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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 55, NO.

10, OCTOBER 2007

2183

Novel Dual-Mode Dual-Band Filters Using


Coplanar-Waveguide-Fed Ring Resonators
Xiu Yin Zhang, Student Member, IEEE, and Quan Xue, Senior Member, IEEE

AbstractThis paper presents a novel approach for designing


dual-mode dual-band bandpass filters with independently controlled center frequencies and bandwidths. Two microstrip
perturbed ring resonators are employed to obtain dual-mode
dual-band responses. Novel feeding structures are introduced to
simultaneously feed the ring resonators and conveniently control
the coupling strength between resonators and feeding lines, resulting in a wide tunable range of external quality factors. Two
kinds of filter configurations with compact size are proposed. Both
of them provide sufficient degrees of freedom to satisfy various requirements of external qualify factors and coupling coefficients at
both passbands. Therefore, the center frequencies and fractional
bandwidths of both passbands can be independently tuned to
desired specifications within a wide range. To verify the proposed
method, four filters are implemented. The measured results exhibit
dual-mode dual-band bandpass responses with high selectivity.
Index TermsBandpass filter, compact size, dual band, dual
mode, feeding structure.

I. INTRODUCTION

UAL-BAND filters are highly desired in modern dualband wireless communication systems. Therefore, they
have been extensively investigated and various design approaches have been proposed [1][12]. Among them, there
are three typical methods. The first approach is to use the
cascade connection of a bandpass filter and a bandstop filter
[1]. However, it occupies large size. The second method is to
utilize stepped-impedance resonators [2][7]. In [2][5], halfand one-wavelength resonators of this kind are used to design
dual-band filters. Extra transmission zeros are introduced in
[6] and [7] to improve the selectivity. The third approach is
to combine two individual resonators with common input and
output [8][12]. In [9] and [10], two sets of resonators are
employed in parallel configurations to design dual-band filters,
leading to large size. A compact dual-band filter is realized
using two stacked ring resonators [11], with the drawback of
high insertion loss at the upper passband and limited controllable range of passband frequency and bandwidth. In addition,
it is difficult to obtain different external quality factors and
coupling coefficients to simultaneously meet the specifications
at both the passbands. To alleviate this problem, a novel configuration is proposed in [12], which can achieve desired coupling
coefficients at all passbands. However, the tunable range of the

Manuscript received June 19, 2007; revised July 4, 2007. This work was supported by the Research Grants Council of Hong Kong Special Administrative
Region under Grant CityU121905.
The authors are with the Wireless Communications Research Center, Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong
Kong (e-mail: zhangxiuyin@hotmail.com).
Digital Object Identifier 10.1109/TMTT.2007.906501

external quality factors is still limited, causing the bandwidth


restriction in filter design.
To obtain the required specifications at two passbands, i.e.,
center frequencies and bandwidths, a novel approach for dualband filter design is proposed. Two microstrip ring resonators
with perturbation patches are adopted to obtain dual-mode dualband responses. Although ring resonators possess the advantages of low radiation, easy fabrication and simple structure,
ring filters with edge or end coupling suffer from loose coupling between resonators and feeding lines, resulting in high
external quality factors [13][19]. Therefore, they can only obtain narrow fractional bandwidths and then cannot be adopted in
wideband application. To alleviate this problem, some methods
are proposed [20], [21]. Unfortunately, they are not suitable for
dual-band application. In this paper, two novel feeding structures are introduced for designing dual-band filters with wide or
narrow bandwidths. These feeding schemes can be used to enhance tunable range of the external quality factors. At the same
time, the coupling coefficients can be controlled within a wide
range by tuning the perturbation patches. Based on these features, two configurations with compact size are provided with
enough degrees of freedom to obtain various external qualify
factors and coupling coefficients at both the passbands. As a
result, the frequency and bandwidth requirements of both passbands can be independently satisfied. To verify the proposed design, four filters with various bandwidths are implemented.
This paper is organized as follows. Section II characterizes
the microstrip ring resonators fed by coplanar waveguides
(CPWs). In Section III, a configuration using the back-to-back
microstrip ring resonators for dual-band filter design with
different fractional bandwidths is presented. Two filters of this
type are designed, and verified by experiment. In Section IV,
another configuration utilizing the embedded ring resonators
is proposed and characterized. Two experimental filters are
implemented with diverse fractional bandwidths. A comparison
and discussion are included in Section V. Finally, a conclusion
is given in Section VI.
II. CHARACTERISTICS OF CPW-FED
MICROSTRIP RING RESONATORS
As illustrated in Fig. 1(a), the CPW-fed microstrip ring resonator consists of two layers [21]. On the top layer, a square-ring
resonator and a perturbation patch are etched. On the bottom
layer, two 50- orthogonal CPW feeding lines and open stubs
are fabricated to feed the microstrip ring resonator. As shown in
Fig. 1(a), the circuits on different layers enclosed within dashed
lines are overlapped to provide broadside coupling.
By adopting this broadside-coupled mechanism, the coupling
strength between the feeding lines and resonators can be conve-

