Z86L/L86L YOLONGNODINAS OUVA © seBGpiig pue sidiyn20y UO: YOUR RECTIFIER QUDERIARUET Silicon Rectifiers and Bridges 1981/1982 As 2 Arkwright Ad. Reading, Berkshire Tel:(0734) BSS768 Telex 847203, Ly VARO VARO SEMICONDUCTORvaro: the world’s leading rectifier company Varo Semiconductor is the largest producer of high voltage diodes in the United States, and is a leading ‘manufacturer of silicon recifiers, diodes, bridges and ‘multipliers for customers throughout the world, VARO FIRSTS: First to offer a high voltage diode to the televisi industry, paving the way for a "100% solid state” color and b & w chassis. First to offer a fullwave bridge in a DIP package. First (and currently, only) to offer a ful-wave bridge utiizing Schottky rectifiers in a DIP package. First U.S. company to manufacture high voltage glass encapsulated diodes. VARO QUALITY Alot Varo's manufacturing facilites are located in Garland, Texas. This enhances process monitoring and Control, leading to high product quality and reliability. Every Varo device is mechanically inspected and electrically tested prior to shipment: no AQL or lot ‘sampling. Only 100% testing. HOW TO USE THIS CATALOG Standard devices are listedinthe table of contents, and are grouped into four classifications. Find your general area of interest, then locate the specific device by page ‘number. Application Notes are listed by subject matter. HOW TO ORDER VARO PRODUCTS Phone or write/cable/telex: ‘Varo Sales Representative Varo Distributor (many of Varo's items are stocked by local Varo Distributors) ‘Varo Semiconductor, Marketing Department TERMS Net 30 days. WARRANTY The seller warrants that at time of shipment the products manufactured by Seller and sold hereunder willbe fre from defects in material and workmanship and will conform to the specications furnished or ‘approved in writing by the Seller, Seller's obligation under this warranty, however, is expressly limited to replacing, repairing, or issuing credit for (at Seller's ‘option) any products returned to Seller during the ‘schedule period shown below and i (a) Seller has received written notice within 30 days after discovery of any defect by Buyer, (b) he defective products are returned to Seller, transportation charges prepaid by Buyer, and (c) Seiler’s examination of such products discloses to Seller's satisfaction that defects in such products have not been caused by misuse, neglect, improper installation, repair, alteration, or accident. ‘This warranty isin ligu of all other warranties (express; implied, including merchantability and fitness; or statutory), and in no event shall Seller be liable to Buyer for loss of profits, oss of use, or damages of any kind based upon a claim for breach of warranty. Warranty schedule is as follows: ‘Standard Products — All products identified with an EIA number or Varo model, Series, or print number are ‘warranted for one year from date of shipment. FOB Point: Varo Factory; Garland, Texas v VARO SEMICONDUCTOR, INC. P.0. 80X 40676, 1900 NORTH SHILOH, GARLAND, TEXAS 75040, (214) 271-8511 TWX910-060-5178Table of Contents Device Part Number Cross Reference Alpha-numeric listing of Varo device part numbers. ii thru x, Representatives and Distributors North American Representatives... . 1 North American Distributors. 3 International Representatives... 6 Low Voltage Rectifiers . 9 Epoxy Bridge Rectifier 1 Amp Dual insine Bridge... " YAmp ... a a 213 1 Amp Fast Recovery... eee a 18 2Amp. eo fe ae 17 2 Amp Fast Recovery. .. 2 19 5 Amp Fast Recovery 21 6 Amp 10 Amp ..... 40 Amp Fast Recovery. 15 Amp . 30 Amp. 30 Amp Fast en Integrated Bridge Rectifiers 10 Amp . 25 Amp... 25 Amp Fast Recovery 36 Amp, 3-Phase...... 70-3 Package 30 Amp... eee : - 43 TGS BOR c icc ce rene cnr cette ea eae eee asec ee saee ears 45 ‘Axial Lead Rectifiers 3. Amp, 100 Amp Peak Surge 7 eee a a 47 3. Amp, 200 Amp Peak Surge... 49 ‘Schottky Barrier Rectifiers 750 mAmp Dual In-line Bridge . 51 1 Amp .. + 53 3.Amp.. 87 S Amp. ae 7 ae ae eeet 6 Amp, T0220 ..... : Desens i see 85 12 Amp, T0220 : eS e7, 15 Amp pee Hieaetaaee Seas eee 30 Amp... cee eee ett, ] ContinuedTable of Contents 30 Amp, Center Tapped. 7 40.Amp........ 8 60 Amp... : 8 60 Amp, Braided Lead . 8 ‘Schottky Barrler Rectifiers, High Temperature 30 Amp 8 60 Amp... 9 75 Amp... 9 High Efficiency Rectifiers 10 Amp, 70220 voces fad 20 Amp, T0220 Center Tapped <2... 2.2. eecseeeces Seg 30 Amp : a Pees 210 50 Amp SI $10 70 Amp 10 High Voltage Rectifiers. . 10 Industrial Applications Full Wave Bridge VAVB Rectifiers, 1 kV to 6 kV VG Rectifiers, 1 kV to 20 kV VF Recifiors, 5 KV to 20 KV . Assemblies for X-Ray Apparatus, 100 KV to 150 kV. ‘Subassembly for X-Ray Apparatus, 7 kV ..... ‘Assemblies for X-Ray Apparatus, 90 KV to 180 kV Subassembly for X-Ray Apparatus, 9 kV Power Rectifier Subassembly Diode ..... Power Rectifier Subassembly Diode, Fast Recovery Power Rectifier Assemblies, 100 kV to 300 kV. VC Power Rectifiers, 2 kV to 8 kV. Television Applications. pacts Pecan te Glass Passivated and Encapsulated Diodes, KV 10 15 KV : 13 Diode, 13 kV @ 2mA See eu eanae eas Diode, 13 kV @ 3mA. eee foes 13 Diode, 22 kV @ 2.2mA ‘ 14 Diode, 30 kV @ 1.5mA, : bones : : 14 Diode, 30 kV @ 600.4 7 ‘ 14 Diode, 45 kV @ 2.2mA ‘ : : 14 Multipliers. fee 151 Application Notes . IBR Installation Data : aes 15 Solving Thermal Impedance Problems, IBR. Seen ee 15 Controlled Avalanche Rectifiers 16 Cut Component Count and Improve Reliability with Controlled Avalanche Rectifiers. : 16 Fast Recovery Rectifiers .... . 16 Selecting the Proper Halt-Wave Rectitir for TV High Voltage Circuits. a 216 Design Considerations for HV Silicon Rectifiers Integrated into Flyback Transformers Han High Voltage with Low Cost Multipliers i 17 Keep Rectifiers Cool by Calibrating Forward Voltage Drop............- | a7ARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH, GARLANO, TEXAS 75040 ene eiayar ‘Varo Device Part Number Index by Page Number Varo Part Description Number Ha39 2 kV, HV Full-Wave Bridge 440 4 KV, HV Full-Wave Bridge Haat 6 kV, HV Full-Wave Bridge Haa2 B KV, HV Full-Wave Bridge || 443 10 kV, HV Full-Wave Bridge H463-3 kV, HV X-Ray Avalanche Diode. 463-5 kV. HV X-Ray Avalanche Diode. Hass 100 kV, HV X-Ray Rectifier Assembly. 487 125 kV, HV X-Ray Rectifier Assembly. 468 150 kV, HV X-Ray Rectifier Assembly. . H495-62 22 kV, HV Diode H500 18 kV, HV Diode H521 18 kV, HV Diode oe H540 100 kV, HV X-Ray Rectifier Assembly. H541 125 kV, HV X-Ray Rectifier Assembly 842 150 kV, HV X-Ray Rectifier Assembly... HESS 83 kV, HV Diode 123, Hes6 100 kV, HV Power Rectifier Assombly. .. 127 H657 125 kV, HV Power Rectifier Assembly, 127 H658 150 kV; HV Power Rectifier Assembly. 137 659 200 kV, HV Power Rectifier Assembly. 127 660 250 kV, HV Power Rectifier Assembly. 127 H661 300 kV, HV Power Rectifier Assembly. 127 H701 90 kV, HV X-Ray Rectifier Assembly H702 120 kV, HV X-Ray Rectifier Assembly H703 150 kV, HV X-Ray Rectifier Assembly H704 180 kV, HV X-Ray Rectifier Assembly H850 ‘9 kV, HV Power Rectifier Diode H1182 30 kV, HV Diode .. H1153, 45 kV, HV Diode : H1701 9 to 15 kV, HV Glass Diodes. H1802 30 kV, HV'Diode In4436 10 Amp Integrated Bridge Rectifier .. ee Pair tS IN4437 35 1N4438 35 MHO19 HV Multiplier ee peeeeeatee 7 ceeteeteeeeees 150 ‘MH920 150 MH931 150 MH932 150 MH1001 150 ‘MH1002 150 MH1003 150 MH1201 150 MH1203 150 MH1204 150 MH1209 150Description ‘36 Amp, 3-Phase Integrated Bridge Rectifier 30 Amp Integrated Rectifier, Center Tapped . 30 Amp Integrated Rectifier, Center Tapped, Fast Recovery 3 Amp Diffused Silicon Epoxy Rectifier ‘Same as V330, with Fast Recovery. Same as V331" with Fast Recovery Same as V332, with Fast Recovery. ‘Same as V334, with Fast Recovery ‘Same as V336, with Fast Recovery 3 Amp Diffused Silicon Epoxy Rectifier Same as V350, with Fast Recovery ‘Same as V351, with Fast Recovery Same as V352, with Fast Recovery. ‘Same as V354, with Fast Recovery ‘Same as V356, with Fast Recovery 3 Amp Diffused Silicon Epoxy Rectifier. 3 Amp Diffused Silicon Epoxy Rectifier HY Diffused Silicon Rector... 113 113, 113, 113 113 113,Description ‘Same as VA10, with Fast Recovery... ‘Same as VA5, with Fast Recovery Same as VAZ0, with Fast Ri Same as VA25, with Fast Re Same as VA3O, with Fast Recovery. HV Diffused Silicon Rectifier ‘Same as VB10, with Fast Re ‘Same as VB20, with Fast Re ‘Same as VB3O, with Fast Re ‘Same as VB40, with Fast Re ‘Same as VB5O, with Fast Recovery... || HV Diffused Slicon Rectifier, Fast Recovery HV Diffused Silicon Rectifier, Fast Recovery |. HV Diffused Silicon Power Rectifier Same as VC20, with Fast Recovery. ‘Same as VC30, with Fast Recovery. ‘Same as VC40, with Fast Recovery. ‘Same as VC5O, with Fast Ri . ‘Same as VC6O, with Fast Recovery. Same as VC70, with Fast Ri ‘Same as VC80, with Fast Recovery. 1 Amp Epoxy Bridge Rectifier 19 1 Amp Epoxy Bridge Rectifier, Fast Recovery HV Diffused Silicon Rectifier = 113 113 113Description ‘Same as VFS, with Fast Recovery Same as VF7, with Fast Recovery . ‘Same as VF10, with Fast Recovery. Same as VF12, with Fast Recovery. Same as VF15, with Fast Recovery. - ‘Same as VF20, with Fast Recovery. ‘Same as VF25, with Fast Recovery. ‘Same as VF30, with Fast Recovery. ‘Same as VF4O, with Fast Recovery. ‘Same as VF5O, with Fast Recovery. HY Diffused Silicon Rectifier... Same as VG1, with Fast Recovery. ‘Same as VG2' with Fast Recovery. Same as VG3, with Fast Recovery ‘Same as VG4, with Fast Recovery. ‘Same as VGS, with Fast Recovery. ‘Same as VG7, with Fast Recovery. ‘Same as VG10, with Fast Recovery with Fast Recovery with Fast Recovery ‘Same as VG20, with Fast Recovery 6 Amp Epoxy Bridge Reetifier 5 Amp Epoxy Bridge Rectifier, with Fast Recovery. . ‘Same as VH048, with Turret-Type Terminals... ‘Same as VH148, with Turret-Type Terminals. Same as VH247, with Turret Type Terminals ‘Same as VH248, with Turret-Type Terminals. Same as VH447, with Turret-Type Terminals. ‘Same as VH448, with Turtel-Type Terminals Same as VH647, with Turret-Type Terminals Same as VH648, with Turret Type Terminals Same as VH647, with Turret-Type Terminals ‘Same as VH848, with Turret-Type Terminals... ‘Same as VHO48X, with Turret-Type Terminals ‘Same as VH148X, with Turret-Type Terminals Same as VH448X, with Turret-Type Terminals ‘Same as VH848X, with Turret-Type Terminals ‘Same as VH248X" with hee Terminals ::Varo Part Number VHE701 VHE702 VHE703 VHE704 VHE8o1 VHE802 VHE803 VHE804 VHE1401 VHE1402 VHE1403 VHE1404 VHE2401 VHE2402 VHE2403 VHE2404 VHE2601 VHE2602 VHE2603, VHE2604 vuo4s, vias, vuea7 vue4a vuaa7 yaaa yea? v648 vus47 vB48 104s ‘yso4sx vut4x vse248x vuaasx vu6dsx vso4sTT vyiasTT vyue47TT yeast vuaa7TT wuaasTT wsea77T yeast vue47TT wus4sTT vutoasTT vso4sxTT, vut48xTT, w24sxTT vuaasxTT Wue48XTT Description 30 Amp High-Efficiency Rectifier... 70 Amp High-Efficiency Rectifier 10 Amp High-Efficiency Rectifier 20 Amp High-Efficiency Rectifier 50 Amp High-Efficiency Rectifier 10 Amp Epoxy Bridge Rectifier 10 Amp Epoxy Bridge Rectifier, Fast Recovery Same as VJ048, with Turret-Type Terminals Same as VJ148, with Turret-Type Terminals Same as W247, with Turret 4 Same as VJ648, with Turret Type Terminals Same as V847, with Turret-Type Te ‘Same as VJ648, with Turret Ty Same as VJ1048, with Turret Type Terminals... ps Tomas ‘Same as VJ448X, with Turret-Type Terminals ‘Same as VJ648X, with Turret-Type Terminals... 103 103 103 . 107 107 107 107 viVaro Part Number VK048 vK148 vK247 vKaa7 Description 30 Amp Epoxy Bridge Rectifier. . 30 Amp Epoxy Bridge Rectifier, Fast Recovery 15 Amp Epoxy Bridge Rectifier. 1 Amp Dual In-Line Bridge. 2 Amp Epoxy Bridge Rectifier 2 Amp Epoxy Bridge Rectifier, Fast Recovery. . Same as VS048, with Turet- Type Terminals Same as VS148, with Turret-Type Terminals Same as V8247. with Turet-Type Terminals with Turret-Type Termi ‘Same as VS447, with Turret-Type Termi Same as vS448, with Turet-Type Term Same as VS647, wit Turet-Type Term ‘Same as VS848) with TurretVaro Part ‘Number ‘vso4sxTT V8148XTT vS24exTT VS448XTT vS648xTT vsBs2 VSB53 VSB54 vsk12 VSK13 vsk14 vskst vsK32 vskst VSK51B vsKe2 vsKes vsK64 vsk71 vsk72 vsk120 Vsk130 vsk140 vskea1 vsK232 vsk320 vsk330 vsk340 vsks20 VSK530 V8K540 vsk1520 VSK1530 VSK1540 vsk3020s VSK3030S VSK3040S vskat vskg020T Vvsk3030T \VSK3040T vsk4020 v8k4030 vsk4040 Description Same as VS048X, with Turret-Type Terminals. Same as VS148X, with Turret-Type Terminals. Same as VS248X, with Turret-Type Terminals. . Same as VS448X, with Turret-Type Terminals. - ‘Same as VS648X, with Turret-Type Terminals. 750 mA Schottky Dual In-Line Bridge 12 Amp Schottky Rectifier 30 Amp 175°C Schottky Rectifier 60 Amp Schottky Rectter. 6 Amp Schottky Rectifier 75 Amp 175°C Schottky Rectifier 1 Amp Schottky Rectifier 60 Amp 175°C Schottky Rectifier 3 Amp Schottky Rectifier 5 Amp Schottky Rectifier 15 Amp Schottky Rectifier 30 Amp Schottky Rectifier 30 Amp Schottky Rectifier, Center Tapped. enna 40 Amp Schottky RectifierDescription 25 Amp Silicon integrated Rectifier 25 Amp Integrated Rectifier, Fast Recovery 1 Amp Epoxy Bridge RectifierARO SEMICONDUCTOR, INC.,P.°. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 \VARO (214) 271-8511 TWX 910-860-5178 North American Representatives ee ALABAMA ILLINOIS (Southern) Fp Inc. 206/861-9270 KEBCOs14/576-4111 P.0. Box 4286 Huntsville, AL 35802 ‘ARIZONA ‘Summit Sales 602/998-4850 7825 E. Redield Ra. Scottsdale, AZ 85260 ARKANSAS ‘Ammon & Rizos Co, 405'942-2552 P.O, Box 12274 (Oklahoma City, Ok 73112 CALIFORNIA (Northern) W.W. Posey Co. 408/746-0771 1265 Oakmead Pkwy Sunnyvale, CA 94086 CALIFORNIA (Southern) Corcoran Assoc. 219/823-4589 or 829-2425 P.0. Box 45897, Los Angeles, CA 90045, CALIFORNIA (Orange County) Corcoran Assoc. 714/848-4380 '8281 Forelle Huntington Beach, CA 92646 ‘Atention: Herman Miller COLORADO “Technology Mktg. Assoc.. Inc. 909/841-3435 P.O. Box 626 Parker, CO 80134 ‘Shipping Address: 6559 E. Parker Rd, Suite 204 CONNECTICUT ‘Comp Rep Assoc. 208/239-9762 & 239-1411 {605 Washington Ave, North Haven, CT 08473 CONNECTICUT (Fairtield County) ‘Cooper-Simon & Co, 516/487-1142 38 Middle Neck Rd. Great Neck, L., NY 11021 DELAWARE Knowles Associate 215/947-5641 1 Fairway Plaza, Suite 310. Huntingdon Valley, PA 19006 FLORIDA (OEM Mktg, Corp. 305/299-1000 1221 Lee Rd. Orlando, FL 32810 GEORGIA Fp, inc. 404/038-4958 1944 Cooledge Rd. Tucker, GA30084 ILLINOIS (Northern) .Dolin Sales Co. 312286-6200 66232 Pulaski Rd. Chicago, iL 60646 75 Worthington Maryland Heights, MO 63043 INDIANA +S Electronic Sales 317/659-1874 1187-8 S. Jackson Frankfort IN 46041 towa D. Dolin Sales Co. 312/286-6200 (6232 Pulashi Rd. Chicago,IL 60646 KANSAS KEBCO 913/649-1051 7070 W. 107th ~ Suite 160 Overland Park, KS 66212 LOUISIANA ‘Ammon & Rizos Co. 214/253-5591 4255 LBJ Freeway, Suite 251 Dallas, TX 75234 MAINE, ‘Comp Rep Assoc. Inc. 617/329-3454 100 Everett St. Westwood, MA 02090 MARYLAND Professional Rep, Inc. 301/653-3600 107 Sudbrook Lane Baltimore, MD 21208 MASSACHUSETTS Comp Rep Assoc. Inc. 617/329-2454 100 Everett St. Westwood, MA 02000, MICHIGAN ‘Amtech Representatives, inc. 919/474-8300 22725 Orchard Lake Ri., Suite 7 Farminton, MI 48024 MINNESOTA Nortec Sales, inc. 612/835-7414 4530 W. 77th St, Suite 148 Minneapolis, MN 55345 MISSISSIPPI FRop, Inc. 205/681-9270 P.0.B0x 4286 Huntsville, AL 95802 missouri KEBCO 314/576-4111 76 Worthington Maryland Heights, MO 63043, NEBRASKA KEBCO 913/649-1051 P.0. Box 4805 Overland Park, KS 66204 NEW JERSEY (Northern) ‘Cooper-Simon & Co. 516/487-1142 38 Middle Neck Rd. Great Neck, L1. NY 11021 ContinuesNEW JERSEY (Southern) Knowles Associates 21519475641 1 Fairway Plaza, Suite 310 Huntingdon Valley, PA 19006 NEW YORK (Metro Area) ‘Cooper-Simon & Co. 516/487-1142 ‘38 Middle Neck Rd. Great Neck, Li. NY 11021 NEW YORK (Upstate) Bob Dean, Inc. 807/272-2187 ‘714W. Clinton St. Ithaca, NY 14850 NORTH CAROLINA FRop. inc. 919/851-3007 7330 Chapel Hill Rd. #206A Raleigh, NC 27607 ‘OHIO (Northern) J.C. Hofstetter Co. 216/241-4880 216/725-4477 7014 River Styx Rd. Medina, OH 44256 ‘OHIO (Southern) J.C. Hostetter Co. 513/296-1010 13900 8. Dixie Dr. Dayton, OH 45439 (OKLAHOMA ‘Ammon & Rizos Co, 405/042-2552 P.O. Box 12274 Oklahoma Cy, OK 73112 ‘OREGON ‘Western Technical Sales, Inc. 503/640-4621 2271NE. Comelld. Hillsboro, OR 97221 PENNSYLVANIA (Eastern) knowles Associates 2151947-5641 1 Fairway Plaza, Suite 310 Huntingdon Valley, PA 19006 PENNSYLVANIA (Western) J.C, Hotstetter 412/927-1410 112 Skyline Ra. Piitsburgh, PA 15239 RHODE ISLAND ‘Comp Fp Astoc., In. 617/929-3454 100 Everet St. Westwood, MA 02090 ‘SOUTH CAROLINA Rep, inc. 919/851-3007 ‘7330 Chapel Hil Rd. #206A. Raleigh, NC 27607 TENNESSEE Fp, Inc. 615/475-6105 P.O. Box 287 Jefferson City, TN 37760 TEXAS. ‘Ammon & Rizos Co. 214/239-5591 14265 LBJ Freeway, Suite 251 Dallas, TX 75234 TEXAS ‘Ammon & Rizos Co. 612/454-5131 411 W. Anderson Ln, Suite 202 ‘Austin, TX 78752 TEXAS ‘Ammon & Rizos Co. 713/781-6240 3900 Chimney Rock Ra., Suite 211 Houston, TX 77056 UTAH ‘Technology Mktg. Assoc. Inc. 801/254-6410 (9468 Union Square, Suite 123 ‘Sandy, UT 84070 VIRGINIA Professional Rep, Inc. 901/659-9600 107 Sudbrook Lane Baltimore, MD 21208 WASHINGTON D.C. Professional Rep, Inc. 301/653-9600 107 Sudbrook Lane Baltimore, MD 21208 WASHINGTON ‘Western Technical Sales, Inc. 206/641-3900 P.0. Box 3623 Bellevue, WA 98008 WISCONSIN . Doli Sales Co. 414/482-1111 181 W. Layton -Miwaukoe, Wi 53207 CANADA Gantronics, Lid. 416/635-6220 1179 Finch Ave, Suite 202 Downview, Ontario, Canada M3J 261 CANADA Canironics, Lid. 514/842-1183, 3475 rue dela Montagne Suite 511 Montreal, Quebec, Canada HG 244 PUERTO RICO ‘Comp Rep Assoc, Inc. 809/832-9529 HB Miradero ~ Box 724 Mayaguez, PR 00708ARO SEMICONDUCTOR, INC. P.0. