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Vishay Semiconductors
PRODUCT SUMMARY
IF(AV)
35 A, 40 A, 60 A
Package
DO-203AB (DO-5)
Circuit configuration
Single diode
TEST CONDITIONS
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
1N1183
35 (1)
140 (1)
480
500 (1)
1140
1040
16 100
50 to 600 (1)
1N3765
35 (1)
140 (1)
380
400 (1)
730
670
10 300
700 to 1000 (1)
1N1183A
40 (1)
150 (1)
765
800 (1)
2900
2650
41 000
50 to 600 (1)
1N2128A
60 (1)
140 (1)
860
900 (1)
3700
3400
52 500
50 to 600 (1)
UNITS
A
C
A
A2s
A2s
V
-65 to 200
TJ
Note
(1) JEDEC registered values
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
1N1183
1N1184
1N1185
1N1186
1N1187
1N1188
1N1189
1N1190
1N3765
1N3766
1N3767
1N3768
1N1183A
1N1184A
1N1185A
1N1186A
1N1187A
1N1188A
1N1189A
1N1190A
1N2128A
1N2129A
1N2130A
1N2131A
1N2133A
1N2135A
1N2137A
1N2138A
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
Notes
Basic type number indicates cathode to case. For anode to case, add R to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA
(2) JEDEC registered values
(3) For 1N1183 Series and 1N3765 Series T = - 65 C to 190 C
C
Revision: 15-Jan-14
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
1-phase operation,
180 sinusoidal conduction
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
IFSM
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
t = 10 ms
Maximum
for individual
device fusing
Maximum peak forward voltage
at maximum forward current (IFM)
Maximum average
reverse current
t = 8.3 ms
I2t (2)
VFM
Following any
rated load
condition and
with rated
VRRM applied
1N1183
35 (1)
35 (1)
40 (1)
60 (1)
140 (1)
140 (1)
150 (1)
140 (1)
480
380
765
860
500 (1)
400 (1)
800 (1)
900 (1)
A
Following any
rated load
condition and
with VRRM
applied following
surge = 0
With rated VRRM
applied following
surge, initial
TJ = TJ maximum
With VRRM = 0
following surge,
initial
TJ = TJ maximum
t = 0.1 to 10 ms,
VRRM = 0 following surge
TJ = 25 C
570
455
910
1000
595
475
950
1050
1140
730
2900
3700
1040
670
2650
3400
A2s
1610
1030
4150
5250
1470
940
3750
4750
16 100
10 300
41 500
52 500
A2s
1.7 (1)
1.8 (1)
1.3 (1)
1.3 (1)
110
110
126
188
(1)
VRRM = 700
5.0
VRRM = 800
4.0 (1)
3.0 (1)
2.0 (1)
10 (1)
2.5 (1)
10 (1)
VRRM = 900
IR(AV)
VRRM = 1000
Maximum rated IF(AV), VRRM and TC
mA
Notes
(4) JEDEC registered values
(5) I2t for time t = I2t x t
x
x
Revision: 15-Jan-14
Vishay Semiconductors
SYMBOL
Maximum operating
case temperature range
TEST CONDITIONS
TC
- 65 to 190 (1)
- 65 to 200
Maximum storage
temperature range
TStg
- 65 to 175 (1)
- 65 to 200
RthJC
DC operation
Thermal resistance,
case to sink
RthCS
1.00 (1)
1.1 (1)
0.65 (1)
C/W
0.25
3.4 (30)
(2)
2.3 (20)
4.2 (37)
3.2 (28)
Approximate weight
JEDEC
Case style
Nm
(lbf in)
17
0.6
oz.
DO-203AB (DO-5)
70
190
180
170
Conduction Period
160
150
DC
140
+60 C +120 C
+180 C
130
120
110
Notes
(6) JEDEC registered values
(7) Recommended for pass-through holes
(8) Recommended for holed threaded heatsinks
+60 C +120 C
TJ = 190 C
60
50
+180 C
40
DC
30
20
10
Conduction Period
0
100
0
10
20
30
40
50
60
10
20
30
40
50
Revision: 15-Jan-14
105
TJ = 140 C
90
DC
+180 C
+120 C
+60 C
104
10
Vishay Semiconductors
102
Conduction Period
102
10
103
+180 C
Wave
+120 C
&
60
50
+180 C
Wave
Wave
40
30
+60 C
20
&
Wave
+Conduction Period
100
103
TJ = 190 C
Typical
102
101
TJ = 25 C
+180 C
Wave
+180 C
Wave
90
80
+120 C
70
+60 C
&
&
DC
Wave
Wave
60
50
40
TJ = 200 C
30
20
+Conduction Period
10
0
1
0
10
20
30
40
50
60
70
1.0
104
0.9
0.8
0.7
0.6
50 Hz
60 Hz
0.5
0.4
0.3
1
6 8 10
20
40 60
Revision: 15-Jan-14
DC
0
110 120 130 140 150 160 170 180 190 200
104
70
10
10
80
103
+180 C
Wave
+180 C
Wave
+120 C
&
+60 C
&
DC
Wave
Wave
102
TJ = 200 C
+Conduction Period
101
10
102
103
104
103
102
TJ = 25 C
10
TJ = 200 C
10-1
0
0.5
1.5
2.5
3.5
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180
Wave
Wave
Wave
Wave
160
140
DC
120
100
+Conduction Period
80
60
0
10
20
30
40
50
60
70
80
90 100
70
0.9
0.8
0.7
0.6
60 Hz
0.5
50 Hz
0.4
+60 C
&
+120 C
&
+180 C
+180 C
1.0
0.3
60
50
40
30
TJ = 140 C
+60 C
&
+120 C
&
+180 C
+180 C
Wave
Wave
Wave
Wave
+Conduction Period
20
DC
10
0
6 8 10
20
40 60
0.9
0.8
0.7
0.6
60 Hz
0.5
0.4
50 Hz
0.3
20
103
+60 C
&
+90 C
&
+180 C
+180 C
6 8 10
20
40 60
Revision: 15-Jan-14
40
50
105
Wave
Wave
Wave
Wave
TJ = 140 C
102
+Conduction
Period
104
DC
DC
+180 C
+180 C
+120 C
&
+60 C
&
10
1
30
10
1.0
200
10
102
103
Wave
Wave
Wave
Wave
104
103
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Vishay Semiconductors
104
103
102
TJ = 140 C
101
TTJJ == 25 C
C
1.0
0
Revision: 15-Jan-14
www.vishay.com/doc?95360
Outline Dimensions
Vishay Semiconductors
6.1 (0.24)
7.0 (0.28)
4.10 (0.16)
3.80 (0.15)
1.03 (0.04)
MAX.
4 (0.16) MIN.
25.4 (1.0) MAX.
10.8 (0.43)
11.4 (0.45)
10.7 (0.42)
11.5 (0.45)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.0 (0.04)
MAX.
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1
Vishay
Disclaimer
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about the suitability of products for a particular application. It is the customers responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 02-Oct-12