third Edition, S.O. Kasap ( McGraw-Hill,
I and
I Materials
of Electronic
From

e2005)

e
j
e e

Dielectric Mixtures and Heterogeneous Media

Heterogeneous dielectric media examples

(a) Dispersed dielectric spheres in a dielectric matrix.
(b) A heterogeneous medium with two distinct phases I and II.
(c) Series mixture rule.
(d) Parallel mixture rule.

Fig 7.59
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Effective dielectric constant, reff of the mixture

C= oreff A/d
In Solid Solution, we simply add the polarizabilities (CM Eqn) of
each species of ions weighted by their concentration, e.g. CsCl
Consider a heterogeneous dielectric that has two mixed phases I
and II with diel. Constt. r1 and r2, and volume fraction v1 and v2,
such that v1 + v2 = 1 (fig. b), useful mixture rule is

n
reff

=v +v
n
1 r1

n
2 r2

n=depends on type of mixture,

For series connected stack (fig.(c)), n = -1,
For parallel connected stack (fig.(d)), n = 1.
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)

Maxwell-Garnett formula
For dispersed dielectric spheres (fig.(a)) having
dielectric constant r1 such as air pores, in a
continuous dielectric matrix (with r2)

reff r 2
r1 r 2
= v1
reff + 2 r 2
r1 + 2 r 2

Validity well upto about 20% of volume fraction.

Useful for predicting reff of many different types of dielectric
that have dispersed pores.
e.g., 41% porosity in SiO2 changes r from 3.9 to 2.5 (a trick in making
low-K dielectric for interlayer dielectric (ILD) between multilayers of
metal interconnect lines in Microlectronic industry, as they offer high
speed operation of chip due to lower RC time constant)
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap ( McGraw-Hill, 2005)