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 VARO (21a) Z71-9511 TWX 910-060-5178, North American Distributors NORTHEAST. ALLIEDELECTRONICS PHONE: (703) 696-5002 ALLIEDELECTRONICS PHONE: (617) 942.0150 40. Columbus St 25 Lowel St. Alexandria, VA 22318 ‘Wilrington, Mass. 01887 BLUFF CITY ELECTRONICS PHONE: (901) 345-9500 ALLIED ELECTRONICS PHONE: (516) 248-2960 $3339 Fontaine Ra. 400. Old Country Ra. Memphis, Tennessee 38126 Mineola, N'Y. 11501 paiea ial ALLIEDELECTRONICS PHONE: (215) 667-6940 Memphis, Tennessee 38126 {Bala Ave. Unt F HAMMOND PHONE: (919)275-6391 Bala Cynwyd, PA 19004 ELECTRONICS, INC. MILGRAY ELECTRONICS PHONE: (516) 546-6000 2923 Pacific Ave. 191 Hanse Ave Greensboro, N.C. 27420 Froopor, N.Y. 11520 MILGRAYIFLORIOA PHONE: (905) 647-5747 MILGRAYIDELAWARE PHONE: (609) 983-5010 1850 Lee Fa., Suite 104 VALLEY Wintorpark, Florida 32789 3002 Greentree IRTLANTA PHONE: (404 Executive Campus orwtoay tan eee eee ‘Marlton, NJ 08053 oma ite. MILGRAY/NEW ENGLAND PHONE: (617) 272-6800 Atlanta, Georgia 30338 79 Terrace Hall Avo. MILGRAYIWASHINGTON PHONE: (301) 468-6400 Burington, Mass. 01803 Mien Pak Lorne MILGRAYICONNECTICUT PHONE: (209) 795-0711 Rockville, Maryland 20852 sre Goeton Fost Pt RESISATCAP, INC. PHONE: (205) 881-9270 Orange CT 06477 11547 Memorial Parkway So, PIONEERIPITTSBURGH PHONE: (412)782-2300 Huntsvil, Alabama 35603, 259 Kappa Dr. Pitsburgh, PA 15238 eit SUMMIT OISTRIBUTORS PHONE: (716) 8879480 ALLIEDELECTRONICS PHONE: (312) 697.8200 nin St 1385 McLean Biv. Bute, N.Y. 14208 Elgin, linois 60121 SOUTHEAST ALLIED ELECTRONICS PHONE: (31) 5956565 ALLIED ELECTRONICS PHONE: (305) 486-0500 1961 Wayne Fd San Casa Professional Bldg, Westland, MI 48165 5440 N. State Ra, ALLIED ELECTRONICS PHONE: (612) 559-0545 #7, Rm. 24 3140 Harbor Lane Lauderdale, Florida 33319 Minneapolis, Minn. 55441 ALLIEDELECTRONICS PHONE: (404) 237-9966 ALLIED ELECTRONICS PHONE: (314) 678-1229 2964 Peach Troe Rd., NW, 415 Progress Pry. Suite 597. St. Louts, Missouri 63043, Oreeiarianpaacd ALLIED ELECTRONICS PHONE: (216) 951-0908, ALLIED ELECTRONICS PHONE: (019) 467-0720 35104 Euclid Ave. 975 Walnut St ‘Wiloughby, Ohio 44004 Cary, NC. 27511 ALLIEDELECTRONICS PHONE: (414) 469-2662. 6114 W. Capitol Dr. Milwaukee, Wisconsin 83216 ContinuedBELL INDUSTRIES PHONE: 3422 W. Touhy Ave. Chicago, Itinois 60645 DEECO, INC. PHONE: 2500 16th Ave. S.W. Cedar Rapids, iowa 52406 GRAHAM ELECTRONICS PHONE: ‘3433 E. Washington Blvd Ft. Wayne, IN 46801 P.0. Box 776 Fl, Wayne, In 46801 GRAHAMELECTRONICS PHONE: 133 S. Pennsylvania St Indianapolis, Indiana 46204 KLAUS RADIO, INC. PHONE: 908 S. Neil St. Champaign lois 61820 KLAUS RADIO, INC, PHONE: 227 Buckln LaSalle, tlinois 61301, KLAUS RADIO, INC. PHONE: 18400 N. Pioneer Pkwy. Peoria, linois 61615, KLAUS RADIO, INC. PHONE: 1008 Jersey St. Quincy, tlinois 62301 KLAUS RADIO, INC. PHONE: 451 Blackhawk Trai, Box C Elotidge, lowa 52748 MARSH ELECTRONICS PHONE: 1563 S. 101 St Milwaukee, Wisconsin $3214 MILGRAVICLEVELAND PHONE: 6185 Rockside Ra. Cleveland, Ohio 44131 MILGRAYIKANSAS PHONE: 6901 W. 63rd St (Overland Park, Kansas 66202 (312) 982.9210 (319) 365-7551 (219) 423.3422 (317) 634-8202 (217) 356-1896 (918) 223-7400 (909) 691-4840 (217) 223-7560 (319) 286-8484 (414) 475-6000 (216) 447-1520 (913) 296-8800 OHM ELECTRONICS 746 Vermont St Palatine, Ilincis 60067 PIONEERICHICAGO 1851 Carmen Dr. Elk Grove, tins 60007 PIONEERICLEVELAND 4800 E, 131st St Cleveland, Ohio 44105 PIONEERIDAYTON, 4433 Interpoint Blv<. Dayton, Ohio 45424 PIONEERVINDIANA, {6408 Castiepiace Dr. Indianapolis, Indiana 46250 PIONEERIMICHIGAN 19485 Stamiord Livonia, Michigan 48150 PIONEERTWIN CITIES 10203 Bren Ra, East Minnetonka, Minn. 55343, AM ILLINOIS, INC. 285 Eisenhower Lane: Lombard, linois 60148 RM ELECTRONICS 4310 Roger B. Chafe Dr. Wyoming, Michigan 49508 STOTTS-FRIEDMAN CO. 2600 E. River Rd Dayton, Ohio 45439, SOUTHWEST ALLIED ELECTRONICS, 6539 €. 31st St Suite 4, Tulsa, OK 74145, ALLIED ELECTRONICS, 407. ath St Fr. Worth, Texas 76102 Continued PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: (912) 959-5500 (12) 437-9680 (216) 587-3600 (619) 296.9900 (917) 849-7300 (313) 525-1800 (612) 995-5446 (12) 992.5150 (616) 531-9300 (619) 298-5555 (918) 663-7630 (817) 396-5401ALLIED ELECTRONICS 654 E-Northbolt Rd, ‘Suite 224 Houston, Texas 77060 ALTAIR CO. 15829 S. Garnett Ri, Tulsa, Oklahoma 74145, ALTAIRCO. 3101 Longhorn Biv, ‘Suite 103 Austin, Texas 78758 ALTAIR CO. 9501 Baythorne Houston, Texas 77041 P.0. Box 40313, Houston, Texas 77040 ALTAIR CO. 405 N. Plano Rd. Richardson, Texas 75080 PIONEERIDALLAS, 43710 Omega St. alas, Texas 75240 ‘SHERMAN ELECTRONICS ‘702 San Pedro Ave. ‘San Antonio, Texas 78212 WEST ALLIED ELECTRONICS 4305 Winfield Scott Plaza, Suite C ‘Scottsdale, AZ 85251 ALLIED ELECTRONICS 11901 Westminster, Unit M Garden Grove, CA 92643, ALLIED ELECTRONICS ‘3160 Alfred St ‘Santa Clara, CA 95050 ALLIED ELECTRONICS 7651 W. 41st St ‘Wheat Ridge, CO 60033 ‘ALLIED ELECTRONICS 5900 4th Ave. S. Suite 209 Seattle, WA 98109 BELL INDUSTRIES 521 S. 48th St Blog. 107 ‘Tempe, AZ 85281 BELL INDUSTRIES 8155 W. 48th Avo, Wheat Ridge, CO 80033 PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: PHONE: (713) 448-7123 (918) 252-5781 (612) 897-4490 (719) 462-2029 (214) 231-5166 (214) 386-7300 (612) 224-1001, (602) 990-9849 (714) 554-0731 (408) 727-1690 (03) 425-7144 (206) 767-572 (602) 968-7800 (909) 424-1985 BELL INDUSTRIES PHONE: 306 E. Alonara Biv Gardena, CA 90248 BELL INDUSTRIES PHONE: 1161 N. Fairoaks ‘Sunnyvale, CA 94086 .0. Box 8050, Sunnyvale, cA g4086 BELL INDUSTRIES PHONE: (6028'S, W. Jean Fi. Lake Oswego, Oregon 97034 BELL INDUSTRIES PHONE: 11900 132nd, NE. Bellevue, WA 98005 DUNLAP ELECTRONICS PHONE: 915. "B"St Sacramento, CA 95814 INTEGRATED. PHONE: ELECTRONICS CO. 496 E. 58th Ave. Denver, CO 80216 STANDARD SUPPLY CO. PHONE: 3426'S, Main St Salt Lake City, Utah 64110 P.0. Box 151250 Salt Lake Gity, Utah 64110 WESTATES ELECTRONICS PHONE: 18401 N. 25th Ave. Phoenix, Arizona 85023, WESTATES ELECTRONICS PHONE: 20181 Bahama St Chatsworth, CA 91311 WESTATES ELECTRONICS PHONE: 2001 Redhill Ave., Bidg. 3-108 Costa Mesa, CA 92626 WESTATES ELECTRONICS PHONE: 9787 Aeto Or. Suite E San Diego, CA 92123, CANADA ELECTRO SONIC, INC. PHONE: 1100 Gordon Baker Rd. Willowdale, Ontario M2H 363 RAE. INDUSTRIAL PHONE: ELECTRONICS 3455 Gardner Ct. Bumaby, B.C. V5G 47 (219) 515-1800 (408) 794-8570 (609) 241-4115 (206) 747-1515 (916) 444-8070 (909) 534-6121 (801) 486-3971 (602) 866.7525 (219) 341-4411 (714) 549-8401 (714) 292-5693 (416) 494-1666 (604) 291-8866International Representatives ARO /ARO SEMICONDUCTOR, INC., P.O. 80X 40676 1000 NORTH SHILOM. GARLAND. TEXAS 75040 ‘AFRICA — SOUTH FAIRMONT ELECTRONICS. (ery) LTD. Northwards’, 368 Jan Smuts Ave. Craighall, Johannesburg 2001 P.O Box 41102 Craighall 2024. Transvaal, RS.A. ARGENTINA REYCOM ELECTRONICA S.AL. Uruguay 6519 Floor A Argentina AUSTRALIA R& DELECTRONICS (PTY) LTD. (Melbourn Hatr) P.O. Box 206 ‘Burwood, Victoria, Australia 3125 287 Burwood Highway Burwood, Victoria, Australia 3125 P.O. Box 57 (Sydney Oice) Crows Nest, New South Wales ‘Australia 2065 AUSTRIA W.MOOR GesmoH, 1150 Vienna’ Storchengasse 1/1/1 EASTERN BLOCK EURODIA GesmbH Waldgasse 37, ‘A-1101 Vienna, Austia [BELGIUM ANO LUXEMBOURG INELCO BELGIUM S.A, ‘Avenue des Croix de Guerre, 94 1120 Bruxelles Ooriogskruiseniaan, 94 1120 Brussels, Belgium BRAZIL COSELE, LTDA, ua da Consolacao 667 Cony. 22= 20. Andar 01901 Sao Paulo, Brazil TELEX: 960-89227 PHONE: 27-11-789- 2904 TELEX: 9390-17466 PHONE: 46.1741, TELEX: 790-99288 PHONE: 288-8232 PHONE: 439-2440 TELEX: 847-195701 PHONE: 0222-85-86-46 TELEX: 847-192150 PHONE: 43-222-64.62-24 43-222-62-97-41, TELEX: 846-25401 PHONE: (32) 22160160, TELEX: 391-1121008 PHONE: 85-11-230-1733, (214) 271-8511 TW 910-960:5178 DENMARK NORDISK ELEKTRONIK TELEX: 955-5200 Transtormerve} 17 PHONE: (01) 84-20-00 2730 Herlev| Copenhagen, Denmark FINLAND, OY FINDIP AB TELEX: 057-123129 Teolisuuste 7 PHONE: 90:5052255 ‘SF-02700 Kauniainen, Finland GERMANY INDEG-INOUSTRIE-ELEKTRONIK 6780 Pirmasens Postfach 1563 Fabrikstrasse S:Germany INDEG-INOUSTRIE-ELEKTRONIK Kemnatenstrasse 66 ‘8000 Munchen 19 Germany HONG KONG cETUTO. 1802 Tung Wah Mansion 199 Hennessy load Wanenal, Hong Kong INDIA ECHBEE CORPORATION Kamer Building — 5th Floor 38 CawasjiPatel Street Bombay — 400 001 india ISRAEL MILCHAN BROS. LTD 29 Karlebach Street F.0. Box 20026 Tel Aviv Israel mmaty ELTRONIC SL. CSO Sempione 60 20184 Milano, taly Continued TELEX. 41-452269 PHONE: 49.06331-94065 TELEX: 841-5215398 PHONE: 49-089-175024 TELEX: 780-85148 PHONE: 5-729976 TELEX: 953.0115479 PHONE: 258341 TELEX. 922-341162 PHONE: 28528234 TELEX. 843-332605, PHONE: 39-2-349-2615JAPAN MATSUSHITA ELECTRIC TELEX: 781-522-8771 TRADING CO.. LTD. PHONE: (06) 282-5111 48, Andojbashi-dori 4-Chome ‘Minami-ku, Osaka 542, Japan P.O. Box 208 Osaka 530-91 MATSUSHITA ELECTRIC TELEX: 781-522-8771 TRADING CO., LTD. PHONE: (03) 435-4552 World Trade Center Btdg. — 30tn Floor 4-1, Hamamatsu-cho 2-chome Minato-ku, Tokyo 105 Trade Center. P.O. Box 18 Toxyo 105 MEXICO CONSTANTINOBOHATYREV A. TELEX: 389-170976 GetatNo, 12, Depio501 PHONE: 905-277-2480 Col San Miguel Chaputepec ‘Mexico 18,0.F. NETHERLANDS NWKERK ELEKTRONIKA BV TELEX: 844.11625 Drentestraat 7 PHONE: (31) 020-428933 1083 HK Amsterdam, Netherlands Postbus 7920 1008 AC Amsterdam, Netherlands NEW ZEALAND, DAVIO REID PROFESSIONAL — TELEX: 791-2612 PRODUCTS LTD. PHONE: 499197 3-5 Auburn St Takapuna, Auckland, 9 New Zealand CPO Box 2630 Auckland, New Zealand NORWAY NORDISK ELECTRONIC (NORGE) Box 122 ‘Smedsvingen 4 1364 Hvalstad Norway ‘SWEDEN NORDISK ELEKTRONIK AB Sanghamnsgatan 71 Box 27301, $102 54 Stockholm ‘Sweden ‘SWITZERLAND W.MOOR AG Bahnstrasse 58 CH-8105 Regensdoxt Zurich Switzerland TAIWAN ORIGINEERING LTD. P.O. Box 55-0466 Taipei, Taiwan Roc UNITED KINGDOM. (England, Scotland and ireland) GOTHIC ELECTRONICS COMPONENTS, LTO. P.O. Box 301 Beacon House 8 Hampton St Birmingham, 819 3JU, England POWER TECHNOLOGY ‘Arkwright Rd, Reading Berkshire RG2 OLT England TELEX: 856-17546, PHONE: 02-786210 TELEX: 854-10547 PHONE: 08/63-50-40 TELEX: 94552042 PHONE: 01-840-6644 TELEX: 785-26626 PHONE: 563.0578 TELEX: 851-938731 PHONE: 44-21-236-8541 ‘TELEX. 851-847208 PHONE: (0734) 666766ARO Low Voltage Rectifiers Epoxy Bridge Rectifiers 1 Amp Dual In-line Bridge "1 1 Amp ae mn Peeneee is 1 Amp Fast Recovery... 20... fae 5 2 Amp. a enact 2 Amp Fast Recovery 19 5 Amp Fast Recovery... 2 Amp... : 23 10. Amp ee “ : a 25 10 Amp Fast Recovery... ee ver 18. Amp eiiiave i 29 30 Amp... wee i Beret oe eens a 30 Amp Fast Recovery... ee 33 Integrated Bridge Rectifiers 10 Amp, "i a i 35 25Amp .. " UII 37 25 Amp Fast Recovery... ITD a9 36 Amp, 3-Phase. . fF ‘ fF a ‘TO-3 Package 30 Amp ae 3 t, Test Set. 45 ‘Axial Lead Rectifiers 3 Amp, 100 Amp Peak Surge ae a 47 3 Amp, 200 Amp Peak Surge... | 49 Schottky Barrier Rectifiers 750 mAmp Dual In-line Bridge : free TAM occ a 53 Amp. 57 BAM... 81 6 Amp, T0220... 2 65 12 Amp, T0220 67 15 Amp 69 S00 Arg eee : 73 30 Amp, Center Tapped. 7 40 Amp at 60 Amp... as 60 Amp, Braided Lead 89 ‘Schottky Barrier Rectifiers, High Temperature 30 Amp. ; : 3 60 Amp Wneauenupaaminet ipa TL 95 75 Amp. 97 High Efficiency Rectifiers, 10 Amp, T0220 99 20 Amp, T0220 Center Tapped 101 30 Amp fee pee : 22403 50 Amp : awe TINT y0s 70 Amp an 107\VARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 vane (214) 271-8511 TWX 910.60:5178 [DDB 1ampDualtnLine Bridge va series 25V, SOV, 100V, 200V, 400V, 600V, 800V and 1000V Vsay, Ratings 25 Amps Peak One Half Cycle Surge Current Glass Passivated Diodes ‘Standard .10” —2,54MM Dip Lead Spacing 2Dibs Will Fit Into Standard 14 Pin Dip Socket ‘Moisture Resistant Epoxy Case ‘MwoMUM RATINGS (at Tar2s'C unless otherwise noted) | SYMBOL | vMo8 | vase | vM2e | vise | ves | vies | vMi08 | UNITS DC Blocking Votage Vin Working Peak Reverse Vottage var | 80 | 100] 200] 400} coo | 200 | 1000 | vote Poak Repattve Reveres Voltage Vin Riis Reverse Votage Vane [85 | 70 [140] a0 | 90 | S60] 700 | vate Peak Surge Current, ¥ Gycie at €0 Hz (non-6 and T, = 40°C (Fig. 2) Sve = aoe: Peak Surge Curent, | s0e at 60 Faz and T, = 40°C (Fig. 2) mw | Be ame fog Forward Como a T= 00°C (Fi. 1 i ‘amp Tampere Range To Tae seanene . Max. Soierig Temperature ta aie. [ELECTRICAL CHARACTERISTICS (At Tg=25°C unless otherwise noted) ‘SYMBOL| a ‘Maximum Inslantaneous Forward Vol Drop (per diode) at 1 Amp (F dred Vine 12, Volts: tn 30 os WMaxmorsRovrse Caen! por doe] at Fialod Vinwand T, = 125°C (Fig. 4) hae 0s mA LTR [INCHES | MILLIMETERS A |— a7o.s00 | san7 | 200-200] 708.19 c_[ 200-260 | 610550 D_[—aF0- 090 | 025051 a F—| seo Max 5 OX a[— oI Ta ee J cs T . yo m ane” Ww | o 1"Dc ORD COMET & Loa ren sPATEN sv Taree AME. OTE CHR J ' 1 wor @ ee eee od i Bea es Mona +s Wt ee 8 cies | 3 ‘ent EE LE he be pes cor PF | | ge a H/ p 2 aol = | \ - | 29 co = [C, = 180° Conduction Argh (esse Loe] " = deanna aL lo al ° oe oar oa eae oT satu BATU 1 roo conan na as) seam rox come msn es preset ead "eso tame / [nn ee 0 FRWO CURRENT, 4) HO SEE CRBENT OVE I MES) 6 1 1 nee oF OLS a 6D He PCL stars Fen YLT rane» Tag 8 00 Ve RS) amor swaon rr Site atime ae BSE CUREMI ent TMP. 10) 12 01001 wo Secondo Spcteons mijetocnange wih nt‘VARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH, GARLAND. TEXAS 75040 vARO (214) 271-8511 TWX 910-060.5178 EE: 1AmpEpoxy Bridge Rectifiers _vEseries Controlled Avalanche Series with 250V, 450V, 650, and 850V Minimum Avalanche Ratings Non-controlled Avalanche Series with 25V, SOV, 100V, 200V, 400V, 600V, SOOV, and 1000V Van Ratings Glass Passivated Silicon Chips anima BANGS TA-256 | srmmar | EOTROULED TOR SORTS oar unless otherwise noted)” _ AVALANCHE AVALANCHE ‘Series Number vez | vea7] veer | veer | wo | veoe | vere | vezs | vews| ves | vere | veron| (DC Blocking Voltage Vem T pean eevee | | | cn [am ae | oss | locos a Rimcatctee de Wa here o eee [eo [ ae [aa for [La fc fa fae ewe fra Power Dissipation n Van) Revlon for 100 1s Square Wove bad “ ware omens: 7 Region at Ty = 65°C ' ™ beoaee TE eae (Non-Rep) at Ta = 65°C (Fig. 2) oe eee atop Cove me AEP 7 : Ta = 65°C (Fig. 2) sisal suit iemccaataaren fe 7 mr| SS aeiioe er con Oo as 7 r5 SS maces Rae | oncom (AtT,=25°C unless otherwise noted) [SYMBOL] “AVALANCHE WVALANCHE Keamdl ee rane aw nom [ee mem SS aa seo for me = onan nae vee a ar ft m van eee 7 VRB S SST en [vem 2 = een 7 aan ROTO Vw at T,= 125°C (Fig. 4) Name ‘500 A So = 7 eras “| Nip — A 185-.215 4,70-6.46 al Be caress gas aae ft << Baie ioepatel aus a il y Sle ean s ecuar $ c_| 022-020 o1. | 860-711 00 13DC FORWARD CURRENT PEAK SURGE CURRENT (PER LEG) VS NUMBER OF VS AMBIENT TEMPERATURE CYCLES AT 60 Hz (SINE WAVE INPUT) AND T, = 65°C 20 2 100) z g 3 zu i 2 = 3 210 20 3 3 = os] g : iy 2 0 2 1 100 120140 160. 1 0 ‘© 100 AMBIENT TEMPERATURE, T, 0) NUMBER OF CYCLES AT 60H FAGURE 1 icone 2 TYPICAL INSTANTANEOUS FORWARD VOLTAGE DROP REVERSE CURRENT V9 wNCTION en ves 1000 pemaNPERATURE AT 06 BLOCKING VOLTAGE 7 VS FORWARD CURRENT = 100 3 2 2 g = i zo s ese i ge 3 3 g g 3 z i z 3 = Boa = 2 4 6 8 1012 14 16 18 20 ° sore 00 as INSTANTANEOUS FORWARD VOLTAGE. V,. iatamemiente FIGURE 3 (VOLTS). PER LEG Figure 4 “oars tt at tif tS be wt] teem | T 1 14. © 100 ve semantic, Spectcnene jec cange ws neARO SEMICONDUCTOR, INC. P.0. