BUZ 345

SIPMOS Power Transistor

N channel
Enhancement mode
Avalanche-rated

Pin 1

Pin 2

Pin 3

Type

VDS

ID

RDS(on)

Package

Ordering Code

BUZ 345

100 V

41 A

0.045

TO-218 AA

C67078-S3121-A2

Maximum Ratings
Parameter

Symbol

Continuous drain current

ID

TC = 28 C

Values

Unit

A
41

IDpuls

Pulsed drain current

TC = 25 C

164

Avalanche current,limited by Tjmax

IAR

41

Avalanche energy,periodic limited by Tjmax

EAR

18

Avalanche energy, single pulse

EAS

mJ

ID = 41 A, VDD = 25 V, RGS = 25
L = 249.9 H, Tj = 25 C

280

Gate source voltage

VGS

Power dissipation

Ptot

TC = 25 C

20

W
150

Operating temperature

Tj

-55 ... + 150

Storage temperature

Tstg

-55 ... + 150

Thermal resistance, chip case

RthJC

0.83

Thermal resistance, chip to ambient

RthJA

75

DIN humidity category, DIN 40 040

K/W

IEC climatic category, DIN IEC 68-1

Data Sheet

55 / 150 / 56

05.99

BUZ 345

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Static Characteristics

Drain- source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 0.25 mA, Tj = 25 C

Gate threshold voltage

100

VGS(th)

VGS=VDS, ID = 1 mA
Zero gate voltage drain current

2.1

IDSS

VDS = 100 V, VGS = 0 V, Tj = 25 C

0.1

VDS = 100 V, VGS = 0 V, Tj = 125 C

10

100

Gate-source leakage current

IGSS

VGS = 20 V, VDS = 0 V
Drain-Source on-resistance

10

100

RDS(on)

VGS = 10 V, ID = 26 A

Data Sheet

nA

0.04

0.045

05.99

BUZ 345

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Dynamic Characteristics

Transconductance

gfs

VDS 2 * ID * RDS(on)max, ID = 26 A
Input capacitance

10

1800

2700

560

840

270

400

Crss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

pF

Coss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

Ciss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

20

td(on)

ns

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Rise time

30

45

110

165

300

390

150

195

tr

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Turn-off delay time

td(off)

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Fall time

tf

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50

Data Sheet

05.99

BUZ 345

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Reverse Diode

Inverse diode continuous forward current

IS

TC = 25 C
Inverse diode direct current,pulsed

164
V

1.6

1.8

trr

ns
-

120

Qrr

VR = 30 V, IF=lS, diF/dt = 100 A/s

Data Sheet

VR = 30 V, IF=lS, diF/dt = 100 A/s

Reverse recovery charge

41

VSD

VGS = 0 V, IF = 82 A
Reverse recovery time

ISM

TC = 25 C
Inverse diode forward voltage

0.6

05.99

BUZ 345

Drain current
ID = (TC)
parameter: VGS 10 V

Power dissipation
Ptot = (TC)

45

160

Ptot

ID

35

120
30
100
25
80
20
60

15

40

10

20

0
0

20

40

60

80

100

120

0
0

160

20

40

60

80

100

120

160

TC

TC

Safe operating area

ID = (VDS)
parameter: D = 0.01, TC = 25C

Transient thermal impedance

Zth JC = (tp)
parameter: D = tp / T

10 3

10 0

K/W

ID

ZthJC

tp = 7.4s
10 s

10 -1
100 s

DS

10 2

DS

(o

n)

1 ms

D = 0.50
0.20

10 ms

10

10

-2

0.10
0.05
0.02

single pulse

0.01

10 0
0
10

DC
10

V 10

10 -3
-7
10

VDS

Data Sheet

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

s 10

tp

05.99

BUZ 345

Typ. output characteristics

ID = (VDS)
parameter: tp = 80 s
100

0.14

Ptot = 150W

ID

Typ. drain-source on-resistance

RDS (on) = (ID)
parameter: VGS

k j
i

70
60
50
40

4.0

4.5
5.0

0.10

5.5

0.09

6.0

6.5

0.08

f g
h

7.0

0.07

8.0

9.0

10.0

d l

20.0

30

0.05

0.04

0.03
c

10

0.02 VGS [V] =

b

0.01
0.00
0

10

a
5.0
4.0
4.5

10

b
5.5

c
6.0

20

d
6.5

e
f
7.0 7.5

30

40

g
8.0

50

h
i
j
9.0 10.0 20.0

60

70

VDS

90

45

ID

Typ. transfer characteristics ID = f (VGS)

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s

parameter: tp = 80 s,

VDS2 x ID x RDS(on)max

VDS2 x ID x RDS(on)max

ID

0.06

20

0
0

7.5

RDS (on)0.11

h c

0.12

VGS [V]

80

50

24

S
20

40

gfs

18

35
16
30

14

25

12

20

10
8

15
6
10
4
5
0
0

2
1

0
0

10

VGS

Data Sheet

10

15

20

25

30

35

ID

05.99

BUZ 345

Gate threshold voltage

VGS (th) = (Tj)
parameter: VGS = VDS, ID = 1 mA

Drain-source on-resistance
RDS (on) = (Tj)
parameter: ID = 26 A, VGS = 10 V
0.14

4.6

98%

4.0

0.12

VGS(th)

RDS (on)0.11
0.10

3.6

typ

3.2

0.09

2.8

0.08
2.4

0.07

98%
typ

0.06

2%

2.0

0.05

1.6

0.04

1.2

0.03

0.8

0.02
0.4

0.01
0.00
-60

-20

20

60

100

0.0
-60

160

-20

20

60

100

160

Tj

Tj

Typ. capacitances

Forward characteristics of reverse diode

IF = (VSD)
parameter: Tj, tp = 80 s

C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1

10 3

nF

IF

Ciss

10 0

10 2
Coss

Crss

10 -1

10 1

Tj = 25 C typ
Tj = 150 C typ
Tj = 25 C (98%)
Tj = 150 C (98%)
10 -2
0

10

15

20

25

30

10 0
0.0

40

Data Sheet

0.4

0.8

1.2

1.6

2.0

2.4

3.0

VSD

VDS

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BUZ 345

Avalanche energy EAS = (Tj)

parameter: ID = 41 A, VDD = 25 V
RGS = 25 , L = 249.9 H

Typ. gate charge

VGS = (QGate)
parameter: ID puls = 62 A
16

300
mJ

260

EAS 240

VGS

220

12
0,2 VDS max

200

0,8 VDS max

10

180
160

140
120

100
80

60
40
20
0
20

40

60

80

100

120

0
0

160

Tj

20

40

60

80

100

nC

130

QGate

Drain-source breakdown voltage

V(BR)DSS = (Tj)

120
V
116

V(BR)DSS114
112
110
108
106
104
102
100
98
96
94
92
90
-60

-20

20

60

100

160

Tj

Data Sheet

05.99

This datasheet has been download from:

www.datasheetcatalog.com
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