SUD50N024-06P

New Product

Vishay Siliconix

N-Channel 22-V (D-S) 175_C MOSFET

FEATURES

PRODUCT SUMMARY
rDS(on) (W)

ID (A)d

0.006 @ VGS = 10 V

80

0.0095 @ VGS = 4.5 V

64

VDS (V)
24C

D TrenchFETr Power MOSFET

D 175_C Junction Temperature
D PWM Optimized for High Efficiency

APPLICATIONS

D Synchronous Buck DC/DC Conversion

- Desktop
- Server

TO-252

G
Drain Connected to Tab
G

Top View
Order Number:
SUD50N024-06P

S
N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

VDS(pulse)

24C

Drain-Source Voltage

VDS

22

Gate-Source Voltage

VGS

"20

Drain-Source Pulse Voltage

TC= 100_C

Pulsed Drain Current

Continuous Source Current (Diode Conduction)a
Avalanche Current, Single Pulse

L = 0.1 mH

Avalanche Energy, Single Pulse

ID

56d

IDM

100

IS

26

IAS

45

EAS

101

TC = 25_C

Operating Junction and Storage Temperature Range

mJ

6.8a

TA = 25_C
Maximum Power Dissipation

80d

TC = 25_C

Continuous Drain Currenta

Unit

PD

65

TJ, Tstg

_C

- 55 to 175

THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction
Junction-to-Ambient
to Ambienta
Maximum Junction-to-Case

Symbol
t v 10 sec
Steady State

RthJA
RthJC

Typical

Maximum

18

22

40

50

1.9

2.3

Unit

_C/W
C/W

Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation
d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72289
S-31398Rev. A, 30-Jun-03

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SUD50N024-06P
New Product

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Typa

Symbol

Test Condition

Min

Max

V(BR)DSS

VGS = 0 V, ID = 250 mA

22

VGS(th)

VDS = VGS, ID = 250 mA

0.8

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = 16 V, VGS = 0 V

VDS = 16 V, VGS = 0 V, TJ = 125_C

50

Unit

Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current

IDSS

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

0.006

gfs

0.0084

VGS = 4.5 V, ID = 20 A
Forward Transconductanceb

mA
A

0.0046

VGS = 10 V, ID = 20 A, TJ = 125_C

rDS(on)

nA

50

VGS = 10 V, ID = 20 A
Drain-Source
Drain
Source On
On-State
State Resistanceb

3.0

0.0073

VDS = 15 V, ID = 20 A

0.0095

15

Dynamica
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

415

Gate Resistance

RG

1.5

Total Gate Chargec

Qg

19

Gate-Source Chargec

Qgs

Gate-Drain Chargec

Qgd

Turn-On Delay Timec

td(on)

Rise Timec

2550
VGS = 0 V, VDS = 10 V, f = 1 MHz

W
30
nC

6.0

VDD = 10 V, RL = 0.2 W
ID ^ 50 A, VGEN = 10 V, RG = 2.5 W

td(off)

Fall Timec

pF
p

7.5

VDS = 10 V, VGS = 4.5 V, ID = 50 A

tr

Turn-Off Delay Timec

900

tf

11

20

10

15

24

35

15

ns

Source-Drain Diode Ratings and Characteristic (TC = 25_C)

Pulsed Current

ISM

Diode Forward Voltageb

VSD

IF = 50 A, VGS = 0 V

1.2

1.5

trr

IF = 50 A, di/dt = 100 A/ms

35

70

ns

Source-Drain Reverse Recovery Time

100

Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics

Transfer Characteristics
100

160
140
VGS = 10 thru 5 V

80
I D - Drain Current (A)

I D - Drain Current (A)

120
4V
100
80
60
3V

40

60

40
TC = 125_C
20
25_C

20
2V

- 55_C

0
0

VDS - Drain-to-Source Voltage (V)

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10

0
0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

VGS - Gate-to-Source Voltage (V)

Document Number: 72289
S-31398Rev. A, 30-Jun-03

SUD50N024-06P
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Transconductance

On-Resistance vs. Drain Current

100

0.010

80

r DS(on)- On-Resistance ( W )

g fs - Transconductance (S)

TC = - 55_C
25_C
125_C

60

40

20

0.008
VGS = 4.5 V
0.006

VGS = 6.3 V

0.004
VGS = 10 V
0.002

0.000
0

10

20

30

40

50

20

40

ID - Drain Current (A)

80

100

32

40

ID - Drain Current (A)

Capacitance

Gate Charge
10

3500

V GS - Gate-to-Source Voltage (V)

3000
Ciss
C - Capacitance (pF)

60

2500
2000
1500
Coss
1000
Crss
500

VDS = 10 V
ID = 50 A

0
0

12

16

20

VDS - Drain-to-Source Voltage (V)

16

24

Qg - Total Gate Charge (nC)

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

1.6

100

1.4
I S - Source Current (A)

r DS(on)- On-Resistance ( W )
(Normalized)

VGS = 10 V
ID = 30 A

1.2

1.0

TJ = 150_C

TJ = 25_C

10

0.8

0.6
- 50

1
- 25

25

50

75

100

125

TJ - Junction Temperature (_C)

Document Number: 72289

S-31398Rev. A, 30-Jun-03

150

175

0.3

0.6

0.9

1.2

1.5

VSD - Source-to-Drain Voltage (V)

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SUD50N024-06P
New Product

Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature

Safe Operating Area

1000

40

Limited
by rDS(on)
10, 100 ms

100
I D - Drain Current (A)

I D - Drain Current (A)

32

24

16

1 ms

10

10 ms

TA = 25_C
Single Pulse

0.1

100 ms
1s
10 s
100 s
dc

0.01
0

25

50

75

100

125

150

175

0.1

10

100

VDS - Drain-to-Source Voltage (V)

TA - Ambient Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2
0.1
0.1

0.02
0.05

Single Pulse
0.01

10 -4

10 -3

10 -2

10 -1

10

100

1000

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Case

Normalized Effective Transient

Thermal Impedance

2
1

Duty Cycle = 0.5

0.2
0.1
0.1
0.02
0.05
Single Pulse

0.01

10 -4

10 -3

10 -2

10 -1

10

100

Square Wave Pulse Duration (sec)

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Document Number: 72289

S-31398Rev. A, 30-Jun-03