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10 authors, including:
Xinghua Zhang
Zunming Lu
SEE PROFILE
Xuewen Xu
Meng Fan-Bin
SEE PROFILE
SEE PROFILE
Journal
Xinghua Zhang, Lanlan Li, Zunming Lu, Jing Lin, Xuewen Xu, Yuanhui Ma, Xiaojing Yang,
Fanbin Meng, Jianling Zhao, and Chengchun Tang
School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China
eects of carbon and oxygen impurities were investigated by
experimental and theoretical points of view. In experimental
part, BN was prepared using sodium borohydride (NaHB4)
and ammonium chloride (NH4Cl) as raw materials (RM)
without carbon and oxygen elements. In addition, BCNO
phosphors were prepared by urea combustion method12 using
boric acid (H3BO3), urea (CON2H4), and polyethylene glycol
(PEG) as RM. The spectra properties of BN and BCNO
phosphors with dierent PEG masses were investigated. In
theoretical part, the electronic structures of BN and BCNO
were calculated with rst-principle calculations and the
eects of carbon and oxygen impurity levels were discussed.
Finally, an energy level diagram was given to explain the
eects of nitrogen vacancies, carbon and oxygen impurities
on the luminescence properties of BCNO phosphors.
I.
Introduction
ORON nitride (BN) especially hexagonal BN-based materials13 have emerged as promising phosphors without
rare-earth doping. To modulate the emission spectra of BN,
much eort has been devoted to the development of boron
carbon nitride (BCN) materials.47 Both theoretical and
experimental results show the adjustable luminescence properties of BCN materials.810 However, the photoluminescence
(PL) intensity and quantum eciency of the BCN compounds are very low.11 Recently, Okuyama12 has synthesized
boron carbon oxynitride (BCNO) phosphors with high quantum eciency and tunable spectra using urea combustion
method. The BCNO phosphors have many advantages13 such
as low sintering temperatures (below 900C) under atmosphere pressure, low cost and nontoxicity, wide range of excitation from short ultraviolet to blue, and emission spectra
from violet to near-red regions, respectively.
BCNO phosphors have great potential applications in general lighting, automobiles, white light-emitting diode, phosphorus pigments, biological imaging, and DNA labeling.1416
However, the luminescence mechanism of BCNO phosphor
remains unclear at present. Up to now, there are two possible emission mechanisms for BCNO phosphors, one possible
emission mechanism is that the emission of BCNO phosphors may be induced by the closed-shell BO and BO2
anions that act as high-eciency luminescence centers.17 The
other possible emission mechanism is attributed to the impurity defects especially nitrogen vacancies in the BCNO nanocrystals which is responsible for the observed PL
properties.18 In addition to the nitrogen vacancies, the carbon and oxygen impurities also have great inuence on luminescence properties of BCNO phosphors. In this study, the
II.
Experiments
J. McKittrickcontributing editor
III.
Manuscript No. 33501. Received July 14, 2013; approved September 4, 2013.
Figure 1(a) shows the typical XRD patterns of S1 and S6 samples. The XRD patterns show the formation of turbostratic
246
January 2014
247
(a)
(b)
Fig. 1. (a) XRD patterns of specimens S1 and S6; (b) SEM image
and high-resolution TEM image (inset) of S6 sample.
248
(a)
(b)
January 2014
249
(a)
(b)
(c)
Fig. 6. (a) Total density of state of BCNO and inset shows the
conguration of BCNO; (b) partial density of state of BCNO; (c)
schematic energy level diagram of BCNO phosphors.
On the basis of above results, a simplied energy level diagram can be tentatively constructed to explain the luminescence mechanism for BN and BCNO phosphors, as shown in
Fig. 6(c). For BN sample, there is no carbon-related levels,
and the 215-nm (~5.8 eV) excitation for S1 is induced by the
band gap transition. Nitrogen vacancy levels called threeboron center (VN3) and one-boron center (VN1) will appear
below conduction band 1.0 and 0.7 eV, respectively, and the
280-nm (~4.4 eV) excitation is induced by the transition from
valence band to nitrogen vacancy levels for all the samples.
In addition, oxygen impurity is inevitable in preparing BN
and it may produce an energy level of ~4.5 eV below the
conduction band. The 350-nm (~3.5 eV) excitation for specimen S1 may be induced by the transition from oxygen impurity levels to nitrogen vacancy levels. For BCNO samples,
when the carbon impurity concentration is little (S2), carbonrelated defects will produce an energy level of ~4.1 eV below
conduction band. Except 280- and 350-nm excitation peaks,
a 300-nm (~4.1 eV) excitation peak appears, which is induced
by the transition from carbon-related levels to conduction
band. With increasing carbon source, the 300-nm excitation
peak disappears, substituted by a broad excitation band
between 280 and 350 nm, which is probably induced by the
broadening of carbon-related levels. The emission spectra
can also be explained by the energy level diagram. For S1
sample, the emission is mainly induced by the transition from
nitrogen vacancy levels to oxygen impurity levels. For S2
sample, carbon impurity levels appear and the emission is
mainly induced by the transition from nitrogen vacancy levels to carbon impurity levels. With further increasing carbon
source, the carbon-related levels become broader and the carbon-related levels may shift with carbon impurity concentration in the range 2 ~ 3 eV, which results in the changeable
emission spectra of BCNO phosphors.21,24,34 The absorption
spectra are also correlated with the nitrogen vacancy levels,
carbon- and oxygen-related levels, which can be understood
by the energy level diagram.
IV.
Conclusions
Acknowledgments
This work was supported by the National Natural Science Foundation of China
(nos. 51172760, 51171056, 11104073, and 51272064) and Natural Science Foundation of Hebei Province of China (nos. E2011202012 and E2012202044) and
Tianjin Key Technology R&G Program (11ZCKFGX01300).
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