CH 01

Introduction to Semiconductor
Manufacturing Technology
Chapter 1, Introduction
Hong Xiao, Ph. D.
hxiao89@hotmail.com
Hong Xiao, Ph. D.
www2.austin.cc.tx.us/HongXiao/Boo
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Objective
After taking this course, you will able to
Use common semiconductor terminology

Describe a basic IC fabrication sequence
Briefly explain each process step
Relate your job or products to semiconductor
manufacturing process
Hong Xiao, Ph. D.
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Topics
Introduction
IC Device and Design
Semiconductor Manufacturing Processes
Future Trends
Hong Xiao, Ph. D.
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Introduction
First Transistor, AT&T Bell Labs, 1947

First Single Crystal Germanium, 1952
First Single Crystal Silicon, 1954
First IC device, TI, 1958
First IC product, Fairchild Camera, 1961
Hong Xiao, Ph. D.
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First Transistor, Bell Lab, 1947
Photo courtesy:
AT&T Archive
Hong Xiao, Ph. D.
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First Transistor and Its Inventors
John Bardeen, William Shockley and Walter Brattain

Photo courtesy: Lucent Technologies Inc.
Hong Xiao, Ph. D.
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First IC Device Made by Jack Kilby

of Texas Instrument in 1958
Photo courtesy: Texas Instruments

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First Silicon IC Chip Made by Robert

Noyce of Fairchild Camera in 1961
Photo courtesy: Fairchild Semiconductor International

Hong Xiao, Ph. D.
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Moores Law
Intel co-founder Gorden Moore notice in 1964
Number of transistors doubled every 12 months
while price unchanged
Slowed down in the 1980s to every 18 months
Amazingly still correct, likely to keep until
2010.
Hong Xiao, Ph. D.
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Moores Law, Intels Version

Transistors
Pentium III
10M
80486
1M
80386
100K
10K
Pentium
8086
4040
80286
8080
1K
1975
Hong Xiao, Ph. D.
1980
1985
1990
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1995
2000
10
IC Scales
Integration level
Abbreviation
Number of devices on a chip
Small Scale Integration
SSI
2 to 50
Medium Scale Integration
MSI
50 to 5,000
Large Scale Integration
LSI
5,000 to 100,000
Very Large Scale Integration
VLSI
100,000 to 10,000,000
Ultra Large Scale Integration
ULSI
10,000,000 to 1,000,000,000
Super Large Scale Integration
SLSI
over 1,000,000,000
Hong Xiao, Ph. D.
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Road Map Semiconductor Industry

Minimum feature size (m)
DRAM
Bits/chip
Cost/bits @ volume
(millicents)
Microprocessor
Transistors/cm2
Cost/Transistor @ volume
(millicents)
ASIC
Transistors/cm2
Cost/Transistor @ volume
(millicents)
Wafer size (mm)
Hong Xiao, Ph. D.
1995
1997
1999
2001
2004
2007
0.35
0.25
0.18
0.13
0.10
0.07
64 M
256 M
1G
4G
16 G
64 G
0.017
0.007
0.003
0.001
0.0005
0.0002
4M
7M
13 M
25 M
50 M
90 M
0.5
0.2
0.1
0.05
0.02
2M
4M
7M
13 M
25 M
40 M
0.3
200
0.1
200
0.05
200 300
0.03
300
0.02
300
0.01
300
400 (?)
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Feature Size and Wafer Size

Chip made with 0.35 m
technology
Chip
or die
with 0.25 m
technology
200 mm
with 0.18 m
technology
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300 mm
150 mm
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Smallest Known Transistor Made

by NEC in 1997
Upper gate
Lower gate
Dielectric
Drain
Source
n+
n+
Ultra shallow junctions
P-type substrate
0.014 micron lower gate width

Hong Xiao, Ph. D.
Photo courtesy: NEC Corporation
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Limit of the IC Geometry

Size of the atom
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Limit of the IC device

Atom size: several
Need some atoms to form a device
Likely the final limit is around 100 or
0.01 micron.
About 30 silicon atoms
Hong Xiao, Ph. D.
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IC Design: First IC
Photo courtesy: Texas Instruments

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Vin
IC Design:
CMOS Inverter
(a)
Vdd
NMOS
PMOS
Vss
Vout
Shallow trench isolation (STI)

P-channel active region
P-channel Vt
P-channel LDD
P-channel S/D
N-channel active region

N-channel Vt
N-channel LDD
N-channel S/D
(b)
P-well
N-well
Polycide gate and local

interconnection
Metal 1
Contact
Metal 1, AlCu
W
PMD
n+
n+
STI
P-Well
p+
p+
N-Well
P-Epi
(c)
P-Wafer
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IC Design: Layout and Masks of CMOS Inverter
CMOS inverter layout
Mask 3, shallow trench isolation
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Mask 6, gate/local interconnection
Mask 1, N-well
Mask 4, 7, 9, N-Vt, LDD, S/D
Mask k.htm
11, contact
Mask 2, P-well
Mask 5, 8, 10, P-Vt, LDD, S/D
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Mask 12, metal 1
Mask/Reticle
Pellicle
Chrome pattern
Phase shift coating
Quartz substrate
Hong Xiao, Ph. D.
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A Mask
and
a Reticle
Photo courtesy: SGS Thompson

Hong Xiao, Ph. D.
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Wafer Process Flow

Materials
IC Fab
Metallization
CMP
Dielectric
deposition
Test
Wafers
Thermal
Processes
Implant
PR strip
Etch
PR strip
Packaging
Masks
Photolithography
Final Test
Design
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Introduction to Semiconductor

Use common semiconductor terminology

Hong Xiao, Ph. D.

Hong Xiao, Ph. D.

First Transistor, AT&T Bell Labs, 1947

Hong Xiao, Ph. D.

First Transistor, Bell Lab, 1947

Hong Xiao, Ph. D.

First Transistor and Its Inventors

John Bardeen, William Shockley and Walter Brattain

First IC Device Made by Jack Kilby

Photo courtesy: Texas Instruments

First Silicon IC Chip Made by Robert

Photo courtesy: Fairchild Semiconductor International

Hong Xiao, Ph. D.

Moores Law, Intels Version

Number of devices on a chip

Small Scale Integration

Medium Scale Integration

Large Scale Integration

Very Large Scale Integration

Ultra Large Scale Integration

Super Large Scale Integration

Hong Xiao, Ph. D.

Road Map Semiconductor Industry

Feature Size and Wafer Size

Hong Xiao, Ph. D.

Smallest Known Transistor Made

0.014 micron lower gate width

Photo courtesy: NEC Corporation

Limit of the IC Geometry

Hong Xiao, Ph. D.

Limit of the IC device

Hong Xiao, Ph. D.

Photo courtesy: Texas Instruments

Shallow trench isolation (STI)

N-channel active region

Polycide gate and local

Hong Xiao, Ph. D.

IC Design: Layout and Masks of CMOS Inverter

CMOS inverter layout

Mask 3, shallow trench isolation

Hong Xiao, Ph. D.

Mask 6, gate/local interconnection

Mask 4, 7, 9, N-Vt, LDD, S/D

Mask 5, 8, 10, P-Vt, LDD, S/D

Mask 12, metal 1

Phase shift coating

Hong Xiao, Ph. D.

Photo courtesy: SGS Thompson

Wafer Process Flow

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