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 ARO (214)271-8511 TWX 910-860-5178, E [2&2 1AmpFastRecovery Time Epoxy Bridge Rectifiers 200 Nanosecond Reverse Recovery Time 50V, 100V, 200V, 400V, and 600V Vaz Ratings Glass Passivated Silicon Chips sun am ee ee eee (DC Blocking Voltage, View ar (Non-Rep) and Tq = 40°C (Fia. 2) irom ceil net ae Praag 80 t0 +138 °c a | = p=] eS (At T,=25°C unless otherwise noted) ‘SYMBOL UNITS Maximum Invantaneous Forward Volage = i Trans Amp (Fig. 5} 1 ae meee ee - : . Vase at Ta = 125°C (Fig. a) tam tae ——eonaaliel apes oo = Se ' Cc 4,83-5.46 - D 1.0 MIN. (26.4 MIN. 150c FORWARD CURRENT PEAK SUAGE CURRENT (PER LEG) VS NUMBER OF VS AMBIENT TEMPERATURE CYCLES AT 60 He (SINE WAVE INPUT) AND Ta = 40°C 20) ge 100 g ME z | z es ae i 2 oases & : oars tasene a 4 ae mars 27 3 A 5 e 05] 3 ol_1 zy 0 2 0 «660 «8100120 140 160 qv 10 100 AMBIENT TEMPERATURE. T4 (0) Numan OF C¥CLES ATO He FIGURE 1 FIGURE 2, TYPICAL INSTANTANEOUS FORWARD VOLTAGE enn SUT Vt we DROP (PER LEG) VS DC FORWARD CURRENT 10.000 = 20 3 £ 109) 1009 = z 5% az 4 3 z F soo Bot : = 3 oO 3" 3 i Z 001 nal z 2 8 o aI 28 ‘50 78 128 eek JUNCTION TEMPERATURE . T, 0.405 06 0.7 08 09 10 11 12 13 Bs TYPICAL INSTANTANEOUS VOLTAGE DROP FIGURE 4 FIGURE 3 (PER LEG) Vey (VOLTS) anion = co ‘TYPICAL RECOVERY TEST CIRCUIT ‘SEE PAGE «5 FOR DIAGRAM rune COC ss mmo 16 «190 ve emlcndutr Soncteabne nc charge wot rete,\VARO SEMICONDUCTOR, INC, P.O. BOX 40876 1000 NORTH SHILOH, GARLANO, TEXAS 75040, vano uayaricesnt TWX O10 080 5178 — Ter EE [S32 2AmpEpoxy Bridge Rectifiers —_vsseries ja Glass Passivated Silicon Chips Controlled Avalanche Series with 250V, 450V, (650V, and 850V Minimum Avalanche Ratings Non-Controlied Avalanche Series with SOV, 100V, 200V, 400V, 600V, 800V and 1000 V Vp Ratings ‘50 Amps Peak One Half Cycle Surge Current MAiNUM RATINGS SONTROL SONTAOL TRS CM aero noms) evmsoe| — RATA water en| [Sever nore ‘vs2e7 [vsea7] v56e7] vee: | soue] vores | venue [vseee [vsceo] vases [vsrou OE Bing ate van vtng Poe eve Voto Vim | 200 | a0 | cao | 00 | sa | 100 | 200 | 400 J 00 | a00 } 100 | vn Dt Retne ve te vin 4 TE Ree Vee mun [0 [00 Joao [seo [95 | 70 [eo 0 [oro [ooo |e [on mami ro ™ ™ ve Conte Pores Davin Van) sono Somme va 1 na is Moore tNon shone 60°C (Fin 2)__| trem 2 aoe Feat Srge Cre iar o 60 Hea Ta7 GO°C (Fig 2) ‘raw - ita | fg Fomad Gwent ta 6° a HH [6 z Ta Tencion Opa dStore Terawtoe Rane | Ts, Tove enw ec acre Saay Terps 8 Tne ioe a 25°C arg m e [aes Sanaa, onmoues | N-CONTROLLED AtTac2sCuniess oterwias notes) [SYMBOL SOATARCHE MOINALANCHE jr ‘Series Number we [var [wr] vsou | vsou vera] vse | vseus [vseas] vssas] vsi00| nny Ane Vane Vina [so [aso [so | oso ma fe Soeraaismeren [vw 1 on akirum ee Cutt Fle Vn ‘a . A =e nw as aay Coarse Rance ace a] Pars Non 5247, VS447, VS6A7, VSBA7,VSOAG,VSTA, VS24, VEAA8_ VEGAS, ona VSBAB have ee ecognred une’ ihe Compongn Paya Unaware Labrnre te tae oa INCHES: MILLIMETERS. se slt | a an aa 1044-1120 tt 3) aoe beard : | tree 28-4208 = 0 | xs 149-775 beg | ar-oeoe e000 r ‘otn tae & | wea secsat 7OC FORWARD CURRENT VS AMBIENT TEMPERATURE ewer wiih No, 20 [AWG lor larger copoe| | o. 0 © © % i 1% 140 160 AMBIENT TEMPERATURE, T, (°C) FIGURE 1 ‘OC FORWARO CURRENT. 1p, (AMPS) TYPICAL INSTANTANEOUS FORWARD VOLTAGE DROP (PER LEG) VS FORWARD CURRENT 10.0 INSTANTANEOUS FORWARD CURRENT, | (aus) 2 6 8 10 12 INSTANTANEOUS FORWARD VOLTAGE: V, rioure3 -»«(VOLTS). PER LEG 14 1.6 1.8 20 4 ss Zool FIGURE 5 18 10 re Samco Sacto et change we tin Vesa. (AMPS) PEAK SURGE CURRENT (NOW.AEI PEAK SURGE CURRENT (PER LEG) VS NUMBER OF CYCLES AT 60 Hz (SINE WAVE INPUT) AND T. = 60°C v 10 NUMBER OF CYCLES AT 60 Hz 100 FIGURE 2 1009, REVERSE CURRENT VS JUNCTION TEMPERATURE AT DC RATED VOLTAGE os MAXIMUM REVERSE CURRENT. gy: 44 AD 0 as~C«OCS~S~C«NOOSC SO FIGURE 4 JUNCTION TEMPERATURE. T, (2c) T LSARO SEMICONDUCTOR, INC.,P.0. 80x 40676 1000 NORTH SHILOH. GARLAND. TEXAS 75040, vaRo terarasrt tax oroceosi7e E[&E& 2 Amp Fast Recovery Time Epoxy Bridge Rectifiers A 200 Nanosecond Maximum Reserve Recovery 50V, 100V, 200V, 400V, and 600V Vara Ratings 35 Amps Peak One Half Cycle Surge Current tat Ta=28'C unless otherwiae notea) | SyMaoL | vsossx | vstasx | vsoeex | veaex | vsesex | unTs 26 acing Vaio Vane ‘okig Pte Revere Votage Vane | 50 woo | 200 | 400 | 00 | vars Peat Rapin Rave Vie vient a Revers Volpe Vrvnwsi | 36 70 wo | 80 | ao | von Peak Surge Crrer, Y Gyle nv Re z (Nonapl snd'Ta > 45°C (ri 2) ‘rom 7 wos ak Surge Gurren tw. at 60H ; Sna'Ta “45°C (Fg. 2 ipa 6 Amos 7 ora Great. vo 2 ao Zc peng ot TaTsre 80100138 *e Mannan Galdng Torsone Te footed ELECTRICAL CHARACTERISTICS (AtT,=25°C unless otherwise noted) | SYMBOL veers Maxima Intanianeos Fornrd Vote Vow Drop (Per Diode) st 2 Amps (Fig. 3) vem _ Leg Tisirun Rees Recovery Tine, Ip = 1 Amp, Ip =2 Amps (Fig. 6) hl 200 eee Masinum ern Cut at ated Vag. ‘nu 0 a ‘asin Revove Gant at Red matter ‘ra ’ a TnwinionSrength From Greitt Gua (mind 000 Vou 0 Part Nos. VSOABX., VSIABX, VS248X, VS448X and VSGABX have been recognized under the Component Program of Underwriter Laboratories, ne 7 ct ut | ches MILLIMETERS a | an aer Tose 1120 8 | s00~ ‘610 1499-1549 cc | 37-167 01, | 948 -4.24 0 © | 295 ~.205 7497.75 © | 037—o430— | 94-1090. . 10 Mia, 25.4 Min, 6 195 205 495 ~ 5.21 19DC FORWARD CURRENT VS AMBIENT TEMPERATURE 0¢ FORWARD CURRENT, I, (AMPS! PEAK SURGE CURRENT (PER LEG) VS NUMBER OF CYCLES AT 60 Ha (SINE WAVE INPUT) AND Ty = 45.C 109) 35) 1 | o 2% 0 6 © 100 i2 140 160 AMBIENT TEMPERATURE, T,('C) FIGURE 1 TYPICAL INSTANTANEOUS FORWARD VOLTAGE ‘OROP (PER LEG) VS DC FORWARD CURRENT 20 _ 10 & 2 zor 200 001 0405 06 07 08 09 10 11 1213 ‘TYPICAL INSTANTANEOUS VOLTAGE OROP IPER LEG) Vj. (VOLTS) FIGURE 3 ear FIGURE 5 rm cocoa 20 + 101 Wr SamcanductrSpsteatons sibet change mite oie, PEAK SURGE CURRENT (NON REP), lsu. (AMPS) 10 NUMBER OF CYCLES AT 60 Hz FIGURE 2 REVERSE CURRENT VS JUNCTION noo TEMPERATURE AT DC RATED VOLTAGE 3 3 3 3 JUNCTION TEMPERATURE. T). (26) FIGURE 4 Tecra Senden "TYPICAL RECOVERY TEST CIRCUIT ‘SREPAGE ASFOROMGRAM ame AL/ sere FIGURE 6 FOR TYPICAL MOUNTING DETAIL soe page 18\VARO SEMICONDUCTOR, INC. P.0. BOX 40676 1000 NORTH SHILOH, GARLAND. TEXAS 75040 wane sii aa sone EE(E3[2 5AmpFast Recovery Time Epoxy Bridge Rectifiers 200 Nanosecond Recovery Time for 35, 70, 140, 280, and 420V RMS Operation 5 Amps DC Forward Current At Tyg = 60°C 65 Amps Peak One Half Cycle Surge Current 2000 V Minimum Circuit-to-Base Insulation Glass Passivated Silicon Chips MAMON TTR. canes nwa | SYMBOL | Vnowex | vivax | vizeex] vaesex [nose 1 Bcking Voip Vee Morin ese Rev Voge vm | so | wo | 2 | 40 | 600 Feat Peowtine Reve Voge vant MS Rev Vote vainws | | 7 | wo | mo | «0 oak Surge Caren, Gy w GORE we ; = Trs"60°C (Non-Rep) (Fig. — ook Sure Curent, ¥ Ss 9 ra ; a THg"60°C (Non-Rep) (Fig. 2) stead ‘0 Fores Cort ; ; Tso fo rcion Sorat end rae Ta Tara “201138 *e aso S509 Tenpeate Tine aseana nae ELECTRICAL CHARACTERISTICS = (At T,=25°C unless otherwise noted) SvmaoL unis, Maxima ntntnao Forward Volngs Drop Aber diode) ot te=5 Amps (Fig. 3) Vow - oo Marien Revo Recovery Tine wo Inst Amp, Iq=2 Amps (Fig. 4) wv baa Macnum e Rew Curent «Fated Vang | a 7 ie Maximum OC Raver Curent at Rated Vana : a ma wary nm Inmlton Start om Getto Gn tind 200 vate 96 Prt Nos HOAX, VHT4BK, VH24BX, VHAABX ard VHGA hve een ecipitd ude he Gargonen Poyrom of Unsere Laboratories i Tra] —WWeHES: tT i nes. aaa te7om e | nea & | Beg 8 | Bike A £ | toe (eemae] & | Sn Pos. . H 195—,205 a0c FORWARD CURRENT VS TEMPERATURE . oe 2 a B° a re oasF oa ay =? [oevite wienfvo, 2] 2 | aked erage & | | Sender eon 8 a aad ° o 0 wo #0 10 0 140 1 TeWPERATURE, 0) igure 1 ‘TYPICAL INSTANTANEOUS FORWARD VOLTAGE [DROP (ER LEG) VS DC FORWARD CURRENT 100 == — z z Dc FORWARD CURRENT, & on 0 02 04 06 08 10 12 14 16 18 20 22 TYPICAL INSTANTANEOUS FORWARD VOLTAGE DROP (PERLEG) Vey (VOLTS) FIGURE 3 z oc FIGURES 22 on wo taiconuetar Secon ita charg woe PEAK SURGE CURRENT (PER LEG) VS NUMBER OF CYCLES AT Tyg = 60°C AND SINE WAVE INPUT PEAK SURGE CURRENT (NON-REP), ra 1 r wo 100 NUMBER OF CYCLES AT 60 He rroune 2 RECOVERY WAVE FOR FIGURE 4 TIGA. AecovERY TET cRcUT Se ace 4s FOR OGRA “i cisco ene ave T = | 4 ——| a 2” + own reset & sa 3 par esr 3 | : ee El aaa tn gt \ eat tare hae d | te te Crate covacion aS FIGURE 6YY ARO SEMICONDUCTOR, INC. P.0. BOX 40676 mn 1000 NORTH SHILOH. GARLAND. TEXAS 75040, VARO (214) 271-8511 TWX 910-860:5178 ES 6 Amp Epoxy Bridge Rectifiers vitSeries fe Glass Passivated Silicon Chips Controlled Avalanche Series with 250V, 450V,, 650V, and 850V Minimum Avalanche Ratings Non-Controlled Avalanche Series with SOV, 100V, 200V, 400V, 600V, 800V, and 1000V VaR Ratings 100 Amps Peak One Half Cycle Surge Current MAKIN RATINGS svmoo. | conTRoLLeo NON CONTROLLED IAT Tqt25 nen Othe Spec “AVALANCHE /AVACANHE Votan. naw | 200 | 400 | 600 | soo | 50 | 100 | 200 | a0 | 600 | 800 | 1000 | von RMS Reve Voane Va wens | 0 [200 [ero [s60 [as | 70 [40 [290 [azo [60 | 700 [vom for t00 pace Sause Ware Poe ‘0 na wo Canine Pon Disoatonin Views Reson | : a" Fung Oa a amr) ee | Peak Suge Guan Gao = i B60 ie Non Ren soo Te 80°C tw 2) __| ste we Peak Suro Current eo 6D ra Sopra ‘em % ae Pg Fava Curate = 076 Fe ve @ oo neton Ope ang and Stove Tempers Rane [Ts Tava Bore 150 *e Taxes ere dhe Deena a 56 ELECTRICAL cHARACTERISTIC convnouieD wow conrnouitD lowed AUT = 25°C (Unie Other Sct) svmaou | fAvaLAncne AVALANCHE Sees Numba irae [veer [weer] ve ovis] wna] vane] ves [aio vase or Mu Avani Vo Vien —[2s0 [aso [50 | oso a ere Menno Avance Vola Views] 100 [ 900 [1100-[7900 ne Fv Diep ow cae at ames rg 9 vem a ts Moun Re area a : oe ated 356 ‘a 10 7 “rslaton Stengin From Gna to Gove tn) 706 = Part Nos_VH247, VH447, VHGA7, VHBA?, VHOA®, VHIAB, VH248, VHA4B, VHEAB, and VBA have been secoynited under the Component Prowam of LTR] INCHES MILLIMETERS ont a aaa Yous 112 8 S90 510 499-1548 c 437-1678 348-4240, ° asa 749-775 e 97-9808 94-109 F 0k maim. me 6 195-6 ass-5arie 10¢ FORWARD CURRENT cans) ‘OC FORWARD CURRENT, | 2 e DC FORWARD CURRENT PEAK SURGE CURRENT (PER LEG) VS VS TEMPERATURE NUMBER OF CYCLES AT 60 Ha - = 6 5 ‘ - s 3 2 : a 79) y 3 1 aren a i x 0 1 ‘ eon 0 2 4 «6 8100120140160 1 10 0 100 TEMmeRATURE Ch NUMBER OF CYCLES AT 60 He FIGURE 1 2 REVERSE CURRENT VS JUNCTION TEMPERATURE AT DC BLOCKING VOLTAGE TVPICAL INSTANTANEOUS FORWARD VOLTAGE [DROP (PER LEG) VS DC FORWARD 10 10 a 01 1 oo 0 an 0 2 5 1 10 125 180 fed JUNCTION TEMPERATURE, T, 4 05 06 07 08 09 10 11 FIGURE 4 TYPICAL INSTANTANEOUS VOLTAGE OROP, Vs (VOLTS) FGURE 3 “— | pena wt 4 FIGURE § FIGURES BE orn iia 120 vr Smid, Secon it chrge wenARO SEMICONDUCTOR, INC.,P.0. BOX 40676 1006 NORTH SHILOH, GARLAND, TEXAS 75040 Sine 2. ‘VARO (214) 271-8511 TWX 910-860-5178 E[=[— 10Amp Epoxy Bridge Rectifiers se ee 10 Amps DC Forward Current at Tc= 80° C 100 Amps Peak One Half Cycle Surge Current 2000 Volts Minimum Circuitto-Case Insulation Glass Passivated Silicon Chips , MARIWUM RATINGS compa woueraam Lad (AtTasaeCunlessotherwice noted) |eywpol] CONTROLLED econ lon Sees Nobe ay 1s 8a al BRAT AEP AR n tch STOR DC Blocking Vahone Vn Morning Peak Reve Vota Wom {200 | 400 }e00 {200 | so } 100 |200 |0 {soo | ao0 | 1000] vars Peat Repetnve Reve Vooe vee RMS Reese Vora Vn a0 [280 [azo 560 [35 [79 [wo [oad [oxo [oso [700 [vor ove Dsaton n Vinny Ran or Dz oa we na Serve oe Poe Dana Vn Ra wa at To BOC (Fig. 2) atrtt i kia Zi ~ bed Feat Sipe Cert 17 Opao Oo ; a ra goer a a Fear Os z 2 og Pak Suge Cuenta HE bad Te TTA rae = rs Fon toners Canon aT =O ve 10 = ‘ensign Opera ana Storage Tener Rane, Taval “soe 180 Manu Sens Tepe & Tine rr ELECTRICAL CHARAGTERISTICS conmeues ancora {At T,=25°C unless otherwise noted) psymect| — SAVALANCHE AVALANCHE INITS| Ses Nome areas jc ia ize eee Min Avlnche Vota 20 | 420 | es fest. NA vas Aarimum Arle Voto. View [700 [200 100 f 1200 WA fare Aria taraneout Fowara Vaoe : yan Drop (per diode) at 10 Amps (Fig. 3) Vew _ Lea ‘avn Ree ro Ftd Vg nm . m Tonia Ravene Coven ot Rated Vigat T)= 125°C tae aa ma Toslation Stengh From Creu 0 Ge tin) 0 hae Trimm Thema esac : Junction to Case ‘Onc - pow um] incues | mnumerens - = ‘ .137-.167 Dia. 348-424 Dia, Fie ¢ | ana wate + oH c 590-610 1499-1549, > | dasa M3778 4 E 087 22 4, Hu F | oso easa3s | G 038-042, 970-107 4 h | tome 240 a, sia ' 195-205 4955.21, 25bc FoRmaRo CURRENT VECASE TEMPERATURE 2 7” 28 Bs 8 a4 g2 ° o.oo & 8 100 1 10 16 (CASE TEMPERATURE, Te. (0) igure 1 ‘TVPICAL INSTANTANEOUS FORWARD VOLTAGE ‘nor ih CECI VS SC FORWARD CURRENT z 3 o 002 Of 06 08 10 17 14 16 TYPICAL INSTANTANEOUS VOLTAGE hemes (FOP Vy, (VOLTS! 26 © 100 wo semontuctr Spactzabone eon who 18 20 PEAK SURGE CURRENT (PER LEG) VS NUMBER OF CYCLES AT Gols AND 1. gp - 2” 2 8 an] a) Pa) 0 =» 2 0 = r 19 00 NUMBER OF CYCLES AT EOHE ure 2 REVERSE CURRENT VSUNCTION TEMPERATURE AT OC BLOCKING VOLTAGE 1000 = 7 100 ee oo 75 10 12 10 JUNCTION TEMPERATURE, 1 Ci FIGURE 4 Fidel 1 FEY {ttc tei, | eee | FIGURE 6\VARO SEMICONDUCTOR, INC. P.0. BOX 40676 1000 NORTH SHILOM. GARLAND TEXAS 75040 : vARO (are) zrvesit Twx o1oee0 sire EE([=3[= 10Amp Fast Recovery Time Epoxy Bridge Rectifiers pat 200 Nanosecond Reverse Recovery Time 10 Amps DC Forward Current at Tc= 60° C 75 Amps Peak One Half Cycle Surge Current Glass Passivated Silicon Chips MAXIMUM RATINGS (at Tq=25°C unless otherwise noted) symeot | viosex vassax | vsesex |unrrs| 1¢ Blocking Vota Tv Morsing Peak Revers Vatae, Vie 0 ro | 200 | 400 | 600 | vows Pod Rope Reve Ve, Vans MS Revere Vote Yama) | 28 7 | wo | 20 | «0 | vom ak Sura Curent, Gye a a '60 He Non Repl and Te=60°C (Fig, 2) heal : i ie Peak Surge Currant 1 sec a 60 He and Te“6O°C(Fi9.2| IFAM 2 amos ‘Forward Canale = 60 9 1) lo 10 fe Junevon Opering a Storage Temoarture Rage, |. Tere ~s90 +138 Mac Sere Trai Tine 10 Seca a 2676 ELECTRICAL CHARACTERISTI (at Tq=25-C unions otherwise noted) sywpo. | = : unrrs Maximum Istantnsou Forward Volpe 7 cs Vor rope hoe) wt Amer Fi 3) rm Ce Maximum Reverse Recovery Tine, 55 = Ie amp, tq? Amp 5-6) " Masi Reve Curt Rate Vn ‘a 10 ua Taximam Reve Curent ot i ; Rated Vou at Ty 125°C. ™ oe Insulation Strength From Greit 0 Ga (min) wn os Fr Ne VOB VA, V0, VB ae VRB recognized unde fw ce Tecra ogi ol Underwies Labortoes, ne 4 aT tH t fe Yt uma | _inches MILLIMETERS, cI » | 197.1670 | 3484424 00, did ef ana vast 20 ek & | Soot Mangas ¢ | dos yao778 ele e on 32 wl F | asosio aan i958 ' & | boon ‘70107 ee | Sonn 28.40 Wn 1 f | tostaos rete a0c FORWARD CURRENT YSCASE TEMPERATURE 2 z 0 28 zs 2 _ | case rewrismensunco 2 4 | Sttmcwounting exo 3 4 Foouaron wove | erween me ouren coce 8 | Anotmencuntna nove eoce 3 2pr ° o 2 4 60 % 10 1% 140 160 ‘CASE TEMPERATURE, Te, (C) FIGURE 1 ‘TYPICAL INSTANTANEOUS FORWARD VOLTAGE ‘DROP (PER LEG] VS.0C FORWARD CURRENT DC FORWARD CURRENT. to. AMES) TYPICAL INSTANTANEOUS. VOLTAGE cure 3 DROP Vp, (VOLTS! a9 O02 04 06 08 10 12 14 16 18 20 22 oa J spine Nes FIGURE 5 28 © 18 vr Semondut Species niet charge nin tee PEAK SURGE CURRENT (PER LEGI VS NUMBER OF CYCLES AT 6OHs AND 1. 6° 8 8 ssszes PEAK SURGE CURRENT (NON 8 10 zg aI T 10 NUMBER OF CYCLES AT GoHt FIGURE 2 ee "AT RATED. VOLTAGE REVERSE CURRENT. |p Gut) JUNCTION TEMPERATURE. 1%) FIGURE 4 RECOVERY WAVE FORM Recovered rr ‘TYPICAL RECOVERY TEST CIRCUIT Conduction “SEEPAGE 45 FOR DIAGRAM a FIGURE 6 FOR TYPICAL MOUNTING DETAL, se page 26ARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH. GARLAND. TEXAS 75040 VARO (214) 271-8511 TWX 910-860-5178 EE[=3[= 15 Amp Epoxy Bridge Rectifiers viseries eae 15 Amps DC Forward Current at T= 80°C 100 Amps Peak One Half Cycle Surge Current Externally Exposed Copper Mounting Pad for Low Thermal Resistance 2200 Volts Minimum Cireuit-o-Case Insulation MARION RATINGS L, ZonrmoueD NON-CONTROLLED ae (At Tae 2s'C unles otherwise noted) vusot| RALANCHE AVALANCHE Series Number Witar | vine [wean icone cnalaasafonap al OC Bloetns Varo Va Working Peak Reverse Votage, Vem | 200 | 400 | 600 | 50 | 100 | 200 } 400 | 600 | 800 | 1000 | vos eon Rete vee Voraie nau iS Ree Votoge frames] 0] eo [ao] a5 | 70 [vas | ao [a0 [oa | 906 [wore fone Dvn in Vig) Pain 100 Pras 600 NA Werte ‘Continuous Power Diipation im (BR) Reson Pa ‘ Na aTe- sere Peak Surge Curent, Gvele ot 60 He, Non-Rep) |, aaa ond T= 80°C (Fi. 2) rm iid = Peak Surge Curent Tae 60 Weand Te=@0°C (Fi af tran 30 oo ‘Avg Forwré Coronal T.= 80 (Fo 1) to 5 ramon [ve Forward Curent T= a0 (No Hat Set to z 5 ‘Ane Juneton Operating and Storage Temperature Range |), Tsa| =e is ee Foon Ont ‘a 7a] ELECTRICAL CHARACTERISTICS ‘CONTROLLED NON-CONTROLLED SYMBOL AVALANCHE "AVALANCHE vars Series Number vive] veaar]| visa? [vipadvcadlviaad asalvcsadfraaal cio] Minimum Avalanche Vola, Vier) | 250 | 450 | 650 ha vor ‘Maximum Avelanehe Votoge Vier | 700 | 900 [100 NA Volts ‘Maximum Istontaneovs Forward Votage| 7 a Vous! Drop fer diode) at 15 Amps Fg. 3) rm tee ated Ving ot Ty = 40°C, (F194) ‘ane G ay Maximum Revers Gurren at ; : n Rated Ving st Ty = 175°C (Fg 4) ee “ Tesultion Stength From Cireit 1 Gas Gwin) : 7200 ver Maximum Thetma Resstines nction to Case | Rea 15 cw eoognaed Under Components Program of Unsere Laberatne. ne ua] INCHES MILLIMETERS oma A | He2-168 Ow 411-427 Ow wae 8 | 345358 00. 