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 55, NO. 10, OCTOBER 2007

Fig. 2. Comparison of external quality factors between edge- and broadsidecoupled configurations.

Fig. 1. Structures of microstrip ring resonators. (a) Ring resonator fed by CPW.
(b) Ring resonator fed by microstrip.

niently tuned within a wide range. Since the coupling strength


for this configuration
is related to the external quality factor
can be achieved. On the bottom
[22], a wide tunable range of
layer, the stub length , stub width , and gap can be adjusted
to obtain various . On the top layer, the microstrip width
can be used to control
. Another tuning element is the substrate between the two layers. Use of a thin- and high-permit.
tivity substrate will lead to low
Compared with the edge-coupled configuration shown in
Fig. 1(b), the broadside-coupled one can obtain wider tunable
range of . A full-wave simulator is used to extract the
of
these two structures for comparison.
can be extracted as

Fig. 3. Configuration of the proposed dual-band filters using back-to-back


resonators.

(1)
denotes the resonant frequency, and
is the
where
bandwidth over which the phase shifts 90 with respect to the
absolute phase at [22]. For comparison, two resonators with
the same dimensions are fed by microstrip and CPW stubs, as
shown in Fig. 1(a) and (b). The lengths of these stubs are used
to control
. The substrate has a relative dielectric constant
of 6.15 and thickness of 0.635 mm. The parameters are
mm,
mm,
mm,
mm,
mm,
mm,
mm,
mm,
mm, and
mm. The extracted results are compared in
Fig. 2. As can be observed, the broadside-coupled configuration
obtains a wider range of
and, therefore, can be used to design
filters with wide or narrow bandwidths. Conversely, the edgecoupled one has high
within a limited range and, thus, can
only be applied to narrowband filter design.

Based on this structure, two configurations are proposed for


designing dual-mode dual-band filters. Detailed descriptions
follow in Sections III and IV.
III. DESIGN OF DUAL-MODE DUAL-BAND FILTERS
USING BACK-TO-BACK RING RESONATORS
A. Filter Configuration
The proposed configuration is shown in Fig. 3. It consists of
three layers. The 50- feeding lines and open stubs are fabricated on the midlayer to simultaneously feed the two microstrip
ring resonators, which are etched on the top and bottom layers,
respectively. The two resonators are placed back-to-back, indicating the occupied area is the same as that of a conventional
single-band microstrip square-ring filter centered at the lower

ZHANG AND XUE: NOVEL DUAL-MODE DUAL-BAND FILTERS USING CPW-FED RING RESONATORS

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TABLE I
DIMENSIONS (IN MILLIMETERS) OF THE PROPOSED
FILTERS USING BACK-TO-BACK RESONATORS

Fig. 4. Operating frequencies against the side length of the upper ring.

passband frequency of the proposed dual-band filter. It should


be noted that the upper substrate is smaller than the lower one
so that the 50- feeding lines can accommodate subminiature
(SMA) connectors.
The perimeters of the rings are around one guided wavelength at corresponding resonant frequencies. Thus, the resonant frequencies of the upper and lower resonators can be approximately expressed as
(2)
(3)

