Beruflich Dokumente
Kultur Dokumente
PHENOMENA
IN THIN FILMS AND
MICROELECTRONIC
MATERIALS
Edited by
np
NOYES PUBLICATIONS
Park Ridge, New Jersey, U.S.A.
Contents
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Contents
Diffusion Data in Grain Boundaries and Thin Films:
Diffusion Hierarchy
Relationship Among GB Diffusion, Lattice Diffusion and GB
Energy
Influence of Solute Segregation on GB Self-Diffusion and Its
Relationship with GB Energy, Solute Segregation and GB
Diffusion
Thermal Behavior of KSDJ,
Composition Dependence of K8l)\y
Estimating Grain Boundary Segregation Parameters from
Diffusion Measurements
Variable Effects of Solutes on GB Diffusion
Concluding Remarks
References
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Contents
Interdiffusion in a Steep Concentration Gradient
Gradient Energy Effects
Strain Effects
Non-Linear Diffusion Effects
Measurement Techniques
Relationship to Other Diffusion Measurements
Stability of Modulated Structures
Experimental Results on Crystalline Metals
Early Work
Gold-Silver
Copper-Palladium
Gold-Nickel
Copper-Gold
Copper-Nickel
Silver-Palladium
Ternary Systems
Experimental Results on Amorphous Metals
Introduction to Amorphous Metals
Interdiffusion Measurements
Discussion
Experimental Results on Semiconductors
GaAs-AlAs
GaSb-InSb
Amorphous Si-Ge
Discussion
Conclusions
References
4. DIFFUSION AND GROWTH IN OXIDE FILMS
Alan Atkinson
Introduction
Experimental Techniques
Secondary Ion Mass Spectroscopy (SIMS) Sectioning
Nuclear Reaction Depth Profiling
Sputter-Sectioning of Radioactive Tracers
Chemical Dissolution
Gaseous Exchange
Diffusion in Growing Oxide Films
Lattice Diffusion in Oxides
Point Defects in Oxides
Self-Diffusion
Cation Self-Diffusion
Oxygen Ion Self-Diffusion
Diffusion in Doped Oxides
Heterovalent Doping
Homoyalent Doping
Solute Diffusion
Tracer Solute Diffusion
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xii
Contents
Dilute Limit
Non-Dilute
Amorphous Oxides
Theoretical Estimates of Diffusion Parameters
Short-Circuit Diffusion
Dislocation Diffusion
Grain Boundary Diffusion
Surface Diffusion
Theoretical Studies of Dislocations, Grain Boundaries and
Surfaces
Dislocations
Grain Boundaries
Oxide Film Growth by Thermal Oxidation
Theory of Oxide Film Growth
Thick Films
Thin Films
Defects Injected at the Metal/Oxide Interface
Defects Injected at the Oxide/Gas Interface
Oxide Films Growing by Outward Cation Transport
Growth of CoO
Growth of NiO
Growth of Other Oxides by Cation Transport
Oxide Films Growing by Inward Oxygen Transport
Growth of Highly Protective Films
Oxidation of Alloys
Protection by Incorporated Coatings
Concluding Remarks
References
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Contents
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Contents
Reduced Interaction in Au Systems by CO
330
Reduced Interactions in Pt Systems by Oxygen
332
Reduced Interactions by Oxygen for the Ni and Cu Systems . . . 333
Competing Ambient Effects
335
Diffusion Through a Less-Electronegative Metal Layer
340
Ambient Effects on Competing Interactions and on
Preferential Reactions
344
Oxidation Effects of the Outdiffused Species
346
Effect of Oxygen on the Suicide Formation
34 7
Applications and Future Studies.
354
Summary
365
References
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Contents
Electrical Requirements in Contacts
Summary
Importance of the Choice of the Material and of the
Deposition Process
Basic Considerations
Single Crystalline Versus Non-Single Crystalline Films
Summary
Polycrystalline Films Consisting of One Single Layer
Elemental Metallic Films
Effect of ImpuritiesStuffed Barrier
Compound FilmInert Barrier
From Elemental to Compound Films
Single Phase Compounds
Multiphase Compounds
Summary
Amorphous Films Consisting of One Single Layer
General Observations
Examples of Amorphous Diffusion Barriers
Summary
Multilayer Configurations
Sacrificial Barrier
Contacting Layers
Tandem Barriers
Summary
References
9. THERMAL STABILITY OF Pb-ALLOY JOSEPHSON JUNCTIONS.
Masanori Murakami
Introduction
Thermal Strain of Films on Rigid Substrates
Thermal Stability Below Room Temperature
Pb Thin Films
Strain Behavior
Microstructure Changes After Repeated Thermal Cycling
Reduction of Strain Relaxation
Pb-In-Au Base Electrode Material
Strain Behavior
Microstructure Change After Repeated Thermal Cycling.
Correlation Between Device Reliability and Microstructure Change
Pb-Bi Counterelectrode Material
Strain Behavior
Microstructure Change After Repeated Thermal Cycling.
Correlation Between Device Reliability and Microstructure Changes
Thermal Stability Above Room Temperature
Strain Behavior
Primary Strain Relaxation Process
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xvi
Contents
Secondary Relaxation Process
Hillock Formation of Pb-In-Au Base Electrode
Mechanism
Reduction of Hillock Formation
Summary
References
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