76-902 Do igen ot | ce | “scart eaeane ree ime © | sae t8 tye abt-a01 Wr. ‘morgan | “aecaanyo 9665-1087 W. ee F | 245-265 Typ. 622-648 Typ. 13.050 faces ce Heat Cant poate 2159-2281 Severe | Fecresaue 1930-1981 Sere V1 gion aaa tye 76-86 Tv. 1 | Soecat 229-279 @, | | « 268-1087 = t 757-7482 i 19.06 er.0c FORWARD CURRENT VS CASE TEMPERATURE 1 : Zs = oa 3 °|caberewris weasyneo 8 ON THE MOUNTING BaD <6 $ ORE AN THE MOUNTIN 8 Raye 20°C) 30 ue 204060 8010012040 ‘CASE TEMPERATURE, Te, °C) 160 FIGURE 1 ‘TYPICAL INSTANTANEOUS FORWARD VOLTAGE DROP (PER LEG! VS OC FORWARD CURRENT e z g OF 04-06 08 10 13 14 18 18 ‘TYPICAL INSTANTANEOUS FORWARD VOLTAGE ‘DROP Very, (VOLTS) FIGURE 3 TYPIGAL MOUNTING feo co ue eee trast Pcie FIGURES 20 © 181 vo Seneonmster Spctctos sti charge nino te 780 20 Notes: PEAK SURGE CURRENT (PER LEG) VS NUMBER OF CYCLES AT 60H2 AND Te = 80°C ct tesa, (AMPS) i , 10 NUMBER OF CYCLES AT 60H2 REVERSE CURRENT VS JUNCTION TEMPERATURE AT OC BLOCKING VOLTAGE an. AY REVERSE CURRENT, 01 55095100 JUNCTION TEMPERATURE, T), °C) FIGURE 4 1 Standard parts have terminals Bent up at 90° ange from mounting plane. To order terminate parallel to mounting pane (see ont page [Photo change the second digit of the prt umber from "410.3 Example ‘Change Vi20? to VL237 2. Alto avalsble with center-tap common eathode, common anode and ‘oublr circuit a shown Below. e4 Sania Fi‘ARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 ‘ARO (214) 271-8511 TWX 910-860-5178 EE[=2[8 30Amp Epoxy Bridge Rectifiers vk series ae 30 Amps DC Forward Current at T¢= 80° C 300 Amps Peak One Half Cycle Surge Current Externally Exposed Copper Mounting Pad For Low Thermal Resistance 2200 Volts Minimum Circuit-to-Case Insulation MAXIMUM RATINGS evmaoi) CONTROLLED NON-CONTROLLED (at Ta=25°C unless otherwise noted) NALANCHE VALANGHE lunrrs} Sere Naber Tier [urea | vee cae al ze en coalcoa nod DC locking Vorne Va \okig Bese Revere Votage Vane | 200 | 200 | ooo | 50 | 10 | 200| 400 | 00 | 00 | 000 vos teak Reoetive Reve Voto vara AMS Revere Vologe| Vacnues| “140 [250 [azo | 3 [70 [a0 [200 | 0 | seo | 700] vane Powe: Disigstionn ign) Repon or 00cm |p = = Sure nv NA w Continuous Pane Daipoonh Vian) Reion 7 ; ia wos ato= ac Peak Surg Gavan Gye 6D Wa, ones) | ; and Te = 80°C (Fig. 2) sisal cane fee Pook Suge Coren, OOO TS OC Fa a] Tra 7% er 7g Forward CurenatT= 091) to 0 ner 7 Forward area T.-C a lS) te = Tes Tension Operating nd Stree Temperature Ranoe | Ta Tava: “aw °c Fesg a a = Le ELECTRICAL CHARACTERISTICS CONTROLLED NON-CONTROLLED (At T,=25°C unless otherwise noted) IsymBou| “AVALANCHE. "AVALANCHE lunirs| Series mba ea we | ia aie cacao Minin Avalos Voie Vim | 20 | «60 | oso WA va Taxus Avalanche Vane Vinny | 200 | 300 | 100 WA vars Doximar stannous Fond age 7 a vouw! Drop in adele 3B Ampeg rm a Moimom Revs Coen : Rated Vina Ty = 40°C. (Fi 4) lam 10 “a Mimo Revs Gren at Rated Vm at Ty = 175°C, (Fig. 4) oe a iastd Tolan Sena From Gut io Ce AD 0 aa aximom Thema! Resstnce,Jnetion wo Caw | Resse 70 rw, Feconaed Une Carecrets Pog of Uderwrt Labnbw Me a iA] inches MILLIMETERS] OF sagy a yer 68 is Meit-427 Oe comer A pilnisesese rotates | Seer : ms | |e | cart. Saecsacty. — | Sromio » de © | ieee. aetaottye | Se EL € 9165-1067 Tye. ae * - 322-608 Te fo o 7 21159-2261 Square | =TUM Pau ‘ 1930-1981 sare rn w {fa e810 4 220-270 aee=087 : C wr-7e2 ole ™ 19.05 ax. 31DC FORWARD CURRENT LVS CASE TEMPERATURE PEAK SURGE CURRENT (PER LEG) VS NUMBER OF CYCLES AT GOH: AND Te = ere g From g i 3 a : g : 3 = = 100) 2 3 3 = ‘0204060 0100120 140 1600 1 10 100 CASE TEMPERATURE, Te, (0) NUMBER OF CYCLES AT 60H Figure 1 Figure 2 ‘TYPICAL INSTANTANEOUS FORWARD VOLTAGE REVERSE CURRENT VS JUNCTION 00, DROP (PER LEG] VEC FORWARD CURMENT TEMPERATURE AT DC BLOCKING VOLTAGE a) z i Z 100 100 | 3 5 i z = § 0 @ 2 3 10 : 2 8 10) & 3 es on s == 0-02 a4 06 08 4042 14 48 18 2022 24 0 TYPICAL INSTANTANEOUS FORWARD VOLTAGE JUNCTION TEMPERATURE + DROP Vey, VOLTS) rroune 3 Faure 4 NOTES: 1. Sandgate win bn a ag rom mounting — Blane, Toorder terminate eral tomavnting plane (seo page hot, change thw second Se ofthe pat numer Wom "4 to "5 a a Examwle Change izar fe VAIN + ere 2. Also abe wth cantertap common cathode, common anode and 3 ove ‘doubler erewtee Some Gulow, 341 : if /\ owe eathooe 1" a eee i Alek Fo || POY ae se vee a4 ; Soc ee e 1 jeeeeee FOR TYPICAL MOUNTING DETAL, seepage 20 eee momen {32 «100 wo Samicotucer Sencar jean wo en,ARO SEMICONDUCTOR, INC. P.O. BOX 40675 1000 NORTH SHILOH, GARLAND, TEXAS 75040 varo (aisyariast Tx o10-0605178 EE[E3|= 30 Amp Fast Recovery Epoxy Bridge Rectifiers ae 30 Amps DC Forward Current At T¢= 60° C ‘150 Amps Peak One Half Cycle Surge Current Externally Exposed Copper Mounting Pad For Low Thermal Resistance 2200 Volts Minimum Circuit-to-Case Insulation aM RATINGS wT, = 25°C (Unlee Otherwie Specie) sywaot onrs Sere ber ewan] waa] roaax | wraaax | wane DC Blocking Voltage, Va ‘Woring Po Revers Votaoe, vena 00 | 200 | «oo | ow | vote Prat Repenve Revere Vay ve AMS Revs Votage Taieusy 7o[ we | [es] os Peak Surge Cunt 5 Gye a 60, Nan ay ; ; taro clea 2 rs ia iad oak Suge Curent 1eeca GOT and To = @FCR A | Trew @ = Toa Tori uno T= 80 o % "aoe 7g Fora Crna =4° (i Hes SD ‘0 a fas oun ‘Scere to Se ba muna tan 4103 Can Shange VECO Eos fi = ry FOR TYPICAL MOUNTING DETAL, see page 20ARO SEMICONDUCTOR, INC. P.O. ARO (214) 271-9511 TWX 91 80x 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 310-260-5178, XEBEX 10 Amp Silicon Avalanche Integrated Full Wave Bridge Rectifiers Controlled Avalanche Junctions with 250V, 450V, Ratings and 650V, Minimum Avalanche 10 Amps DC Forward Current at T, = 100°C 100 Amps Peak One Half Cycle Surge Current 2000 Volts DC Minimum Circuit-To-Case Insulation ‘* ASTERISK DENOTES JEDEC REGISTERED INFORMATION (a) (GOH RESISTIVE AND MAXIMUM RATINGS!” ‘TNDUCTIVE LOAD) symeot ase | east | mace | UNITE Peak Repetive Reverse Vlteas anu fm oe st RMS Revere Voltage Vavnmsi 140, 260 = vor "Power Oimipetion in Via) Reon for 100 pee Sauere Wore | PRM ‘00 Were ‘Continuous Power Dipation in V(@R) Region t Te = 60°C | PR * Warwteg ‘ Pook Surge Current, Cycle at 60H, (Non ep] at pane 7 = ‘Tesoote ei.) _ _ iad Peek Surge Current, tse. ot 6OHz and Te = 100% (Fig. 2) TERM 30 TAmpe Avg. Forward Curent at T= 100% (Fg 7) ie 70 amee Junction Operating and Storage Tempersturs Range Th, Tare Tas we +160) *e fed. Conn Temperature, Te, lh mamnured on the botiom ofthe cave WHA ELECTRICAL CHARACTERISTICS (ALT, = 25°C unleas otherwise spectiod) ‘symeo. wwaase | aes | tease unirs: Minimums Avlanche Vora vie) 280 450 50. Voie Maximum Avalanche Vottge vie) 500 700 900. Von Maximum Inantaneous Forward Valigs Drop at 10 Ape vr ; aanarane andtTen 100e" (eig.3) lanl 2 ‘Maximum Reverse Curent tated Vand Te = 1806 Taw oF 7a Maximum Thermal Reitancs, Junction o Case Rone 18 enw Teuleion Strength Creu to Cee, Min 72000 Vor oe Tra] wens | waLimeTens|crm] —mcnes | aactweTens[ Urn] —wones | wicumeTens[ TR] —wenes | aLLmeTEns A [7708 330 In [7057645 [r906-0.16 [o_[7e zz v_[er-161 be | 35-408 8 [-ove.c2a Te [o«eari 1-060 12 P| a0 305 Ww [35mec | ae ‘¢_[-0700e Tye | 178 ls [p7si-7a8 | vo0sie20 la [1.10 zoe [sar “75 [110.1307 | areas [x [-100Mex | 2 fa [esa ‘ase1076 [¥ | nob 270 &[-200.250 | 757aa8 |u| asmin | eas. [s_furrsse7 | zemos000 [2 [ose typ [at [reas ex | 2095 IM [tas tw [3.10 fr | zene | 1039 [ak 1.9 ae. 254 ‘G [s00.<20 [990-1067 [Nn [soomax | 2a fu seaR ex [477 35,“Te INHA36, IAS, ane NAA, 2c FORWARD CURRENT VS CASE TEMPERATURE 2 10 DC FORWARD CURRENT, to, (AMPS) 7 #60 80 100 120 140160 CASE TEMPERATURE, Te, (°C) FIGURE TYPICAL INSTANTANEOUS FORWARD VOLTAGE ‘DROP (PER LEG) VS OC FORWARD CURRENT 100 10 DC FORWARD CURRENT, lp, (AMPS) on 002 04 06 08 10 127 14 16 18 20 TYPICAL INSTANTANEOUS VOLTAGE DROP Vy, (VOLTS) FiguRe3 36. © 10: vo Senkandtr Spates neti rare tet the rtral junction o at avalanche doous ass the ete uretion ares, Tis ‘crates heroes to boy more expen, ovale devas rove ada Pracion agus! huge ranean Proper hat srg of he 4496, 44S, ar N44S, lows ra! xb 8 OC ‘2abut cert ange Th feature coupled wi the olcrealy ected cco (raua- ‘on atrengn of 200 vats mewn) slows he to be used mary appeatons (de condone oreued space, Gute an ox han wore revo posable, PEAK SURGE CURRENT (PER LEG) VS NUMBER OF CYCLES AT GOH" AND Te ~ 100°C 100 2 0 S 80 37 2 oo| § 50 Z 0 2 5% 3 20 z # ol 1 10 6 100 NUMBER OF CYCLES AT 60H FIGURE 2 NOTE: Deven vale wth opting urinals (167° —4.7Sne)atroeeracos, “To order Fag Terminale, 2 afi "F to pat no ‘To order TO Mount, 6 sii "topo. ‘To order Single Stud Mount, sso pat ro.YY \YARO SEMICONDUCTOR, INC.,P.0. BOX 40676 1000 NORTH SHILOH, GARLAND. TEXAS 75040, VARO (14) 271-8511 TWX 910-860:5178 IEBH 25 ampSiticon Avalanche Integrated Rectifiers VT Series ean 140V, 280V, and 420V RMS Operation 250V, 450V, and 650V Minimum Avalanche Voltages 25 AmpDC Output Current at T.= 100°C a 250 Amp One/Cycle Surge Current : 2000V Min. Cireuit-To-Case Insulation _— a swe [ao | woov [eco [om | cnc Bie ‘Ron voags veo 200 400 600 vate mL tre fo a a eee eas = aoe oe oe ee ee = = Tiere ae a fw Sn rae or = ree . zs =r eal re i weft ee toners tar me . 7 eae er — os are ote ee ae acto a = {esas Yas rr 5 SS eee maa 70-3 OUTLINE. mounting FLANGE Te] —retes [tamer Te | hetee | —tatimetre [Ur] — rohan | —Mietre a] 8 a [120 aos | 1 | 2200 738 S40 Ma | ea N [seo [ases076 [us za c_[ snp | 478 [swe [aaa |v | ssa [a5 | | 25 win 635 o_| 4177197 | 2090-0080 | w | 164 a7 = 425 Typ. 3.18 ‘R525 Max. 3.94 x 375 953, [00a | a7 S [isr-te1da| —aacaoo |v [0 7270 37Oa oC o6 Ge W012 18 182027 INSANNEOUS FORMED YOLIGE GIS) ret ea sce comen rin ve fia Ca MOLE HOES srtelore am Si wn ut 10 i 2 e E i Ea 5 : 3 i & | ve oF RSA am eee nea weal enn ‘98 14 re Semicond Spctetens mits nage hu beau cone wou sae OORT CRE » \ a { aa : emo i ” : = Ee var mez somo rm res STE eet FM ESE NER CMTS) ‘ROLL WAVE BRIDGE CENTER TAP: |_SoumoncamMooe | vrazeo | viawoo | vragoo CENTER TAP: SOMMON ANODE THREE PHASE | CommontcaTeooe | vrcaao | vrcave | vrosoo THREE PHASE Conmonancoe | _vrozwo | vro4co | vrosoo THREE PHASE FULLWAVE pRIGE"|_vieeo | voo | vrseo0 | “Ascomblyof VTC ad VTD 200, 400V, or 600¥) in sige -mowning ange. See revig. NOTE: Stancrs dco has fag ety omieton ‘Tecordr TOS Moor sad Te prt ho. ‘To.oder Single Stud Mount ao para\VARO SEMICONDUCTOR, INC, P.O. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 IEBHV 25 Amp Fast Recovery Time Integrated Rectifiers oes aa 200 Nanosecond Reverse Recovery 100V, 200V, and 400V, Vary Ratings 150 Amps One Half Cycle Surge Current 2000V Minimum Circuit-To-Case Insulation ATT, = 25°C (unlees otherwise apecitid) eee [ De Bloaking Votan Vee Working Peak Reverse Voltage ewe 100, 200 400__| vote [Peak Repetive Revere Valione ra [Peak Reverse Votage,% Cycle at GON (aonel —| Ving (nonool — 70 2a 30 —| “vor [CRW Flverse Valo TRS) 75, 720, 280 oT [ Peak Sarge Garren, CyEte at GM (oan-eo) 7 7 per diode Fig. 2 rs =) amet ‘Ava. Forward Curent at T= 100° (Fg. 1) te 2 ‘Amos ~onetion Operating and Siorape Temperature Range "Ta. Tava ew EO) a THOTE Case temperature (Te) massed on bottom of aie witnin 125 1nd ans ‘CHARACTERISTICS ATT, = 25°C (unlees otherwise epecitied) ee. aa ‘Maximum Instantoneous Forward Voltage Drop 7 Fy Nau 5175 Amps per diode (Fig. 3) rm tw 200 rae fmm 5 mA “Thermal Resistanes, uncon to Game Fare 7 SEM 000 Votu 0¢ “actO, 3, UTNE TWREE PHASE, > moUnhina FLANGE FULL WAVE BIBQE press MOUNTING Lr | Wehes | Miimeiors [Uv | ches | Millmate | Ur [inches | tlimotors [Ur | inches | Milietrs ‘A | 032 Typ. a1 | @ [so0max [2108 fw | 120. 30s [tT | 2250 97.15 | toma [24 {| H | ooomax | 2362 | N | 34.00 | 86e-1016| u| 1.125 28.58 | 167 Typ | 475 | 1 | 7505-7505 | 1o0s-10.16 | P| ia5max | 343 |v 156 Dia | 3.96 D | 25M eas s | ars zez3 | a | 1.77-1.197 | 28802040] _w 47 E_| 128 Tp 318 | «| ttomax [27.96 | R | 25 Max x 953 [ce [00a [270 | t | 120me. | s048 | s [151-161 Dia] ¥ 50 12,70 39De FORWARD CURRENT T in | 2 T Wivva. i We ae wee Es a Pan fea i aa tee ale Za i i a ase TewenaTune te. oun» TYPICAL INSTANTANEOUS FORWARD VOLTAGE [DROP (Per nde] VS OC FORWARD CURRENT (OC FORWARD CURRENT. lo, (AMES) 002 04 06 08 10 13 14 16 18 TYPICAL INSTANTANEOUS FORWARD VOLTAGE OROP. Figure 3 Vem (VOLTS) 40. 50 ro Semicon Scans aucto charge nora PEAK SURGE CURRENT (Pr: Diode VS NUMBER OF CYCLES AT 60 Hr (SINE WAVE INPUT) 150 100 PEAK SURGE CURRENT (NONREP), Ips. (AMPS) 10 alisec , io NUMBER OF CYCLES AT 60 M2 RECOVERY WAVE FORM. TYPICAL RECOVERY TEST CIRCUIT SEE PAGE 45FOR DIAGRAM Figure 4 “emcut | —‘eov | —ao0v [ov FULL wave BROS wien | ~ wvaook | — vax cewten ra SSeooe | wate | wane | wanox CENTER Ta cana vaio | wrezoox | wenn THREE Prase age aoa eaees Tease A oor | weve | wea | wou Tee muse eeeoee vworexx | wroeoox | vrowox “nee prase Ritwaveanoce | wwoox | waco | vrewoox “Assembly of VY. and VD (1004, 200V, 400) in engle mounting Hange. See ‘amo In sg 9 fang. NOTE, Devices have standard ag eral as stow (187-4750) ‘To order TO-3 Mount aod sata p ro To orae Single Stud Mount mate"S To pa ro\VARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 ane (214) 271-8511 TWX 910-860-5178 TERR 36 Amp, 3 Phase Full Wave Silicon Integrated Rectifiers — R620 Controlled Avalanche Series with 2S0V, 450V, 650V and 850V Minimum Avalanche Ratings R630 Series with 100V, 200V, 400V, 600V and 800V Vey Ratings a a (CONTROLLED suamumnarinas CAVALANCHE) ea uns 'CUniess Otherwise Spec SYMBOL | pazal mead] eae! REDE RED'S AOA Ae] RES DcBiocking vonage Vw | ‘Working Peak Revere Vote Vow | 200, 400] 600/00] 100 200 | 400° 600 ' 900) von | Peak Ropettve averse Votage Vins t MS Reverse Votage : Vans 140 | 280 «20| $80] 70] 10 360] 420" 580 vor 7g Frwaré Curent aT, = 100% fea % tise "Am ‘Peak Surge Current, ¥s Cycle @ 60 Hz \, 250 | (250 am | | (Non Rep}atTe= 100°C 99), e = e Peak Surge Current, 1 sec. @60Hz, Amel Tes 100°C (Non-Rep) fi nerete| = 8 Leg Powe Dissipation n Vin Region - ‘eres Dissipation n vw Reo Pot $500 NA | ve “Jrcion pean andSixage Ta. Pr ae Talon bso +190 NOTE! {Thess mayb appdata ives ae SOM ane wave dpa sie Tbde 2. Casotemperate(t jomesauedbonolcaze tnd 25°0, armlcanr “| eonrmoctED ELECTRICAL CHARACTERISTICS ssyweo. | NALANCHE) urs aa eas eae [esi] Rasa aes Wim Avance Votage Van] 250 | 450 | 50/50 na von Maxum Avalanche Votage Van | 700 | 900 [100 | 1900 NA vo ‘Maximum Instantaneous Forward Voltage Vow 15 1s ee Dropper ode a2 Amps 92) re) Maximum Reverse Current at Rated View Nae S(Te=150°C ) 5(Te~ 150°C) mA Maximum Themal Resistance, "i Maxinur Theme Pe 075 cow 4asah enstng come ee LCE OOTP cE 3.05 Tee 0 : 2 ge} ua - be i : : i g cua 2 a| BS i 10] & ‘onrawous gpeeanon CURVE : ; 3 : 5 10] eM T : 7 aaa ib “ar 06 08 10 12 14 16 Ie 20 om Das a OO leaden see Fee ve Sc eS Fei 1 laa to od al a otal co ra en v0 i Sy VS NUMBER OF CYCLES A Tc = 100. AND SME WAVE (NAAT o ES A i 7 i f : i : 7 : cy 2 ie Y 0 ole a fe tanto oe Ea oe Tes miei 70.2 OUTLINE PRESS MOUNTING ‘Since stuD mountina FLANGE 42, © 108 var Samieondutr Seaton joo ange wot teeEa 30 Amp Center Tapped Silicon Integrated Rectifiers Controlled Avalanche Types with 250V, 450V, and 650V Minimum Avalanche Ratings Non-Controlled Avalanche Types with 100V, 200V, 400V and 600V VaR Ratings 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types with 200 Nanosecond Maximum t,,, ARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH, GARLAND. TEXAS 75040 (214) 271-8511 TWX 910-860-5178 MAXIMUM RATINGS ATT,=25°C NON-CONTROLLED | FASTRECOVERY PNT All JEDEC TO-3 dimensions and notes are applicable. unless otherwise speciliog) eee: AVALANCHE TIME re ‘Series Number [R714]A716] A711x[R712x|R714x]R7 16x} a Varo Vea one Revere Vote Yawn 400 co} 100 | 200 | 00 | 600 | vor Poa Repetitive Revere Vologt Van TMS Reverse Voltage Vaimaa] a0 | 70-0 | 0 | ae] ore Pow Oitostion in Vigny Rogan for a 100 sec Square Wave (Per diode) Poe NA Warts “ontinvous Pow Bimipeton in Vian) Region at To=100°C (Per diode) - NA Watts Pook Surge Current, Gye wt 6D Wr, i ; (Non-fiep) and Te=100°C (Per diode) Fig. 20 | _'FSM 160 net Peak Surge Current, see a 60 rand Ten 100°C (Per diode) 2) ‘wnaa had ne eet ‘Avg. Forward Current at T; = 100°C (Per Diode) To 15 Arnos Taneton Operating wna Boras Temperate | 7, Tove ae sna . anes ELECTRICAL CHARACTERISTICS NON-CONTROLLED | FASTRECOVERY ATT, beidemasned AVALANCHE TIME fe Eerie Number [aria] m7s2] e714] Rove] m7ssx]Rrvaxeriex]ariex| Minimums Avalanche Varios Var WA Var ‘Maximum Avalanche Velie Var Wa Wore ‘eximum Inmaneneovs Forward Varia | Vryg ; ‘ae Drop (Per diode) at 15 Amps (Fig. 3) a Maximum Revers Gurren at Rated Ving tn eT e=100°C : ma IpntA, Ine2A_ (Fig. Sb ba fine et recon Pose 1s cow kad cotton ete Lia] INCHES [ WILLIMETERS ese ‘A[ 720. oe ; Saas. =D [aon Aas [e890 Ba i [116041194 | 79973037 rite St | a6s.678 —[ 169 9817,18 a eT HO 525 wa Ta o 151-161 Om | 3844 00OC FORWARD CURRENT (PER LEG) Seas FeMPERATORE a4 : z | gS 19 + aaa a eS zg 5 t 2 | d \ a Case TEMPERATURE, Te.) vounes TYPICAL INSTANTANEOUS FORWARO VOLTAGE DROP etn UST vse PSD GUNMEN 1000 - 00 = z 2 10 #0 g E10 g 8 oUF Ga ODETTE Te Te TOT TYPICAL INSTANTANEOUS VOLTAGE ROP ie Mot rounea "WPL AEcovnY Test cReuT EE PAGE «FOR AGRA runes ‘44 10 Yr Soman Spstetons najectto agente rlce PEAK SURGE CURRENT (PER LEG) VS NUMBER OF CYCLES 'AT.60 Hr (SINE WAVE INPUT] AND To=100%C 1000 lesa (AMPS : 2 ¢ o 10 700 NUMBER OF CYCLES AT GOH CAPACITIVE LOAD DERATING CURVE | AA CY TREE 40s 80 100 T2014 160 Tao FORWARD CONDUCTION ANGLE (DEGREES) tol roune2 109 . * 3. ze sem a $8 aS 40 82 3 Ee 20) 0 a 0 rcune\VARO SEMICONDUCTOR, INC. P.0. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 VARO (214) 271-8511 TWX 910-060-5178 Tex 7623 : Oo HP Syne Sa Pulse Xeon aK uF aov Sprague ce NOTE: 1. H. P. 214A and scope must be transformer isolated from test circuit 2. Signal coax to scope equal length 3. Adjust P.S. 1 to desired | Forward ‘Adjust P.S. 2 to desired | Reverse 4, HP. 214A output A.P.W. ~ 5 u Soc. B. Pulse amplitude + 10V to + 18V as required to saturate 2N608146 « 10 Wo Seon Spacers neta carp wo ceyy ARO SEMICONDUCTOR, INC.,P.0. 