For filter design, the coupling coefficients and external


quality factors are key issues to obtain the desired specifications. In this configuration, the required coupling coefficients
can be independently obtained by adjusting the dimensions of
corresponding perturbation patches. As for the external quality
factors, this configuration also provides plenty of tuning elements to meet the requirements. Assume the resonant frequency
of the upper resonator is higher than that of the lower resonator.
The external quality factors of the upper and lower passbands,
and
, can be expressed as follows:
i.e.,
(5)
(6)
by adjusting the microstrip
We can satisfy the demand of
width , CPW stub length , width , and gap . The recan be met by tuning the width
and length
quirement of
of the microstrip line on the top layer. By this way, the required coupling coefficients and external quality factors at the
two passbands can be simultaneously obtained.
B. Implementation of Two Filters With Various Bandwidths

where is the speed of light in free space, and denote the side
and
represent
lengths of the upper and lower rings, and
the effective permittivities of the upper and lower substrates, respectively. It can be seen from (2) and (3) that resonant frequencies can be controlled by tuning the side lengths of the rings and
using various substrates. Since the two resonators are separated
by the ground plane in the middle, changing the center frequency
of one passband will not affect that of the other. As shown in
Fig. 4, the upper passband is shifted by altering the side length of
the upper ring. Meanwhile, the characteristics of the lower passband remain unchanged. Note that when tuning the side length
of the upper ring, the circuits on the three layers enclosed within
dashed lines are always overlapped so that the open stubs can simultaneously feed the two resonators. Obviously it is difficult to
feed the resonators if the length difference of the two side lengths
is quite large. Therefore, equal side lengths are preferred, namely,
. In this case, the substrates as well as the ring perimeters will be utilized to control the center frequencies. It can be
obtained from (2) and (3) as follows:
(4)
Based on (4), two substrates can be properly selected to facilitate
the filter design.

According to the above discussion, the overall design procedure of this kind of filters can be summarized as follows. First,
select two proper substrates based on (4) and then determine the
side lengths of the square-ring resonators according to (2) and
(3). The next step is to adjust the microstrip width , CPW stub
length , width , gap , and the lower perturbation patch to
obtain the desired characteristics of the lower passband. Finally,
tune the microstrip width , length , and the upper perturbation patch to meet the specifications of the upper passband. Following this design procedure, two dual-mode dual-band filters,
designated as Filter I and Filter II, can be constructed with diverse bandwidths using the same configuration shown in Fig. 3.
The upper and lower resonators are used to generate the upper
and lower passbands, respectively. The relative permittivities of
and
.
the two substrates are selected as
Filter I has the geometric parameters listed in Table I. The circuit size of this filter is around
, where is the
guided wavelength on the lower substrate at the center frequency
of the lower passband. Simulation and measurement were carried out using Ansofts High Frequency Structure Simulator
(HFSS) and Agilents E8753ES network analyzer, respectively.
The simulated and measured results are illustrated in Fig. 5(a).
A dual-mode dual-band bandpass response with high selectivity
is observed. The two passbands, centered at 1.40 and 2.15 GHz,

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 55, NO. 10, OCTOBER 2007

Fig. 6. Simulated and measured results of Filter II.


TABLE II
BANDWIDTHS OF THE FILTERS USING BACK-TO-BACK RESONATORS

Fig. 5. Simulated and measured results of Filter I. (a) Comparison of measurement and simulation without air layer. (b) Comparison of measurement and
simulation with a 0.07-mm air layer.

have the fractional bandwidths of 10% and 3.3%. The insertion


losses are 0.9 and 1.9 dB at the lower and upper passbands. Four
transmission zeros are realized on either side of each passband.
These transmission zeros are created due to the presence of a
parasitic coupling between the input and output and will be influenced by changing the perturbation sizes [23], [24]. The measured results are fairly in agreement with the full-wave simulated ones. Some discrepancies within the upper passband are
observed, which are mainly attributed to an imperfect combination of the two substrates in our manual fabrication. To confirm
it, we simulate the structure with a 0.07-mm air layer inserted
between the two substrates. Other dimensions are fixed, except
the size of perturbation patch. It should be mentioned that two
ground planes are etched on the two substrates both in simulation and implementation to keep the passband frequency unaltered. As shown in Fig. 5(b), the simulation agrees with the
measurement. Therefore, the imperfect combination of the substrates is the primary source for the discrepancy. For practical

