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SPP11N80C3

SPA11N80C3
Cool MOS Power Transistor
Feature
New revolutionary high voltage technology

VDS

800

RDS(on)

0.45

ID

11

Ultra low gate charge


Periodic avalanche rated

PG-TO220-3-31 PG-TO220

Extreme dv/dt rated


Ultra low effective capacitances

Improved transconductance

P-TO220-3-31

PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type

Package

Ordering Code

Marking

SPP11N80C3

PG-TO220

Q67040-S4438

11N80C3

SPA11N80C3

PG-TO220-3-31 SP000216320

11N80C3

Maximum Ratings
Symbol

Parameter

Value
SPP

Continuous drain current

Unit
SPA

ID

TC = 25 C

11

111)

TC = 100 C

7.1

7.11)

33

33

Pulsed drain current, tp limited by Tjmax

ID puls

Avalanche energy, single pulse

EAS

470

470

EAR

0.2

0.2

Avalanche current, repetitive tAR limited by Tjmax

IAR

11

11

Gate source voltage

VGS

20

20

Gate source voltage AC (f >1Hz)

VGS

30

30

Power dissipation, TC = 25C

Ptot

156

41

Operating and storage temperature

Tj , Tstg

mJ

ID=2.2A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2)


ID=11A, VDD=50V

Rev. 2.4

Page 1

-55...+150

W
C

2005-08-24
Free Datasheet http://www.datasheet4u.net/

SPP11N80C3
SPA11N80C3
Maximum Ratings
Parameter

Symbol

Drain Source voltage slope

dv/dt

Value

Unit

50

V/ns

Values

Unit

VDS = 640 V, ID = 11 A, Tj = 125 C

Thermal Characteristics
Symbol

Parameter

min.

typ.

max.

Thermal resistance, junction - case

RthJC

0.8

Thermal resistance, junction - case, FullPAK

RthJC_FP

3.7

Thermal resistance, junction - ambient, leaded

RthJA

62

Thermal resistance, junction - ambient, FullPAK

RthJA_FP

80

Soldering temperature, wavesoldering

Tsold

260

K/W

1.6 mm (0.063 in.) from case for 10s 3)


Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter

Symbol

Conditions

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA


Drain-Source avalanche

V(BR)DS VGS=0V, ID=11A

Values

Unit

min.

typ.

max.

800

870

2.1

3.9

breakdown voltage
Gate threshold voltage

VGS(th)

ID=680A, VGS =VDS

Zero gate voltage drain current

I DSS

VDS=800V, V GS=0V,

Gate-source leakage current

I GSS

Drain-source on-state resistance RDS(on)

Gate input resistance

Rev. 2.4

RG

Tj=25C

0.5

20

Tj=150C

200

VGS=20V, V DS=0V

100

VGS=10V, ID=7.1A
Tj=25C

0.39

0.45

Tj=150C

1.1

f=1MHz, open drain

0.7

Page 2

nA

2005-08-24
Free Datasheet http://www.datasheet4u.net/

SPP11N80C3
SPA11N80C3
Electrical Characteristics
Parameter
Transconductance

Symbol
gfs

Conditions
VDS2*ID*R DS(on)max,

Values

Unit

min.

typ.

max.

7.5

S
pF

ID=7.1A

Input capacitance

Ciss

VGS=0V, VDS=25V,

1600

Output capacitance

Coss

f=1MHz

800

Reverse transfer capacitance

Crss

40

44.3

33.9

Effective output capacitance,4) Co(er)

VGS=0V,

energy related

VDS=0V to 480V

Effective output capacitance,5) Co(tr)


time related
Turn-on delay time

td(on)

VDD=400V, VGS=0/10V,

25

Rise time

tr

ID=11A,

15

Turn-off delay time

td(off)