80x 40678 1000 NORTH SHILOM, GARLAND. TEXAS 75040 ‘VARO (214) 271-8511 TWX 910-860-5178 3 Amp Diffused Silicon Epoxy Rectifiers with 100 Amp Peak Surge Rating, Controlled Avalanche Types with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings ‘Non-Controlled Avalanche Types with SOV, 100V, 200, 400V, 600V, 800V, and 1000 VM Ratings Fast Recovery Types with 200 Nanosecond Maximum t,,, ‘Minimum Sized, Low Cost Epoxy Encapsulation Vasa RATNGS AND ELECTICAL CKARAGTENGTIS ATT, = 2 ius rn pee) ie esien| te | ma | setae ma” [nex [nae ‘VARO ier fms | in Vip) | Current, ‘Maximum Recovery ‘Repetitive | neverse | fegon | % Cycle ‘Avalanche Current | Time At PART | Gert | Vottge |For toowe| at 60 He Votre va [ect Ame mo. | Wot | emt | sau) one) | i Re on wats menage cme | fe feaial | oA | Ut CONTROLLED AVALANCHE vaaz 7200 ¥ a a 250 700, Fe oo aes Ie ost eves et) agra Pesce toe va fate] as vaa6 600 420 160 1100, |100% 150°C] vase | 0 | 0 eof sae NON CONTROLLED AVALANCHE vas [aa an a a Co seams roercf ss ceo g ones toma | so ge oe con soe ase | “p00 se wae [tees FAST Rao wate} ae | oth v33ax 200 140 NA rT 3 bs0t0 +135] NA NA 14 19 G25C) 290 aon aac ee Vaaex ‘600 220 bassli a EE 1 mm [nonce | wccmerens E | astm] aa aT niles cae T ¢ 8 9.65 es cous Cf sssiZtam | sn S42 47w os ae wet: ‘7 is é a FIGURE 1 Figure 2 FIGURE 3 ‘TYPICAL RECOVERY TEST CIRCUIT ‘SEE PAGE 45 FOR DIAGRAM Figures ancron rewenarane t86h FIGURES ay 48 010: Yo Semondts. Spctatos tect hrge nite.Y \VARO SEMICONDUCTOR, INC.,P.0. 80x 40676 1000 NORTH SHILOH. GARLAND, TEXAS 75040, ‘VARO (214) 271-8511 TWX 910-860-5178. 3 Amp Diffused Silicon Epoxy Rectifiers with 200 Amp Peak Surge Rating Controlled Avalanche Types with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings ‘Non-Controlled Avalanche Types with SOV, 100V, — 200V, 400V, 600V, 800V, and 1000V VR Ratings es a Fast Recovery Types with 200 Nanosecond Maximum t,,, ‘Minimum Sized, Low Cost Epoxy Encapsulation ss ‘MaxaMuM RATINGS ANO ELECTRICAL CHARACTERISTICS ATT, = 25° (unless ceri pact) vaRO | rome | aes [ornpetn) Suze, Serta wnien |nimar | ers, Reve” | ea, Repetitive | poverse | "Ragion’ | Ncyew Jona Storegdvaienche |Avatencne | Ferwers |. Currant PART | Sry | Voltas fortooume| 60 He [fonowrear] vortuon | Vottge” | Youese | AU wo, | Manat | Sots Psat") eres ae | Sot | soar ere rca An ware | (amo) vei) = Vann [variwar] raw | iam | to [ta vere | wom | vom | vem | iw [ee CONTROLLED AVALANCHE var [ 200 [100 750 [ 700 “50 900 . wose_|_#00_1_280 1) 500 | 200 2 | s0v0+180}—s sa [8 azo] wa vae6 600, 420 = a 1004 150° vaua | 800 | —e ‘0 —[ ya00 NON-CONTROLLED AVALANCHE vaso] [3 ‘vasa | 200 | 40 hoD vase | «oo [200] na | 200 | 2 {sorosreol na | ma | aa |S aatc| ma vase | 600 | 220 1008 159° vasa] —a00 | 500 vvas10 | y000 | 700 FAST RECOVERY vasox [| _ 8038 er Mow vasax | 200 [vo] na | v0 | 2 foorwete] wa | wa | aa fio asec] 200 vasax | 400 | a0 oo i vasex_| soo | ~a20 Lay crm wens | aaccerens ‘® | Oa8-.062 Bim | —1.22-122 De ° ‘20 88 € = oes o| ams cas € | sssrtam | ass 3142 49Figure 2 FIGURE 3 ‘TYPICAL RECOVERY TEST CIRCUTT SEE PAGE 45 FOR DIAGRAM Figuae4 FIGURES 150 0161 Vr Samant. specter hnge wet.ARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 ARO fersyarvesii Twxa10-ee0 9178 Schottky [O)[]|EB 750 ma Dual In-Line Bridge 20v, 30v and 40v Vea. ———=—_—_ -65Volt VF Per Diode at 750 mA. ‘Standard .10”—2,54MM Dip Lead Spacing 2 Dibs Will Fit Into Standard 14 Pin Dip Socket f ‘Moisture Resistant Epoxy Case aM AAEE rs a a Oe — 3 ESET cae ee ° = Eresarmsa. = — ee x wb ee = : i Tega Gee ase = . i RTT : a = ee eos fa Soe 7 oes ee aaa sutcrecas cangacyenncs ee ee ee a ear eR mT Te eae eas 7 - enreneniaia a - ie. 3 Rese he emda el | oem cason af issae | [lacus oe a (fleet ates Bl lisse | evaoa glia vi | oe eae a ae lec My eee [decaFG. Fa. 2 ‘TYPICAL REVERSE CURRENT ‘TYPICAL FORWARD VOLTAGE a waseed g 8 8 8gg888 4 sseaeed ;ANTANEOUS FORWARD CURRENT (mA) la. INSTANTANEOUS REVERSE CURRENT (mA) ne 8 8 2 escae, Ve, INSTANTANEOUS REVERSE \V,. INSTANTANEOUS FORWARD VOLTAGE VOLTAGE (VOLTS) PER DIODE (VOLTS) PER DIODE FI. oo CAPACITANCE VS. REVERSE VOLTAGE DERATING CURVE FOR TYPICAL OPERATION ; 227 Z oe 5 Bx : He : ee Ve, REVERSE VOLTAGE (VOLTS) 1, AMBIENT TEMPERATURE (°C) 1. The eurent fow in a Schottky barner rete 1s due to majorty carer conducton and not flected by reverse racoveryWransiens due 10 Stored eharge ano minor carter yecion as i convertonal PN Godes. ‘The Scrothy burner feether may be eonsdered for purposes of erent analysis, s an ea hoe in paral wit a variable capaciance equal snvalve tothe uncton capacitance, Soe Figue 3 1. THERMAL CONSIDERATIONS. 1X The derating curve offre 4 may be used for intial design work Thermal tsewey © enirely possible on marginal designs due othe inerenty large reverse leakage of Schottky baie veciiers and the fact tal reverse power mulipies abou! 1 32 umes for each 5° C a junction temperature ncrease Ce recommend at i designs be verted stan amet temperature a east 10” C above the maximum at which the equipment wil ever ave to operate 52 «10: vo Second. Speen ect charge ete,ARO SEMICONDUCTOR, INC. P.0. BOX 40678, 1000 NORTH SHILOH, GARLAND. TEXAS 75040 ‘VARO (214) 271-8511 TWX 910-860-5178 1 Amp Schottky Barrier Rectifiers se 8 20 Volt, 30 Volt and 40 Volt Vag .550 Volt vp at ip = 1.0 Amp Very Fast Recovery Time ‘Minimum Sized, Low Cost Epoxy Encapsulation MAXIMUM RATINGS laste seme unce canal tae syweo. | vskrzo | vski30 | vskuo | units DC Blocking Voltane Van Working Peak Reverse Voltage vawM 2 20 40 | vor Peak Repaitive Reverse Voltape Vaam. IMS Reverse Voltage Variants) a a 7a [vane ‘Average Rectified Forward Curent (Fig, 5&6) i 1.0 ‘Amos ‘Ambient Temp. @ Rated Vay, Raja < 50° CW Te? 30. 85 80. °C Peak Surge Current (non-rep), 300s PulseWidth (Fu) Teg 700 ‘Amps Peak Surge Current (nonvep), wevele, 6OHZ (Fig. 4) | Iggy 40 ‘Amps [Operating Junction Temperature Ty 65 to +160" °C Storage Temperature Tse. 65 to 1150 °C *Vam = 0.1 Vem Max, Raja = 35° CW ELECTRICAL CHARACTERISTICS (ati tapp enna eal sywpo. | vskizo | vskra0 | vskuo | units Maximum Instantaneous Forward Vala Drop (| vp See Fig. 2for Typical vp ip=0.1 Ame 70 ip-10 Amp 550 Vols if-30 Amp “250 Maximum Instantaneous Reverse Curent at Rated Vag (1 in See Fig. 1 for Typical ig Ty=28°¢ 10 mA TL 100° ¢ 10.0 (1) Pulse Test: Pulse Width = 300s, Duty Cycle = 2% A ey EC [ara —inenes Mai UMETERS a ; Rao tebe 7a 26D T = 1 2 | foo— ore abner e | jean tones hen [zw on ——o +|gINSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (AMPS) x ‘CAPACITANCE, (oF) FIG. ‘TYPICAL REVERSE CURRENT 10 19) oy a os 0 152075 Sa ‘yy INSTANTANEOUS REVERSE VOLTAGE (VOLTS) FiG.2. TYPICAL FORWARD VOLTAGE. 109 10 ° 5 16 sg INSTANTANEOUS FORWARD VOLTAGE (VOLTS) FG. CAPACITANCE ve REVERSE VOLTAGE 3000 7 100] 10 10 Vp: REVERSE VOLTAGE (VOLTS) ‘54 es mics Sonctsone nc octane wet vsK120 vsk120 vsK140 PULSE WIDTH S00.e€ ‘T= LEAD TEMP, MEASURED (09"-.79m FROM RECTIFIER BODY WITH 40 GAUGE THERMOCOUPLE PULSE WIDTH = 200 prec vsk120 vsK130 vsk140 Tas 250c ‘TEST FREQ= 100KHE “The curant flow in Schottky baer rectifier ited to majority errr conduction and 90% ‘iced yor acer tanner ‘Stored eharge and minority cari injction 2 Irconventional PN diodes Tre seorhy tri recite may be coniea for purpowe of ceeuit analy os 6M ‘Soden poralil wh 2 warble capecitance ‘Svol in volue tothe Junction capacttanee. See Fre 3.1 Amp Schottky Barrier Rectifiers Fic. 4. SURGE CURRENT vsNO. OF CYCLES (NON-REP.) 5 g 2 5 al Tarte i i i . , q wmaenor Esa See eee ease 7 Sx | : Eg ate i. ett 35 1/16" Glass 85 eres ten eee HE zero Ene # one fe; ae < 120 KM: SQUARE WAVE 2 3 ‘Tq, AMBIENT TEMPERATURE (°C), FIG. 6A) 1 op——REVERSE POWER DISSIPATION (vsx'20) ‘Pp: REVERSE POWER DISSIPATION (WATTS) 2 ® 10 18 20 \Vpm PEAK REVERSE VOLTAGE (VOLTS) 2A Sn REVERSE POWER MULTIPLIES 1.32x FOR EACH 39¢ TEMP. INCREASE USE THs MULTIPLIER FOR INTERPOLATION BETWEEN CURVES SHOWN ON FIGURES BIA), 618), BIC) USE 75°C CURVES FOR ALL CASE ‘TEWP: BELOW 750¢.FIG. 618) REVERSE POWER DISSIPATION (VSK130) S Pq, REVERSE POWER DISSIPATION (WATTS) 2 Fic. 610) REVERSE POWER DISSIPATION (VSK140) 10 on Pp. REVERSE POWER DISSIPATION (WATTS) 0 al LL NE Vu PEAR REVERSE VOLTAGE VOLTS eas PEAK REVERSE VOLTAGE VOLTS) room, nao) romano 18S Bisursmon com a8 owen ssramion . fea ae a oe ot Oe [eae eg B | Sectinoe 3 Zuapieatiee Eau ; iF a aa ie aul | 5 Ws ES Ba AL BE 3 os : i, go ‘I bu | i. : g =e PERS rome. fa i aE a : a 3 \ é | 3 \, a a g-AVERAGE FORWARD CURRENT (AMPS) ‘Tharmal Considerations: 1. The derating curve of figure 5 may be used for inital desian work 2, Une the curves of figure 6 t0 study the voltage / current / temperature parameters, These curves are hepful in determining when connected t0 9 ti point whose temperature is ifluenced by other heat producing components [Jo use thew curves, ad8 the reverse power dissipation from figure 6 (Al, (B) oF (C) tothe forward power dissipation from figure 6 (0) then go to figure 6 (E) to find the maximum allowable ti poi temperature. 13, The heat snk design Ite point) must be designed to Keep the temperature at this point Below that shown on the figure 6 (E) curve, Thermal runaway ty porsble on marginal designs ‘dun to the inherently large reverse fakage of Schottky ort ‘ectiers end the fact that reverse power multiplies about 1.32 times for each 5° Cot vamperatute increase 56 © 108 vr amlentictr Spacer nc octane wn te Exp TIE POINT TEMPERATURE (°C) 4. The curves of figure 6 (Ewer based on full ated reverse bias voltage. Slightly higher tle point temperatures can be tolerated 5. I the application ch that DC reverse bias i applied nearly 100% the time, ll temperature poims on curve 6 (E) should bevedoced 12°. 16. These thermal exstanees apply: gy, (measured 1/32" from pony) =120CIW and the led = SOSCIW Pe inch when equal beatunking is applied to each lee.ARO SEMICONDUCTOR, INC. P.0. 80x 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 — (214) 271-8511 TWX 910-860-5178 3 Amp Schottky Barrier Rectifiers any 20 Volt, 30 Volt and 40 Volt Ver o 475 Volt vp at ip = 3.0 Amp wy Very Fast Recovery Time ec Minimum Sized, Low Cost Epoxy Encapsulation ay gneneest we 08 MAXIMUM RATINGS Cate ue therein noted) symeor | vsxs20 | vsxas0 ] vsxa«0 | units DC Blocking Vortage Venn Working Peak Reverse Voltage Vawne 20 20 40 | vons Peak Repetitive Reverse Voltage vane IMS Reverse Voltage Taian) 7a a 2a | vorr “Average Rectified Forward Current (ig 5 & 6) lg 30 “Amnps “Ambient Temp. @ Rated Vw. Raya = 24° C/W TA 85 20 5 °C Peak Surge Current (non-rep), 300usPulseWidth (Fig.4)| Trg 250, Amps, Peak Surge Current (non-rep), evel, 60H2 (Fig. 4) | tes 750 “Amps ‘Operating Junetion Temperature 1s =i +150" 8 Storage Temperature Tse =65 t0 #150 % * Van = 0.1 Vam Max, Raya = 32° CW ELECTRICAL CHARACTERISTICS (At tae soe eae eee sympo. | vsxs20 | vskao | vsxaso | unirs ‘Maximum Instantaneous Forward Voltage Drop (| vp See Fig. 2 for Typical yp pe 1.0 Amp 400 ig = 30 Amps 475 Vorts iF* 100 Amps “780 Maximum Instantaneour Revere Garant at Rated Vig (1) ia See Fig, 1 fr Typical ip T= 28°¢ 30 a TL= 100°C 200 (1) Pulse Test: Pule Width = 300.5, Duty Gye A ee CC a tra_[—inenes | ~nmerens t T ce tease bc e | aon ae somes ‘ | | am cansFIG. TYPICAL REVERSE CURRENT 109 7 = =a wo], - uve cre iy INSTANTANEOUS REVERSE CURRENT (mA) ry) os 18 2 2% 9% % @ vq INSTANTANEOUS REVERSE VOLTAGE (VOLTS) FiG.2 ‘TYPICAL FORWARD VOLTAGE 10 on igs INSTANTANEOUS FORWARD CURRENT (AMPS) ° 05 10 3 vp INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Fig.3 (CAPACITANCE vs REVERSE VOLTAGE 1000 ‘CAPACITANCE, (nF 10 00 \Vpe REVERSE VOLTAGE (VOLTS) ‘58 « 101 ro Semicon Scio net change wine vsKa20 = vsxss0 1 VSK340 PULSE WIDTH - 00 use J, = LEAD TEMP, MEASURED 03.78 FROM RECTIFIER BODY WITH 40 GAUGE THERMOCOUPLE PULSE WIOTH = 300 see Tas 25°C vvsk320 vsk200 vsKa40 Ta 25°C ‘TEST FREQ. ~ 100 KH “The current flow in Schottky baer rectifier ‘e'doe to majority carrer conduction ans not ‘Siteted by reverse recovery transients due "0 toed chorge and minority carrier njection at in conventional PN diowe. “The Schottky arte rectifier may be considered for purpowr of cveuit analy, stan teal ‘ode, in poral with 2 warble capuitance ‘Sul in value to the junction capsctance. See Figure 3.3 Amp Schottky Barrier Rectifiers Fig. 4, SURGE CURRENT eNO. OF CYCLES INON-REP.) 5 ‘egw. PEAK SURGE CURRENT (AMPS) 8 Tan BC a + 1 wumaen or aves cone cenarna cove FE Fea, oenanon el MOUNTING METHOD 1 ps a Se Ee a iis i OnE BT . MOUNTING METHOD 2 - Tor View 230 | _— 22 | Vetownecnnen | ol Saat ann 5 “Semmes 2 |sigen sees se a Ts Aluent Teena Pe en nevense ron Slo sxe os 2 Snete pe ei z z Bas eR SU eA g INTERPOLATION BETWEEN CURVES i RSMeans uae emmust 3 USE 750C CURVES FoR ALL CASE i veLTECaNES! ° 340 16 20% Va. PEAK REVERSE VOLTAGE (VOLTS) 59Pp, REVERSE POWER DISSIPATION (WATTS) Pg. FORWARD POWER DISSIPATION (WATTS) FIG. 6(8) REVERSE POWER DISSIPATION (VSK330) os 0 CO \Vam: PEAK REVERSE VOLTAGE (VOLTS) FIG. 60), FORWARD POWER DISSI 'V8K320, VSK330. VSK340 TION a REVERSE POWER DISSIPATION (VSK340) 19 oy Pp. REVERSE POWER DISSIPATION (WATTS) Cr a a a \Vpa. PEAK REVERSE VOLTAGE (VOLTS) Fic. se) MAXIMUM ALLOWABLE POWER DISSIPATION TIE POINT TEMPERATURE Zoe | 307 ‘- g 25, aa t Ep2s | aad a3 Toate soto ae 2.0} PEAK TO.AVERAGE- amt Bs 1 ES 33 2B 1.0) ge 1.0 EH i Cr a Ig AVERAGE FORWARD CURRENT (AMPS) “Thermal Considerations: 2 “The derating curve of figure S may be red For ini design Use the curves of figure 6 to study the voltage / current / temperature parameters. These curves ate helpful in determining the rectiier capability when connected {0 9 tie point whose ‘temperature fs intlvenced by other heat producing components To use these curves, aad the reverse power dsipaion from ‘igure 6 (A), (8) or (C) to the forward power dissipation from figure 6 (D} then go to figure 6 {E) to find the maximum allowable tie point temperature. ‘The heat sink design (ie point) must be dargnad to Keep the temperature t this point below that shown on the figure 6 (ED curve, Thermal runaway is ently posible on marginal designs due to the inherently large reverse leakage of Schottky barter recuiters and the fact that reverse power multiplies about 1.22 times foreach 8° C of temperature meres. 60 0 wre Semicon Seaton eto charge wi toe a a ‘LEAD TIE POINT TEMPERATURE (°C) “The curves of figure 6 (E) ware based on full ated reverse bias otage. Slightly hisbor te point temperatures can be tolerated {lower voltages, We recommend thet sll designs be verified at fn ambient temperatre atleast 109 C higher than the maximum ach the aquipment wil ever have to operate Tt the application it such that DC reverse bias applied nearly 100% ofthe time, sll tempereture points on curve 6 (E) should bevedverd 19°C. ‘Those thermal rettances apply: Rg, (measured 1/32" trom pony)” 6© C/W and the led = 258 C/W per inch when eausl heotsinking i applied to each lea.ARO SEMICONDUCTOR, NC., P.O. BOX 40676 1000 NORTH SHILOH, GARLAND. TEXAS 75040 (214) 271-8511 TWX 910-960:5178 5 Amp Schottky Barrier Rectifiers coe 20 Volt, 30 Volt and 40 Volt Vaux 450 Volt vp at ip = 5.0 Amp Very Fast Recovery Time o Minimum Sized, Low Cost Epoxy Encapsulation Hyyen’ aggre ‘ oye” na 08 at MAXIMUM RATINGS 520 vexsao | units (At Ta = 25°C unless otherwise noted) syemon Ee bien DC Blocking Vltge Working Peak Revers Votoge Van | 20 20 40 | vos Peak Repeitve Reverse Voto va RMS Reverse Voltage i VaiaMs) 4 2 28 | Vols verge Resid Forward Curent Fa 66) 50 ‘mos Ambient Temp @ Rated Vays. Ro qe 16 CM? 78 6 wT * Peak Surge Crent non ep) 300 Pune Wain (F| Tega Eo en Peak Surge Current ronvep) over, 60H (Fad) | lesa 250 Aen ‘Operating Junction Temperature =65 to +150" °C ‘Storage Temperature Tst6 65 to +150 °C *VaM £ 01 Vayy Mon. Raya = 12°C ELECTRICAL CHARACTERISTICS re ee symeo. | vsxszo | vsxsao | vsxseo | units ‘Maximum Instantaneous Forward Voltage Drop (1) Se Fg 2 fr Tye vp me 400 if 80 Vt ip=150Ampe a5 Waximum osantaneous Reverse Garent st fated Vay) See Fig, 14" Typha ig Tys290¢ 10 oe TE= 1009 25 TH Pl Tea Pulse Width = 200, Duty ek ra le oe ae se ae o | fee | lene bel & | mom | ones : s | an 61Fig. TYPICAL REVERSE CURRENT 5 [owe ~ e: t Te = Fee ge INSTANTANEOUS REVERSE CURRENT (mA) 2 0 8 0 6 2% 7 0 = @ sp INSTANTANEOUS REVERSE VOLTAGE (VOLTS) Fia.2. TYPICAL FORWARD VOLTAGE 8 INSTANTANEOUS FORWARD CURRENT (AMPS) aa} 05: 10 78 sp INSTANTANEOUS FORWARD VOLTAGE (VOLTS) FiG.3, ‘CAPACITANCE ve REVERSE VOLTAGE 10.000 CAPACITANCE, (oF) 100 10 \Vpe REVERSE VOLTAGE (VOLTS) (62 18 re Samconctr Sensatron waste ——____ vsxsz0 vsxs90 vsxs4o PULSE WIOTH = 200,086 “T= LEAD TEMP, MEASURED 03.78 FROM RECTIFIER BODY WITH 40 GAUGE THERMOCOUPLE PULSE WIDTH = 300,ee a7 78°C vsxs20 vvsxs20 vsKs40 Ty, 7 25°C ‘TEST FREQ ~ 100 KH? ‘The current How in a Schottky barrier aciir ie to majority earier conduction and snot tected oy rovers recovery transients de 10 ‘Rorad chetge ana minority carer injection In conventional PN oder. “The Schottky bait rectifier may be considered ‘ode in parallel wih a'varable capacitance ‘gual in value tothe Junetion eapactance, See Fore 3.5 Amp Schottky Barrier Rectifiers Fig. 4 ‘SURGE CURRENT vs NO. OF CYCLES (NON-REP.) lo, AVERAGE FORWARD CURRENT (AMPS) Pp. REVERSE POWER DISSIPATION (WATTS) ‘pgm, PEAK SURGE CURRENT (AMPS) FOR SINGLE RECTIFIER) 5 7 10 00 NUMBER OF CYCLES at 60 HE FIG.5. go-—DERATING CURVE FOR TYPICAL OPERATION 50, rou mave eowren tan orem 40| i rane povane wave 20| | 20| 1 25 75109. 