CM100BU-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Four IGBTMOD
U-Series Module
100 Amperes/600 Volts

A
B

S 4 - Mounting
Holes

F
E

G
E

M
GvP
EvP

GuP
EuP

C
D

TC Measured
Point

TC
Measured
Point
U

GvN

EuN

EvN

Description:
Powerex IGBTMOD Modules
are designed for use in switching
applications. Each module consists
of four IGBT Transistors in an
H-Bridge configuration, with each
transistor having a reverse-connected super-fast recovery freewheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

H
K
F

4 - M4 NUTS

GuN

0.110 - 0.5 Tab

V
T
U

Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking

GuP
EuP
U

GvP
EvP
V

GuN
EuN

GvN
EvN

Outline Drawing and Circuit Diagram

Dimensions

Inches

2.83

Millimeters

Dimensions

Inches

72.0

0.74

Millimeters

550.25

0.02

0.5

91.0

1.55

39.3

18.7

2.170.01

3.58

2.910.01

0.63

16.0

0.43

11.0

0.57

14.4

74.00.25

Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100BU-12H is a
600V (VCES), 100 Ampere FourIGBT IGBTMOD Power Module.

0.79

20.0

0.22 Dia.

5.5 Dia.

0.69

17.5

0.32

8.1

0.75

19.1

1.02

26.0

0.39

10.0

0.59

15.0

Type

Current Rating
Amperes

VCES
Volts (x 50)

0.41

10.5

0.20

5.0

CM

100

12

0.05

1.61

41.0

1.25

71
This datasheet has been downloaded from http://www.digchip.com at this page

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100BU-12H
Four IGBTMOD U-Series Module
100 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 C unless otherwise specified

Ratings
Junction Temperature

Symbol

CM100BU-12H

Units

Tj

-40 to 150

Tstg

-40 to 125

Collector-Emitter Voltage (G-E SHORT)

VCES

600

Volts

Gate-Emitter Voltage (C-E SHORT)

VGES

20

Volts

IC

100

Amperes

ICM

200*

Amperes

IE

100

Amperes

Peak Emitter Current**

IEM

200*

Amperes

Maximum Collector Dissipation (Tc = 25C)

Pc

400

Watts

Mounting Torque, M4 Main Terminal

15

in-lb

Mounting Torque, M5 Mounting

31

in-lb

390

Grams

Viso

2500

Volts

Storage Temperature

Collector Current (Tc = 25C)

Peak Collector Current (Tj 150C)
Emitter Current** (Tc = 25C)

Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

mA

Gate Leakage Voltage

IGES

VGE = VGES, VCE = 0V

0.5

4.5

7.5

Volts

2.4

3.0

Volts

Volts

nC

Gate-Emitter Threshold Voltage

VGE(th)

IC = 10mA, VCE = 10V

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 100A, VGE = 15V, Tj = 25C

IC = 100A, VGE = 15V, Tj = 125C

Total Gate Charge

QG

VCC = 300V, IC = 100A, VGE = 15V

200

Emitter-Collector Voltage*

VEC

IE = 100A, VGE = 0V

2.6

Min.

Typ.

Max.

Units

8.8

nf

4.8

nf

1.3

nf

2.6

Volts

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified

Characteristics

Symbol

Test Conditions

Input Capacitance

Cies

Output Capacitance

Coes

Reverse Transfer Capacitance

Cres

Resistive

Turn-on Delay Time

td(on)

VCC = 300V, IC = 100A,

100

ns

Load

Rise Time

tr

VGE1 = VGE2 = 15V,

250

ns

Switch

Turn-off Delay Time

Times

Fall Time

VCE = 10V, VGE = 0V

td(off)

RG = 6.3V, Resistive

200

ns

tf

Load Switching Operation

300

ns

Diode Reverse Recovery Time

trr

IE = 100A, diE/dt = -200A/s

160

ns

Diode Reverse Recovery Charge

Qrr

IE = 100A, diE/dt = -200A/s

0.24

Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified

Characteristics

Test Conditions

Rth(j-c)Q

Thermal Resistance, Junction to Case

Rth(j-c)D

Per FWDi 1/4 Module

Rth(c-f)

Per Module, Thermal Grease Applied

Contact Thermal Resistance

72

Symbol

Thermal Resistance, Junction to Case

Per IGBT 1/4 Module

Min.

Typ.

Max.
0.31

Units
C/W

0.7

C/W

0.025

C/W

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100BU-12H
Four IGBTMOD U-Series Module
100 Amperes/600 Volts

OUTPUT CHARACTERISTICS
(TYPICAL)

200

14

VGE = 20V

13

160
15

12

120
11

80
10

40

VCE = 10V
Tj = 25C
Tj = 125C

160

COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)

Tj = 25oC

COLLECTOR CURRENT, IC, (AMPERES)

120

80
40

0
0

3
2
1

12

16

20

50

100

150

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)

FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)

CAPACITANCE VS. VCE

(TYPICAL)

103

IC = 200A

IC = 100A

4
2

Cies
CAPACITANCE, Cies, Coes, Cres, (nF)

200

101
Tj = 25C

Tj = 25C
EMITTER CURRENT, IE, (AMPERES)

102

100

Coes

Cres

10-1
VGE = 0V
f = 1MHz

IC = 40A

101
1.0

0
0

12

16

20

1.5

2.0

2.5

3.0

3.5

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

103

103
td(off)

REVERSE RECOVERY TIME, trr, (ns)

VCC = 300V
VGE = 15V
RG = 6.3
Tj = 125C

tf

102
td(on)

101
COLLECTOR CURRENT, IC, (AMPERES)

102

101

Irr

tr

101
100

101
100

101
EMITTER CURRENT, IE, (AMPERES)

101

102

GATE CHARGE, VGE

di/dt = -200 A/sec

Tj = 25C

trr

100

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

102

102

10-2
10-1

4.0

100
102

20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

10

SWITCHING TIME, (ns)

VGE = 15V
Tj = 25C
Tj = 125C

0
0

10

REVERSE RECOVERY CURRENT, Irr, (AMPERES)

COLLECTOR CURRENT, IC, (AMPERES)

200

COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)

TRANSFER CHARACTERISTICS
(TYPICAL)

IC = 100A
VCC = 200V

16

VCC = 300V

12
8
4

0
0

50

100

150

200

250

300

GATE CHARGE, QG, (nC)

73

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)

10-3
101

100

10-2

10-1

100

10-1

10-1

10-2

10-2

10-3
10-5
TIME, (s)

74

101

Single Pulse
TC = 25C
Per Unit Base = Rth(j-c) = 0.31C/W

10-4

10-3
10-3

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)

Zth = Rth (NORMALIZED VALUE)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)

Zth = Rth (NORMALIZED VALUE)

CM100BU-12H
Four IGBTMOD U-Series Module
100 Amperes/600 Volts

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)

10-3
101

100

10-2

10-1

100

101

Single Pulse
TC = 25C
Per Unit Base = Rth(j-c) = 0.7C/W

10-1

10-1

10-2

10-2

10-3
10-5
TIME, (s)

10-4

10-3
10-3