6MBI150UB-120

IGBT Module U-Series

Features

1200V / 150A 6 in one-package

Applications

High speed switching

Voltage drive
Low inductance module structure

Uninterruptible power supply

Inverter for Motor drive
AC and DC Servo drive amplifier Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item
Collector-Emitter voltage

Symbol
VCES

Gate-Emitter voltaga
Collector current

VGES
IC
ICp

Collector Power Dissipation

Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
between thermistor and others *2
Screw Torque
Mounting *3

-IC
-IC pulse
PC
Tj
Tstg
Viso

Conditions

Continuous Tc=25C
Tc=80C
1ms
Tc=25C
Tc=80C

1 device

AC:1min.

Unit
V
V
A

Rating
1200
20
200
150
400
300
150
300
735
+150
-40 to +125
2500

W
C
VAC
Nm

3.5

*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 Nm(M5)

Electrical characteristics (at Tj=25C unless otherwise specified)

Item

Symbols

Inverter

Zero gate voltage collector current

Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage

Input capacitance
Turn-on time

Turn-off time

Thermistor

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip*4
Resistance

ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
t rr
R lead
R

B value
B
*4:Biggest internal terminal resistance among arm.

Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=20V
VCE=20V, IC=150mA
VGE=15V, IC=150A Tj=25C
Tj=125C
Tj=25C
Tj=125C
VCE=10V, VGE=0V, f=1MHz
VCC =600V
IC=150A
VGE=15V
RG=2.2
VGE=0V
IF=150A

IF=150A
T=25C
T=100C
T=25/50C

Tj=25C
Tj=125C
Tj=25C
Tj=125C

Characteristics
Min.
Typ.

4.5
6.5

2.25

2.50

1.75

2.00

17

0.36

0.21

0.03

0.37

0.07

2.10

2.20

1.60

1.70

3.4

5000
465
495
3305
3375

Unit
Max.
1.0
200
8.5
2.60

2.10

1.20
0.60

1.00
0.30
2.40

1.90

0.35

520
3450

mA
nA
V
V

nF
s

s
m

Thermal resistance characteristics

Items
Thermal resistance
Contact Thermal resistance

Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*5

Conditions
IGBT
FWD
With thermal compound

Characteristics
Min.
Typ.

0.05

*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.

Unit
Max.
0.17
0.28

C/W
C/W
C/W

IGBT Module

6MBI150UB-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25C / chip

Tj= 125C / chip

400

400

15V

VGE=20V

12V

VGE=20V
Collector current : Ic [A]

Collector current : Ic [A]

15V

12V

300

300

200
10V

100

200
10V

100
8V

8V
0

0
0

Collector-Emitter voltage : VCE [V]

Collector current vs. Collector-Emitter voltage (typ.)

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

VGE=15V / chip

Tj=25C / chip

400

T j=25C

Collector - Emitter voltage : VCE [ V ]

10

300
Collector current : Ic [A]

Collector-Emitter voltage : VCE [V]

T j=125C

200

100

Ic=300A
Ic=150A
Ic= 75A

0
0

Collector-Emitter voltage : VCE [V]

10

15

20

25

Gate - Emitter voltage : VGE [ V ]

Capacitance vs. Collector-Emitter voltage (typ.)

Dynamic Gate charge (typ.)

VGE=0V, f= 1M Hz, Tj= 25C

Vcc=600V, Ic=150A, Tj= 25C

Collector-Emitter voltage : VCE [ 200V/div ]

Gate - Emitter voltage : VGE
[ 5V/div ]

Capacitance : Cies, Coes, Cres [ nF ]

100.0

Cies
10.0

Cres
1.0
Coes

VGE

VCE

0.1
0

10

20

Collector-Emitter voltage : VCE [V]

30

200

400

Gate charge : Qg [ nC ]

600

800

IGBT Module

6MBI150UB-120
Switching time vs. Collector current (typ.)

Switching time vs. Collector current (typ.)

Vcc=600V, VGE=15V, Rg=2.2, Tj= 25C

Vcc=600V, VGE=15V, Rg=2.2, Tj=125C

10000

Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

10000

1000
ton
toff
tr
100
tf

1000
toff
ton
tr
100

tf

10

10
0

50

100

150

200

250

300

Collector current : Ic [ A ]

150

200

250

Switching time vs. Gate resistance (typ.)

Switching loss vs. Collector current (typ.)

Vcc=600V, Ic=150A, VGE=15V, Tj= 25C

Vcc=600V, VGE=15V, Rg=2.2

30
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Switching time : ton, tr, toff, tf [ nsec ]

100

300

Collector current : Ic [ A ]

10000

ton
toff
1000

tr
100
tf

Eoff(125C)
Eon(125C)

25

20
Eoff(25C)
Eon(25C)

15
10

Err(125C)
5

10

Err(25C)

0
0.1

1.0

10.0

100.0

1000.0

Gate resistance : Rg [ ]

100

200

300

Collector current : Ic [ A ]

Reverse bias safe operating area (max.)

Switching loss vs. Gate resistance (typ.)

Vcc=600V, Ic=150A, VGE=15V, Tj= 125C

+VGE=15V,-VGE <= 15V, RG >= 2.2 ,Tj <= 125C

400

125
Eon
100
Collector current : Ic [ A ]

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

50

75

50

Eoff

25

Err

0
0.1

1.0

10.0

Gate resistance : Rg [ ]

100.0

1000.0

300

200

100

0
0

400

800

1200

Collector - Emitter voltage : VCE [ V ]

6MBI150UB-120

IGBT Module

Forward current vs. Forward on voltage (typ.)

Reverse recovery characteristics (typ.)

chip

Vcc=600V, VGE=15V, Rg=2.2

1000

400

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

Forward current : IF [ A ]

350
T j=25C

300
250

T j=125C

200
150
100

trr (125C)
Irr (125C)
Irr (25C)
trr (25C)

100

50
10

0
0

Forward on voltage : VF [ V ]

200

300

Temperature characteristic (typ.)

Transient thermal resistance (max.)

1.000

100

FWD
IGBT

Resistance : R [ k ]

Thermal resistanse : Rth(j-c) [ C/W ]

100

Forward current : IF [ A ]

0.100

0.010

0.001
0.001

0.010

0.100

Pulse width : Pw [ sec ]

1.000

10

0.1
-60 -40 -20

20 40 60 80 100 120 140 160 180

Temperature [C ]

IGBT Module

6MBI150UB-120
Outline Drawings, mm
M633

) shows reference dimension.

Equivalent Circuit Schematic

16,17,18

30,31,32

1
2

5
6
U
27,28,29

3
4
33,34,35

9
10
V
24,25,26

7
8

W
21,22,23

11
12
13,14,15

19

20