125160 6 ‘Tq AMBIENT TEMPERATURE (°C) FIG. 6a), [REVERSE POWER DISSIPATION (vSK520) iy s ae tne waves 5 10 16 2 Van. PEAK REVERSE VOLTAGE (VOLTS) MOUNTING METHOD 3 EVERSE POWER MULTIPLIES 1.32 FOR EACH 89C TEMP, INCREASE, USE THIS MULTIPLIER FOR INTERPOLATION BETWEEN CURVES SHOWN ON FIGURES BIA) BB), 816), USE 759¢ CURVES FOR ALL CASE ‘eM. BELOW 759C.FIG. 68) REVERSE POWER DISSIPATION (VSKS30) 109 oy Pp, REVERSE POWER DISSIPATION (WATTS) a os 0 1520s \Vam PEAK REVERSE VOLTAGE (VOLTS) 1G. 6(0) FORWARD POWER DISSIPATION “VSKS20, VSK530, VSKE4O) Fi9. 8c) REVERSE POWER DISSIPATION (VSKE40) 19 Tae oe fy ame ne mal Pp. REVERSE POMER DISSIPATION (WATTS) 2 oo a a Va PEAK REVERSE VOLTAGE (VOLTS) FIG. 6) MAXIMUM ALLOWABLE POWER DISSIPATION We TIE POINT TEMPERATURE g- FORWARD POWER DISSIPATION (WATTS) Ig. AVERAGE FORWARD CURRENT (AMPS) ‘Tharal Considerations: 1. The derating curve of figure & may be vied for iii design 2. Use the curves of figure 6 to stuty the voltage / current / temperature parematers. These curves are helpful in determining temperature is influenced by other heat producing comooneats ‘To use them curves, ad the reverse power citipation fom igure 6 (Al, (1B) or (C tothe forward power disipation from figure 6 (0) then go to figure 6 (E) to find the maximum allowable te point temperature. 3, The heat sink design (tie point) must be designed to keep the temperature at this point Below that shown on the fgute 6 (ED curve. Thermal runewey i entely posible on marginal designs {ue to the inberently large revere leakage of Schottky barrier fecliliers and the Tact that reverse power mutiies about 1.32 times foreach 8° C of temperature inven, 64 11 Wow Semcon Spcteson bjs change moun : .” Ctoucrnve Loa | Snes j oi i ] ait Tea | B. 71 # i. i Hos nee | i | Agua bh oa LEAD TIE POINT TEMPERATURE (°C) 4. The curves of figure 6 (E) ware based on full ated reverse bias voltage, Slightly higher ve point temperatures en be tolerated {st lower voltages. We recommend tht all designs be verified fin ambient temperatre at east 102 C highar than the meximur which the equipment wil ever have to operate the eopication auch that DC raver bia applied nesriy 100% ot the time, all temperature points on curve 6 (E) should be reduced 13°C 6. These thermal resistances apply: Ry. (measured 1/92" from tpony) 6 OC/W and the lod = 258C/W per inch when equal hestinking i applied to ach teas. 5ARO SEMICONDUCTOR, INC., P. 0. BOX 40676 wane 1000 NORTH SHILOH. GARLAND, TEXAS 75040 (214) 271-8511 TWX 910-860-5178 6 Amp Schottky Rectifier 20 Volt, 30 Volt, and 40 Volt (Vyg,.) 6 Amps Average Output Current (,) Plastic T0220 Package ‘These units are designed to provide an economical 6 amp Schottky output. They should be used in high frequency power supplies where efficiency and reliability are of the utmost importance. (MAXIMUM RATINGS |(AtT,=25"C unless otherwise noted) sympo._| _vskez_| _vskes_| vskes | _ UNITS IDC Blocking Votage (per iodo) Vnw Working Peak Reverse Voltage ven 20 30 40 Votts Peak Repettive Reverse Voltage: i ve RMS Reverse Vollage VR 14 eras eae Vor Non-repetitve Peak Reverse Voltage v, 28 a) Votts [Average Rectiied Forward Current 1 6 "Amps Peak Surge Current (Nonrep.) at 60H,, ” cycle. Ne bad bsliag Junction Operating & Storage Temperature Range | Ts Tor ~65t0+ 180 °c Thermal Resistance, Juncion-to-case 8, “cw [Elocical Characteristics (ATT, = 25°C unless ] ltherwise noted) symeo_| _vskez_| vskes_| vskes_| _uNmTs [Maximum Instantaneous Forward Votlage Drop (G00 | y mo 055 Volts ns pulse) atl, Reign 077 on Maximum instantan rer xiv elagianeousRevtee Curent vs $0 | mat (1) 2% duty cycle Dil) [WREST wi WETERS a 0415 Max | 1054 Wax 8 108 274 [c 248 33 TABCOMMON TO) 44 K 0 Bos Wax [8 a7 ax} TERMINAL ke e a EK . = nt J a al F ‘o2e0 ax | 6.1 Max o[fo00 254 TAB # 0.200 508 7 0.050 127 Pp z 0.038 or K is0Max | 483ax aE ic 3050 a ee we ‘0.082 036 4 N 05105 267 o 049 a6 ) 2 Mtr peo 0.100 ae 254vax——] (2) Dimensions are typical values unless otherwise specitig 65camermnce We) (66 + 10s wre Benicondcte Sion atta charg tneY VARO 12 Amp Full Wave Dual Schottky Rectifier ARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH. GARLAND. TEXAS 75040 (214) 271-0511 TWX 910.860.5178 20 Volt, 30 Volt, and 40 Volt (Varm) 12 Amps Average Full Wave Output Current (I,) Plastic T0220 Package dual Schottky output. They should be used i +, Ti ee aed a ee te am) h frequency power supplies where efficiency and reliability are of the utmost importance. MAXIMUM RATINGS (At Ta = 25° C unless otherwise noted) ISYMBOL| VSK12 | vSK13 | VSK14 | UNITS DC Blocking Voltage (per diode) Vam Working Peak Reverse Voltage. Vawm 20 30 40 Volts Peak Repetitive Reverse Voltage Vanw RMS Reverse Voltage VRiams) 14 21 28 Volts 1 Non-repetitive Peak Reverse Voltage Vasw 28 36 | 48 [Volts Average Rectified Forward Current I, 12 Amps: Peek Surge Current (Nonrep.) at 60H, Ya leew 140 ‘Amps Junction Operating & Storage Temperature [4 eaeaatt isd °C Thermal Resistance, Junction-to-case Bic 3.0 Electrical Characteristics (At T, = 25°C unless. Otherwise noted) ISYMBOL|VSK12__VSK13_ VSK14 | UNITS Maximum instantaneous Forward Vollage Drop | y, p= 5A O55 Valls (300 us pulse) at Ip flip = 12a 07 a) Maximum Instantanéous Reverse Current (300 ius pulse) at rated Vaxs In oa mA (1) (1) 2% duty cycle DiM(@)__ INCHES T0220 4 SAIS Mat TAB COMMON TO. K c 248 TERMINAL 2 akk 2 0.605 Max [15.37 Wax e 0.552 1402 z F ‘0.340 Max——[ 61 Wax 2 g S 0.100 25a H ‘0.200 5.08 r 0.050 127. i 2.085 0.89 * 90 Max [483 Max c 3950: 127 Mt 0.028 Max | o6¢ Wax N 3.105 267 5 O13 3.65. 1 3 (2) Dimensions are typical values unless otherwise specifies 67(68 150: wr samieonauctr oeteaon ste octane amos.ARO SEMICONDUCTOR, INC. P.0. BOX 40675, 1000 NORTH SHILOH, GARLAND, TEXAS 75040 ARO Grayarvasit TWX o1oae0 S178 15 Amp Schottky Barrier Rectifiers aaa 20 Volt, 30 Volt and 40 Volt Visos ‘ 600 Volt vy AT ip = 15.0 Amps Very Fast Recovery Time 4 Standard DO 203AA (Formerly DO-4) Case a TAGS a srmsor | vaxrezo | vexrsso | vsxieao | unirs C Blocking Voie Vr vere Morkng Pst Rees Votne ve ~ x «0 Peak Repet.te Reverse Vane vw FSR Vote aug [ae i as Avro Feited Forward Gent Fa S06) in io npr "Ambient Temp. © Rated Vpwy.Raja = 45° CMW Ta emia] EEiOo e °C Peak Surge Current (non-rep), 300usPulse Width (FigAl| Teg Hie 500 ‘Amps Peak Sarge Gren non ep) eye OF 8) | ee 300 ‘oe Operating Junetion Tampere iA eer 8 Sore Terpersre Tet eB a0 % heal Resistance Janevan to Cae Poue 2 Ter “Va $10V on VSK1520 or 18V on VSK1530 or =20V on VSK1540, Roja =4.5°C/W [ELECTRICAL CHARACTERISTICS (At T a= 25° C unless otherwive noted) [Maximum Instantaneous Forward Voltage Drop (1) vF See Fig, 2 for Typical vp ig 80 Amps 500 symeo. | vsk1s20 | vsk1s30 | vskis40 | UNITS. ig= 15.0 Amps 800 Volts ig= 45.0 Amps 1.0 ‘Maximum Instantaneous Reverse Current at Rated Via (1) ip See Fig. 1 for Typical ig T= 25°C 10 ae Te= 100°C 78 (1) Pulse Test: Pulse Width = 300,18, Duty Cycle = 2% JEDEC Package Tra [_ncnes [mic LiMeTERs a 7 676— 1076 8 200 — 056, 159241 c 250 Max 3sMex ° o7s— 175, tat 4a e aa Toms F 405 Max 1028 Max cs | acomas zoaMex | eae 1o75— 11.12iG. 1. ‘TYPICAL REVERSE CURRENT 5 —_____—. vsxis20 TILL. vskiss0 vsk1540 PuLse wor 300 pee Te gSASe.TeMe,mensuReo 13/52" Deer HOLE IN ONE OF HEX FLATS I INSTANTANEOUS REVERSE CURRENT (mA) 2 Ss 0 1 2 2% » % 4 sy INSTANTANEOUS REVERSE VOLTAGE (VOLTS) FiG.2. ‘TYPICAL FORWARD VOLTAGE PULSE WIDTH = 200 pee \g- INSTANTANEOUS FORWARO CURRENT (AMPS) Tar 25°C 10) on o 10 a sp NSTANTANEQUS FORWARD VOLTAGE (VOLTS) FiG.3, ‘CAPACITANCE ve REVERSE VOLTAGE 10,000; : a ——— vsxis20 vsk1630 vsKis40 T= 28°C & TEST FREQ = 100kHe From ‘The current flow ina Schottky bares rectifier 2 {Te to: majority carver conduction and not is ‘iiected by rem recovery transients due 3 Stored charge and minority corti inaction = Inconvantional PN diodes ‘Toe Sortprice may be con Bose R° praia ‘wat a area capctonce {aval in value tothe Junetion eapocitanee. See Flour 3. 10 Vpy REVERSE VOLTAGE (VOLTS) 70 1501 re samieonauctr Sietenr tet cngemon ce,15 Amp Schottky Barrier Rectifiers Fig. 4, ‘SURGE CURRENT viNO. OF CYCLES (NON-REP.} 1000 = ‘es: PEAK SURGE CURRENT (anes) s al | 10 00 NUMBER OF CYCLES at 60H FIG. 5, DERATING CURVE FOR TYPICAL OPERATION 160 RECOMMENDED HEATSINKS EACH RECTIFIER MUST BE ON A SEPARATE HEATSINN. (A) THEAMALLOY 6401 Natural Convection (8) WAKEFIELD NCG20-.26, Natural Convection \ (c) WAKEFIELD NCGB-1.25, 300m, Ar Flom Ig. AVERAGE FORWARD CURRENT (AMPS) (FOR SINGLE RECTIFIER) 50 a | \ conpITIONs ‘Vok1820 RECTIFIERS. FULL WAVE CENTER TAPPED CIRCUIT. PEAK REVERSE VOLTAGE AS NOTED. a FILTER CAP = 1200uF as a ae ae sR aCe Wave Tq, AMBIENT TEMPERATURE (°C) FIG. 6A), REVERSE POWER DISSIPATION (VSK1520) = — = ce ys REVERSE POWER MULTIPLIES 1.22 FOR EACH 89C TEMP. INCREASE, USE THIS MULTIPLIER FOR. INTERPOLATION BETWEEN CURVES SHOWN ON FIGURES 61a), 618), 10), USE 759C CURVES FOR ALL CASE ‘ewe. BELOW ¥58C. pe REVERSE POWER DISSIPATION (WATTS) o 6 WS 2 a m0 Vp. PEAK REVERSE VOLTAGE (VOLTS) nFIG. (8). REVERSE POWER DISSIPATION (VSK1530) + Soe 10 jy REVERSE POWER DISSIPATION (WATTS) 1 1 rr \Vpm, PEAK REVERSE VOLTAGE (VOLTS) FIG. 60) FORWARD POWER DISSIPATION (VSK1520, VSK1590, VSK1540) Fig. tc REVERSE POWER DISSIPATION (VSK1540) 2 E g a a eT) Vp. PEAK REVERSE VOLTAGE (VOLTS) Fig. te) MAXIMUM ALLOWABLE POWER DISSIPATION ACASE TEMPERATURE e / 5 Z 128) Y. g Set eee a 100 peaxrouvenaae & .. y i j 2 i E60 } & i i i 3 ol L = a a, $e Io, AVERAGE FORWARD CURRENT (AMPS) ‘Thermal Consideratios 1. The dorating curves of figure § may be used for initial design work; they ae based on square wave operation 2, Une the curves of figure 6 to study the voltage / current / perature paameters. They ae especially useful when study ing Rest sink design and for use with sneaves. To use the ‘curves, ad the reverse power daipation from figure 6 (A). (B) for (C) to the fornard power diespation trom figure 6 (D) EI to find the maximum allowable case 3, Therma runaway is ently possible on marginal designs due to the inherently large reverse leakage of Schottky barrier tects and the fact that reverse power multiple about 132 times for each 5° C of junction temperature increase 2.8: wn SoncondcterSpctetona ato charge nino hc ‘To. CASE TEMPERATURE (°C) Slightly higher cate temperatures can be tolerated when the reverse voltage i lower than that shown in figure 6 (Eh 11 the application is such that DC reverse bias applied nearly 100% of the time, al temperature points on curve 6 (E) should be reduced 12°C. We recommend. that all designs be verified at an ambient temperature atleast 10° C higher than the maximum at which ‘the equipment wil ever have to operate.VARO 30 Amp Schottky Barrier Rectifiers \VARO SEMICONDUCTOR, INC.,P.0. 80x 40676 1000 NORTH SHILOH, GARLANO, TEXAS 75040, (214) 271-8511 TWX 910-860-5178 20 Volt To 45 Volt Vin 640 Volt ¥; At'y = 30.0 Amps Very Fast Recovery Time Standard DO 203AA (Formerly DO-4) Case MAXIMUM, RATINGS (arr, S25" C unless otherwige noted) SYMBOL| vsKe1| vsKs020s] vsK30908| vsxa04os| UNITS DC Blocking Voltage Vow vols Working Peak Reverse Voltage Vem | 45] 2 | 90 | 40 Peak Repetitive Reverse Voltage Vatu FMS Reverse Voltage Vinay | 32 | af a 28 | vos ‘Average Rect Forward Current (Fg. 8) . Wo Tams ‘Ambient Temp. @ Rated Viw. Rey, < 45°C/W ™ | &] © |] & | w | c Peak Surge Curent (non-op), 800 .8Pulse wathiFla.4)| aw | 800 00 Amps Peak Surge Gurrent (none), eycle, SOF (Fg.4) [Tour | 600 300 Tans ‘Operating Junction Temperature T TB io HO °C Storage Temperature Tas =i 10 +150 E Thermal Resistance, Junction to Gase Bee 20 or “At one-half vated Vane Req < 95°C/W ELECTRICAL CHARACTERISTICS (At T, = 25° C unless otherwise noted) SYMBOL | VSK41 | VSK3020S|VSK3030S| VSk3040S | UNITS Maximum Instantaneous Forward Voltage Drop (1) See Fig. 2for Typical ve «| se 510 208 40 vols 125 104 Waximam Instantaneous Reverse Current at Rated Vat) See Fig. fr Typical fonte=r25¢| 4 | 12 Tea 2c 2 mA Te 109°C 150 (i) Pose Test Pulse Width = 200 ne, Duty Cycle = 2% JEDEC Package UR _wwones | wicamerens A | ae ee “8 | 60 = 00s [eo [sti —[—easi os e [eas | on=ns_| a ee [epsom | Taam — | ro eeFig. 1 TYPICAL REVERSE CURRENT (VSK 30408) PULSE WIDTH — 900 wsee ‘Te = CASE TEMP. MEASURED Inf 9/92" DEEP HOLE IN ONE. OF HEX FLATS. IR. INSTANTANEOUS REVERSE CURRENT (mA) os 0 15202590850 YR, INSTANTANEOUS REVERSE VOLTAGE (VOLTS) Fis. 2 TYPICAL FORWARD VOLTAGE g 3 F, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 PULSE WIOTH ~ 200 800 ho 10) os O02 040808 1513 44 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) FIG. 3 CAPACITANCE vs REVERSE VOLTAGE 101000 ——___— vex amas Wer 30308 Sr 30008 T25C TEST FREQ - 100 KHz ‘The current flow in a Schottky bar Bue tm 5 rectilee Carrier conduction and is Not altected by reverse recovery transients due 10 Stored charge ang minority carrier injection as in conventional PN diodes ‘The, Schottky bar CAPACITANCE (9F) 5 reeifior may be consid Gred for purposes of cireut analyst, ar es) diode in parallel with paral capacitance gaia velvet me uncon capacitance. See 1 10 00 Vp, REVERSE VOLTAGE (VOLTS) 74 001 re Semicon Sncseter tee cng wie sce,30 Amp Schottky Barrier Rectifiers fig. 4 SURGE CURRENT vs NO. OF CYCLES (NON-REP) 000 Irs, PEAK SURGE CURRENT (AMPS) 10 100 10 NUMBER OF CYCLES at 60 Hz Fic. 5(4) REVERSE POWER DISSIPATION (VSK 30208) Pa, REVERSE POWER DISSIPATION (WATTS) 70 15 2 am. PEAK REVERSE VOLTAGE (VOLTS) Fis. 5(6) REVERSE POWER DISSIPATION (VSK 20908) eae Pr, REVERSE POWER DISSIPATION (WATTS) io _8 1015 35 25 39 am. PEAK REVERSE VOLTAGE (VOLTS) REVERSE POWER MULTIPLIES 1.32x FOR EACH 5° TEMP. INCREASE USE THIS MULTIPLIER FOR INTERPOLATION BETWEEN CURVES: SHOWN ON FIGURES 5(4), 5(8), 9(0) USE 75°C CURVES FOR ALL CASE TEMP. BELOW 75°C. 75Fic. 5(C) REVERSE POWER DISSIPATION (VSK 20408) bp. REVERSE POWER DISSIPATION (WATTS) os 0182035803 nwt, PEAK REVERSE VOLTAGE (VOLTS) Fia. sie) MAXIMUM ALLOWABLE POWER DISSIPATION ve CASE TEMPERATURE 30 2 4 g 20] fi V8 8005 Van 3 5 VS 2005 ava a 3 09 35 a a Te, CASE TEMPERATURE (‘C) hhermat Considerations: Use the curves of Figure 5 to study the voltage/current/ temperature parameters, To use the curves, add the reverse power dissipation trom Figure 5 (A) (B) or (C) to the for- ward power dissipation from Figure § (O). Then go to Figure 5 (E) to find the maximum allowable case temperature. 2. Thermal runaway is entirely possible on marginal designs due to the inherently large reverse leakage of Schottky barrier retiiers and the fact that reverse power multiplies about 1.32 times for each §°C of junction temperature 76 1951 wo Semcontuces Section wots charg wince a 40) 35| ad 2 testis Loan oy ad Pr, FORWARD POWER DISSIPATION (WATTS) 7 5 W820 sO lo, AVERAGE FORWARD CURRENT (AMPS) Slightly higher caso temperatures can be tolerated when ‘the reverse voltage is lower than that shown in Figure 5 (E) We recommend that all designs be verified at an ambient temperature at least 10°C higher than the maximum at which the equipment wll ever have to opera\VARO SEMICONDUCTOR, INC. P.0. 80x 40676 1000 NORTH SHILOH, GARLAND. TEXAS 75040 ARO Grajeriasns Twx 910.980.5178 30 Amp Center Tapped Schottky Barrier Rectifiers saa 20 Volt, 30 Volt and 40 Volt Vanm, -640 Volt Ve at ip = 15.0 Amps Very Fast Recovery Time Standard To-3 Case MAXIMUM RATINGS WAMU RATINGS ‘SYMBOL | vBK3020T | vsKs090T | vSK3040T [UNITS DG Blocking Vortage Vane Varte Working Peak Reverse Voltage vrwm 2 20 Peak Repetitive Reverse Voltage VrRM MS Reverse Voltage Vacews) | 14 ai Vor ‘Average Rectified Forward Current Fig. 8) to 30.0 “Amps: ‘Ambient Temp. @ Rated Vay. Rasa < 45°C/W TA % 0 °c individual untion Peak Surge Current (non-rep), 300 s Pulse Width (Fig.4)|_IFSM. 500 Amps Peak Surge Current (non-rep), ¥ cycle, 60Hz (Fig 4) IFSM. 300 Amps ‘Operating Junction Temperature Ts = B50 +160" C Slorage Temperature Ts7e =65 10 +150 c “Thermal Resistance, Junction to Case Rese 15 “cw “At one-half rated VaRM . Raya < 45°C/W ELECTRICAL CHARACTERISTICS Crise et TS syweot] vsxso20T | vsxsosor | vsxsos0T | UNITS. ‘Maximum Instantaneous Forward Voltage Drop (i) VF See Fig. 2 for Typical ve ig = 80 Amps 590 15.0 Amps 640 Volts 45.0 Amps. 1.04 ig ig Maximum Instantaneous Reverse Current at Rated Vaya(t) in See Fig. 1 for Typical ip To = 25°C 10 mA To = 100°C i 9% INCHES. 72 Dia. ‘an.a42 40 Min, 038.043 Dia 4:160-1.194 ‘565.675 az6-4a0 | 108241,18 .525R Max, 1338 451-161 Dia. | 324-400 Fronmooarly All JEDEC 70:3 dimensions and notes are applicableFIG. 