RG =7.5

72

82

Fall time

tf

10

25

50

60

ns

Gate Charge Characteristics


Gate to source charge

Qgs

Gate to drain charge

Qgd

Gate charge total

Qg

VDD=640V, ID=11A

VDD=640V, ID=11A,

nC

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=640V, ID=11A

1Limited only by maximum temperature


2Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AR
AV
3Soldering temperature for TO-263: 220C, reflow
4C

o(er)

is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

5C

o(tr)

is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Rev. 2.4

Page 3

2005-08-24
Free Datasheet http://www.datasheet4u.net/

SPP11N80C3
SPA11N80C3
Electrical Characteristics
Parameter

Symbol

Inverse diode continuous

IS

Conditions

Values

Unit

min.

typ.

max.

11

33

TC=25C

forward current
Inverse diode direct current,

I SM

pulsed
Inverse diode forward voltage

VSD

VGS =0V, IF=IS

1.2

Reverse recovery time

t rr

VR =640V, IF =IS ,

550

ns

Reverse recovery charge

Q rr

diF/dt=100A/s

10

Peak reverse recovery current

I rrm

33

Peak rate of fall of reverse

dirr /dt

1000

A/s

Tj=25C

recovery current
Typical Transient Thermal Characteristics
Value

Symbol

Unit

SPP

SPA

Rth1

0.012

0.012

Rth2

0.023

Rth3

Symbol

Value

Unit

SPP

SPA

Cth1

0.0002493

0.0002493

0.023

Cth2

0.0009399

0.0009399

0.043

0.043

Cth3

0.001298

0.001298

Rth4

0.154

0.176

Cth4

0.003617

0.003617

Rth5

0.175

0.371

Cth5

0.009186

0.00802

Rth6

0.071

2.522

Cth6

0.074

0.412

Tj

K/W

R th1

R th,n

T case

Ws/K

E xternal H eatsink

P tot (t)
C th1

C th2

C th,n
T am b

Rev. 2.4

Page 4

2005-08-24
Free Datasheet http://www.datasheet4u.net/

SPP11N80C3
SPA11N80C3
1 Power dissipation

2 Power dissipation FullPAK

Ptot = f (TC)

Ptot = f (TC)

170

SPP11N80C3

45

140
35

Ptot

Ptot

120
100

30
25

80

20

60

15

40

10

20

0
0

20

40

60

80

100

120

0
0

160

20

40

60

80

100

120

TC

3 Safe operating area

4 Safe operating area FullPAK

ID = f ( VDS )

ID = f (VDS)

parameter : D = 0 , TC=25C

parameter: D = 0, TC = 25C

10

C 160
TC

10 2

10 1

10 1

ID

ID

10 0

10 -1

10 -2 0
10

Rev. 2.4

10 0

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC

10

10 -1

10

10

V
VDS

Page 5

10 -2 0
10

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC

10

10

10
V
VDS

2005-08-24
Free Datasheet http://www.datasheet4u.net/

SPP11N80C3
SPA11N80C3
5 Transient thermal impedance

6 Transient thermal impedance FullPAK

ZthJC = f (tp)

ZthJC = f (tp)

parameter: D = tp/T

parameter: D = tp/t

10 1

10 2

K/W

K/W

10 1

ZthJC

ZthJC

10 0

10 -1

10 0

10 -1
10

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

-2

10 -3

10 -4 -7
10

10

-6

10

-5

10

-4

10

-3

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

10 -2

10 -3

s
tp

10

10 -4 -7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10

-1

1
s 10

tp

7 Typ. output characteristic

8 Typ. output characteristic

ID = f (VDS); Tj =25C

ID = f (VDS); Tj =150C

parameter: tp = 10 s, VGS

parameter: tp = 10 s, VGS

35

18

20V
8V
7V

20V
6.5V
6V

14

ID

ID

25

20

6.5V

15

6V

12
5.5V

10
8

5V

6
10

5.5V

5V

4.5V

4V

4V

0
0

Rev. 2.4

12

16

20

0
0

26
V
VDS

Page 6

12

16

20

26
V
VDS

2005-08-24
Free Datasheet http://www.datasheet4u.net/

SPP11N80C3
SPA11N80C3
9 Typ. drain-source on resistance

10 Drain-source on-state resistance

RDS(on)=f(ID)