application, this problem can be easily overcome by using a


multilayer printed circuit board (PCB) fabrication technique instead of manual implementation.
Filter II is implemented to obtain a wide passband and a
narrow one. Filter dimensions are given in Table I. Compared
with those of Filter I, the lengths of the CPW feeding stubs
and the lower perturbation patch are increased, resulting in a
wider bandwidth of the lower passband. Fig. 6 depicts the results of simulation and measurement. As can be seen, two passbands with quite different bandwidths are achieved. The wide
and narrow passbands are centered at 1.39 and 2.12 GHz, with
the fractional bandwidths of 14.4% and 4.3%. The insertion
losses are 0.8 and 1.6 dB at the lower and upper passbands. The
measured results agree with the simulated ones. The discrepancies within the upper passband stem mainly from the imperfect
combination of the substrates, as discussed above.
The bandwidths of Filter I and Filter II are compared in
Table II. It can be observed that various bandwidths have been
obtained by using the same configuration. It shows that the
bandwidth of each passband can be independently controlled.
IV. DESIGN OF DUAL-MODE DUAL-BAND FILTERS
USING EMBEDDED RING RESONATORS
A. Filter Configuration
Different from the above configuration, two microstrip ring
resonators in this design are fabricated on the same layer, resulting in a single-substrate configuration, as shown in Fig. 7.
It consists of two layers. On the top layer, two homocentric
square-ring resonators are etched. One resonator is inside the

ZHANG AND XUE: NOVEL DUAL-MODE DUAL-BAND FILTERS USING CPW-FED RING RESONATORS

Fig. 7. Configuration of the proposed dual-band filters using embedded ring


resonators.

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less. First, we will investigate the characteristic admittance of


the microstrip-ring-backed CPW open stubs. At the upper resonant frequency , the resonance will occur within the inner
ring, but not within the outer ring. Thus, the outer ring exhibits
high impedance for microwave signals around the frequency .
Therefore, these signals almost cannot be delivered to the outer
ring. In turn, the outer ring will not significantly influence the
characteristics of the left stub, except adding a finite conductor
on its back. The influence of the inner ring on the right stub is
the same at the lower resonant frequency .
For the feeding circuits of the inner resonator, the left stub
with the length induces a discontinuity to the 50- transmismatches
sion line. Assume that the terminating admittance
of the 50- transmission line.
the characteristic admittance
The input admittance at the upper resonant frequency, viewed
, is then
from the right side of line
(7)
where
represents the characteristic admittance of the left
microstrip-backed CPW stubs at the upper resonant frequency
, and denotes the propagation constant at . If
, the circuits on the left side of line
have no effect on
the feeding circuits of the inner resonator. However, it can not
be satisfied, indicating the existence of interaction. To reduce
should be as close to
as possible. Therefore, the
it,
should be low and the length
characteristic admittance
should be short.
may have a loading
The circuit on the right side of line
effect on the feeding circuits of the outer resonator. The input
is
admittance viewed from the left side of line
(8)

Fig. 8. Feeding structure. (a) Geometry. (b) Equivalent circuit for the circuit
on the left side of line AA . (c) Equivalent circuit for the circuit on the right
side of line AA .

other one to make full use of the space inside the large ring, indicating the size is the same as that of a single-band microstrip
square-ring filter centered at the lower passband frequency of
the dual-band filter. The perimeters of the two rings can be adjusted to obtain the desired center frequencies. To avoid mutual coupling, the perturbation patches are attached to the inner
and outer corners of the respective rings. On the bottom layer,
CPW feeding lines and open stubs are fabricated. Shunted to
the 50- CPW lines, the CPW open stubs are adopted to couple
energy between the feeding lines and resonators. As illustrated
in Fig. 7, the circuits on different layers enclosed within dashed
lines are overlapped to provide broadside coupling. The coupling strength or external quality factors can be controlled by
tuning the stub dimensions. Since four stubs are shunted at the
same CPW line, there may be interactions between them. Therefore, analysis on the feeding structure is necessary.
B. Analysis on the Feeding Structure
The feeding structure and its equivalent circuits are illustrated
in Fig. 8. It is assumed that all the transmission lines are loss-

