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Generation BSP 77
Product Summary
VDS
On-state resistance
RDS(on)
100
mW
ID(Nom)
2.17
Clamping energy
EAS
250
mJ
auto restart
42
Overload protection
Short circuit protection
Overvoltage protection
3
Current limitation
VPS05163
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
C compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Vbb
HITFET
Drain
Current
Limitation
In
OvervoltageProtection
Gate-Driving
Unit
Pin 1
ESD
Overload
Protection
Overtemperature
Protection
Short circuit
Protection
Pin 3
Source
2004-03-05
BSP 77
Maximum Ratings at Tj = 25C, unless otherwise specified
Parameter
Symbol
VDS
42
Vbb(SC)
42
VIN
IIN
Value
Unit
V
Operating temperature
Tj
-40 ...+150
Storage temperature
Tstg
Power dissipation 5)
Ptot
3.8
EAS
250
mJ
VLD
50
kV
TC = 85 C
RL = 6 W, VA = 13.5 V
Electrostatic discharge voltage2) (Human Body Model) VESD
according to Jedec norm
EIA/JESD22-A114-B, Section 4
MSL 1
40/150/56
Thermal resistance
RthJA
junction - ambient:
K/W
@ min. footprint
125
@ 6 cm 2 cooling area 4)
72
junction-soldering point:
RthJS
17
K/W
2004-03-05
BSP 77
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
42
55
Characteristics
Drain source clamp voltage
VDS(AZ)
Tj = - 40 ...+ 150 C, ID = 10 mA
Off-state drain current
IDSS
TJ = -40...+85 C, VDS = 32 V, V IN = 0 V
1.5
Tj = 150 C
12
VIN(th)
ID = 0.6 mA, T j = 25 C
ID = 0.6 mA, T j = 150 C
On state input current
IIN(on)
On-state resistance
RDS(on)
1.3
1.7
2.2
0.8
10
30
mW
VIN = 5 V, ID = 2.17 A, Tj = 25 C
90
120
160
240
VIN = 10 V, I D = 2.17 A, Tj = 25 C
70
100
130
200
2.17
2.8
10
15
20
On-state resistance
RDS(on)
ID(Nom)
ID(lim)
2004-03-05
BSP 77
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
ton
40
100
toff
70
100
-dVDS/dt on
0.4
1.5
dVDS/dtoff
0.6
1.5
150
175
Dynamic Characteristics
Turn-on time
VIN to 90% ID :
V/s
Tjt
Thermal hysteresis 2)
DTjt
10
IIN(Prot)
100
300
EAS
250
mJ
VSD
1.5
Tj = 150 C
Unclamped single pulse inductive energy 2)
ID = 2.17 A, Tj = 25 C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage
IF = 10.9 A, tm = 250 s, V IN = 0 V,
tP = 300 s
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
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BSP 77
Block diagram
Inductive and overvoltage
output clamp
Terms
RL
V
I IN
1
IN
2
ID
VDS
Vbb
HITFET
VIN
HITFET
Gate Drive
Input
VIN
Source/
Ground
IIN
IDS
Tj
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2004-03-05
BSP 77
1 Maximum allowable power dissipation
2 On-state resistance
225
mW
8
175
RDS(on)
max.
Ptot
max.
150
typ.
125
5
100
4
75
3
2 6cm2
50
25
0
-75
-50
-25
25
50
75
100 C
0
-50
150
-25
25
50
75
100 125 C
TS ;TA
3 On-state resistance
250
max.
mW
1.6
175
typ.
150
VGS(th)
RDS(on)
200
1.4
1.2
125
100
0.8
75
0.6
50
0.4
25
0.2
0
-50
175
Tj
-25
25
50
75
100 125 C
0
-50
175
Tj
-25
25
50
75
100
150
Tj
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2004-03-05
BSP 77
5 Typ. transfer characteristics
16
24
20
10
ID
ID
12
18
8
16
6
0
1
14
Vin=10V
12
5V
10
-50
10
-25
25
50
75
VIN
IDSS = f(Tj)
13
A
Vin=10V
7V
max.
11
16
6V
10
IDSS
5V
14
ID
175
Tj
20
100 125 C
4V
12
9
8
7
10
6
8
typ.
3V
2
2
0
0
1
1
0
-50
VDS
-25
25
50
75
100 125 C
175
Tj
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2004-03-05
BSP 77
9 Typ. overload current
Parameter: Tjstart
Parameter: D=tp/T
10 2
25
K/W
D=0.5
15
10 1
25C
0.2
0.1
ZthJA
ID(lim)
-40C
0.05
10 0
0.02
0.01
10
+150C
10 -1
85C
Single pulse
0
0
ms
10 -2 -7
-6
-5
-4
-3
-2
-1
0
1
10 10 10 10 10 10 10 10 10
10
tp
11 Determination of ID(lim)
ID(lim) = f(t); t m = 200s
Parameter: TJstart
25
ID(lim)
-40C
15
25C
85C
10
150C
0
0
0.1
0.2
0.3
0.4
ms
0.6
t
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BSP 77
Package
Ordering Code
SOT-223
Q67060-S7202-A3
1.6 0.1
6.5 0.2
+0.2
acc. to
DIN 6784
3.5 0.2
7 0.3
15 max
0.1 max
3 0.1
0.5 min
0.28 0.04
2.3
0.7 0.1
4.6
0.25
0.25
B
GPS05560
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BSP 77
Revision History :
Previous version :
2004-03-05
2003-04-22
Page
2, 4
2, 3
ESD test condition changed from MIL STD 883D, methode 3015.7 and EOS/ESD assn.
standard S5.1-1993 to Jedec Norm EIA/JESD22-A114-B, Section 4
Humidity category classification changed from DIN 40040 value E to J-STD-20-B value MSL1
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany
or the Infineon Technologies Companies and Representatives worldwide: see our webpage at
http://www.infineon.com
HITFET, SIPMOS are registered trademarks of Infineon Technologies AG.
Edition 2004-02-02
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 Mnchen, Germany
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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