1. ‘TIPIGAL REVERSE CURRENT g ig INSTANTANEOUS REVERSE CURRENT (mA) os 1 18 2 2% % 3% 40 INSTANTANEOUS REVERSE VOLTAGE (VOLTS) Fig. 2, TYPICAL FORWARD VOLTAGE wes) § 109, oa ig INSTANTANEOUS FORWARD CURRENT ( oof 08 1216-20 2a ‘ps INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Fig. 3. CAPACITANCE vs REVERSE VOLTAGE ‘no vvsks020T PULSE WIDTH = 300 nsec Tg = CASE TEMP. MEASURED WITH SENSOR CENTERED (ON BOTTOM OF CASE. ‘CURVES OF FIGURES 1, 2.9 AND 4 [ARE BASED ON INDIVIDUAL JUNCTIONS. ‘GUAVES OF FIGURE 5 ARE BASED ‘ON TOTAL PACKAGE. PULSE WIDTH Ta = 25°C vvska020T CAPACITANCE, oF) 10 Vp: REVERSE VOLTAGE (VOLTS) 7 «00 wo Samientuctr Spector sje cane ttn Sareea \vsk3030T eee VSK9040T A= 250 TEST FREQ = 100 KH year fomi a St at nett Pageryien setts, lt iebiaiehsticenen tases EPR Awa ‘The, Schottky bar rectifier may be con red for. purposes of eifcult analysis, a ‘eal diode im paratiel with 2 tance equal in'value to the junction tance, See Figure S30 Amp Center Tapped Schottky Barrier Rectifiers 1 ‘psu. PEAK SURGE CURRENT (AMPS) Pq, REVERSE POWER DISSIPATION (WATTS) rp, REVERSE POWER DISSIPATION (WATTS) FIG. 4. SURGE CURRENT ve NO. OF CYCLES (NON-REP) 3.000 Hi Cotta 40 100 NUMBER OF CYCLES t 60 Hr sec FIG. 5( REVERSE POWER DISSIPATION (VSK2020T) __ 2 Ss 1 15 2% 25 30 ‘Vpn. PEAK REVERSE VOLTAGE (VOLTS) Fig. 5(8). REVERSE POWER DiaSiRATION (VOKoEOT) Sa vee 510 1530s Va PEAK REVERSE VOLTAGE (VOLTS) REVERSE POWER MULTIPLIES 1.32x FOR EACH °C TEMP. INCREASE. USE THIS MULTIPLIER FOR INTERPOLATION BETWEEN CURVES ‘SHOWN ON FIGURES S(A}, S(8), S(C)- USE 75°C CURVES FOR ALL CASE ‘TEMP. BELOW 75°C,FIG. 5(C). REVERSE POWER DISSIPATION (VSK3040T) jy REVERSE POWER DISSIPATION (WATTS) S10 15 202580 s 0 ‘Van. PEAK REVERSE VOLTAGE (VOLTS) Fig. 54), MAXIMUM ALLOWABLE POWER DISSIPATION ve CASE TEMPERATURE Rs 3 IS SUM OF Py AND Pp) (WATTS) MAXIMUM ALLOWABLE POWER DISSIPATION | l 02 5076 100125150 ‘To. CASE TEMPERATURE (°C) Thermal Considerations: 1. Use'the curves of Figure § to study the voltage / current / temperature parameters. To use the curves, add the re- verse power dissipation trom Figure § (A), (8) or (C) to the forward power dissipation trom Figure 5 (0). Then go to Fi tre 5 (E) to find the meximum allowable case tomperatur 2, Thermal runaway is entirely possible on marginal designs ‘due to the inherently large reverse leakage of Schottky barrier rectifiers and the fact that reverse power multipies, ‘about 1.92 times for each 5° C of junction temper 80 2 18 We Sonieontcta Season nets chrge wih oe a 4 Fig, 5(0). FORWARD POWER DISSIPATION (WSK3020T, VSK3090T, VSK3040T) a [VY 15 to|__ Pg, FORWARD POWER DISSIPATION (WATTS) 0 6 0 15 2 25 90 lg AVERAGE FORWARD CURRENT (AMPS) Slightly higher case temperatures can be tolerated when the revarse voltage is lower than that shown in Figure 5 (2. ‘We recommend that all designs be varied at an ambient temperature at losst 10° C higher than the maximum at whieh the equipment will ever have to operate,\VARO SEMICONDUCTOR, INC.,P.0. BOX 40676 1000 NORTH SHILOH, GARLAND. TEXAS 75040 vARO rayariesnt wx oto a60 5178 40 Amp Schottky Barrier Rectifiers 20 Volt, 30 Volt and 40 Volt Vanm .620 Volt vp Ati = 40.0 Amps Very Fast Recovery Time Standard DO-5 Stud Mount Case MAXIMUM RATINGS ‘svi 3K 4020 430 | vsk aos | unrrs (At T,= 25°C unless otherwise noted) ae ee ie DG Blocking Voltage Vor Vor Working Peak Reverse Vota Veen 2» » ry Peak Repetve Reverse Voltage Vane AMS Reverse Votage Vanae 7 2 2 Vor “Average Rectified Forward Curent io zoo ro ‘Ambient Tomb. @ Rated Vans Raya 220" CIW Th % 5 wo *c Peak Surge Curent (on-rep), 900s Pulse width Fig 4) [ Tw 00 ‘anes Peak Surge Curent (non-ep), Ye eye, 6OH2 (Fig 4) | tra 500 Amp ‘berating tunetion Temperature T = B50 4180" °c Storage Temperature Tare T5150 7 Thermal Resistance, Junction to Case Rose 10) “enw “Yau S 10V on VSK 4020 oF © T8V on VEK A030 or © BOV on VEK 404, Ry, < BO" COW ELECTRICAL CHARACTERISTICS: SvMBOL | vSKaG20 | VSKAG90 | VSK4000 | UNTS (at = 25°C unions otherwise noted) Maximum Instantaneous Forward Votage Orop (1) % S00 Fig. 2for Typical y= 20ampa s10 i= 40ampe 220 ott ih = 120Amps 60 Taxinum Tntantaneovs Reverse Curent 8 Rated Vay (1 * See Fig. 1 for Typical 2 150 (1) Pulse Test: Pulse Wath = 200 ws, Duty Gyele = 2% ee ee Q A__| 492-5020. | 12,50-12,75 D. 8 | oMin.0. | a6 Mino. co | aa5Mex | ~ 5 72Max [116.200 | 2905.08 | —w2aqas5 | 1072-1151 | 450 Max | 11.48 Max. @ | 4.000 Max | — 25.40 Max. | aeree7 | 1696-17485 (oa) PULSE WIDTH = 900 see ‘Te = CASE TEMP. MEASURED IW. 9792" DEEP HOLE IN ONE OF HEX FLATS, iglNSTANTANEOUS REVERSE CURRENT 101530 vpINSTANTANEOUS REVERSE VOLTAGE (VOLTS) Fie. 2 TYPICAL FORWARD VOLTAGE 3) 8 PULSE WIDTH = 300 psec T= se ro al sg JNSTANTANEOUS FORWARD CURRENT (AMP: 0. OF 04 05 08 Vp INSTANTANEOUS FORWARD VOLTAGE (VOLTS) CAPACITANCE re Rev RSE fa REVERSE VOLTAGE 10000-—# = = 4 = 25°C TEST FREQ 100 KH 3 “The current flow in a Schottky barrier rectifier {'ave to malonty cartier conduction and is not ‘ilected by reverse recovery transients due to ‘loved charge and minority carer injection as [conventional PN diodes. “The. Schottky bartier rectifier may be consid ego pueae fault ana as areal i i with a paraliol capacitance Seal in value tothe juncton capacitance. See Figure'3. ‘CAPACITANCE (oF) "6 Ve, REVERSE VOLTAGE (VOLTS) £82 « 0m vr Samant Spactctere je cange wit rtc.40 Amp Schottky Barrier Rectifiers Fic. « [SURGE CURRENT vs NO. OF CYCLES (NON-REP) Bie are haw PEAK SURGE CURRENT (AMPS) 8 vo 19 NUMBER OF CYCLES at 60 He ia. 5(a) REVERSE POWER DISSIPATION (VSK 4020) °,, REVERSE POWER DISSIPATION (WATTS) 5 10 15 \Vnu PEAK REVERSE VOLTAGE (VOLTS) FIG. 5 op _REVERSE POWER DISSIPATION (VSK 4090) , REVERSE POWER DISSIPATION (WATTS) ou 30159 aw PEAK REVERSE VOLTAGE (VOLTS) T= aC REVERSE POWER MULTIPLIES 1.32% FOR EACH 5°C TEMP, INCREASE. USE THIS MULTIPLIER FOR. INTERPOLATION BETWEEN CURVES ‘SHOWN ON FIGURES 5(A), (8). (0), USE 75°C CURVES FOR ALL CASE TEMP. BELOW 75°C,FIG. 5(C) REVERSE POWER DISSIPATION (VSK 4040) oe Pe, REVERSE POWER DISSIPATION (WATTS) 001520253035 a0 \Vnu PEAK REVERSE VOLTAGE (VOLTS) FIG. 5( MAXIMUM ALLOWABLE POWER DISSIPATION : ve CASE TEMPERATURE. ad 20\ (USE SUM OF P. AND Py) MAX. ALLOWABLE POWER DISSIPATION (WATTS) 3078100125180, ‘T., CASE TEMPERATURE (°C) ‘Thermal Considerations: 1. Use the curves of Figure & to study the voltage/current/ temperature parameters. To use the curves, add the reverse power dissipation from Figute 5 (A) (B) or (C) to the for ‘ward power dissipation from Figure 5 (0). Then go to Figur 5 (€) to tind the maximum allowable case temperature 2, Thermal runaway is entirely possible on marginal designs ‘due to the inherently large reverse leakage of Schottky barrier rectilirs and the fact that reverse power multiplies about 1.22 times for each §°C of Junction temperature 84 = 100 ro samicondutr pectesane sje cuge wie len, FIG. 5(0) FORWARD POWER DISSIPATION 4020, VSK 4030, VSK 4040) 2" | g i §sol 5, / Hag 5 bu As) | , ee i | 7 30 |, AVERAGE FORWARD CURRENT (AMPS) 1. Slightly higher case temperatures can be tolerated when the revarse voltage is lower than that shown in Figure § (E), 4, We recommend that all designs be verified at an ambient temperature at least 10°C higher than the maximum at which the equipment will ever have to operatARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH. GARLAND. TEXAS 75040 vARO rajeriasii Twn 10805 60Amp Schottky VSKS1 rs 45 Volts Varm 60 Volts Vr @ I = 60 Amps cf Very Fast Recovery Time Standard DO-5 Stud Mount Case MAXIMUM RATINGS {its = 25 uness ohne noted) sywpo. uns: Peak Ropoive Reverse Vorane Var % = Waring Pea Ravorse VoTaGe Vane 5 Peak ctid Foward Gurent 50% Duy Gye ir 720 Ta Peak Surge Cort (onop, 172 cyl, 60 Re To 300 “oa Operating Junction Temperate Tr "Bie i Serge Temperate Toe 25165 e Thermal Resistance arcionTo Case Fie +0 cn ELECTRICAL CHARACTERISTICS {aiT, = 25° ules se rte) SYMBOL untrs Mair tanta Foard Vorage Drop) ier a0A “ 70 vets 2 60a1,- 1286 0 tS Yaon er IE Wont, = 256 ae Taso intartaeous Reverse Coren @)Va = 35V 7 30 a Maxim startaneous Revorso Curent) Va = 96Vi Ts = 125 i 0 7A anton Capacanes veev “ 400 oF | Wpical Reverse Recovery Time Eat Irs n= TA Te 125, 79% Recovery to so awe ais of Canas (VS. Te) Veo Sev nae at 10060 vis (1) Pulse test puso with = 300,00, ty cyco 2% {2} Pulse test pulse width = 400nSe0. ouy cycle 190 e+ | EDEC Package 20048 (ormery 00-5) ' Din] Milimeters Inches a | Min, Max. Min. Max (> \\ a | wore |inso | 420 453 8 | 1905 fasao | 750 | 1.000 WD c | 100 fazer 669 688 aid of} — fara f= 450 & | w2eune2a| — | va2aunr2n) — e | 9s | a | 140 175 6 7 ase] — 375 85.-TVPICAL PEAK SURGE CHARACTERISTICS AT T.-25°C i “ | T | | fC i TH | | TT i g ie ' . en 000 seco 4,000 t ds 000 mi 100 ‘0 ho 7 5 ° 1 vacvours) ‘vax RATING VS JUNCTION TEMPERATURE is Ue ieee ese [genet | eres cee ace] g : as : g : t | Eo : - 4 3 —~ 3 i » i : 41 cies | | = om a ew! remenarune © 86 101 vr samionatr. Speen sajeio cage wie60 Amp Schottky = ® “TRANSIENT THERMAL RESISTANCE, voce, ‘aL revere Sunacrensncs $90 pe ee z 3 18 a we mevence vourad,vW0LT8) voces ‘ansioe ERAL REBPONSE | pa - “0 70 mmm Km Im 87yon st TYPICAL RANGE OF FORWARD CHARACTERETICS FORWARD CURRENT, (AMPS) 42.345 67 8 9 11112 123 4 5 6 7 8 8 0 142 FORWARD VOLTAGE, v,, (VOLTS) FORWARD VOLTAGE, ¥,,(VOLTS) ysxs “TYPICAL RANGE OF FORWARD CHARACTERISTICS ‘eare 8B 101 ve Someone Sectonns wéptn carpe iheARO SEMICONDUCTOR, INC.,P.0. BOX 40876 1000 NORTH SHILOH, GARLAND, TEXAS 75040, (214) 271-8511 TWX 910-860-5178 ARO 60Amp Schottky — Braided Lead VSKSIB 45 Volts Vaam 65 Volts Vr @ Ip = 60 Amps Very Fast Recovery Time Standard DO-S Stud Mount Case with Braided Lead [MAXIMUM RATINGS: (At, = 25°C unless otherwise noted) ‘SYMBOL [Peak Rpative Reverse Vorage. Vane 7% [Werkang Peak Reverse vonage Var 35, [Peak Rectited Forward Gurent 50% Duly Cyclo Te 120) Peak Surge Curent (nonep), 1/2 eye, 60 He Tre 3007 Operating Junction Temperature 7 Testo 75 *c ‘Storage Temperature Tore 65 19 165) e Thermal Resistance, Juneion t Case Fe 10 Tew ELECTRICAL CHARACTERISTICS (ALT, = 25°C unless otherwise noted) SYMBOL unis: Maximum Instantaneous Forward Votlage Drop (7) 160A. v 075.3) Vos 1. 60A,7, = 125% 05, We 1208 002 1,= 120A, T, = 1250 0.89 Maximum instantaneous Reverse Current @) Va = 36 20 mA [Maximum instantaneous Reverse Current (2) Vj, ~ S5V: cs 200, mA. el Junction Capactance Va= 5 co 4000 oF Typical Reverse Recovery Time n= n= TA. Te = 125°C, 75% Recovery te 50 soe Rate of Change (PIV VS. Time) Va = 35 V mae, evst 1000 wns (1) Pulse test: pulse width = 300uSe., duty cycle 2% (2) Pulse test: pulse width = 400).Sec., duty cycle 1% (@) includes voltage drop across flexible lead a JEDEC package 203AB (formerly 00-5) es > reer penn LA \- Dim. Millimeters Inches Ne me F a 178} — 330] 070] — 120 pe eae 2 ged) eae eee t c | 3a = 150 - Bi i) D | 762} 1016 | ‘300 400 i} e | — | aed.) — | 103d0 ; NI aaa gn ig ne & |ro7e | 50 | ee | as H [1700 | sar | 609 | ‘680 si_| e968 | sore0 | 700 | 4000 “Other lengths available on request(PEAK SURGE CURRENT (NOM-REP), nw, (AMPS) NUMBER OF CYCLES AT 60 He vex 510 ‘TYPICAL JUNCTION CAPACITANCE VS. REVERSE VOLTAGE a g88 10 vsK 58 (MAX) RATING V8. JUNCTION TEMPERATURE. vaqvours) ‘PEAK REVERSE VOLTAGE, PR, (VOLTE) ‘TEMPERATURE 90 101 vr Sanur Spctcstae niet cage60 Amp Schottky — Braided Lead “TRANSIENT THERMAL RESISTANCE te) veces mat never vw we : 6 3 : ra pe ° 2 , «8 a a © 8 0 6 REVERSE VOLTAGE, v VOLT) vacsre ‘RANT TEL RESPONSE +» 00 women x vo Tene a1vex sie ‘TYPICAL RANGE OF FORWARD CHARACTERISTICS. Tae FORWARD CURRENT, |, (AMPS) 1 294 $8 7 8 8 wt te FORWARD VOLTAGE, V,, (VOLTS) vox si8 petae [FORWARD CURRENT, (AMPS) 2 94 5 6 7 8 @ 1009 12 FORWARD VOLTAGE, V,, (VOLTS) 92 tons re Samantctr Specter jo cage thu nee'e ARO SEMICONDUCTOR, INC., P.O. BOX 40676, 1000 NORTH SHILOH, GARLAND, TEXAS 75040 VARO (214) 271-8511 TWX 910-860-5178 Tae 30 Amp Schottky Barrier Rectifiers VSK31, VSK32 50 Volts and 60 Volts Vi. 30 Amps 175°C Junction Operating Temperature z Exceptional dv/dt: 2000 V/,s 7 04 Package (MAXIMUM RATINGS ALT, =25°C unless otherwise noted) SYMBOL vsKst vsKs2 Unite [Peak Repoitve Reverse Volage v, 0 30 Vols [Working Peak Reverse Voltage Vow 50 40 Volts Peak Recified Forward Current & 50% Duly Cycle i. © ‘Amps Peak Surge Current (non-rep), cycle, 60H2 i, 200) Amps [Operating Junction Temperature te 510+ 175 °c [Storage Temperature Too = 6510+ 175 c [Thermal Resistance, Juncion to Case Re 18 "ow Eiecrieal Characteristics (ANT, =25°C untess otherwise noted) SYMBOL VSK3t vsk32 NTS [Maximum instantaneous Forward Votage Drop 25 180 «TSS Amps vy, oes 089 Voits E60 Amps 080 075 070 [Maximum instantaneous Raverse Current sc ; 10 nA 250 I 2 |= 150% 50 [Junction Capacitance Cc 2000 pF Fypical Reverse Recovery Time ata. 1-125, 75% t IL =H.= 18. T= {250,75 0 nsec ae of Change (PIV vs Time Fat azohanoe y viet 2000 Vins Maximum Repeitive Peak Raverse Current [Bon sec puset= 2kHe baw 4 amps SEDEC Package [ur INCHES MILLIMETERS: en—w07e | eosin TOT anos — fee worms | ee Shae \ Extremely Low Leakage at High Temperature High Surge Capability Very Fast Switching Speeds Economical T0220 Package Glass Passivated [MacMUM RATINGS : : KAtT,=25°Cunlese otherwise noted) | SYMBOL | VHEIMor | vHEtacz | veto | vHEV404 | UNITS IDC Blocking Vttage Ve |Working Peak Reverse Votage vm 50 10 | 150 200 Vols Peak Repeitve Reverse Vollge vz | AMS Reverse Votlage Mies % 70 | 105 140 Vor Peak non-epetive Reverse Ve T eon ‘ota | | 120 180 sett ite FRecilied Forward Curent Pesinon Bost cele 10 Taree Peak Surge Curent (non-op), eevee, fone one lo 150 "amps [Thermal Resistance, Juncion io Case aT 235 "ow (pein and Serge Tenpereve Tote _| Ses tie ee uns. 7256 T= i056 09 08 oars 0895 Vols 10 oa 4 $3 5 50 HA 500 Maximum Reverse Recovery Tine * NPavaAs y= tArlg,= 025A 4 35 soe [Maximum Capacitance. V, cr 13 F T0220 ‘aes Tweens —] ‘TAB COMMON TO, 3 TERMINAL q ree ~—| TAB a o ie P - r x ea i 1 Me. ° are ie N ° sowie —| sear {@) Dimensions ae typical values uriess otherwise specified.100 1009 a4 2 Fo : Trae 3 8 om 3 g ne 5 aa 3 7 § 8 2 INSTANTANEOUS FORWARD VOLTAGE OROP Vy VOLTS eee os ar s soc HEAL CAPACITANCE V8 REVERSE VOLTAGE arian uctionea eres FIGURE 2 tod 200 SURGE CURRENT VE OF CYCLES HON REP) i i 3 a zt Far 100 eRe : Puse 3 * a i eee é ricune 2 3 PUT CURMENT v8 Ase rewwenarune " 0 0 URE 4 eo 8e oe i FIGURE 5 181 Vo Samionditr Speckten unl ung honY \VARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH, GARLAND. TEXAS 75040 ee (214) 271-8511 TWx 910-960:5178 20 Amp Center Tapped High Efficiency Rectifiers ‘50 Volt, 100 Volt, 150 Volt and 200 Volt Vex 20% Non-repetitive Reverse Overvoltage Protection Low Thermal Resistance Extremely Low Leakage at High Temperature High Surge Capability Very Fast Switching Speeds Economical T0220 Package Glass Passivated HART RATINGS [AtTy=29C unless otherwise notes) | symeo. | vnezior | vaezw2 | viezeo | vuezws | uns DC Blocking Voltage Vow [Rosin fea Reverse Votage \ 0 100 150 200 | Vote Peak pete Reverse age fo FMS Reverso Votage rs s 7 165 on ak ronrpeve Rave re ee ee average Riiod Forward Curent average Fifiod Forward Cure 4 2 ‘Anos Pook Suge Gare TEN, i ia ina Thermal Resistance, sncion to Case ie ew pean aneSerageTorperte | 7,1, Teas c Electcal Characteiatcn AT Cumesesterwiee noted) | SYMBOL units Iain nstaaneous Forward Votage 1.56 fcrdode "to aK ‘og Vu Sos Vos 0 a 1 0 WA tea 500 L 35 ‘nsec. © 6 F Sara] — [wens [an erens To220 a 415 Max 1054 Max TAB COMMON TO. 8 108. 274 A K c 248 63 fens fe 8 4 Ef o 0.605 Max 15.37 Max € ase tae 2 g F CesoWer | 61 war D S 3.100 254 ° a 300 S08 i = ‘ 088 Ta i ‘oma —{-S ma e Et Tos er ti Soesar—f pets H Suet oe 1 3 M4 363 N {ay Dionsions sre ypcal values Uniess 101 otherwise spectied102 _Fotano cunnent vS FoRWARO VOLTAGE PER 1006) z4 i 7 i i & sinuatin ene arnt VO FIGURE 1 3 CCAPATANCE (FF FIGURE 3 REVERSE LEAKAGE gu (AQA? LUNCTION TEMPERATURE. T, 6) FIGURE 2 _suR0E CURRENT vB NO.OF CYCLES WONRED. MBE oF CYCLES AT 00 Hz FIGURE 4 2 a Ne to, ourPUuT cunnenT (anes Ps Nie FIGURE 5 101 re Samant Sentetens nec change ennvaRO VARO SEMICONDUCTOR, INC., PO. BOX 40676 1000 NORTH SHILOH, GARLAND. TEXAS 75040 (214) 271-0511 TWX 910-860:5178 30 Amp High Efficiency Rectifiers 50 Volt, 100 Volt, 150 Volt and 200 Volt Very 20% Non-repetitive Reverse Overvoltage Protection Low Thermal Resistance Extremely Low Leakage at High Temperature High Surge Capability ‘Very Fast Switching Speeds Glass Passivated Standard DO203AA Case (formerly DO4) ae ‘One alae MANO RATINGS 1 (At = 23 unless otherwise noted) syweo. | vie7o: | vue7o2 | vievoa | Heros | UNITS [DC Blocking Votage Vie Iworking Peak Reverse Vonage Jeetes 0 100 so | 200 | vote Peak Rapettve Reverse Voage | ve [RMS Reverse Voltage [ 5 70 105, 440 Volts Peak nor-epaiive Reverse 7m ; [ese traltagy | 120 wo | 240 | vot [average Restiiod Forward Curent artis. & 30 Amps: Pak Surge Caren (oon), Peak Surge Cy ia 00 amps Thermal Resistance, Junciion to Case R i cw [Operaing and Storage Temperature Sate % [Range To Tora, 65° to + 175° c [Electrical Characteristics syMeot uns T2256 Fa aes Vw 3 ae ors 18 120 tru Reverse Caron ata, - 25°C Naw Bz BA 756 | Waxirurn Reverso Recovery Te, i = V0. I= 1A, Inge = 0.258, ‘ 3% i [Maximum Capacitance, V, = 10V et 500 [oer E F “e | owe | aaa | es aw] 03818 103or OUTPUT CURRENT (AMP) ‘OC FORWARO CURRENT VS TYPICALINSTANTANEOUS FORWARD VOLTAGE 100] : L 5 ys 150" : Teen 7 Maxim os 06 or 08 08 10 i112 TYPICAL INSTANTANEOUS FORWAAD VOLTAGE OROP. Vw (VOUrS) FIGURE 1 TYPICAL CAPACITANCE VS REVERSE VOLTAGE 1000 TEST PREG." HooKite 7 1, *25"C 109 Vp REVERSE VOLTAGE FIGURE 3 (OUTPUT CURRENT VS.CASE TEMPERATURE a0 25] 10 Ql aE 3 76 100 495 135 ‘Te » CASE TEMPERATURE, (* 6) FIGURE 5 104 0196s wre tmieontca Scar ieee wih te, REVERSE CURRENT VS JUNCTION TEMPERATURE 1000) RICA = MAXIMUM 10 REVERSE CURRENT, ty: 44? 