where
denotes the characteristic admittance of the right
microstrip-backed CPW stubs at lower resonant frequency ,
represents the propagation constant at , and is the dis, there will be
tance between the stubs. Ideally, if
no loading effect. However, it cannot hold and, therefore, the
loading effect cannot be eliminated. To lessen it, input admitis required to be as close to zero as possible. Since
tance
is controlled by the separation distance of the two rings and,
and can be adjusted. It can be
thus, cannot be tuned, only
deduced that the lower
, the lower
. Consequently, the feeding stubs of the inner resonator are also required
to have low admittance and short length. To meet this requirement, wide gap and narrow stub should be employed. On the
other hand, the stub dimensions affect the coupling strength or
external quality factors. As a result, proper dimensions are required to simultaneously satisfy these requirements, which can
be accomplished by full-wave simulation.
C. Implementation of Two Filters With Various Bandwidths
Based on the preceding discussion, these types of filters
can be designed as follows. First, determine the perimeters of
the square-ring resonators according to the desired passband
frequencies. Then tune the feeding stubs and perturbation
patches to get the desired specifications of the lower and upper

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 55, NO. 10, OCTOBER 2007

TABLE III
DIMENSIONS (IN MILLIMETERS) OF THE PROPOSED
FILTERS USING EMBEDDED RING RESONATORS

Fig. 10. Simulated and measured results of Filter IV.


TABLE IV
BANDWIDTHS OF THE FILTERS USING EMBEDDED RING RESONATORS

Fig. 9. Simulated and measured results of Filter III.

passbands, respectively. To verify this design, two dual-mode


dual-band filters are implemented using the same configuration
shown in Fig. 7. The substrate Duroid/RT 6002 is used for
this design with a relative permittivity of 6.15 and thickness of
0.635 mm.
Filter III is constructed to have two similar passband bandwidths. The dimensions are provided in Table III. This filter has
, where
is the guided
the size of around
wavelength at the center frequency of the lower passband. The
simulated and measured results are plotted in Fig. 9. Centered
at 1.45 and 2.02 GHz, the lower and upper passbands have the
fractional bandwidths of 8.5% and 7.9%, respectively. The insertion losses are 0.9 and 1.3 dB at the lower and upper passbands, and both passband return losses are better than 14 dB.
The out-of-band rejection level is better than 25 dB. Some discrepancies between simulation and measurement are observed,
which can be attributed to the fabrication tolerances.
Filter IV is built to achieve a wide passband and a narrow one.
Geometric parameters of this filter are given in Table III. Fig. 10
shows the calculated and measured results. The two passbands
are centered at 1.53 and 2.16 GHz with the fractional bandwidths of 10.6% and 3.6%. The lower and upper passbands have
the insertion losses of 0.8 and 1.8 dB, respectively. Still, four
transmission zeros are created near the passbands. The measured results agree well with the simulated ones.

The fractional bandwidths of these two filters are listed in


Table IV. It can be seen that various bandwidths have been
achieved by altering the filter dimensions. It is verified that the
dual-band filters with independently controlled bandwidths can
be obtained.
V. COMPARISON AND DISCUSSION
The implemented four filters exhibits lower insertion losses
than those using ring resonators reported in [11] and [13][19].
However, the bandwidths of the passbands are different. Therefore, a further comparison on unloaded quality factors is necessary. Table V lists the measured results of the implemented
resonators and other resonators whose unloaded quality factors
are provided in the references. It can be observed that there is no
significant difference since the resonators are of the same type,
but as for external quality factors, the developed filters can provide a wider tunable range than others, as detailed in Section II.
With regard to the comparison of dual-band filter design, the
proposed approach offers high design flexibility such as independently controlled center frequencies and bandwidths within
a wide range. Moreover, the structure is simple and compact.
The comparison of the developed filters with some typical filters is summarized in Table VI. To design filters for practical
applications, the main concern is to obtain required specifications including center frequencies, fractional bandwidths, insertion loss, size, and so on. For filters using stepped-impedance
resonators [2][7], [12], the center frequencies and fractional
bandwidths of the two passbands are dependent on each other.
In turn, it is difficult to adjust the bandwidth to meet required
specifications of each passband. For filters utilizing two sets of