RDS(on) = f (Tj)

parameter: Tj=150C, VGS

parameter : ID = 7.1 A, VGS = 10 V


2.6

4V

2.6

2.2
4.5V

2
5V

2.4

RDS(on)

RDS(on)

SPP11N80C3

2.2
5.5V

1.8
1.6
1.4
1.2

1.8

6V

1.6

0.8

6.5V

1.4

98%

0.6
20V

1.2
1
0.8
0

typ

0.4
0.2

10

12

14

A
ID

0
-60

18

-20

20

60

12 Typ. gate charge

ID = f ( VGS ); VDS 2 x ID x RDS(on)max

VGS = f (Q Gate)
parameter: ID = 11 A pulsed

35

16

25C

180

Tj

11 Typ. transfer characteristics


parameter: tp = 10 s

100

SPP11N80C3

12

ID

VGS

25

0,2 VDS max

0,8 VDS max

10

20
8

150C

15

6
10

0
0

Rev. 2.4

10

12

14

16

0
0

V 20
VGS

20

40

60

80

nC

110

QGate
Page 7

2005-08-24
Free Datasheet http://www.datasheet4u.net/

SPP11N80C3
SPA11N80C3
13 Forward characteristics of body diode

14 Avalanche SOA

IF = f (VSD)

IAR = f (tAR)

parameter: Tj , tp = 10 s

par.: Tj 150 C

10 2

SPP11N80C3

11

A
A
9
8

IF

IAR

10 1

7
6
5
Tj(START)=25C

10 0
Tj = 25 C typ

Tj = 150 C typ

10 -1
0

0.4

0.8

Tj = 25 C (98%)

Tj = 150 C (98%)

1.2

1.6

2.4 V

Tj(START)=125C

0 -3
10

10

-2

10

-1

10

10

10

s 10
tAR

VSD

15 Avalanche energy

16 Drain-source breakdown voltage

EAS = f (Tj)

V(BR)DSS = f (Tj)

par.: ID = 2.2 A, VDD = 50 V


500

980

SPP11N80C3

mJ

940

V(BR)DSS

E AS

400
350
300

920
900
880
860

250

840
200

820

150

800
780

100

760
50
0
20

Rev. 2.4

740
40

60

80

100

120

720
-60

C 150
Tj

-20

20

60

100

180

Tj
Page 8

2005-08-24
Free Datasheet http://www.datasheet4u.net/

SPP11N80C3
SPA11N80C3
17 Avalanche power losses

18 Typ. capacitances

PAR = f (f )

C = f (VDS)

parameter: EAR =0.2mJ

parameter: VGS =0V, f=1 MHz


10 4

200

pF

Ciss
W

PAR

10 3

100

10 2

50

10 1

0 4
10

10

10

Hz

10 0
0

Coss

Crss

100

200

300

400

500

600

800
V
VDS

19 Typ. Coss stored energy


Eoss=f(VDS)
12

E oss

0
0

Rev. 2.4

100

200

300

400

500

600

800
V
VDS

Page 9

2005-08-24
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SPP11N80C3
SPA11N80C3

Definition of diodes switching characteristics

Rev. 2.4

Page 10

2005-08-24
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SPP11N80C3
SPA11N80C3
PG-TO220-3-1, PG-TO220-3-21

Rev. 2.4

Page 11

2005-08-24
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SPP11N80C3
SPA11N80C3
PG-TO220-3-31 (FullPAK)

Rev. 2.4

Page 12

2005-08-24
Free Datasheet http://www.datasheet4u.net/

SPP11N80C3
SPA11N80C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Rev. 2.4

Page 13

2005-08-24
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