03590750128 T8178 AUNCTION TEMPERATURE. T, .(* 6) FIGURE 2 SURGE CURRENT VS NO. OF CYCLES (NON-REP.) Ira: PEAK SURGE CURRENT (AMPS) wy 10 00 NUMBER OF CYCLES AT 6oH? FIGURE 4ARO SEMICONOUCTOR, INC. .0. BOX 40676 vaRo NORTH ay atvastt Tk SToeeo S178 50 Amp Center Tapped High Efficiency Rectifiers 50 Volt, 100 Volt, 150 Volt and 200 Volt Vans 20% Non-repetitive Reverse Overvoltage Protection Low Thermal Resistance a Extremely Low Leakage at High Temperature SS [40 70.16 ke -0-4 " H_[-10001A-| — 2354 1A. ve sms ect a a mes re 2 nt 20° fe ctr Se oT Ba ans NOTES: [18m coe, Seeconaat 20096 or SAGHIOR. 113‘Dc FORWARD CURRENT (PERCENT) VS "AMBIENT TEMPERATURE (FREE AIR) ‘TYPICAL INSTANTANEOUS FORWARD VOLTAGE DROP (PERCENT! VS OC FORWARD CURRENT (PERCENT 7 7 : € 5 5 & & 5 as En & 60] i a 7 in thsr ndeovedv i i. 7 7 Ss SSS Aiminn ToarenaTune PRES ATA) Sek NEaNTRics ane octae come a names ‘TYPICAL REVERSE CURRENT VS AMBIENT TEMPERATURE AT Vann 100] z E 100] : gz 10) & wo 6080100 120~140~—~160 AMBIENT TEMPERATURE, Ta, (°C) FIGURE 3 114 can are Seiconaute Scheie eee rg wat te, RECOVERY WAVE FORM RECOVERY TEST CIRCUIT FIGURE 4ARO SEMICONDUCTOR, INC. P.O. BOX 40676 1000 NORTH SHILOH, GARLAND. TEXAS 75040, vARO (214) 271-8511 TWX 910-860-5178 any 089 vano | Vangery | Saure” | oatiars?. | | _varo ciate, | RAY | “SRE | SRE. || we [ae [ome pe |fwm [oie tow Te pea ted teen lf mot Se) | ec oe wa ae oe Pe] eee seas tan os | ee eee es on es | ose lf sao Tn ae sf 1 asso | eof Ese ssn aoe |e age | tao ot | osc eee [ee IE xe ETso1 =| ETE I esc neo | USI ae jet oar | | ea |e ee EN SATE aw Steere a meted Phin | [Mecocrnene cure @ rive HEE. « | Bit “gee HDiARReconeny to Loma eas 2 24 | 250 nanosece Ambient Operating Temperature Range, Tx =55°C to 80% me ae Lae i ee Me ni Soe See | eo cae ‘This series offers gh vole ranges in inimum see, epoxy encapsulated pacages with tow leshage curt. ratings are *Fast Recovery Series ‘bined without the tse of special Ret sinks OF mounting te ones, foes Ge Nate 3) 1 Sats 00 dances Fast Recovery Saris. ‘Tots reciers can witatand 0 G's shock and vibration of 100 3 anime ten end avian tarperatre for zldeing.% Inch from HE wih a peak acceleration of 10 6, Seearatnetads ses ‘These recites ae ecicaly and ecanonicaly suitable for ust, Weparted ver 10000 vinch In length vies shoud be immerted teivision recever, electrostatic power supplies, electectate "i cot tecncapnueied ies, elecsttie ai fies and peciptaa, an eats Tay {ibe power supe. 115| [ee 116 « 101 wo Semone Soctotone meats ge wih neeARO SEMICONDUCTOR, INC.,P.0. 80x 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 vaRo Biel ancneclneaetae High Voltage Diffused Silicon Rectifiers VF Series ae a ‘Minimum Size SKV to SOKV (Varn) Low Leakage Current 250 Nanosec. Reverse Recovery* Pemcrverse | Soret | vouge Srsp Pea ARO ‘Voltage PIV @we' | @25Candi, Case, vARO ‘Voltage PIV Case Typene. | “ay Wee” | sive | pene. | “Wvoey Es a soem a |v | same x ra 7.000 ATT x 0 | 7.000 — a] wrio [000 ns evs [ 12000 a] wriex | a m ves S| “wrise [tao ao vr [wean [ao i vies ‘8 —[—wrasx—[ 28.00 3 ve | vesox | — a0 00 e ra | vevox—| an e [oe ves] a0 : ELECTRICAL CHARACTERISTICS te eit AT, = 25° (unless otherwise speci) eee et Wax. DE Reverse Curent @ ated Van ™ ba fs and 25°C, toe LA : a Max. OG Reverse CUTER @ RST Vin ————— gg Bite te i oe x pea iter ee ~ me Reverse Recovery Time, @ y= OmA and : i EXRSSU GENE | Aone te Seek “Ambient Operating Temperature Renee, Ts Bie Pe. : “Bee _ ‘Storage Temperature Range, Tow eee meen Ei eee it Ove Se Coren, shape st Recovery Series 17SERIES VF ‘The series VF high voltage and high voltage ry {fast recovery time diffused silicon rectifiers are designed for industrial and. commercial ‘pplcations that require high reliability at an economical cost. Fel ase ee te 13 low leakage current, All ratings are obtained = without the use of special heat sinks or Eo ‘mounting techniques. (See Note 3) 8 os] ar cea : ate eee ; : tees o im 1 ja aces 7 5 4 (tt r | | co ot i a nn rare i, 271 eae ee aries 118 16: vo Semone Spsteton spl choge ihn nee\YARO SEMICONDUCTOR, INC. P.0. 80x 40876 1000 NORTH SHILOH, GARLAND, TEXAS 75040, pent nn eno, earn High Voltage Rectifier Assemblies For X-Ray Apparatus a Varo Semiconductor has designed this series of high voltage rectifier assemblies for usa in x-ray applications. ‘The number of diodes mounted in series on a glass- epoxy printed circuit board is determined by the required peak reverse voltage. Each diode package contains a stack of controlled avalanche wafers. Sea RATES : (AtT,=25°C unless otherwise noted) fee eee tte ieee) ae 3 oe = = Se a oe z Ir fe emies seer mace aoe nca veer geneoe OU av noeee ree ELEPTIGA, CAPAGTEMETSS Swsot] wens | warns | sonar [unTs teense ere os —t—= = te conse — (> GHBHaRAREBOHAE om [wens LMETERS on a 6.00 15240. x 5 a 985. 3 c 50, 7270 rt ro 00. 25.40 b eT 56. 14 e e cn 238. F G_ | ea2Nc - S | 376.24 = 4 a 5.64 148.35 0 z Ec 150.58 - x ‘Clowet metric equivtent supplied on requett 119Although purchase of the com- plete x-ray board assembly is paaectgea tite recommended, the high voltage wae suslenohe diode sed. 31 ¥er0, 1 3 eater ed r 2 “100 0% eeteyinanene — 6 0.20.04 Dia, 76-86 Pres aoe nus onerasopeiagy Ten SYMBOL 1499-5 UNtrs Fan Rove Vang Operating Vatooad z 7 Penk Revere Voltop- Ter aver . ev Pook Surge Currant, Gycle GOW (Non Reo) (Fa 3) Test 20 "amen Peak Burge Goran 10 Cyclo OOH ‘a @ ae 3 Forward urrent in 3° ot (Nove (Fig ‘e 720 mA Tunction Opwatog and Storage Teraratore Ra Taste Tivo a8 7 Tascam nananabun Forward VOT BOP IF=EOMA Yaw 2 Var ‘anima Revere Garena Vato ‘hw 7 a DC FORWARD CURRENT VS AMBIENT TEMPERATURE 7 Zw Ew Bw § B 2 120 101 vr samen Spetenons strange ite me 109) 10 PEAK SURGE CURRENT (NON-AEP) Fioune2 PEAK SURGE CURRENT (PER LEG! VS NUMBER OF CYCLES AT 60 Hz (SINE WAVE INPUT) AND T=25"C NUMBER OF CYCLES AT 60 Hz 10 8 100ARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 ARO (214) 271-8511 TWX 910-960-5178 High Voltage Rectifier Assemblies For X-Ray Apparatus nett ‘Varo Semiconductor has designed this series of high voltage rectifier assemblies for use in x-ray applications. at ‘The number of diodes mounted in series on glass- : epoxy printed circuit board is determined by the required paw 2 Peak reverse voltage. Each diode package contains a stack of avalanche waters. * fous eaaves emg sywpo. | 4701 ro | 700 704 | uns Peak Reverse Votage - Operating (NOTE 1) Vases % 720, 7. 160 WT Peak Reverse Votage - Test Va 100 135: 170200 wv Peak Surge Currnt, vz Oye af 60 Ha (Non Rep) Trew 2 Amps ‘Peak Suige Curent. 10 Cycles at 60 He lene 6 ‘Amos (DC Forward Curtentin 55°C oil (NOTE 1) ie mo A “TeTes =H 0 TS WaRRANAERERENE =] 1] © | “125 | “125 | “125 | “125 | 3,18 | 3, 16 5 | ar| :ter| tar | ‘rer |°a0° | Sao A — 197 | .197| .197 197, 5 5 & | sver| ‘var| 7er| er | 20 | 20 121Although purchase of the complete aS EE xray board assembly is recom- ate ra mended, the high voltage, avalanche eo | «0 1526 [0 [408 diode used, a Varo type 1463-3, ef noe | may be purchased separately. ‘BODE NASIMUM RATINGS AND ELECTRICAL CHARACTERISTICS wes ry Fook Resor Vag - Operating 2 w [Peak Revere Vorage Test 70 co Pane Suge Cert Cy at Sr on Rep) (i. 2 = ‘anes Pook Surge Cures. 1 CyGeS at Ce 6 ‘anes DC Foard Guerin 55 oF ae 1 (i) Zo oA Jencon Opeabg and Stage Tenperate Rage = +18 © bate Er. 10a se Pe With = 2 aes Mesum irstaaneous Forars Vtage Do a SOA 2 ots Masmun Reverse Cutt a Van, 1 my 0c FORWARD CURRENT VS AMBIENT TEMPERATURE 250 = G 10 2g 10 3 8 ee al ° 0246080 100120140 AMBIENT TEMPERATURE, Ty. ’C) SEE NOTE 1 FIGURE 1 122 1501 re amieonauctor paceaor seach wiot ce. PEAK SURGE CURRENT (PER LEG) VS NUMBER OF GYOLES AT 60 Ha (SINE WAVE INPUT) AND T,=25°C 100 10 PEAK SURGE CURRENT (NON-REP), rs (AMPS) afrsed] ' 0 700 NUMBER OF CYCLES AT 60 He FIGURE 2 ARO SEMICONDUCTOR, INC. RESERVES THE RIGHT TO MAKE CHANGES IN THESE SPECIFICATIONS AT ANY TIME AND WITHOUT NOTICE, IN ORDER TO SUPPLY THE BEST POSSIBLE PRODUCT.\VARO SEMICONDUCTOR, INC, P.O. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 ane (214) 271-8511 TWX 910-860-5178 High Voltage Power Rectifier Subassembly Diode _ Hess ‘The H655 controlled avalanche subassembly diode is designed {or use in the buildup of high voltage power rectifier assemblies, Total assembly cost is greatly reduced by the use of diodes with Controlled avalanche junctions which eliminate the need for Fesistors and capacitors required when several. non-controlled avalanche diodes are connected in series ‘Typical applications for assemblies using the HO55 include industrial electrostatic precipitator power supplies and radar power supplies SYMBOL Hess, uns Pook Ravers Voltage — Operating (Nowe 17 Vateoen 33 Ww Pook Revere Voltage = Test Vicon 70. ru Pook Surge Current, ¥ Gyete at Mz (Won Reo! (Fig. 1 tesa 50. ‘Amer Pook Surge Current, 10 Cycle at GOME (Fig. 2) Tes 15 ‘Ame “Average Forward Current in 25°C Oi (Nove 1) Fig 1) To 7 ‘Amo ‘Avalanche Energy, 100 see Pulse Width a outer “Arabiant Operating Temperature Range Th E510 1100 °C Storape Temperature Rage Tsra T5510 0125 % NOTE 1: To wshieve rated current and voltage, dlodes mutt be submerged in Shell Dials Ol, AX Electrica ntulating Oil or aqulvaant. ELECTRICAL CHARACTERISTICS (ALT, = 25°C Unless otherwies noted) SYMBOL Hess, unrrs| ‘Maxima inatotaneous Forward Voltage Drop at tp = 168A Vew 6 v Maximum Reverse Current at Vivien) Tr 1 BA Ti | WNCHES | WiLLNETERS. a 175 445 8 20 5.06 € 8 in 1727 ° 040 Di. 102 te COLOR BANDS =| ier 2, eSitooe tae oe wa8 = ¢ a 1112 GF 123[AVERAGE FORWARD CURRENT VS. ‘AMBIENT OIL. TEMPERATURE 24 22 20 18 18 1. 12 10 2 Se. re ee ee ‘AMBIENT OIL TEMPERATURE, T,,("C) {o. AVERAGE FORWARD CURRENT, (AMPS) — RESISTIVE LOAD FIGURE 1 PEAK SURGE CURRENT (PER LEG) VS NUMBER OF CYCLES AT 60H® (SINE WAVE INPUT] AND Ta = 50°C 100 ‘eeu. (AMPS) 10 PEAK SURGE CURRENT (NON-REI © 1 10 700 NUMBER OF CYCLES AT 6oHs FicuRE 2 LARGER CELLS ARE AVAILABLE IN THE SAME DIODE PACKAGE IF GREATER AVALANCHE ENERGY AND HIGHER SURGE CURRENT RATINGS ARE NEEDED. 124 1981 Semteontuctor Sncestr echt wie tee\VARO SEMICONDUCTOR, INC., P.O. BOX 40676 1000 NORTH SHILOH, GARLAND, TEXAS 75040 VARO (214) 271-3511 TWX 910-960-5178 Fast Recovery High Voltage Power Rectifier Subassembly Diode The He50 subassembly code is designed for use in the buldup of high vollage power rectier assembles. Total assombly cot Is ‘greatly reduced by the use of diodes wilh controled avalenche Junctions which eliminate the need for resistors and capacitors re. ‘ured when several non-contvlled avalanche diodes are connected ‘Typical applications for assembles using the H850 include indus- UWatelectrostatiepreciptatorpower supplies and radar power supplies MARU RATINGS (AUT A=25°C unless otherwise noted) SYMBOL eso UNITS Peak Reverse Vorage — Operating Vane = Ww Peak Reverse Volage — Test Yate 70 RV Peak Surge Gurrent, ve Cycle at 60 He Now Rep) ig.) ioe 35 Amba Peak Surge Current 10 Gycle at 6ORe Fig. 2) To ¥ Amps “Rerage Forward Curentn 5° OF (Noe 1) Fg) ‘o oF, ‘Amps | ‘Ambient Operating Temperature Range Th aeieesT "e Storage Temperature Range Te = ast6 HS °c ELECTRICAL CHARACTERISTICS (At T,=25°C unless otherwise noted) ‘SYMBOL Heeo ure ‘Maximum instantaneous Forward Volage Orop ate TA i 1 v Maximum Reverse Current al Voy a 1 7A Maximum Reverse Recovery Time er 300. ns ima [INCHES | MILLIMETERS f A 175 44.45 yt | 2 20 5.08 lo a 28 Mn W27 it o 40D 02 3 =e aaa [eae rT ee ne] r+ —_-coLoR anos on CATHODE. ENO 125LARGER CELLS ARE AVAILABLE IN THE SAME DIODE PACKAGE AVERAGE FORWARD CURRENT VS AMBIENT TEMPERATURE tw on (AMPS) — RESISTIVE LOAD. 5 Bos 3 : | 5 | z 10040 AMBIENT TEMPERATURE, (6) riaune FORWARD CONDUCTION TIME SWITCHING -05A REVERSE RECOVERY -2a—+— CURRENT RECOVERY WAVE FORM FiauRe 9 126. 1001 wo samienducr Spectator sites nctarge wos rt, IF HIGHER SURGE CURRENT RATINGS ARE NEEDED. PEAK SURGE CURRENT (PER LEG) VS NUMBER OF CYCLES AT SoH (SINE WAVE INPUT) AND T,=80°C. 3 PEAK SURGE CURRENT (NON-REP) Ij (AMPS) 1 10 60100 NUMBER OF CYCLES AT 60H2 FIGURE 2 ADUUST FOR 1A FORWARD CURRENT POTTER & BRUMFIELD DWV. AMF SHIMP-4200-71 10210 300 NON-INDUCTIVE SOW +8 covoc mg NOTE 19. Score 24, 1a NoniNDUCTIVE a NON. INovcrivE "ADJUST FOR 2A ‘30 voc REVERSE ‘CURRENT Iconsrant| Wourace SUPPLY TYPICAL RECOVERY TEST CIRCUIT FIGURE 4YY VARO ARO SEMICONDUCTOR, INC. P.O. 80x 40876 1000 NORTH SHILOH, GARLAND, TEXAS 75040 (214) 271-0511 TWX 910-060-5178 High Voltage Power Rectifier Assemblies All Diodes Contain Controlled Avalanche Junctions ‘Standard Types With 100kV, 125KV, and 150kV Operating Peak Reverse Voltage Center Tapped Types With 200KV, 250kV, and 300KV Operating Peak Reverse Voltage Avalanche Energy of Up To 7.5 Joules With Standard ‘Types and Up To 15 Joules With Center Tapped Type: 2. Amps DC Forward Current This series of high voltage power rectifier assemblies has bbeen designed for use in electrostatic precipitators of the type used for removal of solid pollutants from the emission of industrial smoke stacks. Most currently available high voltage power rectifier assem. bilies rea transients equally across all diodes. By using controlled avalanche junctions, Varo Semiconductor has eliminated ‘the need for resistors and capacitors making possible a very substantial savings in complete astembly cost. ‘Additional applications for this series include radar power supplies. WAXIMUM RATINGS (At Tq =25°C unless otherwise noted) IsymBot| H656 | H6S7 | Hés8 | Hese | He6o | H661 | UNITS ee ee we a Fa ae ee aaa mer Ta a 7 a SS Te : 7 Saac Raat GEC ee TERT = ty Sa goes eee ee eee FSS ST I rr aT a NOTE 1: To echleve rated cuvent and voltage, oder must be submerged in Shell Dale Oi, AX Electrical Inalating Oi! or equivalent. ELECTRICAL CHARACTERISTICS EE Aa Nee eee ese rpc] nese | nosr | nese | woso | vee | oor | UNITS Merimam instantaneous Forara Vere eee T vey | azo | aa | 260 | 20 | oo | ozo | vom sro Res CORREA Va eg ey r mY Tie oY Oia Pa Bara [is | ef eae Tones (METERS ura] ose [was [nes esr | se abo [es bars 38 [a8 2 ss ts tar [er E Bs | 6x5] 638 F |_| 305 [305 a | 2 | 30 SoH [sn H | 60180] 160 wee a a A 127[AVERAGE FORWARD CURRENT VS PEAK SURGE CURRENT (PER LEG) VS NUMBER OF g Eu WHENT ON TEMPCRAGURE et Geasni ta panacea tnt Ga i i 20 : Ris £ Zis [ot : Baa : B10 & : : t 3 ° 3 ge. § Z2 Z g 0 i : ee eo 10 100 + ‘AMBIENT OIL TEMPERATURE, T,, ("C) NUMBER OF CYCLES AT eo}: Figune + rioune2 LARGER CELLS ARE AVAILABLE IN THE SAME DIODE PACKAGE IF GREATER AVALANCHE ENERGY AND HIGHER SURGE CURRENT RATINGS ARE NEEDEO [——aees TERS TA rase_[ reo va 7 aoe 5 so [ ea = epee pe Le Sasser a sere = a5_[ 65] 635 i : o So sar_{ ser cE faethe: 7 ee ne 2 : a Sa[ sor {i Seine tatieemo Tere cation . eee eee en 128 1 vo Smicantucter Sueno nico changed ten\VARO SEMICONDUCTOR, INC.,P.0. BOX 40675 1000 NORTH SHILOH, GARLAND, TEXAS 75040 vARO Gray a7iasri TWX 910-0605178 High Voltage Diffused Silicon Power Rectifiers a 2KVto8KVPRV 300 Nanosecond Reverse Recovery Time on Fast Recovery Series Low Leakage Current 1to2 Amps DC Output Current T eax | max rorwaro| oc peak | MAX FonwaRD] oc epermve | VOCIAGE OnOP | FWO. CURRENT nepermive| VOLTAGE DROP | FAD. CURRENT vano| “nevense. | “ox-sooma varo | “reverse | “ou-sooma | “@taoe parr| voutace | We vours) vant | Vvourace | Yewours) | S,aars) NO. | Vonikv) | "ic. NO. | Vina) | iG.) Re) ve 20 2 a 4 2 lve 20x. 2 43. 2 veao | a 6 2 lveaox | 2 2 2 ves [a 3 2 lveax | + 28 2 veso | 5. wo 1s vesox | —s 120. is veso | 6: 12 1s fvesox| 6 a 1s 0 F . Ivo aa 1 vee [2 i Hi lvesox] 6 168 Hi ‘MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS : AT T,@ 25" (Uniess Otherwise Specified) ‘SYMBOL ve eves! studded Pk ge Cen ete of 6 ones) 98 ve = = oy Maximum Revere Recover Tie, = Ang, a= Amp. ty =08A (Fes) | te fa ee oes Gaeg Tose Pats te Sore = [ETERS] iSeir 5] Tiare 2 sone E rete ee F ial wae aarti at 2 sae a rhea 129‘TYPICAL FORWARD CURRENT VS FORWARD VOLTAGE DROP MULTIPLICATION FACTOR 204 19 0 DC FORWARD CURRENT. fg AMPS} FACTOR K MAK. vy = WYP. Vy oon secre cere: aLTipLication Facton FIGURE 1 PEAK SURGE CURRENT VS NUMBER OF CYCLES-VC SERIES A gs 8 PEAK SURGE CURRENT (NON REP), psy. AMPS! af isec| r 6 NUMBER OF CYCLES #60 He FIGURE 5 130 181 wn Semcon Specteaton peta chrge wo 700 aus) (OC FORWARD CURRENT, PEAK SURGE CURRENT (NON-REP), Ipgy, (AMPS) DC FORWARD CURRENT VS HEAT SINK TEMPERATURE nore uersuicbee crease MEAT si Ew 200851001900 165185 ERT SINK TEMPERATURE (°c) FiGuRE 2 PEAK SURGE CURRENT VS NUMBER OF CYCLES-VCX SERIES 7 10 NUMBER OF CYCLES at 60 He 100 FIGURE 4192 to vo semtondutr. Spectre sje urge totes,ARO High Voltage Rectifiers Television Applications. Glass Passivated and Encapsulated Bote, QV to 15 KV. Diode, 13 kV @ 2mA 7 Diode, 13 kV @ 3mA Diode, 22 kV @ 2.2mA ..... Diode, 30 kV @ 1.5mA .. Diode, 30 kV @ 600.8 Diode, 45 kV @ 2.2mA 2185 187 139 141 2143 145 147 133