ZHANG AND XUE: NOVEL DUAL-MODE DUAL-BAND FILTERS USING CPW-FED RING RESONATORS

TABLE V
COMPARISON OF UNLOADED QUALITY FACTORS

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implemented to demonstrate the proposed approach. Dual-mode


dual-band bandpass responses with high selectivity and various
fractional bandwidths have been observed. Transmission zeros
have been realized on both sides of each passband to achieve
sharp rolloff. In addition, all the filters have compact size. With
the advantages of independently controlled center frequencies
and bandwidths within a wide range, sharp rolloff, simple structures, and compact size, these types of dual-mode dual-band filters will be useful for wireless applications.
ACKNOWLEDGMENT
The authors would like to thank the editors and reviewers of
this paper for their valuable comments and suggestions, which
greatly improved this paper. The authors would also thank
J.-X. Chen, City University of Hong Kong, Kowloon, Hong
Kong, for his helpful discussions.
REFERENCES

TABLE VI
COMPARISON WITH SOME PRIOR DUAL-BAND FILTERS

resonators, they have controllable center frequencies. Unfortunately, some need an extra matching network [8], others have
limited controllable range of bandwidths or even fixed bandwidths [9][11]. Our work can overcome this problem. Both
the center frequency and bandwidth of each passband can be
separately controlled within a wide range. As for filter size,
the proposed filters achieve the same size with corresponding
single-band counterparts, whereas the area occupied by the filters presented in [1], [9], [10], and [12] is larger than that of
corresponding single-band filters. In practical application, the
size of the proposed filters can be further reduced by using meandering ring or slow-wave structures.
VI. CONCLUSION
In this paper, a novel approach has been presented to design dual-mode dual-band filters. Two configurations have been
proposed. By using these configurations, the center frequencies
and fractional bandwidths of both passbands can be independently controlled within a wide range. Four filters have been

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Xiu Yin Zhang (S07) was born in Hubei Province,


China. He received the B.S. degree in electrical
engineering from Chongqing University of Posts and
Telecommunications, Chongqing, China, in 2001,
the M.S. degree in electrical engineering from South
China University of Technology, Guangzhou, China,
in 2006, and is currently working toward the Ph.D.
degree at the City University of Hong Kong.
From 2001 to 2003, he was with the ZTE Corporation, Shenzhen, China, where he was involved with
wireless communications systems. His research interests include RF and microwave passive and active circuits, and microstrip
antennas.

Quan Xue (M02SM04) was born in Xichang,


Sichuan Province, China. He received the B.S., M.S.,
and Ph.D. degrees in electronic engineering from the
University of Electronic Science and Technology of
China (UESTC), Chengdu, China, in 1988, 1990,
and 1993, respectively.
In 1993, he joined the UESTC, as a Lecturer,
becoming an Associate Professor in 1995 and a
Professor in 1997. From October 1997 to October
1998, he was a Research Associate and then a
Research Fellow with the Chinese University of
Hong Kong. In 1999, he joined the City University of Hong Kong, Kowloon,
Hong Kong, where he is currently an Associate Professor and the Director of
the Applied Electromagnetics Laboratory. Since May 2004, he has been the
Principal Technological Specialist of the State Integrated Circuit Design Base,
Chengdu, Sichuan Province, China. He has authored or coauthored over 90
internationally referred papers. His current research interests include antennas,
smart antenna arrays, active integrated antennas, power amplifier linearization,
microwave filters, millimeter-wave components and subsystems, monolithic
microwave integrated circuits (MMICs), and RF integrated circuits (RFICs).
Dr. Xue was the recipient of the Distinguished Academic Staff Award for his
contribution in development of millimeter-wave components and subsystems.
He was co-supervisor of two IEEE Microwave Theory and Techniques Society
(IEEE MTT-S) International Microwave Symposium (IMS) Best Student Paper
Contest award winners (third place 2003, and first place 2004).

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