PD -9.

1484B

IRF9Z24N
HEXFET Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating
l 175C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
l

VDSS = -55V
RDS(on) = 0.175

ID = -12A
S

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.

TO-220AB

Absolute Maximum Ratings

ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Parameter

Max.

Continuous Drain Current, VGS @ -10V

Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw

-12
-8.5
-48
45
0.30
20
96
-7.2
4.5
-5.0
-55 to + 175

Units
A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

0.50

3.3

62

C/W

8/27/97

IRF9Z24N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

RDS(on)
VGS(th)
gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
-55

-2.0
2.5

Typ.

-0.05

13
55
23
37

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

350
170
92

V(BR)DSS
V(BR)DSS/TJ

I GSS

Max. Units
Conditions

V
VGS = 0V, ID = -250A
V/C Reference to 25C, I D = -1mA
0.175

VGS = -10V, I D = -7.2A

-4.0
V
VDS = VGS , ID = -250A

S
VDS = -25V, I D = -7.2A
-25
VDS = -55V, VGS = 0V
A
-250
VDS = -44V, VGS = 0V, T J = 150C
100
V GS = 20V
nA
-100
VGS = -20V
19
ID = -7.2A
5.1
nC VDS = -44V
10
V GS = -10V, See Fig. 6 and 13

VDD = -28V

I D = -7.2A
ns

RG = 24

RD = 3.7, See Fig. 10

Between lead,

6mm (0.25in.)
nH
G
from package

and center of die contact

VGS = 0V

pF
VDS = -25V

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD
t rr
Q rr
t on

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
-12
showing the
A
G
integral reverse
-48
p-n junction diode.
S
-1.6
V
TJ = 25C, IS = -7.2A, VGS = 0V
47
71
ns
TJ = 25C, IF = -7.2A
84 130
C di/dt = -100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Starting TJ = 25C, L = 3.7mH

RG = 25, IAS = -7.2A. (See Figure 12)

ISD -7.2A, di/dt -280A/s, VDD V(BR)DSS,

TJ 175C

Pulse width 300s; duty cycle 2%.

IRF9Z24N
100

VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V

10

10

-4.5 V

-4.5 V

1
0.1

VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
TOP

-ID , D ra in -to -S o u rc e C u rre n t (A )

-ID , D ra in -to -S o u rce C u rre n t (A )

100

2 0 s PU LS E W ID TH
TJ
c = 2 5C

TOP

10

100

0.1

-VD S , Drain-to-Source Voltage (V)

2.0

R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )

- I D , D ra in-t o-S o urc e C urre nt (A )

TJ = 2 5 C
TJ = 1 7 5 C

V DS = -2 5 V
2 0 s P U L S E W ID T H
4

-VG S , Ga te-to-S o urce V oltage (V )

Fig 3. Typical Transfer Characteristics

10

100

Fig 2. Typical Output Characteristics,

100

-VD S , Drain-to-Source V oltage (V )

Fig 1. Typical Output Characteristics,

10

20 s PU LSE W ID TH
TCJ = 1 75C

10

I D = -12 A

1.5

1.0

0.5

VG S = -10 V

0.0
-60 -40 -20

20

40

60

80

100 120 140 160 180

T J , Junction T emperature (C)

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF9Z24N
20

V GS
C is s
C rs s
C os s

C , C a p a c ita n c e (p F )

600

500

C is s

400

C os s

=
=
=
=

0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd

-V G S , G a te -to -S o u rc e V o lta g e (V )

700

300

C rs s

200

100

0
10

V DS = -4 4V
V DS = -2 8V

16

12

FO R TEST C IR C U IT
SEE F IGU R E 1 3

A
1

I D = -7.2 A

100

V D S , Drain-to-Source V oltage (V)

10

15

20

A
25

Q G , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

100

O PER ATIO N IN TH IS AR EA LIM ITED

BY R D S(o n)
1 0s

-I D , D ra in C u rre n t (A )

-IS D , R e ve rse D ra in C u rre n t (A )

TJ = 1 50C

10

TJ = 25 C

10

100 s

1m s

VG S = 0 V

0.1
0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

T C = 2 5C
T J = 1 75C
Sin gle Pu lse

1
1

10m s
10

-VS D , S ource-to-Drain V oltage (V )

-VD S , Drain-to-Source V oltage (V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

100

IRF9Z24N
12

RD

VDS

-ID , D ra i n C u rre n t (A m p s )

VGS
9

D.U.T.

RG

VDD

-10V
6

Pulse Width 1 s
Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

3

td(on)

tr

t d(off)

tf

VGS

0
25

50

75

100

125

150

10%

175

TC , C ase T emperature (C)

90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

VDS

Fig 10b. Switching Time Waveforms

T herm al R esponse (Z th J C )

10

D = 0 .5 0
1
0 .2 0
0 .1 0
0 .0 5

0.1

PDM

0 .0 2
0 .0 1

S IN G LE P U L S E
(T H E R M A L R E S P O N S E )

1
t

Notes :
1. D uty fac tor D = t

0.01
0.00001

/t

2. P ea k TJ = P DM x Z th JC + T C

0.0001

0.001

0.01

0.1

t 1 , R ectan gular P ulse D uratio n (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

A
1

IRF9Z24N

D .U .T

RG

IA S
- 20V
tp

VD D
A
D R IV E R

0 .0 1

15V

Fig 12a. Unclamped Inductive Test Circuit

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)

250

VDS

TO P
B OTTO M

200

150

100

50

A
25

I AS

ID
-2.9A
-5.1 A
-7.2 A

50

75

100

125

150

Starting T J , Junction Temperature (C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG

12V

.3F

-10V
QGS

.2F

QGD

D.U.T.

+VDS

VGS

VG

-3mA

Charge

Fig 13a. Basic Gate Charge Waveform

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

175

IRF9Z24N
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T*

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

dv/dt controlled by RG
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test

RG
VGS

+
-

VDD

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D=

P.W.
Period

] ***

VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent

[
Ripple 5%

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

]
ISD

IRF9Z24N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )

1 0 . 5 4 (. 4 1 5 )
1 0 . 2 9 (. 4 0 5 )

-B -

3 . 7 8 (. 1 4 9 )
3 . 5 4 (. 1 3 9 )

4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )

-A -

1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )

6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )

4
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )

1 . 1 5 ( .0 4 5 )
M IN
1

1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )

3X

1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )

L E A D A S S IG N M E N T S
1 - G A TE
2 - D R AIN
3 - SO URCE
4 - D R AIN

4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )

0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 )

3X
M

B A

2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )

2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H

0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )

3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB
E XPLE
AM PLE
N 1010
IRF 1010
E X AM
: T:HI TSHIISS AISN AIRF
S ELY
MB LY
W ITWH ITAHS SAESMB
T DE
CO DE
9B 1M
LO TLOCO
9B 1M

INRTE
T ION
IN TE
NARTNA
ION
AL AL
T IF IER
R ECRTEC
IF IER
F 1010
IR F IR
1010
LO GO
LO GO
9246
9246
9B 9B1M 1M
S SBEM
A S SAEM
LYB LY
LO
T
CO DE
LO T CO DE

P A RT
NU
P A RT
NU M
BEMRBE R

D A TE
D A TE
C ODCEOD E
(Y
YW
(Y YW W ) W )
= AYE
Y Y Y=Y YE
R AR
W WW =W W= EW
EKE EK

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Data and specifications subject to change without notice.
8/97

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/